Cleaning head for sweeping and wringing apparatus

A cleaning head for a sweeping and wringing apparatus is mounted on a lower end of a connecting rod thereof and comprises a cleaning element, having a sweeping part and a held part, a base plate, holding the held part of said cleaning element and having two fixing elements, which each have a fixing hole and a guiding surface.

Method for evaluating failure-in-time

A FIT evaluation method for an IC is provided. The FIT evaluation method includes accessing data representing a layout of the IC comprising a number of metal lines and a number of VIAs; picking a number of nodes along the metal lines; dividing each of the metal lines into a number of metal segments based on the nodes; and determining a FIT value for each of the metal segments or VIAs to verify the layout and fabricate the IC.

HEAT DISSIPATION MODULE WITH WIND STOP FUNCTION

A heat dissipation module includes a centrifugal fan and a heat dissipation fin array. The centrifugal fan includes at least one axial air inlet and a radial air outlet, wherein the radial air outlet is defined between a first sidewall and an opposite second sidewall with a tongue potion. The heat dissipation fin array is located at the radial air outlet of the centrifugal fan. The heat dissipation fin array and the radial air outlet substantially share an equal length L. The heat dissipation fin array has a middle wind stop section which is closer to the second sidewall than the first sidewall. The wind stop section has a length ranging from about 0.1 L to about 0.42 L. 1. A heat dissipation module comprising:a centrifugal fan comprising at least one axial air inlet and a radial air outlet, wherein the radial air outlet is defined between a first sidewall and an opposite second sidewall with a tongue potion; anda heat dissipation fin array disposed at the radial air outlet of the centrifugal fan, wherein the heat dissipation fin array and the radial air outlet substantially share an equal length L, the heat dissipation fin array has a middle wind stop section which is closer to the second sidewall than the first sidewall, the wind stop section has a length ranging from about 0.1 L to about 0.42 L.2. The heat dissipation module of claim 1 , wherein the length of the wind stop section is about 0.26 L.3. The heat dissipation module of claim 2 , wherein the wind stop section begins 0.48 L from the first sidewall and ends 0.74 L from the first sidewall.4. The heat dissipation module of further comprising a heat pipe which has a first end connected with the heat dissipation fin array and a second opposite end connected with a heat source.5. The heat dissipation module of claim 1 , wherein the wind stop section is a wind-stop sponge contained within the heat dissipation fin array.6. The heat dissipation module of claim 1 , wherein the wind stop section is a wind-stop tape ...

Baby High Chair

A high chair includes a front support frame ( 31 ), a rear support frame ( 32 ) pivotally connected with the front support frame, an upper support frame ( 12 ) having a first end pivotally connected with the front support frame, and at least one locking device ( 2 ) mounted on a second end of the upper support frame and detachably locked onto the rear support frame to releasably lock the upper support frame on the rear support frame. Thus, the high chair can be folded completely when not in use so as to largely decrease the space of storage and transportation. In addition, the high chair is folded or expanded easily and quickly, thereby facilitating the user folding or expanding the high chair.

Castor Assembly

A castor assembly includes a support unit, a frame unit, a brake unit, and an operation unit. The frame unit includes a frame, a locating flange, and a wheel. The support unit includes a bearing, and an inner bushing. The brake unit includes a control shaft, a braking block, a lower toothed disk, an upper toothed disk, a locking block, and an elastic member. The operation unit includes a housing, a drive seat, a pressing roll, a cam block, and a restoring member. Thus, when the braking block presses the wheel to stop movement of the wheel, the upper toothed disk meshes with the lower toothed disk to lock the lower toothed disk and the braking block so that the wheel is locked and cannot be turned freely when the wheel is braked. 1. A castor assembly , comprising:a support unit;a frame unit pivotally connected with the support unit;a brake unit pivotally connected with the support unit and detachably locked onto the frame unit to releasably brake the frame unit; andan operation unit mounted on the support unit and connected with the brake unit to drive the brake unit relative to the frame unit;wherein the frame unit includes:a frame having an upper end provided with a mounting hole;a locating flange mounted in the mounting hole of the frame and having a bottom provided with a locating groove; anda wheel rotatably mounted on a lower end of the frame;the support unit includes:a bearing mounted in the mounting hole of the frame; andan inner bushing having a lower end mounted in the bearing;the brake unit includes:a control shaft movably mounted in the inner bushing of the support unit;a braking block mounted on a lower end of the control shaft to move in concert with the control shaft and movable to press the wheel of the frame unit;a lower toothed disk mounted on the braking block;an upper toothed disk locked onto the lower end of the control shaft and movable to mesh with the lower toothed disk;a locking block formed on the upper toothed disk and detachably locked in ...

Plating system and method of plating wafer

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

Threshold Voltage Tuning for Fin-Based Integrated Circuit Device

Methods for tuning threshold voltages of fin-like field effect transistor (FinFET) devices are disclosed herein. An exemplary integrated circuit device includes a high voltage n-type FinFET, a high voltage p-type FinFET, a low voltage n-type FinFET, and a low voltage p-type FinFET. Threshold voltages of the high voltage n-type FinFET and the high voltage p-type FinFET are greater than threshold voltages of the low voltage n-type FinFET and the low voltage p-type FinFET, respectively. The high voltage n-type FinFET, the high voltage p-type FinFET, the low voltage n-type FinFET, and the low voltage p-type FinFET each include a threshold voltage tuning layer that includes tantalum and nitrogen. Thicknesses of the threshold voltage tuning layer of the low voltage n-type FinFET and the low voltage p-type FinFET are less than thicknesses of the threshold voltage tuning layer of the high voltage n-type FinFET and the high voltage p-type FinFET, respectively.

Sweeping and wringing apparatus

A sweeping and wringing apparatus comprises a cleaning head, a squeezing head, a main rod, a wringing rod, two connecting rods, two transverse bars, and two squeezers. The two transverse bars are symmetrically fastened to front and rear parts of the squeezing head at a fixed mutual distance. A plurality of squeezing sections is put excentrically over the transverse bars, forming two lines. When the cleaning head is pulled up to be wrung, passing through between the two lines of squeezers, the squeezers turn, with a gap in between gradually becoming narrower as the cleaning head moves upward, resulting in effective wringing of the cleaning head.

Electronic device, interactive information display method and computer readable recording medium

An electronic device configured to display interactive information is provided, including a communication device, a camera, an input device, a processor and a display. The camera acquires an input image including an image of a display device, and the display device displays an interactive image including a default interaction option. The processor generates a virtual option according to the interactive image and superimposes the virtual option on the input image. The default interaction option and the virtual option correspond to a designated device and a designated service, respectively. The display is configured to display the input image and the virtual option. The processor determines whether the default interaction option or the virtual option is enabled when the input device receives an input operation, so as to provide the designated service in the designated device corresponding to the enabled default interaction option or virtual option.

Sand vehicle

Semiconductor structure and manufacturing method thereof

A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

Semiconductor fabrication tool having gas manifold assembled by jig

A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

Electropolishing treatment method for stainless steel workpiece

Provides an electropolishing treatment method for a stainless steel workpiece, wherein the method comprises the following steps: placing the stainless steel workpiece in an oxalic acid solution and performing supersonic oscillation; performing a first electropolishing treatment to the stainless steel workpiece, wherein the first electropolishing treatment uses the stainless steel workpiece as an anode and 10% to 15% perchloric acid as an electrolyte, and when a constant voltage is set as 12V, the first electropolishing treatment procedure is performed; and performing a second electropolishing treatment to the stainless steel workpiece, wherein the second electropolishing treatment uses the stainless steel workpiece after the first electropolishing treatment as an anode, and an electrolyte consists of ethanol, sulfuric acid and perchloric acid, and when a constant voltage is set as 12V, the second electropolishing treatment is performed to obtain the stainless steel workpiece after the second ...

Holding assembly for sweeping and wringing apparatus

A holding assembly for a sweeping and wringing apparatus comprises a fastening assembly, fastened to a lower end of a holding rod of the sweeping and wringing apparatus, having a chamber which is enclosed by a left wall and a right wall into which insertion holes are bored, an insertion assembly, inserted between the insertion holes and having two cross-shaped insertion heads separated by a spring, and a release assembly, shaped like the letter U and having two end sections with chamfered end faces which wedge-like respectively enter spaces between the left and right walls and the insertion heads when the release assembly is pressed on, with a spring exerting a counterforce, so that a cleaning head of the sweeping and wringing apparatus is easily replaced.

Active atomic reservoir for enhancing electromigration reliability in integrated circuits

An integrated circuit (IC) comprises a first conductor in one layer of the IC, a second conductor in another layer of the IC, and a first metal plug connecting the first and second conductors. The IC further comprises an atomic source conductor (ASC) in the one layer of the IC and joined to the first conductor, and a second metal plug connecting the ASC to a voltage source of the IC. The first conductor and the ASC are configured to be biased to different voltages so as to establish an electron path from the second metal plug to the first metal plug such that the ASC acts as an active atomic source for the first conductor.

DEVICE SIGNATURE GENERATION

Methods and systems for generating a signature for a device include pre-charging a plurality of conductors to a first voltage level. A voltage leakage for each of the conductors is determined, and a device signature is generating based on the determined leakage. 1. A method of generating a signature for a device , comprising:pre-charging a plurality of conductors to a first voltage level;determining a voltage leakage of each of the conductors; andgenerating a device signature based on the determined leakage.2. The method claim 1 , wherein pre-charging the plurality of conductors includes controlling a plurality of switching devices selectively connect the plurality of conductors to a power source.3. The method claim 1 , wherein determining the voltage leakage includes comparing a second voltage level of the plurality of conductors to a third voltage level.4. The method claim 3 , further comprising outputting the device signature in response to the second voltage level of a predetermined number of the conductors reaching the third voltage level.5. The method of claim 4 , wherein the predetermined number of the conductors is half of the plurality of conductors.6. The method claim 3 , wherein the second voltage level of the plurality of conductors is compared to the third voltage level after a first elapsed time period.7. The method claim 6 , wherein if the second voltage level of the predetermined number of the conductors has not reached the third voltage level after the first elapsed time period claim 6 , then the second voltage level of the plurality of conductors is compared to the third voltage level after a second elapsed time period.8. The method claim 1 , wherein each of the plurality of conductors represents one bit of the device signature.9. The method claim 3 , wherein the third voltage level is a logic LOW level.10. A system for generating a device signature claim 3 , comprising:plurality of conductors;a plurality of switching devices configured to ...

Threshold voltage tuning for fin-based integrated circuit device

Methods for tuning threshold voltages of fin-like field effect transistor devices are disclosed herein. An exemplary method includes forming a first opening in a first gate structure and a second opening in a second gate structure. The first gate structure is disposed over a first fin structure, and the second gate structure is disposed over a second fin structure. The method further includes filling the first opening and the second opening by forming a gate dielectric layer, forming a threshold voltage tuning layer over the gate dielectric layer, etching back the threshold voltage tuning layer in the second opening, forming a work function layer over the threshold voltage tuning layer, and forming a metal fill layer over the work function layer. The threshold voltage tuning layer includes tantalum and nitrogen. The etching back uses a tungsten-chloride containing precursor.

