CQI CODIERUNGSVERFAHREN FOR HS-DPCCH

PLASMA DEVICE

PROBLEM TO BE SOLVED: To provide a plasma device capable of uniformly generating plasma in a reaction space, and achieving long life of components constituting a chamber. SOLUTION: An upper part of a cylinder-shaped chamber 11 having a closed bottom face is sealed by a suitably thin conductor plate 31. The conductor plate 31 is electrically separated from a side wall of the chamber 11 by an insulation part 41. A coil 21 is arranged above the conductor plate 31 coaxially with the chamber 11. A substrate 61 to be treated is laid on the bottom face of the chamber 11. A sufficiently strong variable magnetic field penetrates through the reaction space in the chamber 11 through the conductor plate 31 to generate the plasma in the reaction space. At the same time, while the plasma is generated, the conductor plate 31, especially, a whole inner surface facing the reaction space, is kept at an equipotential surface. COPYRIGHT: (C)2006,JPO&NCIPI ...

Channel quality information (CQI) coding for HS-DPCCH

In the channel quality information (CQI) coding method disclosed, basis sequences for generating codewords of 20 bits are provided, the basis sequences maximising system throughput. Five information bits are coded into a 20 bit CQI codeword using the basis sequences. The (20, 5) CQI basis sequences may be generated using 32 bit or 16 bit TECI (Transport Format Combination Indicator) codes. Also, since the HSDPA (High Speed Downlink Packet Access) system has been designed in order to increase system throughput, the CQI coding method of the present invention which shows the best system throughput in simulations can be the optimum CQI coding scheme for HSDPA. The CQI codewords are used to provide feedback e.g. in adaptive modulation/coding schemes (AMC) and hybrid automatic repeat request systems (HARQ).

THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME

A method for manufacturing a TFT array panel including forming a gate line having a gate electrode on a insulating layer, a gate insulating layer on the gate line, a semiconductor on the gate insulating layer, an ohmic contact on the semiconductor, a data line having a source electrode and a drain electrode apart form the source electrode on the ohmic contact, a passivation layer having a contact hole to expose the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole. The drain electrode and the source electrode are formed by a photolithography using a negative photoresist pattern. The negative photoresist pattern includes a first portion having a first thickness corresponding to a channel area, a second portion having a second thickness corresponding to a data line area, and a third portion having a third thickness corresponding to another area.

Thin film transistor array panel and manufacturing method thereof

A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

Method and device of measuring the distance to an object

A method of measuring the distance to an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object includes: generating a first photo-detection control signal to control the periodic amplitude-modulation of the radiated optical signal; generating a mask signal activated at least during a shuttering duration for resetting the voltage level at a sensing node; and generating a second photo-detection control signal based on Boolean combination of the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration.

Thin film transistor array panel and method of manufacturing the same

A thin film transistor (TFT) array panel and method of manufacturing the same are provided. The method includes forming a semiconductor layer and an ohmic contact layer over a gate line, forming a conductive layer on the ohmic contact layer, forming a first photosensitive layer pattern on the conductive layer, etching the conductive layer using the first photosensitive layer pattern as an etching mask, etching the ohmic contact layer and the semiconductor layer by a fluorine-containing gas, a chloride-containing gas, and an oxygen (O₂) gas using the first photosensitive layer pattern as an etching mask, removing the first photosensitive layer pattern to a predetermined thickness to form a second photosensitive layer pattern, and etching the conductive layer using the second photosensitive layer pattern as an etching mask to expose a part of the ohmic contact layer.

Channel Quality Information (CQI) coding method for HS-DPCCH

A coding method for generating (20, 5) channel quality information (CQI) comprises the steps of inputting 5 information bits, creating basis sequences for generating (32, 5) TFCI (Transport Format Combination Indicator) codes from (32, 10) TFCI codes, puncturing 16 bits from each of the (32, 5) TFCI codes in a predetermined bit pattern, repeating a predetermined bit (most significant bit) of each punctured code four times and using the results to encode the 5 information bits into a 20 bit CQI output codeword. In alternative embodiments (16, 5) TFCI codes are used. The CQI is encoded so as to maximise system throughput and provide an optimal CQI coding scheme for HSDPA (High Speed Downlink Packet Access). The CQI codewords are used to provide feedback e.g. in adaptive modulation/coding schemes (AMC) and hybrid automatic repeat request systems (HARQ).

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

A solar cell includes an optical absorption layer; a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; and a transparent electrode layer on the buffer layer, wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface of the buffer layer.

Cqi coding method for hs-dpcch

CQI coding method for HS-DPCCH

Verfahren zur Herstellung einer Flüssigkristallanzeige

MANUFACTURING THIN FILM TRANSISTOR ARRAY PANELS FOR FLAT PANEL DISPLAYS

A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 m to less than 4 m. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility.

Thin film transistor, method of manufacturing the same, display apparatus having the same and method of manufacturing the display apparatus

A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the gate electrode and overlaying the gate electrode as well as first and second conductive adhesive patterns formed on the semiconductor pattern and spaced apart from each other. The source electrode includes a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern. The drain electrode includes a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern. Etched portions of the first and second conductive adhesive patterns have a substantially vertical profile to prevent the exposure of the source and drain electrodes, thereby improving the characteristics of the thin film transistor.

