31-05-2018 дата публикации
Номер: US20180148645A1
Принадлежит:
An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (HPO), nitric acid (HNO), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO), silicic acid (HSiO), boric acid (HBO), acetic acid (CHCOOH), propionic acid (CHCOOH), lactic acid (CHCH(OH)COOH), and glycolic acid (HOCHCOOH). 1. An etching composition having an etching selectivity for titanium nitride (TiN) , the etching composition comprising:5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of an acid compound, and 0.001 wt % to 5 wt % of a corrosion inhibitor, with respect to a total weight of the etching composition,{'sub': 3', '4', '3', '4', '2', '3', '3', '3', '3', '2', '5', '3', '2, 'wherein the acid compound includes at least one of phosphoric acid (HPO), nitric acid (HNO), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HClO), silicic acid (HSiO), boric acid (HBO), acetic acid (CHCOOH), propionic acid (CHCOOH), lactic acid (CHCH(OH)COOH), and glycolic acid (HOCHCOOH).'}2. The etching composition of claim 1 , wherein the acid compound comprises phosphoric acid.3. The etching composition of claim 1 , wherein the corrosion inhibitor comprises at least one of ammonium peroxysulfate claim 1 , ammonium sulfate claim 1 , monoammonium phosphate claim 1 , diammonium phosphate claim 1 , triammonium phosphate claim 1 , ammonium chloride claim 1 , ammonium acetate claim 1 , ammonium carbonate claim 1 , ammonium nitrate claim 1 , ammonium iodide claim 1 , 1 claim 1 ,2 claim 1 ,4- ...
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