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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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23-06-2020 дата публикации

Radiation shield

Номер: US0010692741B2
Автор: Melvin Verbaas, VERBAAS MELVIN, Verbaas, Melvin
Принадлежит: ASM IP Holdings B.V., ASM IP HOLDING BV, ASM IP HOLDINGS B V, ASM IP Holding B.V.

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

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Номер записи: 1
09-06-2022 дата публикации

FURNACE WITH METAL FURNACE TUBE

Номер: US20220178024A1
Автор: Melvin Verbaas, Anthony Dip
Принадлежит:

An exemplary apparatus includes a metal furnace tube having an open first end and an opposite second end. The metal furnace tube includes an inner chamber, a fluid inlet to intake a fluid into the inner chamber, and a fluid outlet to exhaust the fluid from the inner chamber, the inner chamber to support a plurality of substrates within the metal furnace tube. The apparatus includes a first base plate or flange back plate coupling the fluid inlet to the inner chamber; a second base plate or flange back plate coupling the fluid outlet to the inner chamber; and a furnace includes a heater to heat the metal furnace tube, the metal furnace tube being mounted within the furnace and the heater being disposed outside the metal furnace tube. 1. An apparatus comprising:a metal furnace tube having an open first end and an opposite second end, the metal furnace tube comprising an inner chamber, a fluid inlet configured to intake a fluid into the inner chamber, and a fluid outlet configured to exhaust the fluid from the inner chamber, the inner chamber configured to support a plurality of substrates within the metal furnace tube;a first base plate or flange back plate coupling the fluid inlet to the inner chamber;a second base plate or flange back plate coupling the fluid outlet to the inner chamber; anda furnace comprising a heater configured to heat the metal furnace tube, the metal furnace tube being mounted within the furnace and the heater being disposed outside the metal furnace tube.2. The apparatus of claim 1 , wherein the furnace is a chemical vapor deposition (CVD) claim 1 , an atomic layer deposition (ALD) furnace claim 1 , or an annealing furnace.3. The apparatus of claim 1 , wherein an inside surface of the metal furnace tube is roughened to have a surface roughness of at least 0.1 Ra.4. The apparatus of claim 1 , wherein an inside surface of the metal furnace tube is coated with a layer comprising silicon nitride claim 1 , titanium nitride claim 1 , tantalum ...

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Номер записи: 2
21-07-2022 дата публикации

METHODS FOR DEPOSITING A TRANSITION METAL NITRIDE FILM ON A SUBSTRATE BY ATOMIC LAYER DEPOSITION AND RELATED DEPOSITION APPARATUS

Номер: US20220228264A1
Автор: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
Принадлежит:

An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature ...

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Номер записи: 3
07-05-2024 дата публикации

Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus

Номер: US0011976361B2
Автор: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
Принадлежит: ASM IP Holding B.V.

An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

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Номер записи: 4
04-06-2024 дата публикации

Susceptor having cooling device

Номер: US0012002661B2
Автор: Yukihiro Mori, Melvin Verbaas
Принадлежит: ASM IP Holding B.V.

A susceptor includes a plate part, a first heater for heating a first portion of the plate part, a second heater for heating a second portion of the plate part, and a heat insulating portion for thermally insulating the first portion and the second portion from each other on an upper surface side of the plate part.

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Номер записи: 5
10-06-2021 дата публикации

MULTI-POLAR CHUCK FOR PROCESSING OF MICROELECTRONIC WORKPIECES

Номер: US20210175108A1
Автор: Melvin Verbaas, VERBAAS MELVIN, Verbaas, Melvin
Принадлежит: Tokyo Electron Ltd

Methods and system are disclosed for multipolar electrostatic chucks (ESCs) that provide improved clamping of microelectronic workpieces within processing equipment. The disclosed multipolar ESCs effectively clamp microelectronic workpieces including those with significant bows. Multipolar ESC embodiments include a dielectric body and multiple sets of electrodes formed within the dielectric body. Further, multiple electric fields are generated between the multiple sets of electrodes to facilitate the processing of the microelectronic workpiece. For example, a voltage generator can be used to apply voltages to the multiple sets of electrodes to generate the multiple electric fields. These electric fields can migrate charge to edges of a microelectronic workpiece and can be used to facilitate clamping of the microelectronic workpiece and/or to reduce bow in a microelectronic workpiece. Sensors can also be used to help control and improve the operation of the multipolar ESCs.

