Thin film capacitor and method of manufacturing the same

A semiconductor device having the thin film capacitor includes a first electrode formed on a substrate, a capacitor insulating film containing a laminated film, which is constructed by laminating an amorphous dielectric film and a polycrystalline dielectric film via a wave-like interface, on the first electrode, and a second electrode formed on the capacitor insulating film.

Semiconductor device with capacitor

A semiconductor device comprises a carrier substrate, an integrated circuit chip mounted on the carrier substrate via bumps, and a capacitor provided to stabilize operation of the integrated circuit chip at high frequencies. In the semiconductor device, the capacitor is electrically connected to pads on bottom of the integrated circuit chip, and the capacitor is provided to have a height on the carrier substrate that is smaller than or equal to a height of the bumps on the carrier substrate.

Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof

A probe card including probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof

A probe card includes probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

THERMOELECTRIC CONVERSION ELEMENT AND METHOD FOR PRODUCING THE SAME

A thermoelectric conversion element includes a p-type film having a perovskite structure, the p-type film including Co; an n-type film having a perovskite structure, the n-type film including Ti; first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including Ti; and a barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including Zr, the multilayer body including the n-type film and the first and second i-type films. 1. A thermoelectric conversion element comprising:a p-type film having a perovskite structure, the p-type film including Co;an n-type film having a perovskite structure, the n-type film including Ti;first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including Ti; anda barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including Zr, the multilayer body including the n-type film and the first and second i-type films.2. The thermoelectric conversion element according to claim 1 ,{'sub': a', '1-a', '3', 'b', '1-b', '3, 'wherein the p-type film is a SrLaCoOfilm (0≦a≦0.5) or a CaLaCoOfilm (0≦b≦0.5).'}3. The thermoelectric conversion element according to claim 1 ,{'sub': 1-e', 'e', '3, 'wherein the barrier film is a SrZrTiOfilm (0≦e≦0.8).'}41. The thermoelectric conversion element according to claim 2 , p wherein the barrier film is a SrZrTiOfilm (0≦e≦0.8).5. The thermoelectric conversion element according to claim 1 ,{'sub': 1-c', 'c', '3', '1-d', 'd', '3, 'wherein the n-type film is a SrLaTiOfilm (0.01≦c≦0.5) or a SrTiNbOfilm (0.01≦d≦0.5).'}6. The thermoelectric conversion element according to claim 2 ,{'sub': 1-c', 'c', '3', '1-d', 'd', '3, 'wherein the n-type ...

Layer capacitor element and production process as well as electronic device

In one aspect of the invention, in a thin layer capacitor element comprising a capacitor having a dielectric layer made of a metal oxide and a protective insulating layer made of a resin material, a barrier layer made of a non-conductive inorganic material is provided between the capacitor and the protective insulating layer. In another aspect of the invention, a thin layer capacitor element is constituted so that a capacitor structure is covered with at least one protective insulating layer composed of a cured resin, the cured resin being formed from at least one resin precursor selected from the group consisting of thermosetting resins, photosetting resins and thermoplastic resins.

OXYGEN EVOLUTION ELECTRODE AND DEVICE

An oxygen evolution device comprises an oxygen evolution electrode and an counter electrode. The oxygen evolution electrode includes: a photocatalyst layer that is formed of a perovskite-type oxide containing at least cobalt (Co), lanthanum (La), and oxygen (O) and that is located at an uppermost layer; a support body that includes at least a layer inside which a depletion layer is formed, and that supports the photocatalyst layer; and a perovskite-type tin compound buffer layer that is degenerately doped n-type and that is disposed between the photocatalyst layer and the support body. 1. An oxygen evolution electrode comprising:a photocatalyst layer that is formed of a perovskite-type oxide containing at least cobalt (Co), lanthanum (La), and oxygen (O) and that is located at an uppermost layer;a support body that includes at least a layer in which a depletion layer is formed, and that supports the photocatalyst layer, anda perovskite-type tin compound buffer layer that is degenerately doped n-type and that is disposed between the photocatalyst layer and the support body.2. The oxygen evolution electrode according to claim 1 , whereinthe photocatalyst layer is successively laminated on the buffer layer, andthe photocatalyst layer has a thickness of 0.5 nm to 20 nm.3. The oxygen evolution electrode according to claim 1 , whereinthe photocatalyst layer is successively laminated on the buffer layer, andthe photocatalyst layer has irregularities or an island structure on a surface of the photocatalyst layer.4. The oxygen evolution electrode according to claim 1 , whereinthe buffer layer has a thickness of 2 to 100 nm.5. The oxygen evolution electrode according to claim 1 , further comprising:a second buffer layer disposed between the buffer layer and the photocatalyst layer, whereinthe surface of the photocatalyst layer is a flat surface.6. The oxygen evolution electrode according to claim 1 , wherein{'sub': 3', '3, 'the photocatalyst layer is made of LaCoOor is made ...

