27-02-2008 дата публикации
Номер: CN0101131960A
Принадлежит:
A biepitaxial process of bipolar suspended PNP tube uses phosphorus-embedded technology. The process includes feeding, oxidation, phosphorus-embedded photolithography, etching, phosphorus-embedded injection, phosphorus-embedded annealing, boron-embedded first photolithography, injection, boron-embedded first annealing, first extension, antimony-embedded photolithography, injection, antimony-embedded annealing, boron-embedded second photolithography, injection, boron-embedded annealing, second extension, N-well photolithography, injection, N-well annealing, phosphorus deep diffusion, isolated diffusion, P-, base region injection, P+ injection, P+ annealing, emission region injection, emission region annealing, contact hole photolithography, etching, first aluminum sputtering, dielectric deposition, via-hole photolithography, etching, second aluminum sputtering, point photolithography, etching: forming IC point area. The process can reduce saturated voltage drop of suspended PNP tube, and ...
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