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Номер записи: 6
20-12-2022 дата публикации

Vertical batch furnace assembly comprising a cooling gas supply

Номер: US0011530876B2
Автор: Melvin Verbaas, Christianus G. M. de Ridder
Принадлежит: ASM IP Holding B.V.

A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

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Номер записи: 7
19-04-2022 дата публикации

Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus

Номер: US0011306395B2
Автор: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
Принадлежит: ASM IP Holding B.V.

An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.

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Номер записи: 8
24-11-2022 дата публикации

RADIATION SHIELD

Номер: US20220375772A1
Автор: Melvin Verbaas
Принадлежит:

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

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Номер записи: 9
27-05-2021 дата публикации

THERMAL TREATMENTS USING A PLURALITY OF EMBEDDED RESISTANCE TEMPERATURE DETECTORS (RTDs)

Номер: US20210159102A1
Автор: Melvin Verbaas, VERBAAS MELVIN, Verbaas, Melvin
Принадлежит:

Bake modules and related heaters for the processing of microelectronic workpieces, such as semiconductor substrates, are disclosed that include a plurality of resistance temperature detectors (RTDs) embedded into the heater to sense temperatures in different zones of the heater. Related methods are also disclosed. 1. A bake module , comprising:a heater configured to thermally treat a substrate mounted on or above an upper surface of the heater; anda plurality of resistance temperature detectors (RTDs) embedded within the heater prior to sintering the heater and configured to sense temperatures for different zones of the heater.2. The bake module of claim 1 , wherein the heater comprises a bake plate and/or a susceptor cap coupled to the bake plate claim 1 , and wherein at least one resistive heating element is embedded within the bake plate and configured to generate heat to thermally treat the substrate.3. The bake module of claim 2 , wherein the bake plate is formed from a ceramic material having a high thermal conductivity and a low coefficient of thermal expansion.4. The bake module of claim 2 , wherein the bake plate is formed from silicon nitride (SiN) claim 2 , SiAlON claim 2 , aluminum nitride (AlN) claim 2 , aluminum oxide (AlO) claim 2 , or boron nitride (BN).5. The bake module of claim 2 , wherein the at least one resistive heating element and the plurality of RTDs are formed from a metal material having a high melting point and a thermal coefficient of expansion that is greater than or equal to that of a ceramic material used to form the bake plate.6. The bake module of claim 2 , wherein the plurality of RTDs are formed from a metal material having a melting point greater than a sintering temperature of the heater.7. The bake module of claim 2 , wherein the at least one resistive heating element and the plurality of RTDs are formed from one or more of tungsten claim 2 , molybdenum claim 2 , a tungsten-molybdenum alloy claim 2 , a nickel alloy claim 2 , ...

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Номер записи: 10
12-08-2021 дата публикации

MULTI-POINT THERMOCOUPLES AND ASSEMBLIES FOR CERAMIC HEATING STRUCTURES

Номер: US20210247240A1
Автор: Melvin Verbaas, Kentaro Asakura, Takashi Mochizuki, Takahisa Mase, Nobutaka Yoshioka, Saki Matsuo
Принадлежит:

