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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 12. Отображено 12.
11-03-2015 дата публикации

Micro-strip dual-passband filter based on hybrid electromagnetic coupling

Номер: CN104409810A
Автор: LI LINGXIA, YE JING, LYU XIAOSONG, CAI HAOCHENG, ZHANG SHUAI
Принадлежит:

The invention discloses a micro-strip dual-passband filter based on hybrid electromagnetic coupling. A first resonator and a second resonator as well as a third resonator and a fourth resonator are laterally symmetrically arranged on a dielectric substrate. An input feeder and an output feeder are laterally symmetrically arranged on the dielectric substrate. The input feeder is connected with the first resonator. The output feeder is connected with the second resonator. The lower portions of the first resonator and the second resonator are coupled with the third resonator and the fourth resonator respectively. Six transmission zeros are formed on two sides of the passbands, so that frequency selection feature of the filter is improved. Two of the transmission zeros are arranged between the first passband and the second passband so as to increase isolation of the passbands. Length of two arms of the resonators is adjusted to adjust electromagnetic coupling strength of the resonators, and ...

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Номер записи: 1
30-07-2014 дата публикации

Low-temperature-sintered niobate high-quality-factor microwave dielectric ceramic material

Номер: CN103951430A
Автор: LI LINGXIA, CAI HAOCHENG, GAO ZHENGDONG, SUN HAO, LYU XIAOSONG, CHEN JUNXIAO
Принадлежит:

The invention discloses a low-temperature-sintered niobate high-quality-factor microwave dielectric ceramic material of which the chemical formula is Ni0.04Zn0.96TiNb2O8+(1-4)wt%CuO. The microwave dielectric ceramic material is prepared by the following steps: calcining chemical raw materials ZnO, NiO, Nb2O5, TiO2 and CuO at 850 DEG C to synthesize a precursor, and sintering at 900-940 DEG C. From the angle of LTCC (low temperature co-fired ceramic), a small amount of low-melting-point sintering assistant CuO is doped in the Ni0.04Zn0.96TiNb2O8 system, thereby keeping excellent microwave behaviors under the condition of lowering the sintering temperature; and the dielectric constant is 30-34, the quality factor is 27800-41500GHz, and the temperature coefficient of resonance frequency is -35 to -41*10<-6>/DEG C. The microwave dielectric ceramic material has the advantages of simple preparation technique and no pollution in the process, and has wide application prospects.

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Номер записи: 2
23-07-2014 дата публикации

High-quality-factor and temperature-stable microwave dielectric ceramic material

Номер: CN103936419A
Автор: LI LINGXIA, CAI HAOCHENG, SUN HAO, GAO ZHENGDONG, CHEN JUNXIAO, LYU XIAOSONG
Принадлежит:

The invention discloses a high-quality-factor and temperature-stable microwave dielectric ceramic material. The microwave dielectric ceramic material has a chemical formula of Zn0.5Mg0.5ZrNb2O8 and is prepared by calcining chemical raw materials ZnO, MgO, ZrO2 and Nb2O5 at 900 DEG C to synthesize a precursor and sintering at 1180-1240 DEG C. According to the invention, Zn<2+> ions are replaces by Mg<2+> ions and the quality factor and the frequency temperature coefficient of the material are improved by increasing the degree of order, bulk density and like, wherein the sintering temperature is 1100-1180 DEG C, the dielectric constant is 20-24, the quality factor is 60, 823- 98, 700GHz and the temperature coefficient of resonant frequency is (-40)-(-37)*10<-6>/ DEG C. The microwave dielectric ceramic material disclosed by the invention has the advantages of simple process, no pollution and broad application prospects.

