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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 47. Отображено 47.
26-12-2019 дата публикации

REPROGRAMMABLE QUANTUM PROCESSOR ARCHITECTURE INCORPORATING CALIBRATION LOOPS

Номер: US20190392342A1
Принадлежит: equal1.labs Inc.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin. 1. A quantum computing machine , comprising:one or more quantum computing cores;a circuit operative to calculate error syndromes from an output of said one or more quantum computing cores; andan internal calibration loop including an internal calibration control unit operative to calibrate one or more parameters of control pulses generated and input to said one or more quantum computing cores.2. The quantum computing machine according to claim 1 , wherein said internal calibration loop comprises at least one of a programmable pattern generator and memory based sequence execution unit operative to control said one or more quantum cores.3. The quantum computing machine according to claim 1 , wherein said one or more parameters of control pulses comprises ...

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26-12-2019 дата публикации

QUANTUM SHIFT REGISTER INCORPORATING BIFURCATION

Номер: US20190392913A1
Принадлежит: equal1.labs Inc.

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register. 1. A quantum structure having bifurcation operation , comprising:a semiconductor substrate;a plurality of qdots fabricated on said substrate and arranged sequentially;a bifurcation extending said plurality of qdots into at least a first path of one or more qdots and a second path of one or more qdots;a plurality of control gates fabricated on said substrate for controlling quantum transport between said plurality of qdots and said bifurcation; anda plurality of electric control gate pulses applied to said control gates, said control gate pulses configured such that one or more quantum particles and/or one or more quantum states within said qdots are transported sequentially from one qdot to another as well as to at least said first path and/or said second path.2. The quantum structure according to claim 1 , wherein said bifurcation comprises a qdot shared between at least said first path and said second path.3. The quantum structure according to claim 1 , wherein said bifurcation comprises a tunneling path shared between at least said first path and said second path.4. ...

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02-03-2021 дата публикации

Classic-quantum injection interface device

Номер: US0010934163B2

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively ...

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16-07-2020 дата публикации

Semiconductor Process For Quantum Structures With Staircase Active Well Incorporating Shared Gate Control

Номер: US20200227522A1
Принадлежит: equal1.labs Inc.

A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates. Thus, each gate control circuit is shared across several qubits which are located sufficiently far from each other to prevent interference. This substantially reduces the number of control signals and control logic that required in the structure. 1. A quantum structure , comprising:a substrate;a plurality of substantially undoped silicon multi-sloped staircase structures fabricated on said substrate;a plurality of control gates fabricated on said undoped silicon multi-sloped staircase structures forming multiple quantum dots thereby;one or more classic gate control circuits electrically coupled to control gates in said staircase structures, each gate control circuit operative to generate and apply control pulses to a set of control gates therein;wherein a plurality of control gates spaced a distance apart from each other are configured to share a single gate control circuit; andwherein said multiple quantum dots are electrically floating.2. The quantum structure according to claim 1 , wherein the control gates sharing a single gate ...

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04-03-2021 дата публикации

REPROGRAMMABLE QUANTUM PROCESSOR ARCHITECTURE INCORPORATING QUANTUM ERROR CORRECTION

Номер: US20210067176A1
Принадлежит: equal1.labs Inc.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin. 1. A quantum computing machine , comprising:one or more quantum computing cores; andan internal error correction loop including a quantum error correction unit whereby error detection and/or error syndromes are calculated and fedback to a pattern generator control unit operative to generate control pulses for controlling said quantum computing core to correct errors in quantum computations therein.2. The quantum computing machine according to claim 1 , further comprising:a quantum entanglement unit for configuring controls to perform operations on quantum states therein;a quantum computation including a main path, a complimentary path and an ancillary path;a main detector coupled to said main path and a complimentary detector coupled to said ...

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15-12-2020 дата публикации

Semiconductor controlled quantum interaction gates

Номер: US0010865106B2

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

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26-12-2019 дата публикации

SEMICONDUCTOR CONTROLLED QUANTUM SWAP INTERACTION GATE

Номер: US20190393399A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc. 1. A quantum SWAP interaction gate , comprising:a substrate;a first qubit having two qdots and associated first control gate fabricated on said substrate and including a first interaction qdot;a second qubit having two qdots and associated second control gate fabricated on said substrate and including a second interaction qdot, said second qubit located in sufficient proximity to said second qubit to enable interaction between a first particle in said first qubit and a second particle in said second qubit; anda control circuit operative to generate control signals to simultaneously pulse said first control gate and said second control gate to quickly lower tunnel barriers of said first qubit and said second qubit thereby causing swapping of states therebetween.2. The quantum SWAP interaction gate according to claim 1 , wherein said first particle and said second particle are prepared at a relatively large distance from an interaction location to minimize parasitic interaction therebetween during initialization and subsequently quantum shifted into an interaction position.3. The quantum SWAP interaction gate ...

