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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 3. Отображено 3.
16-09-2013 дата публикации

The current limit circuit apparatus

Номер: TW0201337500A
Автор: CHEN TSUNG-LIN, CHANG EDWARD YI, CHIENG WEI-HUA, CHENG STONE, JENG SHI-LONG, HUANG SHIN-WEI, CHEN, TSUNG-LIN, CHANG, EDWARD YI, CHIENG, WEI-HUA, CHENG, STONE, JENG, SHI-LONG, HUANG, SHIN-WEI
Принадлежит:

The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, and s third resistor. The source and the drain of the first transistor couples with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited, when the current of the gate of the GaN transistor exceeds the predetermined value. The breakdown voltage is increased by limiting the gate current.

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Номер записи: 1
16-09-2013 дата публикации

High-side driver circuit

Номер: TW0201338365A
Автор: CHEN TSUNG-LIN, CHANG EDWARD YI, CHIENG WEI-HUA, CHENG STONE, JENG SHI-LONG, CHANG CHE-WEI, CHEN, TSUNG-LIN, CHANG, EDWARD YI, CHIENG, WEI-HUA, CHENG, STONE, JENG, SHI-LONG, CHANG, CHE-WEI
Принадлежит:

The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit coupled between a resistor and the second capacitor to complete agate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source.

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Номер записи: 2
16-09-2013 дата публикации

High-side gate driver

Номер: TW0201338379A
Автор: CHEN TSUNG-LIN, CHANG EDWARD YI, CHIENG WEI-HUA, CHENG STONE, JENG SHI-LONG, HUANG SHIN-WEI, CHEN, TSUNG-LIN, CHANG, EDWARD YI, CHIENG, WEI-HUA, CHENG, STONE, JENG, SHI-LONG, HUANG, SHIN-WEI
Принадлежит:

This invention provides a high-side gate driver. It includes a bootstrapping circuit so that it can work with the N-type power transistors. Two important features in the level shifter design so that high breakdown-voltage transistors are unnecessary. First, it uses diodes to limit the drain-source voltage of transistors. Secondly, it uses capacitor to sustain the large voltage drop. Because the capacitor with high breakdown voltage can be fabricated using general IC fabrication process, the proposed gate driver design can be fabricated using general IC fabrication process. Thus, it can be a low cost solution to the gate driving circuits.

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Номер записи: 3