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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 348. Отображено 116.
22-08-2017 дата публикации

ASIC packaging type electronic brake lamp switch and electronic brake system applying the same

Номер: US0009738218B2
Автор: Han-Gil Park, Jae-Sung Heo, Chang-Hyun Lee, Ean-Soo Cho, Jeong-Seop Byeon, PARK HAN-GIL, HEO JAE-SUNG, LEE CHANG-HYUN, CHO EAN-SOO, BYEON JEONG-SEOP, Park Han-Gil, Heo Jae-Sung, Lee Chang-Hyun, Cho Ean-Soo, Byeon Jeong-Seop
Принадлежит: Hyundai Motor Company, Kia Motors Corporation, Truwin Co., Ltd., HYUNDAI MOTOR CO LTD, KIA MOTORS CORP, TRUWIN CO LTD

An electronic brake lamp switch may include an application-specific integrated circuit (ASIC) configured to generate a signal for turning on a brake lamp, an first output signal, and a second output signal, respectively, when a brake pedal is pressed and configured to package electrical elements for preventing failure when the failure such as outside overvoltage, abnormal surge or short circuit able to be generated on an output terminal occurs, and a printed circuit board (PCB) configured to receive power for operating the application-specific integrated circuit and to which the ASIC is mounted.

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Номер записи: 1
25-04-2017 дата публикации

Vertical memory devices

Номер: US0009634023B2
Автор: Chang-Hyun Lee, LEE CHANG-HYUN, Lee Chang-Hyun
Принадлежит: Samsung Electronics Co., Ltd., LEE CHANG-HYUN, SAMSUNG ELECTRONICS CO LTD, Lee Chang-Hyun

According to example embodiments, a vertical memory device includes a low resistance layer on a lower insulation layer, a channel layer on the low resistance layer, a plurality of vertical channels on the channel layer, and a plurality of gate lines. The vertical channels extend in a first direction that is perpendicular with respect to a top surface of the channel layer. The gate lines surround outer sidewalls of the vertical channels, and are stacked in the first direction and are spaced apart from each other.

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Номер записи: 2
21-02-2017 дата публикации

Semiconductor devices having air gaps

Номер: US0009577115B2
Автор: Byung-Kyu Cho, Chang-Hyun Lee, Young-Woo Park, CHO BYUNG-KYU, LEE CHANG-HYUN, PARK YOUNG-WOO, Cho Byung-Kyu, Lee Chang-Hyun, Park Young-Woo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., CHO BYUNG-KYU, LEE CHANG-HYUN, PARK YOUNG-WOO, SAMSUNG ELECTRONICS CO LTD, Cho Byung-Kyu, Lee Chang-Hyun, Park Young-Woo

A semiconductor device has an isolation layer pattern, a plurality of gate structures, and a first insulation layer pattern. The isolation layer pattern is formed on a substrate and has a recess thereon. The gate structures are spaced apart from each other on the substrate and the isolation layer pattern. The first insulation layer pattern is formed on the substrate and covers the gate structures and an inner wall of the recess. The first insulation layer pattern has a first air gap therein.

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Номер записи: 3
12-09-2017 дата публикации

Non-volatile memory devices and methods of operating the same

Номер: US0009761314B2
Автор: Chang-Hyun Lee, Jung-Dal Choi, LEE CHANG-HYUN, CHOI JUNG-DAL, Lee Chang-Hyun, Choi Jung-Dal
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A non-volatile memory device includes a semiconductor substrate and a tunnel insulating layer and a gate electrode. A multiple tunnel insulation layer with a plurality of layers, a charge storage insulation layer, and a multiple blocking insulation layer with layers are sequentially stacked between the gate electrode and the tunnel insulating layer. A first diffusion region and a second diffusion region in the semiconductor substrate are adjacent to opposite respective sides of the gate electrode. When a voltage is applied to the gate electrode and the semiconductor substrate to form a voltage level difference therebetween, a minimum field in the tunnel insulation layer is stronger than in the blocking insulation layer. A minimum field at a blocking insulation layer can be stronger than at a tunnel insulation layer, and the migration probability of charges through the tunnel insulation layer can be higher than through the blocking insulation layer.

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Номер записи: 4
10-10-2017 дата публикации

Method and apparatus for encoding video using variable partitions for predictive encoding, and method and apparatus for decoding video using variable partitions for predictive encoding

Номер: US0009787983B2
Автор: Chang-Hyun Lee, Tammy Lee, Jianle Chen, Dae-Sung Cho, Woo-Jin Han, Il-Koo Kim, LEE CHANG-HYUN, LEE TAMMY, CHEN JIANLE, CHO DAE-SUNG, HAN WOO-JIN, KIM IL-KOO, Lee Chang-Hyun, Lee Tammy, Chen Jianle, Cho Dae-Sung, Han Woo-Jin, Kim Il-Koo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD

A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction.

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Номер записи: 5
29-11-2016 дата публикации

Wireless transceiver circuit with reduced area

Номер: US0009509375B2
Автор: Chang-Kun Park, Chang-Hyun Lee, Suk-Hyeon Yoon, Hyung-Jun Cho, Jun-Gi Choi, Jin-Ho Yoo, PARK CHANG-KUN, LEE CHANG-HYUN, YOON SUK-HYEON, CHO HYUNG-JUN, CHOI JUN-GI, YOO JIN-HO, Park Chang-Kun, Lee Chang-Hyun, Yoon Suk-Hyeon, Cho Hyung-Jun, Choi Jun-Gi, Yoo Jin-Ho
Принадлежит: SK HYNIX INC., SOONGSIL UNIVERSITY FOUNDATION OF UNIVERSITY-INDUSTRY COOPERATION, SK HYNIX INC, SOONGSIL UNIV FOUND OF UNIV-INDUSTRY COOP, Soongsil University Foundation of University-Industry Cooperation

A wireless power transmission/reception system includes a wireless power transmission circuit and a wireless power reception circuit. The wireless power transmission circuit includes an oscillator, a DC-AC converter that converts a direct current to an alternating current and is turned on/off in response to a control signal, a power transmission coil that transmits AC power, a signal reception coil, and a signal receiver that transfers the control signal to the DC-AC converter. The wireless power reception circuit includes a power reception coil, a rectifier that converts an alternating current to a direct current and is turned on or off in response to the control signal, an control signal generator that generates the control signal, a signal transmission coil, and a signal transmitter that transmits the control signal through the signal transmission coil.

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Номер записи: 6
02-05-2017 дата публикации

Vertical memory device with gate lines at the same level connected

Номер: US0009640549B2
Автор: Seok-Won Lee, Joon-Hee Lee, Dong-Seog Eun, Chang-Hyun Lee, LEE SEOK-WON, LEE JOON-HEE, EUN DONG-SEOG, LEE CHANG-HYUN, Lee Seok-Won, Lee Joon-Hee, Eun Dong-Seog, Lee Chang-Hyun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., LEE SEOK-WON, LEE JOON-HEE, EUN DONG-SEOG, LEE CHANG-HYUN, SAMSUNG ELECTRONICS CO LTD, Lee Seok-Won, Lee Joon-Hee, Eun Dong-Seog, Lee Chang-Hyun

A vertical memory device includes a substrate, a channel, gate lines and a connecting portion. A plurality of the channels extend in a first direction which is vertical to a top surface of a substrate. A plurality of the gate lines are stacked in the first direction to be spaced apart from each other and extend in a second, lengthwise direction, each gate line intersecting a set of channels and surrounding outer sidewalls of each channel of the set of channels. The gate lines forms a stepped structure which includes a plurality of vertical levels. A connecting portion connects a group of gate lines of the plurality of gate lines located at the same vertical level, the connecting portion diverging from the second direction in which the gate lines of the group of gate lines extend.

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Номер записи: 7
06-06-2017 дата публикации

Nonvolatile memory device and memory system including the same

Номер: US0009672932B2
Автор: Chang-Hyun Lee, LEE CHANG-HYUN, Lee Chang-Hyun
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A nonvolatile memory device includes a memory cell array and a voltage generator. The memory cell array includes a plurality of planes, and each plane receives one of a first ground selection voltage and a second ground selection voltage. The voltage generator is configured to provide selectively one of the first ground selection voltage and the second ground selection voltage independently to each of the planes based on a result of an erase verification operation on each of the plurality of planes.

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Номер записи: 8
27-03-2018 дата публикации

Method and apparatus for controlling home devices on group basis based upon history of the home devices

Номер: US9930519B2
Автор: KIM KYUNG-JAE, KIM CHANG-HYUN, LEE CHANG-HYUN, HAN JI-YEON, Kim Kyung-Jae, Kim Chang-Hyun, Lee Chang-Hyun, Han Ji-Yeon
Принадлежит: SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A method and apparatus for controlling home devices on a group basis in a home network system are provided. The method includes collecting operation state information about a plurality of home devices, generating control history information about the plurality of home devices based on the collected operation state information, receiving a group control command for a group of home devices from among the plurality of home devices, the group of home devices being set based on the control history information, and controlling operations of the group of home devices according to the received group control command.

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Номер записи: 9
12-12-2017 дата публикации

Methods of operating nonvolatile memory devices including variable verification voltages based on program/erase cycle information

Номер: US0009842658B2
Автор: Chang-Hyun Lee, LEE CHANG-HYUN, Lee Chang-Hyun
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

Methods of operating a nonvolatile memory device include performing erase loops on a memory block using a first voltage, performing program loops on memory cells of the memory block using a second voltage, and increasing the first and second voltages based on program/erase cycle information for the memory cells. The first voltage may include an erase verification voltage and the second voltage may include a program voltage.

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Номер записи: 10
10-04-2013 дата публикации

Roof airbag apparatus of vehicle

Номер: CN103029673A
Автор: Lee Chang-Hyun, Choi Jun-Yeol, Lee Un-Koo
Принадлежит:

The invention provides a roof airbag apparatus of a vehicle. A relatively small capacity of airbag apparatus can be used by relatively shortening the distance between locations on which a passenger and the airbag apparatus are mounted to more effectively prevent a head and a neck of the passenger from being damaged through a discriminated supporting action of an upper body and a head part of the passenger while reducing a weight and a price of the airbag apparatus and the airbag apparatus can be easily standardized by configuration the airbag apparatus regardless of the shapes of a crash pad and a wind shield glass.

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Номер записи: 11
30-01-2013 дата публикации

Method and apparatus for transmitting and receiving layered coded video

Номер: CN102907096A
Автор: Lee Chang-Hyun, Park Min-Woo, Cho Dae-Sung, Kim Dae-Hee, Choi Woong-Il
Принадлежит:

Transmitting and receiving a layered coded video, in which a picture of a base layer and a picture of at least one enhancement layer are separately encoded, the encoded pictures of the base layer and the encoded pictures of the at least one enhancement layer are arranged on a slice basis, the arranged pictures are packetized by adding a header to the rearranged pictures, and the packets are transmitted as a bit stream.

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Номер записи: 12
13-12-2016 дата публикации

Apparatus and method for shift perception

Номер: US0009518653B2
Автор: Ki-Young Song, Chang-Hyun Lee, Han-Gil Park, SONG KI-YOUNG, LEE CHANG-HYUN, PARK HAN-GIL, Song Ki-Young, Lee Chang-Hyun, Park Han-Gil
Принадлежит: Hyundai Motor Company, HYUNDAI MOTOR CO LTD, HYUNDAI MOTOR COMPANY

An apparatus for shift perception includes a transmission and a vehicle shift controller configured to perform shifting of the transmission. An electronic shift operator is configured to generate shift stage information by checking a state of a present shift stage or shift planning stage information by a shifting operation of a driver. An electronic braille module is configured to output the shift stage information or the shift planning stage information in braille information.

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Номер записи: 13
27-02-2018 дата публикации

Vertical memory devices with vertical isolation structures and methods of fabricating the same

Номер: US0009905572B2
Автор: Chang-Hyun Lee, LEE CHANG HYUN, Lee Chang-Hyun
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A vertical memory device includes a substrate, a column of vertical channels on the substrate and spaced apart along a direction parallel to the substrate, respective charge storage structures on sidewalls of respective ones of the vertical channels and gate electrodes vertically spaced along the charge storage structures. The vertical memory device further includes an isolation pattern disposed adjacent the column of vertical channels and including vertical extension portions extending parallel to the vertical channels and connection portions extending between adjacent ones of the vertical extension portions.

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Номер записи: 14
20-10-2016 дата публикации

NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE SAME

Номер: US20160307633A1
Автор: Chang-Hyun Lee, LEE CHANG-HYUN, Lee Chang-Hyun
Принадлежит: Samsung Electronics Co., Ltd.

Methods of operating a nonvolatile memory device include performing erase loops on a memory block using a first voltage, performing program loops on memory cells of the memory block using a second voltage, and increasing the first and second voltages based on program/erase cycle information for the memory cells. The first voltage may include an erase verification voltage and the second voltage may include a program voltage.

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Номер записи: 15
13-09-2016 дата публикации

Non-volatile memory device and method of programming the same

Номер: US0009443596B2
Автор: Chang-Hyun Lee, LEE CHANG-HYUN, Lee Chang-Hyun
Принадлежит: Samsung Electronics Co., Ltd., LEE CHANG-HYUN, SAMSUNG ELECTRONICS CO LTD, Lee Chang-Hyun

A non-volatile memory device includes a memory cell array and a voltage generator. The memory cell array has a plurality of cell strings in which a plurality of memory cells are connected with each other in series between a string select transistor and a ground select transistor. The voltage generator generates a program voltage, a first pass voltage, and a second pass voltage. A first boost channel voltage applied when programming an outermost memory cell from among the memory cells of each of non-selected cell strings of the cell strings is lower than a second boost channel voltage applied when programming one of remaining memory cells except for the outermost memory cell. The non-volatile memory device prevents programming disturb caused by hot carrier injection.

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Номер записи: 16
12-01-2012 дата публикации

SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING SHORT CHANNEL EFFECT

Номер: US20120007168A1
Автор: Choi Jung-Dal, Lee Chang-Hyun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A semiconductor device includes a semiconductor substrate including at least one memory channel region and at least one memory source/drain region, the memory channel region and the memory source/drain region being arranged alternately, and at least one word line on the memory channel region, wherein the memory source/drain region has a higher net impurity concentration than the memory channel region. 120.-. (canceled)21. A semiconductor memory device , comprising:an active region having first and second parts;at least two string selection lines on the active region;at least two ground selection lines on the active region; andcell gates lines disposed on the active region,wherein the first part of the active region is located between the at least two string selection lines, and the second part of the active region is below each of the cell gate lines, the first part of the active region having a higher impurity concentration than the second part of the active region.22. The semiconductor memory device as claimed in claim 21 , wherein the first part of the active region is additionally located between the at least two ground selection lines.23. The semiconductor memory device as claimed in claim 21 , wherein the second part of the active region includes at least one memory channel region below one of the cell gate lines and at least one memory source/drain region adjacent to one of the cell gate lines claim 21 , and the memory source/drain region is configured to be inversed by a fringe field from the cell gate line.24. The semiconductor memory device as claimed in claim 23 , wherein the memory source/drain region and the memory channel region have a same conductivity type.25. The semiconductor memory device as claimed in claim 21 , further comprising an outer contact region disposed at one side of an outermost string selection line or an outermost ground selection line claim 21 , wherein the outer contact region and the first part of the active region have a same ...

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Номер записи: 17
12-01-2012 дата публикации

SETTING CIRCUIT AND INTEGRATED CIRCUIT INCLUDING THE SAME

Номер: US20120008423A1
Автор: Kim Dae-Suk, Lee Chang-Hyun
Принадлежит:

A setting circuit includes a selection unit configured to select one of a predefined code and an external code in response to a test signal, and a setting information generation unit configured to generate setting information in response to the code selected by the selection unit. 1. A setting circuit comprising:a selection unit configured to select one of a predefined code and an external code in response to a test signal; anda setting information generation unit configured to generate setting information in response to the code selected by the selection unit.2. The setting circuit of claim 1 , wherein the selection unit is configured to select the predefined code when the test signal is activated claim 1 , and select the external code when the test signal is deactivated.3. The setting circuit of claim 1 , wherein the external code comprises an address inputted from the outside.4. The setting circuit of claim 1 , wherein the setting information comprises a mode register set (MRS) code.5. The setting circuit of claim 1 , further comprising a predefined code storage unit configured to store and output the predefined code.6. The setting circuit of claim 1 , wherein the setting information generation unit comprises:a selection code storage circuit configured to store the code selected by the selection unit when a test MRS signal is activated at a point of time when the MRS signal or the test signal is activated; anda setting information generation circuit configured to generate the setting information in response to the code stored in the selection code storage circuit.7. An integrated circuit claim 1 , comprising:an address input circuit configured to receive an address;a command input circuit configured to receive a command;a command decoding unit configured to decode the address and the command and generate a mode register set (MRS) signal;a selection unit configured to select the address or a predefined code in response to a test signal; anda setting information ...

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Номер записи: 18
16-02-2012 дата публикации

SEMICONDUCTOR DEVICES

Номер: US20120037975A1
Автор: Cho Byung-Kyu, Lee Chang-Hyun, Park Young-Woo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A semiconductor device has an isolation layer pattern, a plurality of gate structures, and a first insulation layer pattern. The isolation layer pattern is formed on a substrate and has a recess thereon. The gate structures are spaced apart from each other on the substrate and the isolation layer pattern. The first insulation layer pattern is formed on the substrate and covers the gate structures and an inner wall of the recess. The first insulation layer pattern has a first air gap therein. 1. A semiconductor device , comprising:a substrate;a plurality of isolation layer patterns disposed within the substrate;a plurality of floating gates adjacent the isolation layer patterns;a control gate above the floating gates;a first insulation layer disposed above the control gate;a plurality of recesses between the control gate and the isolation layer patterns; anda plurality of air gaps formed within the recesses to penetrate the substrate, the isolation layer patterns, the control gate and the first insulation layer.2. The semiconductor device of claim 1 , wherein the plurality of recesses have bottom surfaces lower than that of the floating gates.3. The semiconductor device of claim 1 , wherein the air gaps have bottom surfaces lower than that of the floating gates.4. The semiconductor device of claim 1 , further comprising a second insulation layer pattern on sidewalls of the floating gates and the control gate claim 1 , the inner wall of the recess and the substrate claim 1 ,wherein the first insulation layer pattern is formed on the second insulation layer pattern.5. The semiconductor device of claim 4 , wherein the second insulation layer pattern is flush with the air gaps such that the air gaps fill the entire recesses.6. The semiconductor device of claim 4 , wherein the first insulation pattern is disposed between the second insulation pattern and the air gap.7. The semiconductor device of claim 4 , further comprising:second air gaps formed within the second ...

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Номер записи: 19
17-05-2012 дата публикации

ROOF AIRBAG APPARATUS FOR VEHICLE

Номер: US20120119473A1
Автор: Choi Hyeong Ho, JO Sang Min, LEE Chang Hyun, Lee Un Koo
Принадлежит: HYUNDAI MOTOR COMPANY

A roof airbag apparatus for a vehicle, may include an inflator providing gas pressure, an air tube deploying towards sides of a passenger sitting on a seat when gas may be supplied from the inflator into the air tube, and a front support panel provided on a front end of the air tube to enclose a front portion of the passenger when the air tube may be deployed. 1. A roof airbag apparatus for a vehicle , comprising:an inflator providing gas pressure;an air tube deploying towards sides of a passenger sitting on a seat when gas is supplied from the inflator into the air tube; anda front support panel provided on a front end of the air tube to enclose a front portion of the passenger when the air tube is deployed.2. The roof airbag apparatus as set forth in claim 1 , wherein the air tube includes:a support tube fastened to a roof panel of the vehicle, the support tube being fluid-connected at a first end thereof to the inflator;a first bent tube fluid-connected to a second end of the support tube and bent in a predetermined direction such that the first bent tube is deployed to protect a first side of the passenger;a second bent tube branching off the support tube at a position adjacent to the first end of the support tube and bending in a predetermined direction such that the second bent tube is deployed to protect a second side of the passenger; anda connection tube fluid-connecting front ends of the first and second bent tubes to each other,wherein the first and second bent tubes are spaced apart each other by the connecting tube with a predetermined distance to receive the passenger when the air tube is deployed.3. The roof airbag apparatus as set forth in claim 2 , wherein the front support panel is connected to the roof panel of the vehicle by a tether.4. The roof airbag apparatus as set forth in claim 3 , wherein the tether is in a folded and sewed state while the air tube is not deployed.5. The roof airbag apparatus as set forth in claim 2 , wherein the air tube ...

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Номер записи: 20
31-05-2012 дата публикации

Non-Volatile Memory Devices

Номер: US20120132982A1
Автор: Cho Byung-Kyu, Fayrushin Albert, Lee Chang-Hyun, You Jang-Hyun
Принадлежит:

A non-volatile memory device includes gate structures, an insulation layer pattern, and an isolation structure. Multiple gate structures being spaced apart from each other in a first direction are formed on a substrate. Ones of the gate structures extend in a second direction that is substantially perpendicular to the first direction. The substrate includes active regions and field regions alternately and repeatedly formed in the second direction. The insulation layer pattern is formed between the gate structures and has a second air gap therein. Each of the isolation structures extending in the first direction and having a first air gap between the gate structures, the insulation layer pattern, and the isolation structure is formed on the substrate in each field region. 2. The non-volatile memory device according to claim 1 , wherein ones of the plurality of active regions of the substrate protrude from ones of the plurality of field regions of the substrate.3. The non-volatile memory device according to claim 2 , wherein the isolation structure comprises a liner and a filling layer that are sequentially stacked on the substrate in ones of the plurality of field regions.4. The non-volatile memory device according to claim 3 , wherein the liner extends along sidewalls of the protruded active regions and has a cup-shape that includes a central portion that is substantially empty claim 3 , andwherein the filling layer is configured to partially fill the central portion of the liner.5. The non-volatile memory device according to claim 4 , wherein the first air gap is defined by a top surface of the filling layer claim 4 , a sidewall of the liner claim 4 , a bottom surface of a respective one of the plurality of gate structures claim 4 , and a bottom surface of the insulation layer pattern.6. The non-volatile memory device according to claim 1 , wherein ones of the plurality of gate structures include a tunnel insulation layer pattern claim 1 , a floating gate electrode ...

