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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 14. Отображено 10.
11-01-2018 дата публикации

METHOD FOR FABRICATING A HETEROJUNCTION SCHOTTKY GATE BIPOLAR TRANSISTOR

Номер: US20180013032A1
Автор: KHADER Mahmoud M., NEKOVEI Reza, RATCHA Aditya Chandra Sai, Verma Amit
Принадлежит:

Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region. 1. A method for fabricating a transistor structure , the method comprising:performing a photolithography process to transfer a device pattern onto a semiconductor substrate, wherein the semiconductor substrate comprises a drift region and a lightly-doped/undoped region, and the lightly-doped/undoped region is lightly-doped and/or undoped;doping a collector region of the substrate;doping an emitter region of the substrate;forming a heterostructure, wherein the heterostructure forms a heterojunction with the lightly-doped/undoped region;forming a collector terminal, wherein the collector terminal is in contact with the collector region;forming a gate terminal, wherein the gate terminal is in contact with the heterostructure; andforming an emitter terminal, wherein the emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.2. The method according to claim 1 , wherein the drift region comprises an N− doped region.3. The method according to claim 1 , wherein the doping the collector region comprises performing P+ doping.4. The method according to ...

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Номер записи: 1
04-04-2019 дата публикации

NICKEL CATALYST FOR DRY AND LOW TEMPERATURE STEAM REFORMING OF METHANE

Номер: US20190099744A1
Автор: Abdelmoneim Ahmed Gamal, Al-Marri Mohammed J., Ali Sardar, KHADER Mahmoud M., Salah Saad Mohammed Ali H.
Принадлежит:

This invention relates to a novel nickel catalyst and a novel one-pot solution combustion synthesis of that catalyst for the COreforming and low temperature steam reformation of methane. The novel nickel catalyst has exceptional activity for dry reforming and steam reforming of methane, and exhibits excellent resilience to deactivation due to carbon formation. 1. A catalyst composition comprising:a nickel species, andalumina, the catalyst is in form of nanoparticulate,', {'sub': 2', '4, 'claim-text': {'sub': 2', '4, 'wherein NiAlOis the main form of the nickel species;'}, 'the nickel species comprises NiAlOwith Ni, NiO, or combination of Ni and NiO;'}, 'the nickel species is dispersed on the surface and in the bulk of the alumina, wherein the nickel species has a higher concentration on the surface of the alumina than in the bulk of the alumina., 'wherein'}2. The catalyst composition of claim 1 , wherein the catalyst has a BET surface area of at least 88 m/g.3. The catalyst composition of claim 1 , wherein the catalyst has a BET surface of at least 70 claim 1 , 80 claim 1 , 90 claim 1 , 100 claim 1 , 110 claim 1 , 120 claim 1 , 130 claim 1 , 140 claim 1 , 150 claim 1 , 160 claim 1 , 170 claim 1 , 180 claim 1 , or 190 m/g.4. The catalyst composition of claim 1 , wherein the catalyst has a BET surface in the range of 70 m/g to 200 m/g.5. The catalyst composition of claim 1 , wherein the nickel specie is present in the catalyst at about 5 to about 10 wt %.6. The catalyst composition of claim 1 , wherein the nickel species is present in the catalyst at about 5 wt % claim 1 , about 6 wt % claim 1 , about 7 wt % claim 1 , about 8 wt % claim 1 , about 9 wt % claim 1 , or about 10 wt %.7. The catalyst composition of claim 1 , wherein the nickel specie is present on the surface of the alumina at 7.75-13.52 wt %.8. The catalyst composition of claim 1 , wherein the nickel specie is present on the surface of the alumina at about 6 wt % to about 15 wt %.9. The catalyst ...

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Номер записи: 2
23-06-2016 дата публикации

Photodetector cell and solar panel with dual metal contacts and related methods

Номер: US20160181453A1
Автор: Amit Verma, Mahmoud M. Khader, Manjeri P. Anantram, Md Golam Rabbani, Reza Nekovei
Принадлежит: Individual

A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by the substrate and having a second work function value different from the first work function value, and a semiconductor wire carried by the substrate and having a third work function value between the first and second work function values. The semiconductor wire may be coupled between the first and second contacts and comprising a photodiode junction.