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26-12-2019 дата публикации

QUANTUM SHIFT REGISTER BASED ANCILLARY QUANTUM INTERACTION GATES

Номер: US20190392912A1
Принадлежит: equal1.labs Inc.

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register. 1. A quantum shift register with ancillary function , comprising:a semiconductor substrate;a first plurality of qdots fabricated on said substrate and arranged sequentially including multiple shifting qdots and a first pair of interaction qdots having quantum states α and β;a first plurality of control gates fabricated on said substrate for controlling said first plurality of qdots;a second plurality of qdots fabricated on said substrate and arranged sequentially including multiple shifting qdots and a second pair of interaction qdots having a Hadamard state;a second plurality of control gates fabricated on said substrate for controlling said second plurality of qdots;a plurality of electric control gate pulses applied to said first plurality of control gates and said second plurality of control gates; andwherein said control gate pulses are configured such that double interaction between said first pair of interaction qdots and said second pair of interaction qdots provides an ancillary function whereby said second pair of interaction qdots have quantum states β and ...

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26-12-2019 дата публикации

SEMICONDUCTOR CONTROLLED QUANTUM PAULI INTERACTION GATE

Номер: US20190393330A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

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01-12-2020 дата публикации

Semiconductor process for quantum structures with staircase active well

Номер: US0010854738B2

A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates. Thus, each gate control circuit is shared across several qubits which are located sufficiently far from each other to prevent interference. This substantially reduces the number of control signals and control logic that required in the structure.

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02-01-2020 дата публикации

Multistage Semiconductor Quantum Detector Circiut Incorporating Anticorrelation

Номер: US20200003925A1
Принадлежит: equal1.labs Inc.

A novel and useful multistage semiconductor quantum detector circuit incorporating an anticorrelation mechanism. The quantum structure has at least the first stage sensor of the detector merged into the quantum structure in order to minimize loading of the quantum structure. The merged quantum structure and detector sensor may be encapsulated in a metal cage in order to provide enhanced rejection of the environmental parasitic electric and/or magnetic fields. A double boot strapping detector front-end configuration substantially eliminates the loading coming from both the gate-source and the gate-drain parasitic capacitances of the first sensor device of the detector that is connected to the quantum structure. In addition, differential detection aids in rejecting leakage, noise, and correlated interference coupling. Both dummy referenced differential detection as well as self-referenced differential detection may be employed in the detector. Moreover, correlated double sampling is used after preamplification in the detector in order to further reject noise and perturbations in the system.

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13-10-2020 дата публикации

Semiconductor controlled quantum swap interaction gate

Номер: US0010800654B2

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

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26-12-2019 дата публикации

PLANAR QUANTUM STRUCTURES UTILIZING QUANTUM PARTICLE TUNNELING THROUGH LOCAL DEPLETED WELL

Номер: US20190392336A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively. 1. A quantum structure , comprising:a substrate;a substantially continuous well constructed on said substrate;a control gate constructed over said well separating said well into a first quantum dot and a second quantum dot; andwherein a potential applied to said control gate is operative to control a local depleted tunneling path connecting said first quantum dot and said second quantum dot.2. The quantum structure according to claim 1 , wherein said substrate is selected from a group comprising a semiconductor claim 1 , silicon on insulator (SOI) claim 1 , and insulating substrate replacement.3. The quantum structure according to claim 1 , wherein said first quantum dot and said second quantum dot have a shape selected from a group comprising a circle claim 1 , an ellipse claim 1 , a square claim 1 , a rectangle claim 1 , a trapezoid claim 1 , two squares diagonally connected at their corners claim 1 , two rectangles diagonally connected at their ...