Cleaning element and cleaning apparatus

A cleaning element comprises a plurality of water-absorbing strips, each having a large water-absorbing surface made up of front, rear, left right surfaces for wiping a large floor area, a holding plate for holding the water-absorbing strips on inner ends thereof, and reinforcing seams, longitudinally running along the water-absorbing strips, for high mechanical strength and an enhanced lifetime. A cleaning apparatus, used in conjunction with the cleaning element, further comprises a rod and a bearing.

Combination castor whose castor units are braked simultaneously

A combination castor includes a control unit, a linking unit, and at least two castor units. The control unit includes at least one mounting seat, at least one bushing mounted in the at least one mounting seat, and a pedal pivotally located at a side of the at least one mounting seat. The linking unit includes a propeller shaft extended through the at least one bushing and locked onto the pedal, at least one rotation plate secured on the propeller shaft, and at least two links each pivotally connected with the at least one rotation plate and the respective castor unit. Thus, when the pedal is stepped, the propeller shaft is driven to rotate the at least one rotation plate which drives the links to operate the castor units so as to brake or position the castor units simultaneously.

Apparatus and method of manufacturing a semiconductor device

In order to reduce the occurrence of current alarms in a semiconductor etching or deposition process, a controller determines an offset in relative positions of a cover ring and a shield over a wafer within a vacuum chamber. The controller provides a position alarm and/or adjusts the position of the cover ring or shield when the offset is greater than a predetermined value or outside a range of acceptable values.

Conductive line-based temperature-sensing device

A temperature-sensing device configured to monitor a temperature includes: a first conductive line; a second conductive line, wherein the first and second conductive lines have respective different cross-sectional dimensions; a sensing circuit, coupled to the first and second conductive lines, and configured to determine a logic state of an output signal based on a difference between respective signal levels present on the first and second conductive lines; and a control circuit, coupled to the sensing circuit, and configured to determine whether the monitored temperature is above or below a pre-defined threshold temperature based on the determined logic state.

Removable cleaning head for sweeping apparatus

A cleaning head for a sweeping and wringing apparatus, connected with a connecting part thereof, comprises a cleaning element, made of water-absorbing material and having an elongated sweeping part and a held part attached to a top side thereof, and a base plate, which is an elongated metal plate with lateral walls having jagged edges for holding said held part of said cleaning element and which has a top part that is fastened to said connecting part, so that said cleaning head is easily installed and replaced.

Method for fabricating coiled nano carbon material, coiled nano carbon layered substrate and coiled nano carbon material thereof

A preparing method for coiled nano carbon material is provided and includes forming a noble metal catalyst crystallite nucleus layer on the surface of the substrate by displacement of a noble metal catalyst, forming a composited nano carbon material on the metal layer of the substrate by using TCVD; in which the composited nano carbon material includes coiled carbon nano tubes and coiled carbon nano fiber. The measured quantity of the total coiled nano carbon tubes and coiled nano carbon fiber in the total measured quantity of nano carbon material is greater than 30%. The coiled nano carbon material can be acquired by scraping it off from the substrate surface.

Method for evaluating failure-in-time

A FIT evaluation method for an IC is provided. The FIT evaluation method includes accessing data representing a layout of the IC comprising a number of metal lines and a number of VIAs; picking a number of nodes along the metal lines; dividing each of the metal lines into a number of metal segments based on the nodes; and determining a FIT value for each of the metal segments or VIAs to verify the layout and fabricate the IC.

ELECTRONIC DEVICE, INTERACTIVE INFORMATION DISPLAY METHOD AND COMPUTER READABLE RECORDING MEDIUM

An electronic device configured to display interactive information is provided, including a communication device, a camera, an input device, a processor and a display. The camera acquires an input image including an image of a display device, and the display device displays an interactive image including a default interaction option. The processor generates a virtual option according to the interactive image and superimposes the virtual option on the input image. The default interaction option and the virtual option correspond to a designated device and a designated service, respectively. The display is configured to display the input image and the virtual option. The processor determines whether the default interaction option or the virtual option is enabled when the input device receives an input operation, so as to provide the designated service in the designated device corresponding to the enabled default interaction option or virtual option. 1. An electronic device , configured to display interactive information , comprising:a communication device, configured to transmit and receive information;a camera, configured to acquire an input image, wherein the input image comprises an image of a display device, and the display device displays an interactive image comprising a default interaction option;an input device, configured to receive an input operation;a processor, connected with the communication device, the camera and the input device, and configured to acquire a virtual option corresponding to the interactive image and superimpose the virtual option on the input image, wherein the default interaction option and the virtual option correspond to a designated device and a designated service, respectively;a display, connected with the processor, and configured to display the input image and the virtual option,wherein in response to the input device receives the input operation, the processor determines whether the default interaction option or the virtual option ...

Security apparatus and method for a mobile electronic system

A security apparatus for a mobile electronic system, comprising a remote controller and a receiver. When the mobile electronic system is turned off and the control module is unable to establish a wireless connection to the receiver within a first time period, the remote controller activates an alarm module. When the mobile electronic system is turned on and the receiver is able to establish a wireless connection to the remote controller, the mobile electronic system enables access, wherein the remote controller comprises a control key, which is able to disable wireless function of the security apparatus.

Cover ring and ground shield for physical vapor deposition chamber

A processing chamber includes a ground shield and a cover ring. The ground shield includes an annular body, and at least one guide pin extending from the annular body. The cover ring is positioned on the ground shield, and includes an annular body including at least one recess. At least a part of the at least one guide pin is receivable in the at least one recess, an inner cylindrical ring extends from the annular body, and an outer cylindrical ring extends from the annular body and is radially separated from the inner cylindrical ring by a horizontally extending portion of the annular body.

Enhancing Integrated Circuit Density with Active Atomic Reservoir

Methods are disclosed herein for fabricating integrated circuit interconnects that can improve electromigration. An exemplary method includes forming a first metal layer of an integrated circuit and forming a second metal layer of the integrated circuit. The first metal layer includes a first conductor electrically coupled to a second conductor, and the second metal layer includes a third conductor electrically coupled to the first conductor. The first conductor, the second conductor, and the third conductor are configured, such that electrons flow from the second conductor to an area of the first conductor where electrons flow from the third conductor to the first conductor.

Castor that is braked and positioned simultaneously

A castor includes a suspension unit, a castor body, a wheel unit, and a brake unit. The suspension unit includes an upright fixing bolt and a locking member. The wheel unit includes two rollers. The brake unit includes a positioning block, a sliding block, a biasing member, a drive member, and a braking pin. Thus, when the drive member of the brake unit is pressed, each of the rollers of the wheel unit is braked by and locked onto the castor body, and the castor body is locked onto the fixing bolt simultaneously, thereby locking the castor exactly and stably.

Semiconductor structure

A semiconductor structure includes a conductive line, a pad layer, and a barrier layer. The conductive line is embedded in a multi-level interconnect structure. The pad layer is over the conductive line. The barrier layer is between the conductive line and the pad layer. The pad layer is electrically connected to the conductive line through the barrier layer, and the barrier layer includes a first poly-crystalline layer and a second poly-crystalline layer. A boundary is between the first poly-crystalline layer and the second poly-crystalline layer.

Dismountable cleaning head for sweeping apparatus

A cleaning head for a sweeping and wringing apparatus, connected with a connecting part thereof, comprises a cleaning element, having a sweeping part and a held part, a base plate on an upper side of the cleaning part, on a top side carrying two fastening elements which each have a hole, and a fastening device for mounting the fastening elements on a lower end of a connecting part, with the fastening device further comprising two end pieces, each having a cross-shaped cross-section and an outer projection with a circular cross-section, leaning against one of the fixing elements, passing through the hole thereof, and an inner projection, and a spring, placed between the two end pieces and having ends that are put over the inner projections of the two end pieces, so that the cleaning head is easily installed and replaced.

Device signature generation

Methods and systems for generating a signature for a device include pre-charging a plurality of conductors to a first voltage level. A voltage leakage for each of the conductors is determined, and a device signature is generating based on the determined leakage.

Cleaning apparatus

A cleaning apparatus comprises a main rod, a wringing tube, a bearing, a lock, and a cleaning rag assembly. The lock has an upper end with an elastic holding assembly with insertion heads which respectively enter blocking holes of the main rod. Thereby the lock is easily mounted at the lower end of said main rod and dismounted therefrom, allowing to replace the cleaning rug assembly. The wringing tube has an upper end with a unidirectional wheel and an opening through which a lever assembly reaches which engages with a unidirectional wheel, permitting the unidirectional wheel to turn in one and only one direction, so that the cleaning rag is wrung dry with minimal physical effort.

Combination castor whose castor assemblies are braked and positioned simultaneously

A combination castor includes a linking device, and a plurality of castor assemblies connected with the linking device. Each of the castor assemblies includes an operation unit, a braking unit, and at least one roller. The operation unit of each of the castor assemblies includes a mounting seat, a slide, and a driven block. The braking unit of each of the castor assemblies includes a bushing, a housing, a control shaft, and a braking member. The roller of each of the castor assemblies has an inner periphery provided with a plurality of locking grooves. Thus, the linking device can drive and operate the castor assemblies to brake and position the castor assemblies simultaneously.

COMBINATION CASTOR WHOSE CASTOR ASSEMBLIES ARE BRAKED AND POSITIONED SIMULTANEOUSLY

A combination castor includes a linking device, and a plurality of castor assemblies connected with the linking device. Each of the castor assemblies includes an operation unit, a braking unit, and at least one roller. The operation unit of each of the castor assemblies includes a mounting seat, a slide, and a driven block. The braking unit of each of the castor assemblies includes a bushing, a housing, a control shaft, and a braking member. The roller of each of the castor assemblies has an inner periphery provided with a plurality of locking grooves. Thus, the linking device can drive and operate the castor assemblies to brake and position the castor assemblies simultaneously. 1. A combination castor , comprising:a linking device; anda plurality of castor assemblies connected with the linking device;wherein each of the castor assemblies comprises:an operation unit;a braking unit connected with the operation unit; andat least one roller connected with the braking unit;the operation unit of each of the castor assemblies includes:a mounting seat having an interior provided with a slideway;a slide slidably mounted in the slideway of the mounting seat and having a first end provided with a pivot portion pivotally connected with the linking device and a second end provided with a guide ramp and a guide slot; anda driven block abutting the slide and having a bottom provided with a pressing lug pressing the guide ramp of the slide;the braking unit of each of the castor assemblies includes:a bushing mounted on the mounting seat of the operation unit;a housing rotatably mounted on the bushing;a top cap mounted on the bushing;a control shaft movably mounted in the bushing and having an upper end secured on the driven block of the operation unit to move in concert with the driven block of the operation unit and a lower end extended into the housing; anda braking member secured on the lower end of the control shaft to move in concert with the control shaft and having an end ...

