07-04-2016 дата публикации
Номер: US20160099409A1
Принадлежит:
Provided are thin resistive devices and related methods, the devices featuring a resistance-switchable active layer having a thickness in the range of from about 1 to about 5 nm and an insulating layer surmounting the resistance-switchable active layer, the insulating layer having a thickness in the range of from about 0.5 nm to about 5 nm. 1. A resistive device , comprising:a resistance-switchable active layer having a thickness in the range of from about 1 to about 5 nm; andan insulating layer surmounting the resistance-switchable active layer, the insulating layer having a thickness in the range of from about 0.5 nm to about 5 nm.2. The resistive device of claim 1 , further comprising an electrode in electronic communication with the resistance-switchable layer claim 1 , the insulating layer claim 1 , or both.3. The resistive device of claim 1 , wherein the insulating layer has a thickness in the range of from about 1 nm to about 3 nm.4. The resistive device of claim 1 , wherein the insulating layer comprises an oxide claim 1 , nitride or oxynitride.5. The resistive device of claim 4 , wherein the insulating layer comprises (1) one or more oxides having the formula AO claim 4 , wherein A comprises Li claim 4 , Na claim 4 , K claim 4 , Rb claim 4 , Cs claim 4 , Be claim 4 , Mg claim 4 , Ca claim 4 , Sr claim 4 , Ba claim 4 , Sc claim 4 , Y claim 4 , Ti claim 4 , Zr claim 4 , Hf claim 4 , V claim 4 , Nb claim 4 , Ta claim 4 , Cr claim 4 , Mo claim 4 , W claim 4 , Mn claim 4 , Tc claim 4 , Re claim 4 , Fe claim 4 , Ru claim 4 , Os claim 4 , Co claim 4 , Rh claim 4 , Ir claim 4 , Ni claim 4 , Pd claim 4 , Pt claim 4 , Cu claim 4 , Ag claim 4 , Au claim 4 , Zn claim 4 , Cd claim 4 , B claim 4 , Al claim 4 , Ga claim 4 , In claim 4 , Si claim 4 , Ge claim 4 , Sn claim 4 , Pb claim 4 , La claim 4 , Ce claim 4 , Pr claim 4 , Nd claim 4 , Pm claim 4 , Sm claim 4 , Eu claim 4 , Gd claim 4 , Tb claim 4 , Dy claim 4 , Ho claim 4 , Er claim 4 , Tm claim 4 , Yb claim 4 , Lu ...
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