Conducting polymer/graphene-based material composites, and methods for preparing the composites

A composite comprising a conducting polymer and a graphene-based material is provided. The composite includes a graphene-based material doped with nitrogen or having a nitrogen-containing species grafted thereon, and a conducting polymer arranged on the graphene-based material. Methods of preparing the composite, and electrodes formed from the composite are also provided.

Electronic device and method of manufacturing the same

The embodiment of the invention relates to an electronic device which comprises: a first gallium nitride layer; a second gallium nitride layer contacting the first gallium nitride layer through an array of an opening in a mask on the first gallium nitride layer; and a zinc oxide layer covering on the second gallium nitride layer, wherein covering zinc oxide layer has defect density lower than the first gallium nitride layer. The embodiment of the invention also provides a method of manufacturing the electronic device.

METHOD OF ZINC OXIDE FILM GROWN ON THE EPITAXIAL LATERAL OVERGROWTH GALLIUM NITRIDE TEMPLATE

A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiOmask into stripes oriented in the gallium nitride <1 00> or <11 0> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10/cm, which will find important applications in future electronic and optoelectronic devices. 120-. (canceled)21. An electronic device , comprising:a first gallium nitride layer;a second gallium nitride layer contacting the first gallium nitride layer through an array of openings in a mask on the first gallium nitride layer; andan overlying zinc oxide layer on the second gallium nitride layer, wherein the overlying zinc oxide layer has a lower defect density than a defect density of the first gallium nitride layer.22. The device of claim 21 , wherein the overlying zinc oxide layer comprises an n-type material claim 21 , and wherein the first gallium nitride layer comprises a p-type material.23. The device of claim 21 , wherein the overlying zinc oxide layer comprises a concentration of doping of a group III element of about 10cm.24. The device of claim 21 , further comprising:a first electrode on an exposed surface of the overlying zinc oxide layer; anda second electrode on an exposed surface of the first gallium nitride layer.25. The device of claim 24 , wherein the first electrode comprises at least one of indium or aluminum claim 24 , and wherein the second electrode comprises at least one of nickel claim 24 , ...

CONDUCTING POLYMER/GRAPHENE-BASED MATERIAL COMPOSITES, AND METHODS FOR PREPARING THE COMPOSITES

A composite comprising a conducting polymer and a graphene-based material is provided. The composite includes a graphene-based material doped with nitrogen or having a nitrogen-containing species grafted thereon, and a conducting polymer arranged on the graphene-based material. Methods of preparing the composite, and electrodes formed from the composite are also provided. 1. A composite comprising a conducting polymer and a graphene-based material , the composite comprisinga) a graphene-based material doped with nitrogen or having a nitrogen-containing species grafted thereon, andb) a conducting polymer arranged on the graphene-based material.2. The composite according to claim 1 , wherein the graphene-based material comprises or consists of reduced graphene oxide.3. The composite according to claim 1 , wherein the nitrogen in the graphene-based material doped with nitrogen is pyridinic-N claim 1 , pyrrolic-N claim 1 , graphitic-N claim 1 , or mixtures thereof.4. The composite according to claim 1 , wherein the nitrogen-containing species is —NH.5. The composite according to claim 1 , wherein the conducting polymer is selected from the group consisting of polyaniline claim 1 , polypyrrole claim 1 , polythiophene claim 1 , poly(phenylenevinylene) claim 1 , poly(phenylene sulfide) claim 1 , polydiphenylamine claim 1 , polythienylenevinylene claim 1 , bithiophene claim 1 , polyethylenedioxythiophene claim 1 , polytriazine claim 1 , polyacetylene claim 1 , derivatives thereof claim 1 , and mixtures thereof.6. The composite according to claim 1 , wherein the conducting polymer is polyaniline or polypyrrole claim 1 ,7. The composite according to claim 1 , wherein the amount of conducting polymer in the composite is in the range of 1 to 10 wt %.8. The composite according to claim 1 , wherein the amount of conducting polymer in the composite is 10 wt %.9. The composite according to claim 1 , wherein the conducting polymer is arranged on the graphene-based material as a ...