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Номер записи: 3
06-06-2023 дата публикации

Construction method for extremely thick plain concrete cushion layer of ground-mounted LNG (Liquefied Natural Gas) storage tank

Номер: CN116220039A
Автор: WANG GUOHUI, LI YOUDONG, LI LIANG, QIN LUSHENG, ZHANG LIANG, FAN HUIHONG, LIU SHUANGCHEN, XIAO JIAN, YUAN LIWEI, AN JITIAN, WANG XINLEI, WANG QINGJUN, ZHU XINGWANG, LI XIAODONG, CHEN JUNJUN, QI CHUNLEI, LYU XIAOSONG, LIANG XUEPENG, LI SHIFENG, CHANG WEIWEI
Принадлежит:

The invention provides a construction method for an extremely thick plain concrete cushion layer of a ground type LNG storage tank. The construction method comprises the steps that S1, pouring subareas of the plain concrete cushion layer are designed; s2, vertical column holes are formed in the outer boundary of the plain concrete cushion layer; s3, a pouring operation platform is erected; s4, vertical construction joints are formed in the boundary lines of the pouring subareas; s5, setting a cushion layer pouring elevation control line; s6, plain concrete cushion layers are poured in different areas; s7, surface treatment of the plain concrete cushion layer; s8, maintaining the plain concrete cushion layer; s9, the pouring operation platform and the working pedal are dismantled; and S10, the PVC pipe is sealed. The construction operation platform is arranged in the pouring area, so that the problem that personnel do not have construction operation conditions for pouring, vibrating, trowelling ...

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Номер записи: 4
30-07-2014 дата публикации

Moderate-temperature stable-sintering-temperature low-loss microwave dielectric ceramic material

Номер: CN103951428A
Автор: LI LINGXIA, CAI HAOCHENG, SUN HAO, GAO ZHENGDONG, YE JING, LYU XIAOSONG
Принадлежит:

The invention discloses a moderate-temperature stable-sintering-temperature low-loss microwave dielectric ceramic material of which the chemical formula is Ca0.45Zn0.55TiNb2O8. The microwave dielectric ceramic material is prepared by the following steps: calcining chemical raw materials ZnO, CaO, Nb2O5 and TiO2 at 850 DEG C to synthesize a precursor, and sintering at 1060-1140 DEG C. Ca<2+> is used instead of Zn<2+> to change the phase composition of the material. The sintering temperature is 1060-1140 DEG C, the dielectric constant is 34-40, the quality factor is 42000-51500GHz, and the temperature coefficient of resonance frequency is -10 to 11*10<-6>/DEG C. The microwave dielectric ceramic material has the advantages of simple preparation technique and no pollution in the process, and has wide application prospects.

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Номер записи: 5
14-05-2014 дата публикации

Medium-temperature sintered low-loss temperature stabilization type microwave dielectric ceramic material

Номер: CN103787657A
Автор: LI LINGXIA, CAI HAOCHENG, GAO ZHENGDONG, SUN HAO, LYU XIAOSONG
Принадлежит:

The invention discloses a medium-temperature sintered low-loss temperature stabilization type microwave dielectric ceramic material which has a chemical formula of Zn0.84Ni0.16TiNb2O8-0.18TiO2. The medium-temperature sintered low-loss temperature stabilization type microwave dielectric ceramic material is prepared by adopting the steps: respectively weighing and compounding ZnO, NiO, Nb2O5 and TiO2 according to a stoichiometric ratio respectively, ball-milling in a tank, drying, screening and then calcining at a temperature of 810 DEG C to synthesize a precursor; pressing the precursor into a blank body, and sintering at a temperature of 1040-1120 DEG C to prepare the medium-temperature sintered low-loss temperature stabilization type microwave dielectric ceramic material. The dielectric constant of the medium-temperature sintered low-loss temperature stabilization type microwave dielectric ceramic material is 40-46, the quality factor of the medium-temperature sintered low-loss temperature ...

