GLASS SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME

Disclosed herein are methods for making a thin film device and/or for reducing warp in a thin film device, the methods comprising applying at least one metal film to a convex surface of a glass substrate, wherein the glass substrate is substantially dome-shaped. Other methods disclosed include methods of determining the concavity of a glass sheet. The method includes determining the orientation of the concavity and measuring a magnitude of the edge lift of the sheet when the sheet is supported by a flat surface and acted upon by gravity. Thin film devices made according to these methods and display devices comprising such thin film devices are also disclosed herein. 1. A method for making a thin film device , comprising applying at least one metal film to a convex surface of a glass substrate at a first temperature to form the thin film device , and cooling the thin film device to a second temperature.2. The method of claim 1 , wherein the at least one metal film is chosen from copper claim 1 , silicon claim 1 , amorphous silicon claim 1 , polysilicon claim 1 , ITO claim 1 , IGZO claim 1 , IZO claim 1 , ZTO claim 1 , zinc oxide claim 1 , other metal oxides and doped metals and oxides thereof claim 1 , and combinations thereof.3. The method of claim 1 , wherein the at least one metal film has a thickness ranging from about 1 claim 1 ,000 Å to about 10 claim 1 ,000 Å.4. The method of claim 1 , wherein the at least one metal film has a width ranging from about 1 claim 1 ,000 Å to about 10 claim 1 ,000 Å.5. The method of claim 1 , wherein the glass substrate has a thickness of less than about 3 mm.6. The method of claim 1 , wherein the glass substrate has a thickness of between 0.2 mm and less than about 1 mm.7. The method of claim 1 , wherein the glass substrate is substantially dome-shaped or bowl-shaped.8. The method of claim 1 , wherein the glass substrate has a substantially constant thickness over a length and width of the glass substrate.9. The method of claim 1 ...

Verfahren und vorrichtung zum steuern des gasstromes zur vorreduktion von erzen.

A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device

The invention provides a method for forming a metal film for a thin film device so as to have certain gentle taper angles. The method is an improved fine work method to produce metal films such as light shutter films for thin film devices through the combined production method of a wet-etching step and a dry-etching step. Preliminarily, the cross sectional shape of the resist film is formed so as to have certain taper angles at both end portions. Accordingly, during the dry-etching step, an etchant gas can smoothly flow through along the sidewall of the resist and accordingly the metal film can be formed so as to have gentle taper angles along the flow line of the etchant gas. Thus, it is possible in accordance with the invention to significantly improve the production efficiency and the quality of such thin film devices as the TFTs to be used for the LCDs.

A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device

The invention provides a method for forming a metal film for a thin film device so as to have certain gentle taper angles. The method is an improved fine work method to produce metal films such as light shutter films for thin film devices through the combined production method of a wet-etching step and a dry-etching step. Preliminarily, the cross sectional shape of the resist film is formed so as to have certain taper angles at both end portions. Accordingly, during the dry-etching step, an etchant gas can smoothly flow through along the sidewall of the resist and accordingly the metal film can be formed so as to have gentle taper angles along the flow line of the etchant gas. Thus, it is possible in accordance with the invention to significantly improve the production efficiency and the quality of such thin film devices as the TFTs to be used for the LCDs.

A method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device

The invention provides a method for forming a metal film for a thin film device so as to have certain gentle taper angles. The method is an improved fine work method to produce metal films such as light shutter films for thin film devices through the combined production method of a wet-etching step and a dry-etching step. Preliminarily, the cross sectional shape of the resist film is formed so as to have certain taper angles at both end portions. Accordingly, during the dry-etching step, an etchant gas can smoothly flow through along the sidewall of the resist and accordingly the metal film can be formed so as to have gentle taper angles along the flow line of the etchant gas. Thus, it is possible in accordance with the invention to significantly improve the production efficiency and the quality of such thin film devices as the TFTs to be used for the LCDs.