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Номер записи: 3
13-09-2018 дата публикации

Photodetector cell and solar panel with dual metal contacts and related methods

Номер: US20180261705A1
Автор: Amit Verma, Golam Rabbani, Mahmoud M. Khader, Manjeri P. Anantram, Reza Nekovei
Принадлежит: Individual

A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by the substrate and having a second work function value different from the first work function value, and a semiconductor wire carried by the substrate and having a third work function value between the first and second work function values. The semiconductor wire may be coupled between the first and second contacts and comprising a photodiode junction.

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Номер записи: 4
09-11-2017 дата публикации

Heterojunction schottky gate bipolar transistor

Номер: US20170323994A1
Автор: Aditya Chandra Sai Ratcha, Amit Verma, Mahmoud M. Khader, Reza Nekovei
Принадлежит: Qatar University, TEXAS A&M UNIVERSITY SYSTEM

Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

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Номер записи: 5
27-12-2018 дата публикации

Palladium catalyst for oxidation of methane and method of preparation and use thereof

Номер: US20180369787A1
Автор: Ahmed Gamal ABDELMONEIM, ANAND Kumar, Mahmoud M. Khader, Mohammed J. AL-MARRI, Sardar ALI
Принадлежит: Qatar University

This invention relates to a novel palladium catalyst for the substantially complete oxidative removal of methane from exhaust streams at low operating temperatures compared to other current palladium catalysts and to methods of preparing the catalyst. Use of the catalyst to remove methane from vehicle exhaust streams, crude oil production and processing exhaust streams, petroleum refining exhaust streams and natural gas production and processing exhaust streams.

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Номер записи: 6
12-06-2018 дата публикации

Photodetector cell and solar panel with dual metal contacts and related methods

Номер: US9997656B2
Автор: Amit Verma, Mahmoud M. Khader, Manjeri P. Anantram, Md Golam Rabbani, Reza Nekovei
Принадлежит: Individual

A photodetector cell may include a substrate, and a first contact carried by the substrate and having a first work function value. The photodetector cell may include a second contact carried by the substrate and having a second work function value different from the first work function value, and a semiconductor wire carried by the substrate and having a third work function value between the first and second work function values. The semiconductor wire may be coupled between the first and second contacts and comprising a photodiode junction.

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Номер записи: 7
09-04-2024 дата публикации

Metal-silica nanocomposites prepared through a single step solution combustion synthesis (SCS)

Номер: US11951457B2
Автор: Ahmed GAMAL, Dharmesh KUMAR, Mahmoud M. Khader, Muftah EL-NAAS, Sardar ALI
Принадлежит: Qatar University

Provided herein is a novel silica-supported nickel nanocomposite and a novel one-pot solution combustion synthesis of that nanocomposite. The method allows the synthesis of small size nickel nanoparticles (e.g., 3 nm to 40 nm) for which a considerable percentage of nickel is inserted into silica, experiencing strong metal-support interaction. These exceptional physicochemical properties make them desirable for various industrial applications, such as electronic, heterogeneous catalysis as well as conversion and storage of energy.

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Номер записи: 8
06-03-2018 дата публикации

Method for fabricating a heterojunction schottky gate bipolar transistor

Номер: US09911889B2
Автор: Aditya Chandra Sai Ratcha, Amit Verma, Mahmoud M. Khader, Reza Nekovei
Принадлежит: Qatar University, TEXAS A&M UNIVERSITY SYSTEM

Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

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Номер записи: 9
17-10-2017 дата публикации

Heterojunction schottky gate bipolar transistor

Номер: US09793430B1
Автор: Aditya Chandra Sai Ratcha, Amit Verma, Mahmoud M. Khader, Reza Nekovei
Принадлежит: Qatar University, TEXAS A&M UNIVERSITY SYSTEM

Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.

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Номер записи: 10