Atomic layer deposition based process for contact barrier layer

Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.

Combination castor brake system whose castor assemblies are braked and positioned simultaneously

A combination castor brake system includes a linking device, and a plurality of castor assemblies connected with the linking device. Each of the castor assemblies includes an operation unit, a braking unit connected with the operation unit, and at least one roller connected with the braking unit. The operation unit of each of the castor assemblies includes a mounting seat, a slide, and at least two limit rods. The braking unit of each of the castor assemblies includes a housing, a top cap, a control shaft, an elastic member, and a braking member. The roller of each of the castor assemblies is rotatably mounted on the housing of the braking unit. Thus, the linking device can drive and operate the castor assemblies to brake and position the castor assemblies simultaneously.

Cleaning apparatus with fast wringing ability

A cleaning apparatus comprises a main rod, a wringing tube, a bearing, a lock, and a cleaning rag assembly. The wringing tube is coaxially put over the main rod and is glidingly movable along the main rod. The fastening device is mounted on the lower end of the main rod. The cleaning rag assembly surrounds a periphery of the main rod at a lower end thereof, having an upper end held by a connecting ring, which is mounted on the wringing tube, and a lower end mounted on the fastening device, allowing easily to replace the cleaning rag assembly.

Threshold Voltage Tuning For Fin-Based Integrated Circuit Device

Methods for tuning threshold voltages of fin-like field effect transistor devices are disclosed herein. An exemplary method includes forming a first opening in a first gate structure and a second opening in a second gate structure. The first gate structure is disposed over a first fin structure, and the second gate structure is disposed over a second fin structure. The method further includes filling the first opening and the second opening by forming a gate dielectric layer, forming a threshold voltage tuning layer over the gate dielectric layer, etching back the threshold voltage tuning layer in the second opening, forming a work function layer over the threshold voltage tuning layer, and forming a metal fill layer over the work function layer. The threshold voltage tuning layer includes tantalum and nitrogen. The etching back uses a tungsten-chloride containing precursor. 1. A method comprising:forming a first opening in a first gate structure and a second opening in a second gate structure, wherein the first gate structure is disposed over a first fin structure and the second gate structure is disposed over a second fin structure; and forming a gate dielectric layer,', 'forming a threshold voltage tuning layer over the gate dielectric layer, wherein the threshold voltage tuning layer includes tantalum and nitrogen,', 'etching back the threshold voltage tuning layer in the second opening using a tungsten-chloride containing precursor,', 'forming a work function layer over the threshold voltage tuning layer, and', 'forming a metal fill layer over the work function layer., 'filling the first opening and the second opening by2. The method of claim 1 , wherein the forming the threshold voltage tuning layer includes performing an atomic layer deposition process.3. The method of claim 1 , wherein the etching back the threshold voltage tuning layer includes tuning etching parameters to reduce a threshold voltage corresponding with the second gate structure relative to a ...

TV SIGNAL PROCESSING MODULE HAVING A MULTIPLE-DECK MINIPCI SOCKETS

A TV signal processing module includes a TV module, an internal transformer, and an external cable. The TV module is used for processing a TV signal. The internal transformer connected to the TV module is used for delivering the TV signal to the TV module. The internal transformer includes a high-voltage blocker for blocking a high-voltage signal to be applied to the TV module. The external cable, one end of which is connected to a TV cable and the other end of which is connected to the internal transformer, is used for sending the TV signal from the TV cable to the internal transformer.

Enhancing integrated circuit density with active atomic reservoir

Methods are disclosed herein for fabricating integrated circuit interconnects that can improve electromigration. An exemplary method includes forming a first metal layer of an integrated circuit and forming a second metal layer of the integrated circuit. The first metal layer includes a first conductor electrically coupled to a second conductor, and the second metal layer includes a third conductor electrically coupled to the first conductor. The first conductor, the second conductor, and the third conductor are configured, such that electrons flow from the second conductor to an area of the first conductor where electrons flow from the third conductor to the first conductor.

Method for analyzing electromigration (EM) in integrated circuit

Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to the current simulation result of the IC. It is determined whether to relax the EM rule on the metal segment according to the number of vias over the metal segment in the layout. The vias are in contact with the metal segment.

COMBINATION CASTOR WHOSE CASTOR UNITS ARE BRAKED SIMULTANEOUSLY

A combination castor includes a control unit, a linking unit, and at least two castor units. The control unit includes at least one mounting seat, at least one bushing mounted in the at least one mounting seat, and a pedal pivotally located at a side of the at least one mounting seat. The linking unit includes a propeller shaft extended through the at least one bushing and locked onto the pedal, at least one rotation plate secured on the propeller shaft, and at least two links each pivotally connected with the at least one rotation plate and the respective castor unit. Thus, when the pedal is stepped, the propeller shaft is driven to rotate the at least one rotation plate which drives the links to operate the castor units so as to brake or position the castor units simultaneously. 1. A combination castor comprising:a control unit;a linking unit connected with the control unit; andat least two castor units connected with the linking unit;wherein the control unit includes:at least one mounting seat;at least one bushing mounted in the at least one mounting seat and having an interior provided with a mounting hole; anda pedal pivotally mounted on a side of the at least one mounting seat and having an interior provided with a driving hole aligning with the mounting hole of the at least one bushing;the linking unit includes:a propeller shaft extended through the mounting hole of the at least one bushing and combined with the driving hole of the pedal;at least one rotation plate secured on the propeller shaft and rotatable in concert with the propeller shaft; andat least two links each having a first end pivotally connected with the at least one rotation plate and a second end pivotally connected with a respective one of the at least two castor units.2. The combination castor of claim 1 , whereinthe mounting hole of the at least one bushing has a hexagonal shape and is fitted onto the propeller shaft of the linking unit;the propeller shaft of the linking unit has a ...

Cleaning apparatus with tiltable cleaning head

A cleaning apparatus with tiltable cleaning head comprises a main rod, two wringing plates, a cleaning element with a bottom surface, a fastening device, a wringing device, and two connecting assemblies, Each of the two connecting assemblies has a first connecting piece, which is hingedly connected with the fastening device, and a second connecting piece, which is hingedly connected with one of the two wringing plates, The first and second connecting pieces are connected at a variable angle, allowing to incline the main rod, while the bottom surface of the cleaning element rests entirely on a floor to be cleaned, so that cleaning is made with better effect and less effort.

Semiconductor structure

A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

Docking station for connecting to a notebook computer

A docking station for connecting a notebook computer includes a supporting frame, a connector for electrically connecting to the notebook computer, and a handle pivoted to the supporting frame. A first slot is formed on the handle, and the handle includes a pushing part for pushing the connector in a first direction. The docking station includes a first stopper, and one end of the first stopper is disposed inside the first slot of the handle. The first stopper does not stop the connector when the handle is located in a first position. The pushing part pushes the connector in the first direction so that the connector is connected to the notebook computer, and the first slot drives the first stopper in a second direction so that the first stopper stops a side of the connector when the handle rotates from a first position to a second position.

Breathing mask

A breathing mask includes a mask body unit and a container. The mask body unit includes a mask body having an inner surface configured to cooperate with a user's face to define an interior space therebetween, and two straps respectively connected to two opposite sides of the mask body. The container has a container body defining a chamber for receiving working liquid and formed with a plurality of vent holes for communicating the chamber with the interior space. At least one gas generating unit is connected to the container, and includes an electrolysis device disposed in a casing thereof for electrolyzing the working liquid into a hydrogen/oxygen gas mixture.

Threshold voltage tuning for fin-based integrated circuit device

Methods for tuning threshold voltages of fin-like field effect transistor (FinFET) devices are disclosed herein. An exemplary integrated circuit device includes a high voltage n-type FinFET, a high voltage p-type FinFET, a low voltage n-type FinFET, and a low voltage p-type FinFET. Threshold voltages of the high voltage n-type FinFET and the high voltage p-type FinFET are greater than threshold voltages of the low voltage n-type FinFET and the low voltage p-type FinFET, respectively. The high voltage n-type FinFET, the high voltage p-type FinFET, the low voltage n-type FinFET, and the low voltage p-type FinFET each include a threshold voltage tuning layer that includes tantalum and nitrogen. Thicknesses of the threshold voltage tuning layer of the low voltage n-type FinFET and the low voltage p-type FinFET are less than thicknesses of the threshold voltage tuning layer of the high voltage n-type FinFET and the high voltage p-type FinFET, respectively.

Bed castor

Cleaning apparatus

A cleaning apparatus comprises a main body with a handle, a wiping strip, mounted on a front side of the main body, and a cleaning head, mounted on a rear side of the main body, and is characterized by the main body having parallel front and rear mounting grooves for easy mounting and replacing the wiping strip and the cleaning head.

Atomic Layer Deposition Based Process for Contact Barrier Layer

Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase. 1. A method comprising: heating the workpiece,', 'performing a plasma pulse phase that exposes the surface of the dielectric layer to a plasma that includes nitrogen,', 'performing a purge phase, and', 'repeating the performing of the plasma pulse phase and the performing of the purge phase until reaching target nitridation of the surface of the dielectric layer; and, 'nitridizing a surface of a dielectric layer of a workpiece in an atomic layer deposition (ALD) chamber, wherein the nitridizing includesdepositing a metal layer on the nitridized surface of the dielectric layer.2. The method of claim 1 , wherein the heating the workpiece includes maintaining a temperature in the ALD chamber of about 300° C. to about 400° C.3. The method of claim 1 , wherein the nitridizing the surface of the dielectric layer includes maintaining a pressure in the ALD chamber of about 0.5 torr to about 5 torr.4. The method of claim 3 , wherein a pressure maintained in the ALD chamber ...

Portable electronic device with tiltedly installed centrifugal fan

A portable electronic device includes a main body and a heat dissipation module with a tiltedly installed centrifugal fan inside thereof. The main body includes an upper housing wall and a lower housing wall. The heat dissipation module includes a centrifugal fan, a heat dissipation fin array and a heat pipe. The centrifugal fan includes an impeller, a radial air outlet, an upper axial air inlet and a lower axial air inlet, wherein the centrifugal fan has a first side that is in contact with the upper housing wall and an opposite second side that is in contact with the lower housing wall. The heat dissipation fin array is located at the radial air outlet of the centrifugal fan. The heat pipe has a first end connected with the heat dissipation fin array and a second opposite end connected with a heat source.

