01-10-2015 дата публикации
Номер: US20150276480A1
Принадлежит:
Embodiments include devices, systems and processes for using a combined confocal Raman microscope for inspecting a photo resist film material layer formed on the top surface of a layer of a substrate package, to detect border defects between regions of light exposed (e.g., cured) and unexposed (e.g., uncured) resist film material. Use of the confocal Raman microscope may provide a 3D photo-resist chemical imaging and characterization technique based on combining (1) Raman spectroscopy to identify the borders between regions of light exposed and unexposed resist along XY planes, with (2) Confocal imaging to select a Z-height of the XY planes scanned. Such detection provides fast, high resolution, non-destructive in-line inspection, and improves technical development of polymerization profiles of the resist film material. 1. A method for detecting defects in an border between exposed regions of a photo resist layer and unexposed regions of the photo resist layer comprising:inspecting the layer of photo resist with a confocal Raman microscope, wherein the resist is formed a conductive surface and includes borders between exposed regions of the photo resist layer and unexposed regions of the photo resist layer, wherein inspecting includes chemically identifying the borders between the exposed regions and unexposed regions.2. The method of claim 1 , further comprising claim 1 , prior to inspecting claim 1 , exposing a layer of photo resist formed on a conductive surface to light to form borders between exposed regions of the photo resist layer and unexposed regions of the photo resist layer.3. The method of claim 1 , further comprising claim 1 , identifying acceptable and unacceptable borders or trace quality based on the chemically identified borders.4. The method of claim 1 , wherein inspecting includes claim 1 , inspecting a first XY plane of the layer of photo resist at a first Z-height of the photo resist to form a first XY plane mapping of the borders based on the ...
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