COMPLEX FILM HAVING ELECTRO-CHROMIC MIRROR FUNCTION AND ANTI-REFELECTIVE FUNCTION, DISPLAY COMPROMISING THE COMPLEX FILM, AND METHODS OF MANUFACTURING THE COMPLEX FILM AND DISPLAY

Complex films having an electro-chromic mirror and an anti-reflective film, displays that include the complex films, and methods of manufacturing the complex films and the displays, include an electro-chromic mirror including a plurality of electro-chromic material layers, and an anti-reflective film including a plurality of anti-reflective material layers, wherein at least some of the plurality of anti-reflective material layers are between an uppermost layer and a lowermost layer of the plurality of electro-chromic material layers. 1. A complex film , comprising:an electro-chromic mirror including a plurality of electro-chromic material layers; andan anti-reflective film including a plurality of anti-reflective material layers,wherein at least some of the plurality of anti-reflective material layers are between an uppermost layer and a lowermost layer of the plurality of electro-chromic material layers.2. The complex film of claim 1 , wherein others of the plurality of anti-reflective material layers are on the uppermost layer of the plurality of electro-chromic material layers.3. The complex film of claim 1 , wherein all of the plurality of anti-reflective material layers are between the uppermost layer and the lowermost layer of the plurality of electro-chromic material layers.4. The complex film of claim 1 , wherein the electro-chromic mirror further includes claim 1 ,a base substrate;a transparent electrode on the base substrate;an ion storage film on the transparent electrode;an electrolyte film on the ion storage film;a catalyst layer on the electrolyte film;an active film on the catalyst layer;a first layer of the plurality of anti-reflective material layers between the base substrate and the transparent electrode;a second layer of the plurality of anti-reflective material layers between the ion storage film and the electrolyte film; anda third layer of the plurality of anti-reflective material layers between the catalyst layer and the active film.5. The ...

ELECTRO-CHROMIC PANEL CAPABLE OF SELECTIVELY MAKING TRANSPARENT AREA AND REFLECTIVE AREA AND METHOD OF OPERATING THE SAME, AND DISPLAY APPARATUS INCLUDING THE SAME AND METHOD OF OPERATING DISPLAY APPARATUS

An electro-chromic panel includes a detection layer, and an electro-chromic layer configured to switch an operational mode of a selected area according to a signal provided from the detection layer. A method of operating an electro-chromic panel includes detecting a first signal provided to a detection layer, and switching an operational mode of a first area of an electro-chromic layer according to the first signal provided from the detection layer. 1. An electro-chromic panel comprising:a detection layer; andan electro-chromic layer configured to switch an operational mode of a selected area according to a signal provided from the detection layer.2. The electro-chromic panel of claim 1 , wherein the detection layer includes a sensor configured to detect an externally provided signal.3. The electro-chromic panel of claim 1 , wherein the electro-chromic layer includes an array layer that is actively operated.4. The electro-chromic panel of claim 3 , wherein the array layer includesa transparent electrode, anda switching element connected to the transparent electrode.5. The electro-chromic panel of claim 3 , wherein the electro-chromic layer further comprises an ion storage layer claim 3 , an electrolyte layer claim 3 , a catalyst layer claim 3 , and an active layer sequentially stacked on the array layer.6. A method of operating an electro-chromic panel claim 3 , the method comprising:detecting a first signal provided to a detection layer; andswitching an operational mode of a first area of an electro-chromic layer according to the first signal provided from the detection layer.7. The method of claim 6 , wherein the detecting detects a first touch signal provided to the detection layer.8. The method of claim 6 , wherein the detecting detects an optical signal provided to the detection layer.9. The method of claim 6 , wherein the switching comprises:analyzing the first signal provided from the detection layer;selecting the first area to be mode switched from the ...