Telescopic Cart

A telescopic cart includes a storage unit, a support unit, a positioning unit, a pressing control handle, a limit unit, and a handle. The support unit includes a first supporting frame and a second supporting frame which are pivotally connected. The first supporting frame is pivotally connected with the storage unit. The second supporting frame is slidably connected with the storage unit. The positioning unit is used to position the first supporting frame and the second supporting frame without different angles defined therebetween, so that the storage unit is located at different height. 1. A telescopic cart comprising:a storage unit, a support unit, a positioning unit, a pressing control handle, a limit unit, and a handle;wherein:the storage unit includes a storage body, two rails, a base plate, a control button, and a torsion spring;the storage body is provided with two insertion holes and two receiving grooves;the two receiving grooves are located adjacent to the two insertion holes respectively;each of the two receiving grooves is provided with two cavities which are in line with one of the two insertion holes;the storage body has a top provided with a plurality of storage portions and a bottom provided with a bottom channel;the two rails are secured to the bottom channel;each of the two rails includes a main section and a secondary section extending from a top of the main section;a predetermined angle is defined between the main section and the secondary section;the main section is provided with a slideway;the secondary section is provided with a plurality of locking grooves extending in a lengthwise direction of the slideway;the base plate is secured in the bottom channel;the control button is pivotally connected with the base plate;the control button is provided with a recess;the torsion spring is biased between the base plate and the control button;the support unit includes a first supporting frame, a second supporting frame, a sliding rod, two connecting ...

Telescopic cart

A telescopic cart includes a storage unit, a support unit, a positioning unit, a pressing control handle, a limit unit, and a handle. The support unit includes a first supporting frame and a second supporting frame which are pivotally connected. The first supporting frame is pivotally connected with the storage unit. The second supporting frame is slidably connected with the storage unit. The positioning unit is used to position the first supporting frame and the second supporting frame without different angles defined therebetween, so that the storage unit is located at different height.

PHYSICAL VAPOR DEPOSITION APPARATUS

A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

Active Atomic Reservoir For Enhancing Electromigration Reliability In Integrated Circuits

An integrated circuit (IC) comprises a first conductor in one layer of the IC, a second conductor in another layer of the IC, and a first metal plug connecting the first and second conductors. The IC further comprises an atomic source conductor (ASC) in the one layer of the IC and joined to the first conductor, and a second metal plug connecting the ASC to a voltage source of the IC. The first conductor and the ASC are configured to be biased to different voltages so as to establish an electron path from the second metal plug to the first metal plug such that the ASC acts as an active atomic source for the first conductor.

Holding assembly for sweeping and wringing apparatus

A holding assembly for a sweeping and wringing apparatus comprises a fastening assembly, fastened to a lower end of a holding rod of the sweeping and wringing apparatus, having a chamber which is enclosed by a left wall and a right wall into which insertion holes are bored, an insertion assembly, inserted between the insertion holes and having two cross-shaped insertion heads separated by a spring, and a release assembly, shaped like the letter U and having two end sections with chamfered end faces which wedge-like respectively enter spaces between the left and right walls and the insertion heads when the release assembly is pressed on, with a spring exerting a counterforce, so that a cleaning head of the sweeping and wringing apparatus is easily replaced.

MAGNETIC COMPONENT

A magnetic component includes at least one coil and a permeable structure. The coil is formed by a radially wound wire, and the thickness of the wire is various according to the distance from a portion of the wire to the center axis of the coil. The coil is covered by the permeable structure.

Atomic layer deposition based process for contact barrier layer

Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.

Enhancing Integrated Circuit Density with Active Atomic Reservoir

An integrated circuit (IC) comprises first and second conductors in one layer of the IC, wherein the first conductor is oriented along a first direction, the second conductor is oriented along a second direction generally perpendicular to the first direction, and the second conductor is electrically connected to the first conductor. The IC further comprises a third conductor in another layer of the IC, oriented along the second direction, and above the second conductor; a first via connecting the first and third conductors; and a second via connecting the second and third conductors. 1. An integrated circuit (IC) , comprising:first and second conductors in one layer of the IC, wherein the first conductor is oriented along a first direction, the second conductor is oriented along a second direction generally perpendicular to the first direction, and the second conductor is electrically connected to the first conductor;a third conductor in another layer of the IC, oriented along the second direction, and above the second conductor;a first via connecting the first and third conductors; anda second via connecting the second and third conductors.2. The IC of claim 1 , wherein the second conductor is connected to a floating n-type active region of the IC.3. The IC of claim 1 , wherein the first and third conductors are biased to a negative supply voltage (VSS) of the IC.4. The IC of claim 3 , wherein the first claim 3 , second claim 3 , and third conductors are configured to establish a first electron path away from the first via along the first conductor and a second electron path to the first via along the second conductor claim 3 , wherein a current density of the first electron path is greater than a current density of the second electron path.5. The IC of claim 1 , wherein the first and third conductors are biased to a positive supply voltage (VDD) of the IC.6. The IC of claim 5 , wherein the first claim 5 , second claim 5 , and third conductors are configured to ...

Connecting assembly for sweeping and wringing apparatus

A connecting assembly for a sweeping and wringing apparatus is used in conjunction with a sweeping and wringing apparatus having a cleaning head, a main rod and a U-shaped wringing rod and comprises a connecting rod, having an upper end that is hingedly connected with the U-shaped wringing rod and a lower end reaching down inside the main rod, and a connecting part, having an upper end with a joint that is hingedly connected with the lower end of the connecting rod, an extended middle part and a fixing part that is fastened to the cleaning head, so that assembling and replacing of the cleaning head are facilitated and damaging of furniture during sweeping is avoided.

Cleaning apparatus with fast wringing ability

A cleaning apparatus comprises a main rod, a wringing tube, a bearing, a lock, and a cleaning rag assembly. The wringing tube is coaxially put over the main rod and is glidingly movable along the main rod. The fastening device is mounted on the lower end of the main rod. The cleaning rag assembly surrounds a periphery of the main rod at a lower end thereof, having an upper end held by a connecting ring, which is mounted on the wringing tube, and a lower end mounted on the fastening device, allowing easily to replace the cleaning rag assembly.

Bed that is Folded and Expanded Easily and Quickly

A bed includes a base unit, two frame units each having a first portion pivotally connected with the base unit, two leg units each pivotally connected with a second portion of a respective one of the two frame units, and two support units each having a first portion pivotally connected with the base unit and a second portion pivotally connected with a respective one of the two leg units. Thus, the base unit, each of the two support units, each of the two frame units and each of the two leg units construct a four-link mechanism so that the bed can be expanded for use and can be folded when not in use.

Enhancing Integrated Circuit Density with Active Atomic Reservoir

Methods are disclosed herein for fabricating integrated circuit interconnects that can improve electromigration. An exemplary method includes forming a first metal layer of an integrated circuit and forming a second metal layer of the integrated circuit. The first metal layer includes a first conductor electrically coupled to a second conductor, and the second metal layer includes a third conductor electrically coupled to the first conductor. The first conductor, the second conductor, and the third conductor are configured, such that electrons flow from the second conductor to an area of the first conductor where electrons flow from the third conductor to the first conductor. 1. A method comprising:forming a first metal layer of an integrated circuit, wherein the first metal layer includes a first conductor electrically coupled to a second conductor;forming a second metal layer of the integrated circuit, wherein the second metal layer includes a third conductor electrically coupled to the first conductor; andwherein the first conductor, the second conductor, and the third conductor are configured such that electrons flow from the second conductor to an area of the first conductor where electrons flow from the third conductor to the first conductor.2. The method of claim 1 , wherein the first conductor is oriented along a first direction claim 1 , the third conductor is oriented along a second direction substantially perpendicular to the first direction claim 1 , and the second conductor is oriented along the first direction.3. The method of claim 1 , wherein the first conductor is oriented along a first direction claim 1 , the third conductor is oriented along a second direction substantially perpendicular to the first direction claim 1 , and the second conductor is oriented along the second direction.4. The method of claim 1 , further comprising forming a via that electrically couples the first conductor to the third conductor.5. The method of claim 4 , wherein the ...

Apparatus for electro-chemical plating

An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

System for and method of checking joule heating of an integrated circuit design

A method of checking joule heating of an integrated circuit design, the method includes dividing the integrated circuit design into a plurality of windows, determining a power index of each window, adjusting the specification current value associated with each of the corresponding windows, and generating a current violation report, by a processor, of the integrated circuit. Each window includes one or more circuit elements. Each circuit element is associated with a corresponding current value. Each window is associated with a corresponding specification current value. Each power index is associated with a corresponding window. An amount of adjustment of the specification current value is a function of the power index of each corresponding window. The current violation report includes one or more entries. Each entry is associated with at least a corresponding window and one or more corresponding current values which exceed the corresponding adjusted specification current value.

Method for evaluating failure-in-time

A failure-in-time (FIT) evaluation method for an IC is provided. The FIT evaluation method includes accessing data representing a layout of the IC including a metal line and a plurality of vertical interconnect accesses (VIAs); picking a plurality of nodes along the metal line; dividing the metal line into a plurality of metal segments based on the nodes; and determining FIT value for each of the metal segments to verify the layout and fabricate the IC. The number of the nodes is less than the number of the VIAs, and a distance between two adjacent VIAs of the VIAs is less than a width of the metal line.

Method for evaluating failure-in-time

Failure-in-time (FIT) evaluation methods for an IC are provided. Data representing a layout of the IC is accessed, and the layout includes a metal line and a plurality of vertical interconnect accesses (VIAs). The metal line is divided into a first sub-line with a first line width and a second sub-line with a second line width. A plurality of nodes are picked along the first and second sub-lines of the metal line. The metal line is divided into a plurality of metal segments based on the nodes. FIT value is determined for each of the metal segments to verify the layout and fabricate the IC. The first line width is greater than the second line width.

Dismountable cleaning head for sweeping apparatus

A cleaning head for a sweeping and wringing apparatus, connected with a connecting part thereof, comprises a cleaning element, made of water-absorbing material and having an elongated sweeping part and a held part attached to a top side thereof, and a base plate, further comprising a lateral wall, formed like an elongated strip, and a counter plate, which together with said lateral wall forms a body with a U-shaped cross-section holding said held part of said cleaning element and has a top side carrying a top element which is fastened to said connecting part, so that said cleaning head is easily installed and replaced.

CASTOR THAT IS BRAKED AND POSITIONED SIMULTANEOUSLY

A castor includes a suspension unit, a castor body, a wheel unit, and a brake unit. The suspension unit includes an upright fixing bolt and a locking member. The wheel unit includes two rollers. The brake unit includes a positioning block, a sliding block, a biasing members, a drive member, and a braking pin. Thus, when the drive member of the brake unit is pressed, each of the rollers of the wheel unit is braked by and locked onto the castor body, and the castor body is locked onto the fixing bolt simultaneously, thereby locking the castor exactly and stably.

