Concentric flower reactor

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

GAS-PHASE SYNTHESIS OF WIRES

The present invention provides a method and a system for forming wires () that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires () are grown from catalytic seed particles () suspended in a gas within a reactor. Due to a modular approach wires () of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control. 12-. (canceled)3. A method for forming nanowires comprising:providing metal catalytic seed particles suspended in a gas,providing Group III and Group V gaseous precursors, that comprise constituents of the nanowires to be formed,dissolving the Group III material into the metal catalytic seed particles;making at least one seed crystal at the surface of the at least one catalytic seed particle, andgrowing epitaxially at least one nanowire crystal from the at least one formed seed crystal in a gas-phase synthesis including the gaseous precursors while the catalytic seed particles are suspended in the gas and the constituents of the nanowires to be formed are supersaturated in the at least one catalyst seed particle, wherein the at least one nanowire crystal is a III-V semiconductor crystal.4. The method of claim 3 , wherein the nanowires are formed in a continuous process.5. The method of claim 3 , wherein the nanowires formed are carried by the gas.6. The method of claim 3 , wherein the growth conditions during growth of each nanowire are varied by controlling one or more of parameters associated with: precursor composition claim 3 , precursor molar flow claim 3 , carrier gas flow claim 3 , temperature claim 3 , pressure or dopants claim 3 , such that a nanowire segment is axially grown on a previously formed nanowire portion in a longitudinal direction thereof claim 3 , or a shell is radially grown on the previously formed nanowire portion in ...

LIQUID RECEPTACLE FOR A VEHICLE

A liquid receptacle for a vehicle includes a first unit having a space for containing a liquid and a second unit which is attached to the first unit. The second unit includes a housing which housing accommodates a pump for conveying liquid out from the first unit and a filter for filtering the liquid to be conveyed.

Method for manufacturing a nanowire structure

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires ( 1 ) and applying an electrical field (E) over the population of nanowires ( 1 ), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate ( 2 ). The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires ( 1 ) may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

Recessed contact to semiconductor nanowires

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Nanowire-based solar cell structure

The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbing order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

Concentric flow reactor

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Motor vehicle collision warning system

The invention relates to a motor vehicle collision warning system (1) as well as an automotive vehicle comprising such a motor vehicle collision warning system (1). The motor vehicle collision warning system (1) comprises means (2) for providing a collision warning ahead of a potentially dangerous traffic situation based on a pre-set driver (3) reaction time. Means (4, 6) are provided for determining driver (3) distraction through analyzing an unwound amount of a driver (3) safety belt (5). Means (6) are further provided for adding an additional distracted reaction time to the pre-set driver (3) reaction time based on the analysis of the unwound amount of the driver (3) safety belt (5) such that a warning is provided earlier in case the driver (3) is determined as being distracted.

NANOWIRE-BASED SOLAR CELL STRUCTURE

The solar cell structure according to the present invention comprises a nanowire () that constitutes the light absorbing part of the solar cell structure and a passivating shell () that encloses at least a portion of the nanowire (). In a first aspect of the invention, the passivating shell () of comprises a light guiding shell (), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbing order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures. 14-. (canceled)5. A method of making a solar cell structure comprising a plurality of nanowires , the method comprising:determining a maximum spacing between adjacent nanowires which is shorter than a wavelength of light the solar cell structure is intended to absorb, wherein the nanowires constitute a light absorbing part of the solar cell structure;providing on a substrate the plurality of nanowires positioned at or below the maximum spacing;providing a light guiding shell enclosing at least a portion of the nanowires, the light guiding shell adapted to direct incoming light along the nanowires and through the light absorbing part of the solar well structure.6. The method of claim 5 , wherein the light guiding shell is made of a material with a higher bandgap than the nanowires.7. The method of claim 5 , wherein the maximum spacing between adjacent nanowires is shorter than 400 nm.8. The method of claim 7 , wherein the maximum spacing between adjacent nanowires is shorter than 200 nm.9. The method of claim 8 , wherein the maximum spacing between adjacent nanowires is shorter than 150 nm.10. The method of claim 5 , wherein the nanowires ...

Tank for Working Fluids of Motor Vehicles

The invention relates to a tank for working fluids of motor vehicles, comprising a metal wall, at least one opening therein, and a plastic coating on the inside of the metal wall, wherein the plastic coating extends through the opening at least to the level of the outside of the metal wall.

Concentric flow reactor

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Reservoir For Running Material

In a reservoir for running material, for example a fuel tank for a motor vehicle, a tank fitting is mounted in the tank, for example a fuel level meter. The upper end of the fitting is rigidly attached to the top wall of the tank, while its lower end is guided by guide elements, that allow limited movement of the lower end in a lateral direction. The guide elements are created of a cylindrical extension of a bottom plug that is screwed into a drainage opening in the tank and an element attached to the lower end of the tank fitting that has an opening, into which the cylindrical extension is inserted.

