SACRIFICIAL ETCH PROTECTION LAYERS FOR REUSE OF WAFERS AFTER EPITAXIAL LIFT OFF

There is disclosed a growth structure comprising a growth substrate, a sacrificial layer, a buffer layer, at least three substrate protective layers, at least one epilayer, at least one contact, and a metal or alloy-coated host substrate. In one embodiment, the device further comprises at least three device structure protecting layers. The sacrificial layer may be positioned between the growth substrate and the at least one epilayer, wherein the at least three substrate protective layers are positioned between the growth substrate and the sacrificial layer, and the at least three device structure protecting layers are positioned between the sacrificial layer and the epilayer. There is also disclosed a method of preserving the integrity of a growth substrate by releasing the cell structure by etching the sacrificial layer and the protective layers. 1. A method of preserving the integrity of a growth substrate , comprising:providing a structure having a growth substrate with at least one growing surface; a cell; a sacrificial layer; and at least three protective layers;releasing the cell by etching the sacrificial layer with an etchant;removing the third protective layer by etching the third protective layer with an etchant;removing the second protective layer by etching the second protective layer with an etchant; andremoving the first protective layer by etching the first protective layer with an etchant.2. The method of claim 1 , wherein the first protective layer is positioned above the growth substrate claim 1 , the second protective layer is positioned above the first protective layer claim 1 , the third protective layer is positioned above the second protective layer claim 1 , and the sacrificial layer is positioned above the third protective layer.3. The method of wherein at least one of the protective layers is comprised of lattice matched compounds.4. The method of claim 1 , wherein at least one of the protective layers is a strained layer.5. The method of ...

METHODS OF PREPARING FLEXIBLE PHOTOVOLTAIC DEVICES USING EPITAXIAL LIFTOFF, AND PRESERVING THE INTEGRITY OF GROWTH SUBSTRATES USED IN EPITAXIAL GROWTH

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse. 1. A method of preserving the integrity of a growth substrate , comprising:providing a structure having a growth substrate with at least one growing surface; a cell; a sacrificial layer; a first protective layer; and a second protective layer, wherein the sacrificial layer and the first and second protective layers are positioned between the growth substrate and the cell;releasing the cell by etching the sacrificial layer with an etchant;removing the second protective layer by etching the second protective layer with an etchant; andremoving the first protective layer by etching the first protective layer with an etchant.279-. (canceled)80. The method of claim 1 , wherein the first protective layer is positioned above the growth substrate claim 1 , the second protective layer is positioned above the first protective layer claim 1 , and the sacrificial layer is positioned above the second protective layer.81. The method of claim 1 , wherein the growth substrate and the second protective layer comprise the same material.82. The method of claim 1 , wherein the growth substrate is selected from Ge claim 1 , Si claim 1 , GaAs claim 1 , InP claim 1 , GaSb claim 1 , GaN claim 1 , AlN claim 1 , and combinations thereof.83. The method of claim 81 , wherein the same material comprises InP.84. The method of claim 81 , wherein the same material comprises GaAs.85. The method of claim 83 , wherein the first protective layer is selected from InGaAs claim 83 , InAlAs claim 83 , (AlGa)AsSb claim 83 , and combinations thereof.86. The method of claim 84 , wherein the first protective layer is selected from InGaP claim 84 ...

THIN-FILM THERMOPHOTOVOLTAIC CELLS

Thermophotovoltaic (TPV) systems and devices with improved efficiencies are disclosed herein. In one example, a thermophotovoltaic (TPV) cell includes an active layer; a back-surface reflective (BSR) layer; and a spacer layer positioned between the active layer and back-surface reflective layer. 1. A thermophotovoltaic (TPV) cell comprising:an active layer comprising indium gallium arsenide and no antimonide or only trace levels of antimonide;a back-surface reflective (BSR) layer; anda spacer layer positioned between the active layer and back-surface reflective layer.2. The TPV cell of claim 1 , further comprising:an anti-reflective coating (ARC) layer,wherein the active layer is positioned between the ARC layer and the spacer layer.3. The TPV cell of claim 2 , wherein the ARC layer comprises a plurality of layers.4. The TPV cell of claim 3 , wherein a first layer of the plurality of layers comprises magnesium fluoride claim 3 , and a second layer of the plurality of layers comprises zinc selenide.5. The TPV cell of claim 1 , wherein the BSR layer comprises gold.6. The TPV cell of claim 1 , wherein the spacer layer comprises magnesium fluoride.7. The TPV cell of claim 1 , wherein a thickness of the spacer layer is in a range of 0.01-1 micrometers.8. The TPV cell of claim 1 , wherein a thickness of the active layer is in a range of 0.01-10 micrometers.9. The TPV cell of claim 1 , further comprising:an adhesive layer configured to adhere the BSR layer to a substrate.10. The TPV cell of claim 9 , wherein the adhesive layer comprises iridium claim 9 , platinum or titanium.11. The TPV cell of claim 1 , wherein the TPV cell has a sub-bandgap reflectance of at least 90%.12. The TPV cell of claim 1 , wherein the TPV cell has a conversion efficiency of at least 45%.13. The TPV cell of claim 1 , wherein the TPV cell has a conversion efficiency of at least 50%.14. A thermophotovoltaic (TPV) cell comprising:an active layer;a back-surface reflective (BSR) layer; anda spacer ...

Devices combining thin film inorganic leds with organic leds and fabrication thereof

Devices including organic and inorganic LEDs are provided. Techniques for fabricating the devices include fabricating an inorganic LED on a parent substrate and transferring the LED to a host substrate via a non-destructive ELO process. Scaling techniques are also provided, in which an elastomeric substrate is deformed to achieve a desired display size.

EFFECTIVE COMPOUND SUBSTRATE FOR NON-DESTRUCTIVE EPITAXIAL LIFT-OFF

The present disclosure relates to compound substrates for use in epitaxial lift-off. In one implementation, a compound substrate may include a diced wafer layer formed of a plurality of wafer pieces and a wafer-receiving layer having a surface. The wafer layer may have a bottom surface and a top surface, and the bottom surface of the wafer layer may be attached to the surface of the wafer-receiving layer. 1. A compound substrate for use in epitaxial lift-off of a device having an expected size , comprising:a diced wafer layer formed of a plurality of wafer pieces, wherein the wafer layer has a bottom surface and a top surface; anda wafer-receiving layer having a surface, wherein the bottom surface of the wafer layer is attached to the surface of the wafer-receiving layer.2. The compound substrate of claim 1 , wherein the wafer-receiving layer comprises at least one semiconductor.3. The compound substrate of claim 2 , wherein the wafer-receiving layer comprises silicon.4. The compound substrate of claim 1 , wherein the wafer-receiving layer comprises at least one crystalline solid.5. The compound substrate of claim 4 , wherein the wafer-receiving layer comprises quartz.6. The compound substrate of claim 1 , wherein the wafer layer comprises at least one III-V semiconductor.7. The compound substrate of claim 6 , wherein the at least one III-V semiconductor comprises GaAs.8. The compound substrate of claim 1 , wherein the size of each wafer piece is smaller than the expected size of the device.9. The compound substrate of claim 1 , wherein the size of each wafer piece is larger than the expected size of the device.10. The compound substrate of claim 1 , wherein the plurality of wafer pieces are uniformly sized.11. The compound substrate of claim 1 , further comprising:an active device region,wherein the active device region is disposed on the wafer layer.12. The compound substrate of claim 11 , further comprising:one or more sacrificial layers,wherein the one or more ...