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Номер записи: 6
06-08-2014 дата публикации

Low-loss micorwave dieleertic ceramic material for chip type multi-layer ceramic capacitor

Номер: CN103964847A
Автор: LI LINGXIA, CAI HAOCHENG, GAO ZHENGDONG, SUN HAO, CHEN JUNXIAO, LYU XIAOSONG
Принадлежит:

The invention discloses a low-loss micorwave dieleertic ceramic material for a chip type multi-layer ceramic capacitor. The chemical formula of the low-loss micorwave dieleertic ceramic material is Zn3(Nb0.8Ta0.2)2O8, the chemical raw materials adopted comprise ZnO, Nb2O5 and Ta2O5, precursors are synthesized through calcining of the chemical raw materials at the temperature of 900 DEG C, and then the sintering is conducted at the temperature of 1100-1180 DEG C. According to the low-loss micorwave dieleertic ceramic material for the chip type multi-layer ceramic capacitor, the Ta<5+> is adopted to replace the Nb<5+> in small amount, so that the quality factor (60,823-98,700 GHz) is improved effectively; the sintering temperature is 1100-1180 DEG C, the dielectric constant is 20-24, and the temperature coefficient of resonance frequency is -40-(-37*10<-6>)/DEG C; in addition, the low-loss micorwave dieleertic ceramic material for the chip type multi-layer ceramic capacitor has the advantages ...

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Номер записи: 7
30-09-2015 дата публикации

Stable-temperature medium-temperature-sintering microwave dielectric ceramic and preparation method thereof

Номер: CN104944939A
Автор: LI LINGXIA, LI SAI, GAO ZHENGDONG, LYU XIAOSONG, SUN HAO
Принадлежит:

The invention discloses a stable-temperature medium-temperature-sintering microwave dielectric ceramic and a preparation method thereof. The preparation method comprises the following steps: proportioning MgO, TiO2 and CaCO3 according to the stoichiometric formula 0.93MgTiO3-0.07CaTiO3, carrying out ball milling, drying, screening and presintering at 900-1150 DEG C; proportioning La2O3 and Al2O3 according to the stoichiometric formula LaAlO3, carrying out ball milling, drying, screening and presintering at 1100-1300 DEG C; and mixing the two presintered powders in a mole ratio of 99:1, adding 1-3 wt% of ZnO and 1-3 wt% of B2O3, carrying out ball milling, drying, screening, granulating, compacting into a green compact, and sintering at 1075-1175 DEG C to prepare the stable-temperature medium-temperature-sintering microwave dielectric ceramic. The Qf value is up to 33000-57000 GHz, tau reaches -9.1 to -2.6 ppm/DEG C, and the optimal sintering temperature is lowered to 1125 DEG C. The stable-temperature ...

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Номер записи: 8
30-09-2015 дата публикации

Stable-temperature magnesium-titanate-base microwave dielectric ceramic and preparation method thereof

Номер: CN104944940A
Автор: LI LINGXIA, LI SAI, LYU XIAOSONG, SUN HAO, YE JING
Принадлежит:

The invention discloses a stable-temperature magnesium-titanate-base microwave dielectric ceramic and a preparation method thereof. The expression formula is 0.89MgTiO3-0.11(Ca0.4Na0.3Sm0.3)TiO3. The preparation method comprises the following steps: proportioning MgO and TiO2 according to the stoichiometric formula MgTiO3, carrying out ball milling, drying, screening, and presintering at 800-1000 DEG C; proportioning TiO2, CaCO3, Sm2O3 and Na2CO3 according to the stoichiometric formula (Ca0.4Na0.3Sm0.3)TiO3, carrying out ball milling, drying, screening and presintering at 1000-1300 DEG C; mixing the two presintered powders in a mole ratio of 89:11, carrying out ball milling, drying, screening, granulating and pressing to obtain a green compact; and sintering the green compact at 1200-1300 DEG C to prepare the magnesium-titanate-base stable-temperature microwave dielectric ceramic. The Qf value reaches 55000-72000GHz, and the temperature coefficient of resonance frequency (tau) reaches ...

