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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 13. Отображено 13.
01-01-2014 дата публикации

Asymmetrical channel quantum dot field effect photon detector

Номер: CN103489937A
Автор: Yang Xiaohong, Nie Chenglei, Shi Zhangchun, Ni Haiqiao, Han Qin
Принадлежит:

The invention discloses an asymmetrical channel quantum dot field effect photon detector. The photon detector is based on a source-drain channel structure, and the source-drain channel is of an asymmetrical structure, the electric conductivity of the source-drain channel is under own control of a source-drain voltage, and a sensitive area of optical detection is located at the center of the source-drain channel. An epitaxial structure of the photon detector comprises a two-dimensional electron gas forming layer or a two-dimensional electron hole forming layer, a light absorption layer, a quantum dot charge limiting layer and a surface cover layer from the substrate, wherein the two-dimensional electron gas forming layer comprises heterogenous junctions and a doped layer. The device has the high-sensitivity optical sensing function that the width of a conductive channel in dozens to hundreds of nanometers scale between source and drain is under own control of the source-drain voltage, a ...

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Номер записи: 1
19-06-2013 дата публикации

Method of developing substructure MBE (molecular beam epitaxy) with same mass on side wall of GaAs nanowire

Номер: CN103165418A
Автор: Zha Guowei, Li Mifeng, Yu Ying, Wang Lijuan, Xu Jianxing, Shang Xiangjun, Ni Haiqiao, He Zhenhong, Niu Zhichuan
Принадлежит:

Disclosed is a method of developing substructure MBE (molecular beam epitaxy) with same mass on the side wall of GaAs nanowire. The method comprises the following steps: (1) taking a semiconductor substrate; (2) developing a silica layer on the semiconductor substrate; (3) rinsing the semiconductor substrate developed with the silica layer; (4) using a autocatalysis method, developing nanowire on the silica layer and the top end of the nanowire has a drop of Ga (gallium), (5) using high As (arsenic) pressure to process and consume the drop of Ga on the top end of the nanowire, so that the developing of VLS (Vapor Liquid Solid) of the nanowire on the top end can be restrained to form a substrate; (6) depositing the drop of Ga on the substrate under the circumstance of low As pressure; (7) under the circumstance of As, combining and crystalizing the drop of As and the drop of Ga into quantum ring or quantum dot on the side wall of the nanowire on the substrate.

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Номер записи: 2
23-10-2013 дата публикации

Method for developing quantum dot on side wall of GaAs nanowire by utilizing nanoring as mask

Номер: CN103367588A
Автор: Zha Guowei, Li Mifeng, Yu Ying, Wang Lijuan, Xu Jianxing, Shang Xiangjun, Ni Haiqiao, He Zhenhong, Niu Zhichuan
Принадлежит:

The invention discloses a method for developing quantum dot on the side wall of GaAs nanowire by utilizing nanoring as a mask. The method comprises the step of taking one semiconductor substrate, the step of developing a silicon dioxide layer on the semiconductor substrate, the step of washing the semiconductor substrate on which the silicon dioxide layer is developed, the step of developing the nanowire on the silicon dioxide layer by adopting the autocatalysis method, wherein the top end of the nanowire is provided with Ga liquid drop, the step of processing and consuming the Ga liquid drop at the top end of the nanowire by adopting high As pressure, and restraining the growth of a VLS on the nanowire at the top end to form a substrate, the step of depositing the Ga liquid drop on the substrate under the environment with low As pressure, the step of combining and crystallizing the As and Ga liquid drop to form the nanoring on the side wall of the nanowire on the substrate in the As environment ...

