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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 16. Отображено 16.
26-12-2023 дата публикации

Modified Ni—Ti—Ta dielectric material for multi-layer ceramic capacitor and low-temperature preparation method thereof

Номер: US0011854745B2
Автор: YuanYuan Yang, XiaoZhen Li, MengJiang Xing, YanLing Luo, HongYu Yang, QingYang Fan, Hao Li, YunSheng Zhao
Принадлежит: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China

A modified Ni—Ti—Ta dielectric material for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By using characteristics that radii of the Cu2+ ion and (Al1/2Nb1/2)4+ ion are close to those of Ni and Ti elements, respectively, Cu2+, Al3+ and Nb5+ ions are introduced into a Ni0.5Ti0.5TaO4 matrix for partial substitution, a negative temperature coefficient of dielectric constant of −220±30 ppm/° C. is provided while a sintering temperature is significantly reduced, and deterioration factors of loss caused by sintering aids is reduced, so that the dielectric material applied to radio frequency MLCC with low loss, low cost and good process stability is prepared.

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Номер записи: 1
21-05-2024 дата публикации

Ion-modified microwave dielectric ceramic and preparation method thereof, and microwave component

Номер: US0011987532B1
Автор: YuanYuan Yang, XiaoZhen Li, MengJiang Xing, YanLing Luo, HongYu Yang, QingYang Fan, Liang Chai, YiFang Zhang
Принадлежит: Huzhou Ceramic-Chip Electronic Technology Co., Ltd.

An ion-modified microwave dielectric ceramic is provided and a chemical formula thereof is Zn0.15Nb0.3[Ti1-x(W1/3Zr1/2)x]0.55O2. In the chemical formula, x is in a range of 0.01 to 0.03. The ion-modified microwave dielectric ceramic includes the following components in parts by weight: 12.58-12.67 parts of ZnO, 41.11-41.39 parts of TiO2, 43.93-45.14 parts of Nb2O5, 0.44-1.31 parts of WO3, and 0.35-1.05 parts of ZrO2. A preparation method of the ion-modified microwave dielectric ceramic can be applied to different industrial requirements, such as electronic components, communication equipment, and microwave components; and the obtained ion-modified microwave dielectric ceramic expands a practical value of a Zn0.15Nb0.3Ti0.55O2 series microwave dielectric ceramic in electronic ceramic manufacturing.

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Номер записи: 2
02-01-2024 дата публикации

Low-temperature sintered microwave dielectric ceramic material and preparation method thereof

Номер: US0011858855B1
Автор: MengJiang Xing, XiaoZhen Li, YuanYuan Yang, YanLing Luo, HongYu Yang, QingYang Fan, YunSheng Zhao, Hao Li
Принадлежит: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Yangtze Delta Region Institute (Huzhou) , University of Electronic Science and Technology of China

A low-temperature sintered microwave dielectric ceramic material and a preparation method thereof are provided. The ceramic material includes a base material and a low-melting-point glass material; a general chemical formula of the base material is (Zn 0.9 Cu 0.1 ) 0.15 Nb 0.3 (Ti 0.9 Zr 0.1 ) 0.55 O 2 ; a percent by weight of the low-melting-point glass material is in a range of 1 wt. % to 2 wt. %; chemical compositions of the low-melting-point glass material include A 2 CO 3 -M 2 O 3 —SiO 2 , A of which includes at least two of a lithium ion, a sodium ion, and a potassium ion, M of which includes at least one of a boron ion and a bismuth ion; and a sintering temperature of the ceramic material is in a range of 850° C. to 900° C. The microwave dielectric ceramic material has the advantages of low dielectric loss, simple and controllable process, etc., has good process stability, and can meet requirements for radio communication industry.

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Номер записи: 3
05-09-2023 дата публикации

Modified NiTa2O6-based microwave dielectric ceramic material co- sintered at low temperature and its preparation method

Номер: US0011746056B2
Автор: MengJiang Xing, XiaoZhen Li, HongYu Yang, MingShan Qu
Принадлежит: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou

The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa 2 O 6 -based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B 2 O 3 , and the radius of Cu 2+ ions is similar to that of Ni 2+ and Ta 5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B 2 O 3 —Ta 2 O 5 , and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa 2 O 6 is synthesized at a lower pre-sintering temperature, and NiTa 2 O 6 -based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.