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Номер записи: 21
07-06-2012 дата публикации

VERTICAL STRUCTURE NON-VOLATILE MEMORY DEVICES INCLUDING IMPURITY PROVIDING LAYER

Номер: US20120139027A1
Автор: Lee Chang-Hyun, Son Byoung-keun
Принадлежит:

A vertical structure non-volatile memory device includes a channel region that vertically extends on a substrate. A memory cell string vertically extends on the substrate along a first wall of the channel regions, and includes at least one selection transistor and at least one memory cell. An impurity providing layer is disposed on a second wall of the channel region and includes impurities. 1. A vertical structure non-volatile memory device comprising:a channel region that vertically extends on a substrate;a memory cell string that vertically extends on the substrate along a first wall of the channel region, and comprises at least one selection transistor and at least one memory cell; andan impurity providing layer disposed on a second wall of the channel region and comprising impurities.2. The vertical structure non-volatile memory device of claim 1 , wherein the impurity providing layer comprises an insulating material doped with impurities and/or a semiconductor material doped with impurities.3. The vertical structure non-volatile memory device of claim 2 , wherein the impurity providing layer comprises a semiconductor material doped with impurities claim 2 , and wherein the channel region is electrically connected to the substrate through the impurity providing layer.4. The vertical structure non-volatile memory device of claim 1 , wherein the channel region has a first impurity concentration claim 1 , andwherein the impurity providing layer has a second impurity concentration that is higher than the first impurity concentration.5. The vertical structure non-volatile memory device of claim 4 , wherein the first impurity concentration is from 10/cmto 10/cm claim 4 , and{'sup': 19', '3', '21', '3, 'wherein the second impurity concentration is from 10/cmto 10/cm.'}6. The vertical structure non-volatile memory device of claim 1 , wherein the channel region is electrically connected to the substrate.7. The vertical structure non-volatile memory device of claim 1 , ...

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Номер записи: 22
05-07-2012 дата публикации

Nonvolatile memory devices

Номер: US20120168852A1
Автор: Chang-Hyun Lee, Jung-Dal Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. First impurity layers are formed at boundaries of the channels and the source/drain regions of the memory cell transistors. The first impurity layers are doped with opposite conductivity type impurities relative to the source/drain regions of the memory cell transistors. Second impurity layers are formed at boundaries between a channel and a drain region of the string selection transistor and between a channel and a source region of the ground selection transistor. The second impurity layers are doped with the same conductivity type impurities as the first impurity layers and have a higher impurity concentration than the first impurity layers.

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Номер записи: 23
15-11-2012 дата публикации

METHOD AND APPARATUS FOR ENCODING VIDEO USING VARIABLE PARTITIONS FOR PREDICTIVE ENCODING, AND METHOD AND APPARATUS FOR DECODING VIDEO USING VARIABLE PARTITIONS FOR PREDICTIVE ENCODING

Номер: US20120288007A1
Автор: Chen Jianle, CHO Dae-Sung, HAN Woo-jin, Kim Il-koo, Lee Chang-Hyun, LEE Tammy
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction.

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Номер записи: 24
11-04-2013 дата публикации

ROOF AIRBAG APPARATUS OF VEHICLE

Номер: US20130087995A1
Автор: Choi Jun Yeol, LEE Chang Hyun, Lee Un Koo
Принадлежит: HYUNDAI MOTOR COMPANY

A relatively small capacity of airbag apparatus can be used by relatively shortening the distance between locations on which a passenger and the airbag apparatus are mounted to more effectively prevent a head and a neck of the passenger from being damaged through a discriminated supporting action of an upper body and a head part of the passenger while reducing a weight and a price of the airbag apparatus and the airbag apparatus can be easily standardized by configuration the airbag apparatus regardless of the shapes of a crash pad and a wind shield glass. 1. A roof airbag apparatus of a vehicle , comprising:a housing mounted on a roof of the vehicle;an outer cushion incorporated in the housing and inflated toward the front of a passenger shoulder position and downward;an inner cushion incorporated in the housing, inflated toward the front of a passenger head position and downward, and positioned inside the outer cushion andan inflator configured to supply inflation gas to be supplied to the outer cushion and the inner cushion.2. The roof airbag apparatus of a vehicle of claim 1 , wherein while the outer cushion is inflated claim 1 , a U-shaped cross section of the outer cushion opened toward a rear passenger from the front is extended vertically claim 1 , the outer cushion is connected to receive inflation gas from the inflator claim 1 , and the outer cushion includes a supply vent hole transferring the inflation gas to the inner cushion claim 1 , andthe inner cushion which is coupled to an inner portion of the outer cushion which is opened in a U shape includes a receiving vent hole for receiving the inflation gas from the outer cushion and a discharging vent hole for discharging the inflation gas to the outside.3. The roof airbag apparatus of a vehicle of claim 2 , wherein the outer cushion includes a left wing portion forming an opened left piece of the U-shaped cross section claim 2 , a right wing portion forming a right piece claim 2 , and an outer front ...

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Номер записи: 25
18-04-2013 дата публикации

Nand flash memory devices

Номер: US20130092996A1
Автор: Chang-Hyun Lee, Jee-Yeon KANG, Jung-Dal Choi
Принадлежит: SAMSUNG ELECTRONICS CO LTD

NAND flash memory device includes a common bit line, a first cell string including a first string selecting transistor having a first gate length, a second string selecting transistor having a second gate length, first cell transistors each having a third gate length and a first ground selecting transistor having a fourth gate length, a second cell string including a third string selecting transistor having the first gate length, a fourth string selecting transistor having the second gate length, second cell transistors each having the third gate length and a second ground selecting transistor having the fourth gate length and a common source line commonly connected to end portions of the first and second ground selecting transistors included in the first and second cell strings. At least one of the first gate length and the second gate length is smaller than the fourth gate length.

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Номер записи: 26
18-04-2013 дата публикации

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

Номер: US20130094287A1
Автор: Choi Jung-Dal, Lee Chang-Hyun, Lee Do-Hyun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A semiconductor device includes a bit line, a first cell string and a second cell string. The first cell string includes a first selecting transistor connected to the bit line in series and having a threshold voltage greater than a first reference voltage, a second selecting transistor having a threshold voltage smaller than a second reference voltage, cell transistors and a ground selecting transistor. The second cell string includes a third selecting transistor connected to the bit line in series and having a threshold voltage smaller than the first reference voltage, a fourth selecting transistor having a threshold voltage greater than the second reference voltage, cell transistors and a ground selecting transistor. A channel region of the first selecting transistor has an enhancement mode and a first conductive type. A channel region of the third selecting transistor has a depletion mode and a second conductive type. 1. A semiconductor memory device , comprising:a bit line;a first cell string including a first selecting transistor, a second selecting transistor, cell transistors and a ground selecting transistor, wherein the first selecting transistor is connected to the bit line in series and has a threshold voltage greater than a first reference voltage, the second selecting transistor has a threshold voltage smaller than a second reference voltage, and a channel region of the first selecting transistor has an enhancement mode and a first conductive type;a second cell string including a third selecting transistor, a fourth selecting transistor, cell transistors and a ground selecting transistor, wherein the third selecting transistor is connected to the bit line in series and has a threshold voltage smaller than the first reference voltage, the fourth selecting transistor has a threshold voltage greater than the second reference voltage, and a channel region of the third selecting transistor has a depletion mode and a second conductive type; anda source line ...

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Номер записи: 27
25-04-2013 дата публикации

Flash Memory Device and Operating Method for Concurrently Applying Different Bias Voltages to Dummy Memory Cells and Regular Memory Cells During Erasure

Номер: US20130100735A1
Автор: Choe Byeong-In, Choi Jung-Dal, Lee Chang-Hyun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Integrated circuit flash memory devices, such as NAND flash memory devices, include an array of regular flash memory cells, an array of dummy flash memory cells and an erase controller. The erase controller is configured to concurrently apply a different predetermined bias voltage to the dummy flash memory cells than to the regular flash memory cells during an erase operation of the integrated circuit flash memory device. Related methods are also described. 1. An integrated circuit flash memory device comprising:an array of regular flash memory cells;an array of dummy flash memory cells; andan erase controller that is configured to form a different predetermined bias voltage to the dummy flash memory cells than to the regular flash memory cells during an erase operation of the integrated circuit flash memory device,wherein the erase controller is configured to form a read bias voltage, a pass bias voltage, a string selector line bias voltage, a bit line bias voltage or a predetermined bias voltage to the dummy flash memory cells and to apply a bias voltage that is less than the read bias voltage, the pass bias voltage, the string selector line bias voltage, the bit line bias voltage or the predetermined bias voltage, respectively, to the regular flash memory cells during the erase operation.2. An integrated circuit flash memory device according to wherein the erase controller is configured to form a first predetermined positive bias voltage to the dummy flash memory cells and a second predetermined positive bias voltage that is less than the first predetermined positive bias voltage to the regular flash memory cells during the erase operation.3. An integrated circuit flash memory device according to wherein the erase controller is configured to form a second negative bias voltage to the regular flash memory cells and a first bias voltage that is less negative than the second negative bias voltage to the dummy flash memory cells during the erase operation.4. A method ...

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Номер записи: 28
06-06-2013 дата публикации

METHOD AND APPARATUS FOR ENCODING AND DECODING IMAGE

Номер: US20130142447A1
Автор: CHO Dae-Sung, Lee Chang-Hyun, Park Min-woo, PARK Pil-kyu
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Methods and apparatuses for encoding and decoding an image in which a block is searched for based on a representative value, rather than being searched for on a pixel-by-pixel basis, thereby search speed may be increased and computational complexity of a search operation may be reduced. 1. A method of encoding an image , the method comprising:dividing an input image frame into blocks having a predetermined size;generating representative values of the blocks based on pixel values of the blocks;searching for a previous block having a representative value that is the same as a representative value of a current block by applying a plurality of skip prediction modes and comparing at least one representative value of previous blocks from among representative values of previous blocks of the current frame encoded prior to the current block and representative values of previous blocks of a previous frame with a representative value of the current block; andadding skip prediction mode information used to search for the previous block having the representative value that is the same as the representative value of the current block to a bitstream.2. The method of claim 1 , wherein the image is a screen image that is output from an arithmetic unit.3. The method of claim 1 , wherein the representative values of the blocks comprise sub-representative values that are generated on a sub-block-by-sub-block basis claim 1 , wherein the sub-block is obtained by dividing each of the blocks having the predetermined size.4. The method of claim 3 , wherein a sub-block unit is a line of pixels in a row direction or a column direction.5. The method of claim 3 , wherein the sub-representative value is generated by using at least one of a mean claim 3 , a variance claim 3 , a cyclic redundancy check (CRC) code claim 3 , and a hash code of pixels in sub-block units.6. The method of claim 1 , wherein the plurality of skip prediction modes comprises:a first skip prediction mode in which a ...

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Номер записи: 29
13-06-2013 дата публикации

CONTROL KNOB FOR VEHICLE

Номер: US20130145896A1
Автор: LEE Chang Hyun, PARK Joon Young
Принадлежит:

A control knob for a vehicle has an improved outward appearance by forming a boundary line between two different materials in a portion that is not visible and preventing abrupt differences in color due to light refraction. The control knob is produced by dual injection molding of two different materials, is installed on one end of a shift lever, and functions as a handgrip. The control knob includes an portion of opaque and transparent materials, an overlapping portion opaque and transparent materials, and a coated portion formed of paint applied to portions of the transparent portion that do not overlap with the opaque portion. A boundary surface between the opaque and transparent portions is such that a refractive index of light passing through the transparent portion from the overlapping portion is close to a refractive index of light passing through the transparent portion from the coated portion. 1. A control knob for a vehicle formed by dual injection molding of two different materials and installed on one end of a shift lever to function as a handgrip , the control knob comprising:an opaque portion formed of an opaque material which is one of the two materials;a transparent portion formed of a transparent material which is another of the two materials;an overlapping portion at which the opaque portion and the transparent portion overlap; anda coated portion formed of paint applied to portions of the transparent portion that do not overlap with the opaque portion;wherein a boundary surface between the opaque portion and the transparent portion is formed in a slope such that a refractive index of light passing through the transparent portion from the overlapping portion is close to a refractive index of light passing through the transparent portion from the coated portion.2. The control knob of claim 1 , wherein:the overlapping portion is formed by a portion of a top surface of the opaque portion overlapping a portion of an undersurface of the transparent ...

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Номер записи: 30
13-06-2013 дата публикации

APPARATUS AND METHOD FOR IDENTIFYING WIRELESS NETWORK PROVIDER IN WIRELESS COMMUNICATION SYSTEM

Номер: US20130152167A1
Автор: KANG Jae-Eun, Lee Chang-Hyun, Lee Jin-Wook, LEE Seong-Wook, Park Woo-Jin, SHIM Hyo-sun
Принадлежит: Samsung Electronics Co., Ltd

To check security of an Access Point (AP) in a wireless communication system, an operating method of a terminal includes, before completing connection to the AP, receiving a frame that informs the terminal of existence of the AP; extracting security test information from the frame; and testing the security of the AP using the security test information. 1. A method for operation of a terminal in a wireless communication system , the method comprising:before completing connection to an Access Point (AP), receiving a frame that informs the terminal of existence of the AP;extracting security test information from the frame; andtesting security of the AP using the security test information.2. The method of claim 1 , wherein the frame is one of a frame periodically broadcast by the AP and a frame transmitted by the AP in response to a request of the terminal.3. The method of claim 1 , wherein the frame is one of a beacon frame and a probe response frame.4. The method of claim 1 , wherein the testing security of the AP comprises:decrypting the security test information to generate a decryption result; anddetermining whether the decryption result matches predefined information.5. The method of claim 4 , further comprising:obtaining a public key for the decryption over a mobile communication network.6. The method of claim 1 , wherein the testing security of the AP comprises:generating a hash value using at least one input parameter; anddetermining whether the security test information comprises the hash value.7. The method of claim 6 , wherein the at least one input parameter comprises at least one of a system time value and a random value.8. The method of claim 7 , further comprising:obtaining at least one of the system time value and the random value over a mobile communication network.9. The method of claim 7 , wherein the testing security of the AP comprises:determining whether the frame is received within a predefined time starting from a time indicated by the system ...

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Номер записи: 31
03-10-2013 дата публикации

METHOD OF PROGRAMMING A NONVOLATILE MEMORY DEVICE

Номер: US20130258771A1
Автор: Choi Jung-Dal, Jang Dong-Hoon, KANG Jee-Yeon, Lee Chang-Hyun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

In method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline, a first channel of the first cell string and a second channel of the second cell string are precharged by applying a first voltage to the bitline, one cell string is selected from the first and second cell strings, and a memory cell included in the selected cell string is programmed by applying a second voltage greater than a ground voltage and less than the first voltage to the bitline. 1. A method of programming a nonvolatile memory device including first and second cell strings that are coupled to one bitline , the method comprising:precharging a first channel of the first cell string and a second channel of the second cell string by applying a first voltage to the bitline;selecting one cell string from the first and second cell strings; andprogramming a memory cell included in the selected cell string by applying to the bitline a second voltage greater than a ground voltage and less than the first voltage.2. The method of claim 1 , wherein the first voltage is a power supply voltage claim 1 , andwherein the second voltage is greater than the ground voltage and less than the power supply voltage.3. The method of claim 1 , wherein the first channel of the first cell string and the second channel of the second cell string are precharged to a first voltage level claim 1 , andwherein, when the memory cell included in the selected cell string is programmed, a voltage of a channel of the selected cell string decreases to a second voltage level that is less than the first voltage level, and a voltage of a channel of an unselected cell string increases to a third voltage level greater than the first voltage level.4. The method of claim 1 , wherein the first cell string includes a first string select transistor of an enhancement mode type coupled to a first string select line claim 1 , a second string select transistor of a depletion mode type ...

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Номер записи: 32
07-11-2013 дата публикации

ROOF AIRBAG DEVICE FOR VEHICLE

Номер: US20130292927A1
Автор: Choi Jun Yeol, LEE Chang Hyun, Lee Un Koo
Принадлежит: HYUNDAI MOTOR COMPANY

A roof airbag device includes an outer cushion and an inner cushion. The outer cushion includes a left wing part and a right wing part, which are oppositely disposed about the passenger's head, an upper cushion part connecting the left and right wing parts, and an outlet hole through which an inflation gas from an inflator is transferred. The inner cushion is disposed between the left and right wing parts, and has an inlet hole through which the inflation gas is supplied, and a discharge hole through which the inflation gas is discharged. 1. A roof airbag device for a vehicle , comprising:an outer cushion having, when inflated, a inverted-U shape, a circumferential wall of which extends longitudinally, and including a left wing part and a right wing part, which are oppositely disposed to define a head-receiving region, an upper cushion part connecting the left and right wing parts, and an outlet hole through which an inflation gas from an inflator is flows; andan inner cushion disposed between the left and right wing parts, and having an inlet hole through which the inflation gas is supplied from the outer cushion via the outlet hole of the outer cushion, and a discharge hole through which the inflation gas is discharged to the outside.2. The roof airbag device for a vehicle according to claim 1 , wherein the left and right wing parts of the outer cushion is configured to restrain a passenger's shoulders from moving forwards when the outer cushion is inflated claim 1 , and the inner cushion is formed as a single unit that protrudes from a lower side toward an upper side thereof to fill the head-receiving region between the left and right wing parts.3. The roof airbag device for a vehicle according to claim 1 , wherein the upper cushion part of the outer cushion connects upper portions of the left and right wing parts claim 1 , and is equipped therein with the inflator.4. The roof airbag device for a vehicle according to claim 1 , wherein the outlet hole is provided ...

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Номер записи: 33
21-11-2013 дата публикации

Airbag cover and module

Номер: US20130307253A1
Автор: Chang Hyun Lee, Hyeong Ho Choi, Hyo Shub Shin, Jae Haeng Yoo, Jung Yeol Jang, Tae In Kim
Принадлежит: Hyundai Motor Co, Kia Motors Corp

An airbag cover includes a housing section which forms an upper part of which is opened and into which a folded airbag cushion is housed; and a guide section which is formed by extending an upper rear end and both ends of the opened housing section to form an additional space for extending a space of the housing section and a front surface of which at a passenger side is opened to guide an initial deployment direction of the airbag cushion toward a passenger side.

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Номер записи: 34
20-02-2014 дата публикации

SEMICONDUCTOR MEMORY DEVICE INCLUDING ALIGNMENT KEY STRUCTURES

Номер: US20140048948A1
Автор: LEE Chang Hyun
Принадлежит: SK HYNIX INC.

A semiconductor memory device includes a first chip and a second chip connected to the first chip physically and electrically, wherein the first chip and the second chip are coupled by through silicon vias (TSVs) formed in a first region, and the first chip and the second chip are coupled by alignment keys formed in second regions. 1. A semiconductor memory device comprising:a first semiconductor chip;a second semiconductor chip stacked on top of the first semiconductor chip, the first and second semiconductor chips being physically and electrically connected to one another;a plurality of through-silicon vias (TSVs) extending between a first region of the first semiconductor chip and a corresponding first region of the second semiconductor chip; andalignment keys formed in a second region of each of the first and second semiconductor chips, the first and second semiconductor chips being coupled to one another by the alignment keys.2. The semiconductor memory device according to claim 1 , wherein the alignment keys of the first and second chips are coupled to one another using TSVs.3. The semiconductor memory device according to claim 1 , wherein the alignment keys of the first and second chips are formed of TSVs that carry power supplies.4. The semiconductor memory device according to claim 1 , wherein the first region is a central region other than edges of the first chip and the second chip.5. The semiconductor memory device according to claim 1 , wherein the second regions are corner regions of the first chip and the second chip.6. The semiconductor memory device according to claim 5 , wherein each of the alignment keys formed in the second regions is formed to have a shape according to a shape of each of corners of the first chip and the second chip.7. The semiconductor memory device according to claim 1 , the first and second semiconductor chips being electrically coupled by the alignment keys.8. A semiconductor memory device comprising:first and second ...

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Номер записи: 35
20-03-2014 дата публикации

Control knob for vehicle

Номер: US20140076098A1
Автор: Chang Hyun Lee, Joon Young Park
Принадлежит: Hyundai Motor Co, Kia Motors Corp

A control knob for a vehicle has an improved outward appearance by forming a boundary line between two different materials in a portion that is not visible and preventing abrupt differences in color due to light refraction. The control knob is produced by dual injection molding of two different materials, is installed on one end of a shift lever, and functions as a handgrip. The control knob includes an portion of opaque and transparent materials, an overlapping portion opaque and transparent materials, and a coated portion formed of paint applied to portions of the transparent portion that do not overlap with the opaque portion. A boundary surface between the opaque and transparent portions is such that a refractive index of light passing through the transparent portion from the overlapping portion is close to a refractive index of light passing through the transparent portion from the coated portion.

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Номер записи: 36
04-01-2018 дата публикации

METHOD AND APPARATUS FOR ENCODING VIDEO USING VARIABLE PARTITIONS FOR PREDICTIVE ENCODING, AND METHOD AND APPARATUS FOR DECODING VIDEO USING VARIABLE PARTITIONS FOR PREDICTIVE ENCODING

Номер: US20180007354A1
Автор: Chen Jianle, CHO Dae-Sung, HAN Woo-jin, Kim Il-koo, Lee Chang-Hyun, LEE Tammy
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction. 1. An apparatus of decoding video , the apparatus comprising:a receiver configured to receive a bitstream including data of a picture, information about a size of a maximum coding unit, and split information; anda decoder configured to split the picture into a plurality of maximum coding units, including the maximum coding unit, using the information about the size of the maximum coding unit, hierarchically split the maximum coding unit into one or more coding units based on the split information, determine one or more prediction units in a coding unit among the one more coding units using partition type information, wherein the partition type information is determined based on a size of the coding unit and indicates one of symmetric type and asymmetric type partitioning of the one or more prediction units, determine one or more transform units in the coding unit, perform prediction on a prediction unit among the one or more prediction units in the coding unit and inverse-transformation on the one or more transform units in the coding unit, and generate a reconstructed coding unit based on the prediction and the inverse-transformation.2. An apparatus of encoding video ...