Electromagnetic radiation sensor and method for fabricating the same

An SiO₂ layer ( 3 ), a Ti layer ( 4 ), a Pt layer ( 5 ), a PLZT layer ( 6 ) and an IrO₂ layer ( 7 ) are formed sequentially on an Si substrate ( 2 ). The IrO₂ layer ( 7 ) functioning as a top electrode has a thickness of about 100 nm. Since the IrO₂ layer ( 7 ) has conductivity lower than that of Pt or the like conventionally used as a top electrode and a skin depth deeper than that of Pt or the like, sufficient sensitivity can be attained by a thickness of about 100 nm.

Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same

The capacitor according to the present invention comprises a lower electrode 18 formed on a base substrate 14 , a dielectric film 20 formed on the lower electrode 18 , and an upper electrode 28 formed on the dielectric film 20 and including a polycrystalline conduction film 22 , and a amorphous conduction film 24 formed on the polycrystalline conduction film 22 . Because of the amorphous conduction film 24 included in the upper electrode 28 , which can shut off hydrogen and water, hydrogen and water can be prohibited from arriving at the dielectric film 20 . Accordingly, the dielectric film 20 of an oxide is prevented from being reduced with hydrogen, and the capacitor can have good electric characteristics.

Capacitor device and method of manufacturing the same

A capacitor device includes a capacitor Q constituted by a lower electrode ( 12 ) formed an a substrate ( 10 ), a dielectric film ( 14 ), and an upper electrode ( 16 ); an insulating film ( 18 ) covering the capacitor Q; a first contact hole ( 18 a) formed in the insulating film ( 18 ) on a connection portion ( 16 a) of the upper electrode ( 16 ); an electrode pad ( 20 ) for preventing a diffusion of solder, formed in the first contact hole ( 18 a); and a solder bump ( 22 ) electrically connected to the electrode pad ( 20 ), and the upper electrode ( 16 ) has a protrusion portion ( 16 a) protruding from the dielectric film ( 14 ), and is connected to the first contact hole ( 18 a) on the protrusion portion ( 16 a).

Thermoelectric generator

A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Method for fabricating an interposer

A method for fabricating an interposer includes: forming on one primary surface of a first substrate a thin-film capacitor including a first capacitor electrode, a crystalline capacitor dielectric film formed on the first electrode and a second capacitor electrode formed on the dielectric film; and forming on the primary surface of the first substrate and the capacitor a first layer as semi-cured, and a first partial electrode to be a part of a through-electrode, buried in the first resin layer and electrically connected to the first electrode or the second electrode. The method further includes cutting an upper part of the first partial electrode and an upper part of the first resin layer with a cutting tool; forming on one primary surface of a second substrate a second resin layer as semi-cured, and a second partial electrode to be a part of the through-electrode, buried in the second resin layer and disposed in alignment with the first partial electrode; cutting an upper part of the ...

Thin-film capacitor and method for fabricating the same, electronic device and circuit board

The thin-film capacitor comprises a capacitor part 20 formed over a base substrate 10 and including a first capacitor electrode 14 , a capacitor dielectric film 16 formed over the first capacitor electrode 14 , and a second capacitor electrode 18 formed over the capacitor dielectric film 16 ; leading-out electrodes 26 a, 26 b lead from the first capacitor electrode 14 or the second capacitor electrode 18 and formed of a conducting barrier film which prevents the diffusion of hydrogen or water; and outside connection electrodes 34 a, 34 b for connecting to outside and connected to the leading-out electrodes 26 a, 26 b.

Capacitive element, method of manufacture of the same, and semiconductor device

A capacitive element is characterized by including: a base ( 12 ); a lower barrier layer ( 13 ) formed on the base ( 12 ); capacitors (Q 1 and Q 2 ) made by forming a lower electrode ( 14 a ), capacitor dielectric layers ( 15 a ), and upper electrodes ( 16 a ) in this order on the lower barrier layer ( 13 ); and an upper barrier layer ( 20 ) covering at least the capacitor dielectric layers ( 15 a ) and the lower barrier layer ( 13 ).

Gas generator and gas generation method

A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.

Capacitor device and method of manufacturing the same

A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed on a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).

Interposer and electronic device fabrication method

An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.

THERMOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREOF

A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film. 1. A thermoelectric conversion device , comprising:a substrate;a film of a compound having perovskite structure formed over the substrate;a first electrode formed over the substrate in contact to a top surface of the film at a first region;a second electrode formed in contact with the top surface of the film at a second region offset from the first region;a first heating or cooling part heating or cooling said film at the first region; anda second heating or cooling part cooling or heating the film at the second region,the second heating and cooling part cooling the second region of the film when the first heating or cooling part heats the first region of the film,the second heating and cooling part heating the second region of the film when the first heating or cooling part cools the first region of the film,wherein the film includes, in a crystal that constitutes the compound having perovskite structure, a domain having a crystal orientation different from a crystal orientation of the crystal that constitutes the compound having perovskite structure.2. The thermoelectric conversion device as claimed in claim 1 , wherein the film is a monocrystalline film of SrTiOhaving a (001) surface orientation claim 1 , and wherein the domain has a (031) surface orientation.3. The thermoelectric conversion device as claimed in claim 1 , wherein the film is a monocrystalline film of SrTiOhaving a thermal conductivity κ of 2 W/mK or less.4. The thermoelectric conversion device as claimed in claim 3 , wherein the film contains at least La (lanthanum) and Nb (niobium) with a proportion of 20 atomic % or more in total.5. The thermoelectric conversion device as claimed in claim 4 ...