Cleaning head for sweeping and wringing apparatus

A cleaning head for a sweeping and wringing apparatus is mounted on a lower end of a connecting rod thereof and comprises a cleaning element, having a sweeping part and a held part, a base plate, holding the held part of said cleaning element and having two fixing elements, which each have a fixing hole and a guiding surface.

MAGNETIC DEVICE AND MANUFACTURING METHOD THEREOF

A manufacturing method of a magnetic device includes the steps of forming a magnetic substrate having a plurality of recesses, and forming at least one coil in the recess. In addition, a magnetic device is also disclosed. The magnetic device includes a magnetic substrate and at least one coil. The magnetic substrate has a plurality of recesses and the coil is disposed in the recess.

Method for analyzing electromigration (EM) in integrated circuit

Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. EM rule is kept on the metal segment when a single via is formed over and in contact with the metal segment in the layout. The EM rule is relaxed on the metal segment when two first vias are formed over and in contact with the metal segment in the layout. The two first vias have the same current direction.

Sweeping and wringing apparatus

A sweeping and wringing apparatus, comprising: a handle; a moving bar, having an upper end that is hingedly connected with said handle at a middle position thereof and a lower end that is placed inside said handle at a lower position thereof; a transmission rod, glidingly mounted within said handle and having an upper end that is hingedly connected with said lower end of said moving bar; a frame, having a vertical part with an upper end that is attached to said handle at a lower end thereof and a horizontal part with two far ends that define left and right sides; a pair of hinge plates, having an upper end that is hingedly connected with one of said far ends of said horizontal part of said frame and having a bent part with a bolt; a pulling element, attached to said lower end of said transmission rod; a pair of holding plates, having vertical ribs with inner ends that are hingedly connected with said pulling element and extending symmetrically to the left and right, respectively; and a cleaning head, fastened to said pair of holding plates, comprising a positioning plate and a cleaning element fastened to said positioning plate on a lower side thereof.

Connecting assembly for sweeping and wringing apparatus

A connecting assembly for a sweeping and wringing apparatus is used in conjunction with a sweeping and wringing apparatus having a cleaning head, a main rod and a U-shaped wringing rod and comprises a connecting rod, having an upper end that is hingedly connected with the U-shaped wringing rod and a lower end reaching down inside the main rod, and a connecting part, having an upper end with a joint that is hingedly connected with the lower end of the connecting rod, an extended middle part and a fixing part that is fastened to the cleaning head, so that assembling and replacing of the cleaning head are facilitated and damaging of furniture during sweeping is avoided.

Cleaning head with fixing device for cleaning apparatus

A cleaning head with fixing device is used in conjunction with a cleaning apparatus and mounted at a lower side thereof, comprising a cleaning element and first and second adhesive plates, which are attached to a top side of the cleaning element and a lower side of the cleaning apparatus; The first and second adhesive plates have a plurality of hooks and a fiber surface, which engage with each other for mounting the cleaning element on the cleaning apparatus.

Cleaning apparatus with easily replaceable cleaning head

A cleaning apparatus has two cleaning heads which are alternatively used for different cleaning, applications; in particular, a first cleaning head with a comparatively large surface for cleaning large areas and a second cleaning head with a sponge; The first and second cleaning heads are mounted on lower sides of two holding plates and easily replaced.

Castor Having Reinforced Strength

A castor includes an upright support tube, a mounting unit rotatably mounted on a lower end of the support tube, and a support bracket secured on the mounting unit. The mounting unit includes an upright hollow mounting post mounted on the support bracket and inserted into the support tube and a plurality of reinforcing plates mounted in the mounting post to reinforce a radial strength of the mounting post. The mounting post of the mounting unit has an outer wall provided with a plurality of radially and outwardly extending bushings abutting the inner wall of the support tube to reduce a friction between the mounting post and the support tube so as to facilitate rotation of the mounting post relative to the support tube.

Method for analyzing electromigration (EM) in integrated circuit

Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. A layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. Two first vias are formed over and in contact with the metal segment in the layout. EM rule is kept on the metal segment when a distance between the two first vias is greater than a threshold distance. The EM rule is relaxed on the metal segment when the distance between the two first vias is less than or equal to the threshold distance.

Cleaning apparatus with quickly replaceable cleaning head

A cleaning apparatus comprises: a main rod, a fastening device, a cleaning head and a wringing device. Two holding plates are mounted on the fastening device via two movable connecting pieces. The cleaning head has two hold plates and a sweeping element, attached to lower sides of the held plates. The held plates carry L-shaped fastening devices which respectively engage with openings in the holding plates and point outward, thereby being stably held in place due to elasticity of the sweeping element. Mounting and removing of the cleaning head is performed in a single step by longitudinal compressing of the sweeping element and allowing the fastening elements to engage with and disengage from the openings.

Enhancing integrated circuit density with active atomic reservoir

Methods are disclosed herein for fabricating integrated circuit interconnects that can improve electromigration. An exemplary method includes forming a first metal layer of an integrated circuit and forming a second metal layer of the integrated circuit. The first metal layer includes a first conductor electrically coupled to a second conductor, and the second metal layer includes a third conductor electrically coupled to the first conductor. The first conductor, the second conductor, and the third conductor are configured, such that electrons flow from the second conductor to an area of the first conductor where electrons flow from the third conductor to the first conductor.

Sweeping and wringing apparatus

A sweeping and wringing apparatus, comprising: a handle; a moving bar, having an upper end that is hingedly connected with the handle at a middle position thereof and a lower end that is placed inside the handle at a lower position thereof; a transmission rod, glidingly mounted within the handle and having an upper end that is hingedly connected with the lower end of the moving bar; a frame, having a vertical part with an upper end that is attached to the handle at a lower end thereof and a horizontal part with two far ends that define left and right sides; a pair of hinge plates, having an upper end that is hingedly connected with one of the far ends of said horizontal part of the frame and having a bent part with a bolt; a pulling element, attached to the lower end of the transmission rod; a pair of holding plates, having vertical ribs with inner ends that are hingedly connected with the pulling element and extending symmetrically to the left and right, respectively; and a cleaning head, fastened to the pair of holding plates, comprising a positioning plate and a cleaning element fastened to the positioning plate on a lower side thereof.

Portable electronic device with tiltedly installed centrifugal fan

A portable electronic device includes a main body and a heat dissipation module with a tiltedly installed centrifugal fan inside thereof. The main body includes an upper housing wall and a lower housing wall. The heat dissipation module includes a centrifugal fan, a heat dissipation fin array and a heat pipe. The centrifugal fan includes an impeller, a radial air outlet, an upper axial air inlet and a lower axial air inlet, wherein the centrifugal fan has a first side that is in contact with the upper housing wall and an opposite second side that is in contact with the lower housing wall. The heat dissipation fin array is located at the radial air outlet of the centrifugal fan. The heat pipe has a first end connected with the heat dissipation fin array and a second opposite end connected with a heat source.

METHOD FOR FABRICATING COILED NANO CARBON MATERIAL, COILED NANO CARBON LAYERED SUBSTRATE AND COILED NANO CARBON MATERIAL THEREOF

A preparing method for coiled nano carbon material is provided and includes forming a noble metal catalyst crystallite nucleus layer on the surface of the substrate by displacement of a noble metal catalyst, forming a composited nano carbon material on the metal layer of the substrate by using TCVD; in which the composited nano carbon material includes coiled carbon nano tubes and coiled carbon nano fiber. The measured quantity of the total coiled nano carbon tubes and coiled nano carbon fiber in the total measured quantity of nano carbon material is greater than 30%. The coiled nano carbon material can be acquired by scraping it off from the substrate surface. 1. A preparing method for coiled nano carbon material , comprising:providing a substrate, and cleaning the surface of said substrate;immersing the substrate in a noble metal catalyst solution which contains a noble metal catalyst, thereby forming a noble metal catalyst crystallite nucleus layer on the surface of the substrate, wherein the noble metal catalyst is selected from the group consisting of a first catalyst group, a second catalyst group, and combinations thereof;wherein the first catalyst group is selected from an organic chelate compounded of platinum, palladium, rhodium, chrome, ruthenium, osmium, or iridium, and mixtures thereof;wherein the second catalyst group is selected from an solution of chloride, sulfate, acetate, and mixtures compounded of platinum, palladium, rhodium, chrome, ruthenium, osmium, iridium, and mixtures thereof;drying the substrate having the noble metal catalyst crystalline nucleus layer;disposing the substrate having the noble metal catalyst crystallite nucleus layer formed thereon in a vacuum chamber, introducing an inert gas and a carbon source gas into the chamber with a initial vacuum, and heating the chamber to a predetermined growth temperature by thermal chemical vapor deposition (TCVD) process;growing a composited nano carbon material layer on the substrate with a ...

Tower-Based Power Generation Method And Device Thereof

A tower-based power generation method and device, generally including two buckets that are movable up and down alternately to carry water to an upper location to allow water to rush down to impact and drive power generation units to generate electrical power thereby achieving circulative power generation. The two buckets are mounted to a tower frame and are driven by a drive unit to move. The tower frame has a bottom in which a water storage trough is formed. Rotary mechanisms are arranged above the water storage trough and the rotary mechanisms are coupled to power generation units. Two sides of the tower frame are each provided with a water storage tank. The water storage tank has a bottom from which a pipe extends to a location above the respective rotary mechanism. 1. A tower-based power generation device , comprising:a tower frame, which has a bottom in which a water storage trough is formed and power generation units are arranged; anda first bucket and a second bucket, which is mounted to the tower frame to be alternately movable up and down along the tower frame;wherein the first bucket and the second bucket are driven by a drive unit to each carry water to an upper part of the tower frame to allow water to rush down to impact and drive power generation units to generate electrical power so as to achieve circulative power generation; andwherein the drive unit comprises a variable frequency drive motor.2. The tower-based power generation device according to claim 1 , whereinthe drive unit is mounted to a top of the tower frame and a cable is coupled to the drive unit and has two ends respectively provided with the first bucket and the second bucket, rotary mechanisms being arranged above the water storage trough, the rotary mechanisms being coupled to the power generation units, the tower frame having two sides at each of which a water storage tank is arranged, an inclined water chute being arranged above the water storage tank, an inclined stop piece being ...