Method for manufacturing a nanowire structure

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires and applying an electrical field over the population of nanowires, whereby an electrical dipole moment of the nanowires makes them align along the electrical field. Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate. The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

RECESSED CONTACT TO SEMICONDUCTOR NANOWIRES

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire. 1at least one semiconductor nanowire having a bottom surface and a top surface;an insulating material which surrounds the semiconductor nanowire and extends above the top surface of the nanowire to create a recess between a sidewall of the insulating material and the top surface of the nanowire; andan electrode filling the recess and ohmically contacting the top surface of the nanowire.. A semiconductor nanowire device, comprising: The present application is a divisional of U.S. application Ser. No. 14/671,666, filed Mar. 27, 2015, which is a divisional of U.S. application Ser. No. 13/723,413, filed on Dec. 21, 2012, now U.S. Pat. No. 9,012,883, which are incorporated herein by reference in their entirety.The present invention relates to semiconductor devices and in particular to nanowire semiconductor devices.Conventionally, electrical contacts for axial nanowire devices are made by encapsulating the nanowires in an insulator and then etching the insulator to expose the tops of each wire. A conducting material is then deposited to make the electrical contacts to the nanowires.The present inventors observed that 1×1 mmprior art InP nanowire solar cells have an average open circuit voltage, Vwhich is significantly lower (500-700 mV) than what would be expected from an ideal InP solar cell (900 mV). In addition to the lower average Vof the nanowire solar cells, the spread in Vis typically large, with a standard deviation of several 100 mV. Thus, nanowire solar cells with a higher open circuit voltage and a small spread in open circuit ...

METHOD AND APPARATUS FOR PROVIDING GRAPHICAL INTERFACES FOR DECLARATIVE SPECIFICATIONS

Example embodiments are directed towards graphical user interfaces for declarative specification languages that express the logic of a computation without describing its control flow. These user interfaces are based on a visual representation of specifications where geometric proximity may be the sole determinant of the resulting configuration. Modularity is improved as each proximal grouping is functionally independent of others. Moreover, a system that executes such specifications may treat groupings independently and execute them in parallel.

GAS-PHASE SYNTHESIS OF WIRES

The present invention provides a method and a system for forming wires () that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires () are grown from catalytic seed particles () suspended in a gas within a reactor. Due to a modular approach wires () of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control. 1. A method for forming nanowires comprising:providing catalytic seed particles suspended in a gas,providing gaseous precursors that comprise constituents of the nanowires to be formed, andmaking at least one seed crystal at the surface of the at least one catalytic particle, andgrowing epitaxially at least one nanowire from the at least one formed seed crystal in a gas-phase synthesis including the gaseous precursors while the catalytic seed particles are suspended in the gas.2. The method of claim 1 , wherein the nanowires are formed in a continuous process.3. The method of claim 1 , wherein the nanowires formed are carried by the gas.4. (canceled)5. The method of claim 1 , wherein the growth conditions during growth of each nanowire are varied by controlling one or more of parameters associated with: precursor composition claim 1 , precursor molar flow claim 1 , carrier gas flow claim 1 , temperature claim 1 , pressure or dopants claim 1 , such that a nanowire segment is axially grown on a previously formed nanowire portion in a longitudinal direction thereof claim 1 , or a shell is radially grown on the previously formed nanowire portion in a radial direction thereof claim 1 , or material is added as a combination of axial and radial growth.6. The method of claim 5 , wherein the growth conditions are varied to obtain hetero structures with respect to composition claim 5 , doping claim 5 , conductivity type within each nanowire.7. The ...

Recessed contact to semiconductor nanowires

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

NANOWIRE- BASED SOLAR CELL STRUCTURE

The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbin order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

CONCENTRIC FLOWER REACTOR

A gas phase nanowire growth apparatus including a reaction chamber (), a first input and a second input ( B, A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires 1. (canceled)2. A method of fabricating semiconductor nanowires comprising:providing a first gas stream to a first reaction chamber, wherein the first gas stream comprises a first precursor for fabricating the semiconductor nanowires;providing a second gas stream to the first reaction chamber, wherein the second gas stream forms a sheath separating the first gas stream from a wall of the first reaction chamber;providing nanowire growth catalyst particles;adding a first dopant gas having a first conductivity type to the first gas stream to grow semiconductor nanowires of the first conductivity type in a gas phase in the first reaction chamber; andadding a second dopant gas having a second conductivity type after the step of adding the first dopant gas to form a p-n or p-i-n junction in the semiconductor nanowires;wherein the semiconductor nanowires comprise single crystal Group III-V or Group II-VI semiconductor nanowires.3. The method of claim 2 , wherein the nanowire growth catalyst particles are provided from an aerosol in at least one of the first gas stream or the second gas stream.4. The method of claim 3 , wherein:the nanowire growth catalyst particles are provided from an aerosol in the first gas stream; andthe first gas stream containing the catalyst particles flows sequentially through one or more reaction zones of the first reaction chamber such that the semiconductor nanowires grow from the catalyst particles and the semiconductor nanowires grown after passage through the reaction zones are carried by the ...