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Номер записи: 37
11-01-2018 дата публикации

P-RANGE ENGAGEMENT METHOD OF VEHICLE AND CONTROL DEVICE THEREOF

Номер: US20180009439A1
Автор: LEE Chang Hyun, Park Han Gil
Принадлежит:

A P-range engagement method of the vehicle and a device thereof are disclosed. The P-range engagement method is applied to the vehicle equipped with an electronic shift lever, and the method includes performing the vehicle stopping process based on detection of stopping of a traveling vehicle through a control device, holding wheel disks of the vehicle through a controller that is controlled by the control device, comparing the vehicle stopped time period, which is measured by the control device, with a predetermined reference value stored in the control device to determine whether the vehicle stopped time period exceeds the predetermined reference value, and upon determining that the vehicle stopped time period exceeds the predetermined reference value, determining whether conditions for performing P-range engagement are satisfied, and upon determining that the conditions for performing the P-range engagement are satisfied, completing the P-range engagement. 1. A P-range engagement method of a vehicle equipped with an electronic shift lever , the method comprising:performing a vehicle stopping process based on detection of stopping of a traveling vehicle, the detection being performed by a control device;holding wheel disks of the vehicle through a controller when the vehicle stopping process is completed, the controller being controlled by the control device;comparing a vehicle stopped time period with a predetermined reference value stored in the control device, the vehicle stopped time period being measured by the control device, to determine whether the vehicle stopped time period exceeds the predetermined reference value; andupon determining that the vehicle stopped time period exceeds the predetermined reference value stored in the control device, determining whether conditions for performing P-range engagement are satisfied, and upon determining that the conditions for performing the P-range engagement are satisfied, completing the P-range engagement.2. The ...

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Номер записи: 38
10-01-2019 дата публикации

DOOR LOCK CONTROL APPARATUS AND METHOD

Номер: US20190012860A1
Автор: CHOI Seung-eok, KANG Jae-Eun, KIM Chang-Han, Lee Chang-Hyun, LEE Kang-min, RYU Jong-youb
Принадлежит:

Provided are door lock control apparatus and method having enhanced security and being capable of providing improved convenience to a user, the door lock control method including: requesting a server for security information set in a door lock; receiving first security information from the server; unlocking the door lock by using the first security information; and setting second security information different from the first security information, in the door lock. 1. A door lock control method using a terminal , the method comprising:requesting a server for security information set in a door lock;receiving first security information from the server;unlocking the door lock by using the first security information; andsetting second security information different from the first security information, in the door lock.2. The door lock control method of claim 1 , wherein the unlocking comprises:unlocking the door lock by transmitting the first security information to the door lock via short-distance communication; anddetecting a signal generated when the door lock is unlocked.3. The door lock control method of claim 2 , wherein the short-distance communication comprises at least one of magnetic secure transmission (MST) claim 2 , radio frequency identification (RFID) claim 2 , near field communication (NFC) claim 2 , ZigBee claim 2 , Z-Wave claim 2 , Bluetooth claim 2 , Bluetooth low energy (BLE) claim 2 , Wi-Fi claim 2 , and infrared (IR) communication.4. The door lock control method of claim 1 , wherein the receiving comprises receiving claim 1 , from the server claim 1 , the first security information and the second security information that is generated by the server.5. The door lock control method of claim 1 , wherein the setting comprises refining the door lock by transmitting the second security information to the door lock via short-distance communication.6. The door lock control method of claim 1 , wherein the setting comprises:generating the second security ...

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Номер записи: 39
21-01-2021 дата публикации

Device And Method For Detecting High-Voltage Power Distribution Line Path Having Improved Stability

Номер: US20210018540A1
Автор: Hyun Chang Lee
Принадлежит: Individual

In an exemplary embodiment of the present disclosure for solving the problem, disclosed is a stability-improved high voltage power line path exploration apparatus. The stability-improved high voltage power line path exploration apparatus for tracking a high voltage power line and determining a buried path and a connection configuration up to a final power source of a power distribution system, wherein the high voltage power line is connected to a primary winding of a distribution transformer to supply voltage and current, wherein the distribution transformer converts high voltage for distribution to low voltage in proportion to a ratio of a winding combination may include: an exploration current generator for generating a current pulse signal in inverse proportion to a winding ratio for detecting a magnetic field signal around the high voltage power line, in which the exploration current generator is connected to a secondary winding of the distribution transformer; a buried path probe for tracking the buried path and connection configuration of the high voltage power line by detecting the magnetic field signal which is generated around the high voltage power line when the current pulse signal flows through the high voltage power line; and a reverse current limiter for suppressing a generation of a reverse magnetic field generated by an external conductor of the high voltage power line, to improve a reception performance of the buried path probe.

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Номер записи: 40
17-04-2014 дата публикации

NONVOLATILE MEMORY DEVICES

Номер: US20140106518A1
Автор: Choi Jung-Dal, Lee Chang-Hyun
Принадлежит:

A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. First impurity layers are formed at boundaries of the channels and the source/drain regions of the memory cell transistors. The first impurity layers are doped with opposite conductivity type impurities relative to the source/drain regions of the memory cell transistors. Second impurity layers are formed at boundaries between a channel and a drain region of the string selection transistor and between a channel and a source region of the ground selection transistor. The second impurity layers are doped with the same conductivity type impurities as the first impurity layers and have a higher impurity concentration than the first impurity layers. 1. A method of making a nonvolatile memory device , the method comprising:forming a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor where each has a channel region and source/drain regions in a substrate;injecting first impurity ions into the substrate to form first impurity layers at boundaries of the channels and the source/drain regions of the string selection transistor, the memory cell transistors, and the ground selection transistor; andinjecting second impurity ions, which are same conductivity type as the first impurity ions, into the boundaries between the channel and drain regions of the string selection transistor and between the channel and source regions of the ground selection transistor,wherein the first impurity layers are doped with p conductivity type impurities.2. The method of claim 1 , wherein injecting second impurity ions comprises:forming an ion implantation mask on the substrate that exposes portions of the drain region of the string selection transistor and the source region of the ground ...

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Номер записи: 41
10-02-2022 дата публикации

FILLER HAVING EXCELLENT FILLER PROPERTIES COMPRISING HYALURONIC ACID HYDROGEL

Номер: US20220040383A1
Автор: JANG Cheol, Jung Hyun Tae, KIM Ji Sun, LEE Chang Hyun, LEE Chung, REE Hwayoun, SO Jineon
Принадлежит: LG CHEM, LTD.

The present invention relates to a filler comprising a hyaluronic acid hydrogel having a lift value in a specific range relative to the unit amount (w/w %) of hyaluronic acid included in a filler, in contrast to the modification degree, and as a result of having said lift value the filler exhibits improved high viscoelasticity flow properties, has the advantages of both monophasic and biphasic hyaluronic acid hydrogel fillers, and thus exhibits good tissue-restoring properties, has low mobility when injected into skin whilst still maintaining the shape thereof for a long time, and has minimized deformation of the hyaluronic acid through the minimization of the use of crosslinkers, and thus the natural form of hyaluronic acid molecules can be maintained, enabling a reduction in the occurrence of immune reactions and side effects, and thus has excellent soft tissue restoration properties, volume expansion properties and wrinkle alleviation properties. 2. The filler comprising a hyaluronic acid hydrogel according to claim 1 , wherein the A value is 200 to 650 Pa*N/(w/w)%.3. The filler comprising a hyaluronic acid hydrogel according to claim 1 , wherein the B value is 2 to 5 mol %.4. The filler comprising a hyaluronic acid hydrogel according to claim 1 , wherein the storage elastic modulus is 400 to 800 Pa claim 1 , and the cohesive force is 1.0 to 1.7 N as measured by a Tack test.5. The filler comprising a hyaluronic acid hydrogel according to claim 1 , wherein the filler has all the properties of a monophasic hyaluronic acid filler and properties of a hyaluronic acid filler6. The filler comprising a hyaluronic acid hydrogel according to claim 1 , wherein the hyaluronic acid hydrogel includes a crosslinked hyaluronic acid.7. The filler comprising a hyaluronic acid hydrogel according to claim 6 , wherein the crosslinked hyaluronic acid is obtained by crosslinking a hyaluronic acid having a molecular weight of at least 2 claim 6 ,500 claim 6 ,000 Da or more claim 6 , or ...

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Номер записи: 42
10-02-2022 дата публикации

WEB-BROWSER PLUGIN FOR CONSOLIDATING REQUESTED DISAGGREGATED INFORMATION

Номер: US20220043545A1
Автор: AHN Suk Min, ARORA Ankit, BORDOLOI Bijoy, LEE Chang Hyun, MOHANTY Prithvis, Nguyen Khoa
Принадлежит: Coupang Corp.

Disclosed embodiments provide systems and methods implementing a web-browser plugin for providing requested information. A method for providing requested information comprises receiving, as a user interaction on a graphical user interface, a request to provide data associated with a target object presented on a web page, retrieving an object identifier associated with the target object based on a determined data accessibility, the object identifier incorporated in the web page, transmitting the retrieved object identifier to a plurality of systems storing data associated with the target object, the plurality of systems configured to provide data corresponding to the received object identifier in response to the received object identifier, receiving data responsive to transmitting the retrieved object, modifying the web page to include the received data, and presenting the web page on the graphical user interface. 120.-. (canceled)21. A system implementing a web-browser plugin for providing requested information , the system comprising:a tangible storage medium readable by a processing unit and storing instructions, and receiving a request to provide data associated with a target object presented on a web page;', 'accessing one or more sets of attributes associated with a user;', 'determining a data accessibility of the user based on the one or more sets of attributes by parsing a permission incorporated in the accessed set of attributes;', 'retrieving an object identifier associated with the target object based on the determined data accessibility;', 'transmitting the retrieved object identifier to a plurality of systems storing data associated with the target object;', 'receiving data responsive to transmitting the retrieved object; and', 'modifying the web page based on the received data., 'a processing unit configured to execute the instructions to perform a method comprising22. The system of claim 21 , wherein receiving a request to provide data further ...

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Номер записи: 43
25-01-2018 дата публикации

Semiconductor Devices with Vertical Channel Structures

Номер: US20180026050A1
Автор: Lee Chang-Hyun, Park Jin-taek, Park Young-Woo
Принадлежит:

Semiconductor devices are provided. The semiconductor devices may include a substrate, a ground selection gate electrode, and a channel structure. The channel structure may extend the ground selection gate electrode in a first direction perpendicular to a top surface of the substrate, and include a channel layer, a channel contact layer, and a stepped portion. The channel contact layer may contact the substrate and include a first width in a second direction perpendicular to the first direction. The channel layer may contact the channel contact layer, include a bottom surface between a bottom surface of the ground selection gate electrode and the top surface of the substrate in the first direction, and include a second width in the second direction different from the first width. 1. A method of manufacturing a semiconductor device , comprising:alternately forming a plurality of sacrificial layers and a plurality of insulating layers on a substrate, the plurality of sacrificial layers including a first sacrificial layer and a plurality of second sacrificial layers on the first sacrificial layer, the plurality of second sacrificial layers including a material different from that of the first sacrificial layer;forming a channel hole through the plurality of sacrificial layers and the plurality of insulating layers to expose a top surface of the substrate;forming a sidewall protection layer on a sidewall of the channel hole;forming a channel contact layer filling a bottom of the channel hole;removing the sidewall protection layer;forming a channel layer in contact with the channel contact layer on an inner wall of the channel hole;removing the first sacrificial layer; andforming a first gate electrode at a position where the first sacrificial layer is removed.2. The method according to claim 1 , further comprising converting the plurality of second sacrificial layers into a plurality of second gate electrodes by a silicidation process.3. The method according to claim 2 ...

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Номер записи: 44
05-02-2015 дата публикации

WIRELESS TRANSCEIVER CIRCUIT, WIRELESS POWER TRANSMISSION CIRCUIT, WIRELESS POWER RECEPTION CIRCUIT, AND WIRELESS POWER TRANSMISSION/RECEPTION SYSTEM INCLUDING THE SAME

Номер: US20150035374A1
Автор: Cho Hyung-jun, CHOI Jun-Gi, Lee Chang-Hyun, Park Chang-Kun, YOO Jin-Ho, YOON Suk-Hyeon
Принадлежит:

A wireless power transmission/reception system includes a wireless power transmission circuit and a wireless power reception circuit. The wireless power transmission circuit includes an oscillator, a DC-AC converter that converts a direct current to an alternating current and is turned on/off in response to a control signal, a power transmission coil that transmits AC power, a signal reception coil, and a signal receiver that transfers the control signal to the DC-AC converter. The wireless power reception circuit includes a power reception coil, a rectifier that converts an alternating current to a direct current and is turned on or off in response to the control signal, an control signal generator that generates the control signal, a signal transmission coil, and a signal transmitter that transmits the control signal through the signal transmission coil. 1. A wireless transceiver circuit comprising:a coil having a first terminal and a second terminal; anda transmission circuit coupled to the first and second terminals, when a first transmission operation is performed, supply a current in a direction from the first terminal to the second terminal;', 'when a second transmission operation is performed, supply a current in a direction from the second terminal to the first terminal; and', 'when a reception operation is performed, supply a bias voltage to the first and second terminals., 'wherein the transmission circuit is configured to2. The wireless transceiver circuit of claim 1 , wherein the transmission circuit comprises:a first pull-up driver configured to source a current to the first terminal;a first pull-down driver configured to sink a current from the first terminal;a second pull-up driver configured to source a current to the second terminal;a second pull-down driver configured to sink a current from the second terminal; and when the first transmission operation is performed, activate the first pull-up driver and the second pull-down driver;', 'when the ...

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Номер записи: 45
12-02-2015 дата публикации

APPARATUS FOR ACTUATING SHIFT LEVER FOR VEHICLE

Номер: US20150040708A1
Автор: Cho Yang Rae, LEE Chang Hyun, Park Han Gil
Принадлежит:

An apparatus for actuating a shift lever for a vehicle may include a shift pattern unit that has two reference ranges in series at which the position of the shift lever is fixed and a passageway connecting the reference ranges for the shift lever to move, and a driving unit that provides the restoration force to the shift lever to selectively return the shift lever to one of the reference ranges when the shift lever is located on the passageway outside of the reference ranges. 1. An apparatus for actuating a shift lever for a vehicle , the apparatus comprising:a shift pattern unit having two reference ranges in series, at which a position of the shift lever is fixed, and a passageway connecting the reference ranges for the shift lever to move; anda driving unit providing restoration force to the shift lever to selectively return the shift lever to one of the reference ranges when the shift lever is located on the passageway outside of the reference ranges.2. The apparatus according to claim 1 , further comprising:a parking switch to be manipulated by a user; anda control unit controlling the driving unit to forcedly move the shift lever to any one of the two reference ranges with an operation of the driving unit when the parking switch is manipulated.3. The apparatus according to claim 1 , wherein the reference ranges include:a first reference range serving as a parking range; anda second reference range connected with the first reference range.4. The apparatus according to claim 3 , wherein the passageway includes:a forward passageway connected with the first reference range and along which the shift lever is able to move forward by one range stage; anda rearward passageway connected with the second reference range and along which the shift lever is able to move rearward by two range stages.5. The apparatus according to claim 4 , wherein while moving along the forward passageway claim 4 , the shift lever is returned to the first reference range by the driving unit ...

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Номер записи: 46
12-02-2015 дата публикации

STACKED SEMICONDUCTOR APPARATUS

Номер: US20150041971A1
Автор: LEE Chang Hyun
Принадлежит: SK HYNIX INC.

A stacked semiconductor apparatus includes a main die, a plurality of slave dies, and a vertical interposer. The vertical interposer is vertically stacked on the main die. 1. A stacked semiconductor apparatus comprising:a main die;a plurality of slave dies stacked on the main die such that each slave die is parallel to the main die; anda vertical interposer vertically stacked on the main die.2. The stacked semiconductor apparatus according to claim 1 , wherein the vertical interposer is electrically coupled with each of the plurality of slave dies through a bump.3. The stacked semiconductor apparatus according to claim 1 , wherein the vertical interposer is electrically coupled with the main die through a bump.4. The stacked semiconductor apparatus according to claim 1 , wherein the vertical interposer receives a signal from the main die and transmits the signal to each of the plurality of slave dies.5. The stacked semiconductor apparatus according to claim 1 , wherein the vertical interposer comprises:signal paths that electrically couple the main die to each of the plurality of slave dies such that a signal inputted from the main die is transmitted to each of the plurality of slave dies,wherein lengths of the signal paths are substantially equal to one another.6. The stacked semiconductor apparatus according to claim 1 , wherein the vertical interposer comprises:a plurality of data transmission lines that electrically couple the main die to the plurality of slave dies.7. The stacked semiconductor apparatus according to claim 6 , wherein the vertical interposer further comprises:a repeater that drives the plurality of data transmission lines.8. A stacked semiconductor apparatusa main die;a plurality of slave dies sequentially stacked on the main die such that each slave die is parallel to the main die; anda vertical interposer vertically stacked on the main die, and surrounding two or more surfaces of each of the plurality of stacked slave dies.9. The stacked ...

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Номер записи: 47
11-02-2016 дата публикации

METHOD AND DEVICE FOR PROVIDING SECURITY CONTENT

Номер: US20160042166A1
Автор: Jin Young-kyu, KANG Nam-wook, KIM Do-hyoung, KWAK Byeong-hoon, Lee Chang-Hyun, LEE Woo-hyoung, LIM Yong-hyun, Park Yong-gook, RYU Jong-youb
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A method, performed by a device, of providing security content includes receiving a touch and drag input indicating that a user drags a visual representation of a first application displayed on a touch screen of the device to a fingerprint recognition area while the user touches the visual representation of the first application with a finger; performing authentication on a fingerprint of the finger detected on the touch screen using a fingerprint sensor included in the fingerprint recognition area; and when the performing authentication on the fingerprint is successful, displaying the security content associated with the first application on an execution window of the first application. 1. A method , performed by a device , of providing security content , the method comprising:receiving a touch and drag input indicating that a user drags a visual representation of a first application displayed on a touch screen of the device to a fingerprint recognition area while the user touches the visual representation of the first application with a finger;performing authentication on a fingerprint of the finger detected on the touch screen using a fingerprint sensor included in the fingerprint recognition area; andwhen the performing authentication on the fingerprint is successful, displaying the security content associated with the first application on an execution window of the first application.2. The method of claim 1 , wherein the receiving of the touch and drag input comprises: when the fingerprint recognition area is a home button area of the device claim 1 , receiving the touch and drag input dragging the visual representation of the first application to the home button area while the user touches the first application.3. The method of claim 1 , wherein the receiving of the touch and drag input comprises:displaying visual representation of a plurality of applications on the touch screen;receiving an input indicating a user touching the visual representation of a first ...

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Номер записи: 48
06-02-2020 дата публикации

CHEMICALLY MODIFIED ANION EXCHANGE MEMBRANE AND METHOD OF PREPARING THE SAME

Номер: US20200040151A1
Автор: HWANG Jin Pyo, LEE Chang Hyun
Принадлежит:

The present inventive concept relates to a chemically modified anion exchange membrane and a method of preparing the same and, more particularly, an anion exchange membrane in which sulfonic acid groups in a perfluorinated sulfonic acid electrolyte membrane are substituted with anion conductive groups such as ammonium group, phosphonium group, imidazolium group, pyridinium group and sulfonium group, and a method of preparing an anion exchange membrane by chemically modifying sulfonic acid groups in a perfluorinated sulfonic acid electrolyte membrane. 1. A method of preparing an anion exchange membrane characterized by substituting sulfonic acid groups in a perfluorinated sulfonic acid electrolyte membrane with ammonium groups , which are anion-conductive functional groups , the method comprising:a) chlorinating sulfonic acid groups in a perfluorinated sulfonic acid electrolyte membrane;b) nitrating the chlorinated electrolyte membrane;c) aminating the nitrated electrolyte membrane; andd) activating the anion-conductive functional groups by treating the aminated electrolyte membrane under alkaline conditions.2. The method of claim 1 , wherein the perfluorinated sulfonic acid electrolyte membrane is a perfluorinated sulfonic acid ionomer free-standing membrane or a reinforced composite membrane including porous supports.3. The method of claim 2 , wherein the perfluorinated sulfonic acid ionomer is selected from the group consisting of poly(perfluorosulfonic acid)s claim 2 , sulfonic acid-containing-copolymers composed of tetrafluoroethylene and fluorovinylether claim 2 , and their mixtures thereof.4. The method of claim 2 , wherein the porous supports of the reinforced composite membrane are selected from the group consisting of polytetrafluoroethylene claim 2 , poly(vinyl difluoroethylene) claim 2 , polyethylene claim 2 , polypropylene claim 2 , poly(ethylene terephthalate) claim 2 , polyimide and polyamide.5. The method of claim 1 , wherein the chlorination is ...

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Номер записи: 49
07-02-2019 дата публикации

Vertical memory devices

Номер: US20190043885A1
Автор: Chang-Hyun Lee
Принадлежит: SAMSUNG ELECTRONICS CO LTD

According to example embodiments, a vertical memory device includes a low resistance layer on a lower insulation layer, a channel layer on the low resistance layer, a plurality of vertical channels on the channel layer, and a plurality of gate lines. The vertical channels extend in a first direction that is perpendicular with respect to a top surface of the channel layer. The gate lines surround outer sidewalls of the vertical channels, and are stacked in the first direction and are spaced apart from each other.