Multi-point thermocouples and assemblies are disclosed for ceramic heating structures. The disclosed embodiments provide multi-point connections in distinct areas to provide good temperature-sensing contacts between metal thermocouples and ceramic bodies while also providing improved flexibility. As such, cracking of ceramic bodies for heating structures is avoided. For one embodiment, assemblies including a multi-point thermocouple and a ceramic body are used in bake plates for processing systems that process microelectronic workpieces. The metal thermocouple has a flat surface used for connections to the ceramic body. Preferably, the thermocouple is relatively thin and provides improved connection sites and flexibility. 1. An assembly , comprisinga ceramic body comprising a channel; anda thermocouple comprising metal and having a flat surface;wherein the flat surface of the thermocouple has connections to the ceramic body at multiple points along the channel for the ceramic body.2. The assembly of claim 1 , wherein a width of the flat surface is between twenty (20) percent and ninety-five (95) percent of a width of the channel.3. The assembly of claim 1 , wherein a width of the flat surface is at least one-and-a-half times or greater than a height of the thermocouple or an overall width of the channel is between two (2) percent and fifteen (20) percent of an overall width of the thermocouple.4. The assembly of claim 1 , wherein the flat surface comprises a continuous flat surface or a flat surface separated by one or more gaps.5. The assembly of claim 1 , wherein the connections between the thermocouple and the ceramic body comprise brazed connections.6. The assembly of claim 1 , wherein the thermocouple is a rectangular-shaped thermocouple or an oval-shaped thermocouple.7. The assembly of claim 1 , wherein the thermocouple comprises stainless steel claim 1 , and wherein the ceramic body comprises aluminum nitride.8. The assembly of claim 1 , wherein the channel ...

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Номер записи: 11
27-05-2021 дата публикации

INTERNALLY COOLED MULTI-HOLE INJECTORS FOR DELIVERY OF PROCESS CHEMICALS

Номер: US20210156029A1
Автор: Melvin Verbaas, Anthony Dip, VERBAAS MELVIN, DIP ANTHONY, Verbaas, Melvin, Dip, Anthony
Принадлежит:

Embodiments are described for internally cooled multi-hole injectors to deliver process chemicals. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius. 1. An injector to deliver process chemicals , comprising:a channel for process chemicals;a plurality of outlets associated with the channel to deliver the process chemicals to a process chamber;a delivery path for cooling chemicals; anda return path for the cooling chemicals;wherein the delivery path and the return path are positioned with respect to the channel to cool the process chemicals internally within the injector.2. The injector of claim 1 , wherein the process chemicals comprise one or more gasses claim 1 , and wherein the cooling chemicals comprise one or more inert gasses.3. The injector of claim 1 , wherein the channel is formed within an inner tube surrounded by an outer tube claim 1 , and wherein the delivery path and the return path are formed within the outer tube.4. The injector of claim 1 , wherein the channel claim 1 , the delivery path claim 1 , and the return path are formed within an injector body.5. The injector of claim 4 , wherein the delivery path comprises one or more ...

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Номер записи: 12
03-01-2019 дата публикации

METHODS FOR DEPOSITING A TRANSITION METAL NITRIDE FILM ON A SUBSTRATE BY ATOMIC LAYER DEPOSITION AND RELATED DEPOSITION APPARATUS

Номер: US20190003052A1
Автор: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li, SHERO ERIC JAMES, MILLIGAN ROBERT BRENNAN, PETRO WILLIAM GEORGE, WANG ERIC, ALOKOZAI FRED, LI DONG, WANG HAO, VERBAAS MELVIN, LI LUPING, Shero, Eric James, Milligan, Robert Brennan, Petro, William George, Wang, Eric, Alokozai, Fred, Li, Dong, Wang, Hao, Verbaas, Melvin, Li, Luping
Принадлежит:

An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C. 1. A method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and a showerhead , the method comprising:providing at least one substrate on a substrate support within the reaction space;controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant;controlling a temperature of a showerhead; andalternatively and sequentially feeding at least two vapor ...