Interposer and method for fabricating the same

The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48 ; thin-film capacitors 18 a , 18 b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12 a , 12 b, second capacitor electrodes 16 opposed to the first capacitor electrode 12 a , 12 b and the second capacitor electrode 16 , and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12 a , 12 b and the second capacitor electrode 16 ; a first through-electrode 77 a formed through the base 8 and electrically connected to the first capacitor electrode 12 a , 12 b; and a second through-electrode 77 b formed through the base 8 and electrically connected to the second capacitor electrode 16.

Interposer and method for fabricating the same

The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48 ; thin-film capacitors 18 a, 18 b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12 a, 12 b , second capacitor electrodes 16 opposed to the first capacitor electrode 12 a, 12 b and the second capacitor electrode 16 , and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12 a, 12 b and the second capacitor electrode 16 ; a first through-electrode 77 a formed through the base 8 and electrically connected to the first capacitor electrode 12 a, 12 b ; and a second through-electrode 77 b formed through the base 8 and electrically connected to the second capacitor electrode 16.

OXYGEN GENERATING ELECTRODE AND OXYGEN GENERATOR

An oxygen generating electrode includes: an oxide film having a perovskite structure; an organic film over the oxide film; and a conductive film electrically coupled to the organic film, wherein the organic film contains an amino acid having a side chain of negative polarity. 1. An oxygen generating electrode comprising:an oxide film having a perovskite structure;an organic film over the oxide film; anda conductive film electrically coupled to the organic film,wherein the organic film contains an amino acid having a side chain of negative polarity.2. The oxygen generating electrode according to claim 1 , wherein the amino acid is L-glutamic acid.3. The oxygen generating electrode according to claim 1 , wherein the conductive film is a porous Au film.4. The oxygen generating electrode according to claim 1 , wherein the oxide film contains an oxide represented by a chemical formula ABOwherein A is a metal element having a valence of 3 or 4, andB is Ni.5. The oxygen generating electrode according to claim 4 , wherein A is Pr claim 4 , La claim 4 , Sm claim 4 , Nd claim 4 , Gd claim 4 , Eu or any combination of Pr claim 4 , La claim 4 , Sm claim 4 , Nd claim 4 , Gd and Eu.6. The oxygen generating electrode according to claim 4 , wherein 6 has a value greater than 0 and less than 0.5.7. The oxygen generating electrode according to claim 4 , wherein the oxide film contains PrNiO.8. An oxygen generator comprising:an aqueous electrolyte solution;an oxygen generating electrode in the aqueous electrolyte solution;a reference electrode and a counter electrode in the aqueous electrolyte solution; anda potentiostat connected to the oxygen generating electrode, the reference electrode and the counter electrode,wherein the oxygen generating electrode includes:an oxide film having a perovskite structure;an organic film which is provided over the oxide film and contains an amino acid having a side chain of negative polarity; anda conductive film electrically coupled to the organic ...

OXYGEN GENERATION ELECTRODE AND OXYGEN GENERATION APPARATUS

An oxygen generation electrode includes: a conductive substrate; and an oxide film formed on a first surface of the conductive substrate and containing Ba, Sn, and La or Sb, wherein the oxide film has a first absorption edge in a visible light region and a second absorption edge in an infrared light region.

Capacitive element and method of manufacturing the same

A capacitive element which includes: a silicon substrate (base material) 1 ; a base insulating film 2 formed on the silicon substrate 1 ; and a capacitor Q constituted by forming a bottom electrode 4 a , a capacitor dielectric film 5 a and a top electrode 6 a on the base insulating film 2 . The capacitive element is characterized in that the capacitor dielectric film 5 a is composed of a material with the formula (Ba 1−y ,Sr y ) m Y p Ti Q O 3+δ , where 0<p/(p+m+Q)≦0.015, −0.5<δ<0.5.