DEPTH PIXEL INCLUDED IN THREE-DIMENSIONAL IMAGE SENSOR AND THREE-DIMENSIONAL IMAGE SENSOR INCLUDING THE SAME

A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.

Plasma apparatus

Thin film transistor, method of manufacturing the same, display apparatus having the same and method of manufacturing the display apparatus

Transparent conductive layer and method of manufacturing the same

A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.

Method and device of measuring the distance to an object

To measure the distance to points on an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object, a first photo-detection control signal is generated to control the radiation of the optical signal. A mask signal is generated such that the mask signal is activated at least during a shuttering duration for resetting the voltage level at a sensing node (associated with an operation of a previous frame). A second photo-detection control signal is generated based on the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration.

CQI coding method for HS-DPCCH

CQI CODING METHOD FOR HS-DPCCH

METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer. 112.-. (canceled)13. A manufacturing method of a photoelectric conversion device , the method comprising:forming a protective layer on a front side of a semiconductor substrate;forming a first non-single crystalline semiconductor layer, a first conductive layer comprising a first impurity and a transparent conductive layer on a back side of the semiconductor substrate;forming a first collective electrode on a first portion of a back side of the transparent conductive layer; andforming a second conductive layer including the first impurity and a second impurity by inputting a second impurity in a second portion of the first conductive layer, wherein the second portion of the first conductive layer has no first collective electrode on a back side of the first conductive layer.14. The manufacturing method of a photoelectric conversion device of claim 13 , wherein the inputting of the second impurity in the second portion comprises using the first collective electrode as a mask.15. The manufacturing method of a photoelectric conversion device of claim 14 , wherein a concentration of the second impurity is greater than that of the first impurity in the second conductive layer.16. The manufacturing method of a photoelectric conversion device of claim 15 , further comprising forming a second collective electrode on a back side of the second ...

CQI CODING METHOD FOR HS-DPCCH

PROBLEM TO BE SOLVED: To provide a method of generating a basis sequence for CQI coding which can maximize the system performance. SOLUTION: In the channel quality information (CQI) coding method, a first basis sequence for generating sub-codes of 32 bits is created, and a second basis sequence for generating codewords of 20 bits is created using the first basis sequence, with the second basis sequence maximizing the system performance so that five information bits are coded into CQI code using the second basis sequence. Also, since HSDPA system has been designed to increase the system performance, the CQI coding method of the present invention, which exhibits the best system performance in simulation, can be the optimum CQI coding method for HS-DPCCH. COPYRIGHT: (C)2007,JPO&INPIT ...

Metal wiring layer and method of fabricating the same

A metal wiring layer and a method of fabricating the metal wiring layer are provided. The method includes forming a dielectric layer on a substrate, forming a plurality of dielectric layer patterns and holes therein on the substrate by etching part of the dielectric layer, with a cross sectional area of the holes in the dielectric layer patterns decreasing with increasing distance away from the substrate and the holes exposing the substrate, forming a trench by etching a portion of the substrate exposed through the holes in the dielectric layer patterns, and forming a metal layer which fills the trench and the holes in the dielectric layer patterns. Thus, it is possible to prevent the occurrence of an edge build-up phenomenon by forming a metal layer in a plurality of holes in the dielectric layer patterns having a cross sectional area decreasing with increasing distance away from the substrate. Therefore, it is possible to prevent the transmittance of a liquid crystal layer from decreasing ...

Thin film transistor array panel having improved storage capacitance and manufacturing method thereof

A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.

DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE HAVING THE SAME

A display substrate includes a gate line, a storage capacitor, a source line, a switching element, a pixel electrode, and a color filter. The gate line is formed on a base substrate. The storage capacitor has a storage line substantially parallel to the gate line. The source line crosses the gate line to define a pixel area. The switching element is connected to the gate line and the source line. The pixel electrode contacts the switching element. The color filter pattern is formed between the base substrate and the pixel electrode such that the color filter pattern contracts the base substrate and the pixel electrode. Thus, the color filter pattern is formed on the display substrate using a three-mask process.

DISPLAY SUBSTRATE, DISPLAY APPARATUS HAVING THE DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE DISPLAY APPARATUS

A display apparatus includes a first substrate, a gate line formed on the first substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line formed on the semiconductor layer and including a source electrode, a drain electrode facing the source electrode, a first electrode electrically connected to the drain electrode, in a second substrate facing the first substrate, a second electrode formed on the second substrate, and a liquid crystal layer disposed between the first electrode and the second electrode. At least one of the first and second electrodes includes a plurality of line patterns to polarize incident light.

Remote education via an internet

Remote education is provided via an internet which has been widely used as an information network. It has an open structure which is not influenced by particular hardware, or software such as an operating system or a web browser. A remote education provider can construct a remote education server with the minimum cost and time. Also, users easily connect to the remote education server via the internet to then receive a remote education service. The remote education server providing an educational program includes individual learning progress according to a learning evaluation and a performance management function, and performs a discriminative education according to capability of each individual.

SOLAR CELL MODULE AND METHOD OF MANUFACTURING THE SAME

A solar cell module includes an array substrate, a plurality of solar cells and a between-cell bus electrode. The solar cells are arranged to be adjacent to each other on the array substrate. Each of the solar cells includes a wire electrode. The bus electrode between the cells partially overlaps with each of adjacent solar cells and extends in a first direction, to be electrically connected to the wire electrode of each of the adjacent solar cells. Accordingly, the power efficiency of the solar cell module may be improved.