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Номер записи: 13
28-10-2021 дата публикации

VERTICAL BATCH FURNACE ASSEMBLY COMPRISING A COOLING GAS SUPPLY

Номер: US20210333049A1
Автор: Melvin Verbaas, Christianus G.M. de Ridder
Принадлежит: ASM IP Holding BV

A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

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Номер записи: 14
27-08-2020 дата публикации

RADIATION SHIELD

Номер: US20200273729A1
Автор: Melvin Verbaas, VERBAAS MELVIN, Verbaas, Melvin
Принадлежит:

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly. 1. A method of using a radiation shield within a reaction chamber of a reactor , the method comprising the steps of:providing a susceptor heater assembly having an outer surface comprising a ledge;attaching a radiation shield to the ledge;using a tool to measure a distance between an outer perimeter of the radiation shield and an interior surface of a reaction chamber; andadjusting placement of the radiation shield based on the measurement.2. The method of claim 1 , wherein the radiation shield comprises a plate comprising a first section and a second section claim 1 , wherein the first section comprises an annular disc having an inner perimeter and an outer perimeter claim 1 , wherein the second section comprising a hollow frusto shape claim 1 , and wherein the attaching the radiation shield to the ledge does not comprise the inner perimeter contacting the susceptor heater assembly.3. The method of claim 2 , wherein the radiation shield comprises an attachment device by which the attaching the radiation shield to the ledge occurs.4. The method of claim 3 , wherein the attachment device comprises a slidable member comprising a recess claim 3 , wherein the attaching the radiation shield to the ledge comprises disposing a fastener through the recess.5. The method of claim 4 , wherein the fastener comprises a threaded fastener claim 4 , wherein the recess comprises threading complementary to threading of the threaded fastener claim 4 , such that the disposing the fastener through the recess comprises screwing fastener in the recess.6. The method of claim 3 , wherein the attachment device comprises a slidable member claim 3 , wherein the attaching the ...

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Номер записи: 15
18-01-2022 дата публикации

Internally cooled multi-hole injectors for delivery of process chemicals

Номер: US0011225716B2
Автор: Melvin Verbaas, Anthony Dip
Принадлежит: TOKYO ELECTRON LIMITED

Internally cooled multi-hole injectors to deliver process chemicals are provided. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.

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Номер записи: 16
07-02-2019 дата публикации

SHOWERHEAD ASSEMBLY FOR DISTRIBUTING A GAS WITHIN A REACTION CHAMBER AND A METHOD FOR CONTROLLING THE TEMPERATURE UNIFORMITY OF A SHOWERHEAD ASSEMBLY

Номер: US20190040529A1
Автор: Melvin Verbaas, Jereld Lee Winkler, John Kevin Shugrue, Carl Louis White, VERBAAS MELVIN, WINKLER JERELD LEE, SHUGRUE JOHN KEVIN, WHITE CARL LOUIS, Verbaas, Melvin, Winkler, Jereld Lee, Shugrue, John Kevin, White, Carl Louis
Принадлежит:

A showerhead assembly for distributing a gas within a reaction chamber is disclosed. The showerhead assembly may comprise: a chamber formed within the showerhead assembly and a gas distribution assembly adjacent to the chamber, wherein the gas distribution assembly comprises: a first gas distribution plate comprising a top surface and a bottom surface; and a second gas distribution plate comprising a top surface and a bottom surface, the second gas distribution plate being disposed over the top surface of the first gas distribution plate. The gas distribution assembly may further comprise: one or more heating structures disposed between the first gas distribution plate and the second gas distribution plate; and a plurality of apertures extending from the bottom surface of the first distribution plate to the top surface of the second gas distribution plate. Methods for controlling the temperature uniformity of a showerhead assembly utilized for distribution gas with a reaction chamber are also disclosed. 1. A showerhead assembly for distributing a gas within a reaction chamber , the showerhead assembly comprising:a chamber formed within the showerhead assembly; and a first gas distribution plate comprising a first top surface and a first bottom surface;', 'a second gas distribution plate comprising a second top surface and a second bottom surface, the second gas distribution plate disposed over the first top surface;', 'one or more heating structures disposed between the first gas distribution plate and the second gas distribution plate; and', 'a plurality of apertures extending from the first bottom surface to the second top surface., 'a gas distribution assembly adjacent to the chamber, wherein the gas distribution assembly comprises2. The showerhead assembly for distributing a gas within a reaction chamber of claim 1 , wherein the one or more heating structures comprises one or more 3D printed heating structures.3. The showerhead assembly for distributing a gas ...