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Номер записи: 50
18-02-2016 дата публикации

WIRELESS CHIP FOR CHIP-TO-CHIP WIRELESS TRANSFER

Номер: US20160049994A1
Автор: LEE Chang Hyun, Park Chang Kun
Принадлежит:

Provided is a wireless chip for chip-to-chip wireless transfer. A wireless chip for chip-to-chip wireless transfer according to the present invention includes: an antenna used as a wireless transfer path of data or power; a circuit unit providing information about whether there is input/output data; a mode control unit connected with the circuit unit and outputting a first or second level signal in accordance with whether there is input/output data; a data communication unit activated and inputting/outputting the data between the circuit unit and the antenna, only when the first level signal is inputted from the mode control unit; and a power relay unit activated and relays the power between the circuit unit and the antenna, only when the second level signal is inputted from the mode control unit. 1. A wireless chip for chip-to-chip wireless transfer , comprising:an antenna used as a wireless transfer path of data or power;a circuit unit providing information about whether there is input/output data;a mode control unit connected with the circuit unit and outputting a first or second level signal in accordance with whether there is input/output data;a data communication unit activated and inputting/outputting the data between the circuit unit and the antenna, only when the first level signal is inputted from the mode control unit; anda power relay unit activated and relays power between the circuit unit and the antenna, only when the second level signal is inputted from the mode control unit.2. The wireless chip of claim 1 , wherein the power relay unit is a power reception unit receiving AC power that the antenna has wirelessly received claim 1 , converting the AC power into DC power claim 1 , and supplying the DC power to the circuit unit.3. The wireless chip of claim 1 , wherein the power relay unit is a power transmission unit converting DC power supplied from the circuit unit into AC power and transmitting the AC power to the antenna to allow for wireless power ...

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Номер записи: 51
08-05-2014 дата публикации

LEVEL CONVERTER FOR CONTROLLING SWITCH

Номер: US20140125397A1
Автор: LEE Chang Hyun, Park Chang Kun, Yun Suk Hyeon
Принадлежит: SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK

Provided is a power amplifier using a differential structure. The power amplifier includes: first and second transistors whose first terminals are each connected to a first power supply source supplying a first voltage and into which signals having the same size and opposite polarities are input; third and fourth transistors whose first terminals are respectively connected to the first terminals of the first and second transistors; and a fifth transistor whose first terminal is connected to second terminals of the third and fourth transistors and controlling oscillation of the third or fourth transistor. 1. A level converter comprising:a first transistor whose source is connected to a first power supply source supplying a first voltage;a second transistor whose source is connected to the first power supply source and whose gate is connected to a drain of the first transistor;a third transistor whose drain is connected to the drain of the first transistor, whose gate receives a control signal, and whose source is connected to a second power supply source supplying a second voltage; anda fourth transistor whose drain is connected to a drain of the second transistor and a gate of the first transistor, whose gate is connected to the drain of the first transistor and the drain of the third transistor, and whose source is connected to the second power supply source,wherein a switch signal corresponding to a voltage applied to the drain of the second transistor is output to a main switch.2. A level converter comprising:a first transistor whose source is connected to a first power supply source supplying a first voltage;a second transistor whose source is connected to the first power supply source and whose gate is connected to a drain of the first transistor;a third transistor whose drain is connected to the drain of the first transistor, whose gate receives a control signal, and whose source is connected to a second power supply source supplying a first voltage lower than ...

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Номер записи: 52
16-02-2017 дата публикации

WIRELESS TRANSCEIVER CIRCUIT WITH REDUCED AREA

Номер: US20170047779A1
Автор: Cho Hyung-jun, CHOI Jun-Gi, Lee Chang-Hyun, Park Chang-Kun, YOO Jin-Ho, YOON Suk-Hyeon
Принадлежит:

A wireless power transmission/reception system includes a wireless power transmission circuit and a wireless power reception circuit. The wireless power transmission circuit includes an oscillator, a DC-AC converter that converts a direct current to an alternating current and is turned on/off in response to a control signal, a power transmission coil that transmits AC power, a signal reception coil, and a signal receiver that transfers the control signal to the DC-AC converter. The wireless power reception circuit includes a power reception coil, a rectifier that converts an alternating current to a direct current and is turned on or off in response to the control signal, an control signal generator that generates the control signal, a signal transmission coil, and a signal transmitter that transmits the control signal through the signal transmission coil. 18-. (canceled)9. A wireless power transmission circuit comprising:an oscillator;a DC-AC converter configured to convert a direct current into an alternating current in response to a periodic wave generated by the oscillator and to be turned on or off in response to a control signal;a power transmission coil configured to transmit AC power converted by the DC-AC converter;a signal reception coil; anda signal receiver configured to detect a voltage change across a first terminal and a second terminal of the signal reception coil and provide the control signal based on the detected voltage change.10. The wireless power transmission circuit of claim 9 , wherein the DC-AC converter comprises:a first pull-down driver configured to pull-down drive a first terminal of the power transmission coil when the periodic wave is in a first state;a second pull-down driver configured to pull-down drive a second terminal of the power transmission coil when the periodic wave is in a second state; anda switch configured to supply a high voltage to a center terminal of in response to the control signal, the center terminal being ...

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Номер записи: 53
26-02-2015 дата публикации

ANTENNA FOR INTER-CHIP WIRELESS POWER TRANSMISSION

Номер: US20150054710A1
Автор: LEE Chang Hyun, Park Chang Kun
Принадлежит:

Disclosed is an antenna for inter-chip wireless power transmission in a 3D-wireless chip package, wherein the 3D-wireless chip package includes: a first chip transmitting AC power through a transmitting antenna; and a plurality of second chips sequentially stacked on or under the first chip and receiving the AC power from the first chip through receiving antennas, respectively, and the receiving antennas are individually formed on the second chips, respectively, and positioned without vertically overlapping each other over or under the transmitting antenna. 1. An antenna for inter-chip wireless power transmission in a 3D-wireless chip package , wherein the 3D-wireless chip package includes:a first chip transmitting AC power through a transmitting antenna; anda plurality of second chips sequentially stacked on or under the first chip and receiving the AC power from the first chip through receiving antennas, respectively, andthe receiving antennas are individually formed on the second chips, respectively, and positioned without vertically overlapping each other over or under the transmitting antenna.2. The antenna of claim 1 , wherein the receiving antennas have different sizes in accordance with the distances from the transmitting antenna.3. The antenna of claim 2 , wherein the larger the distances from the transmitting antenna claim 2 , the larger the sizes of the receiving antennas.4. The antenna of claim 3 , wherein the sizes of the receiving antennas are proportioned to the squares of the distances from the transmitting antenna.5. The antenna of claim 3 , wherein the sum of the sizes of the receiving antennas is the same as the size of the transmitting antenna. This application claims the priority of Korean Patent Application No. 10-2013-0101079 filed on Aug. 26, 2013, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.1. Field of the InventionThe present invention relates to an antenna for inter-chip wireless ...

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Номер записи: 54
13-02-2020 дата публикации

METAMATERIAL STRUCTURE ANTENNA AND METAMATERIAL STRUCTURE ARRAY

Номер: US20200052405A1
Автор: CHI Sang-Wook, Kwon Sang-Wook, Lee Chang-Hyun, LEE JAE-GON, LEE Jeong-Hae, Park Jae-Hyun, Park Jae-Seok, PARK Sung-bum, Ryu Young-Ho, UM Kwi-Seob
Принадлежит:

In various embodiments, a metamaterial structure antenna may comprise: a feed line for feeding a signal; a ground plane comprising a cross-shaped aperture forming circular polarization on the basis of a magnetic field induced by the fed signal; and a patch plane formed parallel to the ground plane which emits electromagnetic waves on the basis of the circular polarization. 1. A meta-structure antenna comprising:a feed line configured to feed a signal;a ground plane including a cross-shaped aperture, the ground plane being configured to form circularly polarized waves based on a magnetic field induced by the signal; anda patch plane formed parallel to the ground plane, the patch plane being configured to radiate electromagnetic waves based on the circularly polarized waves.2. The meta-structure antenna of claim 1 , further comprising:a plurality of vias formed between the ground plane and the patch plane to produce zeroth-order resonance in the meta-structure antenna.3. The meta-structure antenna of claim 2 , wherein claim 2 , when the patch plane is divided into a plurality of partial patch planes claim 2 , numbers of one or more vias formed between respective partial patch planes and the ground plane are equal to each other.4. The meta-structure antenna of claim 1 , further comprising:a superstrate configured to radiate electromagnetic waves improved in directional gain by adjusting a phase and an amplitude of the radiated electromagnetic waves.5. The meta-structure antenna of claim 4 , wherein the superstrate includes a first cover and a second cover spaced apart from the first cover by a predetermined distance.6. The meta-structure antenna of claim 5 , wherein the first cover and the second cover include a first pattern and a second pattern claim 5 , respectively in order to adjust the phase and the amplitude of the radiated electromagnetic waves.7. The meta-structure antenna of claim 6 , wherein the first pattern and the second pattern have a circular shape.8. ...

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Номер записи: 55
05-03-2015 дата публикации

Semiconductor devices with vertical channel structures

Номер: US20150060977A1
Автор: Chang-Hyun Lee, Jin-Taek Park, Young-woo Park
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Semiconductor devices are provided. The semiconductor devices may include a substrate, a ground selection gate electrode, and a channel structure. The channel structure may extend the ground selection gate electrode in a first direction perpendicular to a top surface of the substrate, and include a channel layer, a channel contact layer, and a stepped portion. The channel contact layer may contact the substrate and include a first width in a second direction perpendicular to the first direction. The channel layer may contact the channel contact layer, include a bottom surface between a bottom surface of the ground selection gate electrode and the top surface of the substrate in the first direction, and include a second width in the second direction different from the first width.

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Номер записи: 56
10-03-2022 дата публикации

MOBILE ELECTRIC LEAKAGE DETECTION DEVICE AND METHOD

Номер: US20220075006A1
Автор: LEE Hyun Chang
Принадлежит:

A mobile earth leaking survey apparatus is provided. The apparatus includes a magnetic field sensor. The apparatus includes a plurality of electrodes configured to be capacitively coupled to ground. The apparatus includes a signal timing unit for finding and setting a time T by analyzing signals input from the magnetic field sensor, wherein the time T matches a signal start time of a survey current transmitter. The apparatus includes a signal detection unit for identifying a polarity and a magnitude of a signal from the magnetic field sensor for a predetermined discrete period of time at a predetermined interval time from the time T. The apparatus includes a potential measuring unit for measuring an earth potential value input from the plurality of electrodes. 1. A mobile earth leaking survey apparatus comprising:a plurality of magnetic field sensors configured to capture magnetic signals around an electric cable in which a survey current signal transmitted by a survey current transmitter flows;a plurality of electrodes each configured to be capacitively coupled to ground and formed as at least some part of a wheel;a signal timing unit for finding and setting a reference time by analyzing the magnetic signal input from one of the plurality of magnetic field sensors;a signal detection unit for measuring the magnetic signal for a predetermined discrete period at a predetermined interval time from the reference time and identifying a polarity and a magnitude of the magnetic signal from the one of the plurality of magnetic field sensors;an electric leakage position determination unit for determining whether the mobile earth leaking survey apparatus is positioned over a buried route of the electric cable by comparison between the at least two magnetic signals each captured by the different magnetic field sensors and each identified by the signal detection unit;a potential measuring unit detecting a first peak rise point location of an earth potential value of an AC mains ...

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Номер записи: 57
20-02-2020 дата публикации

TECHNIQUE FOR CONTROLLING EQUIPMENT BASED ON BIOMETRIC INFORMATION

Номер: US20200057460A1
Автор: JUNG Jae-Ho, KIM Yang-Wook, KWAK Byeong-hoon, Lee Chang-Hyun, Lee Yong-chan
Принадлежит:

This disclosure relates to technologies for a sensor network, machine-to-machine (M2M) communication, machine type communication (MTC), and Internet of Things (IoT). This disclosure can be utilized in intelligent services based on the above technologies, such as smart homes, smart buildings, smart cities, smart cars or connected cars, health care, digital education, retail sales, security and safety related services, etc. This disclosure relates to a method for generating an instruction for controlling equipment on the basis of biometric information, comprising: a step of obtaining at least one biometric information; a step of determining whether to calculate a calorific value by using stored biometric information and the obtained biometric information, and calculating the calorific value by using the stored biometric information and the obtained biometric information according to the determined result; and generating an instruction for controlling the equipment on the basis of the calculated calorific value. 1. A method for control at least one external device based on biometric information by an electronic device , the method comprising:obtaining first biometric information;obtaining first state information related to a body state based on the obtain biometric information and second biometric information stored in a memory of the electronic device;obtaining second state information related to emotional state based on the first biometric information;generating a command for control the at least one external device based on the obtained the first state information and the second state information; andtransmitting the command to the at least one external device.2. The method of claim 1 , wherein further comprising:obtaining a variation ratio of the first biometric information using the second biometric information; andidentifying whether to control the at least one external device based on the second state information and the variation ratio.3. The method of claim 2 ...

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Номер записи: 58
03-03-2016 дата публикации

INVERTER TYPE POWER AMPLIFIER

Номер: US20160065153A1
Автор: LEE Chang Hyun, Park Chang Kun, Park Jong Hoon
Принадлежит:

The present disclosure relates to an inverter type power amplifier. An exemplary embodiment of the present disclosure provides an inverter type power amplifier including: a first transistor including a gate to which an AC type of input signal is applied through an input port, a first terminal connected a power source voltage, and a second terminal connected to an output port; a second transistor including a gate through which the input signal is applied thereto, a first terminal connected to a ground, and a second terminal connected to the output port; a feedback resistor including a first terminal connected to the input port and a second terminal connected to the output port; and an AC blocking block including a first terminal connected to the output port and a second terminal connected to a DC output port. 1. An inverter type power amplifier comprising:a first transistor including a gate to which an AC type of input signal is applied through an input port, a first terminal connected a power source voltage, and a second terminal connected to an output port;a second transistor including a gate through which the input signal is applied thereto, a first terminal connected to a ground, and a second terminal connected to the output port;a feedback resistor including a first terminal connected to the input port and a second terminal connected to the output port; andan AC blocking block including a first terminal connected to the output port and a second terminal connected to a DC output port.2. The inverter type power amplifier of claim 1 ,wherein the output port is connected a DC blocking block.3. The inverter type power amplifier of claim 1 ,wherein the AC blocking block is connected to a gate of a third transistor through the DC output port.4. The inverter type power amplifier of claim 1 ,wherein the inverter type power amplifiers are connected in series in two or more stages.5. The inverter type power amplifier of claim 1 ,wherein the AC blocking block is formed of a ...

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Номер записи: 59
20-02-2020 дата публикации

METHOD AND DEVICE FOR PROVIDING CONTENT

Номер: US20200059677A1
Автор: CHOI Kwang-pyo, Choi Woong-Il, Kim Myung-Ho, KIM Sung-chan, Lee Chang-Hyun, PARK Jeong-Hoon, PARK Pil-kyu, YANG Hee-Chul
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided is a method, performed by a terminal, of providing content includes determining whether at least one content is included in preference content, based on information about the at least one content provided to the terminal and preference information of a user of the terminal about content; content, which is not included in the preference content, is present in the at least one content, transmitting, to a server, a request to change the first content to second content included in the preference content based on previously stored information about the preference content; and outputting the second content received from the server, in response to the request. 1. A method , performed by a terminal , of providing content , the method comprising:determining whether at least one content is included in preference content, based on information about the at least one content provided to the terminal and preference information of a user of the terminal about content;when it is determined that first content, which is not included in the preference content, is present in the at least one content, transmitting, to a server, a request to change the first content to second content included in the preference content based on previously stored information about the preference content; andoutputting the second content received from the server, in response to the request.2. The method of claim 1 , further comprising:generating the preference information of the user about the content based on user information comprising at least one of a profile or an activity history of the user of the terminal.3. The method of claim 1 , whereinthe information about the at least one content comprises at least one of identification information of the at least one content, information about a time when each of the at least one content is provided, or content change information indicating whether the at least one content is changeable to another content.4. The method of claim 1 , whereinthe ...

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Номер записи: 60
10-03-2016 дата публикации

SEMICONDUCTOR APPARATUS AND TEST DEVICE THEREFOR

Номер: US20160069959A1
Автор: KU Young Jun, LEE Chang Hyun
Принадлежит:

A semiconductor apparatus includes a clock enable signal buffer unit configured to receive an input clock enable signal, and generate an output clock enable signal; a buffer control unit configured to generate a buffer enable signal in response to the output clock enable signal and a test enable signal; an input/output buffer unit configured to receive input patterns and generate output patterns; and a compression test unit configured to test the output patterns and the output clock enable signal according to the test enable signal. 1. A semiconductor apparatus comprising:a clock enable signal buffer unit configured to receive an input clock enable signal, and generate an output clock enable signal;a buffer control unit configured to generate a buffer enable signal in response to the output clock enable signal and a test enable signal;an input/output buffer unit configured to receive input patterns and generate output patterns; anda compression test unit configured to test the output patterns and the output clock enable signal according to the test enable signal.2. The semiconductor apparatus according to claim 1 , wherein the buffer control unit generates the buffer enable signal which is independent of a level of the output clock enable signal.3. The semiconductor apparatus according to claim 1 , wherein the compression test unit includes a multiple input signature register.4. The semiconductor apparatus according to claim 1 , wherein the compression test unit comprises:a compressing section configured to compress the output patterns in parallel and generate a compressed signal; anda comparing section configured to compare the compressed signal and a reference signal, and generate a test result signal.5. The semiconductor apparatus according to claim 1 , wherein the input/output buffer unit includes a plurality of input/output buffers claim 1 , and the compression test unit receives in parallel the output patterns respectively outputted from the plurality of input ...

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Номер записи: 61
17-03-2022 дата публикации

ANTENNA DEVICE

Номер: US20220085486A1
Автор: LEE Chang Hyun
Принадлежит:

An antenna device includes a plurality of first antennas for communication in a first frequency band, a first ground plane configured to provide a ground voltage to the first antennas, a plurality of second antennas for communication in a second frequency band, and a second ground plane configured to provide a ground voltage to the second antennas, and the first ground plane and the second ground plane are electrically isolated from each other. 1. An antenna device comprising:a plurality of first antennas for communication in a first frequency band;a first ground plane configured to provide a ground voltage to the first antennas;a plurality of second antennas for communication in a second frequency band; anda second ground plane configured to provide a ground voltage to the second antennas,wherein the first ground plane and the second ground plane are electrically isolated from each other.2. The antenna device of claim 1 , further comprising:a first substrate in which the first antennas are disposed; anda second substrate in which the second antennas are disposed,wherein the first substrate and the second substrate are stacked.3. The antenna device of claim 2 , whereinthe first ground plane is disposed on one surface of the first substrate, andthe second ground plane is disposed on one surface of the second substrate.4. The antenna device of claim 1 , whereinamong the first antennas, one first antenna is disposed to cross another first antenna, andamong the second antennas, one second antenna is disposed to cross another second antenna.5. The antenna device of claim 1 , whereinthe first antennas form a plurality of first antenna structures in which the first antennas are disposed to cross each other,the second antennas form a plurality of second antenna structures in whichthe second antennas are disposed to cross each other, andthe second antenna structures are disposed between the first antenna structures.6. The antenna device of claim 1 , whereinthe first antennas ...

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Номер записи: 62
18-03-2021 дата публикации

CYCLONE DUST COLLECTOR AND VACUUM CLEANER HAVING THE SAME

Номер: US20210076891A1
Автор: HAN Jung Gyun, Kim Shin, LEE Chang Hyun, LEE Won Min
Принадлежит:

Disclosed is a cyclone dust collector in which usability is improved. A vacuum cleaner comprising a cyclone dust collector, wherein the cyclone dust collector includes, a case configured to swirl suctioned air to separate dust from the suctioned air and accommodate the separated dust, a grill assembly separably installed in the case, and a cleaning portion included in the case and configured to remove dust adhered to a surface of the grill assembly when the grill assembly is separated from the case. 1. A vacuum cleaner comprising: a case configured to swirl suctioned air to separate dust from the suctioned air and accommodate the separated dust;', 'a grill assembly separably installed in the case; and', 'a cleaning portion included in the case and configured to remove dust adhered to a surface of the grill assembly when the grill assembly is separated from the case., 'a cyclone dust collector, wherein the cyclone dust collector includes2. The vacuum cleaner of claim 1 , wherein the cleaning portion is integrally formed with the case.3. The vacuum cleaner of claim 1 , wherein the cleaning portion is provided to protrude from an inside surface of the case.4. The vacuum cleaner of claim 1 , wherein an opening through which the grill assembly is inserted is formed in the case.5. The vacuum cleaner of claim 4 , wherein the cleaning portion is provided at an inside surface of a cover forming the opening.6. The vacuum cleaner of claim 1 , wherein a diameter of the opening is the same as a diameter of the grill assembly inserted into the case.7. The vacuum cleaner of claim 1 , wherein the cleaning portion is provided to come into contact with the surface of the grill assembly.8. The vacuum cleaner of claim 1 , wherein the grill assembly includes:a grill portion in which an air passing hole is formed and which is accommodated in the case; anda handle provided at one side of the grill portion.9. The vacuum cleaner of claim 8 , wherein claim 8 , when the grill assembly is ...

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Номер записи: 63
12-06-2014 дата публикации

STROKE SENSOR FOR BRAKE PEDAL DEVICE

Номер: US20140157942A1
Автор: LEE Chang Hyun, PARK Joon Young
Принадлежит:

A sensor, in particular a stroke sensor, for a brake pedal device is provided that prevents distortion of the pedal arm from affecting the reliability of the output rotational values. In particular, the sensor is mount on one side of a frame coaxially with a hinged shaft via bracket. A sensor lever is then connected to a rotational shaft of the sensor on one end thereof, and a pin arm is connected to the hinged shaft on one end of the pin arm. Additionally, one side of a sensor pin is connected to another end of the sensor lever and another side of the sensor pin is connected to another end of the pin arm. As a result, distortion to the pedal arm does not affect the values propagated by the sensor. 1. A brake pedal device comprising:a pedal arm installed on a hinged shaft mounted within a frame so that both ends are rotatablea sensor mounted on one side of the frame coaxially with the hinged shaft via a bracket;a sensor lever that is connected to a rotational shaft of the sensor on one end thereof;a pin arm that is connected to the hinged shaft on one end thereof; anda sensor pin that is connected to another end of the sensor lever on one side of the sensor pin and is connected to another end of the pin arm on another side of the sensor pin.2. The stroke sensor for a brake pedal device of claim 1 , wherein the sensor lever includes a groove into which one side of the sensor pin is inserted that is formed on another end of the sensor lever and is combined with the sensor pin by an insertion method.3. The stroke sensor for a brake pedal device of claim 1 , wherein the pin arm is disposed a predetermined distance from the pedal arm and is fixed to an external circumference of the hinged shaft.44. The stroke sensor for a brake pedal device of claim 1 , wherein the pedal arm and the sensor pin I are prevented from coming in contact with each other.. A sensor mounted to a brake pedal device of a vehicle comprising:a sensor lever that is connected to a rotational shaft of ...

