Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 4. Отображено 4.
10-11-2022 дата публикации

Devices with Reduced Capacitances

Номер: US20220359263A1
Автор: Yu-Hsin Chan, Cai-Ling Wu, Chang-Wen Chen, Po-Hsiang Huang, Yu-Yu Chen, Kuan-Wei Huang, Jr-Hung Li, Jay Chiu, Ting-Kui Chang
Принадлежит:

In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.

Подробнее
Номер записи: 1
18-01-2024 дата публикации

DEVICES WITH REDUCED CAPACITANCES

Номер: US20240021468A1
Автор: Yu-Hsin Chan, Cai-Ling Wu, Chang-Wen Chen, Po-Hsiang Huang, Yu-Yu Chen, Kuan-Wei Huang, Jr-Hung Li, Jay Chiu, Ting-Kui Chang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.

Подробнее
Номер записи: 2
23-09-2021 дата публикации

Gas sensor and manufacturing method thereof, and gas sensing system

Номер: US20210293755A1
Автор: Chi-Yen Shen, Jing-Jay CHIU, Ming Wen Yang, Tien-Tsan Hung
Принадлежит: I Shou University

A gas sensor comprises a basic part and a sensing layer deposited on the basic part. The basic part includes a circuit board and at least one surface acoustic wave element disposed on the circuit board. The sensing layer is a nanocomposite film of reduced graphene oxide/tungsten oxide/polypyrrole deposited on the surface acoustic wave element. The sensing layer combines reduced graphene oxide, metal oxide, and conductive polymer, so that the sensing layer is able to perform sensing at room temperature, and can be more sensitive. The present invention provides a method for manufacturing a gas sensor, and a gas sensing system including the gas sensor.

Подробнее
Номер записи: 3
23-07-2024 дата публикации

Devices with reduced capacitances

Номер: US12046506B2
Автор: Cai-Ling Wu, Chang-Wen Chen, Jay Chiu, Jr-Hung Li, Kuan-Wei Huang, Po-Hsiang Huang, Ting-Kui CHANG, Yu-Hsin Chan, Yu-Yu Chen
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd

In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.

Подробнее
Номер записи: 4