SYSTEM FOR AND METHOD OF CHECKING JOULE HEATING OF AN INTEGRATED CIRCUIT DESIGN

A method of checking joule heating of an integrated circuit design, the method includes dividing the integrated circuit design into a plurality of windows, determining a power index of each window, adjusting the specification current value associated with each of the corresponding windows, and generating a current violation report, by a processor, of the integrated circuit. Each window includes one or more circuit elements. Each circuit element is associated with a corresponding current value. Each window is associated with a corresponding specification current value. Each power index is associated with a corresponding window. An amount of adjustment of the specification current value is a function of the power index of each corresponding window. The current violation report includes one or more entries. Each entry is associated with at least a corresponding window and one or more corresponding current values which exceed the corresponding adjusted specification current value. 1. A method of checking joule heating of an integrated circuit design , the method comprising:dividing the integrated circuit design into a plurality of windows, wherein each window of the plurality of windows comprises one or more circuit elements, wherein each circuit element of the one or more circuit elements is associated with a corresponding current value within the window, wherein each window is associated with a corresponding specification current value;determining a power index of each window from the current value associated with one or more circuit elements within the window, wherein each power index is associated with a corresponding window;adjusting the specification current value associated with each of the corresponding windows, wherein an amount of adjustment of the specification current value is a function of the power index of each corresponding window; andgenerating, by a processor, a current violation report of the integrated circuit comprising one or more entries, wherein ...

Method for evaluating failure-in-time

A FIT evaluation method for an IC is provided. The FIT evaluation method includes accessing data representing a layout of the IC comprising a number of metal lines and a number of VIAs; picking a number of nodes along the metal lines; dividing each of the metal lines into a number of metal segments based on the nodes; and determining a FIT value for each of the metal segments or VIAs to verify the layout and fabricate the IC.

High building power generation device

A high building power generation device includes a plurality of water storage tanks and at least one power generation unit. The water storage tanks are arranged at specific floors of a high building so that a predetermined vertical distance is provided between adjacent ones of the water storage tanks. The water storage tanks are connected to each other with pipes. A control valve is mounted at a connection of each water storage tank with the pipes. The power generation unit is arranged at a bottom floor of the high building. The pipes connecting with the water storage tanks have a lower opening that is located above the power generation unit. The water storage tanks accumulate and store used water from multiple floors and the control valves are openable to release the used water to impact and drive the power generation unit to generate electrical power.

CONDUCTIVE LINE-BASED TEMPERATURE-SENSING DEVICE

A temperature-sensing device configured to monitor a temperature includes: a first conductive line; a second conductive line, wherein the first and second conductive lines have respective different cross-sectional dimensions; a sensing circuit, coupled to the first and second conductive lines, and configured to determine a logic state of an output signal based on a difference between respective signal levels present on the first and second conductive lines; and a control circuit, coupled to the sensing circuit, and configured to determine whether the monitored temperature is above or below a pre-defined threshold temperature based on the determined logic state. 1. A temperature-sensing device configured to monitor a temperature , comprising:a first conductive line;a second conductive line, wherein the first and second conductive lines have respective different cross-sectional dimensions;a sensing circuit, coupled to the first and second conductive lines, and configured to determine a logic state of an output signal based on a difference between respective signal levels present on the first and second conductive lines; anda control circuit, coupled to the sensing circuit, and configured to determine whether the monitored temperature is above or below a pre-defined threshold temperature based on the determined logic state.2. The device of claim 1 , wherein the first and second conductive lines have respective different cross-sectional widths such that the first and second conductive lines have respective different resistance values under a same temperature.3. The device of claim 1 , wherein the signal levels present on the first and second conductive lines each comprises a discharging voltage level via a respective discharging rate.4. The device of claim 1 , wherein the control logic circuit is configured to determine whether the monitored temperature is above or below the pre-defined threshold temperature further based on a flipped logic state of the determined logic ...

TOWER BASED KINETIC ENERGY GENERATION METHOD AND DEVICE THEREOF

A tower-based kinetic energy generation method and device, generally including two buckets that are movable up and down alternately to carry water to an upper location to allow water to rush down to impact and drive power generation units to generate electrical power thereby achieving circulative power generation. The two buckets are mounted to a tower frame and are driven by a drive unit to move. The tower frame has a bottom in which a water storage trough is formed. Rotary mechanisms are arranged above the water storage trough and the rotary mechanisms are coupled to power generation units. Two sides of the tower frame are each provided with a water storage tank. The water storage tank has a bottom from which a pipe extends to a location above the respective rotary mechanism. 1. A tower-based kinetic energy generation device , comprising:a tower frame, which has a bottom in which a water storage trough is formed and a kinetic energy generation unit is arranged; anda first bucket and a second bucket, which are mounted to the tower frame to be alternately movable up and down along the tower frame;wherein the first bucket and the second bucket each carry water to an upper part of the tower frame to allow water to rush down to impact and drive the kinetic energy generation unit to generate kinetic energy.2. The tower-based kinetic energy generation device according to claim 1 , whereinthe tower frame comprises a drive unit mounted to a top thereof and a cable is coupled to the drive unit, the cable having two ends respectively provided with the first bucket and the second bucket, the water storage trough being formed in the bottom of the tower frame, the kinetic energy generation unit being arranged above the water storage trough, the tower frame comprising a water storage tank mounted thereto, an inclined water chute being arranged above the water storage tank associated with each of the first and second buckets, an inclined stop piece being arranged above the water ...

Method for evaluating failure-in-time

A FIT evaluation method for an IC is provided. The FIT evaluation method includes accessing data representing a layout of the IC comprising a number of metal lines and a number of VIAs; picking a number of nodes along the metal lines; dividing each of the metal lines into a number of metal segments based on the nodes; and determining a FIT value for each of the metal segments or VIAs to verify the layout and fabricate the IC.

METHOD FOR EVALUATING FAILURE-IN-TIME

Failure-in-time (FIT) evaluation methods for an IC are provided. Data representing a layout of the IC is accessed, and the layout includes a metal line and a plurality of vertical interconnect accesses (VIAs). The metal line is divided into a first sub-line with a first line width and a second sub-line with a second line width. A plurality of nodes are picked along the first and second sub-lines of the metal line. The metal line is divided into a plurality of metal segments based on the nodes. FIT value is determined for each of the metal segments to verify the layout and fabricate the IC. The first line width is greater than the second line width. 1. A failure-in-time (FIT) evaluation method for an integrated circuit (IC) , comprising:accessing data representing a layout of the IC that comprises a metal line and a plurality of vertical interconnect accesses (VIAs), wherein the metal line is divided into a first sub-line with a first line width and a second sub-line with a second line width;picking a plurality of nodes along the first and second sub-lines of the metal line;dividing the metal line into a plurality of metal segments based on the nodes; anddetermining FIT value for each of the metal segments to verify the layout and fabricate the IC,wherein the first line width is greater than the second line width.2. The FIT evaluation method as claimed in claim 1 , wherein dividing the metal line into the plurality of metal segments based on the nodes further comprises:dividing the first sub-line into at least one first metal segment based on the nodes corresponding to the first sub-line; anddividing the second sub-line into at least one second metal segment based on the nodes corresponding to the second sub-line.3. The FIT evaluation method as claimed in claim 1 , wherein dividing the metal line into the plurality of metal segments based on the nodes further comprises:dividing the metal line into a third metal segment based on a first node of the nodes corresponding ...

COVER RING AND GROUND SHIELD FOR PHYSICAL VAPOR DEPOSITION CHAMBER

A processing chamber includes a ground shield and a cover ring. The ground shield includes an annular body, and at least one guide pin extending from the annular body. The cover ring is positioned on the ground shield, and includes an annular body including at least one recess. At least a part of the at least one guide pin is receivable in the at least one recess, an inner cylindrical ring extends from the annular body, and an outer cylindrical ring extends from the annular body and is radially separated from the inner cylindrical ring by a horizontally extending portion of the annular body. 1. A processing chamber , comprising: an annular body, and', 'at least one guide pin extending from the annular body; and, 'a ground shield including,'} an annular body,', 'an inner cylindrical ring extending from the annular body of the cover ring,', 'an outer cylindrical ring extending from the annular body of the cover ring and radially separated from the inner cylindrical ring by a horizontally extending portion of the annular body of the cover ring, and', 'at least one recess defined in the outer cylindrical ring, wherein the at least one recess is configured to receive at least a part of the at least one guide pin., 'a cover ring positioned over the ground shield, and including,'}2. The processing chamber of claim 1 , whereinthe ground shield includes at least two guide pins extending from the annular body, and a first guide pin of the at least two guide pins is located at or adjacent an inner radial end of the ground shield and between the inner cylindrical ring and the outer cylindrical ring, and', 'a second guide pin of the at least two guide pins is located between the first guide pin and an outer wall of the ground shield, and below the outer cylindrical ring, and, 'the cover ring includes at least two recesses corresponding to the at least two guide pins, wherein'}wherein the at least one recess includes a first recess and a second recess, the first recess is defined ...

METHOD FOR EVALUATING FAILURE-IN-TIME

A failure-in-time (FIT) evaluation method for an IC is provided. The FIT evaluation method includes accessing data representing a layout of the IC including a metal line and a plurality of vertical interconnect accesses (VIAs); picking a plurality of nodes along the metal line; dividing the metal line into a plurality of metal segments based on the nodes; and determining FIT value for each of the metal segments to verify the layout and fabricate the IC. The number of the nodes is less than the number of the VIAs, and a distance between two adjacent VIAs of the VIAs is less than a width of the metal line. 1. A failure-in-time (FIT) evaluation method for an integrated circuit (IC) , comprising:accessing data representing a layout of the IC comprising a metal line and a plurality of vertical interconnect accesses (VIAs);picking a plurality of nodes along the metal line;dividing the metal line into a plurality of metal segments based on the nodes; anddetermining FIT value for each of the metal segments to verify the layout and fabricate the IC,wherein the number of the nodes is less than the number of the VIAs, and a distance between two adjacent VIAs of the VIAs is less than a width of the metal line.2. The FIT evaluation method as claimed in claim 1 , wherein picking the plurality of nodes along the metal line further comprises assigning the VIAs to be the nodes.3. The FIT evaluation method as claimed in claim 2 , wherein assigning the VIAs to be the nodes further comprises detecting whether or not a current passes through one of the VIAs claim 2 , and assigning the one of the VIAs to be one of the nodes when the current passes through the one of the VIAs.4. The FIT evaluation method as claimed in claim 1 , wherein picking the plurality of nodes along the metal line further comprises assigning one of the VIAs to be one of the nodes.5. The FIT evaluation method as claimed in claim 1 , wherein picking the plurality of nodes along the metal line further comprises ...

KEY STRUCTURE

A key structure is provided, including a housing, a shaft body, a first magnetic component and a second magnetic component. The housing has a bottom portion and a top portion which are opposite to each other, and has a first opening located at the top portion. The shaft body is coupled with the housing by passing through the first opening, and the shaft body is suitable for being pressed to move in a pressing direction from the top portion to the bottom portion. The first magnetic component is arranged on the shaft body. The second magnetic component is arranged on the housing. The first magnetic component and the second magnetic component are separated by the housing. 1. A key structure , comprising:a housing, comprising a bottom portion and a top portion which are opposite to each other, and a first opening located at the top portion;a shaft body, coupled with the housing through the first opening, wherein the shaft body is suitable for being pressed to move in a pressing direction;a first magnetic component, arranged on the shaft body; anda second magnetic component, arranged on the housing, wherein the first magnetic component and the second magnetic component are separated by the housing.2. The key structure according to claim 1 , wherein the second magnetic component applies a magnetic force component in a release direction to the first magnetic component to provide a restoring force to the shaft body claim 1 , and the release direction is opposite to the pressing direction.3. The key structure according to claim 1 , wherein a magnetization direction of the first magnetic component is opposite to a magnetization direction of the second magnetic component.4. The key structure according to claim 2 , wherein the shaft body comprises an upper end positioned higher than the top portion claim 2 , a lower end positioned lower than the top portion claim 2 , and a sidewall for connecting the upper end with the lower end; the first magnetic component is arranged on the ...

