APPARATUS AND METHOD FOR EXAMINING A SURFACE OF A MASK

The present invention relates to apparatuses and methods for examining a surface of a test object, such as e.g. a lithography mask. In accordance with one aspect of the invention, an apparatus for examining a surface of a mask comprises a probe which interacts with the surface of the mask, and a measuring apparatus for establishing a reference distance of the mask from a reference point, wherein the measuring apparatus measures the reference distance of the mask in a measurement region of the mask which is not arranged on the surface of the mask.

DEVICE AND METHOD FOR ANALYSING A DEFECT OF A PHOTOLITHOGRAPHIC MASK OR OF A WAFER

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope. 1. A scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer , said scanning probe microscope comprising:a. at least one first probe embodied to analyze the at least one defect;b. means for producing at least one mark, by means of which the position of the at least one defect on the mask or on the wafer is indicated; andc. wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.2. The scanning probe microscope according to claim 1 , wherein the at least one first probe is embodied to analyze a defect which cannot be detected claim 1 , or cannot be detected reliably claim 1 , by the scanning particle beam microscope.3. The scanning probe microscope according to claim 1 , further comprising a control unit embodied to apply the at least one mark to the photolithographic mask or to the wafer in such a way that both the at least one mark and at least part of the at least one defect are arranged in a single scanning region of the scanning probe microscope.4. The scanning probe microscope according to claim 3 , wherein analyzing the at least one defect comprises: determining topography data of the at least one defect and position data of the at least one mark by use of the control unit.5. The scanning probe microscope according to claim 3 , wherein the control unit is further embodied to determine a repair ...

METHOD AND DEVICE FOR PERMANENTLY REPAIRING DEFECTS OF ABSENT MATERIAL OF A PHOTOLITHOGRAPHIC MASK

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material. 1. A method for repairing defects of absent material of a photolithographic mask , wherein the method comprises the following steps:a. providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask;b. initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; andc. controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material, wherein the deposited material comprises a carbon proportion of <20 atom %.2. The method according to claim 1 , wherein the deposited material comprises a carbon proportion of <15 atom %.3. The method according to claim 1 , wherein the at least one carbon-containing precursor gas comprises at least one metal carbonyl and/or at least one main group element alkoxide.4. The method according to claim 3 , ...

Method and apparatus for processing a substrate with a focused particle beam

The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

Apparatus and method for examining a surface of a mask

The present invention relates to apparatuses and methods for examining a surface of a test object, such as e.g. a lithography mask. In accordance with one aspect of the invention, an apparatus for examining a surface of a mask comprises a probe which interacts with the surface of the mask, and a measuring apparatus for establishing a reference distance of the mask from a reference point, wherein the measuring apparatus measures the reference distance of the mask in a measurement region of the mask which is not arranged on the surface of the mask.

METHOD AND APPARATUS FOR ANALYZING AND/OR REPAIRING OF AN EUV MASK DEFECT

The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures. 1. A method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) , the method comprising:a. generating at least one focus stack relating to the defect using an EUV mask inspection tool;b. determining a surface configuration of the EUV mask at a position of the defect;c. providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks; andd. determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.2. The method of claim 1 , further comprising applying different repairing methods to the three dimensional error structure and simulating respective focus stacks in order to determine an optimal repairing method.3. The method of claim 2 , further comprising applying the optimal repairing method to the defective position.4. The method of claim 1 , wherein the model structures comprise an absorbing pattern structure on a surface of the EUV mask.5. The method of claim 4 , further comprising providing the absorbing pattern structure from EUV mask design data and/or from a recording of at least one image.6. The ...

APPARATUS AND METHOD FOR ANALYZING AND MODIFYING A SPECIMEN SURFACE

The invention refers to a probe assembly for a scanning probe microscope which comprises at least one first probe-adapted for analyzing a specimen, at least one second probe adapted for modifying the specimen and at least one motion element associated with the probe assembly and adapted for scanning one of the probes being in a working position across a surface of the specimen so that the at least one first probe interacts with the specimen whereas the at least one second probe is in a neutral position in which it does not interact with the specimen and to bring the at least one second probe into a position so that the at least one second probe can modify a region of the specimen analyzed with the at least one first probe. 114.-. (canceled)15. A probe assembly , comprising:a first probe, the first probe having a neutral position in which the first probe does not interact the specimen, and the first probe having a working position in which the first probe is configured to analyze the specimen;a second probe, the second probe having a neutral position in which the second probe does not interact with the specimen, and the second probe having a working position in which the second probe is configured to modify the specimen; anda motion element configured to scan the first probe across a surface of the specimen when the first probe is in its working position and the second probe is in its neutral position, the motion element also being configured to bring the second probe into its working position so that a region of the specimen analyzed with the first probe is modifiable with the second probe,wherein the probe assembly is a scanning probe microscope probe assembly.16. The probe assembly of claim 15 , wherein the motion element comprises a piezo actuator.17. The probe assembly of claim 15 , wherein the motion element comprises a tubular piezo actuator.18. The probe assembly of claim 15 , wherein the motion element further comprises first and second control members claim ...