RECESSED CONTACT TO SEMICONDUCTOR NANOWIRES

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire. 1. A method of making a semiconductor nanowire device , comprising:forming at least one semiconductor nanowire, the semiconductor nanowire having a catalyst particle on a top surface of the semiconductor nanowire or a sacrificial portion comprising the top surface;forming an insulating material around the semiconductor nanowire;removing the catalyst particle or the sacrificial portion to recess the top surface of the nanowire below a top surface of the insulating material; andforming an electrode in ohmic contact with the top surface of the nanowire.2. The method of claim 1 , wherein the insulating material is selected from at least one of an insulating shell claim 1 , an insulating layer and an insulating matrix.3. The method of claim 2 , wherein:the insulating material comprises the insulating shell; andforming the insulating shell comprises depositing an insulating layer by atomic layer deposition, spin-on-glass, plasma enhanced chemical vapor deposition, low-pressure chemical vapor deposition or sputtering around and over the semiconductor nanowire.4. The method of claim 3 , wherein the insulating shell is formed by atomic layer deposition of deposition of SiOusing Tris(tert-butoxy)silanol (TTBS) and Trimethylaluminum (TMAl) precursors or atomic layer deposition of deposition of AlOor HfO.5. The method of claim 1 , wherein the insulating material is formed prior to removing the catalyst particle or the sacrificial portion and forming the insulating material results in insulating material covering the catalyst particle or the ...

CONCENTRIC FLOWER REACTOR

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber 1. A method of fabricating semiconductor nanowires comprising:providing a first gas stream to a first reaction chamber, wherein the first gas stream comprises a first precursor for fabricating the semiconductor nanowires;providing a second gas stream to the first reaction chamber, wherein the second gas stream forms a sheath separating the first gas stream from a wall of the first reaction chamber;providing nanowire growth catalyst particles;adding a first dopant gas having a first conductivity type to the first gas stream to grow semiconductor nanowires of the first conductivity type in a gas phase in the first reaction chamber; andadding a second dopant gas having a second conductivity type after the step of adding the first dopant gas to form a p-n or p-i-n junction in the semiconductor nanowires;{'sub': x', '1-x, 'wherein the semiconductor nanowires comprise single crystal Si, Ge, or SiGesemiconductor nanowires, wherein 0≤x≤1.'}2. The method of claim 1 , wherein the nanowire growth catalyst particles are provided from an aerosol in at least one of the first gas stream or the second gas stream.3. The method of claim 2 , wherein:the nanowire growth catalyst particles are provided from an aerosol in the first gas stream; andthe first gas stream containing the catalyst particles flows sequentially through one or more reaction zones of the first reaction chamber such that the semiconductor nanowires grow from the catalyst particles and the semiconductor nanowires grown after passage through the reaction zones are carried by the first gas stream surrounded the second gas stream sheath.4. The method ...

Motor Vehicle Collision Warning System

A motor vehicle collision warning system is described, as well as an automotive vehicle including such a motor vehicle collision warning system. The motor vehicle collision warning system is adapted for analyzing an unwound amount of a driver safety belt and adding an additional distracted reaction time to a pre-set driver reaction time based on the analysis of the unwound amount of the driver safety in order to provide a collision warning earlier than a collision warning based on the pre-set driver reaction time when a driver is determined as being distracted.

Recessed Contact to Semiconductor Nanowires

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire. 1. A semiconductor nanowire device , comprising:at least one semiconductor nanowire having a bottom surface and a top surface;an insulating material which surrounds the semiconductor nanowire; andan electrode ohmically contacting the top surface of the semiconductor nanowire, wherein a contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.2. The device of claim 1 , wherein:the insulating material extends above the top surface of the semiconductor nanowire to create a recess between a sidewall of the insulating material and the top surface of the semiconductor nanowire; andthe electrode fills the recess and contacts only the top surface of the semiconductor nanowire without contacting a sidewall of the semiconductor nanowire.3. The device of claim 1 , wherein:the top surface of the semiconductor nanowire has a diameter or width;the electrode contacts both the top surface and a side portion of the nanowire below the top surface; anda length of the side portion is less than the diameter or width of the at least one semiconductor nanowire such that the contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.4. The device of claim 1 , wherein the electrode and the top surface of the nanowire form the ohmic contact and the electrode extends over a top surface of the insulating material.5. The device of claim 1 , wherein the electrode ...