Thin film capacitor and fabrication method thereof

A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1 Подробнее

THERMOELECTRIC GENERATOR

A thermoelectric generator includes: a substrate; a thermoelectric conversion film on the substrate; a thermally insulating film that covers the thermoelectric conversion film; a first heat transfer material that transfers a first heat above the thermally insulating film to a first portion of the thermoelectric conversion film; and a second heat transfer material that transfers a second heat below the substrate to a second portion of the thermoelectric conversion film, the second portion being separated from the first portion. 1. A thermoelectric generator , comprising:a substrate;a thermoelectric conversion film on the substrate;a thermally insulating film that covers the thermoelectric conversion film;a first heat transfer material that transfers a first heat above the thermally insulating film to a first portion of the thermoelectric conversion film; anda second heat transfer material that transfers a second heat below the substrate to a second portion of the thermoelectric conversion film, the second portion being separated from the first portion.2. The thermoelectric generator according to claim 1 , wherein the thermoelectric conversion film comprises a p-type thermoelectric conversion film and an n-type thermoelectric conversion film.3. The thermoelectric generator according to claim 1 , wherein the thermoelectric conversion film comprises p-type thermoelectric conversion films and n-type thermoelectric conversion films in couples claim 1 , the p-type thermoelectric conversion films and the n-type thermoelectric conversion films being alternately and electrically connected in series.4. The thermoelectric generator according to claim 3 , wherein the p-type thermoelectric conversion film and the n-type thermoelectric conversion film in each of the couples are in contact with each other at a position right below the first heat transfer material.5. A thermoelectric generator claim 3 , comprising:a substrate;couples of p-type thermoelectric conversion films and n- ...

Tailored insulator properties for devices

A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

Photochemical electrode and hydrogen evolution device

A photochemical electrode includes a conductive oxide. Fermi energy of the conductive oxide is higher than a first energy minimum of a first band having a lowest energy and is lower than a second energy minimum of a second band having a higher energy than the first band among bands whose curvatures are positive in reciprocal space. The first energy minimum and the second energy minimum are at the same point of wave vector. A difference between the second energy minimum and the first energy minimum is not less than 1 eV nor more than 3 eV, and is smaller than a difference between the first energy minimum and an energy maximum of a band having a highest energy among bands whose curvatures are negative.

Laminated thin-film device, manufacturing method thereof, and circuit

The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

Fuel cell system and method of controlling same

A fuel cell system includes a fuel cell configured to generate electric power with a fuel gas and an oxygen gas fed to the fuel cell and to discharge exhaust gas including CO2 as a result of generating the electric power; a CO extraction part configured to reduce the CO2 in the exhaust gas fed to the CO extraction part to CO, the CO extraction part including a processing container fed with the exhaust gas and a CO2 adsorbing member provided in the processing container and formed of an oxide having an oxygen deficiency; and a CO recycling part configured to feed the extracted CO to the fuel cell as part of the fuel gas.

Method of manufacturing thin film capacitor

A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

OXYGEN GENERATING ELECTRODE, OXYGEN GENERATING ELECTRODE DEVICE, AND PHOTOELECTRIC CONVERTER

An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.

THERMOELECTRIC CONVERSION ELEMENT AND METHOD FOR PRODUCING THE SAME

A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO, where 0.1 Подробнее

Thin film capacitor and fabrication method thereof

A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1 Подробнее

Electronic device and method of applying voltage to capacitor

An electronic device comprises a silicon substrate (base material), an underlying insulating film formed on the silicon substrate, a capacitor constructed by forming a bottom electrode, a capacitor dielectric film, and a top electrode sequentially on the underlying insulating film, and a voltage supply circuit for supplying a voltage with a bipolar waveform to at least one of the bottom electrode and the top electrode, wherein an amplitude of the voltage is set to 5x10⁵ d (V) or less (d: an interval (cm) between the top electrode and the bottom electrode). Accordingly, an electronic device and a method of applying a voltage to a capacitor, capable of prolonging a lifetime of a capacitor by preventing degradation of a capacitor dielectric film are provided.

Capacitive element, semiconductor device, and method of manufacturing the capacitive element

A capacitive element includes a base member 10, an underlying insulating film 11 formed on the base member 10, a capacitor Q constructed by forming a lower electrode 13, a capacitor dielectric film 14, and an upper electrode 15 sequentially on the underlying insulating film 11, a lower protection insulating film 16a formed on the upper electrode 15 to cover at least a part of the capacitor Q, and an upper protection insulating film 16b formed on the lower protection insulating film 16a and having a wider energy band gap than the lower protection insulating film 16a.

THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE AND METHOD FOR MANUFACTURING THE THERMOELECTRIC CONVERSION ELEMENT

A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network.

Thermoelectric conversion element and method for producing the same

A thermoelectric conversion element includes a p-type film having a perovskite structure, the p-type film including Co; an n-type film having a perovskite structure, the n-type film including Ti; first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including Ti; and a barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including Zr, the multilayer body including the n-type film and the first and second i-type films.

PLATING METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD AND CIRCUIT BOARD FABRICATION METHOD

The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10 as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Capacitor device and method of manufacturing the same

A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed on a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).

Thin film capacitor and method of manufacturing the same

A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

Oxygen generation apparatus

An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.

Thermoelectric conversion device having perovskite crystal including grain domain

A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

Photochemical electrode and oxygen evolution device

A photochemical electrode includes: an optical absorption layer; a catalyst layer for oxygen evolution reaction over the optical absorption layer; and a conducting layer over the catalyst layer. A valance band maximum of the catalyst layer is higher than a valance band maximum of the optical absorption layer. A work function of the conducting layer is larger than a work function of the catalyst layer.