Apparatus and method for investigating an object

The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope and at least one scanning probe microscope with a probe, wherein the scanning particle microscope and the at least one scanning probe microscope are spaced with respect to each other in a common vacuum chamber so that a distance between the optical axis of the scanning particle microscope and the measuring point of the scanning probe microscope in the direction perpendicular to the optical axis of the scanning particle microscope is larger than the maximum field of view of both the scanning probe microscope and the scanning particle microscope, wherein the method comprises the step of determining the distance between the measuring point of the scanning probe microscope and the optical axis of the scanning particle microscope.

METHOD AND APPARATUS FOR ANALYZING AND FOR REMOVING A DEFECT OF AN EUV PHOTOMASK

The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data. 126.-. (canceled)27. A method of analyzing a defect of an optical element for the extreme ultra-violet wavelength range , the optical element comprising a substrate and a multi-layer structure , the method comprising:determining first data by exposing the defect to ultra-violet radiation;determining second data by scanning the defect with a scanning probe micro-scope;determining third data by scanning the defect with a scanning particle micro-scope; andcombining the first, the second and the third data.28. The method according to claim 27 , further comprising using the scanning particle microscope to at least partially compensate the defect.29. The method according to claim 27 , further comprising: a) generating a mark by locally depositing material on an at least one element selected from the group consisting of the multi-layer structure and an absorber structure of the optical element; and/or b) removing a mark by etching a local depression into an absorber structure of the optical element.30. The method according to claim 29 , further comprising using the scanning particle microscope to generate the mark.31. The method according to claim 29 , wherein combining the first claim 29 , the second and the third data comprises compensating deviations with respect to at least one member selected from the group consisting of the mark claim 29 , a scale of the first data claim 29 , a scale of the second data claim 29 , a scale of the third ...

METHOD AND APPARATUS FOR ANALYZING AND FOR REMOVING A DEFECT OF AN EUV PHOTOMASK

The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) combining the first, the second and the third data. 126.-. (canceled)27. A method for analyzing a defect of an optical element comprising a substrate and a multi-layer structure , the method comprising:determining first data of the defect of the optical element for an EUV wavelength range by exposing the defect of the optical element to ultra-violet radiation;determining second data of the defect of the optical element for the EUV wavelength range by scanning the defect of the optical element with a scanning probe microscope;determining third data of the defect of the optical element for the EUV wavelength range by scanning the defect of the optical element with a scanning particle microscope; andlinking the first and second data to the third data.28. The method of claim 27 , wherein linking the first and second data to the third data comprises mutually aligning the first claim 27 , second and third data relative to each other.29. The method of claim 27 , wherein linking the first and second data to the third data comprises superimposing a pixel of the first data claim 27 , a pixel of the second data and a pixel of the third data.30. The method of claim 29 , wherein linking the first and second data to the third data comprises transforming at least one member selected from the group consisting of the first data claim 29 , the second data and the third data so that each pixel of the first data is associated with a pixel of the second data and a pixel of the third data.31. The method of ...

METHOD AND APPARATUS FOR PROTECTING A SUBSTRATE DURING PROCESSING BY A PARTICLE BEAM

The invention refers to a method and apparatus for protecting a substrate during a processing by at least one particle beam. The method comprises the following steps: (a) applying a locally restrict limited protection layer on the substrate; (b) etching the substrate and/or a layer arranged on the substrate by use of the at least one particle beam and at least one gas; and/or (c) depositing material onto the substrate by use of the at least one particle beam and at least one precursor gas; and (d) removing the locally limited protection layer from the substrate.