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Номер записи: 64
12-06-2014 дата публикации

NON-VOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE SAME

Номер: US20140160854A1
Автор: Choi Jung-Dal, Lee Chang-Hyun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A non-volatile memory device includes a semiconductor substrate and a tunnel insulating layer and a gate electrode. A multiple tunnel insulation layer with a plurality of layers, a charge storage insulation layer, and a multiple blocking insulation layer with layers are sequentially stacked between the gate electrode and the tunnel insulating layer. A first diffusion region and a second diffusion region in the semiconductor substrate are adjacent to opposite respective sides of the gate electrode. When a voltage is applied to the gate electrode and the semiconductor substrate to form a voltage level difference therebetween, a minimum field in the tunnel insulation layer is stronger than in the blocking insulation layer. A minimum field at a blocking insulation layer can be stronger than at a tunnel insulation layer, and the migration probability of charges through the tunnel insulation layer can be higher than through the blocking insulation layer. 1. A non-volatile memory device comprising:a semiconductor substrate;a gate electrode on the semiconductor substrate;a multiple tunnel insulation layer with a plurality of layers, a charge storage insulation layer, and a multiple blocking insulation layer with a plurality of layers are sequentially stacked between the gate electrode and the semiconductor substrate; anda first diffusion region and a second diffusion region in the semiconductor substrate adjacent to opposite respective sides of the gate electrode,wherein when a voltage is applied to the gate electrode and the semiconductor substrate to form a voltage level difference therebetween, a minimum field in the tunnel insulation layer is stronger than a minimum field in the blocking insulation layer.2. The non-volatile memory device of claim 1 , wherein the blocking insulation layer comprises at least one insulation layer having a higher dielectric constant than a highest dielectric constant of insulation layers of the tunnel insulation layer.3. The non-volatile ...

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Номер записи: 65
30-03-2017 дата публикации

TRANSMISSION DEVICE FOR VEHICLE

Номер: US20170089453A1
Автор: Cho Yang Rae, LEE Chang Hyun, Park Han Gil
Принадлежит:

A transmission device for a vehicle includes an interface body having a lever module which includes a shift knob and an electric device. An upper portion of a main body is replaceably assembled with the interface body. The interface body and the main body are separately provided and assembled each other to be used as the common shift lever system and to be applied to all kinds of vehicles even to a new car, thereby saving the development cost. 1. A transmission device for a vehicle , comprising:an interface body having a lever module which includes a shift knob and an electric device; anda main body at an upper portion of which the interface body is replaceably assembled,wherein the upper portion of the main body has sliding grooves formed horizontally at opposite sides thereof, and the interface body has sliding protrusions protruding at a lower portion thereof and inserted into the sliding grooves.2. The transmission device of claim 1 , wherein the transmitting module is a power generator installed in the main body and receives a current to radiate an electromagnetic wave to outside claim 1 , and the lever module includes a power receiver which receives the electromagnetic wave sent from the power generator.3. A transmission device for a vehicle claim 1 , comprising:an interface body having a lever module which includes a shift knob and an electric device and having a power receiver which receives an electromagnetic wave from outside; anda main body of which the interface body is assembled at the upper portion, the main body having a power generator which receives a current to radiate the electromagnetic wave to outside such that the power is supplied to the power receiver. This application is a Divisional Application of U.S. patent application Ser. No. 14/711,719, filed on May 13, 2015, which in turn claims the benefit of priority to Korean Patent Application No. 10-2014-0156083, filed on Nov. 11, 2014, the entire contents of which Applications are incorporated ...

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Номер записи: 66
12-05-2022 дата публикации

TIRE COMPOSITION

Номер: US20220145074A1
Автор: LEE Hyun Chang
Принадлежит:

The present disclosure relates to a method and manufacturing method for a tire tread composition having absorption properties with high electric conductivity and excellent wear resistance. Specifically, the present disclosure relates to the fabrication of a tire composition to be used as a non-pneumatic tire, the tire composition can be used as a mobile electrode with a water supply means that can identify the location of defects in the buried conductor using the tire electrode manufacturing with improved conductivity and contact resistance with the ground even though the tire compound has wear resistance by lowering the water swelling rate compared to the previous technology. 1. A tire electrode comprising:a polar rubber having an amount of 10 to 100 parts by weight of based on 100 parts by weight of the total rubber component;a water swelling material having an amount of 1 to 10 parts by weight of based on 100 parts by weight of the total rubber component;a carbon black having an amount of 5 to 30 parts by weight of based on 100 parts by weight of the total rubber component; anda silica having an amount of 2 to 10 parts by weight of based on 100 parts by weight of the total rubber component,wherein the tire electrode is made of a conductive hydrophilic tire composition,wherein the tire electrode is configured to form a groove in a direction perpendicular to an outer circumferential surface of the tire electrode, to form a water film during movement,wherein the tire electrode is prepared by the steps of,forming the conductive hydrophilic tire composition into strips before curing,laminating the strips in a plurality of layers,embedding an electric wire between the strips and connecting to a measuring device.2. The tire electrode of claim 1 , wherein the tire electrode is attached to a traction type device claim 1 , by reducing tire friction resistance due to weight reduction to improve a wear rate.3. The tire electrode of claim 1 , wherein the tire electrode is ...

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Номер записи: 67
16-04-2015 дата публикации

APPARATUS FOR OPERATING A SHIFT LEVER FOR A VEHICLE

Номер: US20150101439A1
Автор: Cho Yang Rae, LEE Chang Hyun, Park Han Gil
Принадлежит:

An apparatus for operating a shift lever for a vehicle includes: a shift lever pattern part that includes a plurality of reference ranges in which a position of the shift lever is fixed, a parking range, and a shift lever moving path along which the reference ranges and the parking range are connected to one another; and a driving part that applies returning force to the shift lever so as to return the shift lever to the reference ranges if the shift lever deviates from the reference ranges and is located in the shift lever moving path. 1. An apparatus for operating a shift lever for a vehicle , the apparatus comprising:a shift lever pattern part that includes a plurality of reference ranges in which a position of the shift lever is fixed, a parking range, and a shift lever moving path along which the reference ranges and the parking range are connected to one another; anda driving part that applies returning force to the shift lever so as to return the shift lever to the reference ranges if the shift lever deviates from the reference ranges and is located in the shift lever moving path.2. The apparatus according to claim 1 , further comprising:a parking switch operated by a driver; anda control unit that controls the driving part so that the shift lever is forced to move to the parking range by the operation of the driving part when the parking switch is pressed.3. The apparatus according to claim 1 , wherein the plurality of reference ranges includes a first reference range and a second reference range connected to the first reference range.4. The apparatus according to claim 3 , wherein a forward direction path that is connected to the first reference range and allows the shift lever to move by one section in the forward direction is formed claim 3 , and a reverse direction path that is connected to the second reference range and allows the shift lever to move by one section in the reverse direction is formed.5. The apparatus according to claim 4 , wherein if the ...

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Номер записи: 68
03-07-2014 дата публикации

SWITCH APPARATUS OF VEHICLE

Номер: US20140183013A1
Автор: Cho Yang Rae, KIM Dong Hwan, Kim Eun Sik, LEE Chang Hyun, Min Jeong Seon, Park Young Je
Принадлежит:

Disclosed is a switch apparatus of a vehicle that includes a switch body that is connected to a connector of an electronic apparatus and includes a relay board disposed in an inner space thereof. The apparatus further includes a coupling portion disposed on a bottom of the switch body, formed by a conductor, and coupled to a fixation bracket. Additionally, an earth member includes a base formed by the conductor and is disposed in a lower part of the inner space of the switch body, and coupled on the top of the coupling portion and a clamping bar respectively extended upward at both sides of the base and coupled with an earth terminal formed on the bottom of the relay board. 1. A switch apparatus for a vehicle , comprising:a switch body connected to a connector of an electronic apparatus, wherein the switch body includes a relay board disposed in an inner space thereof;a coupling portion disposed on a bottom of the switch body, formed by a conductor, and coupled to a fixation bracket; andan earth member including a base formed by the conductor, disposed in a lower part of the inner space of the switch body, and coupled on a top of the coupling portion and a clamping bar respectively extended upward at both sides of the base and coupled with an earth terminal formed on the bottom of the relay board.2. The switch body of a vehicle of claim 1 , further comprising:a plurality of connection lines that electrically connect the connector and the relay board are embedded in the switch body.3. The switch body of a vehicle of claim 1 , further comprising:a fitting protrusion that protrudes at a lower side of the relay board and a coil portion is coupled to the fitting protrusion.4. The switch body of a vehicle of claim 1 , further comprising:an extension portion that extends in a downward direction at lower left and right ends of the relay board is disposed in the relay board, wherein the earth terminal is disposed in the extension portion and is coupled by the clamping bar of ...

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Номер записи: 69
13-04-2017 дата публикации

SEMICONDUCTOR DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME

Номер: US20170103787A1
Автор: LEE Chang Hyun
Принадлежит:

A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs a power supply voltage and first data. The second semiconductor device generates a control voltage whose level is adjusted in response to the power supply voltage. The second semiconductor device also receives the first data to generate second data having a swing width different from a swing width of the first data. The second data being driven is controlled by the control voltage. 1. A semiconductor system comprising:a first semiconductor device suitable for outputting a power supply voltage and first data; anda second semiconductor device suitable for generating a control voltage whose level is adjusted in response to the power supply voltage and for receiving the first data to generate second data having a swing width different from a swing width of the first data,wherein the second data being driven is controlled by the control voltage.2. The semiconductor system of claim 1 , wherein the first data has a first swing width and the second data has a second swing width.3. The semiconductor system of claim 2 , wherein the first swing width corresponds to a level difference between the power supply voltage and a ground voltage.4. The semiconductor system of claim 2 , wherein the second swing width is set to be less than the first swing width.5. The semiconductor system of claim 1 , wherein the level of the control voltage is higher than a level of the power supply voltage.6. The semiconductor system of claim 1 , wherein the second semiconductor device includes:a variable voltage generation circuit suitable for dividing the power supply voltage to generate a variable voltage; anda control voltage generation circuit suitable for generating the control voltage, the level of which is adjusted in response to the variable voltage.7. The semiconductor system of claim 6 , wherein the control voltage generation circuit includes:a control ...

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Номер записи: 70
19-04-2018 дата публикации

MOBILE ELECTRIC LEAKAGE DETECTION DEVICE AND METHOD

Номер: US20180106847A1
Автор: LEE Hyun Chang
Принадлежит:

A method for detecting an electric leakage point without interrupting a power supply is provided. The method includes transmitting a unipolar direct current (DC) survey voltage signal to an electric wire of the power supply. The method includes transmitting a chain of electromagnetic wave signals generated around the electric wire to synchronize a reference time to measure an earth potential of the unipolar DC voltage signal and capture an electromagnetic tracking signal. The method includes tracing a buried route of the electric wire by analyzing the electromagnetic tracking signal according to the reference time. The method includes measuring the earth potential of the unipolar DC voltage signal on the ground according to the reference time. The method includes locating the electric leakage point by identifying a polarity of the unipolar DC voltage signal. 1. A method for detecting an electric leakage point without interrupting a power supply , the method comprising:transmitting a unipolar direct current (DC) survey voltage signal to an electric wire of the power supply;transmitting a chain of electromagnetic wave signals generated around the electric wire to synchronize a reference time to measure an earth potential of the unipolar DC voltage signal and capture an electromagnetic tracking signal;tracing a buried route of the electric wire by analyzing the electromagnetic tracking signal according to the reference time;measuring the earth potential of the unipolar DC voltage signal on the ground according to the reference time; andlocating the electric leakage point by identifying a polarity of the unipolar DC voltage signal.2. The method according to claim 1 , further comprising:measuring the earth potential at the point on the ground determined as the electromagnetic tracking signal at a location where a weaker electromagnetic signal detected in between two stronger oppositely signed electromagnetic signals; andanalyzing information contained in the unipolar DC ...

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Номер записи: 71
19-04-2018 дата публикации

MOBILE ELECTRIC LEAKAGE DETECTION DEVICE AND METHOD

Номер: US20180106848A1
Автор: LEE Hyun Chang
Принадлежит:

A mobile earth leaking survey apparatus is provided. The apparatus includes a magnetic field sensor. The apparatus includes a plurality of electrodes configured to be capacitively coupled to ground. The apparatus includes a signal timing unit for finding and setting a time T by analyzing signals input from the magnetic field sensor, wherein the time T matches a signal start time of a survey current transmitter. The apparatus includes a signal detection unit for identifying a polarity and a magnitude of a signal from the magnetic field sensor for a predetermined discrete period of time at a predetermined interval time from the time T. The apparatus includes a potential measuring unit for measuring an earth potential value input from the plurality of electrodes. 1. A mobile earth leaking survey apparatus comprising:a magnetic field sensor;a plurality of electrodes configured to be capacitively coupled to ground;a signal timing unit for finding and setting a time T by analyzing signals input from the magnetic field sensor, wherein the time T matches a signal start time of a survey current transmitter;a signal detection unit for identifying a polarity and a magnitude of a signal from the magnetic field sensor for a predetermined discrete period of time at a predetermined interval time from the time T; anda potential measuring unit for measuring an earth potential value input from the plurality of electrodes.2. The mobile earth leaking survey apparatus according to claim 1 , wherein the potential measuring unit is synchronized with the time T to identify a polarity and a magnitude of an earth potential from the plurality of electrodes for the predetermined discrete period time at the predetermined interval time from the time T.3. The mobile earth leaking survey apparatus according to claim 1 , wherein the signal detection unit is configured to simultaneously identify the polarity and the magnitude of the signal from each of a plurality of the magnetic sensors including ...

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Номер записи: 72
28-04-2016 дата публикации

APPARATUS AND METHOD FOR SHIFT PERCEPTION

Номер: US20160116058A1
Автор: Lee Chang-Hyun, PARK Han-Gil, SONG Ki-Young
Принадлежит:

An apparatus for shift perception includes a transmission and a vehicle shift controller configured to perform shifting of the transmission. An electronic shift operator is configured to generate shift stage information by checking a state of a present shift stage or shift planning stage information by a shifting operation of a driver. An electronic braille module is configured to output the shift stage information or the shift planning stage information in braille information. 1. An apparatus for shift perception comprising:a transmission;a vehicle shift controller configured to perform shifting of the transmission;an electronic shift operator configured to generate shift stage information by checking a state of a present shift stage or to generate shift planning stage information by manual shifting of a driver; andan electronic braille module configured to output the shift stage information or the shift planning stage information in braille information.2. The apparatus for shift perception of claim 1 , further comprising bone conduction earphones that output the shift stage information or the shift planning stage information.3. The apparatus for shift perception of claim 1 , further comprising a cluster that outputs the shift stage information or the shift planning stage information.4. The apparatus for shift perception of claim 1 , wherein the shift stage information or the shift planning stage information is converted into the braille information only in a start-up state of a vehicle.5. The apparatus for shift perception of claim 1 , wherein the shift stage information or the shift planning stage information is converted into the braille information only to generate final shift stage information during a predefined time after a vehicle stops.6. The apparatus for shift perception of claim 1 , wherein the vehicle shift controller and the electronic shift operator communicate using a controller area network (CAN).7. The apparatus for shift perception of claim 2 , ...

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Номер записи: 73
26-04-2018 дата публикации

MOBILE ELECTRIC LEAKAGE DETECTION DEVICE AND METHOD

Номер: US20180113162A1
Автор: LEE Hyun Chang
Принадлежит:

A survey voltage transmitter includes a diode, a resistor, a first connection wire connected to a hot wire of AC power at a place, a second connection wire connected to a neutral wire of the AC power, a switching unit for turning on/off a circuit connected between the hot wire and the neutral wire to control a current flow through the diode and the resistor connected in series, a switching control unit for controlling a switch time of the circuit by providing a time control signal to the switching unit to turn on the circuit at a predetermined phase angle of the AC power and turn off the circuit before a half wave extinction phase angle of the AC power, and a coding unit for controlling the switching control unit to generate the current flow or not and for generating a series of logic values corresponding to the current flow. 1. A survey voltage transmitter comprising:a diode;a resistor;a first connection wire connected to a hot wire of AC power at a place;a second connection wire connected to a neutral wire of the AC power at the place;a switching unit for turning on and off a circuit connected between the hot wire and the neutral wire to control a current flow through the diode and the resistor connected in series;a switching control unit for controlling a switch time of the circuit by providing a time control signal to the switching unit to turn on the circuit at a predetermined phase angle of the AC power and turn off the circuit before a half wave extinction phase angle of the AC power; anda coding unit for controlling the switching control unit to generate the current flow or not and for generating a series of logic values corresponding to the current flow.2. The survey voltage transmitter according to claim 1 , further comprising an interface unit for synchronizing the switch time with an associated device through communications.3. The survey voltage transmitter according to claim 1 , wherein the switching unit has three switching circuits corresponding to ...

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Номер записи: 74
24-07-2014 дата публикации

VERTICAL TYPE SEMICONDUCTOR DEVICES INCLUDING A METAL GATE AND METHODS OF FORMING THE SAME

Номер: US20140203346A1
Автор: Lee Chang-Hyun
Принадлежит:

Vertical type semiconductor devices including a metal gate and methods of forming the vertical type semiconductor devices are provided. The vertical type semiconductor devices may include a channel pattern. The vertical type semiconductor devices may also include first and second gate patterns sequentially stacked on a sidewall of the channel pattern. The first and second gate pattern may include first and second metal elements, respectively and the second gate pattern may have a resistance lower than a resistance of the first gate pattern. 1. A vertical type semiconductor device , comprising:a channel pattern extending in a first direction that is perpendicular to an upper surface of a substrate;a tunnel insulating layer, a charge storing layer and a blocking dielectric layer sequentially stacked on a sidewall of the channel pattern;a first gate pattern stacked on the blocking dielectric layer, the first gate pattern comprising a first metal and having a first resistance; anda second gate pattern stacked on the first gate pattern, the second gate pattern comprising a second metal and having a second resistance lower than the first resistance.2. The vertical type semiconductor device of claim 1 , further comprising a third gate pattern comprising an impurity doped polysilicon between the first and second gate patterns.3. The vertical type semiconductor device of claim 1 , wherein the first gate pattern comprises a metal element selected from the group consisting of titanium claim 1 , tantalum claim 1 , ruthenium and tungsten claim 1 , or comprises a material comprising at least one product obtained from a reaction of the metal element with oxygen claim 1 , carbon and/or nitrogen.4. The vertical type semiconductor device of claim 1 , wherein the second gate pattern comprises at least one material selected from the group consisting of tungsten claim 1 , tungsten silicide claim 1 , cobalt claim 1 , cobalt silicide claim 1 , nickel and nickel silicide.5. The vertical ...

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Номер записи: 75
16-04-2020 дата публикации

APPARATUS FOR PREVENTING FORCIBLE SEPARATION OF SHIFT CABLE

Номер: US20200114870A1
Автор: LEE Chang Hyun, Min Jeong Seon
Принадлежит:

An apparatus is provided to inhibit forcible separation of a shift cable coupled to a shift lever by a cover member combined with a shifting device which includes a shift lever housing and the shift lever , thereby preventing forcible changing of a current gear from a P-stage to a N-stage in a vehicle. Accordingly, it is possible to help prevent theft of the vehicle. 1. An apparatus for preventing forcible separation of a shift cable , the apparatus comprising:a cover member combined with a shifting device and configured to cover an end of a shift cable which is connected to the shifting device; anda fastener fixing the cover member to the shifting device.2. The apparatus of claim 1 , wherein the shifting device includes:a shift lever housing fixed at a side of a seat for a driver of a vehicle; anda shift lever rotatably coupled to the shift lever housing, andwherein the shift cable connects the shift lever and a transmission of the vehicle to each other.3. The apparatus of claim 2 , wherein the end of the shift cable is coupled to the shift lever claim 2 , a cable socket is disposed at a predetermined distance from the end claim 2 , andwherein the cable socket is fixed to the shift lever housing.4. The apparatus of claim 3 , wherein the cover member is combined with the shift lever housing and configured to cover both the end of the shift cable and the cable socket.5. The apparatus of claim 1 , wherein the cover member is made of steel to inhibit damage and breakage due to an external force.6. The apparatus of claim 3 , wherein the cover member is vertically combined with the shift lever housing claim 3 , andwherein a guide protrusion and a guide hole are formed at the shift lever housing and the cover member, respectively, along an assembly direction.7. The apparatus of claim 3 , wherein a space configured to allow the shift cable to be moved when the shift lever is operated is defined between the shift lever housing and the cover member such that interference ...

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Номер записи: 76
10-05-2018 дата публикации

Brainwave sensor unit and brainwave measurement device using same

Номер: US20180125386A1
Автор: Chang-Hyun Lee, Hee-Jae Jo, Jae-Min Jung, Jang-beom YANG, Jun-Ho Koh, Jun-Hyung Park, Se-Hoon Lim, Yong-Hyun Lim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Disclosed are a brainwave sensor unit and a brainwave measurement apparatus using the same. The brainwave sensor unit includes first and second contact electrodes located on a supporter, the first contact electrode obtains a brainwave signal from a living body, and the second contact electrode is spaced apart and electrically insulated from the first contact electrode and is grounded.