Thin film transistor array panel and method for manufacturing the same

A method for manufacturing a TFT array panel including forming a gate line having a gate electrode on a insulating layer, a gate insulating layer on the gate line, a semiconductor on the gate insulating layer, an ohmic contact on the semiconductor, a data line having a source electrode and a drain electrode apart form the source electrode on the ohmic contact, a passivation layer having a contact hole to expose the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole. The drain electrode and the source electrode are formed by a photolithography using a negative photoresist pattern. The negative photoresist pattern includes a first portion having a first thickness corresponding to a channel area, a second portion having a second thickness corresponding to a data line area, and a third portion having a third thickness corresponding to another area.

TRANSPARENT CONDUCTIVE LAYER AND METHOD OF MANUFACTURING THE SAME

A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.

Remote education method and apparatus via an internet

Display substrate, method of manufacturing the same and display device having the same

A display substrate includes a gate line, a storage capacitor, a source line, a switching element, a pixel electrode, and a color filter. The gate line is formed on a base substrate. The storage capacitor has a storage line substantially parallel to the gate line. The source line crosses the gate line to define a pixel area. The switching element is connected to the gate line and the source line. The pixel electrode contacts the switching element. The color filter pattern is formed between the base substrate and the pixel electrode such that the color filter pattern contracts the base substrate and the pixel electrode. Thus, the color filter pattern is formed on the display substrate using a three-mask process.

THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL

Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME

A solar cell is provided with a hetero-junction front structure (e.g., P/N or P/I/N) and is further provided in a back portion of thereof with a passivation layer having a plurality of openings defined therethrough. A BSF-forming binder material and a back face electrode are provided contacting the back surface and are fired to thereby bind the back face electrode to the structure and to form a BSF region extending from the openings of the passivation layer.

Thin film transistor array panel and manufacturing method thereof

A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the semiconductor layer; depositing a passivation layer on the data line and the drain electrode; forming a photoresist including a first portion and a second portion thinner than the first portion on the passivation layer; etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode at least in part; removing the second portion of the photoresist; depositing a conductive film; and removing the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

TFT substrate and display device having the same

A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer and a pixel electrode. The gate wiring includes a gate line and a gate electrode. The gate insulation layer is formed on the base substrate to cover the gate wiring. The activation layer is formed on the gate insulation layer. The oxidation-blocking layer is formed on the activation layer. The data wiring includes a data line, a source electrode and a drain electrode. The source and drain electrodes are disposed on the oxidation-blocking layer therefore lowering the on-current ("Ion") for turning on the TFT and increasing the off-current ("Ioff") for turning off the TFT due to the oxidation-blocking layer.

THIN FILM TRANSISTOR PANEL AND MANUFACTURING METHOD OF THE SAME

A thin film transistor array panel includes a gate line formed on a substrate and including a gate electrode, a semiconductor layer formed on a surface of the substrate having the gate line, a data line formed on the semiconductor layer, insulatedly intersecting the gate line, and including a source electrode disposed on the gate electrode, a drain electrode separated from the source electrode by a channel, disposed on the gate electrode, and formed from the same layer as the data line, a passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode, and a pixel electrode formed on the passivation layer and contacting the drain electrode through the first contact hole. The data line and the drain electrode may include a first layer and a second layer formed on the first layer, a planar edge of the first layer protrudes from a planar edge of the second layer, and the first layer is formed by dry-etching and the second layer ...

SOLAR CELL AND MANUFACTURING METHOD THEREOF

A method for manufacturing a solar cell is provided. The manufacturing method includes: depositing a transparent conductive layer on a substrate; patterning the transparent conductive layer; forming a semiconductor layer including deposited on the patterned transparent conductive layer; patterning the semiconductor layer; coating a metal powder on the patterned semiconductor layer; forming a rear electrode layer on the semiconductor layer coated with the metal powder; and patterning the rear electrode layer and the semiconductor layer. This method is useful for producing a solar cell with improved light absorption efficiency.

THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND ELECTRO-LUMINESCENCE DISPLAY PANEL HAVING THE SAME

A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.

Method of manufacturing a display substrate

A method of manufacturing a display substrate includes forming a first metallic pattern including gate and storage conductors and a gate electrode of a switching device on a base substrate, forming a gate insulation layer, forming a second metallic pattern and a channel portion including a source line, source and drain electrodes of the switching device, forming a passivation layer and a photoresist film on the second metallic pattern, patterning the photoresist film to form a first pattern portion corresponding to the gate and source conductors and the switching device, and a second pattern portion formed on the storage line, etching the passivation layer and the gate insulation layer, and forming a pixel electrode using the first pattern portion. Therefore, excessive etching of the stepped portion may be prevented, so that a short-circuit defect between a metallic pattern and a pixel electrode may be prevented.

DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.

Method for manufacturing a display panel

Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

THIN FILM TRANSISTOR ARRAY PANEL AND FABRICATION

The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.

