Semiconductor storage device

A semiconductor storage device includes first to third wirings extending in a first direction and adjacent in a second direction intersecting the first direction, fourth to sixth wirings extending in the second direction and adjacent in the first direction, memory cells each having one end connected to one of the first to third wirings and the other end connected to one of the fourth to sixth wirings, a circuit configured to output a first voltage, second and third voltages higher than the first voltage, a fourth voltage higher than the second voltage and the third voltage, and a fifth voltage higher than the fourth voltage. In a write operation for memory cells connected to the first and fourth wirings, the first, fourth, second, fifth and third voltages are transferred to the first, second, third, fourth, and fifth wirings, respectively, and the third voltage is transferred to the sixth wiring.

Semiconductor device and method of manufacturing the same

A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, A METHOD OF MANUFACTURING THE SAME, AND A METHOD OF SCREENING THE SAME, CAPABLE OF STORING DATA BY USING THE RESISTANCE CHANGE OF A VARIABLE RESISTOR DEVICE

PURPOSE: A nonvolatile semiconductor memory device, a method of manufacturing the same, and a method of screening the same are provided to increase production yield of a memory device by wring/reading data in/from a memory cell which is connected to a bit line and a word line while a defective memory cell is distorted. CONSTITUTION: A nonvolatile memory comprises a memory cell array(1). A column control circuit(2) is formed in a bit line direction and is adjacent to the memory cell array. A row control circuit(3) is formed in a word line direction and is adjacent to the memory cell array. A data I/O buffer(4) is connected to an external host through an I/O wire. Addresses supplied to the data I/O buffer are transmitted to the column control circuit and the low control circuit. A command from the host applied to the data I/O buffer is transmitted to a command interface. COPYRIGHT KIPO 2011 ...

LIGHT GUIDE PLATE, ILLUMINATION DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide a light guide plate which has small loss of light and can increase illumination efficiency. SOLUTION: The light guide plate is equipped with a transparent member 20 which has a top surface 20a and a reverse surface 20b and 1st and 2nd flanks 22a and 22c extending in (x) and (y) directions crossing each other to connect with each other; and a partial area of the transparent member 20 is a light projection area S1 in which light traveling in the transparent member 20 in the (x) direction is projected out from the top surface 20a or reverse surface 20b and another partial area of the transparent member 20 is a light guide area S2 in which light entering the transparent member 20 from a light incidence surface part 24 provided on the 1st flank 22a is reflected by the 2nd flank and then guided to the light projection area S1. In the light guide area S2, a hole 26 forming a mirror surface 26a extending in the (y) direction at an interval to the 2nd flank 22c in ...

Semiconductor device and method of manufacturing the same

A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.

SEMICONDUCTOR STORAGE DEVICE

A semiconductor storage device includes first to third wirings extending in a first direction and adjacent in a second direction intersecting the first direction, fourth to sixth wirings extending in the second direction and adjacent in the first direction, memory cells each having one end connected to one of the first to third wirings and the other end connected to one of the fourth to sixth wirings, a circuit configured to output a first voltage, second and third voltages higher than the first voltage, a fourth voltage higher than the second voltage and the third voltage, and a fifth voltage higher than the fourth voltage. In a write operation for memory cells connected to the first and fourth wirings, the first, fourth, second, fifth and third voltages are transferred to the first, second, third, fourth, and fifth wirings, respectively, and the third voltage is transferred to the sixth wiring.

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To improve reverse characteristics without deteriorating forward characteristics of a diode. SOLUTION: A semiconductor memory device includes first and second memory cells each including a variable resistance element 19 and a diode D and having a pillar shape, and an insulating layer 20 provided between the first memory cell and the second memory cell and including a void 21. A central portion of the diode D has a smaller width than widths of upper and lower portions of the diode. COPYRIGHT: (C)2010,JPO&INPIT ...