Gas-phase synthesis method for forming semiconductor nanowires

The present invention provides a method and a system for forming wires ( 1 ) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires ( 1 ) are grown from catalytic seed particles ( 2 ) suspended in a gas within a reactor. Due to a modular approach wires ( 1 ) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.

Concentric flower reactor

A gas phase nanowire growth apparatus including a reaction chamber ( 200 ), a first input and a second input ( 202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

CONCENTRIC FLOWER REACTOR

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Method and apparatus for providing graphical interfaces for declarative specifications

Example embodiments are directed towards graphical user interfaces for declarative specification languages that express the logic of a computation without describing its control flow. These user interfaces are based on a visual representation of specifications where geometric proximity may be the sole determinant of the resulting configuration. Modularity is improved as each proximal grouping is functionally independent of others. Moreover, a system that executes such specifications may treat groupings independently and execute them in parallel.

System and method for determining the material loading condition of a bucket of a material moving machine

A system is provided for determining the material loading condition of a bucket of a material moving machine. The system includes an arrangement for generating a surface model of the surface of the material loaded into the bucket and comparing the surface model with a predefined preferred surface shape associated with the bucket.

METHOD FOR MANUFACTURING A NANOWIRE STRUCTURE

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires ( 1 ) and applying an electrical field (E) over the population of nanowires ( 1 ), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate ( 2 ). The electrical field can be utilised in the deposition. Pn-junctions or any net charge introduced in the nanowires ( 1 ) may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

Recessed contact to semiconductor nanowires

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Motor vehicle collision warning system

A motor vehicle collision warning system is described, as well as an automotive vehicle including such a motor vehicle collision warning system. The motor vehicle collision warning system is adapted for analyzing an unwound amount of a driver safety belt and adding an additional distracted reaction time to a pre-set driver reaction time based on the analysis of the unwound amount of the driver safety in order to provide a collision warning earlier than a collision warning based on the pre-set driver reaction time when a driver is determined as being distracted.

Method for selecting an attack pose for a working machine having a bucket

A method for selecting an attack pose, when loading piled materials, for a working machine having a bucket includes acquiring three dimensional pile data, generating a set of attack poses, generating a bucket trajectory through the pile for each attack pose, for each attack pose in the set of attack poses, calculating a measure of a convexity of the pile surface for an area of the pile surface delimited by a bucket width and a vertical projection of the bucket trajectory, and selecting an attack pose based on the measure of convexity.

SELENOPROTEIN P IN HEART FAILURE

A method for assessing risk in a subject having heart failure that is (i) risk for getting a cardiovascular event and/or (ii) risk of worsening heart failure condition and/or (iii) assessing risk for mortality, and/or (iv) assessing risk of hospitalization or re-hospitalization due to heart failure, involves: 1. A method for assessing a risk in a subject having heart failure that is (i) the risk for getting a cardiovascular event and/or (ii) the risk of worsening heart failure condition and/or (iii) assessing the risk for mortality and/or (iv) assessing the risk of hospitalization or re-hospitalization due to heart failure , comprisinga) determining the level and/or the amount of Selenoprotein P and/or fragments thereof in a sample of said subject,b) correlating the determined level and/or the amount of Selenoprotein P and/or fragments thereof in a subject having heart failure with (i) the risk for getting a cardiovascular event and/or (ii) with the risk of worsening heart failure condition and/or (iii) with the risk for mortality, and/or (iv) with the risk of hospitalization or re-hospitalization due to heart failure.2. A method for assessing a risk in a subject having heart failure that is (i) the risk for getting a cardiovascular event and/or (ii) the risk of worsening heart failure condition and/or (iii) assessing the risk for mortality claim 1 , and/or (iv) assessing the risk of hospitalization or re-hospitalization due to heart failure according to claim 1 , wherein in a subject having heart failure (i) the risk for getting a cardiovascular event and/or (ii) the risk of worsening heart failure condition and/or (iii) the risk for mortality claim 1 , and/or (iv) the risk of hospitalization or re-hospitalization due to heart failure is enhanced claim 1 , when the determined level and/or the amount of Selenoprotein P and/or fragments thereof in a sample of said subject is below a threshold.3. A method for assessing a risk in a subject having heart failure that is ...

