THERMALLY CONDUCTIVE SHEET AND SEMICONDUCTOR DEVICE

A thermally conductive sheet of the present invention includes a thermosetting resin (A), and an inorganic filler material (B) which is dispersed in the thermosetting resin (A). In the thermally conductive sheet according to the present invention, the volume resistivity of the cured product of the thermally conductive sheet, which is measured one minute later after an applied voltage of 1000 V is applied thereto on the basis of JIS K 6911 and at a temperature of 175° C., is greater than or equal to 1.0×10 8 Ω·m.

Thermally conductive sheet and semiconductor device

A thermally conductive sheet of the present invention includes a thermosetting resin (A) and an inorganic filler material (B) that is dispersed in the thermosetting resin (A). In the thermally conductive sheet of the present invention, at a frequency of 1 kHz and at a temperature of 100° C. to 175° C., the maximum value of a dielectric loss factor of a cured product of the thermally conductive sheet is less than or equal to 0.030, and a change in relative dielectric constant of the cured product of the thermally conductive sheet is less than or equal to 0.10.

THERMALLY CONDUCTIVE SHEET AND SEMICONDUCTOR DEVICE

A thermally conductive sheet of the present invention includes a thermosetting resin (A) and an inorganic filler material (B) that is dispersed in the thermosetting resin (A). In the thermally conductive sheet of the present invention, at a frequency of 1 kHz and at a temperature of 100° C. to 175° C., the maximum value of a dielectric loss factor of a cured product of the thermally conductive sheet is less than or equal to 0.030, and a change in relative dielectric constant of the cured product of the thermally conductive sheet is less than or equal to 0.10.

Substrate for power module, circuit board for power module, and power module

A substrate for a power module ( 100 ) of the present invention includes a metal substrate ( 101 ), an insulating resin layer ( 102 ) provided on the metal substrate ( 101 ), and a metal layer ( 103 ) provided on the insulating resin layer ( 102 ). The insulating resin layer ( 102 ) includes a thermosetting resin (A) and inorganic fillers (B) dispersed in the thermosetting resin (A), a maximum value of a dielectric loss ratio of the insulating resin layer ( 102 ) at a frequency of 1 kHz and 100° C. to 175° C. is equal to or less than 0.030, and a change in a relative permittivity is equal to or less than 0.10.

Substrat für Spannungsmodul, Leiterplatte für Spannungsmodul und Spannungsmodul

Ein Substrat für ein Spannungsmodul (100) der vorliegenden Erfindung umfasst ein Metallsubstrat (101), eine auf dem Metallsubstrat (101) vorgesehene isolierende Harzschicht (102) und eine auf der isolierenden Harzschicht (102) vorgesehene Metallschicht (103). Die isolierende Harzschicht (102) enthält ein wärmehärtendes Harz (A) und anorganische Füllstoffe (B), die in dem wärmehärtenden Harz (A) dispergiert sind, wobei ein maximaler Wert eines dielektrischen Verlustverhältnisses der isolierenden Harzschicht (102) bei einer Frequenz von 1 kHz und 100°C bis 175°C gleich oder kleiner ist als 0,030 und eine Veränderung der relativen Permittivität gleich oder kleiner ist als 0,10.

Thermally conductive sheet and semiconductor device

A thermally conductive sheet of the present invention includes a thermosetting resin (A), and an inorganic filler material (B) which is dispersed in the thermosetting resin (A). In the thermally conductive sheet according to the present invention, the volume resistivity of the cured product of the thermally conductive sheet, which is measured one minute later after an applied voltage of 1000 V is applied thereto on the basis of JIS K 6911 and at a temperature of 175° C., is greater than or equal to 1.0×108 Ω·m.

Thermally conductive sheet and semiconductor device