Interposer and electronic device fabrication method

An interposer 2 including a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56 ; a thin-film capacitor 12 buried in the base 10 , including a lower electrode 20 , a capacitor dielectric film 22 and an upper electrode 24 ; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12 ; and a second through-electrode 14 a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12 , further including: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12 , a plurality of the first through-electrodes 14 b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48 , and said plurality of the first through-electrodes 14 b being electrically interconnected by the interconnections 48 ...

PLATING METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD AND CIRCUIT BOARD FABRICATION METHOD

The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Capacitor and method for fabricating the same

The capacitor comprises an lower electrode 22, a dielectric film 30 formed on the lower electrode 22, a floating electrode 20 formed on the dielectric film 30, a dielectric film 50 formed on the floating electrode 40 and having a film orientation different from that of the dielectric film 30, and an upper electrode 80 formed on the dielectric film 50, whereby various characteristics depending on film orientations of the dielectric films can be simultaneously improved.

Laminated thin-film device, manufacturing method thereof, and circuit

The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

Thin film capacitor and fabrication method thereof

A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1<R<0.2.

Thin film capacitor and method of manufacturing the same

The present invention comprises the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in which an amorphous dielectric film and a polycrystalline dielectric film are laminated via a wave-like interface, by forming sequentially and successively the amorphous dielectric film and the polycrystalline dielectric film made of same material on the first electrode, (c) forming a second electrode on the capacitor insulating film, and (d) a step of annealing the capacitor insulating film in an oxygen atmosphere.

Thin film capacitor and method for manufacturing the same

The present invention provides the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in which an amorphous dielectric film and a polycrystalline dielectric film are laminated via a wave-like interface, by forming sequentially and successively the amorphous dielectric film and the polycrystalline dielectric film made of same material on the first electrode, (c) forming a second electrode on the capacitor insulating film, and (d) a step of annealing the capacitor insulating film in an oxygen atmosphere.

Tailored insulator properties for devices

A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

GAS GENERATOR AND GAS GENERATION METHOD

A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.

Oxygen generating electrode and oxygen generator

An oxygen generating electrode includes: an oxide film having a perovskite structure; an organic film over the oxide film; and a conductive film electrically coupled to the organic film, wherein the organic film contains an amino acid having a side chain of negative polarity.

THERMOELECTRIC CONVERSION DEVICE

A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

THERMOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION APPARATUS

A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV.

FUEL CELL SYSTEM AND METHOD OF CONTROLLING SAME

A fuel cell system includes a fuel cell configured to generate electric power with a fuel gas and an oxygen gas fed to the fuel cell and to discharge exhaust gas including CO2 as a result of generating the electric power; a CO extraction part configured to reduce the CO2 in the exhaust gas fed to the CO extraction part to CO, the CO extraction part including a processing container fed with the exhaust gas and a CO2 adsorbing member provided in the processing container and formed of an oxide having an oxygen deficiency; and a CO recycling part configured to feed the extracted CO to the fuel cell as part of the fuel gas.

OXYGEN GENERATION ELECTRODE AND OXYGEN GENERATION APPARATUS

An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.

Layer capacitor element and production process as well as electronic device

In one aspect of the invention, a thin layer capacitor element has a capacitor with a dielectric layer made of a metal oxide and a protective insulating layer made of a resin material, and a barrier layer made of a non-conductive inorganic material is provided between the capacitor and the protective insulating layer. In another aspect of the invention, a thin layer capacitor element is constituted so that a capacitor structure is covered with at least one protective insulating layer composed of a cured resin, the cured resin being formed from at least one resin precursor selected from the group consisting of thermosetting resins, photosetting resins and thermoplastic resins.

PHOTOCHEMICAL ELECTRODE AND OXYGEN EVOLUTION DEVICE

A photochemical electrode includes: an optical absorption layer; a catalyst layer for oxygen evolution reaction over the optical absorption layer; and a conducting layer over the catalyst layer. A valance band maximum of the catalyst layer is higher than a valance band maximum of the optical absorption layer. A work function of the conducting layer is larger than a work function of the catalyst layer.

PHOTOCHEMICAL ELECTRODE AND HYDROGEN EVOLUTION DEVICE

A photochemical electrode includes a conductive oxide. Fermi energy of the conductive oxide is higher than a first energy minimum of a first band having a lowest energy and is lower than a second energy minimum of a second band having a higher energy than the first band among bands whose curvatures are positive in reciprocal space. The first energy minimum and the second energy minimum are at the same point of wave vector. A difference between the second energy minimum and the first energy minimum is not less than 1 eV nor more than 3 eV, and is smaller than a difference between the first energy minimum and an energy maximum of a band having a highest energy among bands whose curvatures are negative.

Thin film capacitor and its manufacture method

A thin film capacitor is provided which includes a single crystal high dielectric constant dielectric layer. The thin film capacitor has a single crystal silicon substrate, a single crystal intermediate layer epitaxially grown on the single crystal silicon substrate, a single crystal lower electrode epitaxially grown on the single crystal intermediate layer, a single crystal high dielectric constant dielectric layer epitaxially grown on the lower electrode layer, an upper electrode layer formed above the single crystal high dielectric constant dielectric layer, and a plurality of conductor terminals connected to the lower electrode layer and upper electrode layer at a plurality of positions.