METHOD FOR MANUFACTURING PHOTOELECTRIC ELEMENT

PROBLEM TO BE SOLVED: To provide a method for manufacturing a photo-electric element with its improved photo-electric converting efficiency. SOLUTION: In the method for manufacturing the photo-electric element, a first protrusion is formed on the incidence plane of a semiconductor substrate with a monocrystal silicon included therein, and a second protrusion is formed on the surface of the first protrusion. The incidence plane of the first protrusion is formed by wet etching, and the second protrusion is formed by dry etching on the surface of the first protrusion. Accordingly, the light from outside onto the semiconductor substrate is scattered on the incidence plane, to increase the passage of the light inside the semiconductor substrate, thereby improving the photoelectric converting efficiency. COPYRIGHT: (C)2010,JPO&INPIT ...

CQI-CODIERUNGSVERFAHREN FÜR HS-DPCCH

THIN FILM TRANSISTOR INDICATING PANEL AND MANUFACTURING METHOD OF SAME

PROBLEM TO BE SOLVED: To simplify a manufacturing process of a thin film transistor (TFT) indicating panel for decreasing a manufacturing time and costs. SOLUTION: The manufacturing method of the TFT indicating panel according to one feature of the invention comprises a step for forming a gate line on a substrate, a step for forming a gate insulating film on the gate line, a step for forming a semiconductor layer on the gate insulating film, a step for forming a data line and a drain electrode on the semiconductor layer, a step for laminating a protective film on the data line and a drain electrode, a step for forming a photosensitive film containing a first portion having a predetermined thickness and a second portion thinner than the predetermined thickness of the first portion on the protective film, a step for etching the protective film with the photosensitive film as a mask to expose at least a part of the drain electrode, a step for removing the second portion of the photosensitive ...

THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND ELECTRO-LUMINESCENCE DISPLAY PANEL HAVING THE SAME

A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.

PHOTOELECTRIC DEVICE

A photoelectric device that reduces optical loss, reduces recombination loss of carriers, and can be manufactured by using a simplified process is provided. The photoelectric device includes a semiconductor substrate, a first semiconductor stack on a first surface of the semiconductor substrate and having a first conductivity, and a second semiconductor stack on the first surface of the semiconductor substrate and having a second conductivity opposite to the first conductivity. Edge portions of the first and second semiconductor stacks face each other with an insulating portion therebetween. 1. A photoelectric device comprising:a semiconductor substrate;a first semiconductor stack on a first surface of the semiconductor substrate and having a first conductivity; anda second semiconductor stack on the first surface of the semiconductor substrate and having a second conductivity opposite to the first conductivity,wherein edge portions of the first and second semiconductor stacks face each other with an insulating portion therebetween.2. The photoelectric device of claim 1 , wherein the first semiconductor stack constitutes a base for collecting major carriers and the second semiconductor stack constitutes an emitter for collecting minor carriers.3. The photoelectric device of claim 2 , wherein the edge portion of the first semiconductor stack claim 2 , the insulating portion claim 2 , and the edge portion of the second semiconductor stack are stacked sequentially from the semiconductor substrate.4. The photoelectric device of claim 1 , wherein the edge portions of the first and second semiconductor stacks are vertically separated from each other by a first height.5. The photoelectric device of claim 1 , whereinthe edge portion of the second semiconductor stack is supported on the insulation portion, andan edge surface of the second semiconductor stack and an edge surface of the insulating portion are aligned with each other.6. The photoelectric device of claim 1 , ...

THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF

A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

Image sensor and method of correction output signal of the image sensor

A pixel array includes an array of pixels to receive light, a first pixel to be blocked from receiving the light, and a circuit to adjust signals output from pixels in the array based on a signal from the first pixel. The signals output from the pixels in the array include a first error value. The circuit reduces the first error value in the signals from the pixels in the array based on the signal from the first pixel. The circuit may also reduce a second error value in the signals output from the pixels in the array based on a signal from a second pixel. The first and second pixels may be outside of the pixel array. The first and second error values may be storage diode leakage value and a dark current value.

Method for forming contact hole and method for fabricating thin film transistor plate using the same

A method for forming a contact hole includes forming a conductive layer on a substrate, patterning the conductive layer to form a wiring, forming an insulating layer on the wiring and the substrate through a low temperature process, and dry etching the insulating layer using an anoxic gas to expose the wiring.

Thin film transistor, and display apparatus having the same

A method of fabricating a thin film transistor includes forming a gate electrode on a substrate, forming a semiconductor layer on the gate electrode, forming a source electrode on the semiconductor layer, forming a drain electrode on the semiconductor layer spaced apart from the source electrode, forming a copper layer pattern on the source electrode and the drain electrode, exposing the copper layer pattern on the source electrode and the drain electrode to a fluorine-containing process gas to form a copper fluoride layer pattern thereon, and patterning the semiconductor layer.

Signal transmission method of closed-loop MIMO system

A closed-loop MIMO system includes a receiver for forming a new predefined set by using elements of a previous predefined set, selecting a certain matrix of the new predefined set, and feeding back an index of the matrix, if the number of transmit antennas increases, and a transmitter for performing signal transmission by multiplying the matrix of the fedback index to a transmission signal. Although the number of transmit antennas increases, candidate matrices can be simply obtained by using candidate matrices of a previous set. Moreover, by proposing a reference for selecting an optimal solution with a small amount of calculation, burden on a system can be considerably reduced.

