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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 10. Отображено 10.
29-10-2008 дата публикации

Closestool cover plate with improved structure and preparing technique thereof

Номер: CN0101292847A
Автор: WANG XIANGJI, CHEN JIAHE, XIANGJI WANG, JIAHE CHEN
Принадлежит:

The present invention provides a closestool cover plate with improved structure and a production technology thereof. The closestool cover plate comprises a surface layer and a core layer which are formed by injection molding, and the surface layer covers the outer periphery of the core layer. The surface layer comprises a surface layer matrix and a seal part. The surface layer matrix is formed by the step that surface layer material plastic fused mass which is first infused into a mould die cavity is extruded and spread to the periphery of the die cavity gradually by core layer material plastic fused mass which is infused later. The seal part is formed by the surface layer plastic fused mass which is put into the mould die cavity last. The surface layer matrix and the seal part are connected as a whole and cover the core layer inside. The surface layer can be formed by the injection molding of high-grade original plastic bean, which ensures that the product has the high-quality surface.

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Номер записи: 1
29-10-2008 дата публикации

Injection molding technique and apparatus for improving production efficiency

Номер: CN0101293394A
Автор: WANG XIANGJI, CHEN JIAHE, XIANGJI WANG, JIAHE CHEN
Принадлежит:

The invention relates to an injection molding technique for improving the manufacture efficiency and a device thereof, which mainly includes that after compounding a die, a screw in the material cylinder of an injection molding machine moves forwards to press a plastic fused mass in the material cylinder into the die cavity of the die to finish the stage of mold filling; a pressure device is used for applying pressure to the plastic fused mass near the location of a nozzle in the material cylinder from the side surface of the material cylinder to finish the stages of increasing density and maintaining pressure; the pressure device stops applying pressure and the screw moves forwards again to circularly carry out next injection. The invention creatively adopts the pressure device independent from a main screw to finish the stages of increasing density and maintaining pressure, thus leading the two stages of increasing density and maintaining pressure to be carried out simultaneously; thereby ...

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Номер записи: 2
23-04-2008 дата публикации

Germanium doping silicon wafer with internal purity absorbing function and preparation method thereof

Номер: CN0101165224A
Автор: YANG DEREN, CHEN JIAHE, MA XIANGYANG, QUE DUANLIN, DEREN YANG, JIAHE CHEN, XIANGYANG MA, DUANLIN QUE
Принадлежит:

The present invention discloses Ge doped silicon chip possessing inward impurity gettering function and its preparation process. The silicon chip has oxygen concentration of (5-15)x10<17>/cu cm, Ge concentration of 1x10<13>-1x10<20>/cu cm, clean region width of 10-100 microns, and bulk microdefect density of 1x10<5>-1x10<10>/cu cm. In the inward impurity gettering process based on quick heat treatment, the small amount of Ge atoms in the silicon chip can form complex with the injected voids to promote oxygen deposition and to form one clean region in certain width near the surface of the silicon chip while increasing the inside bulk microdefect density obviously. The process has high inward impurity gettering effect, and the silicon chip is applied in making integrated circuit and can result in high product quality.

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Номер записи: 3
06-05-2009 дата публикации

Ge doped vertical pulling silicon chip with high mechanical strength and preparation method thereof

Номер: CN0101423978A
Автор: YANG DEREN, CHEN JIAHE, MA XIANGYANG, QUE DUANLIN, DEREN YANG, JIAHE CHEN, XIANGYANG MA, DUANLIN QUE
Принадлежит:

The invention discloses a germanium-doped czochralski silicon chip, wherein the oxygen concentration in the silicon chip is between 5X10<17> and 15X10<17>cm<-3>; the germanium concentration is between 1X10<15> and 1X10<21>cm<-3>; and the density of microdefect is between 1X10<6> and 1X10<10>cm<-3>. The preparation method for the germanium-doped czochralski silicon chip is as follows: the germanium-doped czochralski silicon single-crystal chip with the oxygen concentration and the germanium concentration is subjected to heat preservation for 2 to 50 hours at a temperature of between 450 and 950 DEG C under the condition of argon protection or nitrogen protection, or is subjected to heat preservation for 2 to 50 hours at a temperature of between 450 and 950 DEG C, and subjected to heat preservation for 2 to 30 hours at a temperature of between 1,000 and 1,300 DEG C. after the germanium-doped czochralski silicon single-crystal chip is subjected to the heat-treatment technology, high-density ...

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Номер записи: 4
08-09-2010 дата публикации

Injection nozzle for sandwich closestool cover plate injection molding technique

Номер: CN0101293389B
Автор: CHEN JIAHE, WANG XIANGJI, JIAHE CHEN, XIANGJI WANG
Принадлежит:

The invention discloses an injection nozzle used for the injection molding technique of a sandwich toilet cover plate; the nozzle is provided with an injection opening and two flow passages communicated with the injection opening; the two flow passages are respectively a cortical layer material flow passage and a core material flow passage; the cortical layer material flow passage and the core material flow passage are respectively and correspondingly communicated with a cortical layer material cylinder and a core material cylinder of an injection machine. When manufacturing the toilet cover plate with a sandwich structure, the same nozzle is used for carrying out injection to form a cortical layer and a core part without needing to use two nozzles to carry out injection alternately; thereby simplifying equipment and the technique, reducing the technique cost and simultaneously improving the manufacture efficiency.