DEVICE AND METHOD FOR ANALYSING A DEFECT OF A PHOTOLITHOGRAPHIC MASK OR OF A WAFER

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope. 1. A method for analyzing at least one defect of a photolithographic mask or of a wafer using a measuring system , the measuring system comprising at least one scanning probe microscope and at least one scanning particle beam microscope , the method comprising:a. analyzing the at least one defect using at least one probe of the at least one scanning probe microscope;b. producing at least one mark on the photolithographic mask or on the wafer using the at least one scanning probe microscope, wherein the at least one mark is embodied in a way that it can be detected by at least one particle beam of the at least one scanning particle beam microscope; andc. detecting the at least one mark using the at least one particle beam of the at least one scanning particle beam microscope.2. The method of wherein the at least one defect comprises a defect which cannot be detected claim 1 , or cannot be detected reliably claim 1 , by the scanning particle beam microscope.3. The method of wherein the at least one mark is produced so close to the at least one defect that at least part of the defect and the at least one mark are arranged in a single scanning region of the scanning probe microscope.4. The method of wherein analyzing the at least one defect comprises determining topography data of the at least one defect and position data of the at least one mark.5. The method of claim 1 , further comprising determining a repair template for the ...

Method and device for permanently repairing defects of absent material of a photolithographic mask

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.

Process for electron-beam-induced etching

Die Erfindung betrifft ein Verfahren zum elektronenstrahlinduzierten Ätzen eines Materials (100, 200) mit den Verfahrensschritten des Bereitstellens zumindest eines Ätzgases an einer Stelle des Materials (100, 200), an der ein Elektronenstrahl auf das Material (100, 200) trifft, und des gleichzeitigen Bereitstellens zumindest eines Passivierungsgases, das geeignet ist, spontanes Ätzen durch das zumindest eine Ätzgas zu verlangsamen oder zu unterbinden. The invention relates to a method for electron beam induced etching of a material (100, 200) comprising the steps of providing at least one etching gas at a location of the material (100, 200) where an electron beam strikes the material (100, 200) and simultaneously providing at least one passivation gas that is capable of slowing or stopping spontaneous etching by the at least one etching gas.

Method for electron beam induced etching

The invention relates to a method for electron beam induced etching of a material (100, 200). Said method consists of the following steps: at least one etching gas is provided on one area of the material (100, 200) on which an electron beam strikes said material (100, 200) and at least one passivation gas that is used to slow down or prevent spontaneous etching by the at least one etching gas is provided.

Method for protecting a substrate during machining with a particle beam

Verfahren zum Schützen eines Substrats (1010, 1110) während einer Bearbeitung mit zumindest einem Teilchenstrahl (1027, 1082), wobei das Verfahren die folgenden Schritte aufweist: a. Anbringen einer lokal begrenzten Schutzschicht (1150) auf dem Substrat (1010, 1110); b. Ätzen einer auf dem Substrat (1010, 1110) angeordneten Mo-Si-Absorberschicht (1130) durch den Teilchenstrahl (1027, 1082) und zumindest ein Gas (1245, 1445, 1645, 1745, 1845); und c. Entfernen der lokal begrenzten Schutzschicht (1150, 1955) von dem Substrat (1010, 1110), wobei d. das Anbringen der Schutzschicht (1150, 2350) ein Abscheiden zumindest einer Metall-enthaltenden Schicht auf das Substrat (1010, 1110, 2210) durch einen Elektronenstrahl (1140) und zumindest ein Metallcarbonyl-Präkursorgas (1145) umfasst.

Method for processing an object with miniaturized structures

Verfahren zum Bearbeiten eines Objekts mit miniaturisierten Strukturen, mit den Schritten: a) Zuführen eines Reaktionsgases an eine Oberfläche des Objekts; b) Bearbeiten des Objekts durch Führen eines energetischen Strahls über Bearbeitungsstellen eines zu bearbeitenden Bereichs an der Oberfläche des Objekts, um Material an dem Objekt abzuscheiden oder Material vom Objekt zu entfernen, c) Abscannen der Oberfläche des Objekts mit dem energetischen Strahl und Detektion von Wechselwirkungsprodukten des energetischen Strahls mit dem Objekt, und d) Entscheiden, ob die Bearbeitung des Objekts fortgesetzt werden muss oder beendet werden kann anhand von Informationen, die aus den detektierten Wechselwirkungsprodukten des energetischen Strahls mit dem Objekt gewonnen werden, e) wobei das Bearbeiten des Objekts im Schritt b) mit einem ersten Satz an Strahlparametern für den energetischen Strahl erfolgt und das Abscannen der Oberfläche im Schritt c) mit einem zweiten Satz an Strahlparametern für den energetischen Strahl erfolgt und der zweite... A method for processing an object with miniaturized structures, comprising the steps of: a) supplying a reaction gas to a surface of the object; b) processing the object by passing an energetic beam over processing locations of an area to be machined on the surface of the object in order to deposit material on the object or to remove material from the object, c) scanning the surface of the object with the energetic beam and detecting interaction products of the energetic beam with the object, and d) deciding whether the processing of the object has to be continued or can be ended on the basis of information which is obtained from the detected interaction products of the energetic beam with the object, e) wherein the processing of the object in Step b) is carried out with a first set of beam parameters for the energetic beam and the surface is scanned in step c) with a second set of beam parameters for the energetic beam and the second ...