Method and device for determining one or more enzymes for biochemical transformation

Systems and methods for identifying enzymes for catalysing biochemical reactions include receiving input of reaction(s) and/or target molecule(s) along with data associated with chemical conversion, determining functional and linker region(s) in the input, scanning a transformation library for the determined functional region(s) of the reaction(s) and/or the target molecule(s) to find similar functional region(s) within the transformation library, assigning the reaction(s) and/or target molecule(s) to group(s) of the transformation library showing a high similarity to the transformation, computing a metabolite similarity score of the reaction(s) and/or target molecule(s) with respect to one or more reactions of the assigned group, and identifying enzyme(s) associated with the reaction(s) of the assigned group having a high metabolite similarity score. A transformation library is also generated.

Devices Combining Thin Film Inorganic LEDs with Organic LEDs and Fabrication Thereof

Devices including organic and inorganic LEDs are provided. Techniques for fabricating the devices include fabricating an inorganic LED on a parent substrate and transferring the LED to a host substrate via a non-destructive ELO process. Scaling techniques are also provided, in which an elastomeric substrate is deformed to achieve a desired display size. 1. A device comprising:an inorganic first light-emitting diode (LED) disposed over a substrate;an organic second LED (OLED) disposed over the substrate and adjacent to the first inorganic LED; anda third LED disposed over the substrate and adjacent to the first LED or the second LED;wherein each of the first, second, and third LEDs is individually addressable as a subpixel within the device.2. The device of claim 1 , wherein the third LED is an OLED.3. The device of claim 1 , wherein the third LED is an inorganic LED.4. The device of claim 1 , wherein the inorganic first LED is configured to emit blue light.5. The device of claim 1 , wherein the device is a device selected from the group consisting of: a flat panel display claim 1 , a computer monitor claim 1 , a medical monitor claim 1 , a television claim 1 , a billboard claim 1 , a light for interior or exterior illumination and/or signaling claim 1 , a heads-up display claim 1 , a fully or partially transparent display claim 1 , a flexible display claim 1 , a laser printer claim 1 , a telephone claim 1 , a cell phone claim 1 , a tablet claim 1 , a phablet claim 1 , a personal digital assistant (PDA) claim 1 , a laptop computer claim 1 , a digital camera claim 1 , a camcorder claim 1 , a viewfinder claim 1 , a micro-display claim 1 , a 3-D display claim 1 , a vehicle claim 1 , a large area wail claim 1 , theater or stadium screen claim 1 , and a sign.6. A full-color display comprising a plurality of pixels claim 1 , each of the pixels comprising a plurality of sub-pixels claim 1 , wherein at least a first portion of sub-pixels in the display comprise OLEDs and at ...

Inverted, semitransparent small molecule photovoltaic cells

Semitransparent organic photovoltaic (OPV) cells provide integrated photovoltaic needs, such as use on windows and other architectural surfaces. These cells can achieve high power conversion efficiency and supply acceptable transparency. Inverted, semitransparent OPV cells are provided that include a mixed organic heterojunction layer or a planar-mixed heterojunction layer. These cells can additionally be used to create a tandem cell, which absorbs light over a broader range of wavelengths.

FLEXIBLE ANTENNA INTEGRATED WITH AN ARRAY OF SOLAR CELLS

A device comprising a thin film solar cell with an integrated flexible antenna, such as a meander line antenna, is disclosed. In an embodiment, the device comprises a substrate and an array of solar cells disposed on the substrate, wherein the array of solar cells are interconnected by metal conductors that carry DC power from the solar cells and which form at least part of the flexible antenna. In their capacity as an antenna, the metal conductors operate cooperatively with the solar cells to radiate an RF signal, receive an RF signal, or both radiate and receive an RF signal. The device optionally comprises a choke disposed on the substrate and electrically coupled to the array of solar cells, wherein the choke operates to impede conduction of the RF signal. A method of making the disclosed device is also disclosed. 1. A device comprising a thin-film solar cell with an integrated flexible antenna , said device comprising:a substrate; andan array of solar cells disposed on the substrate,wherein the array of solar cells are interconnected by metal conductors that carry DC power from the solar cells, and which form at least part of the flexible antenna such that the metal conductors operate cooperatively with the solar cells to radiate an RF signal, receive an RF signal, or both radiate and receive an RF signal.2. The device of claim 1 , wherein at least a portion of the solar cells in the array of solar cells operate to convert solar energy into electrical energy concurrently with radiating and/or receiving the RF signal.3. The device of claim 1 , wherein the metal conductors and the array of solar cells form a meander line antenna.4. The device of claim 1 , further comprising a choke disposed on the substrate and electrically coupled to the array of solar cells claim 1 , wherein the choke operates to impede conduction of the RF signal.5. The device of claim 4 , wherein the choke is disposed between the array of solar cells and the metal conductors in the DC path.6. ...

SYSTEMS AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICES VIA REMOTE EPITAXY

A method of manufacturing a semiconductor device includes forming a release layer on a first substrate and the release layer includes a planar organic molecule. The method also includes forming a single-crystalline film on the release layer and transferring the single-crystalline film from the release layer to a second substrate. 1. A method of manufacturing a semiconductor device , the method comprising:forming a release layer on a first substrate, the release layer comprising a planar organic molecule;forming a single-crystalline film on the release layer; andtransferring the single-crystalline film from the release layer to a second substrate.20. The method of claim , wherein the planar organic molecular has a molecular weight substantially equal to or less than 500 g/mol.30. The method of claim , wherein the planar organic molecule comprises at least one of:perylenetetracarboxylic dianhydride (PTCDA),1,4,5,8-naphthalene-tetracarboxylic-dianhydride (NTCDA), orN,N′-Dioctyl-3,4,9,10 perylenedicarboximide (PTCDI-C8).40. The method of claim , wherein forming the release layer comprises depositing the release layer on the first substrate via evaporation.50. The method of claim , wherein the release layer has a thickness substantially equal to or less than 2 nm.60. The method of claim , wherein forming the single-crystalline film comprises epitaxially growing the single-crystalline film using the first substrate as a growth seed.70. The method of claim , further comprising:forming a capping layer on the release layer before forming the single-crystalline film.80. The method of claim , wherein forming the capping layer comprises depositing the capping layer on the release layer at a first temperature , and forming the single-crystalline film comprises epitaxially growing the single-crystalline layer on the capping layer at a second temperature greater than the first temperature.90. The method of claim , wherein the capping layer has a thickness of about 2 nm to about 10 ...

Strain relief epitaxial lift-off via pre-patterned mesas

Disclosed herein are methods to eliminate or reduce the peeling-off of epitaxial lifted-off thin film epilayers on secondary host substrates that allow for the fabrication of high yield ELO processed thin film devices. The methods employ patterned strain-relief trenches.