Semiconductor device and method of manufacturing the same

LIGHTING SYSTEM, LIQUID CRYSTAL DISPLAY SYSTEM AND LIGHT GUIDING PLATE

PROBLEM TO BE SOLVED: To provide a lighting system capable of making illuminance distribution of lighting area more uniform than that of a usual system. SOLUTION: This lighting system B is provided with a face and a back surface 20a, 20b having an interval in a thickness direction, a light guiding plate 2 including a first and a second side surface 20e, 20f, 20c extending in a direction crossing each other and connecting, and a light source 3 entering light into the light guiding plate 2, and has a plurality of inclined surfaces 21a reflecting light traveling in the light guiding plate 2 in a direction that the first side surfaces 20e, 20f extend to enter the light from a back surface 20b of a light guiding plate 2 formed on the face surface 20a of the light guiding plate 2. A light entry surface part 24 inclining to make an cute angle to the second side surface 20c is formed on the first side surfaces 20e, 20f of the light guiding plate 2 and a light source 3 opposes to the light entry ...

Semiconductor memory device

A semiconductor memory device includes: first wirings; second wirings intersecting the first wirings; and memory cells. Each of the memory cells is respectively formed between one of the first wirings and one of the second wirings. In a set operation, a set pulse is supplied between one of the first wirings and one of the second wirings. In a reset operation, a reset pulse is supplied between one of the first wirings and one of the second wirings. In a first operation, a first pulse is supplied between one of the first wirings and one of the second wirings. the first pulse has an amplitude equal to or greater than the greater of an amplitude of the set pulse and an amplitude of the reset pulse and has a pulse width greater than a pulse width of the set pulse.

METHOD FOR PRODUCING FOOD MATERIAL RICH IN CYSTEINYLGLYCINE AND AGENT FOR IMPROVING TASTE OF FOOD

PROBLEM TO BE SOLVED: To obtain a food material rich in crysteinylglycine in response to the demand on processed foods having meat flavor according to the westerniza tion and diversification of the dietary life and to obtain an agent for improving the taste and flavor of a food rich in cysteinylglycine, having low scorch smell and chemical smell, free from the defect of conventional agents to deteriorate the taste of the food and effective for imparting the food or drink with good meat flavor, or the like. SOLUTION: The food material rich in cysteinylglycine is produced by keeping a food material containing ≥1 wt.% glutathione in solid basis at pH 1-7 and 50-120°C in the presence of water or treating the material with γ- glutamylpeptide hydrolase in the presence of water at pH 3-9 and 15-70°C. The taste improving agent for the food is produced by adding a sugar to cysteinylglycine or a food material containing ≥0.5 wt.% cysteinylglycine in solid basis and heating at 70-180°C for 10-180 ...

NEW PEPTIDE AND ANTIHYPERTENSIVE AGENT CONTAINING SAME PEPTIDE

NEW MATERIAL:A peptide expressed by formula I to formula XI and salt thereof. USE: The novel peptide has angiotensin conversion enzyme inhibiting action and is blended with a physiologically functional food or medicine as an active ingredient for antihypertensive agent. Dose or administration amount thereof is 0.01-10 mg 1-3 times daily. PREPARATION: A raw material having a reactive carboxyl group corresponding to either one of two fragments divided into two in arbitrary position of peptide bond is condensed with a raw material having a reactive amino group corresponding to other fragment using dicyclohexylcarbodiimide method according to a solid method ordinarily used in peptide synthesis and as necessary protecting group is removed to provide the novel peptide. COPYRIGHT: (C)1991,JPO&Japio ...

NEW PEPTIDE AND ANTIHYPERTENSIVE AGENT CONTAINING SAME PEPTIDE

NEW MATERIAL:A peptide expressed by formula I to formula VI and salt thereof. USE: The novel peptide has angiotensin conversion enzyme inhibiting action and is blended with a physiologically functional food or medicine as an active ingredient for antihypertensive agent. Dose and administration amount thereof is 0.01-10mg 1-3 times daily. PREPARATION: A raw material having a reactive carboxyl group corresponding to either one of two fragments divided into two in arbitrary position of peptide bond is condensed with a raw material having a reactive amino group corresponding to other fragment using dicyclohexylcarbodiimide method according to a solid method ordinarily used in peptide synthesis and as necessary protecting group is removed to provide the novel peptide. COPYRIGHT: (C)1991,JPO&Japio ...