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Номер записи: 3
13-03-2013 дата публикации

Method for manufacturing micro-lens array

Номер: CN102967891A
Автор: Zha Guowei, Yu Ying, Li Mifeng, Wang Lijuan, Ni Haiqiao, He Zhenghong, Niu Zhichuan
Принадлежит:

The invention provides a method for manufacturing a micro-lens array. The method comprises the following steps of: manufacturing an etching mask pattern on a gallium-series semiconductor substrate, wherein a plurality of circular-hole arrays are distributed on the etching mask pattern, and the circular-hole arrays correspond to a micro-lens array to be manufactured in position and shape; horizontally putting the gallium-series semiconductor substrate with the etching mask pattern into a corrosive solution which can generate Br2 for carrying out corrosion, wherein the solute of the corrosive solution is a reactant capable of generating Br2, and the solvent of the corrosive solution is an auxiliary solvent with a low melting point; and removing the etching mask pattern from the gallium-series semiconductor substrate to form the micro-lens array. According to the method provided by the invention, due to the use of a low-temperature etchant solution, a lateral under-etching effect in a corrosion ...

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Номер записи: 4
27-11-2013 дата публикации

Silicon-substrate semiconductor ultrashort pulse laser

Номер: CN103414106A
Автор: Ding Ying, Ni Haiqiao, Li Mifeng, Yu Ying, Zha Guowei, Xu Jianxin, Wang Lijuan, Niu Zhichuan
Принадлежит:

The invention discloses a silicon-substrate semiconductor ultrashort pulse laser which comprises a silicon substrate, a buffering layer, a lower light limiting wrapping layer, a lower potential barrier, an active layer, an upper potential barrier, an upper light limiting wrapping layer and an ohmic contact layer. The buffering layer, the lower light limiting wrapping layer, the lower potential barrier, the active layer, the upper potential barrier, the upper light limiting wrapping layer and the ohmic contact layer are sequentially manufactured on the silicon substrate. The lower light limiting wrapping layer, the lower potential barrier, the active layer, the upper potential barrier, the upper light limiting wrapping layer and the ohmic contact layer are of semiconductor laser extension structures. A groove is downwards formed in the surface of the ohmic contact layer. The groove is filled with silicon dioxide materials. A semiconductor amplifier is arranged on one side of the groove.

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Номер записи: 5
19-06-2013 дата публикации

Positioning method and device of self-organizing single quantum dot

Номер: CN103163109A
Автор: Shang Xiangjun, Ni Haiqiao, Zha Guowei, Yu Ying, Li Mifeng, Wang Lijuan, Xu Jianxing, Niu Zhichuan
Принадлежит:

The invention discloses a positioning method and a device of a self-organizing single quantum dot. The device comprises a laser, an ultraviolet light source device, a microobjective and a spectrograph, wherein the laser is used for generating exciting light and arouses a quantum dot in a quantum dot sample to produce a fluorescent light beam. The ultraviolet light source device is used for generating ultraviolet light and conducting photoresist exposure on a microcell of a single quantum dot. The microobjective is used for converging exciting light and ultraviolet light to the microcell of the surface of a sample of the single quantum dot, and collecting the florescence light beam of the quantum dot of the microcell, and also used for scanning the surface of the sample. The spectrograph is used for representing the ultraviolet light beam and obtaining florescence spectrum. The method includes that scanning is stopped after a split spectral line corresponding to the single quantum dot is ...

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Номер записи: 6
22-01-2014 дата публикации

Single photon emitter and manufacturing method thereof based on high refractive index contrast grating structure

Номер: CN103532010A
Автор: Wang Lijuan, Yu Ying, Zha Guowei, Xu Jianxing, Ni Haiqiao, Niu Zhichuan
Принадлежит:

The invention discloses a single photon emitter and a manufacturing method thereof based on a high refractive index contrast grating structure. The single photon emitter comprises a GaAs substrate, wherein an epitaxial wafer is prepared on the GaAs substrate, and comprises a GaAs buffer layer (1), DBR (Distributed Bragg Reflector) layers (4) and (6), an InAs quantum dot active area (5) and a high refractive index contrast grating (a low refractive index material (7) and a high refractive index material (8)) sequentially from the bottom up. The GaAs buffer layer is etched and exposed on the epitaxial wafer by adopting a standard photetching technology and an ICP (Inductively Coupled Plasma) technology to serve as an N-type ohmic contact layer, and then alloys are evaporated on the high refractive index material and the GaAs buffer layer respectively to serve as a P-type electrode and an N-type electrode. The submicron grating is manufactured on the high refractive index material by utilizing ...