METHOD FOR FORMING METAL LINE AND METHOD FOR MANUFACTURING DISPLAY SUBSTRATE BY USING THE SAME

In a method for forming a metal line, a first metal layer and a second metal layer are deposited on a substrate. The first metal layer includes aluminum, and the second metal layer includes molybdenum. A photoresist pattern having a line-shape is formed on the second metal layer. The second metal layer is etched with a chlorine-containing etching gas using the photoresist pattern as a mask. The first metal layer is then etched with a mixture of a chlorine-containing gas and nitrogen gas and/or a mixture of a chlorine-containing gas and argon gas as an etching gas. Impurities such as chlorine ions are removed from the base substrate after etching the first metal layer with a fluorine-containing gas, hydrogen gas, or water vapor. A method for manufacturing a display substrate is disclosed using the method for forming a metal line to form source, drain, and gate electrodes and gate lines.

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To enhance photoconversion efficiency by forming a first impurity layer where only a part in contact with a first electrode is formed at high concentration and a remaining part is formed at relatively low concentration. SOLUTION: The solar cell 1000 includes: a semiconductor substrate 100, where an uneven pattern 110 is formed on at least one surface; first impurity layers 210, 220 formed on the uneven pattern, the first impurity layer including a first part having a first concentration and a second part having a second concentration higher than the first concentration; and a first electrode 400 formed at a position in contact with the second part 220 of the first impurity layer but not the first part 210 of the first impurity layer. COPYRIGHT: (C)2010,JPO&INPIT ...

Method of encoding/decoding using low density check code matrix

Thin film transistor array panel and method of manufacturing thereof

In one embodiment, a thin film transistor array display panel and method of manufacturing the same are provided. A method includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact layer on the gate line; forming a data layer on the ohmic contact layer; forming a photosensitive pattern on the data layer; etching the data layer to form a data line including a source electrode and a drain electrode that is opposite to the source electrode; reflowing the photosensitive pattern to cover side surfaces of the source electrode and the drain electrode; and etching the ohmic contact layer using the reflowed photosensitive pattern as a mask.

Solar cell and method of fabricating the same

A solar cell includes: a semiconductor substrate having a first surface and a second surface opposite the first surface; uneven patterns disposed on at least one of the first surface and the second surface of the semiconductor substrate; a first impurity layer disposed on the uneven patterns and which includes a first part having a first doping concentration and a second part having a second doping concentration greater than the first doping concentration; and a first electrode which contacts the second part of the first impurity layer and does not contact the first part of the first impurity layer.

Display panel and method of manufacturing the same

In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.

Method of manufacturing thin film transistor substrate

A method of manufacturing a TFT substrate includes: sequentially forming a transparent conductive layer and an opaque conductive layer on a substrate, patterning the transparent conductive layer and the opaque conductive layer by using a first mask to form a gate pattern including a pixel electrode, and forming a gate insulating layer and a semiconductor layer above the substrate. A contact hole is formed which exposes a portion of the pixel electrode and a semiconductor pattern using a second mask. A conductive layer is formed above the substrate and patterned to form a source/drain pattern including a drain electrode which overlaps a portion of the pixel electrode. Portions of the gate insulating layer and the opaque conductive layer above the pixel electrode are removed except a portion overlapping the drain electrode, by using a third mask.

FENSTER-INTEGRIERTER OPTISCHER FILTER FÜR LIDAR

Offenbart ist ein Fenster-integrierter optischer Filter für LiDAR (Light Detection and Ranging), der aufweist: ein Fenster, das Polymermaterial zum Absorbieren eines sichtbaren Lichtbandes und Durchlassen eines Nahinfrarotbandes aufweist; und eine obere reflektierende Schicht und eine untere reflektierende Schicht auf der oberen Fläche und der unteren Fläche des Fensters. Die obere reflektierende Schicht und die untere reflektierende Schicht können in einem Dünnfilm ausgebildet sein, der Titandioxid (TiO2) und Siliziumdioxid (SiO2) aufweist.

Antenna switching method and method for transmitting and receiving signals for the same

Thin film transistor, method of manufacturing the same, display apparatus having the same and method of manufacturing the display apparatus

A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the gate electrode and overlaying the gate electrode as well as first and second conductive adhesive patterns formed on the semiconductor pattern and spaced apart from each other. The source electrode includes a first barrier pattern, a source pattern and a first capping pattern sequentially formed on the first conductive adhesive pattern. The drain electrode includes a second barrier pattern, a drain pattern and a second capping pattern sequentially formed on the second conductive adhesive pattern. Etched portions of the first and second conductive adhesive patterns have a substantially vertical profile to prevent the exposure of the source and drain electrodes, thereby improving the characteristics of the thin film transistor.

Thin-film transistor display panel and manufacturing method thereof

A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.

Apparatus and method for decoding using channel code

A method of encoding data using low density parity check (LDPC) code defined by a mxn parity check matrix is disclosed. More specifically, the method includes encoding input source data using the parity check matrix, wherein the parity check matrix comprises a plurality of zxz sub-matrices of which row weights and column weights are '0' or '1 '.

Image sensor and method of correcting output signal of the image sensor based on signals from different pixel rows

A method of processing signals from an image sensor outputting signals from rows of pixels in the image sensor having optical signals, outputting signals from rows of pixels in the image sensor not having optical signals, and correcting the signals from the rows of pixels having optical signals based on the signals corresponding to the rows of pixels not having optical signals.