Highly dispersed metal calatysts

Highly dispersed metal calatysts

The present invention relates to a novel method for preparing a new type of catalyst for the oxidation of CO in a reactant gas or air. The method provides the preparation of a catalyst having nano-sized metal particles and a capping agent deposited on a solid support. The size and distribution of the metal particles can be easily controlled by adjusting reaction condition and the capping agent used. The catalyst prepared has high activity at low temperature toward selective oxidation of CO and is stable over an extended period of time. The catalyst can be used in air filter devices, hydrogen purification processes, automotive emission control devices (decomposition of NOx, x is the integer 1 or 2), F-T synthesis, preparation of fuel-cell electrode, photocatalysis and sensors.

Oxygenated hydrocarbon reforming

The present invention provides a method of reforming oxygenated hydrocarbons, especially glycerol, at temperatures of at least 380 C using a Group VIIIB catalyst, to yield methanol. The method provides a direct route to methanol and there is no requirement to gasify the oxygenated hydrocarbon and subsequently synthesize methanol from the synthesis gas. This represents an efficient route to methanol and provides an economically and environmentally sound way of addressing the problem of utilising glycerol formed as a by-product from biodiesel formation.

Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template

A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning a SiO 2 mask into stripes oriented in the gallium nitride <1 1 00> or <11 2 0> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10 4 /cm −2 , which will find important applications in future electronic and optoelectronic devices.

A composite material and method of preparation thereof

A composite material comprising a plurality of activated carbon particles, a first Iayer comprising a graphene-based material disposed on one or more of the activated carbon particles, and a second Iayer comprising a pseudocapacitive material such as polyaniline and polypyrrole disposed on the first Iayer comprising the graphene-based material. Methods of preparing the composite material and electrode comprising the composite material are also provided.

Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template

Method of reversibly storing h2, and h2-storage system based on metal-doped carbon-based materials

METAL COMPOUND DOPED Li3N COMPOSITIONS CAPABLE OF ABSORPTION AND DESORPTION OF HYDROGEN

Disclosed is a composition capable of absorbing and/or desorbing hydrogen, comprising Li3N and at least one kind of a metal compound. Disclosed are also various methods by which the composition is obtainable.

A transition metal nitride/carbon composite and a method for producing said composite

HALOGEN DOPED Li3N COMPOSITIONS CAPABLE OF ABSORPTION AND DESORPTION OF HYDROGEN

A composition capable of absorbing and desorbing hydrogen comprising Li3N and a halogen, such as Cl2, or a halogen-containing compound where the halogen is covalently bound or anionic. The process for doping Li3N is performed by milling a mixture Of Li3N and the halogen or halogen-containing compound. Examples of halogen-containing compounds include LiCl, NaCl, KCl, MgCl2, AlCl3, AlF3, TiCl4, LiBr, LiF, NH4Cl, CCl4, CaCl2, etc. The hydrogen storage ability of these compounds is reversible. The compounds can be used repeatedly in applications where hydrogen supply is needed.

HALOGEN DOPED Li3N COMPOSITIONS CAPABLE OF ABSORPTION AND DESORPTION OF HYDROGEN

A composition capable of absorbing and desorbing hydrogen comprising Li3N and a halogen, such as Cl2, or a halogen-containing compound where the halogen is covalently bound or anionic. The process for doping Li3N is performed by milling a mixture Of Li3N and the halogen or halogen-containing compound. Examples of halogen-containing compounds include LiCl, NaCl, KCl, MgCl2, AlCl3, AlF3, TiCl4, LiBr, LiF, NH4Cl, CCl4, CaCl2, etc. The hydrogen storage ability of these compounds is reversible. The compounds can be used repeatedly in applications where hydrogen supply is needed.

Method of functionalizing a carbon material

The present invention relates to a method of functionalizing a carbon material. A carbon material is contacted with a carboxylic acid, whereby a mixture is formed. The mixture is heated for a suitable period of time at a temperature below the thermal decomposition temperature of the carbon material.