Pattern structure for preventing visibility of moiré and display apparatus using the pattern structure

Provided are a pattern structure for preventing a moiré pattern from becoming visible, and a display apparatus using the same. The pattern structure includes a first element pattern including a plurality of first elements arranged regularly at a first pitch; a second element pattern including a plurality of second elements arranged regularly at a second pitch, the second element pattern being provided on the first element pattern; and a filling layer configured to fill gaps among the plurality of second elements, between adjacent ones thereof. A difference between transmittances of the second element and the filling layer is about 5% or less and thus, a moiré pattern occurring due to the overlapping of the first element pattern and the second element pattern may be prevented from becoming visible.

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

Chalcogen compound and semiconductor device including the same

Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

Image sensor and method of manufacturing the same

Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.

Electro-chromic panel capable of selectively making transparent area and reflective area and method of operating the same, and display apparatus including the same and method of operating display apparatus

An electro-chromic panel includes a detection layer, and an electro-chromic layer configured to switch an operational mode of a selected area according to a signal provided from the detection layer. A method of operating an electro-chromic panel includes detecting a first signal provided to a detection layer, and switching an operational mode of a first area of an electro-chromic layer according to the first signal provided from the detection layer.

Switching device and memory device including the same

Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.

Resistive memory device

A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.

Chalcogen compound and semiconductor device including the same

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device

A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at% and less than or equal to about 30 at%, the content of the As may be greater than about 30 at% and less than or equal to about 50 at%, the content of Se is greater than about 20 at% and less than or equal to about 60 at%, the content of S is greater than about 0.5 at% and less than or equal to about 10 at%, and the content of the group III metal may be in the range of 0.5 at% to 10 at%.

Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same

A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

Chalcogen compound and semiconductor device including the same

Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

Chalcogenide material, device and memory device including the same

Provided are a chalcogenide material, and a device and a memory device each including the same. The chalcogenide material may include: germanium (Ge) as a first component; arsenic (As) as a second component; at least one element selected from selenium (Se) and tellurium (Te) as a third component; and at least one element selected from the elements of Groups 2, 16, and 17 of the periodic table as a fourth component, wherein a content of the first component may be from 5 at % to 30 at %, a content of the second component may be from 20 at % to 40 at %, a content of the third component may be from 25 at % to 75 at %, and a content of the fourth component may be from 0.5 at % to 5 at %.

Chalcogenide material, switching device including the chalcogenide material, and memory device including the switching device

A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.

Memory device and memory apparatus comprising the same

Disclosed are a memory device and a memory apparatus including the memory device. The memory device may include a first electrode, a second electrode spaced apart from the first electrode, an intermediate layer between the first electrode and the second electrode, and an interface layer in contact with the intermediate layer. The intermediate layer and the interface layer each may have ovonic threshold switching (OTS) characteristics. A material of the interface layer may have a threshold voltage shift greater than a threshold voltage shift (△ Vth) of the intermediate layer.

Memory device including switching material and phase change material

A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.

Memory device and memory apparatus comprising the same

Disclosed are a memory device and a memory apparatus including the memory device. The memory device may include a first electrode, a second electrode spaced apart from the first electrode, an intermediate layer between the first electrode and the second electrode, and an interface layer in contact with the intermediate layer. The intermediate layer and the interface layer each may have ovonic threshold switching (OTS) characteristics. A material of the interface layer may have a threshold voltage shift greater than a threshold voltage shift (A Vth) of the intermediate layer.

Chalcogen compound and semiconductor device including the same

Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

Image sensor and method of manufacturing the same

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

Self-selecting memory device having polarity dependent threshold voltage shift characteristics and memory apparatus including the same

Provided are a self-selecting memory device having polarity dependent threshold voltage shift characteristics and/or a memory apparatus including the self-selecting memory device. The memory device includes a first electrode, a second electrode apart from and facing the first electrode, and a memory layer between the first electrode and the second electrode. The memory layer has Ovonic threshold switching characteristics and is configured to have a threshold voltage of the memory layer be changed as a density of active traps in the memory layer is changed, the threshold voltage changing according to the polarity and the intensity of a bias voltage applied to the memory layer. Furthermore, an element composition distribution is configured to be maintained constant in the memory layer in response to the threshold voltage of the memory layer changing.