SOLAR CELL

A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate. 21. A solar cell comprising:a semiconductor substrate having a first conductive type and comprising a front surface and a back surface;a first intrinsic semiconductor layer over the front surface of the semiconductor substrate;a plurality of first semiconductor layers comprising a first layer on a back surface of the first intrinsic semiconductor layer and a second layer on a front surface of the first intrinsic semiconductor layer;a passivation layer on the back surface of the semiconductor substrate, the passivation layer having first and second openings that expose the back surface of the semiconductor substrate;a second semiconductor layer of a second conductivity type disposed inside the first opening;a second intrinsic semiconductor layer inside the first opening between the second semiconductor layer and the semiconductor substrate and between the second semiconductor layer and the passivation layer;a third semiconductor layer of the first conductive type disposed inside the second opening, the third semiconductor layer being spaced apart from the second semiconductor layer; anda third intrinsic semiconductor layer inside the second opening between the third semiconductor layer and ...

Manufacturing thin film transistor array panels for flat panel displays

A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 m to less than 4 m. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility.

SHARED PIXEL AND AN IMAGE SENSOR INCLUDING THE SAME

A shared pixel includes a plurality of photo diode regions, a shared floating diffusion region, a plurality of transfer gates and a blooming layer. Each of the photo diode regions generates photo-charges in response to incident light. The photo diode regions are formed in a semiconductor substrate. The shared floating diffusion region is shared by the plurality of photo diode regions. The shared floating diffusion region is separated from the plurality of photo diode regions in the semiconductor substrate. Each of the transfer gates transfers the photo-charges of a corresponding photo diode region to the shared floating diffusion region in response to a transfer control signal. The blooming layer transfers overflow photo-charges to a power supply voltage node. 1. A shared pixel , comprising:a plurality of photo diode regions each configured to generate photo-charges in response to incident light, wherein the plurality of photo diode regions are formed in a semiconductor substrate;a shared floating diffusion region that is shared by the plurality of photo diode regions, wherein the shared floating diffusion region is separated from the plurality of photo diode regions in the semiconductor substrate;a plurality of transfer gates each configured to transfer the photo-charges of a corresponding photo diode region to the shared floating diffusion region in response to a transfer control signal; anda first blooming layer configured to transfer overflow photo-charges to a power supply voltage node, wherein a number of the overflow photo-charges is a difference between a number of the photo-charges generated by one of the photo diode regions and a reference photo-charge number.2. The shared pixel of claim 1 , wherein a potential of a blooming barrier between one of the photo diode regions and the power supply voltage node is less than a potential of a transfer barrier between the one of the photo diode regions and the shared floating diffusion region.3. The shared pixel of ...

Thin film transistor array panel and manufacturing method thereof

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

In a display apparatus and a method of manufacturing the display apparatus, a first insulating layer having a trench and a second insulating layer having a via hole corresponding to the trench are formed on an array substrate. After forming a seed layer in the trench, a conductive layer is formed on the seed layer through a plating process, thereby forming the gate line, the gate electrode and the storage line accommodated in the trench and the via hole.

Panel for flexible display device and manufacturing method thereof

A flexible display panel according to an embodiment of the present invention includes a flexible substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the substrate, a semiconductor layer formed on the gate insulating layer and disposed substantially on the entire gate electrode, a source electrode and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The patterning of the semiconductor layer to form a second semiconductor member may include coating a photoresist film on a first semiconductor member, exposing the photoresist film to light from a back of the substrate, wherein the gate electrode is used as a light blocking mask, developing the exposed photoresist film to form a photoresist pattern having the same planar size as the gate electrode, and etching the semiconductor layer using the photoresist pattern as an etching mask.

Thin film transistor array panel and fabrication

The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.

Thin film transistor array panel and method for manufacturing the same

The present invention relates to a thin film transistor array panel and a manufacturing method thereof. The thin film transistor array panel according to the present invention includes a substrate, a light blocking member formed on the substrate, a gate line disposed on the light blocking member. The gate line and the light blocking member define a closed region A color filter is formed in the closed region and contacts the side surface of the gate line. A gate insulating layer is formed on the gate line and the color filter, a data line and a drain electrode are formed on the gate insulating layer, and a pixel electrode is connected to the drain electrode.

Image sensor

Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device, which is formed in the semiconductor layer near the first surface and accumulates charges based on light incident via the second surface; a charge storage device, which is formed in the semiconductor layer near the first surface and temporarily stores charges accumulated by the photosensitive device; a first transmission transistor, which transmits charges accumulated by the photosensitive device to the charge storage device and includes a first gate formed on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region, which is formed in the semiconductor layer near the second surface, is apart from the charge storage device, and is arranged above the charge storage device.

PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME

In one or more embodiments of a photovoltaic device and a method of manufacturing the photovoltaic device, a first conductive layer, a first light-absorbing layer and a second conductive layer may be formed on a substrate, in sequence. A temperature for forming the second conductive layer may be lower than a temperature for forming the first conductive layer and a temperature for forming the first light-absorbing layer.