Point light source-oriented light guiding means and lighting unit utilizing the same

A lighting unit for illuminating a liquid crystal panel includes a point light source and a light guide. The light guide includes a first side surface extending in a direction x and having a light incidence portion facing the light source, a second side surface extending in a direction y perpendicular to the direction x, a third side surface spaced from the second side surface in the direction x, and an outlet surface for exit of light. The second side face is formed with a plurality of recesses each including a slant surface for causing light emitted from the light source to be reflected toward the third side surface. The recesses progressively increase in depth as they are positioned farther from the light source.

Semiconductor device and method of manufacturing the same

A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.

NOVEL PEPTIDE AND HYPOTENSOR CONTAINING SAME

NEW MATERIAL:Peptides of formulas I-XXXII. USE:A hypotensor, PREPARATION:For example, (A) a raw material having a reactive carboxyl group corresponding to one of two kinds of fragments divided into two at an arbitrary position of peptide bond by a liquid-phase process or solid-phase process which are conventionally applied in peptide synthesis is condensed with (B) a raw material having reactive amino group and corresponding to the other fragment in the above two kinds of fragments in the presence of (C) a condensation agent such as dicyclohexylcarbodiimide. The above process is repeated to synthesize a peptide chain, the protecting group of the functional group is removed and, in the case of solid-phase process, the produced peptide is separated from the solid carrier to obtain the objective peptide.

Nonvolatile semiconductor memory device and producing method thereof

A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n3)-th (n is a positive integer) and (4n2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction.

Terminal device for circuit breaker

The present invention obtains a terminal device, even though a mounting screw for fixing a coupling terminal on a terminal conductor of a circuit breaker is relaxing, the coupling terminal can not separate from a terminal platform. The construction is as follows: a first coupling part (371) of the coupling terminal (37) is coupled directly or indirectly with a terminal conductor (4) of a circuit breaker by screw from the reverse of the circuit breaker (1) using a screw unit (93) installed on the first coupling part, also the coupling direction of the first coupling part can be changed. On a terminal platform (22) installed on the reverse of the circuit breaker, setting a clamping part (2411) clamping with the coupling terminal on the first coupling part of the coupling terminal at a prescribed position relative to a throughhole (241), by means of the conjunction of the coupling terminal (37) and the conjunction part (2411), stooping the insertion and evulsion of the coupling terminal (37 ...

Semiconductor memory device

SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF SCREENING THE SAME

A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line.

SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device includes: first wirings; second wirings intersecting the first wirings; and memory cells. Each of the memory cells is respectively formed between one of the first wirings and one of the second wirings. In a set operation, a set pulse is supplied between one of the first wirings and one of the second wirings. In a reset operation, a reset pulse is supplied between one of the first wirings and one of the second wirings. In a first operation, a first pulse is supplied between one of the first wirings and one of the second wirings. the first pulse has an amplitude equal to or greater than the greater of an amplitude of the set pulse and an amplitude of the reset pulse and has a pulse width greater than a pulse width of the set pulse. 1. A semiconductor memory device , comprising:a plurality of first wirings,a plurality of second wirings intersecting the plurality of first wirings, anda plurality of memory cells, each of the plurality of memory cells being respectively formed between one of the plurality of first wirings and one of the plurality of second wirings, and including a variable resistance layer and a nonlinear element layer including chalcogen, in a set operation, a set pulse is supplied between one of the plurality of first wirings and one of the plurality of second wirings,', 'in a reset operation, a reset pulse is supplied between one of the plurality of first wirings and one of the plurality of second wirings,', 'in a first operation, a first pulse is supplied between one of the plurality of first wirings and one of the plurality of second wirings, and', 'the first pulse has an amplitude equal to or greater than the greater of an amplitude of the set pulse and an amplitude of the reset pulse and has a pulse width greater than a pulse width of the set pulse., 'wherein the memory device is configured such that2. The semiconductor memory device according to claim 1 , further comprising a memory chip that includes the plurality of ...