MECHANICALLY STACKED TANDEM PHOTOVOLTAIC CELLS WITH INTERMEDIATE OPTICAL FILTERS

A method of fabricating a multi-junction photosensitive device is provided. The method may include fabricating at least two photoactive layers, wherein at least one photoactive layer is fabricated on a transparent substrate, and at least one photoactive layer is fabricated on a reflective substrate, patterning at least one optical filter layer on at least one photoactive layer fabricated on a transparent substrate, and bonding the at least two photoactive layers using cold weld or van der Waals bonding. A multi-junction photosensitive device is also provided. The device may have at least two photoactive layers, and at least one optical filter layer, wherein at least two layers are bonded using cold weld or van der Waals bonding. The optical filter layer may be a Distributed Bragg Reflector. 1. A multi-junction photosensitive device comprising:at least two photoactive layers, andat least one optical filter layer,wherein at least two layers are bonded using cold weld or van der Waals bonding.2. The device of claim 1 , wherein the at least one optical filter layer is a Distributed Bragg Reflector.3. The device of claim 1 , comprising at least three photoactive layers claim 1 , and at least two optical filter layers claim 1 , wherein at least one optical filter layer is located between each photoactive layer.4. The device of claim 1 , wherein at least one photoactive layer may absorb wavelengths of light different than at least one other photoactive layer.5. The device of claim 1 , wherein a photoactive layer below at least one other layer absorbs light in the near infrared spectrum.6. The device of claim 1 , wherein a photoactive layer above at least one other layer absorbs light in the ultraviolet spectrum.7. The device of claim 1 , wherein at least one photoactive layer absorbs a range of wavelengths of light spanning 10 nm that is not absorbed by at least one other photoactive layer.8. The device of claim 1 , wherein wavelength selective optical filter layers are ...

METHODS AND APPARATUS FOR VERTICALLY STACKED MULTICOLOR LIGHT-EMITTING DIODE (LED) DISPLAY

A method of fabricating a multicolor light-emitting diode (LED) display includes forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate. The first LED layer is configured to emit light at a first wavelength. The method also includes transferring the first LED layer from the first release layer to a host substrate and forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate. The second LED layer is configured to emit light at a second wavelength. The method also includes removing the second LED layer from the second release layer and disposing the second LED layer on the first LED layer. 1. A method of fabricating a multicolor light-emitting diode (LED) display , the method comprising:forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate, the first LED layer being configured to emit light at a first wavelength;transferring the first LED layer from the first release layer to a host substrate;forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate, the second LED layer being configured to emit light at a second wavelength;removing the second LED layer from the second release layer; anddisposing the second LED layer on the first LED layer.2. The method of claim 1 , wherein forming the first LED layer comprises epitaxially growing the first LED layer on the first release layer.3. The method of claim 1 , wherein forming the first LED layer comprises epitaxially growing crystalline inorganic semiconductor on the first release layer.4. The method of claim 3 , wherein the first substrate comprises the crystalline inorganic semiconductor.5. The method of claim 1 , wherein the first 2D material comprises graphene.6. The method of claim 1 , wherein the first 2D material is the same as the second 2D material.7. ...

NON-DESTRUCTIVE EPITAXIAL LIFT-OFF OF LARGE AREA III-V THIN-FILM GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND SUBSTRATE REUSE

Disclosed are methods for preserving the integrity of large-sized growth substrates. The methods pertain to accelerating the rate of epitaxial liftoff, and improved cleaning and etching steps. Also disclosed are devices produced therein. 1. A method of preserving the surface of a growth substrate after epitaxial lift off , comprising:providing a growth structure comprising a growth substrate, a sacrificial layer located over the growth substrate, an epilayer located over the sacrificial layer, and at least two protection layers between the growth substrate and the sacrificial layer;lifting off the epitaxial layer by etching the sacrificial layer;{'sub': 2', '2', '3', '4', '4', '2, 'removing at least one of the protection layers with an etchant chosen from citric acid, HO, HPO, NHOH, HO and combinations thereof; and'}{'sub': 3', '4', '2, 'removing at least one other protection layer with an etchant chosen from HCl, HPO, HO and combinations thereof.'}2. The method of claim 1 , further comprising immersing the growth structure in solvent stripper after lifting off the epitaxial layer.3. The method of claim 2 , wherein the solvent stripper is RemoverPG.4. The method of claim 1 , wherein removing one or more of the protection layers further comprises plasma etching.5. The method of claim 1 , wherein the sacrificial layer is etched by immersing the growth structure in HF etchant.6. The method of claim 5 , wherein the HF etchant is agitated by stirring.7. The method of claim 1 , further comprising performing rapid thermal annealing (RTA) on the growth structure subsequent to the lift-off step.8. The method of claim 7 , wherein RTA is performed on the growth structure before removing any of the protection layers.9. The method of claim 7 , wherein RTA is performed on the growth structure after the protection layers are removed.10. The method of claim 7 , wherein RTA is performed on the growth substrate both before and after the protection layers are removed.11. The method of ...

EPITAXIAL LIFT-OFF PROCESSED GAAS THIN-FILM SOLAR CELLS INTEGRATED WITH NON-TRACKING MINI-COMPOUND PARABOLIC CONCENTRATORS

There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises making thin-film GaAs solar cells integrated with low-cost, thermoformed, lightweight and wide acceptance angle mini-CPCs. The fabrication combines ND-ELO thin film cells that are cold-welded to a foil substrate, and subsequently attached to the CPCs in an adhesive-free transfer printing process. There is also disclosed an improved photovoltaic device made by the disclosed method. The improved photovoltaic device comprises a thin-film solar integrated with non-tracking mini-compound parabolic concentrators, wherein the plastic compound parabolic concentrator comprise two parabolas tilted at an angle equal to the acceptance angle of the compound parabolic concentrator. 1. A method for integrating a thin-film solar cell with non-tracking mini-concentrators , said method comprising:providing a growth substrate;depositing at least one protection layer on the growth substrate;depositing at least one sacrificial layer on the at least one protection layer;depositing a photoactive cell on the sacrificial layer, wherein the photoactive cell is inverted;forming a patterned metal layer comprising an array of mesas on the photoactive cells by a photolithography method,bonding the patterned metal layer to a metallized surface of a plastic sheet,etching the sacrificial layer with one or more etch steps that remove the photoactive cell from the growth substrate to form thin film solar cells;fabricating compound parabolic concentrators from a plastic material using at least one thermoforming process; andtransferring the thin film solar cells onto the thermoformed compound parabolic concentrators by an adhesive-free bonding step to form an integrated thin-film solar cell and compound parabolic concentrator.2. The method of claim 1 , wherein the growth substrate comprises GaAs or InP.3. The method of claim 1 , wherein the at least one protection layer is lattice matched with the growth ...

Methods and apparatus for in silico prediction of chemical reactions

Provided are a method and apparatus for designing and processing a rule pipeline for in silico prediction of chemical reactions. The method includes designing a rule pipeline from at least one rule for chemical conversion and processing at least one input molecule by using the designed rule pipeline to predict a chemical reaction based on a processing result of the processing.

Fabrication Of Photodiode Array On Spherical Platform For 4-PI Detection Awareness

A method is presented for fabricating an array of sensors on an object having a non-developable surface. The method includes: growing an epitaxial structure on a substrate; bonding, without the use of an adhesive, the epitaxial structure to a flexible membrane to form a device structure; forming an array of sensors from the epitaxial structure of the device structure using photolithographic techniques; cutting the device structure into segments; and bonding the segments onto the target object.