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26-12-2019 дата публикации

FINFET QUANTUM STRUCTURES UTILIZING QUANTUM PARTICLE TUNNELING THROUGH OXIDE

Номер: US20190393329A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

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22-12-2020 дата публикации

Topological programmable scalable quantum computing machine utilizing chord line quasi unidimensional aperature tunneling semiconductor structures

Номер: US0010873019B2

A novel and useful topological, scalable, and reprogrammable quantum computing machine having one or more quasi-unidimensional chord lines along which the movement of a particle is constrained. The unidimensional passage has localized energy levels that can be controlled with classic electronics. The chord line has two or more quantum dots between which a quasi-unidimensional channel is formed for the particle to travel from one qdot to the other. The tunneling path may be polysilicon, metal, thin oxide, or induced depletion region. The chord line can be in a two-dimensional space for a planar process or in a three-dimensional space with multiple layers of signal processing for a three dimensional process. A quantum structure has semiconductor dots with a layer that provides the chord line for the quantum particle evolution to occur from one dot to the other. The various layers may include polysilicon, metal, thin oxide, or induced depletion region either fully overlapped or partially overlapped ...

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24-11-2020 дата публикации

Multistage semiconductor quantum detector circuit incorporating anticorrelation

Номер: US0010845496B2

A novel and useful multistage semiconductor quantum detector circuit incorporating an anticorrelation mechanism. The quantum structure has at least the first stage sensor of the detector merged into the quantum structure in order to minimize loading of the quantum structure. The merged quantum structure and detector sensor may be encapsulated in a metal cage in order to provide enhanced rejection of the environmental parasitic electric and/or magnetic fields. A double boot strapping detector front-end configuration substantially eliminates the loading coming from both the gate-source and the gate-drain parasitic capacitances of the first sensor device of the detector that is connected to the quantum structure. In addition, differential detection aids in rejecting leakage, noise, and correlated interference coupling. Both dummy referenced differential detection as well as self-referenced differential detection may be employed in the detector. Moreover, correlated double sampling is used after preamplification in the detector in order to further reject noise and perturbations in the system.

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03-11-2020 дата публикации

Semiconductor controlled quantum ancillary interaction gate

Номер: US0010822231B2

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

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09-07-2020 дата публикации

Semiconductor Process Optimized For Quantum Structures

Номер: US20200220065A1
Принадлежит: equal1.labs Inc.

A novel and useful modified semiconductor fabrication technique for realizing reliable semiconductor quantum structures. Quantum structures require a minimization of the parasitic capacitance of the control gate and the quantum well. The modified semiconductor process eliminates the fabrication of the metal, contact, and optionally the raised diffusion layers from the quantum wells, thereby resulting in much lower well and gate capacitances and therefore larger Coulomb blockade voltages. This allows easier implementation of the electronic control circuits in that they can have larger intrinsic noise and relaxed analog resolution. Several processes are disclosed including implementations of semiconductor quantum structures with tunneling through an oxide layer as well as tunneling through a local well depleted region. These techniques can be used in both planar semiconductor processes and 3D, e.g., FinFET, semiconductor processes. A dedicated process masking step is used for realizing the raised diffusions. In addition, the edge of the raised diffusion layer may be placed either in the gate region or the active layer region.

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21-05-2020 дата публикации

Quantum Structures Using Aperture Channel Tunneling Through Depletion Region

Номер: US20200161456A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures having a continuous fully depleted well with control gates that form two quantum dot on either side of the gate. Appropriate potentials are applied to the well and control gate to control quantum tunneling between quantum dots thereby enabling quantum operations to occur. Qubits are realized by modulating applied gate potential to control tunneling through a quantum transport path between two or more sections of the well. Complex structures with a higher number of quantum dots per continuous well and a larger number of wells can be fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. An injection device permits tunneling of a single quantum particle from a classic side to a quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

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18-02-2020 дата публикации

Quantum shift register incorporating bifurcation

Номер: US0010562765B2

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

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26-12-2019 дата публикации

QUANTUM STRUCTURE INCORPORATING ELECTRIC AND MAGNETIC FIELD CONTROL

Номер: US20190392340A1
Принадлежит: equal1.labs Inc.