Method for analyzing electromigration (em) in integrated circuit

Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. EM rule is kept on the metal segment when a single via is formed over and in contact with the metal segment in the layout. The EM rule is relaxed on the metal segment when two first vias are formed over and in contact with the metal segment in the layout. The two first vias have the same current direction.

COVER RING AND GROUND SHIELD FOR PHYSICAL VAPOR DEPOSITION CHAMBER

An assembly includes a cover ring having a first surface and a second surface opposite the first surface, the first surface of the cover ring having a first roughness, and a deposition ring having a first surface facing the cover ring and a second surface opposite the first surface, the first surface of the deposition ring having a second roughness. The first roughness is different from the second roughness. 1. An assembly , comprising:a cover ring having a first surface and a second surface opposite the first surface, the first surface of the cover ring having a first roughness; anda deposition ring having a first surface facing the cover ring and a second surface opposite the first surface, the first surface of the deposition ring having a second roughness, wherein the first roughness is different from the second roughness.2. The assembly of claim 1 , wherein the first roughness is less than the second roughness.3. The assembly of claim 1 , wherein the first roughness is greater than the second roughness.4. The assembly of claim 1 , wherein the first surface of the deposition ring is directly below the first surface of the cover ring.5. The assembly of claim 1 , wherein the cover ring includes a metallic material.6. The assembly of claim 1 , wherein the deposition ring includes a ceramic material.7. The assembly of claim 1 , wherein the cover ring includes a lip extending from the first surface claim 1 , and wherein the lip has the first roughness.8. The assembly of claim 1 , wherein the cover ring includes a first portion that includes the first surface having the first roughness claim 1 , and wherein portions of the cover ring other than the first portion have a third roughness that is different than the first roughness.9. The assembly of claim 1 , wherein the cover ring is coated with a metallic material and the metallic material has the first roughness.10. A processing chamber claim 1 , comprising:a target having a first surface and a second surface that is ...

APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

In order to reduce the occurrence of current alarms in a semiconductor etching or deposition process, a controller determines an offset in relative positions of a cover ring and a shield over a wafer within a vacuum chamber. The controller provides a position alarm and/or adjusts the position of the cover ring or shield when the offset is greater than a predetermined value or outside a range of acceptable values. 1. An apparatus , comprising:a chamber;a wafer support stage inside the chamber for supporting a wafer;a shield disposed over the wafer support stage, the shield having a first opening exposing at least a portion of the wafer support stage;a cover ring disposed over the shield, the cover ring having a second opening exposing the portion of the wafer support stage; anda position sensor for determining whether the shield and cover ring are aligned such that a radial offset is less than an established value, wherein a signal from the position sensor triggers an alarm when the radial offset is greater than the established value.2. The apparatus of claim 1 , wherein the position sensor is configured to determine whether the shield and cover ring are aligned by measuring a distance between an outer periphery of the shield and an edge of the second opening.3. The apparatus of claim 1 , further comprising an adjustment mechanism for re-aligning the shield and the cover ring based on the radial offset determined by the position sensor.4. The apparatus of claim 1 , where the apparatus is at least one of: a material deposition apparatus and an etching apparatus.5. The apparatus of claim 1 , where the apparatus is a physical vapor deposition apparatus.6. The apparatus of claim 1 , further comprising a position adjustment mechanism for adjusting a relative position of the cover ring with respect to at least one of the shield and the wafer support stage.7. The apparatus claim 6 , further comprising a controller programmed to:determine an offset in the relative position ...

BREATHING MASK

A breathing mask includes a mask body unit and a container. The mask body unit includes a mask body having an inner surface configured to cooperate with a user's face to define an interior space therebetween, and two straps respectively connected to two opposite sides of the mask body. The container has a container body defining a chamber for receiving working liquid and formed with a plurality of vent holes for communicating the chamber with the interior space. At least one gas generating unit is connected to the container, and includes an electrolysis device disposed in a casing thereof for electrolyzing the working liquid into a hydrogen/oxygen gas mixture. 1. A breathing mask , comprising:a mask body unit including a mask body suitable for covering at least the nose of a user, and two straps respectively connected to two opposite sides of said mask body, said mask body having an inner surface configured to cooperate with the user's face to define an interior space therebetween, and an outer surface opposite to said inner surface;a container disposed on said inner surface of said mask body and having a container body that defines a chamber for receiving working liquid, said container body being formed with a plurality of vent holes at a top side thereof for communicating said chamber with said interior space; andat least one gas generating unit connected to said container and including a casing, an electrolysis device disposed in said casing for electrolyzing the working liquid into a hydrogen/oxygen gas mixture, a control member for controlling the operation of said electrolysis device, and a power source electrically connected to said electrolysis device and said control member.2. The breathing mask as claimed in claim 1 , wherein the working liquid contained in said chamber is one of pure water claim 1 , distilled water claim 1 , and mineral water.3. The breathing mask as claimed in claim 1 , wherein said mask body is made from one of plastic claim 1 , ...

PHYSICAL VAPOR DEPOSITION (PVD) SYSTEM AND METHOD OF PROCESSING TARGET

A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness. 1. A physical vapor deposition (PVD) system , comprising:a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer; and the target is configured to overlie the wafer;', 'an edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target;', 'a first portion of the edge of the target has a first surface roughness;', 'the first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target; and', 'the second portion of the edge of the target has a second surface roughness less than the first surface roughness., 'the target in the PVD chamber, wherein2. The PVD system of claim 1 , wherein:a first area of the edge of the target extending from the first surface of the target and overlying and extending toward a first area of the second portion of the edge of the target has a first size;a second area of the edge of the target extending from the first surface of the target and overlying and extending toward a second area of the second portion of the edge of the target has a second size; andthe first ...

INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME

An interconnect structure and methods of forming such, are described. The interconnect structure includes a first dielectric layer, first and second conductive lines disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a power rail disposed in the second dielectric layer, first conductive via disposed between the power rail and the first conductive line, second conductive via disposed between the power rail and the second conductive line, and one or more dummy vias disposed between the power rail and the first dielectric layer. The power rail and the one or more dummy vias are monolithic. 1. An interconnect structure , comprising:a first dielectric layer;first and second conductive lines disposed in the first dielectric layer;a second dielectric layer disposed over the first dielectric layer;a power rail disposed in the second dielectric layer;first conductive via disposed between the power rail and the first conductive line;second conductive via disposed between the power rail and the second conductive line; andone or more dummy vias disposed between the power rail and the first dielectric layer, wherein the power rail and the one or more dummy vias are monolithic.2. The interconnect structure of claim 1 , further comprising a first cap layer disposed on the first conductive line claim 1 , a second cap layer disposed on the second conductive line claim 1 , and a third cap layer disposed on the power rail.3. The interconnect structure of claim 2 , further comprising a first etch stop layer disposed on the first cap layer claim 2 , the second cap layer claim 2 , and the first dielectric layer claim 2 , wherein the second dielectric layer is disposed on the first etch stop layer.4. The interconnect structure of claim 3 , further comprising a second etch stop layer disposed on the third cap layer.5. The interconnect structure of claim 4 , further comprising a layer disposed between the power rail and the second ...

Power generation device

A power generation device includes a tower forming top and bottom reservoirs and a plurality of vertically arranged compartments between the top and bottom reservoirs. Each compartment is separated from the next lower compartment by a partition that defines a discharge opening. A rotary mechanism is arranged in each compartment and includes a rotary shaft carrying receptacles having openings set in different orientations. The shaft is coupled to a dynamo. Water is deposited in the top reservoir and is allowed to flow downward into the next lower compartment through the discharge opening for filling into the receptacles to cause rotation of the shaft, which in turn drives the dynamo to generate electrical power. Water flowing downward into the bottom reservoir can be selectively pumped back to the top reservoir for maintaining cyclic operation of the power generation device.

Device to rescue drowning people

Wiping device with a wringing mechanism used for cleaning purposes comprises a cleaning head with a cleaning sponge, a squeezing head, a main rod, a U-shaped wringing rod, two connecting rods, two transverse rods, and two squeezing rollers

Wiping device with a wringing mechanism comprises a cleaning head (1) provided with a cleaning sponge (12), a squeezing head (2) lying on an under side of the cleaning head and having a front and a rear part, a main rod fixed on an upper part of the squeezing head, a U-shaped wringing rod (4) having ends rotatably connected to the main rod and moving to and fro, two connecting rods (5) with upper ends rotatably connected to the wringing rod and lower ends passing through the squeezing head and fixed to the cleaning head, two transverse rods (6) attached to the front and the rear part of the squeezing head a fixed mutual distance apart, and two squeezing rollers (7) having squeezing sections arranged in a row eccentrically with the same orientation on one of the transverse rods so that pairs of squeezing sections on both transverse rods face each other. A well-defined gap remains between the two squeezing rollers. Each squeezing section has a round operating surface. W hen the cleaning head is pulled upward between the squeezing rollers the squeezing rollers rotate and the gap becomes smaller so that the cleaning sponge is effectively wrung out.

Sweeping and spinning apparatus connecting assembly for use in house, has connecting part with upper end comprising articulation connected, in articulated manner, with lower end of connecting rod, central extended part and fixation part

The assembly has a connecting rod (5a) with an upper end connected in an articulated manner with a U-shaped spinning rod (4a) and a lower end extending towards the bottom inside a main rod (3a). A connecting part (6) has an upper end with an articulation that is connected, in an articulated manner, with the lower end of the rod (5a), a central extended part and a fixation part which is fixed on a cleaning head (1a).

Device to rescue drowning people

本發明係有關一種溺水救援裝置，主要包括一旋轉座、一彈射裝置與一救援裝置所構成，彈射裝置與救援裝置設置在旋轉座上，藉由旋轉座上設有警示鈕來達到救援上最佳的警示功效，且可操控彈射裝置之角度調整架與夾持調整器將救援裝置之救生圈調整在最適當的彈射角度，而透過方向調整架來控制救援的方位，讓救援者利用彈弓方式，將彈帶體與救生圈一併拉動後向外彈射，進而將溺水者安全救上岸，藉之，不僅整體結構簡單便於操作且可有效達到救援上之實質效益，又具有警示性佳、使用方便與安全的優點，以符合進步性與產業利用性之產品者。

Mounting for bar-shaped sponge mop head comprise box which fits over longitudinal bar on head, rectangular fitment on top of box allowing it to be connected to wringing mechanism

The mounting for a bar-shaped sponge mop head (81) comprises a box with side walls (71) and a top (72) which fits over a longitudinal bar (82) on the head. A rectangular fitment (74) on top of the box allows it to be connected to a wringing mechanism (6).