Preparation of compound semiconductor substrate for epitaxial growth via non-destructive epitaxial lift-off

A method is presented for fabricating a substrate comprised of a compound semiconductor. The method includes: growing a sacrificial layer onto a parent substrate; growing an epitaxial template layer on the sacrificial layer; removing the template layer from the parent substrate using an epitaxial lift-off procedure; and bonding the removed template layer to a host substrate using Van der Waals forces and thereby forming a compound semiconductor substrate.

STRAIN SENSOR UNIT AND SKIN SENSOR MODULE COMPRISING THE SAME

A strain sensor unit and a skin sensor module comprising the same are provided. The strain sensor unit according to an embodiment of the present disclosure includes a substrate having a through-hole, and including a first electrode and a second electrode formed at one side and the other side of the through-hole on one surface of the substrate, a piezoelectric device drawn from the first electrode and extending inward the through-hole, and a piezoresistor drawn from the second electrode and extending inward the through-hole, wherein the piezoresistor overlaps with a whole or part of the piezoelectric device. 1. A strain sensor unit comprising:a substrate having a through-hole;a piezoelectric device located at one side of the through-hole on the substrate, and extending toward another side of the through-hole;a piezoresistor located at another side of the through-hole on the substrate, and extending toward one side of the through-hole;a first electrode located on the piezoelectric device; anda second electrode located on the piezoresistor,wherein the piezoresistor overlaps with a whole or part of the piezoelectric device, andwherein the piezoresistor is a nanocrack-control based metal piezoresistive device.2. The strain sensor unit according to claim 1 , wherein the piezoelectric device is a piezoelectric semiconductor.3. (canceled)4. The strain sensor unit according to claim 1 , wherein an interfacial layer made of amorphous oxide semiconductor is further formed on a contact surface between the piezoelectric device and the piezoresistor.5. The strain sensor unit according to claim 1 , wherein the substrate has a plurality of air permeable holes having the diameter of 50 to 150 μm.6. The strain sensor unit according to claim 5 , wherein a distance between the plurality of air permeable holes is 50 to 150 μm.7. The strain sensor unit according to claim 5 , wherein the plurality of air permeable holes comprises the through-hole.8. The strain sensor unit according to ...

SYSTEMS AND METHODS FOR FABRICATING PHOTOVOLTAIC DEVICES VIA REMOTE EPITAXY

A method of fabricating a photovoltaic (PV) device includes forming a release layer comprising a two-dimensional (2D) material on a first substrate having a first lattice constant and epitaxially growing a first PV layer on the release layer using the first substrate as a seed. The first PV layer has a second lattice constant substantially equal to the first lattice constant of the first substrate. The method also includes removing the first PV layer from the release layer and epitaxially growing a second PV layer on the release layer. 1. A method of fabricating a photovoltaic (PV) device , the method comprising:forming a release layer comprising a two-dimensional (2D) material on a first substrate having a first lattice constant;epitaxially growing a first PV layer on the release layer using the first substrate as a seed, the first PV layer having a second lattice constant substantially equal to the first lattice constant of the first substrate;removing the first PV layer from the release layer; andepitaxially growing a second PV layer on the release layer.2. The method of claim 1 , wherein forming the release layer comprises forming a graphene monolayer on the first substrate.3. The method of claim 2 , wherein forming the graphene monolayer comprises:fabricating the graphene monolayer on a second substrate; andtransferring the graphene monolayer from the second substrate to the first substrate.4. The method of claim 1 , wherein epitaxially growing the first PV layer comprises:epitaxially growing a first emitter layer on the release layer; andepitaxially growing a first base layer on the first emitter layer.5. The method of claim 4 , further comprising:placing the first base layer in contact with a host substrate such that the first emitter layer is oriented to receive incident light for generating electricity.6. The method of claim 1 , wherein epitaxially growing the first PV layer comprises epitaxially growing a single-junction PV cell.7. The method of claim 6 , ...

STRAIN CONTROL FOR ACCELERATION OF EPITAXIAL LIFT-OFF

There is disclosed a thin film device for epitaxial lift off comprising a handle and one or more straining layers disposed on the handle, wherein the one or more straining layers induce a curvature of the handle. There is also disclosed a method of fabricating a thin film device for epitaxial lift off comprising, depositing one or more straining layers on a handle, wherein the one or more straining layers induce at least one strain on the handle chosen from tensile strain, compressive strain and near-neutral strain. There is also disclosed a method for epitaxial lift off comprising, depositing an epilayer over a sacrificial layer disposed on a growth substrate; depositing one or more straining layers on at least one of the growth substrate and a handle; bonding the handle to the growth substrate; and etching the sacrificial layer. 1. A thin film device for epitaxial lift off comprising:a handle and one or more straining layers disposed on the handle, wherein the one or more straining layers induce a curvature of the handle.2. The device of claim 1 , wherein the one or more straining layers induce a curvature of the handle toward a growth substrate.3. The device of claim 1 , wherein the one or more straining layers induce a curvature of the handle away from a growth substrate.4. The device of claim 1 , wherein the one or more straining layers are composed of at least one material chosen from a metal claim 1 , a semiconductor claim 1 , a dielectric and a non-metal.5. The device of claim 1 , wherein the one or more straining layers are composed of at least one metal chosen from Iridium claim 1 , Gold claim 1 , Nickel claim 1 , Silver claim 1 , Copper claim 1 , Tungsten claim 1 , Platinum claim 1 , Palladium claim 1 , Tantalum claim 1 , Molybdenum claim 1 , Chromium and alloys thereof.6. A thin film device for epitaxial lift off comprising:a growth substrate,a handle,and one or more straining layers disposed on at least one of the growth substrate and the handle,wherein ...

Thin film lift-off via combination of epitaxial lift-off and spalling

The present disclosure generally relates to thin film liftoff processes for use in making devices such as electronic and optoelectronic devices, e.g., photovoltaic devices. The methods described herein use a combination of epitaxial liftoff and spalling techniques to quickly and precisely control the separation of an epilayer from a growth substrate. Provided herein are growth structures having a sacrificial layer positioned between a growth substrate and a sacrificial layer. Exemplary methods of the present disclosure include forming at least one notch in the sacrificial layer and spalling the growth structure by crack propagation at the at least one notch to separate the epilayer from the growth substrate.

Strain sensor unit and skin sensor module comprising the same

A strain sensor unit and a skin sensor module comprising the same are provided. The strain sensor unit according to an embodiment of the present disclosure includes a substrate having a through-hole, and including a first electrode and a second electrode formed at one side and the other side of the through-hole on one surface of the substrate, a piezoelectric device drawn from the first electrode and extending inward the through-hole, and a piezoresistor drawn from the second electrode and extending inward the through-hole, wherein the piezoresistor overlaps with a whole or part of the piezoelectric device.