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Номер записи: 5
09-06-2010 дата публикации

Injection molding technique and apparatus for improving production efficiency

Номер: CN0101293394B
Автор: CHEN JIAHE, WANG XIANGJI, JIAHE CHEN, XIANGJI WANG
Принадлежит:

The invention relates to an injection molding technique for improving the manufacture efficiency and a device thereof, which mainly includes that after compounding a die, a screw in the material cylinder of an injection molding machine moves forwards to press a plastic fused mass in the material cylinder into the die cavity of the die to finish the stage of mold filling; a pressure device is usedfor applying pressure to the plastic fused mass near the location of a nozzle in the material cylinder from the side surface of the material cylinder to finish the stages of increasing density and maintaining pressure; the pressure device stops applying pressure and the screw moves forwards again to circularly carry out next injection. The invention creatively adopts the pressure device independent from a main screw to finish the stages of increasing density and maintaining pressure, thus leading the two stages of increasing density and maintaining pressure to be carried out simultaneously; thereby ...

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Номер записи: 6
29-10-2008 дата публикации

Injection nozzle for sandwich closestool cover plate injection molding technique

Номер: CN0101293389A
Автор: WANG XIANGJI, CHEN JIAHE, XIANGJI WANG, JIAHE CHEN
Принадлежит:

The invention discloses an injection nozzle used for the injection molding technique of a sandwich toilet cover plate; the nozzle is provided with an injection opening and two flow passages communicated with the injection opening; the two flow passages are respectively a cortical layer material flow passage and a core material flow passage; the cortical layer material flow passage and the core material flow passage are respectively and correspondingly communicated with a cortical layer material cylinder and a core material cylinder of an injection machine. When manufacturing the toilet cover plate with a sandwich structure, the same nozzle is used for carrying out injection to form a cortical layer and a core part without needing to use two nozzles to carry out injection alternately; thereby simplifying equipment and the technique, reducing the technique cost and simultaneously improving the manufacture efficiency.

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Номер записи: 7
09-11-2011 дата публикации

Background image updating method and touch screen

Номер: CN0102236477A
Автор: QIUZONG LIU, TINGXUAN ZHANG, RUYI CAI, TANGWEI XU, JIAHE CHEN, LIU QIUZONG, ZHANG TINGXUAN, CAI RUYI, XU TANGWEI, CHEN JIAHE
Принадлежит:

The invention relates to a background image updating method which is applied to a touch screen. The touch screen provided by the invention comprises a display module, a first image module and a second image module, wherein the first image module captures a first image as a first background image; and the second image module captures a second image as a second background image. The background image updating method provided by the invention comprises the following steps: (a) comparing whether the variable absolute value of subtracting the brightness value of the third image captured by the first image module from the brightness value of the first background image is larger than the default value or not; (b) if the judgment result of the step (a) is so, comparing whether the variable absolute value of subtracting the brightness value of the fourth image captured by the second image module from the brightness value of the second background image is larger than the default value or not; and ...

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Номер записи: 8
28-07-2010 дата публикации

Preparation process of intrinsic gettering structure of germanium-doped and heavy phosphorus-doped straight pulling monocrystalline silicon wafer

Номер: CN0101787568A
Автор: CHEN JIAHE, LIN LIXIA, MA XIANGYANG, YANG DEREN, JIAHE CHEN, LIXIA LIN, XIANGYANG MA, DEREN YANG
Принадлежит:

The invention discloses a preparation process of an intrinsic gettering structure of a germanium-doped and heavy phosphorus-doped straight pulling monocrystalline silicon wafer. The preparation process comprises the following steps of: annealing a germanium-doped and heavy phosphorus-doped straight pulling monocrystalline silicon wafer with an initial oxygen concentration of 0.5*1,018-5*1,018cm-3, a germanium concentration of 0.1*1,019-10*1,019cm-3 and a phosphorus concentration of 1*1,019-10*1,019cm-3 in a diffusing heat treatment furnace under argon atmosphere; or heating in a heat treatment furnace firstly and then annealing under the argon atmosphere. The preparation process can effectively realize the intrinsic gettering structure of the germanium-doped and heavy phosphorus-doped straight pulling monocrystalline silicon wafer, and the intrinsic gettering structure can effectively getter transition metal impurities copper and guarantee the integrity of a clean zone so as to ensure that ...

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Номер записи: 9
27-07-2005 дата публикации

Carbon doped silicon sheet with internal impurity absorbing function and production thereof

Номер: CN0001644767A
Автор: YANG DEREN, CHEN JIAHE, MA XIANGYANG, DEREN YANG, JIAHE CHEN, XIANGYANG MA
Принадлежит:

The invention was about one kind of C mixed silicon dice that has the function of inner absorbency of impurity, which has the oxygen concentration of 5-15X1017 cm-3, and C concentration was 5-30X1016cm-3. It is produced by: 1) the crystal was grown by method of straight drawing, the oxygen concentration of 5-15X1017cm-3 and C concentration was 5-30X1016cm-3 were obtained by control the processing parameter. 2) the silicon dice that has the oxygen concentration of 5-15X1017cm-3 and C concentration was 5-30X1016cm-3 was put into the furnace for heat treatment, which was thermal retarded 1-3 h on the temperature of 1100-1250 deg.C under the argon shield and helium gas shield. Then, it was thermal retarded 4-50 h on the temperature of 600-900 deg.C. After all, it was thermal retarded 4-30h on the temperature of 1000-1200 deg.C. Its advantages higher function of inner absorbency of impurity; good ability in the absorbency of harmful metal; used to the integrated circuit for improving the ratio ...

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Номер записи: 10