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Номер записи: 77
16-04-2020 дата публикации

IMAGE PROCESSING METHOD AND APPARATUS

Номер: US20200118241A1
Автор: CHOI Kwang-pyo, Kim Hyun-jung, Lee Chang-Hyun, ZAKHARCHENKO Vladyslav
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided is an image processing method including: generating an omnidirectional spherical image; determining information regarding a director's view that indicates some regions of the omnidirectional spherical image; generating a projection image by projecting the omnidirectional spherical image to a development view of a polyhedron; dividing, from the projection image, a director's view projection image corresponding to the director's view, based on the information regarding the director's view; reshaping the director's view projection image into a director's view rectangular image by moving a location of at least one of pixels of the director's view projection image; and generating a bitstream which the director's view rectangular image is encoded into. 1. An image processing method comprising:generating an omnidirectional spherical image;determining information regarding a director's view that indicates some regions of the omnidirectional spherical image;generating a projection image by projecting the omnidirectional spherical image to a development view of a polyhedron;dividing, from the projection image, a director's view projection image corresponding to the director's view, based on the information regarding the director's view;reshaping the director's view projection image into a director's view rectangular image by moving a location of at least one of pixels of the director's view projection image; andgenerating a bitstream which the director's view rectangular image is encoded into.2. The image processing method of claim 1 , whereinthe information regarding the director's view comprises a direction vector indicating a center of the director's view from a center of the omnidirectional spherical image, information regarding a horizontal length of the director's view, and information regarding a vertical length of the director's view.3. The image processing method of claim 1 , whereinthe information regarding the director's view is included in Supplemental ...

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Номер записи: 78
12-05-2016 дата публикации

TRANSMISSION DEVICE FOR VEHICLE

Номер: US20160131246A1
Автор: Cho Yang Rae, LEE Chang Hyun, Park Han Gil
Принадлежит:

A transmission device for a vehicle includes an interface body having a lever module which includes a shift knob and an electric device. An upper portion of a main body is replaceably assembled with the interface body. The interface body and the main body are separately provided and assembled each other to be used as the common shift lever system and to be applied to all kinds of vehicles even to a new car, thereby saving the development cost. 1. A transmission device for a vehicle , comprising:an interface body having a lever module which includes a shift knob and an electric device; anda main body at an upper portion of which the interface body is replaceably assembled.2. The transmission device of claim 1 , wherein the lever module is configured of the shift knob claim 1 , an indicator claim 1 , and illumination.3. The transmission device of claim 1 , wherein the upper portion of the main body has sliding grooves formed horizontally at opposite sides thereof claim 1 , and the interface body has sliding protrusions protruding at a lower portion thereof and inserted into the sliding grooves.4. The transmission device of claim 1 , wherein the main body includes a hook protruding upwardly along a periphery at the upper portion thereof claim 1 , and the interface body has a locking groove claim 1 , to which the hook is inserted and locked claim 1 , formed at a lower portion thereof.5. The transmission device of claim 1 , wherein the transmitting module is a main connector disposed at the upper portion of the main body to receive and supply a current claim 1 , and the lever module includes a connection connector disposed at a lower portion of the interface body and corresponding to the main connector such that the main body receives the current by connecting the connection connector to the main connector when the interface body is assembled with the main body.6. The transmission device of claim 1 , wherein the transmitting module is a power generator installed in the ...

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Номер записи: 79
21-05-2015 дата публикации

SHIFTING APPARATUS FOR VEHICLE

Номер: US20150135878A1
Автор: Cho Yang Rae, LEE Chang Hyun, Park Han Gil, SONG Ki Young
Принадлежит: HYUNDAI MOTOR COMPANY

A shifting apparatus for a vehicle may include a lever position guide that is provided inside a gear lever box at which a gear lever is located, and has a reference position and multiple gear positions connected to the reference position, an elastic part engaged to the gear lever and the gear lever box and configured to return the gear lever to the reference position when the gear lever deviates from the reference position and thus is located at any one of the multiple gear positions, and a controller that shifts a gear range according to a preset shifting order when the gear lever moves between the reference position and the multiple gear positions, and shifts the gear range to a preset gear range when the gear lever is located at any one of the multiple gear positions for a longer time than a setting time. 1. A shifting apparatus for a vehicle comprising:a lever position guide that is provided inside a gear lever box at which a gear lever is located, and has a reference position at which the gear lever box is located and multiple gear positions connected to the reference position so as to allow a movement of the gear lever;an elastic part that is engaged to the gear lever and the gear lever box and is configured to return the gear lever to the reference position when the gear lever deviates from the reference position and thus is located at any one of the multiple gear positions; anda controller that shifts a gear range according to a preset shifting order when the gear lever moves between the reference position and the multiple gear positions, and shifts the gear range to a preset gear range when the gear lever is located at any one of the multiple gear positions for a longer time than a setting time.2. The shifting apparatus according to claim 1 ,wherein the reference position includes a first reference position and a second reference position, both of which are connected to each other,wherein at least one of the gear positions is provided in a forward direction ...

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Номер записи: 80
21-05-2015 дата публикации

STRUCTURE FOR MOUNTING PLANTABLE SHIFT LEVER ONTO BRACKET

Номер: US20150135879A1
Автор: Cho Yang-Rae, JEONG Won-Jin, KIM Deok-Ki, Kim Sang-Yoon, KWON Min-Keun, Lee Chang-Hyun, MIN Jeong-Seon
Принадлежит:

A structure for mounting a plantable shift lever onto a bracket may include an extending part that protrudes from a front end of the plantable shift lever to extend forward, a dented part formed by denting a front end of the bracket forward to receive the extending part, a first penetrating hole formed to penetrate a rear end of the plantable shift lever in a left and right direction, a second penetrating hole formed to penetrate a rear end of the bracket in the left and right direction and positioned to correspond to the first penetrating hole, and a pin to be inserted into the first penetrating hole and the second penetrating hole to fix the plantable shift lever to the bracket. The plantable shift lever may be coupled to the bracket by inserting the extending part into the dented part and inserting the pin into the first penetrating hole and the second penetrating hole. 1. A structure for mounting a plantable shift lever onto a bracket , wherein the structure couples the bracket of various heights and designs to a lower end of the plantable shift lever , and the plantable shift lever includes a lever shaft that operably changes a gear shift level of a vehicle , the structure comprising:an extending part that protrudes from a front end of the plantable shift lever to extend forward;a dented part that is formed by denting a front end of the bracket forward so as to receive the extending part;a first penetrating hole that is formed to penetrate a rear end of the plantable shift lever in a left and right direction;a second penetrating hole that is formed to penetrate a rear end of the bracket in the left and right direction and positioned to correspond to the first penetrating hole; anda pin that is to be inserted into the first penetrating hole and the second penetrating hole to fix the plantable shift lever to the bracket,wherein the plantable shift lever is coupled to the bracket by inserting the extending part into the dented part and inserting the pin into the ...

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Номер записи: 81
21-05-2015 дата публикации

VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

Номер: US20150137216A1
Автор: Eun Dong-Seog, Lee Chang-Hyun, LEE Joon-Hee, Lee Seok-Won
Принадлежит:

A vertical memory device includes a substrate, a channel, gate lines and a connecting portion. A plurality of the channels extend in a first direction which is vertical to a top surface of a substrate. A plurality of the gate lines are stacked in the first direction to be spaced apart from each other and extend in a second, lengthwise direction, each gate line intersecting a set of channels and surrounding outer sidewalls of each channel of the set of channels. The gate lines forms a stepped structure which includes a plurality of vertical levels. A connecting portion connects a group of gate lines of the plurality of gate lines located at the same vertical level, the connecting portion diverging from the second direction in which the gate lines of the group of gate lines extend. 1. A vertical memory device , comprising:a substrate;a plurality of channels extending in a first direction which is vertical to a top surface of the substrate;a plurality of gate lines stacked in the first direction to be spaced apart from each other and extending in a second, lengthwise direction, each gate line intersecting a set of channels and surrounding outer sidewalls of each channel of the set of channels, wherein the gate lines form a stepped structure which includes a plurality of vertical levels; anda connecting portion which connects a group of gate lines of the plurality of gate lines located at the same vertical level, the connecting portion diverging from the second direction in which the gate lines of the group of gate lines extend.2. The vertical memory device of claim 1 , wherein the substrate includes a cell region and an extension region at a lateral portion of the cell region claim 1 , andwherein the connecting portion is disposed on the extension region.3. The vertical memory device of claim 2 , wherein a plurality of the connecting portions are provided at different vertical levels and overlap each other in the first direction.4. The vertical memory device of claim 1 ...

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Номер записи: 82
23-04-2020 дата публикации

METHOD OF PREPARING ION-EXCHANGE MEMBRANE USING CHEMICAL MODIFICATION AND ION-EXCHANGE MEMBRANE PREPARED THEREBY

Номер: US20200122093A1
Автор: HWANG Jin Pyo, LEE Chang Hyun, OH Chang Hoon
Принадлежит:

The present inventive concept relates to a method of preparing an ion-exchange membrane using a chemical modification and an ion-exchange membrane prepared thereby. More specifically, the present inventive concept relates to a method of preparing an ion-exchange membrane, which is characterized by modifying sulfonic acid groups of a perfluorinated sulfonic acid electrolyte membrane with carboxyl groups and includes chlorinating sulfonic acid groups of a perfluorinated sulfonic acid electrolyte membrane; nitrilating the chlorinated electrolyte membrane; and hydrolyzing the nitrilated electrolyte membrane, and an ion-exchange membrane chemically modified thereby. 1. A method of preparing a cation-exchange membrane , which is characterized by selectively substituting sulfonic acid groups in a perfluorinated sulfonic acid electrolyte membrane with carboxyl groups , the method comprising:a) chlorinating sulfonic acid groups in a perfluorinated sulfonic acid electrolyte membrane;b) nitrilating the chlorinated electrolyte membrane; andc) hydrolyzing the nitrilated electrolyte membrane.2. The method of claim 1 , wherein claim 1 , in the step a) claim 1 , some of the sulfonic acid groups in the perfluorinated sulfonic acid electrolyte membrane are chlorinated.3. The method of claim 1 , further comprising an additional step to restore some of the sulfonic acid groups prior to the nitrilation in the step b).4. The method of claim 2 , wherein some of the sulfonic acid groups in one side surface of the perfluorinated sulfonic acid electrolyte membrane are chemically substituted with carboxyl groups claim 2 , thereby having double-layered structure.5. The method of claim 1 , wherein all of the sulfonic acid groups in the whole perfluorinated sulfonic acid electrolyte membrane are chemically substituted with carboxyl groups.6. The method of claim 1 , wherein the perfluorinated sulfonic acid electrolyte membrane is a perfluorinated sulfuric acid ionomer free-standing membrane or a ...

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Номер записи: 83
21-05-2015 дата публикации

METHOD AND APPARATUS FOR CONTROLLING HOME DEVICES ON GROUP BASIS IN A HOME NETWORK SYSTEM

Номер: US20150140990A1
Автор: Han Ji-yeon, Kim Chang-Hyun, KIM Kyung-Jae, Lee Chang-Hyun
Принадлежит:

A method and apparatus for controlling home devices on a group basis in a home network system are provided. The method includes collecting operation state information about a plurality of home devices, generating control history information about the plurality of home devices based on the collected operation state information, receiving a group control command for a group of home devices from among the plurality of home devices, the group of home devices being set based on the control history information, and controlling operations of the group of home devices according to the received group control command. 1. A method for controlling home devices on a group basis in a home network system , the method comprising:collecting operation state information about a plurality of home devices;generating control history information about the plurality of home devices based on the collected operation state information;receiving a group control command for a group of home devices from among the plurality of home devices, the group of home devices being set based on the control history information; andcontrolling operations of the group of home devices according to the received group control command.2. The method of claim 1 , wherein the group of home devices satisfies a condition determined based on the control history information.3. The method of claim 2 , wherein the group of home devices satisfying the determined condition includes a group of home devices operating within a predetermined time threshold.4. The method of claim 2 , wherein the group of home devices satisfying the determined condition includes a group of home devices operating together in a specific situation.5. The method of claim 1 , wherein the group of home devices is set from a list of home devices extracted in a descending order of correlations based on the control history information.6. The method of claim 1 , wherein the group of home devices is set from a list of home devices operating within a time ...

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Номер записи: 84
23-04-2020 дата публикации

USER TERMINAL APPARATUS AND MANAGEMENT METHOD OF HOME NETWORK THEREOF

Номер: US20200125224A1
Автор: JOO Ga-hyun, KIM Chang-won, KIM Jin-Sung, Lee Chang-Hyun, LIM Yong-hyun, RYU Jong-youb, Shim Jung-hyun
Принадлежит:

An example user terminal apparatus includes communication circuitry configured to be connected to a home network comprising a plurality of devices; a display configured to display a UI screen for managing the home network; a sensor configured to sense a user manipulation of the UI screen; and processing circuitry configured to change the UI screen displayed on the display according to the user manipulation. The UI screen is one of a plurality of service pages that are changeable according to a user manipulation in a first direction, the plurality of service pages being pages for respectively providing different home network management services. At least one of the plurality of service pages comprises an area that is displayable on the display according to a user manipulation in a second direction. 1: A user terminal apparatus comprising:a communicator configured to communicate with a plurality of devices;a display; and control the display to display a first user interface (UI) comprising a favorite function area; and', 'based on a user manipulation in a first direction being input to the first UI, control the display to display one of a plurality of second UIs, the plurality of second UIs comprising a plurality of function areas for controlling at least one device from among the plurality of devices,, 'a processor configured towherein the favorite function area comprises a function area bookmarked among the plurality of function areas included in the plurality of second UIs.2: The user terminal apparatus of claim 1 , wherein the processor is configured to claim 1 , based on one of the plurality of second UIs being selected claim 1 , control the display to display a function area subordinate to the selected second UI.3: The user terminal apparatus of claim 1 , wherein the processor is configured to claim 1 , based on a user manipulation in a second direction being input to the first UI claim 1 , control the display to display the favorite function area included in ...

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Номер записи: 85
19-05-2016 дата публикации

User terminal apparatus and management method of home network thereof

Номер: US20160139752A1
Автор: Chang-Hyun Lee, Chang-Won Kim, Ga-hyun JOO, Jin-Sung Kim, Jong-youb RYU, Jung-Hyun Shim, Yong-Hyun Lim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An example user terminal apparatus includes communication circuitry configured to be connected to a home network comprising a plurality of devices; a display configured to display a UI screen for managing the home network; a sensor configured to sense a user manipulation of the UI screen; and processing circuitry configured to change the UI screen displayed on the display according to the user manipulation. The UI screen is one of a plurality of service pages that are changeable according to a user manipulation in a first direction, the plurality of service pages being pages for respectively providing different home network management services. At least one of the plurality of service pages comprises an area that is displayable on the display according to a user manipulation in a second direction.

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Номер записи: 86
01-09-2022 дата публикации

ANTENNA MODULE AND ANTENNA DEVICE HAVING THE SAME

Номер: US20220278457A1
Автор: Kim Jung-Hoon, LEE Chang Hyun, Park Dong Wook
Принадлежит:

Disclosed is a 5G NR antenna device. An antenna module includes an antenna material formed of a metal material and having a semi-planar inverted-F antenna (PIFA) structure, and a support formed in the shape of a hexahedron with side and bottom faces that are bent from the antenna material by stamping, wherein the support and the antenna material are formed as an integral body. 1. An antenna module comprising:an antenna material formed of a metal material and having a semi-planar inverted-F antenna (PIFA) structure; anda support formed in the shape of a hexahedron with side and bottom faces that are bent from the antenna material by stamping, wherein the support and the antenna material are formed as an integral body.2. The antenna module of claim 1 , wherein the support comprises:first to fourth skirt patterns bent from four edge portions of the antenna material at a right angle; anda fifth skirt pattern forming the bottom face of the hexahedron,wherein the first to fourth skirt patterns are extended to the antenna material at respective upper ends and separated from each other at both side ends.3. The antenna module of claim 2 , wherein the antenna material is mounted to be spaced apart from a mounting face of a substrate in parallel claim 2 , andthe antenna module is a monopole antenna that is powered by a single feeder formed in the fifth skirt pattern.4. The antenna module of claim 3 , wherein the first skirt pattern forms a front face of the hexahedron and is formed on a left side relative to the feeder.5. The antenna module of claim 4 , wherein the feeder is extended to a lower end of the first skirt pattern.6. The antenna module of claim 3 , wherein the fifth skirt pattern further comprises:a first mounting portion that is mounted on the substrate; anda second mounting portion that is mounted on an additional mounting pattern formed on the substrate.7. The antenna module of claim 6 , wherein the feeder claim 6 , the first mounting portion claim 6 , and the ...

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Номер записи: 87
02-05-2019 дата публикации

METHOD AND APPARATUS FOR ENCODING VIDEO USING VARIABLE PARTITIONS FOR PREDICTIVE ENCODING, AND METHOD AND APPARATUS FOR DECODING VIDEO USING VARIABLE PARTITIONS FOR PREDICTIVE ENCODING

Номер: US20190132587A1
Автор: Chen Jianle, CHO Dae-Sung, HAN Woo-jin, Kim Il-koo, Lee Chang-Hyun, LEE Tammy
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction. 1. A method of decoding video , the method comprising:receiving a bitstream including data of a picture, information about a size of a maximum coding unit, and split information;splitting the picture into a plurality of maximum coding units, including the maximum coding unit, using the information about the size of the maximum coding unit;hierarchically splitting a maximum coding unit among the plurality of maximum coding units into a plurality of coding units based on the split information, wherein the split information indicates whether a coding unit of depth k, where k is integer, is split into coding units of depth k+1;determining one or more prediction units in a coding unit among the plurality coding units using partition type information, performing prediction on a prediction unit among the one or more prediction units in the coding unit; andgenerating a reconstructed coding unit based on the prediction,wherein the partition type information indicates one of a symmetric type and an asymmetric type when a size of the coding unit is larger than a predetermined size.2. A method of encoding video , the method comprising:splitting a picture into a plurality of ...

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Номер записи: 88
28-05-2015 дата публикации

METHOD OF OPERATING NONVOLATILE MEMORY DEVICE

Номер: US20150146489A1
Автор: Fayrushin Albert, Lee Chang-Hyun
Принадлежит:

In a method of operating a nonvolatile memory device having a substrate and first through n-th word lines stacked in a direction perpendicular to the substrate, first through k-th word line voltages are applied to first through k-th word lines, respectively, which are formed adjacent to the substrate, among the first through n-th word lines. (k+1)-th through n-th word line voltages are applied to (k+1)-th through n-th word lines, respectively, which are formed above the first through k-th word lines, among the first through n-th word lines. An erase voltage, which is higher than the first through n-th word line voltages, is applied to the substrate, where n represents an integer equal to or greater than two, and k represents a positive integer smaller than n. Each of the (k+1)-th through n-th word line voltages is lower than each of the first through k-th word line voltages. 1. A method of operating a nonvolatile memory device having a substrate and first through n-th word lines stacked in a direction perpendicular to the substrate , the method comprising:applying first through k-th word line voltages to first through k-th word lines, respectively, which are formed adjacent to the substrate, among the first through n-th word lines, n being an integer equal to or greater than two, k being a positive integer smaller than n;applying (k+1)-th through n-th word line voltages to (k+1)-th through n-th word lines, respectively, which are formed above the first through k-th word lines, among the first through n-th word lines, each of the (k+1)-th through n-th word line voltages being lower than each of the first through k-th word line voltages; andapplying an erase voltage, which is higher than the first through n-th word line voltages, to the substrate.2. The method of claim 1 , wherein the first through k-th word line voltages are positive voltages and the (k+1)-th through n-th word line voltages are ground voltages.3. The method of claim 2 , wherein i-th word line voltage ...

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Номер записи: 89
26-05-2016 дата публикации

APPARATUS FOR MEASURING BIOELECTRICAL SIGNALS

Номер: US20160143554A1
Автор: CHOI Jong-ho, CHUN Hae-in, JO HEE-JAE, Jung Jae-Min, KOH Jun-Ho, Lee Chang-Hyun, LIM SE-HOON, LIM Yong-hyun, Oh Eun-mi, PARK Jun-hyung, YANG Jang-beom
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

An apparatus for measuring bioelectrical signals is provided. The apparatus includes a sensor electrode, a sensor support, and a main body. The sensor electrode has a tapering portion that narrows toward one end and a protruding portion that extends from the one end of the tapering portion, contacts a body part, and senses bioelectrical signals. The sensor support maintains the contact between the sensor electrode and the body part. The main body is connected to the sensor support and is wearable on a living body. 1. An apparatus for measuring bioelectrical signals , the apparatus comprising:a sensor electrode comprising a tapering portion that narrows toward one end and a protruding portion that extends from the one end of the tapering portion and contacts a body part, and senses bioelectrical signals;a sensor support configured to support the sensor electrode to maintain the contact between the sensor electrode and the body part; anda main body connected to the sensor support and being wearable on a living body.2. The apparatus of claim 1 , wherein claim 1 , a gradient of a longitudinal section of an outer surface of the protruding portion is greater than a gradient of a longitudinal section of an outer surface of the tapering portion with respect to a bottom surface of the other end of the tapering portion.3. The apparatus of claim 1 , wherein the protruding portion comprises a flexible material claim 1 , has a flexibility greater than a flexibility of the tapering portion claim 1 , and is bent when contacting the body part so that a side portion of the protruding portion contacts the body part claim 1 , and the tapering portion supports the protruding portion.4. The apparatus of claim 3 , wherein the flexible material is conductive silicon or conductive rubber.5. The apparatus of claim 1 , further comprising an electrode supporter to which the other end of the tapering portion is attached and which is configured to support the sensor electrode claim 1 ,wherein ...