THERMALLY-ASSISTED COLD-WELD BONDING FOR EPITAXIAL LIFT-OFF PROCESS

A process for assembling a thin-film optoelectronic device is disclosed. The process may include providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region. The process may further include providing a host substrate and depositing a first metal layer on the device region and depositing a second metal layer on the host substrate. The process may further include bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a glass transition temperature of the host substrate and a melting temperature of the host substrate. 1. A process for assembling a thin-film optoelectronic device comprising:providing a growth structure comprising a wafer having a growing surface, a sacrificial layer, and a device region, wherein the sacrificial layer is disposed between the wafer and the device region, and wherein the device region has a surface furthest from the wafer;providing a host substrate, wherein the host substrate comprises a polymer material;depositing a first metal layer on the surface of the device region;depositing a second metal layer on the host substrate;bonding the first metal layer to the second metal layer by pressing the first and second metal layers together at a bonding temperature, wherein the bonding temperature is above room temperature and below the lower of a glass transition temperature of the host substrate and a melting temperature of the host substrate.2. The process of claim 1 , wherein the bonding temperature is a temperature within the range of 170°-250° C.3. The process of wherein the polymer material comprises a polyimide film.4. The process of claim 1 , wherein the bonding is performed under vacuum.5. The process of claim 1 , wherein the first and second metal layers are pressed together at a bonding pressure within 1 MPa and 40 MPa.6. ...

SYSTEMS AND METHODS OF DISLOCATION FILTERING FOR LAYER TRANSFER

A method of manufacturing a semiconductor device includes forming a first epitaxial layer on a first substrate. The first substrate includes a first semiconductor material having a first lattice constant and the first epitaxial layer includes a second semiconductor material having a second lattice constant different from the first lattice constant. The method also includes disposing a graphene layer on the first epitaxial layer and forming a second epitaxial layer comprising the second semiconductor material on the graphene layer. This method can increase the substrate reusability, increase the release rate of functional layers, and realize precise control of release thickness. 1. A method of manufacturing a semiconductor device , the method comprising:forming a first epitaxial layer on a first substrate, the first substrate comprising a first semiconductor material having a first lattice constant and the first epitaxial layer comprising a second semiconductor material having a second lattice constant different from the first lattice constant;disposing a graphene layer on the first epitaxial layer; andforming a second epitaxial layer comprising the second semiconductor material on the graphene layer.2. The method of claim 1 , wherein the first substrate comprises GaN and the first epitaxial layer comprises InGaN.3. The method of claim 1 , wherein the first substrate comprises GaAs and the first epitaxial layer comprises InGaP.4. The method of claim 1 , wherein the first substrate comprises InP and the first epitaxial layer comprises InGaAs.5. The method of claim 1 , wherein disposing the graphene layer comprises:forming the graphene layer on a second substrate;transferring the graphene layer from the second substrate to the first epitaxial layer.6. The method of claim 5 , wherein the second substrate comprises silicon carbide and the graphene layer comprises a single-crystalline graphene layer.7. The method of claim 5 , wherein the second substrate comprises a ...

Autonomous solar tracking in flat-plate photovoltaic panels using kirigami-inspired microstructures

There is disclosed Kirigami-inspired structures for use in solar tracking applications. When coupled with thin-film active materials, the disclosed microstructures can track solar position and maximize solar power generation. In one embodiment, there is disclosed a photovoltaic system comprising a single-axis, or multi-axis solar tracking structure comprising a support structure made of a flexible material having a defined unit cell structure, and a flexible photovoltaic cell disposed on the support structure. There is also disclosed methods of making such structures in which the photovoltaic cell is mounted to the support structure by a direct-attachment bonding processes such as cold-welding.

Thermal surface treatment for reuse of wafers after epitaxial lift off

There is disclosed a method of preserving the integrity of a growth substrate in a epitaxial lift-off method, the method comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.

FABRICATION OF THIN-FILM ELECTRONIC DEVICES WITH NON-DESTRUCTIVE WAFER REUSE

Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices. 1. A method of making a thin-film electronic device , comprising the steps of:(a) transferring an optoelectronic device layer from a growth substrate to a polymeric substrate, wherein an epitaxial layer is interposed between the growth substrate and the device layer before the step of transferring, said epitaxial layer remaining with the growth substrate after the step of transferring and comprising a plurality of epitaxial sublayers, each sublayer having a different and selectively etchable material composition; and(b) stretching the polymeric substrate to increase the spacing between individual optoelectronic elements of the device layer; and(c) operably connecting the optoelectronic device layer to a backplane circuit.2. The method of claim 1 , wherein the optoelectronic elements are inorganic LEDs claim 1 , and the thin-film electronic device is a flexible LED display device.3. The method of claim 1 , wherein the optoelectronic elements are photodiodes.4. The method of claim 1 , further comprising the steps of:removing the epitaxial layer from the growth substrate after step (a) such that an entire thickness of the growth substrate is preserved; andforming another ...

SYSTEMS AND METHODS OF FACIAL TREATMENT AND STRAIN SENSING

A method of facial treatment of a user while wearing a treatment system is disclosed. The treatment system includes a flexible film and circuitry disposed on or within the flexible film. The method includes conformally disposing the flexible film over a face of the user and applying a radio frequency (RF) wave, generated by the circuitry, on skin of the face. The method eliminates the need for a user (or a third-party operator) to hold the device by hand. In addition, the thin film can be configured as a face mask allowing treatment over a large area of skin at any given time. 1. A method of using a treatment system comprising a flexible film and circuitry disposed on or within the flexible film , the method comprising:conformally disposing the flexible film over a face of a user; andapplying a radio frequency (RF) wave, generated by the circuitry, onto a skin of the face.2. The method of claim 1 , wherein the flexible film has a thickness substantially equal to or less than 50 μm.3. The method of claim 1 , wherein the flexible film comprises silicone.4. The method of claim 1 , wherein applying the RF wave comprises applying the RF wave at a frequency of about 3 kHz to about 300 MHz.5. The method of claim 1 , wherein applying the RF wave comprises delivering the RF wave into the skin of the face at a penetration depth substantially equal to or greater than 10 μm.6. The method of claim 1 , further comprising:generating the RF wave using an RLC circuit in the circuitry; andpowering the RLC circuit via an antenna in the circuitry.7. The method of claim 1 , further comprising:applying medicine to at least a portion of the face of the user before conformally disposing the flexible film over the face of the user; andwherein applying the RF wave facilitates penetration of the medicine into the skin of the user.8. The method of claim 1 , further comprising:applying medicine on the flexible film before conformally disposing the flexible film over the face of the user; ...

PARABOLIC CONCENTRATOR INTEGRATED WITH BALL LENS

A solar concentrator apparatus for harnessing solar flux is disclosed. The solar concentrator apparatus has a parabolic body having a reflecting surface to receive incident light. The parabolic body and reflecting surface have an incident light flux cone, and a ball lens is positioned within at least a portion of the incident light flux cone. The ball lens has a refracted area and is configured to direct at least a portion of the incident light that is reflected by the reflecting surface of the parabolic body into the refracted area. 1. A solar concentrator apparatus comprising: 'wherein the parabolic body and reflecting surface have an incident light flux cone; and', 'a parabolic body having a reflecting surface to receive incident light;'} 'wherein the ball lens has a refracted area and is configured to direct at least a portion of the incident light that is reflected by the reflecting surface of the parabolic body into the refracted area.', 'a ball lens positioned within at least a portion of the incident light flux cone,'}2. The solar concentrator apparatus of claim 1 , comprising at least one photovoltaic module positioned to receive at least a portion of the light that is directed by the ball lens into the refracted area.3. The solar concentrator apparatus of claim 2 , wherein at least part of the incident light flux cone is outside of the active surface of the at least one photovoltaic module and the refracted area is substantially on the surface of the at least one photovoltaic module.4. The solar concentrator apparatus of claim 1 , wherein the ball lens has a lens angle of 90-170 degrees.5. The solar concentrator apparatus of claim 1 , wherein the ball lens has a lens angle of 100-140 degrees.6. The solar concentrator apparatus of claim 5 , wherein the ball lens has a substantially flat surface in contact with a photovoltaic cell.7. The solar concentrator apparatus of claim 1 , wherein the ball lens comprises fused silica.8. The solar concentrator apparatus ...