Novel and useful electronic and magnetic control of several quantum structures that provide various control functions. An electric field provides control and is created by a voltage applied to a control terminal. Alternatively, an inductor or resonator provides control. An electric field functions as the main control and an auxiliary magnetic field provides additional control on the control gate. The magnetic field is used to control different aspects of the quantum structure. The magnetic field impacts the spin of the electron by tending to align to the magnetic field. The Bloch sphere is a geometrical representation of the state of a two-level quantum system and defined by a vector in x, y, z spherical coordinates. The representation includes two angles θ and φ whereby an appropriate electrostatic gate control voltage signal is generated to control the angle θ of the quantum state and an appropriate control voltage to an interface device generates a corresponding electrostatic field in the quantum structure to control the angle φ. 1. A method of controlling the quantum state of one or more qubits realized by a semiconductor quantum interaction gate , the method comprising:generating one or more first electric fields within the quantum interaction gate to control an angle θ of the quantum state thereof in three or more dimensions; andgenerating one or more second electric fields within the quantum interaction gate to provide auxiliary control of an angle φ of the quantum state thereof in three or more dimensions.2. The method according to claim 1 , wherein said one or more first electric fields and said one or more second electric fields are generated by control signals provided by electronic circuitry.3. The method according to claim 2 , wherein said one or more first electric fields and one or more second electric fields are generated by an electrostatic gate control voltage signal selected from a group consisting of a pulse having fast rise and fall times claim ...

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01-12-2020 дата публикации

Quantum shift register structures

Номер: US0010850978B2

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

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10-12-2020 дата публикации

Quantum Shift Register Structures

Номер: US20200385266A1
Принадлежит: equal1.labs Inc.

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register. 1. A quantum shift register , comprising:a semiconductor substrate;a plurality of quantum wells fabricated on said semiconductor substrate forming a plurality of quantum dots arranged in sequential fashion;an oxide layer fabricated over said plurality of quantum wells;a plurality of substantially floating gates fabricated over said oxide layer and at least partially overlaying said plurality of quantum wells, each floating gate operative to provide conduction transport of a quantum particle between adjacent quantum wells via tunneling through said oxide layer; anda plurality of control gates electrostatically coupled to said plurality of floating gates, whereby electric control gate pulses applied to said plurality of control gates control said floating gates between neighboring quantum dots such that one or more particles within said quantum dots are transported from one quantum dot to another.2. The shift register according to claim 1 , wherein said plurality of electric control gate pulses are generated by classic electronic circuitry.3. The shift register according ...

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26-12-2019 дата публикации

QUANTUM STRUCTURE INCORPORATING THETA ANGLE CONTROL

Номер: US20190392338A1
Принадлежит: equal1.labs Inc.

Novel and useful electronic and magnetic control of several quantum structures that provide various control functions. An electric field provides control and is created by a voltage applied to a control terminal. Alternatively, an inductor or resonator provides control. An electric field functions as the main control and an auxiliary magnetic field provides additional control on the control gate. The magnetic field is used to control different aspects of the quantum structure. The magnetic field impacts the spin of the electron by tending to align to the magnetic field. The Bloch sphere is a geometrical representation of the state of a two-level quantum system and defined by a vector in x, y, z spherical coordinates. The representation includes two angles θ and φ whereby an appropriate electrostatic gate control voltage signal is generated to control the angle θ of the quantum state and an appropriate control voltage to an interface device generates a corresponding electrostatic field in the quantum structure to control the angle φ. 1. A method of controlling an angle θ of a quantum state of a quantum interaction gate incorporating a target qubit having at least two qdots and a control gate fabricated therebetween , the method comprising:generating an electrostatic gate control voltage signal in accordance with a desired angle θ; andapplying said electrostatic gate control voltage signal to said control gate to control the angle θ of the quantum state of the target qubit thereby.2. The method according to claim 1 , wherein said electrostatic gate control voltage signal is generated by an individual digital to analog converter (DAC).3. The method according to claim 1 , wherein said electrostatic gate control voltage signal is generated by a shared digital to analog converter (DAC).4. The method according to claim 1 , wherein amplitude and timing of said electrostatic gate control voltage signal are determined in accordance with the desired quantum operation.5. The ...

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08-12-2020 дата публикации

Semiconductor process for quantum structures with staircase active well incorporating shared gate control

Номер: US0010861940B2

A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates. Thus, each gate control circuit is shared across several ...

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14-05-2020 дата публикации

Semiconductor Process for Quantum Structures with Staircase Active Well

Номер: US20200152776A1
Принадлежит: equal1.labs Inc.