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Номер записи: 90
26-05-2016 дата публикации

AIR BAG APPARATUS FOR VEHICLE

Номер: US20160144820A1
Автор: Choi Jun Yeol, Kim Tae In, LEE Chang Hyun, Shin Hyo Shub, Yoo Jae Haeng
Принадлежит:

An air bag apparatus for a vehicle includes an inflator and a main tube configured to be unfolded toward an occupant of the vehicle by a gas pressure when the inflator explodes. A support tube is coupled to one side of the main tube and configured to be unfolded by being supplied with gas from the main tube. An active vent is configured to be installed in a path which connects the main tube to the support tube and to open and close the path. A controller is configured to control an opening and closing operation of the active vent 1. An air bag apparatus for a vehicle , the apparatus comprising:an inflator;a main tube configured to be unfolded toward an occupant of the vehicle by a gas pressure when the inflator explodes;a support tube coupled to one side of the main tube and configured to be unfolded by being supplied with gas from the main tube;an active vent configured to be installed in a path which connects the main tube to the support tube and to open and close the path; anda controller configured to control an opening and closing operation of the active vent.2. The air bag apparatus of claim 1 , wherein the occupant is a passenger claim 1 , the support tube is coupled to one side of the main tube in a first direction from the passenger's seat to a driver's seat claim 1 , andthe support tube unfolds toward the driver's seat when the active vent is opened.3. The air bag apparatus of claim 1 , wherein the opening and closing operation of the active vent depends on a vehicle velocity.4. The air bag apparatus of claim 1 , wherein the opening and closing operation of the active vent depends on whether or not the occupant wears a seat belt while the main tube is unfolded.5. The air bag apparatus of claim 3 , wherein the controller controls the active vent not to open when the vehicle velocity is equal to or less than a reference vehicle velocity when the main tube is unfolded.6. The air bag apparatus of claim 5 , wherein the controller controls the active vent not to ...

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Номер записи: 91
25-05-2017 дата публикации

METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

Номер: US20170148643A1
Автор: BAE Yong Kug, HAM Boo Hyun, KANG Hyun Jae, LEE Hyun Chang, PARK Sung Sik, YOON Kwang Sub, YOUN Bum Joon
Принадлежит:

A method of forming a pattern of a semiconductor device includes forming a mask and a sacrificial layer on a substrate, etching the sacrificial layer in a first area of the substrate to form first units, each having a first width and a first distance from an adjacent unit, etching the sacrificial layer in a second area of the substrate to form second units, each having a second width equal to the first distance and being spaced apart from an adjacent unit by a second distance equal to the first width, forming a spacer conformally covering the first and second units, the spacer having a first thickness and being merged between the second units, removing a portion of the spacer on upper surfaces of the first and second units, and etching the mask in a region from which first and second units have been removed. 1. A method of forming a pattern of a semiconductor device , the method comprising:sequentially forming a mask layer and a sacrificial layer on a substrate that includes a first area and a second area;etching the sacrificial layer in the first area of the substrate to form a plurality of first sacrificial pattern units, each first sacrificial pattern unit having a first width and being spaced apart from an adjacent first sacrificial pattern unit by a first distance;etching the sacrificial layer in the second area of the substrate to form a plurality of second sacrificial pattern units, each second sacrificial pattern unit having a second width equal to the first distance and being spaced apart from an adjacent first sacrificial pattern unit by a second distance equal to the first width;forming a spacer film conformally covering the plurality of first sacrificial pattern units and the plurality of second sacrificial pattern units, the spacer film having a first thickness and being merged between the plurality of second sacrificial pattern units;removing a portion of the spacer film covering upper surfaces of the plurality of first sacrificial pattern units and of ...

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Номер записи: 92
21-08-2014 дата публикации

LINEAR AMPLIFIER AND MULTISTAGE LINEAR AMPLIFIER

Номер: US20140232466A1
Автор: LEE Chang Hyun, Park Chung Kun, Park Jong Hoon
Принадлежит: SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK

Disclosed is a linear amplifier which includes: a common source transistor with the gate connected with an input node; a first common gate transistor connected with the common source transistor in a cascode type, with the drain connected with an output node; and a second common gate transistor connected in parallel with the first common gate transistor, with the gate connected with the input node and the drain connected with the output node. 1. A linear amplifier comprising:a common source transistor with the gate connected with an input node;a first common gate transistor connected with the common source transistor in a cascode type, with the drain connected with an output node; anda second common gate transistor connected in parallel with the first common gate transistor, with the gate connected with the input node and the drain connected with the output node.2. The linear amplifier of claim 1 , further comprising a capacitor connected between the input node and the gate of the second common gate transistor.3. The linear amplifier of claim 2 , further comprising a DC bias unit connected between the gate of the second common gate transistor and the capacitor.4. The linear amplifier of claim 1 , further comprising a power controller connected between the input node and the gate of the second common gate transistor and controlling the power from the input node at the level of predetermined power.5. The linear amplifier of claim 4 , further comprising a low pass filter connected between the gate of the second common gate transistor and the power controller.6. The linear amplifier of claim 4 , wherein the threshold voltage of the second common gate transistor is set to a critical gain voltage where the gain of the first common gate transistor starts reducing.7. A multistage linear amplifier comprising a first linear amplifier and a second linear amplifier receiving power from the first linear amplifier claim 4 , wherein the second linear amplifier includes:a common ...

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Номер записи: 93
09-06-2016 дата публикации

SAFETY METHOD FOR PASSENGER OF VEHICLE

Номер: US20160159369A1
Автор: CHO Ean Soo, Cho Yang Rae, LEE Chang Hyun, Park Han Gil
Принадлежит: HYUNDAI MOTOR COMPANY

A safety method for a passenger of a vehicle may include a control logic for detecting a current gear position in a state where the vehicle is stopped, determining whether a passenger door and a rear seat door are open, and allowing driving in a state where the passenger door and the rear seat door are closed but limiting a vehicle drive by changing the gear position to a non-drivable gear position in a state where the passenger door or the rear seat door is open. 1. A safety method for a passenger of a vehicle , the method comprising:a control logic for detecting a current gear position in a state where the vehicle is stopped, determining whether a passenger door and a rear seat door are open, and allowing driving in a state where the passenger door and the rear seat door are closed but limiting a vehicle drive by changing the gear position to a non-drivable gear position in a state where the passenger door or the rear seat door is open.2. The safety method for the passenger of the vehicle of claim 1 , wherein the control logic comprises:a gear position checking step for detecting the current gear position in a state where the vehicle is stopped;a door checking step for determining whether the passenger seat door and the rear seat door are open;a driving determining step for determining whether the vehicle is going to enter a driving mode; anda safety precaution step for fixing the gear position to the non-drivable gear position when the vehicle enters the driving mode in a state where the current gear position is detected as in the non-drivable gear position and the passenger seat or the rear seat door is determined as being open.3. The safety method for the passenger of the vehicle of claim 2 , wherein claim 2 , when the current gear position is detected as being in the non-drivable gear position claim 2 , it is determined that the vehicle is going to enter the driving mode when a gear is shifted from the non-drivable gear position to a drivable gear position at ...

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Номер записи: 94
07-05-2020 дата публикации

SECONDARY BATTERY AND ACTIVE MATERIAL

Номер: US20200144680A1
Автор: Bae Hye-Rim, CHANG Sung kyun, Jeon Sang Hoon, JUNG Hee Won, KIM Doe Hyoung, LEE Chang Hyun, Oh Ji Woo, SHIN Jun Ho
Принадлежит: L&F Co., Ltd.

Disclosed is a secondary battery including a positive electrode, a negative electrode and an electrolyte, wherein the secondary battery further includes a reaction-inducing substance located in any one of the positive electrode, the negative electrode and the electrolyte, wherein the reaction-inducing substance forms a reaction product when exposed to a predetermined temperature or higher in a use environment of the secondary battery, wherein the reaction product is a non-conductor. 1. A secondary battery comprising:a positive electrode;a negative electrode; andan electrolyte,wherein the secondary battery further comprises a reaction-inducing substance located in any one of the positive electrode, the negative electrode and the electrolyte,wherein the reaction-inducing substance forms a reaction product as a non-conductor when exposed to a predetermined temperature or higher in a use environment of the secondary battery,wherein the reaction product is a non-conductor.2. The secondary battery according to claim 1 , wherein the reaction-inducing substance forms the reaction product by reacting with at least one of the electrolyte and a binder in the secondary battery.3. The secondary battery according to claim 1 , wherein as a temperature increases claim 1 , a size of the reaction product increases.4. The secondary battery according to claim 1 , wherein the reaction-inducing substance comprises a compound represented by Formula 1 below:{'br': None, 'sub': x', 'y', 'z−y', 'a−b', 'b, 'LiMSiOA\u2003\u2003(1)'}wherein 0≤x≤4, 0≤y≤1, 0 Подробнее

Номер записи: 95
07-05-2020 дата публикации

SECONDARY BATTERY AND ACTIVE MATERIAL

Номер: US20200144682A1
Автор: Bae Hye-Rim, CHANG Sung kyun, Jeon Sang Hoon, JUNG Hee Won, KIM Doe Hyoung, LEE Chang Hyun, Oh Ji Woo, SHIN Jun Ho
Принадлежит: L&F Co., Ltd.

Disclosed are a secondary battery, an active material, a method for preparing the same, and a lithium secondary battery including the same. In an embodiment, provided is a secondary battery including a positive electrode, a negative electrode and an electrolyte, wherein the secondary battery further includes a reaction-inducing substance located in any one of the positive electrode, the negative electrode and the electrolyte, wherein the reaction-inducing substance forms a reaction product by consuming thermal energy when exposed to a predetermined temperature or higher in a use environment of the secondary battery, thereby improving thermal safety of the secondary battery. 1. A secondary battery comprising:a positive electrode;a negative electrode; andan electrolyte,wherein the secondary battery further comprises a reaction-inducing substance located in any one of the positive electrode, the negative electrode and the electrolyte,wherein the reaction-inducing substance forms a reaction product by consuming thermal energy when exposed to a predetermined temperature or higher in a use environment of the secondary battery, thereby improving thermal safety of the secondary battery.2. The secondary battery according to claim 1 , wherein the reaction-inducing substance forms the reaction product by reacting with at least one of the electrolyte and a binder in the secondary battery.3. The secondary battery according to claim 1 , wherein a reaction for forming the reaction product is an endothermic reaction.4. The secondary battery according to claim 1 , wherein the reaction product is detected when the secondary battery is heated to 300° C. and then taken apart and is observed with a scanning electron microscope.5. The secondary battery according to claim 1 , wherein the reaction product is detected when the secondary battery is heated to 380° C. and then taken apart and is observed with a scanning electron microscope.6. The secondary battery according to claim 1 , ...

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Номер записи: 96
14-05-2020 дата публикации

Device And Method For Enhancing Accuracy Of Detecting Leakage Current

Номер: US20200150189A1
Автор: Hyun Chang Lee
Принадлежит: Individual

Disclosed is a device for detecting a leak. The device for detecting a leak may include: an earth voltage measuring unit measuring earth voltage; an ADC unit sampling the measured earth voltage and converting the sampled earth voltage into a digital value; an effective value calculating unit calculating an effective value of the earth voltage converted into the digital value; a Fourier transforming unit performing Fourier transform of the measured earth voltage to calculate voltage for each harmonic component which is an integer multiple of a fundamental frequency—a power frequency of AC commercial power —, based on the effective value of the earth voltage; a content rate calculating unit calculating a voltage content rate of the fundamental frequency to voltage obtained by adding the voltage for each harmonic component based on the voltage for each harmonic component; a harmonic distortion rate calculating unit calculating a total harmonic distortion and a harmonic distortion factor based on the voltage for each harmonic component; a zero-crossing estimating unit estimating a zero-crossing count at which the earth voltage converted into the digital value passes through zero voltage for a predetermined time T 1 ; and a suspicious earth leaking area determining unit determining that the earth voltage is generated by the leak of the AC commercial power based on at least any one of the effective value of the earth voltage, the voltage content rate, the total harmonic distortion, the harmonic distortion factor, and the zero-crossing count and determining a region where the earth voltage is measured as the suspicious earth leaking area based on the determination result.

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Номер записи: 97
22-09-2022 дата публикации

POLYMER ELECTROLYTE MEMBRANE, METHOD FOR PREPARING THE MEMBRANE AND FUEL CELL COMPRISING THE MEMBRANE

Номер: US20220302488A1
Автор: Choi Seung Kyu, HEO Pil WON, Jeong Ki Young, KANG Eun Heui, LEE Chang Hyun, Lee Sung Chul, PARK In Kee
Принадлежит:

The polymer electrolyte membrane includes: a first ion conductive polymer layer; and a second ion conductive polymer layer disposed on at least one surface of the first ion conductive polymer layer, wherein the first ion conductive polymer layer comprises a first ion conductive polymer comprising a sulfonic acid group, wherein the second ion conductive polymer layer comprises a second ion conductive polymer comprising a carboxylic acid group, and wherein a thickness of the second ion conductive polymer layer is in a range of 1% to 80% of a thickness of the polymer electrolyte membrane. Further, disclosed are the method for preparing the same, the membrane-electrode assembly including the same, and the fuel cell including the same. 1. A polymer electrolyte membrane comprising:a first ion conductive polymer layer; anda second ion conductive polymer layer disposed on at least one surface of the first ion conductive polymer layer,wherein the first ion conductive polymer layer comprises a first ion conductive polymer comprising a sulfonic acid group,wherein the second ion conductive polymer layer comprises a second ion conductive polymer comprising a carboxylic acid group, andwherein a thickness of the second ion conductive polymer layer is in a range of 1% to 80% of a thickness of the polymer electrolyte membrane.2. The polymer electrolyte membrane of claim 1 , wherein the second ion conductive polymer layer comprises:a third ion conductive polymer layer disposed on at least one surface of the first ion conductive polymer layer; anda fourth ion conductive polymer layer disposed on one surface of the third ion conductive polymer layer,wherein the third ion conductive polymer layer comprises a third ion conductive polymer comprising the carboxylic acid group and the sulfonic acid group, andwherein the fourth ion conductive polymer layer comprises a fourth ion conductive polymer comprising the carboxylic acid group.3. The polymer electrolyte membrane of claim 2 , wherein a ...

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Номер записи: 98
15-06-2017 дата публикации

METHOD AND SYSTEM FOR PREVENTING MISOPERATION OF SHIFT LEVER

Номер: US20170167604A1
Автор: CHO Ean Soo, LEE Chang Hyun, Park Han Gil, SONG Ki Young
Принадлежит:

A control method and system for preventing misoperation of a shift lever of a vehicle are provided. In particular, when a driver manipulates the shift lever to select an automatic transmission mode or a manual transmission mode, shifting into an unintended mode attributable to misoperation is prevented. Therefore, the control method and system improve reliability in manipulating the shift lever and provide a safe driving environment to a driver. 1. A control method for preventing misoperation of a shift lever of a vehicle , comprising:determining, by a controller, whether shifting from a drive (D) range, which is an automatic transmission mode, into a manual (M) range, which is a manual transmission mode, is attempted by manipulation of the shift lever;receiving, by the controller, information regarding whether a manual mode switch button is manipulated in response to determining that shifting from the D range to the M range is attempted; andpermitting, by the controller, a shift range to be switched from the D range to the M range in response to receiving information indicating that the manual mode switch button is manipulated.2. The control method of claim 1 , wherein:a shift pattern according to the manipulation of the shift lever is reverse (R)-neutral-(N)-D position;a position of the shift lever is restored to the N range when the shift lever is moved to the R range or the D range; andwhen the shift lever is moved to the D range again in a state in which the D range is selected, the shift range is switched to the M range.3. The control method of claim 1 , further comprising:determining, by the controller, whether the shift lever is shifted from an N range, which is a neutral mode, or from a park (P) range, which is a parking mode, to the D range; anddetermining, by the controller, whether the shift lever maintains the D range for more than a preset period of time.4. The control method of claim 3 , further comprising:outputting, by the controller, a misoperation ...

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Номер записи: 99
11-09-2014 дата публикации

DIFFERENTIAL POWER AMPLIFIER USING MODE INJECTION

Номер: US20140253234A1
Автор: LEE Chang Hyun, Park Chang Kun
Принадлежит: SOONGSIL UNIVERSITY RESEARCH CONSORTIUM TECHNO-PARK

Disclosed is a differential power amplifier using mode injection, which includes: a first transistor of which the gate receives a first signal and the source is connected to the ground; a second transistor of which the gate receives a second signal and the source is connected to the ground; a third transistor of which the source is connected to the source of the first transistor; a fourth transistor of which the source is connected to the source of the second transistor; a fifth transistor of which the source is connected with the drain of the first transistor and the drain is connected with a first output port and the drain of the third transistor; and a sixth transistor of which the source is connected with the drain of the second transistor and the drain is connected with a second output port and the drain of the fourth transistor.

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Номер записи: 100
25-06-2015 дата публикации

METHOD OF CONTROLLING PARKING CONTROL DEVICE OF TRANSMISSION

Номер: US20150176709A1
Автор: Cho Yang Rae, LEE Chang Hyun, Park Han Gil, SONG Ki Young
Принадлежит:

A method of controlling a parking control device of a transmission may include a) inputting data about a state of a vehicle, b) determining, based on the data input at a step of the a), whether a current situation is a first situation in which an actuator of the parking control device of the transmission is to be promptly controlled, a second situation in which noise is controlled to be minimized, or a third situation which is a normal situation, and c) controlling a Pulse Width Modulation (PWM) duty cycle required to control the actuator to different values depending on the first, second, and situations determined at a step of the b), thus driving the actuator. 1. A method of controlling a parking control device of a transmission , comprising:a) inputting data about a state of a vehicle;b) determining, based on the data input at a step of the a), whether a current situation is a first situation in which an actuator of the parking control device of the transmission is to be promptly controlled, a second situation in which noise is controlled to be minimized, or a third situation which is a normal situation; andc) controlling a Pulse Width Modulation (PWM) duty cycle required to control the actuator to different values depending on the first, second, and situations determined at a step of the b), thus driving the actuator.2. The method of claim 1 , wherein the data input at the step of the a) includes an starting state of an engine claim 1 , a state of the transmission claim 1 , a speed of the vehicle claim 1 , a temperature of Automatic Transmission Fluid (ATF) claim 1 , and a voltage of a battery.3. The method of claim 2 , wherein the step of the b) is configured to claim 2 , when it is determined claim 2 , based on the data including the vehicle speed and the starting state of the engine claim 2 , that the current situation is a situation in which an ignition is turned off while the vehicle is being driven claim 2 , determine a current mode to be an operating ...

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Номер записи: 101
06-06-2019 дата публикации

SYSTEM AND METHOD FOR PARKING CONTROL OF VEHICLE

Номер: US20190168730A1
Автор: Bae Seong Uk, Chang Hwi Bong, Cho Yang Rae, LEE Chang Hyun, PARK Joon Young
Принадлежит:

A system for parking control of a vehicle in which a transmission parking configuration is omitted is provided. The system includes a shift by wire device that requests a parking control of the vehicle when a parking stage is input by an operation of a driver. An electronic parking brake operates a brake installed on a drive wheel via a relay which is connected to be in a parking brake state when the electronic parking brake receives the parking control request from the shift by wire device. The shift by wire device switches the relay to directly operate the brake to be in the parking brake state when the shift by wire device receives a failure event, which indicates that a normal operation of the electronic parking brake is impossible, from the electronic parking brake. 1. A system for parking control of a vehicle in which a transmission parking configuration is omitted , comprising:a shift by wire device configured to request a parking control of the vehicle when a parking stage is input by an operation of a driver of the vehicle; andan electronic parking brake configured to operate a brake installed on a drive wheel via a relay which is connected to operate the brake to be in a parking brake state when the electronic parking brake receives the parking control request from the shift by wire device,wherein the shift by wire device is configured to switch the relay to directly operate the brake to be in the parking brake state when the shift by wire device receives a failure event from the electronic parking brake.2. The system of claim 1 , further comprising:a cluster configured to display information regarding a shift operation of the shift by wire device to the driver;a central gateway that interconnects the shift by wire device, the electronic parking brake, and the cluster that communicate heterogeneous network; anda backup line that connects a communication between the shift by wire device and the electronic parking brake when the failure event occurs.3. The ...

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Номер записи: 102
18-09-2014 дата публикации

Semiconductor Devices and Methods of Manufacturing the Same

Номер: US20140264548A1
Автор: Albert Fayrushin, Chang-Hyun Lee, Dong-Hoon Jang, Hyun-Jung Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A memory device may include a plurality of semiconductor patterns on a substrate including a plurality of first impurity regions doped at a first impurity concentration, a plurality of second impurity regions at portions of the substrate contacting the plurality of semiconductor patterns and doped at a second impurity concentration, a plurality of channel patterns on the plurality of semiconductor patterns, a plurality of gate structures, a plurality of third impurity regions at portions of the substrate adjacent to end portions of the plurality of gate structures, and a plurality of fourth impurity regions at portions of the substrate between the second and third impurity regions and between adjacent second impurity regions. The plurality of fourth impurity regions may be doped at a third impurity concentration which may be lower than the first and second impurity concentrations.

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Номер записи: 103
18-09-2014 дата публикации

VERTICAL MEMORY DEVICES WITH VERTICAL ISOLATION STRUCTURES AND METHODS OF FABRICATING THE SAME

Номер: US20140264549A1
Автор: Lee Chang-Hyun
Принадлежит:

A vertical memory device includes a substrate, a column of vertical channels on the substrate and spaced apart along a direction parallel to the substrate, respective charge storage structures on sidewalls of respective ones of the vertical channels and gate electrodes vertically spaced along the charge storage structures. The vertical memory device further includes an isolation pattern disposed adjacent the column of vertical channels and including vertical extension portions extending parallel to the vertical channels and connection portions extending between adjacent ones of the vertical extension portions. 1. A vertical memory device , comprising:a substrate;a column of vertical channels on the substrate and spaced apart along a first direction parallel to the substrate;respective charge storage structures on sidewalls of respective ones of the vertical channels;gate electrodes vertically spaced along the charge storage structures; andan isolation pattern disposed adjacent the column of vertical channels and including vertical extension portions extending parallel to the vertical channels and connection portions extending between adjacent ones of the vertical extension portions.2. The vertical memory device of claim 1 , wherein the gate electrodes include a ground selection line claim 1 , a word line and a string selection line vertically spaced apart along the vertical channels claim 1 , and wherein the connection portions have bottom surfaces disposed between the string selection line and the word line.3. The vertical memory device of claim 2 , wherein the bottom surfaces of the connection portions are disposed lower than a bottom surface of the string selection line and wherein top surfaces of the connection portions are disposed higher than a top surface of the string selection line.4. The vertical memory device of claim 2 , wherein the string selection line comprises string selection lines separated from each other along a second direction parallel to the ...

