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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 12. Отображено 12.
15-10-2009 дата публикации

FINFET DEVICES FROM BULK SEMICONDUCTOR AND METHODS FOR MANUFACTURING THE SAME

Номер: US20090256207A1

Disclosed herein is a transistor comprising a first fin having a first gate electrode disposed across the first fin; the gate electrode contacting opposing surfaces of the fin; and a planar oxide layer having a second gate electrode disposed across the planar oxide layer to form a planar metal oxide semiconductor field effect transistor; the first fin and the planar oxide layer being disposed upon a surface of a wafer.

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08-01-2008 дата публикации

Redundant interconnect high current bipolar device and method of forming the device

Номер: US0007317240B2

A device. The device includes two bipolar transistors electrically connected to each other. Each bipolar transistor of the two bipolar transistors may include a base contact and an emitter contact surrounding the base contact, wherein the emitters contacts of the two bipolar transistor are in electrical contact with each other. A first bipolar transistor of the two bipolar transistors may have a first wiring stack and a second bipolar transistor two bipolar transistors may have a second wiring stack, wherein the second wiring stack includes at least one more wiring level than the first wiring stack.

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21-10-2010 дата публикации

Automated Generation of Oxide Pillar Slot Shapes in Silicon-On-Insulator Formation Technology

Номер: US20100269085A1

A method of automated generation of oxide pillar (PX) slot shapes of a PX layer within silicon-on-insulator (SOI) structures that includes generating a placement grid on recess oxide (RX) shapes, creating PX placement markers on the placement grid along a perimeter of the RX shapes, filtering the PX placement markers, generating a PX slot shape corresponding to each filtered PX placement marker on the RX shapes, correcting location errors associated with the generated PX slot shapes, generating PX slot shapes on RX shapes of a predetermined size for which PX slot shapes were not generated, performing a verification operation of the PX slot shapes, and outputting the PX layer including the verified PX slot shapes.

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11-03-2010 дата публикации

Method for Compensating for Variations in Structures of an Integrated Circuit

Номер: US20100064273A1
Принадлежит:

A method of for compensating for variations in structures of an integrated circuit. The method includes (a) selecting a mask design shape and selecting a region of the mask design shape; (b) applying a model-based optical proximity correction to all of the mask design shape; and after (b), (c) applying a rules-based optical proximity correction to the selected region of the mask design shape.

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05-07-2012 дата публикации

METHOD FOR COMPENSATING FOR VARIATIONS IN STRUCTURES OF AN INTEGRATED CIRCUIT

Номер: US20120174046A1

A method of for compensating for variations in structures of an integrated circuit. The method includes (a) selecting a mask design shape and selecting a region of the mask design shape; (b) applying a model-based optical proximity correction to all of the mask design shape; and after (b), (c) applying a rules-based optical proximity correction to the selected region of the mask design shape.

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04-11-2014 дата публикации

Method for compensating for variations in structures of an integrated circuit

Номер: US0008881072B2

A method of for compensating for variations in structures of an integrated circuit. The method includes (a) selecting a mask design shape and selecting a region of the mask design shape; (b) applying a model-based optical proximity correction to all of the mask design shape; and after (b), (c) applying a rules-based optical proximity correction to the selected region of the mask design shape.

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14-02-2006 дата публикации

Redundant interconnect high current bipolar device and method of forming the device

Номер: US0006998699B2

A bipolar transistor having a base contact surrounded by an emitter contact. A plurality of wires extending from the base contact and the emitter contact of the bipolar transistor, wherein the wires of the base contact are stacked higher than the wires of the emitter contact. A device comprising a plurality of these bipolar transistors, wherein at least one side of each emitter contact abuts each adjacent transistor. Increasing the wiring stack of each row of transistors in the device as the distance between the row and the current input increases.

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13-06-2013 дата публикации

METHOD FOR COMPENSATING FOR VARIATIONS IN STRUCTURES OF AN INTEGRATED CIRCUIT

Номер: US20130152027A1

A method of for compensating for variations in structures of an integrated circuit. The method includes (a) selecting a mask design shape and selecting a region of the mask design shape; (b) applying a model-based optical proximity correction to all of the mask design shape; and after (b), (c) applying a rules-based optical proximity correction to the selected region of the mask design shape. 1. A method , comprising:selecting a mask design shape;selecting a region of said mask design shape;using a computer, applying a model-based optical proximity correction to all regions of said mask design shape, said model optical proximity correction based on a computer model of a photolithographic process that generates a simulated photoresist pattern based on said mask design shape;after said applying said model-based optical proximity correction, using a computer, applying a rule-based optical proximity correction to said selected region of said mask design shape, said rule-based optical proximity correction based on testing for a particular condition occurring in a mask design shape and applying a rule to said mask design shape to change the mask design shape.2. The method of claim 1 , where said mask design shape defines a circuit shape and said circuit shape crosses an interface between a first region and an abutting second region of an integrated circuit.3. The method of claim 2 , wherein said circuit shape crosses said interface perpendicularly.4. The method of claim 2 , wherein said first and second regions have different reflectivities.5. The method of claim 2 , wherein a top surface of said first region is raised above a top surface of said second region forming a step.6. The method of claim 2 , wherein applying said rule-based optical proximity correction includes placing a design collar on said mask design shape in said selected region claim 2 , said design collar increasing a width of said mask design shape proximate to said interface in a direction parallel to a ...

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08-05-2012 дата публикации

Method for compensating for variations in structures of an integrated circuit

Номер: US0008176446B2

A method of for compensating for variations in structures of an integrated circuit. The method includes (a) selecting a mask design shape and selecting a region of the mask design shape; (b) applying a model-based optical proximity correction to all of the mask design shape; and after (b), (c) applying a rules-based optical proximity correction to the selected region of the mask design shape.

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02-12-2003 дата публикации

Redundant interconnect high current bipolar device

Номер: US0006657280B1

A bipolar transistor having a base contact surrounded by an emitter contact. A plurality of wires extending from the base contact and the emitter contact of the bipolar transistor, wherein the wires of the base contact are stacked higher than the wires of the emitter contact. A device comprising a plurality of these bipolar transistors, wherein at least one side of each emitter contact abuts each adjacent transistor. Increasing the wiring stack of each row of transistors in the device as the distance between the row and the current input increases.

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04-06-2013 дата публикации

Method for compensating for variations in structures of an integrated circuit

Номер: US0008458628B2

A method of for compensating for variations in structures of an integrated circuit. The method includes (a) selecting a mask design shape and selecting a region of the mask design shape; (b) applying a model-based optical proximity correction to all of the mask design shape; and after (b), (c) applying a rules-based optical proximity correction to the selected region of the mask design shape.

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07-05-2013 дата публикации

Automated generation of oxide pillar slot shapes in silicon-on-insulator formation technology

Номер: US0008438509B2

A method of automated generation of oxide pillar (PX) slot shapes of a PX layer within silicon-on-insulator (SOI) structures that includes generating a placement grid on recess oxide (RX) shapes, creating PX placement markers on the placement grid along a perimeter of the RX shapes, filtering the PX placement markers, generating a PX slot shape corresponding to each filtered PX placement marker on the RX shapes, correcting location errors associated with the generated PX slot shapes, generating PX slot shapes on RX shapes of a predetermined size for which PX slot shapes were not generated, performing a verification operation of the PX slot shapes, and outputting the PX layer including the verified PX slot shapes.

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