A novel and useful modified semiconductor process having staircase active well shapes that provide variable distances between pairs of locations (i.e. quantum dots) resulting in modulation of the quantum interaction strength from weak/negligible at large separations to moderate and then strong at short separations. To achieve a modulation of the distance between pairs of locations, diagonal, lateral, and vertical quantum particle/state transport is employed. As examples, both implementations of semiconductor quantum structures with tunneling through an oxide layer and with tunneling through a local well depleted region are disclosed. These techniques are applicable to both planar semiconductor processes and 3D (e.g. Fin-FET) semiconductor processes. Optical proximity correction is used to accommodate the staircase well layers. Each gate control circuit in the imposer circuitry functions to control more than one set of control gates. Thus, each gate control circuit is shared across several qubits which are located sufficiently far from each other to prevent interference. This substantially reduces the number of control signals and control logic that required in the structure.

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26-12-2019 дата публикации

SEMICONDUCTOR CONTROLLED QUANTUM INTERACTION GATES

Номер: US20190393398A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc. 1. A quantum interaction gate , comprising:a substrate; a first substantially continuous well constructed on said substrate;', 'a first control gate constructed over said first well separating said first well into a first quantum dot and a second quantum dot;', 'wherein a first potential applied to said first control gate is operative to control a first local depleted tunneling path connecting said first quantum dot and said second quantum dot;, 'a first qubit, including a second substantially continuous well constructed on said substrate;', 'a second control gate constructed over said second well separating said second well into a third quantum dot and a fourth quantum dot;', 'wherein a second potential applied to said second control gate is operative to control a second local depleted tunneling path connecting said third quantum dot and said fourth quantum dot; and, 'a second qubit, comprisingwherein said first quantum dot and said third quantum dot are in sufficient proximity to each other to enable interaction between a first particle and a second particle respectively therein.2. The quantum interaction ...

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26-12-2019 дата публикации

CLASSIC-QUANTUM INJECTION INTERFACE DEVICE

Номер: US20190393397A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively. 1. An interface device for interfacing between classic field effect transistor (FET) circuitry and quantum circuitry , comprising:a substrate;a first substantially undoped or low-doped well constructed on said substrate in which both a classic well and a quantum well are realized;a first doped diffusion in or above said first well forming a classic well constituting a classic side of said device;a control gate constructed over at least a portion of said first well wherein a potential applied to said control gate is operative to control a tunneling path thereunder; anda second well formed by a remainder of said first well on an opposite side of said control gate forming a quantum well constituting a quantum side of said device.2. The interface device according to claim 1 , wherein the potential applied to said control gate determines a transport of a single carrier from said classic well to said quantum well.3. The interface device according to claim 1 ...

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21-05-2020 дата публикации

Integrated Quantum Computer Incorporating Quantum Core And Associated Classical Control Circuitry

Номер: US20200160205A1
Принадлежит: equal1.labs Inc.

A novel and useful fully integrated quantum computer containing both quantum core circuitry and associated classical electronic control circuits on the same monolithic die. The integrated quantum computer avoids ESD loading on the quantum structures and minimizes the need for long interconnects with resultant large parasitic inductances and capacitances. Such parasitics reduce the maximum operating frequency of the realized quantum core structures. A cryostat unit functions to provide several temperatures to the quantum computer including a temperature to cool the quantum core to approximately 4° K and the interface SoC to 77° K. Alternatively, the interface circuitry is also integrated with the main QPU on the same die. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations.

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18-02-2020 дата публикации

Quantum shift register based ancillary quantum interaction gates

Номер: US0010562764B2

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

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13-05-2021 дата публикации

Semiconductor Process Optimized For Quantum Structures

Номер: US20210143313A1
Принадлежит: equal1.labs Inc.

A novel and useful modified semiconductor fabrication technique for realizing reliable semiconductor quantum structures. Quantum structures require a minimization of the parasitic capacitance of the control gate and the quantum well. The modified semiconductor process eliminates the fabrication of the metal, contact, and optionally the raised diffusion layers from the quantum wells, thereby resulting in much lower well and gate capacitances and therefore larger Coulomb blockade voltages. This allows easier implementation of the electronic control circuits in that they can have larger intrinsic noise and relaxed analog resolution. Several processes are disclosed including implementations of semiconductor quantum structures with tunneling through an oxide layer as well as tunneling through a local well depleted region. These techniques can be used in both planar semiconductor processes and 3D, e.g., FinFET, semiconductor processes. A dedicated process masking step is used for realizing the raised diffusions. In addition, the edge of the raised diffusion layer may be placed either in the gate region or the active layer region. 1. A quantum device , comprising:a substrate;a substantially undoped silicon layer constructed over said substrate;a control gate constructed over said undoped silicon layer whereby a first quantum dot and a second quantum dot are formed on either side thereof; andwherein both said first quantum dot and said second quantum dot are maintained electrically floating.2. The quantum device according to claim 1 , wherein said undoped silicon layer is electrically insulated from said substrate by an oxide layer sandwiched therebetween.3. The quantum device according to claim 1 , further comprising a doped layer fabricated on said undoped silicon layer on one or both sides of said control gate claim 1 , wherein said doped layer is selected from a group consisting of low doped (n− claim 1 , p−) claim 1 , medium doped (n claim 1 , p) claim 1 , high doped ( ...