METHOD FOR SELECTING AN ATTACK POSE FOR A WORKING MACHINE HAVING A BUCKET

A method for selecting an attack pose, when loading piled materials, for a working machine having a bucket includes acquiring three dimensional pile data, generating a set of attack poses, generating a bucket trajectory through the pile for each attack pose, for each attack pose in the set of attack poses, calculating a measure of a convexity of the pile surface for an area of the pile surface delimited by a bucket width and a vertical projection of the bucket trajectory, and selecting an attack pose based on the measure of convexity. 193133. Method for selecting an attack pose ( ,α) , when loading piled materials , for a working machine () having a bucket () , said method including the steps of:{'b': '10', 'acquiring three dimensional pile data (P) (S);'}{'b': 9', '20, 'generating a set of attack poses (,α) (S);'}{'b': 13', '1', '9', '30, 'generating a bucket trajectory () through said pile () for each attack pose (,α) (S); characterized by'}{'b': 9', '9', '15', '17', '19', '21', '13', '40, 'sub': 'C', 'for each attack pose (,α) in said set of attack poses (,α), calculating a measure of a convexity (C) of the pile surface for an area () of the pile surface () delimited by a bucket width () and a vertical projection () of the bucket trajectory () (S); and'}{'b': '9', 'sub': 'C', 'selecting an attack pose (,α) based on said measure of convexity (C).'}2. Method according to claim 1 , characterized by:{'sub': L', 'C', 'R, 'b': 33', '1', '21', '13, 'determining sweep volumes (V, V, V) of segments of said bucket (), a sweep volume being a volume of the pile () within a sweep area defined by a width of a segment and length extension () of the trajectory (); and'}{'sub': C', 'L', 'C', 'R, 'b': '33', 'calculating said measure of convexity (C) based on said sweep volumes (V, V, V) of segments of said bucket ().'}399. Method according to or claim 1 , characterized by additionally determining a side load measure (C) for each attack pose ( claim 1 ,α) claim 1 , and selecting an ...

Method for providing an alert to a driver and an alert system

The disclosure relates to a method for providing an alert to a driver of a vehicle. The method may comprise a) receiving information from a vehicle-to-vehicle communication unit relating to a deceleration of a vehicle-in-front; b) detecting a decrease in distance to a closest vehicle-in-front by a vehicle sensor system in the vehicle; and c) issuing an alert to the driver of the vehicle as a response to step b.

CONCENTRIC FLOW REACTOR

A gas phase nanowire growth apparatus including a reaction chamber (), a first input and a second input ( B, A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires 1. A gas phase nanowire growth apparatus comprising:a reaction chamber;a first input; anda second input,wherein the first input is located concentrically within the second input and the first and second inputs are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.2. The apparatus of claim 1 , wherein the second input further comprises a porous frit.3. The apparatus of claim 1 , wherein the apparatus further comprises a first output and a second output located at an opposite wall of the reaction chamber from the first and second input and wherein the first output is located concentrically within the second output.4. The apparatus of claim 3 , wherein the second output further comprises one porous frit or a plurality of porous frits.5. The apparatus to claim 3 , further comprising one or more heaters configured to heat the reaction chamber and one or more heaters configured to heat the first input and the second inputs.6. The apparatus of claim 1 , wherein the reaction chamber is a cylinder; the first input is configured to provide a precursor gas in the middle of the cylinder; and the second input is configured to provide a sheath gas around a periphery of the cylinder.7. The apparatus of claim 6 , further comprising a third input claim 6 , wherein the third input is configured to provide an aerosol comprising catalyst particles between the precursor gas and the sheath gas.8. The apparatus of claim ...

SYSTEM AND METHOD FOR DETERMINING THE MATERIAL LOADING CONDITION OF A BUCKET OF A MATERIAL MOVING MACHINE

A system is provided for determining the material loading condition of a bucket of a material moving machine. The system includes an arrangement for generating a surface model of the surface of the material loaded into the bucket and comparing the surface model with a predefined preferred surface shape associated with the bucket. 1. A system for determining the material loading condition of a bucket of a material moving machine , wherein the system comprises means for generating a surface model of the surface of the material loaded into the bucket and comparing the surface model with a predefined preferred surface shape associated with the bucket.2. The system according to claim 1 , wherein the system is adapted to generate a three-dimensional model of the surface of the material loaded into the bucket.3. The system according to claim 1 , wherein the predefined preferred surface shape is dependent on the type of material loaded into the bucket.4. The system according to claim 3 , wherein the predefined preferred surface shape comprises information as regards a nominal angle of repose for the material loaded into the bucket.5. The system according to claim 1 , wherein the system is adapted to determine a spillage parameter indicative of the risk of spilling and/or a fill factor parameter indicative of the material fill factor.6. The system according to claim 1 , wherein the system is adapted to issue a signal indicative of the material loading condition claim 1 , the system preferably being adapted to issue a signal indicative of whether or not the bucket is appropriately loaded.7. The system according to claim 1 , wherein the system comprises a perception assembly for generating the surface model claim 1 , the perception assembly claim 1 , preferably comprising at least one of a camera and a laser sensor.8. The system according to claim 1 , when dependent on claim 1 , wherein the perception assembly is adapted to generate the three-dimensional surface model of the ...