Semiconductor memory device

A semiconductor memory device includes: first wirings; second wirings intersecting the first wirings; and memory cells. Each of the memory cells is respectively formed between one of the first wirings and one of the second wirings. In a set operation, a set pulse is supplied between one of the first wirings and one of the second wirings. In a reset operation, a reset pulse is supplied between one of the first wirings and one of the second wirings. In a first operation, a first pulse is supplied between one of the first wirings and one of the second wirings. the first pulse has an amplitude equal to or greater than the greater of an amplitude of the set pulse and an amplitude of the reset pulse and has a pulse width greater than a pulse width of the set pulse.

SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF SCREENING THE SAME

A semiconductor memory device includes first and second memory cells each including a variable resistance element and a diode and having a pillar shape, and an insulating layer provided between the first memory cell and the second memory cell and including a void. A central portion of the diode has a smaller width than widths of upper and lower portions of the diode.

SEPARATING APPARATUS FOR LOSS SYNTHETIC RESIN OF LEAD FRAME FOR ELECTRONIC COMPONENT

PROBLEM TO BE SOLVED: To easily separate loss synthetic resin generated at the lengthwise edge of a lead frame when the package molding of an electronic component is molded from the frame without deforming the frame by the down movement of a breaker. SOLUTION: The lower surfaces of breakers 6, 7 are formed on oblique surfaces 6c, 7c inclined obliquely upward from one end of the breakers toward the other end. COPYRIGHT: (C)1997,JPO ...

NEW PEPTIDE AND HYPOTENSOR CONTAINING THE SAME

PURPOSE: To provide a new peptide originated from food protein, having high safety, useful as a hypotensor and material for functional food and newly synthesized based on the examination result of a peptide fragment in soybean glycinin having known structure. CONSTITUTION: A protected peptide resin is synthesized by Merrifield solid-phase synthesis using a p-alkoxybenzyl alcohol as a solid phase carrier, bonding an amino acid having α-amino group protected with 9-fluorenylmethyloxycarbonyl group (Fmoc group), etc., to the solid-phase carrier from the C-terminal side according to the amino acid sequence of the peptide, removing the α-amino- protecting group from the product and successively repeating the above steps. The synthesized protected peptide resin is treated with a trifluoroacetic acid solution to eliminate the peptide chain from the resin and remove all protecting groups and obtain the objective peptide expressed by either one of the structural formulas I to XVII and its salt.

Semiconductor memory device

A semiconductor memory device according to an embodiment comprises: a semiconductor substrate which extends in first and second directions; first wiring lines which are arranged in a third direction, and which extend in the first direction; second wiring lines which are arranged in the first direction and extend in the third direction; and memory cells disposed at intersections of the first wiring lines and the second wiring lines, one of the memory cells including a first film and a second film whose permittivity is different from that of the first film which are stacked in the second direction between one of the first wiring lines and one of the second wiring lines, and the second films of two of the memory cells adjacent in the third direction being separated between the two memory cells.

Discharge lamp, discharge lamp socket, discharge lamp device, and discharge lamp lighting device

A discharge lamp is constructed by attaching a base to an outer tube, the base has a spiral feed member and a dotted feed member, and the shortest creeping clearance distance between the spiral feed member and the dotted feed member is defined to at least 6.0 mm. A socket for discharge lamp is constructed by providing a spiral receiving member and a contact piece in an insulating socket body, and the shortest clearance distance between the spiral receiving member and the contact piece is defined to at least 5.0 mm. A socket for discharge lamp is constructed by providing a spiral receiving member and a contact piece in an insulating socket body, and the shortest clearance distance between a socket reference line and the contact piece is defined to at least 19.6 mm.

FRAGRANT INGREDIENT PRECURSOR

PROBLEM TO BE SOLVED: To obtain a stable fragrant ingredient precursor, to provide a method for producing the same and to obtain a fragrant ingredient obtained from the precursor and to provide a seasoning and a food comprising the fragrant ingredient. SOLUTION: A compound represented by formula (1) or (2) (wherein, R denotes hydrogen atom or a glycoside-bound reducing sugar) of the figure is used as the fragrant ingredient precursor. The compound can be produced by reacting an Amadori compound with cysteine. The resultant fragrant ingredient precursor can be heated under acidic conditions to provide the fragrant ingredient. COPYRIGHT: (C)2006,JPO&NCIPI ...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.