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26-12-2019 дата публикации

QUANTUM SHIFT REGISTER STRUCTURES

Номер: US20190392917A1
Принадлежит: equal1.labs Inc.

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register. 1. A quantum shift register , comprisinga semiconductor substrate;a plurality of qdots fabricated on said substrate and arranged sequentially;a plurality of control gates fabricated on said substrate for controlling said plurality of qdots; anda plurality of electric control gate pulses applied to said control gates, said control gate pulses configured such that one or more particles within said qdots are transported sequentially from one qdot to another.2. The shift register according to claim 1 , wherein said plurality of electric control gate pulses are generated by classic electronic circuitry.3. The shift register according to claim 2 , wherein said classic electronic circuit comprises one or more digital to analog converters (DACs).4. The shift register according to claim 1 , further comprising one or more quantum gates claim 1 , at least one quantum gate in relatively close proximity to another quantum gate in a same or separate quantum shift register to enable quantum interaction between particles therebetween.5. The shift register according to claim 1 , ...

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16-07-2020 дата публикации

Semiconductor Quantum Structures Using Preferential Tunneling Through Thin Insulator Layers

Номер: US20200227523A1
Принадлежит: equal1.labs Inc.

Novel and useful semiconductor structures using preferential tunneling through thin insulator layers. Semiconductor quantum structures are implemented using tunneling through a thin oxide layer. The quantum dots are fabricated with semiconductor wells, 3D fins or combinations thereof, while the tunneling path and any optional quantum transport path is implemented with gate layers. The oxide layer between the gate and the well is thin enough in the nanometer semiconductor processes to permit significant tunneling. Having a thin oxide layer on only one side of the well, while having thick oxide layers on all other sides, results in a preferential tunneling direction where tunneling is restricted to a small area resulting in aperture tunneling. The advantage being constraining quantum transport to a very narrow path, which can be approximated as unidimensional. In alternative embodiments, more than one preferential tunneling direction may be used. These techniques can be used in both planar and 3D (e.g., FinFET) semiconductor processes.

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26-01-2021 дата публикации

Semiconductor process optimized for quantum structures

Номер: US0010903413B2

A novel and useful modified semiconductor fabrication technique for realizing reliable semiconductor quantum structures. Quantum structures require a minimization of the parasitic capacitance of the control gate and the quantum well. The modified semiconductor process eliminates the fabrication of the metal, contact, and optionally the raised diffusion layers from the quantum wells, thereby resulting in much lower well and gate capacitances and therefore larger Coulomb blockade voltages. This allows easier implementation of the electronic control circuits in that they can have larger intrinsic noise and relaxed analog resolution. Several processes are disclosed including implementations of semiconductor quantum structures with tunneling through an oxide layer as well as tunneling through a local well depleted region. These techniques can be used in both planar semiconductor processes and 3D, e.g., FinFET, semiconductor processes. A dedicated process masking step is used for realizing the ...

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26-12-2019 дата публикации

SEMICONDUCTOR CONTROLLED QUANTUM ANNEALING INTERACTION GATE

Номер: US20190393033A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc. 1. A quantum annealing interaction gate , comprising:a substrate;a first qubit having two qdots and associated first control gate fabricated on said substrate and including a first interaction qdot;a second qubit having two qdots and associated second control gate fabricated on said substrate and including a second interaction qdot, said second qubit located in sufficient proximity to said second qubit to enable interaction between a first particle in said first qubit and a second particle in said second qubit; anda control circuit operative to generate control signals for said first control gate and said second control gate to slowly lower a tunnel barrier of said first qubit and said second qubit to allow interaction therebetween thereby resulting in synchronized Rabi oscillations between said first qubit and said second qubit.2. The quantum annealing interaction gate according to claim 1 , wherein said first particle and said second particle are prepared at a relatively large distance from an interaction location and subsequently quantum shifted into position.3. The quantum annealing interaction gate ...