Manually operated sweeping and wringing apparatus, has connecting part and connecting rod serving to connect to base plate and placed inside main rod, and spring placed between two end pieces of fixing device

Une tête de nettoyage (1a), reliée à une partie de raccordement (6), comporte un élément de nettoyage (12a), une plaque de base (11a) sur un côté supérieur de la partie de nettoyage, portant sur un côté supérieur deux éléments de fixation (15) qui ont chacun un trou, et un dispositif de fixation (7) pour le montage des éléments de fixation (15) sur une extrémité inférieure de la partie de raccordement (6), avec le dispositif de fixation (7) qui comporte en outre deux pièces d'extrémité, ayant chacune une section en forme de croix et une saillie extérieure avec une section circulaire, reposant contre un des éléments de fixation (15), en passant à travers le trou, et une saillie intérieure, et un ressort, placé entre les deux pièces d'extrémité et ayant deux extrémités qui sont placées sur les saillies intérieures des deux pièces d'extrémité, de telle sorte que la tête de nettoyage (1a) est facilement installée et remplacée.

REMOVABLE CLEANING HEAD FOR SCANNING APPARATUS

High building power generation device

A high building power generation device includes a plurality of water storage tanks and at least one power generation unit. The water storage tanks are arranged at specific floors of a high building so that a predetermined vertical distance is provided between adjacent ones of the water storage tanks. The water storage tanks are connected to each other with pipes. A control valve is mounted at a connection of each water storage tank with the pipes. The power generation unit is arranged at a bottom floor of the high building. The pipes connecting with the water storage tanks have a lower opening that is located above the power generation unit. The water storage tanks accumulate and store used water from multiple floors and the control valves are openable to release the used water to impact and drive the power generation unit to generate electrical power.

REMOVABLE CLEANING HEAD FOR SCANNING APPARATUS

Magnetic component

Rack structure

Apparatus and method for determining output signals according to pressure and depressing time

An apparatus and a method for determining output signals according to pressure and depressing time mainly includes a timer, a scanner and a keyboard connecting electronically to the timer and the scanner. The keyboard has a plurality of button keys. When in use, the timer is set to zero and stops counting time. Then the scanner scans the keyboard to locate the button key being depressed by an external force. A signal is output depending on the external force. A first signal is output when the external force is small. When the external force is large and the time counted by the timer does not exceed a selected time period, the first signal is output. When the time counted by the timer exceeds the selected time period, a second signal is output. Thus input information may be entered through fewer button keys, and injury that might otherwise occur by using composite keys may be avoided.

Fixing structure for cleaning component of sponge mop having water squeezing plate

Burn-in test apparatus

Etching-damage-free intermetal dielectric layer with thermal dissipation feature

A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Apparatus for electro-chemical plating

An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate a tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

Sweeping and wringing apparatus

Semiconductor structure with improved heat dissipation

A semiconductor structure is provided. The semiconductor structure includes a substrate and a device region formed over the substrate. The semiconductor structure further includes an interconnect structure formed over the device region and a first passivation layer formed over the interconnect structure. The semiconductor structure also includes a metal pad formed over and extending into the first passivation layer and a second passivation layer formed over the first passivation layer. The second passivation layer includes a thermal conductive material, and the thermal conductivity of the thermal conductive material is higher than 4 W/mK.

Semiconductor structure

A semiconductor structure includes a conductive line, a pad layer, and a barrier layer. The conductive line is embedded in a multi-level interconnect structure. The pad layer is over the conductive line. The barrier layer is between the conductive line and the pad layer. The pad layer is electrically connected to the conductive line through the barrier layer, and the barrier layer includes a first poly-crystalline layer and a second poly-crystalline layer. A boundary is between the first poly-crystalline layer and the second poly-crystalline layer.

Semiconductor arrangement and method of forming

A semiconductor arrangement includes a heat source above an interconnect layer and below a heat conductor. The heat conductor is coupled to a heat sink by a thermally conductive bonding layer. Heat from the heat source is conducted through the heat conductor in a direction opposite the direction of the interconnect layer, through the thermally conductive bonding layer, and to a heat sink. The heat conductor includes an arrangement of dielectric layers, dummy metal layers, and dummy VIA layers.

Keyswitch structure

A keyswitch structure has a slender key cap and an integral balance structure for a key with a short press stroke. The keyswitch structure has a casing and at least one key. The casing has at least one pair of hooks arranged on a bottom face thereof, and at least one receiving groove. The key has a key cap, a connection portion parallel extended from a bottom portion of the key cap, and a balance rod integrally arranged on an end side of the connection portion. The balance rod has two sides arranged in the two hooks, respectively. The present invention can simplify the assembly steps, and efficiently prevent the key from swinging and being wedged.

Mop

微滲供水管結構

置物箱

【物品用途】;　　本設計之置物箱，係一用於結合在自行車上的容器，其整體結構於造型上給予使用者新穎之感觀。;【設計說明】;　　本設計之「置物箱」。如附圖所示，係為長形箱體，具有Ｌ形頂蓋，邊緣皆具有斜切導角之設計，在前面、左側面與右側面則略呈弧面，並在前面與後面分別具有內凹以及直條紋路之設計，整體視覺呈現出平穩而堅固的美感，誠為新穎具實用性之設計者。;　　參考圖係為結合在自行車上的狀態。

Thin key structure for keyboards/keypads

A thin key structure includes a keycap, a key body, an elastic piece and a base. The keycap has a first side wall. The key body has a second side wall forming a hollow chamber in which the keycap can be put to connect the elastic piece. The inner of the second side wall is provided with guiding portions for guiding the keycap to move steadily in the key body. With the keycap being put in the key body, the total height of the key structure can be reduced, and the vertical moving distance of the keycap with respect to the key body to press the elastic piece can be shortened. Thus, the thin key structure can be made more compact.

植物溫控栽培系統

　　本發明係有關一種植物溫控栽培系統，主要包含補給水槽與控溫裝置所構成，該發明係藉由水源進入控溫裝置之昇降溫控制元件內部時，即可改變水源溫度，讓較高溫或低溫的水源可循著導流管流通於各盆栽的內底部，以改變植物根部之溫度，有助於植物生長，藉之，該發明可改善不易種植寒、熱帶植物水果之情形，以降低植栽成本，繼以誠為一相當符合其進步性之產品者。

Apparatus and methods for determining horizontal position of substrate using lasers

An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

削筆器

Plating system and method of plating wafer

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

Sweeping and wringing apparatus

Sweeping and wringing apparatus.

Sweeping and wringing apparatus

Halbleiterstruktur und verfahren zu deren herstellung

Eine Halbleiterstruktur weist eine Mehrebenen-Verbindungsstruktur, eine Passivierungsschicht, eine Sperrschicht und eine Pad-Schicht auf. Die Passivierungsschicht ist über der Mehrebenen-Verbindungsstruktur angeordnet. Die Sperrschicht belegt eine innere Seitenwand der Passivierungsschicht, eine Oberseite der Passivierungsschicht und eine Oberseite einer leitfähigen Leitung der Mehrebenen-Verbindungsstruktur. Die Sperrschicht weist eine erste Schicht, eine zweite Schicht, eine dritte Schicht und eine vierte Schicht auf. Die erste Schicht liegt in einer nanokristallinen Phase vor. Die zweite Schicht ist über der ersten Schicht angeordnet und liegt in einer amorphen Phase vor. Die dritte Schicht ist über der zweiten Schicht angeordnet und liegt in einer polykristallinen Phase vor. Die vierte Schicht ist über der dritten Schicht angeordnet und liegt in eine nanokristallinen Phase vor. Die Pad-Schicht ist über der Sperrschicht angeordnet.

Halbleiterstruktur und verfahren zu deren herstellung

Halbleiterstruktur mit:einer Mehrebenen-Verbindungsstruktur (150);einer Passivierungsschicht (220) über der Mehrebenen-Verbindungsstruktur (150);einer Sperrschicht (230, 230a), die eine innere Seitenwand (222s) der Passivierungsschicht (220), eine Oberseite (240t) der Passivierungsschicht (220) und eine Oberseite (222b) einer leitfähigen Leitung (152) der Mehrebenen-Verbindungsstruktur (150) belegt, wobei die Sperrschicht (230) Folgendes aufweist:eine erste Schicht (232a), die in einer nanokristallinen Phase vorliegt;eine zweite Schicht (234a), die über der ersten Schicht (232a) angeordnet ist und in einer amorphen Phase vorliegt;eine dritte Schicht (236a), die über der zweiten Schicht (234a) angeordnet ist und in einer polykristallinen Phase vorliegt; undeine vierte Schicht, die über der dritten Schicht (236a) angeordnet ist und in einer nanokristallinen Phase vorliegt; undeine Pad-Schicht (240) über der Sperrschicht (230).

Semiconductor structure

A semiconductor structure includes a multi-level interconnect structure, a passivation layer, a barrier layer, and a pad layer. The passivation layer is above the multi-level interconnect structure. The barrier layer lines an inner sidewall of the passivation layer, a top surface of the passivation layer and a top surface of a conductive line of the multi-level interconnect structure. The barrier layer includes a first layer, a second layer, a third layer, and a fourth layer. The first layer is in a nano-crystalline phase. The second layer is above the first layer and in an amorphous phase. The third layer is above the second layer and in a polycrystalline phase. The fourth layer is above the third layer and in a nano-crystalline phase. The pad layer is above the barrier layer.

Suction disk safety warning device

植栽容器

【物品用途】;本設計之植栽容器，係一用於種植植物的容器，其整體結構於造型上給予使用者新穎之感觀。;【設計說明】;本設計之「植栽容器」。如附圖所示，該容器呈圓柱狀，該容器主要分成有下、上二個部分，下方部分是以透明材質結合橫向有色線條交錯排列，且有色線條在前方處斷開而形成一直向透明條，該下方部分邊緣又具有連續的內凹設計，另外，上方部分則是單色的梯形皿器，下、上二個部分的比例並為2：1，使整體視覺具均衡感，誠為新穎具實用性之設計者。;本設計之「植栽容器」，左側視圖、右側視圖皆與後側相同，故省略前述二個視圖。

Bicycle trailer luggage

Intelligent pressure relaxation pillow

Roll ditch machine configuration

全功能無菌尿袋

Strip shaped cleaning component and application device thereof

Appareil de nettoyage avec serpilliere et tube d'essorage

飲料攪拌器