24-09-1991 дата публикации
Номер: US5051242A
A coil for use in growing a single crystal by using a floating zone method is formed as an annular single-turn coil having a wedge-like configuration in vertical section so as to progressively increase in thickness from inner circumference to outer circumference of the coil. The surface of the annular body of the coil positioned on the polycrystalline side is radially sloped upward, around the circumferences, with an elevation angle with respect to a plane perpendicular to the crystal growth axis. The coil has an annular thin projection, which projects upwardly from the coil on the polycrystalline side, is planted at or near the inner circumference thereof. The annular thin projection serves to increase magnetic flux density around its tip portion, thereby enabling polycrystalline portion near the tip portion to be easily melted so that the polycrystalline portion positioned above the annular projection forms a slight recess which is configured so as to overhang slightly downward near the edge and cover a substantial portion of the top side of the coil. Accordingly, dissipation of heat is suppressed and generation of an icicle-like projection prevented.
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