SOLAR TRACKING SYSTEM

A solar tracking system for tracking the orientation of solar energy is disclosed. The solar tracking system may be integrated with solar cells and solar concentrators. The solar tracking system may have a first () and second () tracker module array that are opposite from another, aligned in substantially identical orientation, and form a tracker module pair array (). Tracker module pairs () may allow motion relative to one another while maintaining substantially identical orientation. Solar concentrators may be attached to opposing tracker modules of a tracker module pair forming an array of solar concentrators. A base bar array () may be coupled to at least one tracker module pair. A transmission may operably rotate the base bar array and the tracker module pair array simultaneously. 1. A solar tracking system comprising:a first tracker module array and a second tracker module array wherein the first tracker module array and second tracker module array are opposite one another, aligned in substantially identical orientation, and form a tracker module pair array comprising a plurality of interlinked tracker module pairs;a plurality of solar concentrators wherein at least one solar concentrator is attached to and disposed between at least one tracker module pair;a base bar array coupled to one of the tracker module arrays wherein the base bar array comprises a plurality of interlinked base bars; anda transmission coupled to the base bar array and one of the tracker module arrays.2. The solar tracking system of claim 1 , wherein each tracker module pair of the tracker module pair array is operably coupled to an adjacent tracker module pair of the tracker module pair array by a plurality of fitment features.3. The solar tracking system of claim 2 , wherein the fitment features are protruding and receiving fitment features.4. The solar tracking system of claim 1 , wherein each base bar of the base bar array is operably coupled to an adjacent base bar of the base bar ...

FABRICATION OF THIN-FILM ELECTRONIC DEVICES WITH NON-DESTRUCTIVE WAFER REUSE

Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices. 1. A method of making a thin-film electronic device comprising a device layer , the method comprising the steps of:(a) providing a growth substrate having a thickness and a surface suitable for epitaxial growth;(b) disposing an epitaxial protective layer over said surface of the growth substrate;(c) forming the device layer over the protective layer;(d) releasing the device layer from the growth substrate;(e) removing at least a portion of the epitaxial protective layer from the growth substrate to form a new surface suitable for epitaxial growth, wherein the entire thickness of the growth substrate is preserved; and(f) reusing the growth substrate, including forming another device layer over the new surface.2. The method of claim 1 , further comprising the step of transferring the device layer formed in step (c) to a secondary substrate claim 1 , wherein the step of transferring comprises step (d).3. The method of claim 2 , further comprising the step of cold-weld bonding the growth substrate to the secondary substrate before step (d).4. The method of claim 2 , wherein the thin-film electronic device includes the secondary substrate and step (c) comprises consecutively ...

INTEGRATION OF EPITAXIAL LIFT-OFF SOLAR CELLS WITH MINI-PARABOLIC CONCENTRATOR ARRAYS VIA PRINTING METHOD

There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom. 1. A non-destructive method for performing an epitaxial lift-off , comprising:providing a growth substrate;depositing at least one protection layer on the growth substrate;depositing at least one sacrificial layer on the protection layer;depositing a photoactive cell on the sacrificial layer;depositing a metal mask on the at least one photoactive cell;performing a first etch step through said metal mask to form a pattern in the photoactive cell, wherein said pattern extends to the sacrificial layer; andremoving the sacrificial layer with one or more second etch steps.2. The method of claim 1 , wherein the growth substrate comprises GaAs or InP.3. The method of claim 1 , wherein the at least one protection layer is lattice matched with the growth substrate.4. The method of claim 3 , wherein the at least one protection layer is selected from GaAs claim 3 , InP claim 3 , InGaAs claim 3 , AlInP claim 3 , GaInP claim 3 , InAs claim 3 , InSb claim 3 , GaP claim 3 , AlP claim 3 , GaSb ...

NON-DESTRUCTIVE WAFER RECYCLING FOR EPITAXIAL LIFT-OFF THIN-FILM DEVICE USING A SUPERLATTICE EPITAXIAL LAYER

The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer. 1. A growth structure for epitaxial lift-off , comprising:a growth substrate;a protection layer above the growth substrate;a sacrificial layer above the protection layer; andan epilayer above the sacrificial layer,wherein the protection layer comprises at least one superlattice layer.2. The growth structure of claim 1 , wherein the at least one superlattice layer comprises III-V materials.3. The growth structure of claim 1 , wherein the growth substrate comprises GaAs.4. The growth structure of claim 1 , wherein the growth substrate comprises InP.5. The growth structure of claim 3 , wherein each period of the superlattice layer comprises a material combination chosen from AlGaAs/GaAs claim 3 , GaAsP/GaAs claim 3 , InGaAs/GaAs claim 3 , AlGaAs/AlGaAs claim 3 , InGaP/InAlGaP claim 3 , InAlGaP/GaAs claim 3 , and InGaP/GaAs.6. The growth structure of claim 5 , wherein the superlattice contains at least 5 but no more than 60 periods.7. The growth structure of claim 4 , wherein each period of the superlattice layer comprises a material combination chosen from InGaAs/InP claim 4 , InAlP/InP claim 4 , InAlAs/InP claim 4 , and InAlAs/AIAs.8. The growth structure of claim 1 , wherein the protection layer further comprises one or more protective layers.9. The growth structure of claim 8 , wherein the one or more protective layers are positioned between the growth substrate and the superlattice layer.10. The growth structure of claim 9 , wherein the growth substrate comprises GaAs and the one or more ...

Device and method of monolithic integration of microinverters on solar cells

A method of fabricating a photovoltaic cell having a microinverter is provided. The method may include fabricating a monolithic microinverter layer through epitaxy and operably connecting the at least one microinverter layer to at least one photovoltaic cell formed on a photovoltaic layer. A photovoltaic device is also provided. The device may have a photovoltaic layer comprising at least one photovoltaic cell and a microinverter layer comprising at least one microinverter, wherein the microinverter layer was fabricated through epitaxy, the at least one microinverter is configured to be operably connected to at least one photovoltaic cell.

Microfluidic device

The present invention may provide a microfluidic device including a rotatable body; a first chamber positioned in a direction of an inner wall of the body; a second chamber positioned in a direction of an outer wall of the body from the first chamber; and a backflow prevention unit, and wherein a fluid is transferred from the first chamber to the second chamber, and wherein the backflow prevention unit prevents a backflow of the fluid from the second chamber to the first chamber.