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Номер записи: 104
18-09-2014 дата публикации

NON-VOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME

Номер: US20140269080A1
Автор: Lee Chang-Hyun
Принадлежит:

A non-volatile memory device includes a memory cell array and a voltage generator. The memory cell array has a plurality of cell strings in which a plurality of memory cells are connected with each other in series between a string select transistor and a ground select transistor. The voltage generator generates a program voltage, a first pass voltage, and a second pass voltage. A first boost channel voltage applied when programming an outermost memory cell from among the memory cells of each of non-selected cell strings of the cell strings is lower than a second boost channel voltage applied when programming one of remaining memory cells except for the outermost memory cell. The non-volatile memory device prevents programming disturb caused by hot carrier injection. 1. A non-volatile memory device , comprising:a memory cell array having a plurality of cell strings in which a plurality of memory cells are connected with each other in series between a string select transistor and a ground select transistor; anda voltage generator to generate a program voltage, a first pass voltage, and a second pass voltage,wherein a first boost channel voltage applied when programming an outermost memory cell from among the memory cells of each of non-selected cell strings of the plurality of cell strings is lower than a second boost channel voltage applied when programming one of remaining memory cells except for the outermost memory cell.2. The non-volatile memory device of claim 1 , wherein the first boost channel voltage is formed by combining the program voltage applied to a word line of the outermost memory cell with first pass voltages applied to word lines of the remaining memory cells claim 1 ,the second boost channel voltage is formed by the program voltage applied to a word line of the one remaining memory cell except for the outermost memory cell and the second pass voltage applied to each word line of each of the memory cells except for the one remaining memory cell, ...

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Номер записи: 105
09-07-2015 дата публикации

VERTICAL-TYPE NON-VOLATILE MEMORY DEVICES HAVING DUMMY CHANNEL HOLES

Номер: US20150194435A1
Автор: Lee Chang-Hyun
Принадлежит:

A vertical-type nonvolatile memory device is provided in which differences between the sizes of channel holes in which channel structures are formed are reduced. The vertical-type nonvolatile memory device includes a substrate having channel hole recess regions in a surface thereof. Channel structures vertically protrude from the surface of the substrate on ones of the channel hole recess regions, and memory cell stacks including insulating and conductive layers are alternately stacked along sidewalls of the channel structures. A common source line extends along the surface of the substrate on other ones of the channel hole recess regions in a word line recess region, which separates adjacent memory cell stacks. Related fabrication methods are also discussed. 1. A vertical-type nonvolatile memory device , comprising:a substrate;a channel structure extending from the substrate in a first direction perpendicular to the substrate;a plurality of memory cell stacks respectively comprising a ground selection line, a plurality of word lines, and a string selection line, wherein the ground selection line, the plurality of word lines, and the string selection line are sequentially stacked so as to be separate from each other on a side surface of the channel structure in the first direction;a common source region on a first surface of the substrate between ones of the plurality of memory cell stacks; anda recess region, which has a bottom corresponding to a second surface lower than the first surface of the substrate, in the substrate.2. The vertical-type nonvolatile memory device of claim 1 , further comprising a first channel material layer in the recess region.3. The vertical-type nonvolatile memory device of claim 2 , wherein an upper surface of the first channel material layer is higher than an upper surface of the substrate on which the common source region is provided.4. The vertical-type nonvolatile memory device of claim 2 , wherein the first channel material layer ...

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Номер записи: 106
07-07-2016 дата публикации

POINT CONVERTING SYSTEM, POINT CONVERTING METHOD, AND APPARATUS APPLIED TO THE SAME

Номер: US20160196571A1
Автор: LEE Chang Hyun, Park Chan Won
Принадлежит: SK PLANET CO., LTD.

The present invention discloses a point converting system, a point converting method, and an apparatus applied to the same. That is, in relation to a point conversion among point companies providing respective point services, a point conversion ratio is determined based on points, which are converted, accumulated, and updated for the respective point companies, and the point conversion is performed according to the determined point conversion ratio, thereby avoiding an imbalance phenomenon in which a majority of points are unevenly converted for specific point companies. 1. A point converting apparatus characterized in comprising: a converting unit which converts points between a first point company and a second point company;an updating unit which accumulates the points which have been converted to each of the first point company and the second point company; anda determining unit which determines a point conversion ratio based on accumulated point information which is related to points accumulated for each of the first point company and the second point company, such that point conversion is performed between the first point company and the second point company according to the determined point conversion ratio.2. The point converting apparatus according to claim 1 , characterized in that:the accumulated point information includes at least one of overall accumulated point information, which is related to overall points which are accumulated for each of the first point company and the second point company, and individual accumulated point information, which is related to points accumulated for a specific member or a specific group belonging to each of the first point company and the second point company, andthat the determining unit either determines the point conversion ratio for each of the first point company and the second point company based on the overall accumulated point information, or either determines the point conversion ratio for the specific member or ...

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Номер записи: 107
07-07-2016 дата публикации

METHOD AND DEVICE FOR CONNECTING SINGLE AP DEVICE AMONG MULTIPLE AP DEVICES ON SAME NETWORK TO TERMINAL

Номер: US20160198402A1
Автор: Kim Chang-Hyun, KO Hyeon-mok, Kwon Dae-hyung, Lee Chang-Hyun, SUNG Duk-gu, YOON Kang-Jin
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

Provided is a method of connecting an access point (AP) device from among a plurality of AP devices on a same network to a terminal. The method includes registering, by the AP device, media access control (MAC) address information regarding at least one or more terminals; receiving a connection request to the AP device from the terminal; and comparing the MAC address information regarding the terminal extracted from the connection request to the registered MAC address information and determining whether to connect the terminal to the AP device. 1. A method by which an access point (AP) device from among a plurality of AP devices on a same network establishes a connection to a terminal , the method comprising:registering, by the AP device, media access control (MAC) address information regarding at least one or more terminals;receiving a connection request to the AP device from the terminal; andcomparing the MAC address information regarding the terminal extracted from the connection request to the registered MAC address information and determining whether to connect the terminal to the AP device.2. The method of claim 1 , wherein claim 1 , in the determining claim 1 , if the registered MAC address information is identical to the MAC address information regarding the terminal claim 1 , the terminal is connected to the AP device claim 1 , and claim 1 ,if the registered MAC address information is not identical to the MAC address information regarding the terminal, the terminal is not connected to the AP device.3. The method of claim 1 , wherein the same network refers to networks using a same service set identifier (SSID).4. The method of claim 1 , wherein the registering further comprises receiving MAC address information regarding the at least one or more terminals via an external device.5. The method of claim 4 , wherein the external device receives the MAC address information regarding the at least one or more terminals by using at least one of a radio frequency ...

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Номер записи: 108
20-06-2019 дата публикации

SEPARATOR FOR LITHIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING SAME, AND LITHIUM SECONDARY BATTERY INCLUDING SAME

Номер: US20190189987A1
Автор: Cho Minho, Han Sung Soo, LEE Chang Hyun, Park Myungkook, Yang Seung Rim
Принадлежит:

The present invention relates to a separator for a lithium secondary battery, a method for manufacturing the separator, and a lithium secondary battery including the separator. The separator includes a porous substrate and a heat resistance porous layer positioned on at least one surface of the porous substrate, wherein the heat resistance porous layer includes a sulfonic acid group-containing polysulfone. 1. A separator for a lithium rechargeable battery , comprisinga porous substrate and heat resistance porous layer disposed on at least one surface of the porous substrate,wherein the heat resistance porous layer includes sulfonic acid group-containing polysulfone.3. The separator of claim 1 , wherein the sulfonic acid group-containing polysulfone is sulfonic acid group-containing polyarylene ethersulfone.6. The separator of claim 1 , wherein a weight average molecular weight of the sulfonic acid group-containing polysulfone ranges from about 20 claim 1 ,000 g/mol to about 200 claim 1 ,000 g/mol.7. The separator of claim 1 , wherein the heat resistance porous layer further includes a filler.8. The separator of claim 7 , wherein the filler includes AlO claim 7 , SiO claim 7 , TiO claim 7 , SnO claim 7 , CeO claim 7 , MgO claim 7 , NiO claim 7 , CaO claim 7 , GaO claim 7 , ZnO claim 7 , ZrO claim 7 , YO claim 7 , SrTiO claim 7 , BaTiO claim 7 , Mg(OH) claim 7 , boehmite claim 7 , or a combination thereof.9. The separator of claim 7 , wherein the sulfonic acid group-containing polysulfone is included in an amount of about 0.1% to about 40% and the filler is included in an amount of about 60% to about 99.9% based on the total weight of the sulfonic acid group-containing polysulfone and the filler.10. A method of manufacturing a separator for a lithium rechargeable battery claim 7 , comprisingdispersing a sulfonic acid group-containing polysulfone in a low-boiling-point solvent into a nano-size to prepare nano dispersion liquid,applying the nano dispersion liquid on at ...

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Номер записи: 109
27-06-2019 дата публикации

SHIFT LOCK STRUCTURE OF SHIFT LEVER

Номер: US20190195340A1
Автор: KIM Bum Jun, Kim Yong Ik, LEE Chang Hyun
Принадлежит:

A shift lock structure of a shift lever, includes: an engaging lever provided at a lower end portion of the shift lever and rotated when the shift lever is rotated; a solenoid valve having a plunger extending in a direction intersecting a direction in which the engaging lever is rotated and configured to allow the plunger to be retracted or extracted depending on a shift stage; and a lock lever located in a rotation direction in which the engaging lever is rotated from a P-stage to another stage, and coupled with the plunger such that, when the shift stage is the P-stage, when the plunger is extracted and moved in an axial direction thereof, the lock lever blocks rotation of the engaging lever, implementing the shift lock. 1. A shift lock structure of a shift lever , the shift lock structure including:an engaging lever provided at a lower end portion of the shift lever and rotated when the shift lever is rotated;a solenoid valve having a plunger extending in a direction intersecting a direction in which the engaging lever is rotated and configured to allow the plunger to be retracted or extracted depending on a shift stage; anda lock lever located in a rotation direction in which the engaging lever is rotated from a P-stage to another stage, and coupled with the plunger such that, in a case in which the shift stage is the P-stage, when the plunger is extracted and moved in an axial direction thereof, the lock lever blocks a rotation of the engaging lever, implementing a shift lock.2. The shift lock structure of claim 1 , wherein the lock lever has a plate shape having a predetermined thickness and area claim 1 , and the engaging lever and the lock lever are in plane contact with each other.3. The shift lock structure of claim 1 , wherein the lock lever has a coupling portion claim 1 , which is coupled with the plunger claim 1 , and the coupling portion includes a through hole formed in the lock lever.4. The shift lock structure of claim 1 , wherein the lock lever ...

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Номер записи: 110
29-07-2021 дата публикации

Biomaterials for 3D Cell Growth and Differentiation

Номер: US20210230552A1
Автор: Gill Harvinder Singh, LEE Chang Hyun
Принадлежит:

The present invention includes a polypeptide for use in a three dimensional (3D) culture system for the growth of cells comprising one or more repeats of a sequence n-(XXGXP)-n(SEQ ID NO:8), wherein Xand Xare any amino acids except proline, wherein Xand X2 can be the same or different amino acid in solution or coated on a substrate, wherein nand nare equal to or greater than one, and wherein X is an aliphatic amino acid. 1. A polypeptide for use in a three dimensional (3D) culture system for the growth of cells comprising:{'sub': 1', '1', '2', '2', '1', '2', '1', '2', '1', '2, 'one or more repeats of a sequence n-(XXGXP)-n(SEQ ID NO:8), wherein X, X, Xare any amino acid, wherein X, X, and Xcan be the same or different amino acid, wherein nand nare equal to or greater than one.'}2. The polypeptide of claim 1 , the polypeptide has the sequence selected from at least one of [(XXGXP)(XXGXP)] claim 1 , (SEQ ID NO:68) [(XXGXP)(XXGXP)] (SEQ ID NO:69); (12) [(XXGXP)(XXGXP)(XXGXP)] (SEQ ID NO:70) claim 1 , wherein X claim 1 , X claim 1 , X claim 1 , X claim 1 , and Xare any amino acid claim 1 , and nand nare greater than or equal to one; wherein Xand Xcan be the same or different from each other claim 1 , and Xand Xcan be the same or different from each other; or wherein at least one of Xor Xis different from Xor X claim 1 , or wherein X is valine claim 1 , or X=G claim 1 , X=Y and A (in 1:4 ratio) and X=V.3. The polypeptide of claim 1 , further comprising attaching to claim 1 , or forming a fusion protein with claim 1 , the polypeptide and at least a portion of an extracellular matrix component selected from at least one of: glycosaminoglycans (GAGs) claim 1 , proteoglycans claim 1 , and/or proteins such as but not limited to laminin claim 1 , fibronectin claim 1 , vitronectin claim 1 , collagen claim 1 , elastin claim 1 , fibrillin claim 1 , fibulin claim 1 , tenascin claim 1 , perlecan claim 1 , versican claim 1 , aggrecan claim 1 , neurocan claim 1 , brevican claim 1 , ...

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Номер записи: 111
27-06-2019 дата публикации

METHOD AND DEVICE FOR PROVIDING SECURITY CONTENT

Номер: US20190197227A1
Автор: Jin Young-kyu, KANG Nam-wook, KIM Do-hyoung, KWAK Byeong-hoon, Lee Chang-Hyun, LEE Woo-hyoung, LIM Yong-hyun, Park Yong-gook, RYU Jong-youb
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A method, performed by a device, of providing security content includes receiving a touch and drag input indicating that a user drags a visual representation of a first application displayed on a touch screen of the device to a fingerprint recognition area while the user touches the visual representation of the first application with a finger; performing authentication on a fingerprint of the finger detected on the touch screen using a fingerprint sensor included in the fingerprint recognition area; and when the performing authentication on the fingerprint is successful, displaying the security content associated with the first application on an execution window of the first application. 1. A method , performed by a device , of providing security content , the method comprising:receiving, on a touch screen, a touch input of a finger touching a visual representation of a first application;displaying a plurality of functions provided by the first application within a predetermined distance from a location where the touch input is received;while maintaining the touch input, detecting the touch input is moved from the visual representation of the first application to a visual representation of a first function of the first application;while still maintaining the touch input, detecting the touch input is moved from the visual representation of the first function among the plurality of functions to a fingerprint recognition area;performing authentication based on a fingerprint of the finger detected on the fingerprint recognition area; andexecuting the first function of the first application based on a result of the authentication.2. The method of claim 1 , wherein the fingerprint recognition area comprises a home button area of the device.3. The method of claim 1 , the method further comprising:when the first application includes the security content, displaying the fingerprint recognition area on the touch screen.4. The method of claim 3 , wherein the displaying of the ...

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Номер записи: 112
06-08-2015 дата публикации

VERTICAL MEMORY DEVICES

Номер: US20150221666A1
Автор: Lee Chang-Hyun
Принадлежит:

According to example embodiments, a vertical memory device includes a low resistance layer on a lower insulation layer, a channel layer on the low resistance layer, a plurality of vertical channels on the channel layer, and a plurality of gate lines. The vertical channels extend in a first direction that is perpendicular with respect to a top surface of the channel layer. The gate lines surround outer sidewalls of the vertical channels, and are stacked in the first direction and are spaced apart from each other. 1. A vertical memory device , comprising:a lower insulation layer;a low resistance layer on the lower insulation layer;a channel layer on the low resistance layer;a plurality of vertical channels on the channel layer, the vertical channels extending in a first direction that is perpendicular with respect to a top surface of the channel layer, the vertical channels including outer sidewalls; anda plurality of gate lines surrounding the outer sidewalls of the vertical channels, the gate lines being stacked in the first direction and spaced apart from each other.2. The vertical memory device of claim 1 , further comprising:an ohmic contact layer between the low resistance layer and the channel layer.3. The vertical memory device of claim 2 , whereinthe ohmic contact layer and the channel layer include polysilicon doped with p-type impurities, andan impurity concentration of the ohmic contact layer is greater than an impurity concentration of the channel layer.4. The vertical memory device of claim 1 , wherein the low resistance layer includes at least one of a metal claim 1 , a metal nitride and a metal silicide claim 1 , andan electrical resistance of the low resistance layer is less than an electrical resistance of the channel layer.5. The vertical memory device of claim 1 , wherein the low resistance layer has one of a linear shape buried in the lower insulation layer and an island shape buried in the lower insulation layer.6. The vertical memory device of ...

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Номер записи: 113
20-08-2015 дата публикации

METHODS OF MANUFACTURING NON-VOLATILE MEMORY DEVICES

Номер: US20150236111A1
Автор: Cho Byung-Kyu, Fayrushin Albert, Lee Chang-Hyun, You Jang-Hyun
Принадлежит:

A non-volatile memory device includes gate structures, an insulation layer pattern, and an isolation structure. Multiple gate structures being spaced apart from each other in a first direction are formed on a substrate. Ones of the gate structures extend in a second direction that is substantially perpendicular to the first direction. The substrate includes active regions and field regions alternately and repeatedly formed in the second direction. The insulation layer pattern is formed between the gate structures and has a second air gap therein. Each of the isolation structures extending in the first direction and having a first air gap between the gate structures, the insulation layer pattern, and the isolation structure is formed on the substrate in each field region. 114-. (canceled)15. A method of manufacturing a non-volatile memory device , comprising:forming a plurality of gate structures on a substrate that includes active regions and field regions that are alternately and repeatedly formed in a second direction, each of the active regions and the field regions extending in a first direction that is substantially perpendicular to the second direction, the plurality of gate structures spaced apart from each other in the first direction, and ones of the plurality of gate structures extending in the second direction;forming an insulation layer pattern between the gate structures, the insulation layer pattern having a second air gap therein; andforming an isolation structure on the substrate in each field region, the isolation structure extending in the first direction and having a first air gap between the gate structures, the insulation layer pattern, and the isolation structure.16. The method according to claim 15 , wherein forming the isolation structure comprises:forming a liner on respective sidewalls of lower portions of ones of the plurality of gate structures; andforming a filling layer on a portion of the liner.17. The method according to claim 15 , ...

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Номер записи: 114
18-08-2016 дата публикации

VACUUM CLEANER

Номер: US20160235268A1
Автор: Choi Keon Soo, HA Dong Woo, HAN Ji Yeon, Kim Shin, LEE Chang Hyun, Lee Dong Hyun
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A vacuum cleaner includes an actuator connected to a suction hose to rotate in left and right directions centering on a first rotation axis, or in forward and backward directions centering on a second rotation axis according to movement of the suction hose, a first displacement sensor detecting rotational displacement of the actuator in the left and right directions, and a second displacement sensor detecting rotational displacement of the actuator in the forward and backward directions, and controls activation of a plurality of driving motors according to the rotational displacement of the actuator in the left and right directions and in the forward and backward directions, which are detected by the first displacement sensor and the second displacement sensor, thereby advancing or rotating the main body in the left and right directions. 1. A vacuum cleaner , comprising:a main body;a suction nozzle configured to suck in air from a surface being cleaned;a suction hose configured to guide the air sucked in through the suction nozzle to the main body;a plurality of wheels provided at both sides of the main body;a plurality of driving motors configured to provide the plurality of wheels with driving forces;an actuator connected to the suction hose to rotate in left and right directions centering on a first rotation axis or in forward and backward directions centering on a second rotation axis according to movement of the suction hose;a first displacement sensor configured to detect rotational displacement of the actuator in the left and right directions;a second displacement sensor configured to detect rotational displacement of the actuator in the forward and backward directions; anda control unit configured to control activation of the plurality of driving motors according to the rotational displacement of the actuator, which is detected by the first displacement sensor and the second displacement sensor, in the left and right directions and in the forward and ...

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Номер записи: 115
17-08-2017 дата публикации

VOLTAGE GENERATION CIRCUIT AND INTEGRATED CIRCUIT INCLUDING THE SAME

Номер: US20170235324A1
Автор: KIM Kyeong-Tae, KIM Saeng-Hwan, Lee Chang-Hyun, PARK Jae-Boum
Принадлежит:

A voltage generation circuit includes: a periodic wave generator that generates an on/off signal that is periodically enabled/disabled, where at least one between a period and a duty cycle of the on/off signal is controlled based on at least one information among temperature information, capacitance information, leakage current information, speed information, and voltage level information; and an internal voltage generator that is enabled/disabled in response to the on/off signal and generates an internal voltage. 1. A voltage generation circuit , comprising:a periodic wave generator suitable for generating an on/off signal that is periodically enabled/disabled, wherein at least one of a period and a duty cycle of the on/off signal is controlled based on at least one information of temperature information, capacitance information, leakage current information, speed information, and voltage level information; andan internal voltage generator suitable for being enabled/disabled in response to the on/off signal and generating an internal voltage.2. The voltage generation circuit of claim 1 , wherein the temperature information is generated by a temperature sensor mounted on an integrated circuit including the voltage generation circuit.3. The voltage generation circuit of claim 1 , wherein the capacitance information claim 1 , the leakage current information claim 1 , and the voltage level information are stored in a non-volatile memory device suitable for storing values determined during a test of an integrated circuit including the voltage generation circuit.4. The voltage generation circuit of claim 1 , wherein the speed information is stored in a register suitable for storing setup information of an integrated circuit including the voltage generation circuit.5. The voltage generation circuit of claim 1 , wherein the periodic wave generator includes:an oscillation unit suitable for generating a periodic wave;a dividing unit for dividing the periodic wave into a ...

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Номер записи: 116