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Номер записи: 4
02-11-2023 дата публикации

MG-TA BASED DIELECTRIC CERAMIC FOR MULTI-LAYER CERAMIC CAPACITOR AND LOW-TEMPERATURE PREPARATION METHOD THEREOF

Номер: US20230348332A1
Автор: YuanYuan Yang, XiaoZhen Li, MengJiang Xing, YanLing Luo, HongYu Yang, QingYang Fan
Принадлежит: Yangtze River Delta Research Institute of UESTC Huzhou

A Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By providing a glass additive with high matching with a Mg—Ta ceramic, a modifier A+12CO3—B2+O—C3+2O3—SiO2 (A=Li, K; B=MnO, CuO, BaO; C=B, Al) is intruded in to a main material MgO—Ta2O5, which can significantly reduce the sintering temperature and provide a negative temperature coefficient of dielectric constant of −100±30 ppm/° C., and reduce the deterioration factors of loss caused by an additive for sintering, and prepare a dielectric material applied to RF MLCC with low loss, low cost and good process stability.

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Номер записи: 5
13-02-2024 дата публикации

Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor and low-temperature preparation method thereof

Номер: US0011897815B2
Автор: YuanYuan Yang, XiaoZhen Li, MengJiang Xing, YanLing Luo, HongYu Yang, QingYang Fan
Принадлежит: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China

A Mg—Ta based dielectric ceramic for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By providing a glass additive with high matching with a Mg—Ta ceramic, a modifier A+12CO3—B2+O—C3+2O3—SiO2 (A=Li, K; B=MnO, CuO, BaO; C=B, Al) is intruded in to a main material MgO—Ta2O5, which can significantly reduce the sintering temperature and provide a negative temperature coefficient of dielectric constant of −100±30 ppm/° C., and reduce the deterioration factors of loss caused by an additive for sintering, and prepare a dielectric material applied to RF MLCC with low loss, low cost and good process stability.

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Номер записи: 6
04-05-2023 дата публикации

Modified NiTa2O6-based Microwave Dielectric Ceramic Material Co-sintered at Low Temperature and Its Preparation Method

Номер: US20230132916A1
Автор: MengJiang Xing, XiaoZhen Li, HongYu Yang, MingShan Qu
Принадлежит: Yangtze River Delta Research Institute of UESTC Huzhou

The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa2O6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B2O3, and the radius of Cu2+ ions is similar to that of Ni2+ and Ta5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B2O3—Ta2O5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa2O6 is synthesized at a lower pre-sintering temperature, and NiTa2O6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.

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Номер записи: 7
02-05-2024 дата публикации

ION-MODIFIED MICROWAVE DIELECTRIC CERAMIC AND PREPARATION METHOD THEREOF, AND MICROWAVE COMPONENT

Номер: US20240140874A1
Автор: YuanYuan Yang, XiaoZhen Li, MengJiang Xing, YanLing Luo, HongYu Yang, QingYang Fan, Liang Chai, YiFang Zhang
Принадлежит: Huzhou Ceramic Chip Electronic Technology Co Ltd

An ion-modified microwave dielectric ceramic is provided and a chemical formula thereof is Zn0.15Nb0.3[Ti1-x(W1/3Zr1/2)x]0.55O2. In the chemical formula, x is in a range of 0.01 to 0.03. The ion-modified microwave dielectric ceramic includes the following components in parts by weight: 12.58-12.67 parts of ZnO, 41.11-41.39 parts of TiO2, 43.93-45.14 parts of Nb2O5, 0.44-1.31 parts of WO3, and 0.35-1.05 parts of ZrO2. A preparation method of the ion-modified microwave dielectric ceramic can be applied to different industrial requirements, such as electronic components, communication equipment, and microwave components; and the obtained ion-modified microwave dielectric ceramic expands a practical value of a Zn0.15Nb0.3Ti0.55O2 series microwave dielectric ceramic in electronic ceramic manufacturing.