Method and apparatus for analyzing and for removing a defect of an euv photomask

The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) combining the first, the second and the third data.

Method for high-resolution processing of thin layers with electron beams

The present invention concerns a method for etching a chromium layer in a vacuum chamber with the method steps of introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and introducing an oxygen containing compound into the vacuum chamber. According to a further aspect, the present invention relates to a further method for the highly resolved removal of a layer out of metal and/or metal oxide which is arranged on an isolator or a substrate having poor thermal conductivity, comprising the method steps of arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam is guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer is performed without the supply of reaction gases into the vacuum chamber.

Process for the electron beam-induced etching of gallium contaminated layers

Die Erfindung betrifft ein Verfahren zum elektronenstrahlinduzierten Ätzen einer mit Gallium verunreinigten Schicht (120, 220) mit den Verfahrensschritten des Bereitstellens zumindest einer ersten halogenhaltigen Verbindung als ein Ätzgas an einer Stelle, an der ein Elektronenstrahl auf die Schicht (120, 220) trifft, und des Bereitstellens zumindest einer zweiten halogenhaltigen Verbindung als ein Präkursorgas zum Entfernen des Galliums an dieser Stelle.

Method and apparatus for processing a substrate with a focussed particle beam

The invention relates to method for removing excessive material from a substrate (105), the method comprising the steps of: (a) depositing a removable material around the excessive material using a focused particle beam (127) and at least one deposition gas; and (b) removing the excessive material together with the removable material.

Method and apparatus for processing a substrate with a fo-cussed particle beam

The invention relates to a method for processing a substrate with a focussed particle beam which incidents on the substrate, the method comprising the steps of: (a) generating at least one reference mark on the substrate using the focused particle beam and at least one processing gas, (b) determining a reference position of the at least one reference mark, (c) processing the substrate using the reference position of the reference mark, and (d) removing the at least one reference mark from the substrate.

A method for electron beam induced etching of layers contaminated with gallium

Apparatus and method for investigating an object

The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope (120) and at least one scanning probe microscope (140) with a probe, wherein the scanning particle microscope (120) and the at least one scanning probe microscope (140) are spaced with respect to each other in a common vacuum chamber (102) so that a distance between the optical axis of the scanning particle microscope (120) and the measuring point (195) of the scanning probe microscope (140) in the direction perpendicular to the optical axis of the scanning particle microscope (120) is larger than the maximum field of view of both the scanning probe microscope (140) and the scanning particle microscope (120), wherein the method comprises the step of determining the distance between the measuring point (195) of the scanning probe microscope (140) and the optical axis of the scanning particle microscope (120).

Vorrichtung und methode zur untersuchung oder modifizierung einer oberfläche mittels ladungsträgerstrahls

Method for particle beam-induced processing of a defect of a microlithographic photomask

Method for particle beam-induced processing of a defect (D, D') of a microlithographic photomask (100), including the steps of: a1) providing (S1) an image (300) of at least a portion of the photomask (100), b1) determining (S2) a geometric shape of a defect (D, D') in the image (300) as a repair shape (302, 302'), c1) subdividing (S3) the repair shape (302, 302') into a number of n pixels (304) in accordance with a first rasterization (306), d1) subdividing (S5) the repair shape into a number of m pixels (304') in accordance with a second rasterization (306'), the second rasterization (306') emerging from a subpixel displacement of the first rasterization (306), e1) providing (S4) an activating particle beam (202) and a process gas at each of the n pixels (304) of the repair shape (302, 302') in accordance with the first rasterization (306), and f1) providing (S6) the activating particle beam (202) and the process gas at each of the m pixels (304') of the repair shape (302, 302') in accordance with the second rasterization (306').

Methods and systems for removing a material from a sample

The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.

