Reduced-pressure vapor phase growing apparatus

A dry-etching method and an equipment for dry-etching

An argon gas is introduced into an ECR plasma-generating chamber from a gas flow rate-controlling equipment with a gas supplying tube, and a hydrogen gas is introduced into a vacuum chamber with a gas supplying tube as well. Then, an ECR plasma is generated in the ECR plasma-generating chamber and is introduced into the vacuum chamber. The ECR plasma is irradiated to a silicon nitride film and thereby only nitrogen elements are removed. Changing the flow rates of the hydrogen gas and the argon gas, an ECR plasma generated as above-mentioned is irradiated to the silicon nitride film and thereby only silicon elements are removed.

Production of semiconductor device having mis transistors

A vapour depositing method and an apparatus therefor

A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

Chemical vapor deposition apparatus

A chemical vapor deposition apparatus has a reactor divided into a reaction space and a purging space by a susceptor for supporting a wafer and a loading chamber communicated through a gate with the reactor. Exhaust units are communicated with the reactor and loading chamber, respectively, so that the pressures in the reactor and loading chamber may be reduced. The susceptor has a plurality of recesses to aid placing or scooping the water. Through a transparent wall on the side of the purging space, the susceptor is heated by a lamp unit disposed outside the transparent wall. The loading chamber includes a wafer transport mechanism for charging a wafer into the reactor or discharging a processed wafer from the reactor. An unprocessed wafer is loaded to the loading chamber from a cassette and the processed wafer is unloaded to the cassette. One or a small number of wafers are processed at one time. A uniform film is deposited with a high reproducibility. The processing rate is high and the chemical vapor deposition apparatus is made compact in size.

Irreversible semiconductor switching element and semiconductor memory device utilizing the same

Specification Title of the Invention Irreversible Semiconductor Switching Element and Semiconductor Memory Device Utilizing the Same Abstract of the Disclosure The switching element comprised a high resistivity polycrystalline silicon resistor whose resistance irreversi-bly decreases to a small value at a threshold voltage when the voltage across the resistor reaches the threshold voltage. A semiconductor memory devise is constituted by using the switching element as a memory cell, and a semiconductor gate element for controlling the current flowing through the semiconductor switching element. The switching element has simple construction and can operate with low voltage and low current. It is not necessary to blow fuse or destroy diode as in the prior art semiconductor switching element.

Laminate structure and method of manufacturing the same

Disclosed is a method of manufacturing a laminate structure, comprising the steps of laminating a plurality of photosensitive material layers (11, 12) one upon the other to form a laminated photosensitive layer, the photosensitive characteristics of at least one of the photosensitive material layers (11, 12) differing from those of the other photosensitive material layers (11, 12), applying a light exposure treatment to the laminated photosensitive layer a plurality of times under different light exposure conditions so as to transfer desired patterns to the plural photosensitive material layers (11, 12), and developing the plural photosensitive material layers (11, 12) having the patterns transferred thereto.

Formation of thin metallic film

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Vapor growth apparatus

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method of manufacturing a semiconductor device and a semiconductor manufacture system

This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controller 61 controls a heater 2 so that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controller 62 provides a reactive gas into a reaction tube 1 during the temperature regulating process, it controls a valve 31 to stop it during the temperature changing process.

Manufacture of semiconductor device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method of manufacturing a semiconductor device and a semiconductor manufacture system

This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controller 61 controls a heater 2 so that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controller 62 provides a reactive gas into a reaction tube 1 during the temperature regulating process, it controls a valve 31 to stop it during the temperature changing process.

Vapor growth apparatus

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Patent JPH038821B2

Semiconductor device and manufacture thereof

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

SEMICONDUCTOR SWITCHING ELEMENT WITH IRREVERSIBLE BEHAVIOR AND SEMICONDUCTOR STORAGE USING THE SEMICONDUCTOR SWITCHING ELEMENT

Selective impurity diffusion method into semiconductor substrate

Equipment for vapor growth

半導体デバイス

【課題】 光デバイス材料として採用されている二―六族化合物半導体及び三―五族化合物半導体は、シリコン集積回路のデバイス特性を変化させる要因となるために、シリコン集積回路製作においては排除されるべき材料とされている。シリコン集積回路と同一基板上に光デバイスを製作・集積化し、光による情報伝送を可能とする半導体デバイスを提供する。 【解決手段】 シリコン集積回路と同一基板上に四族半導体材料を用いた発光・受光デバイスを製作し、デバイス間を光伝送路で接続することで光による情報伝送を可能とする半導体デバイスが得られる。 【選択図】 図１

薄膜製造方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

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Semiconductor device having a metal-semiconductor junction with a reduced contact resistance

A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 10 21 cm −3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n -or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.

Semiconductor device having a metal-semiconductor junction with a reduced contact resistance

A metal-semiconductor junction comprising a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 10 21 cm −3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.