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Номер записи: 9
18-06-2014 дата публикации

Medium-sintering temperature stable microwave dielectric ceramic material

Номер: CN103864426A
Автор: LI LINGXIA, CAI HAOCHENG, GAO ZHENGDONG, SUN HAO, LYU XIAOSONG
Принадлежит:

The invention discloses a medium-sintering temperature stable microwave dielectric ceramic material. The chemical formula of the medium-sintering temperature stable microwave dielectric ceramic material is 0.4Zn0.8Mg0.2ZrNb2O8-0.6TiO2; firstly, ZnO, MgO, ZrO2, Nb2O5 and TiO2 are weighed and prepared according to a stoichiometric ratio, respectively; secondly, a precursor is synthesized through ball-milling, drying, siveving and calcining at 850 DEG C; thirdly, the precursor is pressed into a blank by virtue of pressure, and the blank is sintered at a temperature ranging from 1040 to 1120 DEG C, and finally, the temperature stable microwave dielectric ceramic material is obtained. The dielectric constant of the medium-sintering temperature stable microwave dielectric ceramic material ranges from 45 to 48, the quality factor of the same ranges from 40,421 to 43,935 GHz, and the temperature coefficient of resonance frequency of the same ranges from minus 13.7*10<-6> to 5.5*10<-6>/DEG C. The ...

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Номер записи: 10
30-07-2014 дата публикации

Low-temperature sintered low-loss microwave dielectric ceramic material

Номер: CN103951429A
Автор: LI LINGXIA, CAI HAOCHENG, SUN HAO, GAO ZHENGDONG, CHEN JUNXIAO, LYU XIAOSONG
Принадлежит:

The invention discloses a low-temperature sintered low-loss microwave dielectric ceramic material. The chemical formula of the low-temperature sintered low-loss microwave dielectric ceramic material is Ni0.04Zn0.96TiNb2O8+(1-4)wt%B2O3; the low-temperature sintered low-loss microwave dielectric ceramic material is obtained by sintering chemical raw materials ZnO, NiO, Nb2O5 and TiO2 at a temperature ranging from 900 to 940 DEG C. The invention provides a low-temperature sintered low-loss microwave dielectric ceramic material and a preparation method by using B2O3 as a sintering auxiliary on the basis of the ZnTiNb2O8 ceramics; the relatively good dielectric property of the low-temperature sintered low-loss microwave dielectric ceramic material is retained. The sintering temperature of the ceramic material ranges from 900 to 940 DEG C, the dielectric constant of the ceramic material is 30-36, the quality factor of the ceramic material is 32,100-39,500GHz, and the temperature coefficient of ...

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Номер записи: 11
30-07-2014 дата публикации

Microwave dielectric ceramic material for multilayer ceramic chip capacitors

Номер: CN103951427A
Автор: LI LINGXIA, CAI HAOCHENG, SUN HAO, YE JING, GAO ZHENGDONG, LYU XIAOSONG
Принадлежит:

The invention discloses a microwave dielectric ceramic material for multilayer ceramic chip capacitors, of which the chemical formula is Zn0.96Ni0.04Zr0.05Ti0.95Nb2O8. The microwave dielectric ceramic material is prepared by the following steps: calcining chemical raw materials ZnO, NiO, Nb2O5, TiO2 and ZrO2 at 880 DEG C to synthesize a precursor, and sintering at 1060-1140 DEG C. Ni<2+> and Zr<4+> are substituted for small amounts of Zn<2+> and Ti<4+> to effectively enhance the quality factor (59010-68700GHz); and the sintering temperature is 1060-1140 DEG C, the dielectric constant is 34-38, and the temperature coefficient of resonance frequency is -41 to -35*10<-6>/DEG C. The microwave dielectric ceramic material has the advantages of simple preparation technique and no pollution in the process, and has wide application prospects.

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Номер записи: 12