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Номер записи: 17
14-02-2019 дата публикации

RADIATION SHIELD

Номер: US20190051544A1
Автор: Melvin Verbaas, VERBAAS MELVIN, Verbaas, Melvin
Принадлежит:

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly. 1. A radiation shield for use in a reactor , the radiation shield comprising:a plate comprising a first section and a second section, wherein the first section comprises an annular disc having an inner perimeter and an outer perimeter, and wherein the second section comprising a hollow frusto shape; andan attachment device for attaching the plate to a susceptor heater assembly within a reaction chamber of the reactor.2. The radiation shield of claim 1 , wherein the inner perimeter comprise a diameter that ranges from about 80 mm to about 90 mm.3. The radiation shield of claim 1 , wherein the inner perimeter does not contact the susceptor heater assembly.4. The radiation shield of claim 1 , wherein the attachment device comprises a slidable member.5. The radiation shield of claim 4 , wherein the slidable member comprises a recess to receive a threaded fastener.6. The radiation shield of claim 4 , wherein the slidable member comprises a recess to receive an alignment pin.7. The radiation shield of claim 4 , wherein the slidable member comprises a first end coupled to the plate and a second end configured to couple to the susceptor heater assembly.8. The radiation shield of claim 1 , further comprising one or more threaded fasteners to attach the slidable member to the plate.9. The radiation shield of claim 8 , wherein the attachment device comprises rivets to receive at least one of the one or more threaded fasteners.10. The radiation shield of claim 8 , wherein the attachment device comprises a block to receive at least one of the one or more threaded fasteners.11. The radiation shield of claim 10 , wherein the block comprises an alignment pin.12. The ...

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Номер записи: 18
05-08-2021 дата публикации

SUBSTRATE PROCESSING SYSTEM AND METHOD TO REDUCE A NUMBER OF EXTERNAL CONNECTORS PROVIDED ON THE SYSTEM

Номер: US20210242039A1
Автор: Melvin Verbaas
Принадлежит:

Embodiments of substrate processing systems and methods are provided for reducing the number of external connectors provided on a substrate processing system for receiving liquids and gases from external liquid and gas sources. In one embodiment, a substrate processing system includes a plurality of processing units for processing a substrate; a plurality of external connectors for receiving liquids and/or gases from a plurality of sources stored outside of the substrate processing system; and a plurality of internal distribution lines for routing the liquids and/or gases from the external connectors to the processing units. The disclosed substrate processing system reduces the number of external connectors provided on the system by: (a) including only one external connector for each liquid and gas source, and (b) providing a plurality of internal distribution lines within the substrate processing system for routing liquids and gases from the external connectors to the processing units. 1. A substrate processing system , comprising:a plurality of external connectors provided on the substrate processing system for receiving one or more liquids and/or gases, which are supplied from a plurality of sources to the plurality of external connectors via a plurality of external supply lines, where the plurality of sources are stored outside of the substrate processing system, and wherein only one external connector is provided on the substrate processing system for each of the plurality of sources to reduce installation costs and time and reduce operating and maintenance costs;a plurality of processing units, each coupled to receive at least one of the one or more liquids and/or the gases for processing a substrate; anda plurality of internal distribution lines provided within the substrate processing system for routing the one or more liquids and/or the gases from the plurality of external connectors to the plurality of processing units.2. The substrate processing system of ...

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Номер записи: 19
23-02-2017 дата публикации

SUSCEPTOR AND SUBSTRATE PROCESSING APPARATUS

Номер: US20170051406A1
Автор: Mori Yukihiro, Verbaas Melvin
Принадлежит: ASM IP HOLDING B.V.