Oxygen generating electrode, oxygen generating electrode device, and photoelectric converter

An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.

Thin film capacitive element, method for producing same and electronic device

An integrated thin film capacitive element comprising a dielectric material of the specified composition that exhibits increased voltage tunability of capacitance and capacitance density and a production process thereof are disclosed. The integrated thin film capacitive element comprises a capacitor structure constituted from a lower electrode, a dielectric layer comprised of the high dielectric constant material represented by the formula: (Ba_(1-y)(1-x)Sr_(1-y)xY_y)Ti_1+zO_3+delta with the range 0(1-y)(1-x)+Sr_(1-y)x)/Ti_1+z<1, and an upper electrode. An electronic device comprising the capacitive element of the present invention is also disclosed.

MULTILAYER THIN-FILM STRUCTURE, WATER SPLITTING SYSTEM USING THE SAME, AND METHOD OF FABRICATING MULTLAYER THIN-FILM STRUCTURE

A multilayer thin-film structure has a layered structure with an alternative stacking series of a first layer of a first oxide semiconductor and a second layer of a second oxide semiconductor different from the first oxide semiconductor, wherein the layered structure has one or more band gaps including a range of 1.3 eV to 1.5 eV.

Capacitive element, method of manufacture of the same, and semiconductor device

A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

Plating method, semiconductor device fabrication method and circuit board fabrication method

The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Plating method, semiconductor device fabrication method and circuit board fabrication method

The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Laminated thin-film device, manufacturing method thereof, and circuit

The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

Ferroelectric capacitor and method of manufacturing the same

After a step of fabricating a MOS transistor (14) on a semiconductor substrate (11) and further steps up to bury a W plug (24), an Ir film (25a), an IrOy film (25b), a PZT film (26), and an IrOx film (27) are formed sequentially over the entire surface. The composition of the PZT film (26) is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (25a), the IrOy film (25b), the PZT film (26) and the IrOx film (27), annealing is effected to remedy the damage to the PZT film (26) that is caused when the IrOx film (27) is formed and to diffuse Ir in the IrOx film (27) into the PZT film (26). As a result, the Ir diffused into the PZT film (26) concentrates at an interface between the IrOx film (27) and the PZT film (26) and at grain boundaries in the PZT film (26), and the Ir concentrations at the interface and boundaries are higher than those in the grains.

Method for producing thermoelectric conversion element

A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1 Подробнее

Thermoelectric conversion device

A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

THERMOELECTRIC GENERATOR

A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Plating method, semiconductor device fabrication method and circuit board fabrication method

The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10 as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Superconducting tunable filter having a patch resonator pattern tuned by a variable dielectric constant top plate

A superconducting tunable filter comprises a dielectric base plate; a patch-shaped resonator pattern formed of a superconducting material on the dielectric base plate; a top dielectric locally placed on the superconducting resonator pattern at a prescribed position and made of a material with an electric-field dependent permittivity; a conducting pattern formed on a top face of the top dielectric; and a bias voltage supply configured to apply a bias voltage between the conducting pattern and the superconducting resonator pattern.

THERMOELECTRIC GENERATOR

A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Thin film capacitor and fabrication method thereof

A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1 Подробнее

Method for producing thermoelectric conversion apparatus and thermoelectric conversion apparatus

A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV.

Thermoelectric conversion element and method for producing the same

A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1 Подробнее

Interposer and electronic device fabrication method

An interposer 2 comprising a base 10 formed of a plurality of resin layers 26, 34, 42, 52, 56; a thin-film capacitor 12 buried in the base 10, including a lower electrode 20, a capacitor dielectric film 22 and an upper electrode 24; a first through-electrode 14b formed through the base 10 and electrically connected to the upper electrode 24 of the thin-film capacitor 12; and a second through-electrode 14a formed through the base 10 and electrically connected to the lower electrode 20 of the thin-film capacitor 12, further comprising: an interconnection 48 buried in the base 10 and electrically connected to the respective upper electrodes 24 of a plurality of the thin-film capacitors 12, a plurality of the first through-electrodes 14b being electrically connected to the upper electrodes 24 of said plurality of the thin-film capacitors 12 via the interconnection 48, and said plurality of the first through-electrodes 14b being electrically interconnected by the interconnections 48.

Capacitive element, method of manufacture of the same, and semiconductor device

A capacitive element is characterized by including: a base ( 12 ); a lower barrier layer ( 13 ) formed on the base ( 12 ); capacitors (Q₁ and Q₂) made by forming a lower electrode ( 14 a), capacitor dielectric layers ( 15 a), and upper electrodes ( 16 a) in this order on the lower barrier layer ( 13 ); and an upper barrier layer ( 20 ) covering at least the capacitor dielectric layers ( 15 a) and the lower barrier layer ( 13 ).

