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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 25. Отображено 22.
02-04-2015 дата публикации

BLANKMASK AND PHOTOMASK

Номер: US20150093689A1
Автор: Kee-Soo NAM, Geung-Won KANG, Cheol SHIN, Jong-Hwa LEE, Chul-Kyu YANG, Chang-Jun KIM, See-Jun JEONG, Kyu-Jin JANG, NAM KEE-SOO, KANG GEUNG-WON, SHIN CHEOL, LEE JONG-HWA, YANG CHUL-KYU, KIM CHANG-JUN, JEONG SEE-JUN, JANG KYU-JIN
Принадлежит:

Provided is a photomask having a high-resolution pattern of a half-pitch of 32 nm or less (particularly, a half-pitch of 22 nm or less), which is manufactured by forming a blankmask in which a light-proof film and a hard film having a small thickness and high etch selectivity with respect to the light-proof film are formed on a transparent substrate. The photomask may have a high quality by adjusting a composition ratio of a metal, silicon (Si), and light elements that constitute the light-proof film to suppress damage to the pattern caused by an XeFgas in an electron-beam repair process. 1. A blankmask which comprises a light-proof film and a hard film formed on a transparent substrate , wherein a degree to which the light-proof film is damaged by an injected gas in a repair process after a pattern is formed is digitized in an anisotropic ratio of 0 to 0.5 , wherein the anisotropic ratio is a ratio of a lateral damage to an etched depth of the pattern.2. The blankmask of claim 1 , wherein the light-proof film is formed of a molybdenum silicide (MoSi) compound selected from the group consisting of MoSi claim 1 , MoSiO claim 1 , MoSiN claim 1 , MoSiC claim 1 , MoSiON claim 1 , MoSiCN claim 1 , MoSiOC claim 1 , MoSiCON claim 1 , MoSiB claim 1 , MoSiBO claim 1 , MoSiBN claim 1 , MoSiBC claim 1 , MoSiBON claim 1 , MoSiBCN claim 1 , MoSiBOC claim 1 , and MoSiBCON.3. The blankmask of claim 2 , wherein the light-proof film has a composition ratio in which a content of molybdenum (Mo) is 1 at % to 15 at % claim 2 , a content of silicon (Si) is 40 at % to 80 at % claim 2 , a content of nitrogen (N) is 15 at % to 35 at % claim 2 , a content of boron (B) is 0 to 5 at % claim 2 , a content of carbon (C) is 0 to 5 at % claim 2 , and a content of oxygen (O) is 0 to 5 at %.4. The blankmask of claim 2 , wherein the light-proof film is formed using a molybdenum silicide (MoSi) target or a molybdenum silicide boron (MoSiB) target claim 2 ,wherein the molybdenum silicide (MoSi) target ...

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Номер записи: 1
06-10-2016 дата публикации

PHASE SHIFT BLANKMASK AND PHOTOMASK

Номер: US20160291451A1
Автор: Kee-Soo NAM, Cheol SHIN, Jong-Hwa LEE, Chul-Kyu YANG, Min-Ki CHOI, Chang-Jun KIM, Kyu-Jin JANG, NAM KEE-SOO, SHIN CHEOL, LEE JONG-HWA, YANG CHUL-KYU, CHOI MIN-KI, KIM CHANG-JUN, JANG KYU-JIN, NAM Kee-Soo, SHIN Cheol, LEE Jong-Hwa, YANG Chul-Kyu, CHOI Min-Ki, KIM Chang-Jun, JANG Kyu-Jin
Принадлежит: S&S TECH Co., Ltd.