HIGH-THROUGHPUT CONTINUOUS GAS-PHASE SYNTHESIS OF NANOWIRES WITH TUNABLE PROPERTIES

A method for forming wires, including providing catalytic seed particles suspended in a gas, providing gaseous precursors that comprise constituents of the wires to be formed and growing the wires from the catalytic seed particles. The wires may be grown in a temperature range between 425 and 525 C and may have a pure zincblende structure. The wires may be III-V semiconductor nanowires having a Group V terminated surface and a <111>B crystal growth direction. 1. A method for forming wires , comprising:providing catalytic seed particles suspended in a gas;providing gaseous precursors that comprise constituents of the wires to be formed; andgrowing the wires from the catalytic seed particles,characterized in at least one of growing the wires in a temperature range between 425 and 525 C, or the wires having a pure zincblende structure.2. The method of claim 1 , wherein the wires comprise one or more of Ga claim 1 , Al or In and one or more of As claim 1 , P claim 1 , N or Sb.3. The method of claim 1 , wherein the wires comprise GaAs claim 1 , GaP claim 1 , GaN claim 1 , GaSb claim 1 , AlP claim 1 , AlAs claim 1 , AlN claim 1 , AlSb claim 1 , InP claim 1 , InAs claim 1 , InSb or ternary or quaternary combinations thereof.4. The method of claim 1 , wherein the wires are single crystal and have essentially no stacking faults.5. The method of claim 1 , wherein the wires grow at a rate greater than 0.1 microns/sec using the gaseous precursors while the catalytic seed particles are suspended in the gas.6. The method of claim 5 , wherein the growth rate comprises 0.5 to 1 microns/sec.7. The method of claim 1 , wherein the wires comprise semiconductor nanowires having a width or diameter less than 1 micron and the seed particles comprise metal nanoparticles.8. The method of claim 1 , wherein the wires comprise III-V semiconductor nanowires having a width or diameter of 2-500 nm claim 1 , and the seed particles comprise metal nanoparticles provided in a form of an aerosol.9. ...

METHOD FOR MANUFACTURING A NANOWIRE STRUCTURE

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires and applying an electrical field over the population of nanowires, whereby an electrical dipole moment of the nanowires makes them align along the electrical field. Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate. The 10 electrical field can be utilised in the deposition. Pn-junctions or any net charge introduced in the nanowires may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth. 1. A method of fabricating a nanowire device , comprising:growing a plurality of nanowires from seed particles using a gas phase synthesis process;transferring the plurality of nanowires to a liquid to form a nanowire dispersion;aligning the plurality of nanowires such that at least a majority of the plurality of nanowires are aligned vertically with respect to a surface such that the same end of at least a majority of the plurality nanowires points in the same direction; andfixing the plurality of nanowires in a polymer on a substrate to form a film comprising a plurality of fixed, aligned nanowires on the substrate.2. The method of claim 1 , further comprising forming an electrical contact operatively connected to at least a portion of the plurality of fixed claim 1 , aligned nanowires.3. The method of claim 1 , wherein the plurality of nanowires comprise unipolar nanowires.4. The method of claim 3 , wherein the plurality of nanowires comprise a Schottky diode formed between each respective nanowire ...

SYSTEM AND METHOD FOR DETERMINING A MATERIAL ENTITY TO BE REMOVED FROM A PILE AND A CONTROL UNIT FOR A WORKING MACHINE COMPRISING SUCH A SYSTEM

A system for determining a material entity to be removed from a pile by an implement of a material moving machine is provided. The system includes an arrangement for generating a current pile shape of the actual surface shape of the pile. Moreover, the system is adapted to determine a nominal pile shape of at least a portion of the pile. The nominal pile shape is determined on the basis of at least the current pile shape and information regarding the material type of the pile. Further the system is adapted to determine a surplus volume between the nominal pile shape and the current pile shape and the system is adapted to determine the material entity to be removed from the pile on the basis of the surplus volume. 1. A system for determining a material entity to be removed from a pile by means of an implement of a material moving machine , the system comprising means for generating a pile shape model representing the actual shape of the pile , moreover , the system being adapted to determine a nominal pile shape of at least a portion of the pile , the nominal pile shape being determined on the basis of at least the pile shape model and information regarding the material type of the pile , the system being adapted to determine a surplus volume between the nominal pile shape and the pile shape model , the system being adapted to determine the material entity to be removed from the pile on the basis of the surplus volume.2. The system according to claim 1 , wherein the information regarding the material type of the pile comprises a nominal angle of repose for the material type.3. The system according to claim 1 , wherein the system is adapted to determine an excluding portion of the pile which should be excluded from a portion of the nominal pile shape which portion is determined by the information regarding the material type of the pile.4. The system according to claim 3 , wherein the system is adapted to determine a horizontal main extension direction of the excluding ...