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Номер записи: 7
22-01-2014 дата публикации

Method for preparing quantum-dot single photon source in hexagonal-prism nano microcavity

Номер: CN103531679A
Автор: Yu Ying, Zha Guowei, Xu Jianxing, Shang Xiangjun, Li Mifeng, Ni Haiqiao, He Zhenhong, Niu Zhichuan
Принадлежит:

The invention provides a method for preparing a quantum-dot single photon source in a hexagonal-prism nano microcavity. The method comprises the steps as follows: step 1, taking a semiconductor substrate, and growing a silicon dioxide layer containing oxidation holes on the semiconductor substrate; step 2, washing the semiconductor substrate, where the silicon dioxide layer grows; step 3, adopting an autocatalysis method to grow a GaAs nanowire on the silicon dioxide layer, and forming a Ga droplet at the top of the GaAs nanowire; step 4, adopting high As pressure processing to consume the Ga droplet at the top of the GaAs nanowire, restraining axial VLS (vapor-liquid-solid method) growth of the GaAs nanowire, and forming a prismatic shaped structure; step 5, depositing a first AlGaAs barrier layer on the side wall of the prismatic shaped structure, and depositing GaAs quantum dots at a low speed on the surface of the AlGaAs barrier layer; step 6, covering the GaAs quantum dots with a second ...

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Номер записи: 8
22-07-2015 дата публикации

Method for manufacturing GaAs-based two-dimensional electron gas plasma oscillation terahertz detector

Номер: CN104795461A
Автор: Xu Jianxing, Zha Guowei, Zhang Lichun, Wei Sihang, Ni Haiqiao, He Zhenhong, Niu Zhichuan
Принадлежит:

A method for manufacturing a GaAs-based two-dimensional electron gas plasma oscillation terahertz detector includes: manufacturing four photoetching mask plates with bowtie antennas; making an epitaxial wafer on a GaAs substrate; coating a SiO2 film on the surface of the epitaxial wafer by means of evaporation; making patterns on the SiO2 film; making patterns on a second GaAs layer; etching; making patterns on the exposed second GaAs layer and the SiO2 film; evaporating Au/Ge/Ni metal, and stripping to form a source and a drain; annealing; transferring patterns of the fourth photoetching mask plate to a third AlGaAs layer with an epitaxial wafer exposed by means of photoetching; evaporating Ti/Au metal on the surface of the epitaxial wafer, and stripping to form a gate electrode on the third AlGaAs layer; leading a lead from the electrode to finish preparation. Frequency resonance range can be affected by bias voltage changes, and accordingly response gains of different frequencies can ...

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Номер записи: 9
22-01-2014 дата публикации

Preparation method of multi-port quantum regulation and control device based on bifurcated nanowire

Номер: CN103531441A
Автор: Yu Ying, Li Mifeng, He Jifang, Zha Guowei, Xu Jianxing, Shang Xiangjun, Wang Lijuan, Ni Haiqiao, He Zhenhong, Niu Zhichuan
Принадлежит:

The invention discloses a preparation method of a multi-port quantum regulation and control device based on a bifurcated nanowire. The method comprises the following steps that 1, an Si substrate is taken; a naturally formed silica thin layer exists on the surface of the Si substrate; 2, the Si substrate is cleaned; 3, a GaAs nanowire is grown on the silica layer by an auto-catalysis method; N-type or P-type doping is selectively performed on the GaAs nanowire; 4, Ga drops at the top end of the GaAs nanowire are consumed by high As pressure treatment; growth of VLS (Vapor-Liquid-Solid) at the top end of the GaAs nanowire is restrained; 5, InAs quantum dots are deposited at a low speed on a side wall of the GaAs nanowire in a low As pressure environment; 6, a GaAs layer is grown on the InAs quantum dots; a bifurcated structure substrate is formed; 7, the bifurcated structure substrate is covered with an AlGaAs barrier layer; and 8, a GaAs protective layer is grown on the surface of the AlGaAs ...

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Номер записи: 10
09-10-2013 дата публикации

Optical fiber and optical electronic device vertical coupling method

Номер: CN103345028A
Автор: Zha Guowei, Niu Zhichuan, Ni Haiqiao, Li Mifeng, Yu Ying, Wang Lijuan, Xu Jianxing, Shang Xiangjun, He Zhenhong
Принадлежит:

The invention discloses an optical fiber and optical electronic device vertical coupling method. The method comprises the steps that the surface of an optical electronic device is pre-coated by a layer of photoresist; an aligning hole array is formed in the surface of the optical electronic device through the photolithography; coating layers on the end portions of optical fibers are stripped to expose optical fiber inner cores; under the assistance of a microscope and a displacement platform, the optical fiber inner cores exposed out of the end portions of the optical fibers are inserted into aligning holes and fixed through colloid. The optical fiber and optical electronic device vertical coupling method is particularly applicable to optical fiber coupling output of optical electronic devices like single-photo sources which are small in light area and in need of spatial isolation, and has the advantages of being high in spatial resolution ratio and simple and reliable in technology.

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Номер записи: 11
10-07-2013 дата публикации

Molecular beam epitaxy growth method of low-density InAs (Indium Arsenide) quantum dot

Номер: CN103194793A
Автор: Li Mifeng, Yu Ying, He Jifang, Zha Guowei, Shang Xiangjun, Ni Haiqiao, He Zhenhong, Niu Zhichuan
Принадлежит:

The invention discloses a growth method of a low-density InAs (Indium Arsenide) quantum dot. The growth method comprises the following steps of: 1: inserting an InAs sacrificial layer quanta point before an InAs active layer quanta point is grown; 2: completely desorbing the InAs sacrificial layer quanta point by annealing in situ at high temperature; and 3: fine adjusting the critical growth parameter of the InAs sacrificial layer quanta point converted from two dimensions to three dimensions, and growing the InAs active layer quanta point. According to the invention, the critical growth parameter, which is acquired in situ, of the InAs sacrificial layer quanta point converted from two dimensions to three dimensions effectively reduces the influence brought by the random error of a system, so that higher low-density repetitiveness of the InAs sacrificial layer quanta point near the critical growth parameter is achieved, and the growth success ratio of the low-density InAs sacrificial layer ...

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Номер записи: 12
23-10-2013 дата публикации

Terahertz source equipment based on semiconductor ultra-short pulsed laser

Номер: CN103368042A
Автор: Ni Haiqiao, Ding Ying, Xu Yingqiang, Li Mifeng, Yu Ying, Zha Guowei, Xu Jianxin, Niu Zhichuan
Принадлежит:

The invention discloses terahertz source equipment based on a semiconductor ultra-short pulsed laser. The terahertz source equipment comprises a semiconductor ultra-short pulsed laser used for generating an ultra-short pulse laser beam, a semiconductor optical amplifier used for amplifying the ultra-short pulse laser beam, and a photoconductive antenna or an electro-optical crystal used for generating terahertz waves after receiving the excitation of the amplified ultra-short pulse laser beam. According to the terahertz source equipment, the semiconductor ultra-short pulsed laser, the semiconductor optical amplifier and the photoconductive antenna or the electro-optical crystal are combined together, and an effective terahertz source is constructed. Compared with the conventional terahertz source equipment, the size is greatly reduced, the cost is reduced, the conversion efficiency is improved, and the problems about the miniaturization and the popularization of the terahertz source can ...

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Номер записи: 13