Disclosed is a phase-shift blankmask for manufacturing a photomask, which can achieve a fine pattern of not greater than 32 nm, preferably not greater than 14 nm, and more preferably not greater than 10 nm. 1. A phase-shift blankmask provided with a phase-shift film and a light-shielding film on a transparent substrate ,the light-shielding film comprising multi-layered films of two or more layers containing at least one of oxygen (O) and nitrogen (N), wherein at least one of the films essentially contains oxygen (O),the film essentially containing oxygen (O) occupying 50% to 95% of the whole thickness of the light-shielding film.2. The phase-shift blankmask according to claim 1 , wherein the phase-shift film comprises one of a single-layered structure claim 1 , a multi-layered structure of two or more layers claim 1 , and a continuous film structure claim 1 , andif the phase-shift film has the multi-layered structure or the continuous film structure, an uppermost part essentially contains oxygen (O).3. The phase-shift blankmask according to claim 1 , wherein the phase-shift film has a transmissivity of 10% to 50% with respect to exposure light having a wavelength of 193 nm or 248 nm.4. The phase-shift blankmask according to claim 1 , wherein the phase-shift film and the light-shielding film comprises one or more substances among silicon (Si) claim 1 , molybdenum (Mo) claim 1 , tantalum (Ta) claim 1 , vanadium (V) claim 1 , cobalt (Co) claim 1 , nickel (Ni) claim 1 , zirconium (Zr) claim 1 , niobium (Nb) claim 1 , palladium (Pd) claim 1 , zinc (Zn) claim 1 , chromium (Cr) claim 1 , aluminum (Al) claim 1 , manganese (Mn) claim 1 , cadmium (Cd) claim 1 , magnesium (Mg) claim 1 , lithium (Li) claim 1 , selenium (Se) claim 1 , copper (Cu) claim 1 , hafnium (Hf) and tungsten (W) claim 1 , or comprises one or more substances among nitrogen (N) claim 1 , oxygen (O) claim 1 , carbon (C) claim 1 , boron (B) and hydrogen (H) in addition to that substance.5. The phase-shift ...

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Номер записи: 2
25-02-2016 дата публикации

PHASE-SHIFT BLANKMASK AND PHOTOMASK

Номер: US20160054650A1
Автор: Kee-Soo NAM, Cheol SHIN, Chul-Kyu YANG, Jong-Hwa LEE, Min-Ki CHOI, Chang-Jun KIM, Kyu-Jin JANG
Принадлежит: S&S TECH Co., Ltd.

Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (Å) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern. 1. A phase-shift blankmask , in which a phase-shift film and a light-shielding film are formed on a transparent substrate ,the light-shielding film comprising a metal compound and having one structure between a multi-layer film and a continuous film, which comprises a first light-shielding layer formed adjacent to the transparent substrate, and a second light-shielding layer formed on the first light-shielding layer,wherein the second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (Å) than the first light-shielding layer.2. The phase-shift blankmask according to claim 1 , wherein the first light-shielding layer occupies 50% to 95% of the whole thickness of the light-shielding film.3. The phase-shift blankmask according to claim 1 , wherein the first and second light-shielding layers are different in a composition ratio from each other while having the same composition of materials claim 1 , or different in the composition of materials claim 1 , andthe first light-shielding layer is more quickly etched in the same etching material than the second light-shielding layer.4. The phase-shift blankmask according to claim 1 , whereinthe first light-shielding layer comprises one selected from a group consisting of CrO, CrON, CrCO and CrCON, andthe second light-shielding layer comprises one ...

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Номер записи: 3
24-09-2015 дата публикации

BLANKMASK AND PHOTOMASK USING THE SAME

Номер: US20150268552A1
Автор: Kee-Soo NAM, Chul-Kyu YANG, Geung-Won KANG, Cheol SHIN, Jong-Hwa LEE, Min-Ki CHOI, Chang-Jun KIM, Kyu-Jin JANG
Принадлежит: S&S Tech Co Ltd

A blankmask and a photomask using the same are provided. The blankmask can be useful in preventing the loss in thickness of lateral, top and bottom surfaces of a pattern of a light shielding film or a phase shifting film after the manufacture of the photomask by forming protective film, which has an etch selectivity with respect to a pattern of a hard film or the light shielding film, on the light shielding film or the phase shifting film so that the loss of the phase shifting film formed under the light shielding film or the phase shifting film can be prevented when a process of removing the light shielding film disposed under the hard film or a pattern of the light shielding film is performed during a washing process and a process of removing a pattern of the hard film in a method of manufacturing a photomask, thereby securing uniformity in thickness.