APPARATUS AND METHODS FOR CURVED FOCAL PLANE ARRAY

A method of fabricating a curved focal plane array (FPA) includes forming an epitaxial layer including a semiconductor on a release layer. The release layer includes a two-dimensional (2D) material and is disposed on a first substrate. The method also includes forming a metal layer on the epitaxial layer and transferring the epitaxial layer and the metal layer to a second substrate including an elastomer. The method also includes fabricating a plurality of photodetectors from the epitaxial layer and bending the second substrate to form the curved FPA. 1. A method of fabricating a curved focal plane array (FPA) , the method comprising:forming an epitaxial layer comprising a semiconductor on a release layer comprising a two-dimensional (2D) material disposed on a first substrate;forming a metal layer on the epitaxial layer;transferring the epitaxial layer and the metal layer to a second substrate comprising an elastomer;fabricating a plurality of photodetectors from the epitaxial layer; andbending the second substrate to form the curved FPA.2. The method of claim 1 , wherein the semiconductor comprises at least one of silicon claim 1 , InP claim 1 , or GaAs.3. The method of claim 1 , wherein the first substrate comprises the semiconductor.4. The method of claim 1 , wherein the 2D material comprises graphene.5. The method of claim 1 , wherein forming the epitaxial layer comprises forming a p-n junction in the epitaxial layer.6. The method of claim 1 , wherein forming the epitaxial layer comprises forming a heterostructure in the epitaxial layer.7. The method of claim 1 , further comprising:forming the release layer on a third substrate; andtransferring the release layer from the third substrate to the first substrate.8. The method of claim 7 , wherein the third substrate comprises silicon carbide and the 2D material comprises single-crystalline graphene.9. The method of claim 7 , wherein the third substrate comprises copper and the 2D material comprises poly- ...

Monolithic integration of microinverters on solar cells

A method of fabricating a photovoltaic cell having a microinverter is provided. The method may include fabricating a monolithic microinverter layer through epitaxy and operably connecting the at least one microinverter layer to at least one photovoltaic cell formed on a photovoltaic layer. A photovoltaic device is also provided. The device may have a photovoltaic layer comprising at least one photovoltaic cell and a microinverter layer comprising at least one microinverter, wherein the microinverter layer was fabricated through epitaxy, the at least one microinverter is configured to be operably connected to at least one photovoltaic cell.

Devices combining thin film inorganic LEDs with organic LEDs and fabrication thereof

Devices including organic and inorganic LEDs are provided. Techniques for fabricating the devices include fabricating an inorganic LED on a parent substrate and transferring the LED to a host substrate via a non-destructive ELO process. Scaling techniques are also provided, in which an elastomeric substrate is deformed to achieve a desired display size.

Systems and methods for fabricating semiconductor devices via remote epitaxy

A method of manufacturing a semiconductor device includes forming a release layer on a first substrate and the release layer includes a planar organic molecule. The method also includes forming a single-crystalline film on the release layer and transferring the single-crystalline film from the release layer to a second substrate.

Devices combining thin film inorganic LEDs with organic LEDs and fabrication thereof

Devices including organic and inorganic LEDs are provided. Techniques for fabricating the devices include fabricating an inorganic LED on a parent substrate and transferring the LED to a host substrate via a non-destructive ELO process. Scaling techniques are also provided, in which an elastomeric substrate is deformed to achieve a desired display size.

Thin-film thermophotovoltaic cells

Thermophotovoltaic (TPV) systems and devices with improved efficiencies are disclosed herein. In one example, a thermophotovoltaic (TPV) cell includes an active layer; a back-surface reflective (BSR) layer; and a spacer layer positioned between the active layer and back-surface reflective layer.

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Methods and apparatus for vertically stacked multicolor light-emitting diode (led) display

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Strain control for acceleration of epitaxial lift-off

There is disclosed a thin film device for epitaxial lift off comprising a handle and one or more straining layers disposed on the handle, wherein the one or more straining layers induce a curvature of the handle. There is also disclosed a method of fabricating a thin film device for epitaxial lift off comprising, depositing one or more straining layers on a handle, wherein the one or more straining layers induce at least one strain on the handle chosen from tensile strain, compressive strain and near-neutral strain. There is also disclosed a method for epitaxial lift off comprising, depositing an epilayer over a sacrificial layer disposed on a growth substrate; depositing one or more straining layers on at least one of the growth substrate and a handle; bonding the handle to the growth substrate; and etching the sacrificial layer.

Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer

The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer.

Microfluidic device and control equipment for microfluidic device

Provided is a microfluidic device to more easily and effectively operate a valve by improving the structure of valves for controlling a fluid flow more simply and efficiently, which comprises a platform having at least one chamber, at least one flow channel connected to the chambers and transfer fluid, and a valve which opens or closes the flow channel, wherein the valve comprises a body installed in the platform, a blocking plate installed in the body and positioned to face the flow channel to selectively blocks the flow channel, a pressing rod installed to be movable at the inside of the body to press the blocking plate, and a fixing unit installed at the body and fix the pressing rod at a blocking plate pressing position.

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Thermal surface treatment for reuse of wafers after epitaxial lift off

There is disclosed a method of preserving the integrity of a growth substrate comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.

Microfluidic device

The present invention may provide a microfluidic device including a rotatable body; a first chamber positioned in a direction of an inner wall of the body; a second chamber positioned in a direction of an outer wall of the body from the first chamber; and a backflow prevention unit, and wherein a fluid is transferred from the first chamber to the second chamber, and wherein the backflow prevention unit prevents a backflow of the fluid from the second chamber to the first chamber.

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Mechanically stacked tandem photovoltaic cells with intermediate optical filters

A method of fabricating a multi-junction photosensitive device is provided. The method may include fabricating at least two photoactive layers, wherein at least one photoactive layer is fabricated on a transparent substrate, and at least one photoactive layer is fabricated on a reflective substrate, patterning at least one optical filter layer on at least one photoactive layer fabricated on a transparent substrate, and bonding the at least two photoactive layers using cold weld or van der Waals bonding. A multi-junction photosensitive device is also provided. The device may have at least two photoactive layers, and at least one optical filter layer, wherein at least two layers are bonded using cold weld or van der Waals bonding. The optical filter layer may be a Distributed Bragg Reflector.

Deformation sensor unit and skin sensor module comprising same

Fluid control device using centrifugal force

Monolithic remote epitaxy of compound semi conductors and 2d materials

Amorphous, polycrystalline, or single crystal 2D material interlayers are directly grown on the surface of bulk compound semiconductors (III-Nitride, III-V, II-VI, SiC, Silicon, Sapphire, complex oxides, or other oxides, etc) substrate or buffer layered substrates (III-Nitride, III-V, II-VI, SiC, Silicon nitride (SiN), complex oxides, or other oxides, etc), facilitating low contamination III-Nitride, III-V, II-VI, complex oxides, or other oxides epitaxial layer on templates without growth interruption through Molecular Beam Epitaxy (MBE), Metal Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), or other tools. This growth process reduces defects hindering the control of electronic properties of semiconductor epilayers, reduces processing time, and reduces materials cost by reusing the high-cost III-N, III-V, II-VI, SiC, Silicon nitride (SiN), complex oxides, or other oxides templates multiple times after the lift-off process.