A susceptor includes a plate part, a first heater for heating a first portion of the plate part, a second heater for heating a second portion of the plate part, and a heat insulating portion for thermally insulating the first portion and the second portion from each other on an upper surface side of the plate part. 1. A susceptor comprising:a plate part;a first heater for heating a first portion of the plate part;a second heater for heating a second portion of the plate part; anda heat insulating portion for thermally insulating the first portion and the second portion from each other on an upper surface side of the plate part.2. The susceptor according to claim 1 , wherein the heat insulating portion is a grooved portion provided in the plate part on the upper surface side.3. The susceptor according to claim 1 , wherein the second portion surrounds the first portion as viewed in plan.4. The susceptor according to claim 3 , further comprising:a third portion formed as a portion of the plate part, the third portion surrounding the second portion as viewed in plan;a third heater for heating the third portion; andan outer heat insulating portion for thermally insulating the second portion and the third portion from each other on the upper surface side of the plate part.5. The susceptor according to claim 1 , wherein each of the first portion and the second portion is formed in sectoral form as viewed in plan.6. The susceptor according to claim 1 , wherein the first portion is a portion including an outer edge of the plate part claim 1 , and the second portion is a portion including an outer edge of the plate part.7. The susceptor according to claim 3 , further comprising:a plurality of third portions formed as part of the plate part, the third portions as a whole surrounding the second portion as viewed in plan;a plurality of third heaters provided in the plurality of third portions in a one-to-one relationship;an outer heat insulating portion for thermally insulating ...

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Номер записи: 20
25-03-2021 дата публикации

SUSCEPTOR HAVING COOLING DEVICE

Номер: US20210087680A1
Автор: Mori Yukihiro, Verbaas Melvin
Принадлежит: ASM IP HOLDING B.V.

A susceptor includes a plate part, a first heater for heating a first portion of the plate part, a second heater for heating a second portion of the plate part, and a heat insulating portion for thermally insulating the first portion and the second portion from each other on an upper surface side of the plate part. 1. A susceptor comprising:a plate part;a first heater configured to heat a first portion of the plate part;a second heater configured to heat a second portion of the plate part, the second portion being different from the first portion;a heat insulating portion configured to thermally insulate die first portion and the second portion from each other on an upper surface side of the plate part, the heat insulating portion including a grooved portion provided in the plate part on the upper surface side and being located between the first heater and the second heater; anda cooling device configured to cool the plate part right below the grooved portion.2. The susceptor according to claim 1 , wherein the cooling device is attached to the plate part right below the grooved portion.3. The susceptor according to claim 1 , wherein the cooling device is embedded in the plate part right below the groove.4. The susceptor according to claim 3 , wherein the second portion surrounds the first portion as viewed in plan claim 3 , and the cooling device extends along the grooved portion in a plan view.5. The susceptor according to claim 1 , wherein the cooling device is embedded in the plate part at positions on opposite sides of a portion of the plate part right below the groove.6. The susceptor according to claim 5 , wherein the second portion surrounds the first portion as viewed in plan claim 5 , and the cooling device extends along the grooved portion in a plan view.7. The susceptor according to claim 1 , wherein the cooling device is embedded in the plate part at positions on opposite sides of the grooved portion.8. The susceptor according to claim 1 , wherein the ...

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Номер записи: 21
16-08-2022 дата публикации

Radiation shield

Номер: US11417545B2
Автор: Melvin VERBAAS
Принадлежит: ASM IP Holding BV

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

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Номер записи: 22
09-03-2023 дата публикации

Vertical batch furnace assembly comprising a cooling gas supply

Номер: US20230076060A1
Автор: Christianus G.M. de Ridder, Melvin VERBAAS
Принадлежит: ASM IP Holding BV

A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

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Номер записи: 23
03-10-2023 дата публикации

Multi-point thermocouples and assemblies for ceramic heating structures

Номер: US11774298B2
Автор: Kentaro Asakura, Melvin VERBAAS, Nobutaka Yoshioka, Saki MATSUO, Takahisa Mase, Takashi Mochizuki
Принадлежит: Tokyo Electron Ltd

