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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 10. Отображено 10.
05-01-2005 дата публикации

薄膜晶体管及薄膜晶体管的制造方法

Номер: CN0001560909A
Принадлежит:

The invention is a film transistor and a manufacturing method for the film transistor. The film transistor is made up of a base board, a gate electrode, a grating dielectric layer, a channel layer and a source/drain electrode. The manufacturing method for the film transistor is: at first, it forms the gate electrode on the base board. Following, forms dielectric layer on the base board, and the gate dielectric layer covers the gate electrode. Then, forms a channel layer on the grating dielectric layer, and the material of the channel layer is shallow impurity noncrystal silicon. Finally, it forms source electrode and drain electrode on the channel layer. The method can increase electron mobility between the startup state current and the channel area.

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12-10-2005 дата публикации

Tft LCD, laminated capacitor and forming method thereof

Номер: CN0001680861A
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29-08-2023 дата публикации

HBc-Pgp3 recombinant protein vaccine and application thereof

Номер: CN116655753A
Принадлежит:

The invention relates to the technical field of research and development of chlamydia vaccines, in particular to an HBc-Pgp3 recombinant protein vaccine and application thereof. A Pgp3 antigen fragment with T cell and B cell immunogenicity is obtained through immunogenicity analysis, the Pgp3 antigen fragment is integrated with an HBc-N144 virus capsid skeleton, a recombinant antigen with high immunogenicity is obtained, the recombinant antigen can cause specific lymphocyte proliferation and increase of cell factor concentration, and the recombinant antigen can be used for preparing a recombinant antigen with high immunogenicity. Humoral immunity and cellular immunity of cells can be effectively enhanced, and the method has huge application value in control and prevention of chlamydia infection.

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08-09-2004 дата публикации

具有非矩阵型遮光结构的平面显示器

Номер: CN0001527107A
Принадлежит:

The present invention provides one kind of planar display with non-matrix blocking structure. The non-matrix blocking structure includes main blocking structure and auxiliary blocking structure, the main blocking structure has interval and main space corresponding to pixel area, and the auxiliary blocking structure is corresponding to the interval of the main blocking structure. Each of the intervals corresponds to scanning line or signal line. Each of the main spaces is connected to at least one interval, and each of the intervals connects two adjacent main spaces.

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25-08-2004 дата публикации

半透射式显示器的驱动方法

Номер: CN0001523563A
Принадлежит:

The invention provides a driving method for half-transmitting monitor; the monitor includes several image elements which are set at the cross point of several data lines and several scanning lines, and each image element includes a transmitting sub-element, a reflection element and a driving circuit for driving the two kind of elements. The driving method is: it carries on a examining program at first, in order to examine the operation mode of the half-transmitting monitor, then adjusts the parameter of the driving circuit according to the result of the examining program, in order to make the operation mode reach a best displaying effect. When the operation mode is a transmitting operation mode, the parameter is used to make the transmitting sub-element to reach the best effect; when the mode is a reflection operation mode, the parameter is used to realize the best effect of the reflection sub-element.

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12-08-2015 дата публикации

Pixel

Номер: CN104834141A
Принадлежит:

The invention discloses a pixel, which comprises a dividing unit, an LCD capacitive, a control unit, a first capacitive, a writing unit and an adjusting unit. The first end of the dividing unit is used to receive a first pressure; a control end is used to receive a first control signal; the LCD capacitive is electrically coupled to the second end of the dividing unit; the control unit is electrically coupled to the dividing unit, and the control end is used to receive a second control signal. The writing unit is electrically coupled to the first capacitive to provide a first pixel data signal to the first capacitive based on a third control signal. The adjusting unit is electrically coupled to the first capacitive to receive a second pressure and divide the pressure between the first pressure and the second pressure based on the first pixel data signal stored by the first capacitive. In this way, the pressure stored by the LCD capacitive is controlled and the LCD controlled by the LCD capacitive ...

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19-01-2005 дата публикации

Flat display with anti-dazzle construction and method for making same

Номер: CN0001567074A
Автор: LUO FANGZHEN, FANGZHEN LUO
Принадлежит:

This invention provides a plane display with opacification device and its light shield is located on the thin film transistor base plate located separately on the edge of each picture element and is parallel to the scanning line and data line and is overlapped on the picture element electrode. Besides, it also provides one capacitor with each picture element area, wherein, the down electrode plate of the capacitor comprises part scanning line and its extruding part and the down electrode plate is overlapped with the picture element electrode. The upper electrode plate and the data line are on same layer and are made of same materials . íí ...

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31-08-2011 дата публикации

Method for manufacturing film transistor

Номер: CN0101625977B
Принадлежит:

The invention relates to a method for manufacturing a film transistor. The method comprises the following steps: firstly, a grid electrode is formed on a basal plate; secondly, a grid insulating layer is formed on the basal plate for covering the grid electrode; thirdly, a metal oxide material layer is formed on the grid insulating layer; fourthly, photoresist layers are formed on the metal oxidematerial layer, wherein, the thickness of the photoresist layer above the grid electrode is greater than that of the photoresist layers above both sides of the grid electrode; fifthly, the photoresist layers are used as a mask, and part of the metal oxide material layer is removed so as to form a metal oxide active layer; sixthly, the photoresist layers above both sides of the grid electrode are removed, and the remaining photoresist layers cover part of the metal oxide active layer; and seventhly, a source electrode and a drain electrode are formed on the metal oxide active layer covered with the ...

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13-01-2010 дата публикации

Method for manufacturing film transistor

Номер: CN0101625977A
Принадлежит:

The invention relates to a method for manufacturing a film transistor. The method comprises the following steps: firstly, a grid electrode is formed on a basal plate; secondly, a grid insulating layer is formed on the basal plate for covering the grid electrode; thirdly, a metal oxide material layer is formed on the grid insulating layer; fourthly, photoresist layers are formed on the metal oxide material layer, wherein, the thickness of the photoresist layer above the grid electrode is greater than that of the photoresist layers above both sides of the grid electrode; fifthly, the photoresist layers are used as a mask, and part of the metal oxide material layer is removed so as to form a metal oxide active layer; sixthly, the photoresist layers above both sides of the grid electrode are removed, and the remaining photoresist layers cover part of the metal oxide active layer; and seventhly, a source electrode and a drain electrode are formed on the metal oxide active layer covered with ...

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27-12-2006 дата публикации

Driving method of semi-transmissive display

Номер: CN0001292396C
Автор: LUO FANGZHEN, FANGZHEN LUO
Принадлежит:

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