load carrier foot

Lastträgerfuß der Art, welcher an einander gegenüberliegenden Seitenrandabschnitten eines Fahrzeugdaches zum Befestigen eines Lastträgers an dem Fahrzeug angeordnet wird und aufweist: eine Klemmvorrichtung (4, 5) zum Festklemmen des Lastträgers an dem Fahrzeug und eine Betätigungsvorrichtung zum Betätigen der Klemmvorrichtung, wobei die Betätigungsvorrichtung eine Schraube (6) und einen Griff (7) zum Drehen der Schraube aufweist, wobei der Griff (7) in Form einer Abdeckung (8) ausgebildet ist, welche über eine Verbindung (9) mit der Schraube (6) verbunden ist und welche mittels der Verbindung zwischen einer geschlossenen Position, in welcher Zugriff auf die Betätigungsvorrichtung verhindert wird, und einer freien Position, in welcher die Schraube (6) durch Rotation der Abdeckung (8) drehbar ist, verlagerbar ist, dadurch gekennzeichnet, daß die Verbindung (9) ein Verbindungselement (10) aufweist, welches an seinem einen Ende mit der Schraube (6) über ein erstes Gelenk (11, 23) verbunden ist, dessen Schwenkachse (25) quer in bezug auf die Längsrichtung (12) der Schraube...

Method and system for determining the concentration of a urea solution

Méthode et système pour déterminer la concentration d’une solution d’urée La présente invention se rapporte à une méthode ainsi qu’à un système pour déterminer la concentration d’une solution d’urée, en particulier dans un système de réduction catalytique sélective, à partir de la température de changement d’état entre une phase solide vers une phase liquide ou d’une phase liquide vers une phase solide de la solution d’urée. Figure pour l’abrégé : Fig. 3 Method and system for determining the concentration of a urea solution The present invention relates to a method as well as a system for determining the concentration of a urea solution, in particular in a selective catalytic reduction system, from the change of state temperature between a solid phase to a liquid phase or from a liquid phase to a solid phase of the urea solution. Figure for the abstract: Fig. 3

Concentric flow reactor

Method for selecting an attack pose for a working machine having a bucket

Method for selecting an attack pose, when loading piled materials, for a working machine having a bucket, said method including the steps of: - acquiring three dimensional pile data; - generating a set of attack poses; - generating a bucket trajectory through said pile for each attack pose; characterized by - for each attack pose in said set of attack poses, calculating a measure of a convexity of the pile surface for an area of the pile surface delimited by a bucket width and a vertical projection of the bucket trajectory; and - selecting an attack pose based on said measure of convexity.

Lithium-ion battery comprising nanowires

The invention relates to a lithium-ion battery, comprising two electrodes and an electrolyte disposed between said two electrodes, wherein one of said electrodes comprises at least one elastic film that makes up outermost layer of said electrode such that said film abuts against the electrolyte. A plurality of gas-phase synthesized nanowires comprising silicon is partially immersed in said film and extend from said film into the electrolyte. Said plurality of nanowires is elastically deformable at least in the radial direction of the nanowires. The invention further relates to a method of manufacturing a lithium-ion battery.

Reservoir for motor vehicle, has bottom plug and lower end part of fittings designed with guide units, where one unit is designed with opening that is inserted with projecting part on other unit when plug closes drainage opening

The reservoir has side walls that connect a bottom wall to a top wall, where a drainage opening is made in the bottom wall. A bottom plug and a lower end part of fittings are designed with interacting guide units (12, 15), where one guide unit is designed with an opening that is inserted with a projecting part (10) on the other guide unit when the plug closes the drainage opening.

