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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 6. Отображено 6.
05-05-2010 дата публикации

Device for converting three-color grayscale value into four-color grayscale value and method thereof

Номер: CN0101702304A
Принадлежит:

The invention provides a device for converting three-color grayscale value into four-color grayscale value and a method thereof. The method comprises: obtaining the first color grayscale value, the second color grayscale value and the third color grayscale value of a picture element; calculating the grayscale difference between each two of the three color grayscale values to obtain the grayscale differences from the first to the third; if all the grayscale differences are smaller than a threshold, generating color grayscale conversion values from the first to the fourth, wherein the fourth color grayscale conversion value is larger than zero; otherwise, the fourth color grayscale conversion is equal to zero, and the color grayscale conversion values from the first to the third are equal to the grayscale values from the first to the third respectively. The invention also provides a liquid crystal display using the device for converting three-color grayscale value into four-color grayscale ...

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20-04-2011 дата публикации

Plasma device and manufacturing method of nano-crystalline silicon thin film

Номер: CN0102021514A
Принадлежит:

The invention is suitable for the technical field of semiconductor design and provides a plasma device and a manufacturing method of a nano-crystalline silicon thin film. The plasma device comprises a cavity, an arc electrode group and a loading base, wherein the arc electrode group is positioned into the cavity and comprises an anode and a cathode, an arc discharging space is arranged between the anode and the cathode, the mutually opposite ends of the anode and the cathode are respectively provided with a crystalline silicon target, and the specific resistance of the crystalline silicon target is smaller than 0.01ohm/centimeter; and the carrying base comprises a loading surface which faces to the arc discharging space. Owing to the adoption of the arc electrode group with the crystalline silicon target, the high-quality nano-crystalline silicon thin film can be manufactured by using a simpler manufacturing process.

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22-12-2010 дата публикации

Liquid crystal display device and display panel thereof

Номер: CN0101923258A
Принадлежит:

The invention provides a liquid crystal display device and a display panel thereof. The display panel is provided with an effective display area and also comprises a pixel, a data line and a signal relay component, wherein the pixel is positioned in the effective display area; the data line is coupled with the pixel; the signal relay component is positioned outside the effective display area and provided with the impedance; and the signal relay component is connected between the data line and an output end of a source driver in series to transmit the signal outputted by the output end to the data line, and the output signals and the input signals of the signal relay component are equal.

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30-01-1991 дата публикации

NOT TO BE INFLATED TYRE

Номер: CN0001048825A
Автор: JIALING PENG, PENG JIALING
Принадлежит:

This invention relates to a kind of non-inflated tyre. It is to drill many threaded holes at equal spacings around the circumference of a rim, turning a screw into each threaded hole, then on the said rim between each two neighboring, screws are wound unorderly a layer of spring steel wire and put on another layer of rubber or nylon alternately, and finally the last layer of thicker rubber is applied and hot-pressed to form different varieties of tyre engraving. This kind of mon-inflated tyre depends on spring steel wires as tyre cord net, has a sufficient loading capacity, and no need to be inflated, so that different kinds of dangers and troubles may be avoided due to an explosion of the tyre.

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30-03-2011 дата публикации

Drive circuit of light-emitting diode

Номер: CN0101998725A
Принадлежит:

The invention discloses a drive circuit of a light-emitting diode, comprising a voltage adjustment unit, a switch unit and a control unit, wherein the control unit is electrically connected between the voltage adjustment unit and the switch unit; the voltage adjustment unit is used for outputting a drive voltage to one end of each of multiple loading units, and the switch unit is used for electrically connecting with the other end of each of the multiple loading units; and when the switch unit electrically connects one light-emitting diode string of the loading unit to a current source, the voltage adjustment unit adjusts the value of the driving voltage so as to correspond to the connected light-emitting diode string, thus improving the driving problem caused by electrical property difference of the light-emitting diodes.

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25-07-2012 дата публикации

Plasma device and manufacturing method of nano-crystalline silicon thin film

Номер: CN0102021514B
Принадлежит:

The invention is suitable for the technical field of semiconductor design and provides a plasma device and a manufacturing method of a nano-crystalline silicon thin film. The plasma device comprises a cavity, an arc electrode group and a loading base, wherein the arc electrode group is positioned into the cavity and comprises an anode and a cathode, an arc discharging space is arranged between the anode and the cathode, the mutually opposite ends of the anode and the cathode are respectively provided with a crystalline silicon target, and the specific resistance of the crystalline silicon target is smaller than 0.01ohm/centimeter; and the carrying base comprises a loading surface which faces to the arc discharging space. Owing to the adoption of the arc electrode group with the crystalline silicon target, the high-quality nano-crystalline silicon thin film can be manufactured by using a simpler manufacturing process.

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