Tantalum and niobium compounds and their use for chemical vapour deposition (CVD)

Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R¹ and R² C₁ to C₁₂ alkyl, C₅ to C₁₂ cycloalkyl, C₆ to C₁₀ aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals -SiR₃, or amino radicals NR₂ R³ is C₁ to C₈ alkyl, C₅ to C₁₀ cycloalkyl, C₆ to C₁₄ aryl radical, or SiR₃ or NR₂, R⁴ denotes Cl, Br, I, NIH-R⁵ where R⁵ is C₁ to C₈ alkyl, C₅ to C₁₀ cycloalkyl or C₆ to C₁₀ aryl radical, or O-R⁶ where R⁶=optionally substituted C₁ to C₁₁ alkyl, C₅ to C₁₀ cycloalkyl, C₆ to C₁₀ aryl ...

Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD)

The present invention relates to specific novel tungsten and molybdenum compounds to the use thereof for the deposition of tungsten- or molybdenum-containing layers by means of chemical vapour deposition, and to the tungsten- or molybdenum-containing layers produced by this process.

TANTALUM AND NIOBIUM COMPOUNDS AND THEIR USE FOR CHEMICAL VAPOUR DEPOSITION (CVD)

The present invention relates to special, novel tantalum and niobium compounds, the use thereof for the deposition of tantalum- or niobium-containing layers by means of chemical vapour deposition and the tantalum- or niobium-containing layers produced by this process.

Tungsten and molybdenum compounds and thier use for chemical vapour deposition (CVD)

The present invention relates to specific novel tungsten and molybdenum compounds to the use thereof for the deposition of tungsten- or molybdenum-containing layers by means of chemical vapour deposition, and to the tungsten- or molybdenum-containing layers produced by this process.

Tantalum and niobium compounds and their use for chemical vapour deposition (CVD)

Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 mutually independently denote optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 where R═C1 to C4 alkyl, R3 denotes an optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes halogen from the group comprising Cl, Br, I, or NH—R5 where R5═optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or —NR—NR′R″ (hydrazido(−1), wherein ...

Tungsten and Molybdenum Compounds and Their Use for Chemical Vapor Deposition (CVD)

Tantalum and niobium compounds and their use for chemical vapour deposition (CVD)

Tantalum and niobium compounds and their application in Chemical Vapour Deposition (CVD)

Tantal- und niob- verbindungen und ihre verwendung für die chemical vapour deposition (cvd)

Wolfram- und molybdän-verbindungen und ihre verwendung für die chemical vapour deposition (cvd)

Tantal- und niob-verbindungen und ihre verwendung für die chemical vapour deposition (cvd)

Tantal- und Niob-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)

Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD)