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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 2. Отображено 2.
08-10-2014 дата публикации

Robust fault detection method of nonlinear networked system under random packet losses

Номер: CN104090569A
Принадлежит:

The invention relates to a robust fault detection method of a discrete time networked system with random packet losses. The object is a time-varying system with unknown disturbance and a nonlinear term, parameters of the system vary along with time and meet norm bounded conditions, the nonlinear term meets fan-shaped domain bounded conditions, and the unknown input is any energy bounded signal with unknown statistical property. Through state augmentation, an original fault detection problem can be converted into a robust H8 filtering problem, namely, a robust fault detection filter is designed, and for any allowed time-varying parameter and external disturbance and all possible data losses, the difference between output of the fault detection filter and a fault signal is made to be as small as possible in the sense of H8. The Lyapunov function method is used for proving that a whole fault detection system is stable in asymptotic mean square and meets the corresponding H8 disturbance attenuation ...

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21-04-2023 дата публикации

Carrier mobility enhanced diamond field effect transistor and preparation method thereof

Номер: CN115995483A
Принадлежит:

The invention discloses a carrier mobility enhanced diamond field effect transistor and a preparation method thereof. The diamond field effect transistor is characterized in that a monocrystal diamond epitaxial film is arranged on a diamond substrate; the monocrystal diamond epitaxial film is provided with a first heavily-doped diamond film area and a second heavily-doped diamond film area; hydrogen terminal areas are arranged on the first heavily-doped diamond film area, the second heavily-doped diamond film area and the surface of the monocrystal diamond epitaxial film between the first heavily-doped diamond film area and the second heavily-doped diamond film area, and oxygen terminal areas are arranged on the surfaces of the other epitaxial films; the source electrode and the drain electrode are arranged on the channel region; a gate dielectric layer is arranged on the source electrode, the drain electrode and a channel region between the source electrode and the drain electrode; and ...

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