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Применить Всего найдено 4. Отображено 4.
13-04-1982 дата публикации

Field effect devices and their fabrication

Номер: US0004325073A1
Автор: Hughes; Brian T., Redstone; Reuben, Vokes; John C., Wight; David R.
Принадлежит: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland

A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material (GaAs) over a surface of a first substrate of semiconductor material (GaAs), applying a second substrate of insulating material, e.g. glass, over the surface of the active layer, removing the first substrate so that the active layer is now supported on the insulating second substrate, and forming source, drain and gate electrodes over the free surface of the active layer. To facilitate removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant, may be formed between the active layer and the first substrate, which buffer layer is removed, following removal of first substrate, using a selective etchant to which the GaAs active layer is resistant. The technique is particularly applicable to high frequency FETs requiring a very thin active channel region interfaced to a substrate having good insulating properties.

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Номер записи: 1
23-03-1982 дата публикации

Field effect devices and their fabrication

Номер: US0004321613A1
Автор: Hughes; Brian T., Vokes; John C., Wight; David R.
Принадлежит: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland

A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material, e.g. GaAs over the surface of a first substrate of semiconductor material, e.g., also GaAs, forming source, drain and gate electrodes over the surface of the active layer, applying a second substrate of insulating material to the surface of this structure, and removing the first substrate. To facilitate the removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant may be formed between the first substrate and active layer, which buffer layer is removed, following removal of the first substrate, using a selective etchant to which the GaAs active layer is resistant. A second gate electrode may be formed on the active layer following removal of the first substrate. The technique is particularly applicable to high frequency FET devices.

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Номер записи: 2
23-02-1982 дата публикации

Field effect devices and their fabrication

Номер: US0004317125A1
Автор: Hughes; Brian T., Vokes; John C., Wight; David R.
Принадлежит: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland

A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material, e.g., GaAs, over a surface of a first substrate of semiconductor material, e.g., also GaAs, forming a gate electrode on the surface of the active layer, applying a second substrate of insulating material to the surface of this structure, removing the first substrate, and forming source and drain electrodes on the opposite surface of the active layer to the gate electrode. To facilitate removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant, may be formed between the active layer and the first substrate, which buffer layer is removed, following removal of the first substrate, using a selective etchant to which the GaAs active layer is resistant. A second gate electrode may be formed on the opposite surface of the active layer to that on which the first gate electrode is formed. The technique is particularly ...

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Номер записи: 3
23-03-1982 дата публикации

Field effect devices and their fabrication

Номер: US4321613A
Автор: Brian T. Hughes, David R. Wight, John C. Vokes
Принадлежит: UK Secretary of State for Defence

A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material, e.g. GaAs over the surface of a first substrate of semiconductor material, e.g., also GaAs, forming source, drain and gate electrodes over the surface of the active layer, applying a second substrate of insulating material to the surface of this structure, and removing the first substrate. To facilitate the removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant may be formed between the first substrate and active layer, which buffer layer is removed, following removal of the first substrate, using a selective etchant to which the GaAs active layer is resistant. A second gate electrode may be formed on the active layer following removal of the first substrate. The technique is particularly applicable to high frequency FET devices.

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Номер записи: 4