29-12-2016 дата публикации
Номер: US20160376716A1
Автор:
Jeung Ku KANG,
Dong Ki LEE,
Gyu Heon LEE,
Yong-Hoon KIM,
Ji Il CHOI,
KANG JEUNG KU,
LEE DONG KI,
LEE GYU HEON,
KIM YONG-HOON,
CHOI JI IL,
KANG Jeung Ku,
LEE Dong Ki,
LEE Gyu Heon,
KIM Yong-Hoon,
CHOI Ji Il
Принадлежит:
Disclosed is a method for improving solar energy conversion efficiency of a metal oxide semiconductor photocatalyst, which includes rapidly performing hydrogenation and nitrogenation of a metal oxide semiconductor material through an H/Nmixed gas plasma treatment in a single process at room temperature, so as to enhance photocatalytic energy conversion efficiency. Specifically, disclosed is a treatment technique in which a plasma ball formed by controlling a mixing ratio of hydrogen gas to nitrogen gas in a range of 1:1 to 1:3 contacts with a surface of a metal oxide material, such that a great amount of oxygen vacancy and nitrogen elements are introduced in the surface of the metal oxide material to improve electron-hole pairs transfer ability thereof and decrease a size of the band-gap. A catalyst including the metal oxide material directly converts the solar energy into a compound by photocatalytic hydrogen generation and COconversion. 1. A method for improving solar energy conversion efficiency of a metal oxide semiconductor photocatalyst , comprising: a first process of preparing a metal oxide thin film having n-type semiconductor properties; and a second process of performing a hydrogen and nitrogen mixed gas plasma treatment on the metal oxide thin film.2. The method according to claim 1 , wherein the metal is at least one selected from Ti claim 1 , V claim 1 , Fe claim 1 , Ni claim 1 , Cu claim 1 , Zn claim 1 , Sn claim 1 , Ta claim 1 , W and Bi.3. The method according to claim 1 , wherein the second process includes contacting a plasma sphere formed by an H/Nmixed gas plasma reaction with a surface or particle of the metal oxide thin film in a single process at room temperature to enhance photocatalytic properties and efficiency.4. The method according to claim 3 , wherein radicals included in the H/Nmixed gas plasma are hydrogen radicals (H) claim 3 , nitrogen radicals (N) and hydrogenated nitrogen radicals (NH).5. The method according to claim 1 , wherein ...
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