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Номер записи: 8
11-05-2023 дата публикации

Modified NiO-Ta2O5-based Microwave Dielectric Ceramic Material Sintered at Low Temperature and Its Preparation Method

Номер: US20230145935A1
Автор: MengJiang Xing, XiaoZhen Li, HongYu Yang, MingShan Qu
Принадлежит: Yangtze River Delta Research Institute of UESTC Huzhou

The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiO-Ta2O5-based microwave dielectric ceramic material sintered at low temperature and its preparation method. It is guided by ion doping modification, not only considering the substitution of ions with similar radius, such as Zn2+ replacing Ni2+ ions, V5+ replacing Ta5+ ions; Meanwhile, the selected doped oxide still has the property of low melting point. Therefore, the microwave dielectric properties of NiO-Ta2O5-based ceramic material can be improved and the appropriate sintering temperature can be reduced. In the invention, by adjusting the molar content of each raw material, the NiO-Ta2O5-based ceramic material with low-temperature sintering, stable temperature and excellent microwave dielectric property is directly synthesized at one time, which can be widely applied to the technical field of LTCC.

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Номер записи: 9
16-01-2024 дата публикации

Modified NiO-Ta2O5-based microwave dielectric ceramic material sintered at low temperature and its preparation method

Номер: US0011873248B2
Автор: MengJiang Xing, XiaoZhen Li, HongYu Yang, MingShan Qu
Принадлежит: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou

The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiO—Ta2O5-based microwave dielectric ceramic material sintered at low temperature and its preparation method. It is guided by ion doping modification, not only considering the substitution of ions with similar radius, such as Zn2+ replacing Ni2+ ions, V5+ replacing Ta5+ ions; Meanwhile, the selected doped oxide still has the property of low melting point. Therefore, the microwave dielectric properties of NiO—Ta2O5-based ceramic material can be improved and the appropriate sintering temperature can be reduced. In the invention, by adjusting the molar content of each raw material, the NiO—Ta2O5-based ceramic material with low-temperature sintering, stable temperature and excellent microwave dielectric property is directly synthesized at one time, which can be widely applied to the technical field of LTCC.

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Номер записи: 10
02-11-2023 дата публикации

MODIFIED NI-TI-TA DIELECTRIC MATERIAL FOR MULTI-LAYER CERAMIC CAPACITOR AND LOW-TEMPERATURE PREPARATION METHOD THEREOF

Номер: US20230352239A1
Автор: YuanYuan Yang, XiaoZhen Li, MengJiang Xing, YanLing Luo, HongYu Yang, QingYang Fan, Hao Li, YunSheng Zhao
Принадлежит: Yangtze River Delta Research Institute of UESTC Huzhou

A modified Ni—Ti—Ta dielectric material for multi-layer ceramic capacitor (MLCC) and a low-temperature preparation method thereof are provided. By using characteristics that radii of the Cu2+ ion and (Al½Nb½)4+ ion are close to those of Ni and Ti elements, respectively, Cu2+, Al3+ and Nb5+ ions are introduced into a Ni0.5Ti0.5TaO4 matrix for partial substitution, a negative temperature coefficient of dielectric constant of -220±30 ppm/°C is provided while a sintering temperature is significantly reduced, and deterioration factors of loss caused by sintering aids is reduced, so that the dielectric material applied to radio frequency MLCC with low loss, low cost and good process stability is prepared.

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Номер записи: 11
15-08-2023 дата публикации

Microwave dielectric ceramic material and preparation method thereof

Номер: US0011724966B2
Автор: MengJiang Xing, MingShan Qu, HongYu Yang
Принадлежит: UNIVERSITY OF ELECTRONIC SCI. AND TECH. OF CHINA, University of Electronic Science and Technology of China

A temperature-stable modified NiO—Ta2O5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni2+ ions are replaced by Cu2+ ions, and (Ni1/3Ta2/3)4+ composite ions are replaced by [(Al1/2Nb1/2)ySn1-y]4+ composite ions, which considers that cations with similar ionic radii to Ni2+ and Ta5+ ions can be introduced into the NiTa2O6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa2O6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.

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Номер записи: 12
04-05-2023 дата публикации

MICROWAVE DIELECTRIC CERAMIC MATERIAL AND PREPARATION METHOD THEREOF

Номер: US20230135062A1
Автор: MengJiang Xing, MingShan Qu, HongYu Yang
Принадлежит:

A temperature-stable modified NiO—Ta2O5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni2+ ions are replaced by Cu2+ ions, and (Ni1/3Ta2/3)4+composite ions are replaced by [(Al1/2Nb1/2)ySn1-y]4+composite ions, which considers that cations with similar ionic radii to Ni2+ and Ta5+ions can be introduced into the NiTa2O6ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa2O6solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties ...