BACKLIGHT LIGHT SOURCE DEVICE

【課題】透明体製の導光板２と、この導光板２の内部に光を発射する発光ダイオードチップ３とから成るバックライト光源装置において、光エネルギーの損失が少なくしてバックライトの光量を大幅に向上し、部品点数を少なくし、且つ、小型・軽量化する。 【解決手段】前記発光ダイオードチップ３を、前記導光板２における側面に沿って延びるように構成した回路基板１にマウントし、この回路基板１を、前記導光板２における側面に、当該回路基板における前記発光ダイオードチップを前記導光板の内部に埋設するように固着する。 【選択図】 図５

Nonvolatile semiconductor memory device and producing method thereof

A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n3)-th (n is a positive integer) and (4n2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction.

Semiconductor memory device

A semiconductor memory device according to an embodiment comprises: a first wiring line extending in a first direction; a second wiring line extending in a second direction, the second direction intersecting the first direction; and a memory cell disposed at an intersection of the first wiring line and the second wiring line, the memory cell including a first film whose resistance changes electrically, a second film having conductivity, and a third film having an insulating property which are stacked sequentially in a third direction that intersects the first and second directions.

SWEET PROTEIN

NEW MATERIAL:A protein having peptide chains of formulas I and II and a salt thereof. USE: A sweetener. The protein has highly strong sweetness compared with sucrose. PREPARATION: Prescribed amino acids are successively bonded to a carrier resin in the presence of a condensing agent such as dicylohexyl carbodiimide according to a solid synthetic method and the bond of the resin to the C terminal of the produced peptide is cleaved. Peptide chains of formulas I and II are synthesized by the above-mentioned method, respectively. The synthesized peptide chain of formula I is purified, dissolved in a 0.1% acetic acid solution and subsequently mixed with the synthesized and purified peptide of formula II to form a complex, which is separated and purified by a reverse phase liquid chromatography, etc. COPYRIGHT: (C)1991,JPO&Japio ...

Semiconductor storage device

A semiconductor storage device includes first to third wirings extending in a first direction and adjacent in a second direction intersecting the first direction, fourth to sixth wirings extending in the second direction and adjacent in the first direction, memory cells each having one end connected to one of the first to third wirings and the other end connected to one of the fourth to sixth wirings, a circuit configured to output a first voltage, second and third voltages higher than the first voltage, a fourth voltage higher than the second voltage and the third voltage, and a fifth voltage higher than the fourth voltage. In a write operation for memory cells connected to the first and fourth wirings, the first, fourth, second, fifth and third voltages are transferred to the first, second, third, fourth, and fifth wirings, respectively, and the third voltage is transferred to the sixth wiring.

NOVEL PEPTIDE AND HYPOTENSOR CONTAINING SAME

NEW MATERIAL:Peptides of formulas IWXXXII. USE: A hypotensor, PREPARATION: For example, (A) a raw material having a reactive carboxyl group corresponding to one of two kinds of fragments divided into two at an arbitrary position of peptide bond by a liquid-phase process or solid-phase process which are conventionally applied in peptide synthesis is condensed with (B) a raw material having reactive amino group and corresponding to the other fragment in the above two kinds of fragments in the presence of (C) a condensation agent such as dicyclohexylcarbodiimide. The above process is repeated to synthesize a peptide chain, the protecting group of the functional group is removed and, in the case of solid-phase process, the produced peptide is separated from the solid carrier to obtain the objective peptide. COPYRIGHT: (C)1989,JPO&Japio ...

SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device according to an embodiment comprises: a semiconductor substrate which extends in first and second directions; first wiring lines which are arranged in a third direction, and which extend in the first direction; second wiring lines which are arranged in the first direction and extend in the third direction; and memory cells disposed at intersections of the first wiring lines and the second wiring lines, one of the memory cells including a first film and a second film whose permittivity is different from that of the first film which are stacked in the second direction between one of the first wiring lines and one of the second wiring lines, and the second films of two of the memory cells adjacent in the third direction being separated between the two memory cells.