Selenoprotein p in heart failure

Subject matter of the present invention is a method for assessing a risk in a subject having heart failure that is (i) the risk for getting a cardiovascular event and/or (ii) the risk of worsening heart failure condition and/or (iii) assessing the risk for mortality, in particular cardiovascular mortality, and/or (iv) assessing the risk of hospitalisation or re-hospitalisation due to having heart failure, comprising a) determining the level and/or the amount of Selenoprotein P and/or fragments thereof in a sample of said subject, b) correlating the determined level and/or the amount of Selenoprotein P and/or fragments thereof in a subject having heart failure with (i) the risk for getting a cardiovascular event and/or (ii) with the risk of worsening heart failure condition and/or (iii) with the risk for mortality, in particular cardiovascular mortality, and/or (iv) with the risk of hospitalisation or re-hospitalisation due to heart failure. Subject matter of the present invention includes stratification of patients and treatment methods for heart failure patients at high risk (i) for getting a cardiovascular event and/or (ii) of worsening heart failure condition and/or (iii) for mortality, in particular cardiovascular mortality, and/or (iv) of hospitalisation or re-hospitalisation due to heart failure.

Gas-phase synthesis of wires

The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.

Method for providing an alert to a driver and an alert system

The invention relates to a method for providing an alert to a driver of a vehicle, the method comprising the steps of: a) receiving information from vehicle-to-vehicle communication unit relating to a deceleration of a vehicle-in-front b) detecting a decrease in distance to a closest vehicle-in-front by a vehicle sensor system in the vehicle; c) issuing an alert to the driver of the vehicle as a response to step b.

Particle deposition apparatus and method for forming nanostructures

A fast method of creating nanostructures comprising the steps of forming one or more electrically-charged regions (5) of predetermined shape on a surface (1) of a first material, by contacting the regions with a stamp for transferring electric charge, and providing electrically charged nanoparticl es (7) of a second material, and permitting the particles to flow in the vicini ty of the regions, to be deposited on the regions.

Concentric flow reactor

A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires

Tank für betriebsmittel von kraftfahrzeugen

System and method for determining a material entity to be removed from a pile and a control unit for a working machine comprising such a system

System and method for determining a material entity to be removed from a pile and a control unit for a working machine comprising such a system

The present invention relates to a system (18) for determining a material entity (32) to be removed from a pile (16) by means of an implement (12) of a material moving machine (10). The system (18) comprises means for generating a current pile shape (26) of the actual surface shape of the pile (16). Moreover, the system (18) is adapted to determine a nominal pile shape (28) of at least a portion of the pile (16). The nominal pile shape (28) is determined on the basis of at least the current pile shape (26) and information regarding the material type of the pile (16). Further the system (18) is adapted to determine a surplus volume (30) between the nominal pile shape (28) and the current pile shape (26) and the system (18) is adapted to determine the material entity (32) to be removed from the pile (16) on the basis of the surplus volume (30).

Selenoproteína p em insuficiência cardíaca

selenoproteína p em insuficiência cardíaca. a presente invenção refere-se a um método para avaliar um risco em um indivíduo que tem insuficiência cardíaca que está em (i) risco de ter um evento cardiovascular e/ou (ii) risco de piorar a condição de insuficiência cardíaca e/ou (iii) para avaliar o risco de mortalidade, em particular a mortalidade cardiovascular, e/ou (iv) para avaliar o risco de hospitalização ou re-hospitalização devido ao fato de ter a insuficiência cardíaca, o qual compreende: a) a determinação do nível e/ou da quantidade de selenoproteína p e/ou fragmentos da mesma em uma amostra do dito indivíduo, b) a correlação do nível e/ou da quantidade determinados de selenoproteína p e/ou fragmentos da mesma em um indivíduo que tem insuficiência cardíaca com (i) o risco de ter um evento cardiovascular e/ou (ii) com o risco de piorar a condição de insuficiência cardíaca e/ou (iii) com o risco de mortalidade, em particular a mortalidade cardiovascular, e/ou (iv) com o risco de hospitalização ou re-hospitalização devido à insuficiência cardíaca. o objeto da presente invenção inclui a estratificação de pacientes e os métodos de tratamento para pacientes com insuficiência cardíaca com um risco elevado (i) de ter um evento cardiovascular e/ou (ii) piorar a condição de insuficiência cardíaca e/ou (iii) de mortalidade, em particular a mortalidade cardiovascular, e/ou (iv) de hospitalização ou re-hospitalização devido à insuficiência cardíaca.

A liquid receptacle for a vehicle

The invention relates to a liquid receptacle for a vehicle. The liquid receptacle comprises a first unit having a space for containing a liquid and a second unit which is attached to the first unit. The second unit comprises a housing which housing accommodates a pump for conveying liquid out from the first unit and a filter for filtering the liquid to be conveyed.

System and method for determining a material entity to be removed from a pile and a control unit for a working machine comprising such a system

Method for manufacturing a nanowire structure

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires (1) and applying an electrical field (E) over the population of nanowires (1), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate (2). The electrical field can be utilised in the deposition. Pn-junctions or any net charge introduced in the nanowires (1) may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.