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Номер записи: 13
27-07-2017 дата публикации

LCP DERIVATIVE/SOFT MAGNETIC FERRITE COMPOSITE MATERIAL AND PREPARATION METHOD THEREFOR

Номер: US20170210878A1
Автор: XING Mengjiang, ZHENG Mingang
Принадлежит:

The present invention provides an LCP derivative/soft magnetic ferrite composite material, which is prepared by complexing and assembling an LCP derivative as a host and soft magnetic ferrite particles as a guest. The present invention also provides a method for preparing the composite material. The composite material of the present invention has high stability and is not easily dissociated, and has high customized magnestic permeability, dielectricity, thermal stability, environmental resistance, and chemical resistance; and the preparation process of the composite material meets the energy-saving and emission reduction requirements. Therefore, the composite material has a wide industrial application prospect. The composite material of the present invention can be widely applied to the wireless communication field, the aviation, spaceflight and military fields, the microwave and radio frequency component application field, the automotive electronic component field, and the like. 2. The composite material according to claim 1 , wherein the weight-average molecular weight of the LCP derivative is 20000˜35000.3. The composite material according to claim claim 1 , wherein the molar ratio of the structural unit c to the soft magnetic ferrite particles is 5˜6:1.4. The composite material according to claim 3 , wherein the soft magnetic ferrite particles are manganese/zinc (MnZn) ferrite or nickel/zinc (NiZn) ferrite.5. A preparation method of the LCP derivative/soft magnetic ferrite composite material according to claim 1 , comprising the steps of:A. reacting 2,5-dimethyl-p-acetoxybenzoic acid, 2,5-dimethyl-p-aminobenzoic acid and 1,5-dimethyl-6-acetyloxy-2-naphthoic acid in presence of an acidic catalyst to prepare a LCP derivative oligomer;B. polarizing the LCP derivative oligomer obtained in the step A to form a helical oligomer;C. mixing the helical oligomer obtained in the step B with soft magnetic ferrite particles and subjecting to host-guest complex assembly; andD ...

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Номер записи: 14
30-08-2023 дата публикации

Nitrogen-doped carbon material and preparation method thereof

Номер: GB2616103A
Автор: Dai Chuanxiang, Fan Qingyang, LIU Yonghong, Xing Mengdao, XING Mengjiang, Yang Chengtao
Принадлежит: Yangtze River Delta Research Institute of UESTC Huzhou

A nitrogen doped carbon material has a space group of Fd-3c and lattice parameters a = b = c = 1.10592 nm ± 0.5%. A preparation method of the material may comprise adding cyanuric acid and NH2NH2, hydrazine, into distilled water, alcohol or benzene and mixing evenly in an inert atmosphere. The mixture may then be sealed into a reactor which is treated in an oven at a temperature of 700-800 K for 8-12 hours followed by natural cooling to room temperature and letting to stand for 2-5 hours to obtain a powder. The powder may then be washed successively and repeatedly with alcohol, dilute hydrochloric acid and distilled water, followed by filtering. The washing and filtering process may be repeated at least three times before drying at 350-450 K for 3-4 hours. The material may be used in energy storage materials, catalysts for organic reactions, photocatalysts, or sensors.

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Номер записи: 15
09-08-2023 дата публикации

LTCC (low temperature co-fired ceramic) miniaturized duplexer

Номер: GB2615395A
Автор: Dai Chuanxiang, LIU Yonghong, Xing Mengdao, XING Mengjiang, Yang Chengtao, Yang Xiaodong
Принадлежит: Yangtze River Delta Research Institute of UESTC Huzhou

An LTCC miniaturized duplexer comprises an LTCC base body layer 1. A duplexer circuit structure is formed on the LTCC base body layer. The duplexer circuit structure is composed of a low-pass filter circuit 2 and a high-pass filter circuit 3. The low-pass filter circuit comprises inductors L1, L2 connected in series between a common input port P1 and a low-frequency output port P2. A capacitor C1 connected with a grounding port is connected between every two adjacent inductors L1, L2. The high-pass filter circuit 3 comprises capacitors C2, C3, C4 connected in series between the common input end P1 and a high-frequency output port P3. An inductor L3, L4 connected with the grounding port is connected between every two adjacent capacitors C2, C3, C4. The effects of suppressing a parasitic passband on the low-pass duplexer and optimizing out-of-band rejection of the high-pass duplexer are achieved by using the parasitic parameters of all components through reasonable three-dimensional layout.

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Номер записи: 16