Semiconductor memory device, method of manufacturing the same, and method of screening the same

A semiconductor memory device includes first and second memory cells each including a variable resistance element and a diode and having a pillar shape, and an insulating layer provided between the first memory cell and the second memory cell and including a void. A central portion of the diode has a smaller width than widths of upper and lower portions of the diode.

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PRODUCING METHOD THEREOF

A cell array includes a memory cell region in which memory cells are formed and a peripheral region that is provided around the memory cell region. In the memory cell region, first lines are extended in parallel with a first direction, and the first lines are repeatedly formed at first intervals in a second direction orthogonal to the first direction. In the peripheral region, each of the first lines located at (4n3)-th (n is a positive integer) and (4n2)-th positions in the second direction from a predetermined position has a contact connecting portion on one end side in the first direction of the first line. In the peripheral region, each of the first lines located at (4n1)-th and 4n-th positions in the second direction from the predetermined position has the contact connecting portion on the other end side in the first direction of the first line. The contact connecting portion is formed so as to contact a contact plug extended in a laminating direction.

NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage apparatus capable of increasing the current density of a variable resistance element and reducing power consumption of an entire memory cell, and to provide a method of manufacturing the nonvolatile semiconductor apparatus. SOLUTION: The nonvolatile semiconductor storage apparatus has: a plurality of pieces of first wiring WL; a plurality of pieces of second wiring BL crossing the plurality of pieces of first wiring WL; the variable resistance element VR that is connected between both the pieces of wiring at the crossing section of the pieces of first and second wiring WL, BL and stores information according to a change in the value of resistance; and a memory cell including a non-ohmic element NO. A columnar memory cell, where the non-ohmic element NO, the variable resistance element VR, and an electrode EL are arranged in this order from the side of the word line WL to the side of the bit line BL, is tapered by gradually ...

NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS AND METHOD OF MANUFACTURING THE SAME

A nonvolatile semiconductor storage apparatus includes: a plurality of first wirings; a plurality of second wirings which cross the plurality of first wirings; and a memory cell which is connected between both the wirings at an intersection of the first and second wirings, and includes a variable resistive element operative to store information according to a change in resistance and includes a variable resistive element, wherein the memory cell is formed so that a cross section area of the variable resistive element becomes smaller than a cross section area of the other portion.

Semiconductor memory device, method of manufacturing the same, and method of screening the same

A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line.

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR SCREENING THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which is not influenced by a defective memory cell even if micro-fabrication develops, and provides a high yield. SOLUTION: A memory cell is provided with: a variable resistance film functioning as a variable resistance element; a first conductive film coming into contact with one face of the variable resistance film; a second conductive film coming into contact with the other face of the variable resistance film; and a rectifier element layer formed so as to come into contact with a lower face of the second conductive film and functioning as a rectifier element. A width of the first conductive film or the second conductive film is smaller than a width of the variable resistance film. COPYRIGHT: (C)2011,JPO&INPIT ...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD OF MANUFACTURING THE SAME

【課題】占有面積を縮小化した不揮発性半導体記憶装置、及びその製造方法を提供する。 【解決手段】不揮発性半導体記憶装置は、第１メタル２７、第１メタル２７と交差する第２メタル３６、第１メタル２７及び第２メタル３６の交差部でそれらの間に接続されたメモリセルＭＣを有する単位セルアレイＭＡＴを備える。周辺領域Ａｒ２において、所定位置からカラム方向の（４ｍ−３）番目（ｍは正の整数）及び（４ｍ−２）番目に位置する第１メタル２７は、そのロウ方向の一端側にコンタクト接続部２７ｂを有する。周辺領域において、所定位置からカラム方向の（４ｍ−１）番目及び４ｍ番目に位置する第１メタル２７は、そのロウ方向の他端側にコンタクト接続部２７ａを有する。 【選択図】図６Ｂ