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Номер записи: 4
02-01-2014 дата публикации

BLANKMASK AND METHOD FOR FABRICATING PHOTOMASK USING THE SAME

Номер: US20140004449A1
Автор: Kee-Soo NAM, Geung-Won KANG, Chul-Kyu YANG, Jong-Hwa LEE, Kyu-Jin JANG, NAM KEE-SOO, KANG GEUNG-WON, YANG CHUL-KYU, LEE JONG-HWA, JANG KYU-JIN
Принадлежит: S&S Tech Co Ltd

Provided is a blankmask with a light-shielding layer including a light block layer and an anti-reflective layer, and a hard mask film. The light block layer and the anti-reflective layer are formed by combining a layer formed of a MoSi compound and a layer formed of a MoTaSi compound. Thus, the blankmask enables formation of a pattern of 32 nm or less, since the light-shielding layer can be thinly formed to a thickness of 200 to 700 and a photomask having pattern fidelity corresponding to the resolution of the pattern can be formed. The light-shielding layer has an optical density of 2.0 to 4.0 at an exposure wavelength of 193 nm, chemical resistance, and a sufficient process margin for defect repair. Further, the hard mask film is formed to a thickness of 20 to 50 using a compound including tin (Sn) and chromium (Cr), thereby decreasing an etch rate of the hard mask film. Accordingly, a resist film can be formed as a thin film, thereby manufacturing a high-resolution blankmask.

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Номер записи: 5
30-01-2020 дата публикации

Semiconductor devices

Номер: US20200035842A1
Автор: Dong-Soo Lee, Jae-Jung Kim, Jin-Kyu Jang, Sang-Jin Hyun, Sang-Yong Kim, Won-keun CHUNG
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

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Номер записи: 6
21-03-2019 дата публикации

SEMICONDUCTOR DEVICES

Номер: US20190088798A1
Автор: CHUNG Won-Keun, Hyun Sang-Jin, JANG Jin-Kyu, Kim Jae-Jung, KIM Sang-yong, LEE Dong-soo
Принадлежит:

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern. 1. A semiconductor device , comprising: first channels on a substrate, the first channels being spaced apart from each other in a vertical direction on an upper surface of the substrate;', 'first source/drain layers on the substrate, the first source/drain layers being connected to respective opposite sidewalls of the first channels; and', 'a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked from a surface of each of the first channels; and, 'a first transistor having a first threshold voltage, the first transistor including second channels on the substrate, the second channels being spaced apart from each other in the vertical direction on the upper surface of the substrate;', 'second source/drain layers on the substrate, the second source/drain layers being connected to respective opposite sidewalls of the second channels; and ...

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Номер записи: 7
23-06-2016 дата публикации

Semiconductor devices and methods for fabricating the same

Номер: US20160181412A1
Автор: Hoon-joo Na, Jin-Kyu Jang, Oh-seong Kwon, Sang-Jin Hyun, Wan-Don Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided are a semiconductor device configured to block a physical diffusion path by forming an oxide layer between barrier layers to prevent impurities from being diffused through the physical diffusion path between the barrier layers, and a method for fabricating the semiconductor device. The semiconductor device includes a gate insulation layer formed on a substrate, a first barrier layer formed on the gate insulation layer, an oxide layer formed on the first barrier layer, the oxide layer including an oxide formed by oxidizing a material included in the first barrier layer, a second barrier layer formed on the oxide layer, a gate electrode formed on the second barrier layer, and source/drains disposed at opposite sides of the gate electrode in the substrate.