Multi-point thermocouples and assemblies are disclosed for ceramic heating structures. The disclosed embodiments provide multi-point connections in distinct areas to provide good temperature-sensing contacts between metal thermocouples and ceramic bodies while also providing improved flexibility. As such, cracking of ceramic bodies for heating structures is avoided. For one embodiment, assemblies including a multi-point thermocouple and a ceramic body are used in bake plates for processing systems that process microelectronic workpieces. The metal thermocouple has a flat surface used for connections to the ceramic body. Preferably, the thermocouple is relatively thin and provides improved connection sites and flexibility.

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Номер записи: 24
19-08-2021 дата публикации

Multi-point thermocouples and assemblies for ceramic heating structures

Номер: WO2021163187A1
Автор: Kentaro Asakura, Melvin VERBAAS, Nobutaka Yoshioka, Saki MATSUO, Takahisa Mase, Takashi Mochizuki
Принадлежит: TOKYO ELECTRON LIMITED, Tokyo Electron U.S. Holdings, Inc.

Multi-point thermocouples and assemblies are disclosed for ceramic heating structures. The disclosed embodiments provide multi-point connections in distinct areas to provide good temperature-sensing contacts between metal thermocouples and ceramic bodies while also providing improved flexibility. As such, cracking of ceramic bodies for heating structures is avoided. For one embodiment, assemblies including a multi-point thermocouple and a ceramic body are used in bake plates for processing systems that process microelectronic workpieces. The metal thermocouple has a flat surface used for connections to the ceramic body. Preferably, the thermocouple is relatively thin and provides improved connection sites and flexibility.

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Номер записи: 25
17-09-2024 дата публикации

Stage device and substrate processing apparatus

Номер: US12094753B2
Автор: Einosuke Tsuda, Kentaro Asakura, Melvin VERBAAS
Принадлежит: Tokyo Electron Ltd

A stage device includes: a stage having a pin hole provided therein and a placement surface on which a substrate is placed; and at least one lift pin configured to move up and down through the pin hole; and a lifter configured to raise and lower the at least one lift pin, wherein the stage includes a first heating part provided therein and configured to heat the stage, and the at least one lift pin includes a second heating part provided therein or therearound and configured to heat the at least one lift pin.

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Номер записи: 26
12-09-2024 дата публикации

Ceramic Pedestal Shaft with Heated/Cooled Gas Tube

Номер: US20240304491A1
Автор: Melvin VERBAAS
Принадлежит: Tokyo Electron Ltd

A semiconductor processing apparatus that includes: a wafer pedestal including a ceramic pedestal shaft coupled to an underside of a ceramic wafer chuck, the ceramic pedestal shaft having a central through opening; and ceramic gas delivery tubes embedded within the ceramic pedestal shaft, the ceramic gas delivery tubes being made of a first ceramic material and the ceramic pedestal shaft being made of a second ceramic material, the ceramic gas delivery tubes being coupled to gas channels in the ceramic wafer chuck.

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Номер записи: 27
24-10-2024 дата публикации

Electrostatic Chuck and Method of Operation for Plasma Processing

Номер: US20240355593A1
Автор: Einosuke Tsuda, Melvin VERBAAS
Принадлежит: Tokyo Electron Ltd

An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.

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Номер записи: 28
24-10-2024 дата публикации

Electrostatic chuck and method of operation for plasma processing

Номер: WO2024220139A1
Автор: Einosuke Tsuda, Melvin VERBAAS
Принадлежит: TOKYO ELECTRON LIMITED, Tokyo Electron U.S. Holdings, Inc.

An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.

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Номер записи: 29
29-10-2024 дата публикации

Vertical batch furnace assembly comprising a cooling gas supply

Номер: US12130084B2
Автор: Christianus G. M. De Ridder, Melvin VERBAAS
Принадлежит: ASM IP Holding BV

A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

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Номер записи: 30