マイクロリソグラフィフォトマスクの欠陥の粒子ビーム誘起処理のための方法

【課題】マイクロリソグラフィフォトマスクの欠陥の粒子ビーム誘起処理のための改善された方法を提供すること。【解決手段】本方法は、ａ１）フォトマスクの少なくとも一部分の像を提供するステップと、ｂ１）像内の欠陥の幾何学形状を、修復形状として決定するステップと、ｃ１）第１のラスタ化に従って、修復形状を複数のｎ個のピクセルに細分化するステップと、ｄ１）第２のラスタ化に従って、修復形状を複数のｍ個のピクセルに細分化するステップであって、第２のラスタ化は、第１のラスタ化のサブピクセル変位から生じる、ステップと、ｅ１）第１のラスタ化に従って、修復形状のｎ個のピクセルの各々において活性化粒子ビームおよびプロセスガスを提供するステップと、ｆ１）第２のラスタ化に従って、修復形状のｍ個のピクセルの各々において活性化粒子ビームおよびプロセスガスを提供するステップと、を含む。【選択図】図７

Methods and systems for removing a material from a sample

Methods and systems for removing a material from a sample

The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.

マスクの表面を検査するための装置および方法

【課題】例えばリソグラフィマスクなどの検査対象の表面を検査するための装置および方法を提供すること。 【解決手段】本発明の１つの態様によれば、マスクの表面を検査するための装置が、マスクの表面と相互作用するプローブ、および、基準点からのマスクの基準距離を確定するための測定装置を備え、測定装置は、マスクの表面上に配置されていないマスクの測定領域においてマスクの基準距離を測定する。 【選択図】図１

Method for particle beam-induced processing of a defect of a microlithographic photomask

A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of: a1) providing an image of at least a portion of the photomask, b1) determining a geometric shape of a defect in the image as a repair shape, c1) subdividing the repair shape into a number of n pixels in accordance with a first rasterization, d1) subdividing the repair shape into a number of m pixels in accordance with a second rasterization, the second rasterization emerging from a subpixel displacement of the first rasterization, e1) providing an activating particle beam and a process gas at each of the n pixels of the repair shape in accordance with the first rasterization, and f1) providing the activating particle beam and the process gas at each of the m pixels of the repair shape in accordance with the second rasterization.

Verfahren zum Teilchenstrahl-induzierten Bearbeiten eines Defekts einer Photomaske für die Mikrolithographie

Verfahren zum Teilchenstrahl-induzierten Bearbeiten eines Defekts (D, D') einer Photomaske (100) für die Mikrolithographie, mit den Schritten: a1) Bereitstellen (S1) eines Bildes (300) zumindest eines Teils der Photomaske (100), b1) Ermitteln (S2) einer geometrischen Form eines Defekts (D, D') in dem Bild (300) als eine Reparaturform (302, 302'), c1) Unterteilen (S3) der Reparaturform (302, 302') in eine Anzahl von n Pixeln (304) entsprechend einer ersten Rasterung (306), d1) Unterteilen (S5) der Reparaturform in eine Anzahl von m Pixeln (304') entsprechend einer zweiten Rasterung (306'), wobei die zweite Rasterung (306') aus einer Subpixel-Verschiebung der ersten Rasterung (306) hervorgeht, e1) Bereitstellen (S4) eines aktivierenden Teilchenstrahls (202) und eines Prozessgases an jedem der n Pixel (304) der Reparaturform (302, 302') gemäß der ersten Rasterung (306) und f1) Bereitstellen (S6) des aktivierenden Teilchenstrahls (202) und des Prozessgases an jedem der m Pixel (304') der Reparaturform (302, 302') gemäß der zweiten Rasterung (306').

A method for electron beam induced deposition of conducting material

Verfahren zum elektronenstrahlinduzierten abscheiden von leitfähigem material

Die Erfindung betrifft ein Verfahren zum elektronenstrahlinduzierten Abscheiden von elektrisch leitfahigem Material aus einem Metallcarbonyl mit den Verfahrensschritten des Bereitsteilens zumindest eines Elektronenstrahls an einer Stelle eines Substrats (90), des Aufbewahrens des zumindest einen Metallcarbonyls bei einer ersten Temperatur, und des Erwärmens des zumindest einen Metallcarbonyls auf zumindest eine zweite Temperatur vor dem Bereitstellen an der Stelle, an der der zumindest eine Elektronenstrahl auf das Substrat (90) auftrifft.

Verfahren zum elektronenstrahlinduzierten abscheiden von leitfähigem material

Die Erfindung betrifft ein Verfahren zum elektronenstrahlinduzierten Abscheiden von elektrisch leitfahigem Material aus einem Metallcarbonyl mit den Verfahrensschritten des Bereitsteilens zumindest eines Elektronenstrahls an einer Stelle eines Substrats (90), des Aufbewahrens des zumindest einen Metallcarbonyls bei einer ersten Temperatur, und des Erwärmens des zumindest einen Metallcarbonyls auf zumindest eine zweite Temperatur vor dem Bereitstellen an der Stelle, an der der zumindest eine Elektronenstrahl auf das Substrat (90) auftrifft.