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Номер записи: 8
03-11-2022 дата публикации

SEMICONDUCTOR DEVICES

Номер: US20220352389A1
Автор: CHUNG Won-Keun, Hyun Sang-Jin, JANG Jin-Kyu, Kim Jae-Jung, KIM Sang-yong, LEE Dong-soo
Принадлежит:

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern. 1. A method of manufacturing a semiconductor device , the method comprising:forming first channels and second channels on first and second regions, respectively, of a substrate, the first channels being spaced apart from each other in a vertical direction on the substrate, the vertical direction being perpendicular to an upper surface of the substrate, and the second channels being spaced apart from each other in the vertical direction on the substrate;forming first source/drain layers and second source/drain layers on the first and second regions, respectively, of the substrate, the first source/drain layers being connected to respective opposite sidewalls of the first channels, and the second source/drain layers being connected to respective opposite sidewalls of the second channels; andforming a first gate structure and a second gate structure to surround the first and second channels, respectively, on the substrate, the first gate structure including a first gate insulation ...

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Номер записи: 9
05-01-2016 дата публикации

Blankmask and method for fabricating photomask using the same

Номер: US9229317B2
Автор: Chul-Kyu Yang, Geung-Won Kang, Jong-Hwa Lee, Kee-Soo Nam, Kyu-Jin JANG
Принадлежит: S&S Tech Co Ltd

Provided is a blankmask with a light-shielding layer including a light block layer and an anti-reflective layer, and a hard mask film. The light block layer and the anti-reflective layer are formed by combining a layer formed of a MoSi compound and a layer formed of a MoTaSi compound. Thus, the blankmask enables formation of a pattern of 32 nm or less, since the light-shielding layer can be thinly formed to a thickness of 200 to 700 and a photomask having pattern fidelity corresponding to the resolution of the pattern can be formed. The light-shielding layer has an optical density of 2.0 to 4.0 at an exposure wavelength of 193 nm, chemical resistance, and a sufficient process margin for defect repair. Further, the hard mask film is formed to a thickness of 20 to 50 using a compound including tin (Sn) and chromium (Cr), thereby decreasing an etch rate of the hard mask film. Accordingly, a resist film can be formed as a thin film, thereby manufacturing a high-resolution blankmask.

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Номер записи: 10
16-04-2015 дата публикации

Blankmask and photomask

Номер: TW201514610A
Автор: Chang-Jun Kim, Cheol Shin, Chul-Kyu Yang, Geung-Won Kang, Jong-Hwa Lee, Kee-Soo Nam, Kyu-Jin JANG, See-Jun Jeong
Принадлежит: S&S Tech Co Ltd

本發明提供具有半節距為32奈米或小於32奈米(尤其半節距為22奈米或小於22奈米)的高解析度圖案的光罩，其通過形成空白罩幕來製造，在所述空白罩幕中，在透明基底上形成不透光膜和相對於所述不透光膜厚度較小並且蝕刻選擇性較高的硬膜。光罩可以通過調節構成不透光膜的金屬、矽以及少量元素的組成比率而具有較高品質，以抑制在電子束修復製程期間二氟化氙氣體對圖案的破壞。

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Номер записи: 11
20-05-2021 дата публикации

Semiconductor devices

Номер: US20210151610A1
Автор: Dong-Soo Lee, Jae-Jung Kim, Jin-Kyu Jang, Sang-Jin Hyun, Sang-Yong Kim, Won-keun CHUNG
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

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Номер записи: 12
23-11-2023 дата публикации

Semiconductor device

Номер: US20230378263A1
Автор: Byoung Hoon Lee, Chan Hyeong LEE, Jin Kyu JANG, Nam Gyu Cho
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor device includes an active pattern; gate spacers on the active pattern defining a gate trench; a gate insulating layer along a sidewall and a bottom surface of the gate trench; a first conductive layer on the gate insulating layer; a second conductive layer on the first conductive layer in the gate trench; a third conductive layer on the second conductive layer in the gate trench and including a first portion between parts of the second conductive layer, and a second portion on the first portion and in contact with an upper surface of the second conductive layer; and a capping pattern on the second and third conductive layers and including a portion between the gate insulating layer and the second portion, and in contact with a sidewall of the second portion, wherein a width of the second portion is greater than a width of the first portion.