Method of manufacturing a display substrate

A method of manufacturing a display substrate includes forming a first metallic pattern including gate and storage conductors and a gate electrode of a switching device on a base substrate, forming a gate insulation layer, forming a second metallic pattern and a channel portion including a source line, source and drain electrodes of the switching device, forming a passivation layer and a photoresist film on the second metallic pattern, patterning the photoresist film to form a first pattern portion corresponding to the gate and source conductors and the switching device, and a second pattern portion formed on the storage line, etching the passivation layer and the gate insulation layer, and forming a pixel electrode using the first pattern portion. Therefore, excessive etching of the stepped portion may be prevented, so that a short-circuit defect between a metallic pattern and a pixel electrode may be prevented

Plasma apparatus

The present invention relates to a plasma apparatus comprising a reaction chamber having a reaction space in which accommodates a substrate to be treated; a coil located on the outside of the reaction space; a power source impressingapplying a highalternating frequency power on the coil; and a conducting plate located between the coil and the reaction space and generating an induced current from the highalternating frequency power impressedapplied on the coil. Thus, the present invention provides aplasma apparatus that impress induces a uniform electric field in an internal gas of the reaction chamber.

Method of producing thin film transistor substrate

A method of producing a thin film transistor substrate to prevent an interconnection from being corroded during a dry etching process includes sequentially forming on an insulating substrate a gate interconnection, a gate insulating layer, an active layer, a conductive layer for a data interconnection, and a photoresist pattern including a first region and a second region, etching the conductive layer for the data interconnection using the photoresist pattern as an etching mask to form a conductive layer pattern for source/drain electrodes, etching the active layer using the photoresist pattern as the etching mask to form an active layer pattern, removing the second region of the photoresist pattern, dry etching the conductive layer pattern for the source/drain electrodes under the second region using the photoresist pattern as the etching mask and etching gas, etching a portion of the active layer pattern using the photoresist pattern as the etching mask, and physically removing the reaction ...

Image sensor for stabilizing a black level

An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.

Image sensors and related methods and electronic devices

An image sensor is provided including a pixel array, a correlated double sampling (CDS) unit, an analog-digital converting (ADC) unit, a control unit, and an overflow power voltage control unit. The pixel array includes at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and outputs an analog signal based on the accumulated charges in a readout period. The CDS unit generates an image signal by performing a CDS operation on the analog signal. An ADC unit converts the image signal into a digital signal. A control unit controls the pixel array, the CDS unit, and the ADC unit. An overflow power voltage control unit controls an overflow power voltage to have a low voltage level in the photoelectric conversion period and controls the overflow power voltage to have a high voltage level in the readout period.

Method and apparatus for selecting modulation and coding scheme (mcs) index based on frequency selectivity

A method of selecting a modulation and coding scheme (MCS) index in a wireless communication system is disclosed. More specifically, the method includes measuring a frequency selectivity of a receiving channel, selecting a MCS index having a coding rate below a prescribed coding rate threshold value if the measured frequency selectivity is greater than or equal to a specified frequency selectivity threshold, and selecting the MCS index having the coding rate above or equal to the prescribed coding rate threshold value if the measured frequency selectivity is less than the specified frequency selectivity threshold.

DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

A display substrate having a low-resistance metallic layer and a method of manufacturing the display substrate. The gate conductors are extended in a first direction. The source conductors are extended in a second direction crossing the first direction including a lower layer of molybdenum or a molybdenum alloy, and an upper layer of aluminum or an aluminum alloy. The pixel areas are defined by the gate conductors and the source conductors. A switching element is formed in each of the pixel areas and includes a gate electrode extended from the gate conductor and a source electrode extended from the source conductor. The pixel electrode includes a transparent conductive material, and is electrically connected to a drain electrode of the switching element.

Method of encoding and decoding using low density parity check code

Method for transmitting signals for achieving diversity gain

A method for transmitting signals for achieving diversity gain is provided. In a communication system having multiple independent transmission paths, a signal is transmitted by mapping it to different independent transmission paths at initial transmission and at retransmission, thereby obtaining diversity gain. Especially, real and ideal components of a transmission signal are mapped to differenttransmission paths, thereby obtaining additional gain.

Photovoltaic device including gap passivation layer and method of manufacturing the same

A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

Image sensor and method of manufacturing the same

Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.

METHOD OF FORMING A METAL LINE AND METHOD OF MANUFACTURING DISPLAY SUBSTRATE HAVING THE SAME

A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is formed on the second metal layer. The first and second metal layers are dry-etched using etching gas and the photoresist pattern as an etching mask. An etching material is removed from the base substrate, to prevent corrosion of the dry-etched first metal layer. Therefore, the source metal pattern without corrosion may be formed through a dry-etching process so that a manufacturing cost is decreased.

Method of driving an image sensor, image sensor employing the same, and portable electronic device including the same

An image sensor includes a pixel array including at least one unit pixel configured to generate accumulated charges, a correlated double sampler configured to perform a correlated double sampling operation to extract an effective signal component based on a signal component and a reset component from the unit pixel for at least first and second read-out periods, the correlated double sampler configured to read out an image signal during the first read-out period and to read out a light noise signal during the second read-out period, an analog-digital converter configured to convert the image signal into a first digital signal and to convert the light noise signal into a second digital signal and an image compensator configured to generate a compensated image signal based on the second digital signal and the first digital signal.

Thin film transistor array panel and manufacturing method thereof

A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.