Thermoelectric conversion element

A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network.

THERMOELECTRIC CONVERSION ELEMENT

A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network. 1. A thermoelectric conversion module comprising:a first layer including a perovskite-type oxide of a first conductivity type and a perovskite-type oxide of a second conductivity type, which are coupled in series to form a predetermined pattern;a second layer of perovskite-type oxide that is formed directly on the first layer in a stacking direction; anda pair of electrodes formed directly on, and in direct electrical contact with, a top surface of the second layer,wherein the second layer has a band gap larger than a band gap of the first layer and the pair of electrodes are electrically connected to the first layer by a current path formed by transition lines or a transition line network in the second layer.2. The thermoelectric conversion module according to claim 1 , wherein one of the pair of electrodes is electrically connected to the first layer of the first conductivity type by the transition lines or the transition line network in the second layerand the other of the pair of electrodes is electrically connected to the first layer of the second conductivity type by the transition lines or the transition line network in the second layer. This application is a divisional of U.S. application Ser. No. 15/064,003, filed Mar. 8, 2016, which claims priority to Japanese Patent Application No. 2015-046131, filed Mar. 9, 2015, the entire contents of which are incorporated herein by reference.The embodiments discussed herein are related to a thermoelectric conversion element, a ...

Ferroelectric capacitor and its manufacturing method

After a step of fabricating a MOS transistor (14) on a semiconductor substrate (11) and burying a W plug (24), an Ir film (25a), an IrOx film (25b), a PZT film (26), and an IrOx film (27) are formed sequentially over the entire surface. The composition of the PZT film (26) is such that the content of Pb exceeds that of Zr and that of Ti. After the formation of the films (25a, 25b, 26, 27), annealing is effected to remedy the damage to the PZT film (26) that is caused when the IrOx film (27) is formed and to diffuse Ir in the IrOx film (27) into the PZT film (26). As a result, the Ir atoms diffused into the PZT film (26) concentrate at the interface between the IrOx film (27) and the PZT film (26) and at the grain boundaries in the PZT film (26), and consequently the Ir concentrations at the interface and grain boundaries are higher than those in crystals.

Thin-film capacitor and method for fabricating the same, electronic device and circuit board

Capacitor unit and method for fabricating the same

A capacitor unit comprising a capacitor Q consisting of a lower electrode (12), a dielectric film (14) and an upper electrode (16) that are formed on a substrate (10), an insulating film (18) covering the capacitor Q, a first contact hole (18a) formed through the insulating film (18) above the contact part (16a) of the upper electrode (16), an electrode pad (20) for preventing diffusion formed in the first contact hole (18a), and a solder bump (22) connected electrically with the electrode pad (20), wherein the upper electrode (16) has a part (16a) projecting from the dielectric film (14) and is connected with the first contact hole (18a) on the projecting part (16a).

酸素発生電極及び酸素発生装置

【課題】比較的安価な元素を用いても優れた熱的安定性を得ることができる酸素発生電極及び酸素発生装置を提供する。【解決手段】酸素発生電極１には、ペロブスカイト構造を備えたスズ酸塩を含む導電層１２と、導電層１２上の光吸収層１３と、ペロブスカイト構造を備えた酸化物を含む光吸収層１３上の酸素発生反応の触媒層１４と、が含まれる。導電層１２は、不純物を含んで縮退しており、光吸収層１３は導電層１２にタイプＩＩのヘテロ接合をしている。触媒層１４は、不純物を含んで縮退しており、触媒層１４の価電子帯の上端は光吸収層１３の価電子帯の上端より高い。【選択図】図１

熱電変換装置

【課題】利用可能な用途を広げることができる熱電変換装置を提供する。【解決手段】基板１１と、基板１１上の複数対のｐ型熱電変換膜１２及びｎ型熱電変換膜１３と、ｐ型熱電変換膜１２及びｎ型熱電変換膜１３を覆う断熱膜と、断熱膜の上方の温度をｐ型熱電変換膜１２の第１の部分及びｎ型熱電変換膜１３の第１の部分に伝達する第１の伝熱材２１と、基板１１の下方の温度をｐ型熱電変換膜１２の第１の部分から離間した第２の部分及びｎ型熱電変換膜１３の第１の部分から離間した第２の部分に伝達する第２の伝熱材２２と、が含まれる。対をなすｐ型熱電変換膜１２及びｎ型熱電変換膜１３は第１の伝熱材２１の直下で互いに接触し、隣り合う対の間では一方のｐ型熱電変換膜１２と他方のｎ型熱電変換膜１３とが互いに接触し、複数対がｐ型熱電変換膜１２及びｎ型熱電変換膜１３の直列体を構成している。【選択図】図１