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24-11-2020 дата публикации

Quantum shift register structures

Номер: US0010843924B1

A novel and useful controlled quantum shift register for transporting particles from one quantum dot to another in a quantum structure. The shift register incorporates a succession of qdots with tunneling paths and control gates. Applying appropriate control signals to the control gates, a particle or a split quantum state is made to travel along the shift register. The shift register also includes ancillary double interaction where two pairs of quantum dots provide an ancillary function where the quantum state of one pair is replicated in the second pair. The shift register also provides bifurcation where an access path is split into two or more paths. Depending on the control pulse signals applied, quantum dots are extended into multiple paths. Control of the shift register is provided by electric control pulses. An optional auxiliary magnetic field provides additional control of the shift register.

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02-04-2020 дата публикации

Topological Programmable Scalable Quantum Computing Machine Utilizing Chord Line Quasi Unidimensional Aperature Tunneling Semiconductor Structures

Номер: US20200105994A1
Принадлежит: equal1.labs Inc.

A novel and useful topological, scalable, and reprogrammable quantum computing machine having one or more quasi-unidimensional chord lines along which the movement of a particle is constrained. The unidimensional passage has localized energy levels that can be controlled with classic electronics. The chord line has two or more quantum dots between which a quasi-unidimensional channel is formed for the particle to travel from one qdot to the other. The tunneling path may be polysilicon, metal, thin oxide, or induced depletion region. The chord line can be in a two-dimensional space for a planar process or in a three-dimensional space with multiple layers of signal processing for a three dimensional process. A quantum structure has semiconductor dots with a layer that provides the chord line for the quantum particle evolution to occur from one dot to the other. The various layers may include polysilicon, metal, thin oxide, or induced depletion region either fully overlapped or partially overlapped.

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26-12-2019 дата публикации

QUANTUM STRUCTURE INCORPORATING PHI ANGLE CONTROL

Номер: US20190392339A1
Принадлежит: equal1.labs Inc.

Novel and useful electronic and magnetic control of several quantum structures that provide various control functions. An electric field provides control and is created by a voltage applied to a control terminal. Alternatively, an inductor or resonator provides control. An electric field functions as the main control and an auxiliary magnetic field provides additional control on the control gate. The magnetic field is used to control different aspects of the quantum structure. The magnetic field impacts the spin of the electron by tending to align to the magnetic field. The Bloch sphere is a geometrical representation of the state of a two-level quantum system and defined by a vector in x, y, z spherical coordinates. The representation includes two angles θ and φ whereby an appropriate electrostatic gate control voltage signal is generated to control the angle θ of the quantum state and an appropriate control voltage to an interface device generates a corresponding electrostatic field in the quantum structure to control the angle φ. 1. A front gate method of controlling an angle φ in three or more dimensions of a quantum state of a semiconductor quantum structure including one or more qubits , each qubit incorporating at least one interface device , the method comprising:{'sub': 'φ', 'generating a static φ angle control voltage V, signal in accordance with a desired angle φ; and'}{'sub': 'φ', 'applying said φ angle control voltage V, signal to said at least one interface device to generate a corresponding electrostatic field to change the angle φ of the quantum state of said one or more qubits thereby.'}2. The method according to claim 1 , wherein said φ angle control voltage V claim 1 , signal is electrically coupled to a continuous well portion of said quantum interaction gate.3. The method according to claim 1 , wherein said φ angle control voltage V claim 1 , signal is generated by an electronic circuit.4. The method according to claim 3 , wherein said ...

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06-10-2020 дата публикации

Semiconductor controlled quantum annealing interaction gate

Номер: US0010793431B2

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc.