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Номер записи: 13
22-10-2015 дата публикации

ブランクマスク及びこれを用いるフォトマスク

Номер: JP2015184672A
Автор: ▲ちょる▼ 圭 梁, ▲ちょる▼ 圭 梁, ▲ちょる▼ 申, ▲みん▼ 箕 崔, ▲みん▼ 箕 崔, Cheol Shin, Geung-Won Kang, Jong Hwa Lee, Kee Soo Nam, Kyu-Jin JANG, Min-Ki CHOI, Shoshun Kin, Zhe Gui Liang, 亘 遠 姜, 亘 遠 姜, 圭 珍 張, 圭 珍 張, 基 守 南, 基 守 南, 昌 俊 金, 昌 俊 金, 李　鍾　華
Принадлежит: SANDOS TECH CO Ltd

【課題】 ブランクマスク及びこれを用いるフォトマスクを提供する。【解決手段】 フォトマスクの製造工程のうち洗浄工程及びハードフィルムパターンの除去工程時において、下部の遮光性膜または遮光性膜パターンの除去工程時に、下部の位相反転膜の損失を防止するように、遮光性膜または位相反転膜上にハードフィルムパターンまたは遮光性膜パターンとエッチング選択比を持つ保護膜を形成することで、フォトマスク製造後に遮光性膜パターンまたは位相反転膜パターンの側面及び上下厚さの損失を防止して厚さ均一性を確保できる。【選択図】 図１

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Номер записи: 14
13-08-2019 дата публикации

Semiconductor devices

Номер: US10381490B2
Автор: Dong-Soo Lee, Jae-Jung Kim, Jin-Kyu Jang, Sang-Jin Hyun, Sang-Yong Kim, Won-keun CHUNG
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

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Номер записи: 15
10-10-2023 дата публикации

Semiconductor devices

Номер: US11784260B2
Автор: Dong-Soo Lee, Jae-Jung Kim, Jin-Kyu Jang, Sang-Jin Hyun, Sang-Yong Kim, Won-keun CHUNG
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

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Номер записи: 16
04-04-2016 дата публикации

位相反転ブランクマスク及びフォトマスク

Номер: JP2016045490A
Автор: Chang-Jun Kim, Cheol Shin, Chul-Kyu Yang, Jong-Hwa Lee, Kee-Soo Nam, Kyu-Jin JANG, Min-Ki CHOI, キム，チャン−ジュン, ジャン，キュ−ジン, シン，チョル, チェー，ミン−ギ, ナム，キ−ス, ヤン，チョル−ギュ, リ，ジョン−ファ
Принадлежит: S&S Tech Co Ltd

【課題】 位相反転ブランクマスク及びフォトマスクを提供する。 【解決手段】 位相反転ブランクマスクは、遮光性膜が第１遮光層及び第２遮光層を具備した多層膜又は連続膜構造を有する金属化合物からなる。第２遮光層は、第１遮光層に比べて、単位厚さ当たり露光波長に対する光学密度が高く、第１遮光層は、遮光性膜の全厚の７０％〜９０％を占めるように構成される。このようなブランクマスクは、遮光性が確保され、エッチング速度が改善され、レジスト膜を薄膜化でき、微細パターンの具現が可能である。 【選択図】 図１

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Номер записи: 17
01-10-2015 дата публикации

空白罩幕及利用該空白罩幕的光罩

Номер: TW201537284A
Автор: Chang-Jun Kim, Cheol Shin, Chul-Kyu Yang, Geung-Won Kang, Jong-Hwa Lee, Kee-Soo Nam, Kyu-Jin JANG, Min-Ki CHOI
Принадлежит: S&S Tech Co Ltd

本發明提供了一種空白罩幕和使用所述空白罩幕的光罩。所述空白罩幕可以適用於在所述光罩的製造之後藉由在遮光膜或相移膜上形成具有相對於硬膜或遮光膜的圖案的蝕刻選擇性的保護膜來防止遮光膜或相移膜的圖案的側表面、頂表面以及底表面的厚度損失，以使得在光罩的製造方法中在清洗製程和硬膜圖案的去除製程期間，當執行安置在硬膜之下的遮光膜或遮光膜圖案的去除製程時，可以防止在遮光膜下形成的相移膜或相移膜的損失，由此確保厚度均勻性。