Transfer of Epitaxial Compound Semiconductor Layers From a Van Der Waals Interface Using Direct Wafer Bonding

Methods to fabricate compound semiconductor and Ga-face and N-face GaN thin film structures using processes that include remote epitaxy and direct bonding of a semiconductor membrane onto a host substrate. The methods disclosed include transfer by 1) direct wafer bonding, 2) transfer direct bonding by double stressor layer, 3) transfer direct bonding by supporting layer, and 4) transfer direct bonding by SOG layer. Advantageously these direct bonding methods connect two wafer surfaces without requiring any adhesive or additional materials that would otherwise be necessary to promote adhesion between the two adjacent surfaces. These methods support development of bonded platform structures suitable for microelectronics, microtechnologies, sensors, MEMs, optical devices, biotechnologies, and 3D integration. Direct bonding can be performed in conventional wafer bonder.

Wafer transfer apparatus capable of automatic teaching and semiconductor processing system including the same

A wafer transfer apparatus includes a controller, a wafer transfer robot including a hand unit configured to hold a wafer, a driving unit connected to the hand unit and configured to move the wafer, and a sensor unit provided on the driving unit, and a plurality of transfer structures configured to exchange the wafer with the wafer transfer robot, each of the plurality of transfer structures including a plurality of markers recognizable by the sensor unit, where the sensor unit includes a camera sensor recognizing the plurality of markers and a laser sensor configured to measure distances to the plurality of markers by emitting a laser to the plurality of markers and receiving the laser reflected from the plurality of markers.

Device and method of monolithic integration of microinverters on solar cells

A method of fabricating a photovoltaic cell having a microinverter is provided. The method may include fabricating a monolithic microinverter layer through epitaxy and operably connecting the at least one microinverter layer to at least one photovoltaic cell formed on a photovoltaic layer. A photovoltaic device is also provided. The device may have a photovoltaic layer comprising at least one photovoltaic cell and a microinverter layer comprising at least one microinverter, wherein the microinverter layer was fabricated through epitaxy, the at least one microinverter is configured to be operably connected to at least one photovoltaic cell.

Semiconductor substrate processing apparatus

A semiconductor substrate processing apparatus includes a substrate transfer module including a chamber having an internal space extending in a first direction within the chamber, at least one pair of first load ports at opposite sides of the chamber, to face in a second direction intersecting the first direction, and configured to rotate and move a substrate carrier, a load lock at a rear surface of the chamber, and a robot arm configured to move in the first direction in the internal space of the chamber, a transfer chamber connected to the load lock of the substrate transfer module, a plurality of processing chambers connected to the transfer chamber, and a transfer arm inside the transfer chamber, and configured to unload the semiconductor substrate from the load lock and to load the semiconductor substrate into at least one of the plurality of processing chambers.

Deformation sensor unit and skin sensor module comprising same

The present invention relates to a deformation sensor unit and to a skin sensor module comprising same. A deformation sensor unit according to one embodiment of the present invention comprises: a substrate which has a through hole formed therein and comprises a first electrode and a second electrode formed on one side and the other side of the through hole on one surface of the substrate; a piezoelectric element leading out from the first electrode and extending into the through hole; and a piezoelectric resistor which leads out from the second electrode and extends into the through hole and is formed so as to overlap with a section or the whole of the piezoelectric element.

Fluid control device using centrifugal force

The present embodiments relate to a fluid control device using centrifugal force. The fluid control device using centrifugal force includes a fluid control portion comprising a plurality of chambers and controlling a movement of a fluid inside the chamber; a lower fixing portion positioned on a lower portion of the fluid control portion and fixing the plurality of chambers; an upper fixing portion positioned an on upper portion of the fluid control portion and fixing the plurality of chambers; and a fastening member penetrating and fastening the lower fixing portion, the fluid control portion, and the upper fixing portion, wherein the plurality of chambers are disposed to face each other and placed on the lower fixing portion.

Direct Preparation of Pseudo-Graphene on a Silicon Carbide Crystal Substrate

Methods of fabricating a semiconductor structure that includes a pseudo-graphene (PG) layer formed on an SiC substrate to form a reusable PG/SiC substrate for both remote epitaxy and van der Waals epitaxy. Disclosed are two different processes of fabricating a pseudo-graphene layer on an SiC substrate: (1) plasma dry etching after graphitization of the SiC substrate to remove the epitaxial graphene layer and expose the PG; and (2) direct thermalization in which the graphitization process is managed so that substantially only a pseudo-graphene layer forms on the SiC substrate. In both processes, a high-quality PG layer is formed on the SiC substrate. Advantageously, the methods described do not require exfoliation processes to fabricate the PG/SiC substrate, thereby avoiding problems such as contamination by materials (e.g., Ni) that may otherwise damage the PG surface.

Semiconductor processing device and semiconductor processing system

A semiconductor processing device includes a stage configured to receive a bare wafer placed thereon, a laser sensor located above the stage in a vertical direction, orthogonal to an upper surface of the bare wafer, a camera sensor located above the stage in a first direction, a lighting device radiating an imaging region imaged by camera sensor with light, and a controller, configured to rotate the bare wafer using the stage, obtain a plurality of sub-images of the bare wafer captured by the camera sensor to generate an original image of the bare ware, and detect a first defect of the bare wafer using the original image, wherein the controller is configured to detect a second defect of the bare wafer by measuring a distance between the laser sensor and the bare wafer, while rotating the bare wafer using the stage.

Method of detecting contamination and method of determining detection threshold in genotyping experiment

A method of detecting a contamination event by using a blank well and a replicate well occurring during a high-throughput screening is provided. In the method, a logistic regression equation for detecting a contamination in a genotyping experiment is determined, and a BWE (blank well error), an IRF (intraplate replicate failure) and an HWE (Hardy-Weinberg equilibrium) occurring in a blank well and a replicate well of a well plate during the genotyping experiment are checked. The contamination is detected based on a result value of the logistic regression equation, which is calculated by using the BWE, the IRF and the HWE as input variables of the logistic regression equation. Thus, the contamination can be precisely measured by the quantitative indexes without any qualitative analysis.

Particle filtration device and method of particle filtration

A particle filtration device according to an embodiment of the present invention as a particle filtration device of a lab-on-disk of a rotation type includes: a filtration film that separates particles by filtering a sample; a main chamber connected to the inlet surface of the filtration film and supplying the sample to the inlet surface of the filtration film; an outlet chamber that is connected to the outlet surface of the filtration film and accommodates the filtration fluid from which particles are separated while passing through the filtration film; and a waste fluid chamber connected to the outlet chamber and storing the filtration fluid, wherein the particle filtration device includes a first flow path that connects between the outlet chamber and the waste fluid chamber, and a second flow path that connects between the outlet chamber and the waste fluid chamber but is positioned farther from the center of the lab-on-disk than the first flow path.

Particle filtering device and particle filtering method

Apparatus and methods for curved focal plane array

A method of fabricating a curved focal plane array (FPA) includes forming an epitaxial layer including a semiconductor on a release layer. The release layer includes a two-dimensional (2D) material and is disposed on a first substrate. The method also includes forming a metal layer on the epitaxial layer and transferring the epitaxial layer and the metal layer to a second substrate including an elastomer. The method also includes fabricating a plurality of photodetectors from the epitaxial layer and bending the second substrate to form the curved FPA.

Thermal surface treatment for reuse of wafers after epitaxial lift off

There is disclosed a method of preserving the integrity of a growth substrate in a epitaxial lift-off method, the method comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.