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26-12-2019 дата публикации

SEMICONDUCTOR CONTROLLED QUANTUM ANCILLARY INTERACTION GATE

Номер: US20190393400A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures that provide various control functions. Particles are brought into close proximity to interact with one another and exchange information. After entanglement, the particles are moved away from each other but they still carry the information contained initially. Measurement and detection are performed on the particles from the entangled ensemble to determine whether the particle is present or not in a given qdot. A quantum interaction gate is a circuit or structure operating on a relatively small number of qubits. Quantum interaction gates implement several quantum functions including a controlled NOT gate, quantum annealing gate, controlled SWAP gate, a controlled Pauli rotation gate, and ancillary gate. These quantum interaction gates can have numerous shapes including double V shape, H shape, X shape, L shape, I shape, etc. 1. An ancillary quantum interaction gate , comprising:a substrate;a first qubit having two qdots and associated first control gate fabricated on said substrate and including a first interaction qdot;a second qubit having two qdots and associated second control gate fabricated on said substrate and including a second interaction qdot, said second qubit located in sufficient proximity to said second qubit to enable interaction between a first particle in said first qubit and a second particle in said second qubit; anda control circuit operative to generate control signals for said first control gate and said second control gate whereby said second qubit is placed in an equally distributed state and a tunnel barrier thereof is lowered thereby allowing said first qubit and said second qubit to interact and enter an entangled state resulting in said second qubit mirroring a state of said first qubit.2. The ancillary quantum interaction gate according to claim 1 , wherein said first particle and said second particle are prepared at a relatively large distance from an interaction location to minimize parasitic ...

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15-12-2020 дата публикации

Semiconductor quantum structures using preferential tunneling through thin insulator layers

Номер: US0010868119B2

Novel and useful semiconductor structures using preferential tunneling through thin insulator layers. Semiconductor quantum structures are implemented using tunneling through a thin oxide layer. The quantum dots are fabricated with semiconductor wells, 3D fins or combinations thereof, while the tunneling path and any optional quantum transport path is implemented with gate layers. The oxide layer between the gate and the well is thin enough in the nanometer semiconductor processes to permit significant tunneling. Having a thin oxide layer on only one side of the well, while having thick oxide layers on all other sides, results in a preferential tunneling direction where tunneling is restricted to a small area resulting in aperture tunneling. The advantage being constraining quantum transport to a very narrow path, which can be approximated as unidimensional. In alternative embodiments, more than one preferential tunneling direction may be used. These techniques can be used in both planar ...

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26-12-2019 дата публикации

QUANTUM-CLASSIC DETECTION INTERFACE DEVICE

Номер: US20190392337A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

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26-12-2019 дата публикации

FINFET QUANTUM STRUCTURES UTILIZING QUANTUM PARTICLE TUNNELING THROUGH LOCAL DEPLETED WELL

Номер: US20190393328A1
Принадлежит: equal1.labs Inc.

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively. 1. A 3D quantum structure , comprising:a semiconductor substrate;a semiconductor fin fabricated on said semiconductor substrate;a control gate overlapping said fin separating said fin into a first quantum dot and a second quantum dot; andwherein an electric potential applied to said control gate is operative to control a local depleted tunneling path connecting said first quantum dot and said second quantum dot, allowing or preventing tunneling of a quantum particle between said first quantum dot and said second quantum dot.2. The 3D quantum structure according to claim 1 , wherein said substrate is selected from a group comprising a semiconductor claim 1 , semiconductor on insulator claim 1 , silicon on insulator (SOI) claim 1 , insulating substrate replacement claim 1 , low resistivity claim 1 , standard resistivity claim 1 , high resistivity claim 1 , insulator claim 1 , and isolated with a buried oxide from the 3D quantum structure (SOI).3. The 3D ...

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05-05-2022 дата публикации

REPROGRAMMABLE QUANTUM PROCESSOR ARCHITECTURE INCORPORATING QUANTUM ERROR CORRECTION

Номер: US20220137439A1
Принадлежит: equal1.labs Inc.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.

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26-12-2019 дата публикации

Reprogrammable quantum processor architecture

Номер: US20190392341A1
Принадлежит: Equal1 Labs Inc

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.

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27-09-2022 дата публикации

Finfet quantum structures utilizing quantum particle tunneling through local depleted well

Номер: US11454834B2
Принадлежит: Equal1 Labs Inc

Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.

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21-11-2023 дата публикации

Reprogrammable quantum processor architecture

Номер: US11822163B2
Принадлежит: Equal1 Labs Inc

A novel and useful quantum computing machine includes classic computing and quantum computing cores. A programmable pattern generator executes instructions that control the quantum core. A pulse generator generates the control signals input to the quantum core to perform quantum operations. A partial readout of the quantum state is re-injected into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the readout before being re-injected into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or retrieved from classic memory where sequences of commands are stored in memory. A cryostat unit functions to cool the quantum computing core to approximately 4 Kelvin.

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