NOVEL PEPTIDE AND HYPOTENSOR CONTAINING THE PEPTIDE

NEW MATERIAL:28 Kinds of peptides expressed by formulas I-XIV. USE: A hypotensor. It has high pharmacological activity, mild action and low side effect. PREPARATION: The objective peptide can be prepared by condensing (A) a raw material having a reactive carboxyl group and corresponding to one of the two fragments divided at an arbitrary position of peptide bonds and (B) a raw material having a reactive amino group and corresponding to the other fragment by dicyclohexyl-carbodiimide process which is a conventional solid- phase process for peptide synthesis and, as necessary, removing the protecting group from the product. The peptide has been obtained by the investigation of a peptide fragment in human β-casein having known structure. COPYRIGHT: (C)1990,JPO&Japio ...

NOVEL PEPTIDE AND HYPOTENSIVE AGENT CONTAINING SAID PEPTIDE

NEW MATERIAL:A peptide (salt) expressed by formulas IWXIII. USE: A hypotensive agent. PREPARATION: For example, proline having the amino group protected with 9-fluorenylmethoxycarbonyl group is bound to a p-alkoxybenzyl alcohol resin in the presence of a condensing agent to remove the protecting group. Amino acids having protected α-amino group and functional group in the side chain are linked in the presence of a condensing agent according to the amino acid sequence of a peptide and the α-amino protecting group is removed. The above- mentioned operation is repeated to synthesize a peptide chain. The resin having the two peptide chains linked thereto is subsequently suspended in a solvent and treated with trifluoroacetic acid to eliminate the peptide from the resin. After removing all the protecting groups, the peptide is purified by ion exchange chromatography, reversed phase liquid chromatography, etc., to afford the aimed peptide expressed by the formula. COPYRIGHT: (C)1989,JPO&Japio ...

METHOD FOR PRODUCING FOOD MATERIAL HAVING HIGH CYSTEINE CONTENT

PROBLEM TO BE SOLVED: To obtain a food material rich in cysteine from a natural source in contrast with conventional method comprising protein-decomposition method or semi-synthetic method. SOLUTION: The objective new method for the production of a food material rich in cysteine from a food material containing ≥1 wt.% glutathione in solid basis is characterized by the thermal hydrolysis of a bond between the glutamic acid residue and the cysteine residue of the glutathione in hydrated state or the hydrolysis with γ-glutamylpeptide hydrolase followed by the hydrolysis of the bond between the cysteine residue and the glycine residue with a peptidase. COPYRIGHT: (C)2001,JPO ...

Terminal device for circuit breaker

LIGHTING SYSTEM AND LIQUID CRYSTAL DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide a lighting system making illumination in a light irradiated object region more uniform than the conventional one. SOLUTION: This lighting system B is constituted such that a light guide plate 2 and a light source 3 are installed, light emitted from the light source 2 enters the light guide plate 2 from a light incoming surface part 24 of the light guide plate 2, reflected with wall surfaces 25a, 25b of a plurality of recesses 25 installed on a second side surface 22c, travels toward a third side surface, and goes out to the outside of a light outgoing surface 29 of the light guide plate 2. A plurality of recesses 25 are formed so as to become deep with becoming distant from the light source 3. Preferably, the wall surface 25a or the wall surface 25b of a plurality of recesses 25 has an angle of inclination of an acute angle becoming larger in the y direction with being distant from the light source 3. COPYRIGHT: (C)2003,JPO ...

Driving device of sewing machine

The utility model relates to a driving device of a sewing machine. The driving device can determine operation amount of a pedal and therefore the driving device can driving a sewing machine steadily. The driving device comprises a rod, a magnetic body, a Hall element and an amplifier. The rod can rotate according to operation of a pedal within a defined range. The magnetic body is fixed on the rod and moves along rotation of the rod. The Hall element detects the magnetic field of the magnetic body. The Hall element is opposite to the magnetic body in a different position on a plane through which the magnetic body passes along rotation of the rod. The amplifier outputs a signal used for driving the sew machine based on the magnetic field detected by the Hall element in a direction vertical to the plane. When the rod rotates in the defined range, the magnetic body and the Hall element are observed in the direction vertical to the plane and the relative position of the Hall element with the ...