酸素発生電極、及び酸素発生装置

【課題】バンドギャップの調整が容易で高い変換効率を達成することのできる酸素発生電極を提供する。【解決手段】酸素発生電極は、伝導層と、光触媒層と、前記伝導層と前記光触媒層の間に配置される光吸収層と、を有し、前記光吸収層は１または複数のペロブスカイト型の薄膜で形成されている。複数の前記薄膜の各々を、スズ（Ｓｎ）、酸素（Ｏ）、硫黄（Ｓ）、及び周期表の第１族または第２族から選択される１以上の元素を含む材料を形成し、前記薄膜の各々で、バンドギャップが０ｅＶ〜４ｅＶの範囲の所望の値をとるようにＳの含有割合が設定されている。【選択図】図４

酸素発生電極及び酸素発生装置

【課題】高効率で酸素ガスを発生させることができる酸素発生電極及び酸素発生装置を提供する。【解決手段】酸素発生電極１０には、導電性基板１１、導電性基板１１の第１の面上に形成され、Ｂａ、Ｓｎ、及びＬａ若しくはＳｂを含む酸化膜１２、並びに導電性基板１１の第２の面上に形成された電極１３が含まれる。酸化膜１２は、可視光領域内の第１の吸収端ＡＥ１及び赤外光領域の第２の吸収端ＡＥ２を有する。【選択図】図１

光化学電極及び酸素発生装置

【課題】化学的な安定性を確保しながら高効率で酸素ガスを発生させることができる光化学電極及び酸素発生装置を提供する。 【解決手段】光吸収層１２と、光吸収層１２上の酸素発生反応の触媒層１３と、触媒層１３上の導電層１４と、が含まれる。触媒層１３の価電子帯の上端は光吸収層１２の価電子帯の上端より高く、導電層１４の仕事関数は触媒層１３の仕事関数より大きい。 【選択図】図２

熱電変換素子、熱電変換モジュール、及び熱電変換素子の製造方法

【課題】 簡単な電極構成で導電チャネルとのコンタクトをとることのできる熱電変換素子を提供する。【解決手段】 熱電変換素子は、導電性または半導電性を有するペロブスカイト型酸化物の第１の層と、前記第１の層と積層方向に接して配置されるペロブスカイト型酸化物の第２の層と、前記第２の層の表面に配置される電極と、を有し、前記第２の層は、前記第１の層のバンドギャップよりも大きいバンドギャップを有し、前記第２の層を膜厚方向に貫通する転移線または転移線ネットワークを有する。【選択図】図２

光化学電極及び水素発生装置

【課題】電気的なバイアスを印加せずとも高効率で水素ガスを発生させることができる光化学電極及び水素発生装置を提供する。【解決手段】光化学電極は導電性酸化物が含有する。導電性酸化物のフェルミ準位ＥFは、波数空間において、曲率が正のバンドのうちで、最もエネルギが低い第１のバンドＥｃ１の第１の下端ｃｍｉｎより高く、第１のバンドＥｃ１よりもエネルギが高い第２のバンドＥｃ２の第２の下端Ｅｏｐｔｍｉｎよりも低く、第１の下端Ｅｃｍｉｎ及び第２の下端Ｅｏｐｔｍｉｎは、互いに同一の波数ベクトルの点にあり、第２の下端Ｅｏｐｔｍｉｎと第１の下端Ｅｃｍｉｎとの差は、１ｅＶ以上３ｅＶ以下であり、第１の下端Ｅｃｍｉｎと曲率が負のバンドのうちで最もエネルギが高いバンドの上端ＶＢｍａｘとの差（バンドギャップ）Ｅｇより小さい。【選択図】図１

インターポーザ及び電子装置の製造方法

【課題】試験工程の簡略化を実現しうるインターポーザ及びそのインターポーザを用いた電子装置の製造方法を提供する。 【解決手段】複数の樹脂層より成る基材１０と；基材１０に埋め込まれ、下部電極２０とキャパシタ誘電体膜２２と上部電極２４とを有する薄膜キャパシタ１２と；基材１０を貫き、薄膜キャパシタの上部電極に電気的に接続された第１の貫通電極１４ｂと；基材を貫き、薄膜キャパシタの下部電極に電気的に接続された第２の貫通電極１４ａとを有するインターポーザであって、基材に埋め込まれ、複数の薄膜キャパシタの各々の上部電極に電気的に接続された配線４８を更に有し、複数の第１の貫通電極が、配線を介して、複数の薄膜キャパシタの上部電極に電気的に接続されており、複数の第１の貫通電極が、配線により、互いに電気的に接続されている。 【選択図】 図１

酸素発生電極、及び酸素発生装置

【課題】酸化物ベースの光触媒の薄膜化と高いＯＥＲ活性を両立させた酸素発生電極と酸素発生装置を提供する。【解決手段】酸素発生電極は、少なくともコバルト（Ｃｏ）とランタン（Ｌａ）と酸素（Ｏ）を含むペロブスカイト型の酸化物で形成されて最上層に位置する光触媒層と、前記光触媒層を支持する単層または多層の支持体であって、内部に空乏層が生じる層を少なくとも含む支持体と、前記光触媒層と前記支持体の間に配置されるｎ型に縮退ドープされたペロブスカイ型のスズ化合物バッファ層と、を有する。【選択図】図８