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Номер записи: 18
26-12-2017 дата публикации

Phase-shift blankmask and photomask

Номер: US09851632B2
Автор: Chang-Jun Kim, Cheol Shin, Chul-Kyu Yang, Jong-Hwa Lee, Kee-Soo Nam, Kyu-Jin JANG, Min-Ki CHOI
Принадлежит: S&S Tech Co Ltd

Disclosed is a phase-shift blankmask, in which a light-shielding film includes a metal compound and having a structure of a multi-layer film or a continuous film, which includes a first light-shielding layer and a second light-shielding layer. The second light-shielding layer has higher optical density at an exposure wavelength per unit thickness (Å) than the first light-shielding layer. The first light-shielding layer occupies 70% to 90% of the whole thickness of the light-shielding film. With this, the blankmask secures a light-shielding effect, has an improved etching speed, and makes a resist film thinner, thereby achieving a fine pattern.

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Номер записи: 19
07-11-2017 дата публикации

Semiconductor devices and methods for fabricating the same

Номер: US09812448B2
Автор: Hoon-joo Na, Jin-Kyu Jang, Oh-seong Kwon, Sang-Jin Hyun, Wan-Don Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided are a semiconductor device configured to block a physical diffusion path by forming an oxide layer between barrier layers to prevent impurities from being diffused through the physical diffusion path between the barrier layers, and a method for fabricating the semiconductor device. The semiconductor device includes a gate insulation layer formed on a substrate, a first barrier layer formed on the gate insulation layer, an oxide layer formed on the first barrier layer, the oxide layer including an oxide formed by oxidizing a material included in the first barrier layer, a second barrier layer formed on the oxide layer, a gate electrode formed on the second barrier layer, and source/drains disposed at opposite sides of the gate electrode in the substrate.

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Номер записи: 20
24-01-2017 дата публикации

Blankmask and photomask using the same

Номер: US09551925B2
Автор: Chang-Jun Kim, Cheol Shin, Chul-Kyu Yang, Geung-Won Kang, Jong-Hwa Lee, Kee-Soo Nam, Kyu-Jin JANG, Min-Ki CHOI
Принадлежит: S&S Tech Co Ltd

A blankmask and a photomask using the same are provided. The blankmask can be useful in preventing the loss in thickness of lateral, top and bottom surfaces of a pattern of a light shielding film or a phase shifting film after the manufacture of the photomask by forming protective film, which has an etch selectivity with respect to a pattern of a hard film or the light shielding film, on the light shielding film or the phase shifting film so that the loss of the phase shifting film formed under the light shielding film or the phase shifting film can be prevented when a process of removing the light shielding film disposed under the hard film or a pattern of the light shielding film is performed during a washing process and a process of removing a pattern of the hard film in a method of manufacturing a photomask, thereby securing uniformity in thickness.

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Номер записи: 21
01-11-2016 дата публикации

Blankmask and photomask

Номер: US09482940B2
Автор: Chang-Jun Kim, Cheol Shin, Chul-Kyu Yang, Geung-Won Kang, Jong-Hwa Lee, Kee-Soo Nam, Kyu-Jin JANG, See-Jun Jeong
Принадлежит: S&S Tech Co Ltd

Provided is a photomask having a high-resolution pattern of a half-pitch of 32 nm or less (particularly, a half-pitch of 22 nm or less), which is manufactured by forming a blankmask in which a light-proof film and a hard film having a small thickness and high etch selectivity with respect to the light-proof film are formed on a transparent substrate. The photomask may have a high quality by adjusting a composition ratio of a metal, silicon (Si), and light elements that constitute the light-proof film to suppress damage to the pattern caused by an XeF 2 gas in an electron-beam repair process.

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Номер записи: 22