METHOD FOR PRODUCTION OF AMINO ACID, AND PURIFIED AMINO ACID

PROBLEM TO BE SOLVED: To provide a simple method for purification of amino acid eliminating substance presenting foreign smell and foreign taste by treating with an inexpensive oxidizing agent, and to provide amino acids excluding substance presenting foreign smell and foreign taste obtained by the method. SOLUTION: The invention relates to the method for producing amino acids free from substance presenting foreign smell and foreign taste, comprising an oxidizing treatment of crude amino acids containing substance presenting foreign smell and foreign taste as impurities, and the amino acids excluding the substance presenting foreign smell and foreign taste produced by the method. COPYRIGHT: (C)2006,JPO&NCIPI ...

SWEET PROTEIN

NEW MATERIAL:A protein containing an A chain of formula I and a B chain of formula II. USE: A sweetener. PREPARATION: For example, an amino acid having an α-amino group protected with a floren-9-ylmethoxycarbonyl group is conjugated to the C-terminal side of a peptide using a carrier comprising p-methoxybenzylalcohol resin by a solid phase synthetic method, followed by removing the α-amino group protecting group. The operation is repeated according to the sequence of the peptide to synthetic the peptide resin, and the finally prepared peptides are separated from the resin and the protecting groups are removed to provide an A and B chains of formulas I and II, respectively. The A chain is dissolved in 0.1% acetic acid, mixed with the B chain, allowed to stand for 24hr at the room temperature and subsequently purified by a high performance liquid chromatography to provide a protein (monellin) containing the chains A and B. COPYRIGHT: (C)1991,JPO&Japio ...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; 1a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film;a first conductive body contacting the stacked body to extend in a stacking direction;a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films,the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films; anda second insulating film configured from a material different from that of the first insulating film, disposed on the one of the first conductive films of the stacked body, and disposed in the same layer as the projecting part of the first conductive body.. A semiconductor device, comprising: The present application is a continuation application of U.S. application Ser. No. 15/074,338, filed on Mar 18, 2016, which is based upon and claims the benefit of priority from the prior U.S. Provisional Application 62/301,903, filed on Mar. 1, 2016, the entire contents of both of which are incorporated herein by reference.Embodiments of the present invention relate to a semiconductor device and a method of manufacturing the same.A flash memory is a semiconductor device known for its low cost and large capacity. One example of a semiconductor device to replace the flash memory is a variable resistance type memory (ReRAM: Resistance RAM) which employs a variable resistance film in its memory cell. The ReRAM can configure a cross-point type memory cell array, hence can achieve an increased capacity similarly to the flash memory. Moreover, in order to further increase capacity, there is also being ...

不揮発性半導体記憶装置

【課題】書換え不能な記憶領域を有する不揮発性半導体記憶装置を提供する。 【解決手段】不揮発性記憶装置は、平行に配置された複数本の第１の配線、これら第１の配線と交差する平行に配置された複数本の第２の配線、及び第１の配線及び第２の配線の間に接続されたメモリセルを有するメモリセルアレイと、メモリセルアレイにおける所定のメモリセルと接続され、書込み禁止動作によって所定のメモリセルへの書き込みを不可逆的に不可能にするセキュリティー回路とを備える。 【選択図】図７

Liquid crystal display with lighting unit for uniform irradiation of liquid crystal panel

A lighting unit for a liquid crystal panel includes a light guide plate and a light source to emit light into the light guide plate. The light guide plate includes an obverse and a reverse surfaces spaced in a thickness direction. The light guide plate further includes a pair of first side surfaces extending in parallel between the obverse and the reverse surfaces, and a second side surface extending transversely of the first side surfaces. The obverse surface of the light guide plate is formed with a plurality of inclined surfaces for causing the light rays travelling within the light guide plate longitudinally to be reflected towards the reverse surface. Each of the first side surfaces of the light guide plate includes a light-inlet portion inclining at an acute angle to the second side surface. The light source is disposed to face the light-inlet portion.