Thin film transistor and method for manufacturing a display panel

Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL

Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

SOLAR CELL AND METHOD FOR MANUFACTURING THE SOLAR CELL

An exemplary embodiment of the present invention provides a method for manufacturing a solar cell, which includes: forming a first semiconductor layer on a first surface of a light-absorbing layer, forming a second semiconductor layer on a second surface of the light-absorbing layer, forming a first transparent conductive layer having one X-ray diffraction peak on the first semiconductor layer in a first direction, forming a second transparent conductive layer having one X-ray diffraction peak on the second semiconductor layer in a second direction opposite to the first direction, forming a first electrode on the first transparent conductive layer in the first direction and forming a second electrode on the second transparent conductive layer in the second direction, in which at least one of the first transparent conductive layer and the second transparent conductive layer is formed at about 180 to about 220° C., at least one of the first transparent conductive layer and the second transparent ...

Thin film transistor array panel and manufacturing method thereof

Linear-logarithmic image sensors and electronic devices including the same

A linear-logarithmic image sensor includes a pixel array, a signal generation unit, and a control unit. The pixel array includes at least one unit pixel that generates a leakage signal corresponding to leakage photo-charges and that sequentially generates a first analog signal corresponding to a portion of accumulated photo-charges and a second analog signal corresponding to a whole of the accumulated photo-charges by resetting a floating diffusion node and transferring the accumulated photo-charges from a storage node to the floating diffusion node in response to first and second transfer control signals that are sequentially activated. The signal generation unit includes at least one signal generation block that generates a final analog signal based on the leakage signal, the first analog signal, and the second analog signal. The control unit controls the pixel array and the signal generation unit.

Solar cell

A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

THIN FILM TRANSISTOR DISPLAY PLATE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To secure characteristics of a thin film transistor by reducing contamination by metal residues, regarding a thin film transistor display plate and a manufacturing method of the same. SOLUTION: A manufacturing method of a thin film transistor display plate of the present invention comprises the steps of: forming a gate line on a substrate; sequentially forming a gate insulating film, a semiconductor layer, and an ohmic contact layer on the gate line; forming a data layer on the ohmic contact layer; forming a photosensitive pattern on the data layer; etching the data layer and forming a data line including a source electrode and a drain electrode facing the source electrode; reflowing the photosensitive film pattern so as to cover the side faces of the source electrode and the drain electrode; and etching the ohmic contact layer, with the reflowed photosensitive pattern as a mask. COPYRIGHT: (C)2007,JPO&INPIT ...

Thin film transistor array panel and manufacturing method thereof

A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

Antenna switching method and method for transmitting and receiving signals for the same

A closed-loop antenna switching method, a reference signal allocating method, and a feedback signal transmitting method for the same are disclosed. Namely, by transmitting a reference signal via the plurality of transmitting antennas via the antenna switching for reference signal transmission for each prescribed multiple period of an antenna selection period, efficient antenna index information can be fed back. By setting an antenna switching period to a prescribed multiple of an antenna selection period, it is able to prevent power loss and data decoding performance degradation. And, the present invention includes transmitting a sounding reference signal (SRS) for each band selection period via at least one of the plurality of transmitting antennas and transmitting at least one data demodulation reference signal (DMRS) between the band selection periods via an antenna for not transmitting data by reference signal transmission antenna switching.

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

A solar cell includes a semiconductor substrate including a first conductive type, a first amorphous silicon thin film layer disposed on the semiconductor substrate and a second amorphous silicon thin film layer including a second conductive type and disposed on the first amorphous silicon thin film layer. The first amorphous silicon thin film layer includes a first intrinsic silicon thin film layer, a second intrinsic silicon thin film layer facing the semiconductor substrate while interposing the first intrinsic silicon thin film layer therebetween and a first low concentration silicon thin film layer including the second conductive type and disposed between the first intrinsic silicon thin film layer and the second intrinsic silicon thin film layer. 1. A solar cell comprising:a semiconductor substrate including a first conductive type;a first amorphous silicon thin film layer disposed on the semiconductor substrate;a second amorphous silicon thin film layer including a second conductive type and disposed on the first amorphous silicon thin film layer, a first intrinsic silicon thin film layer;', 'a second intrinsic silicon thin film layer facing the semiconductor substrate while interposing the first intrinsic silicon thin film layer therebetween; and', 'a first low concentration silicon thin film layer including the second conductive type and disposed between the first intrinsic silicon thin film layer and the second intrinsic silicon thin film layer., 'wherein the first amorphous silicon thin film layer comprises2. The solar cell of claim 1 , further comprising:a third amorphous silicon thin film layer facing the first amorphous silicon thin film while interposing the semiconductor substrate therebetween; anda fourth amorphous silicon thin film layer including the first conductive type and facing the semiconductor substrate while interposing the third amorphous silicon thin film layer therebetween, and a third intrinsic silicon thin film layer;', 'a fourth ...

METHOD AND APPARATUS OF ENCODING AND DECODING DATA USING LOW DENSITY PARITY CHECK CODE IN A WIRELESS COMMUNICATION SYSTEM

A method of encoding data using low density parity check (LDPC) code defined by a m×n parity check matrix is disclosed. More specifically, the method includes encoding input source data using the parity check matrix, wherein the parity check matrix comprises a plurality of z×z sub-matrices of which row weights and column weights are ‘0’ or ‘1’. 191-. (canceled)93. The apparatus of claim 92 , wherein the encoder comprising:a memory module for storing the first base matrix;{'sub': 'max', 'a base matrix generation module for generating a second base matrix by replacing each first value corresponding to each element of the first base matrix with a second value corresponding to each element of the second base matrix, the second value an integer that indicates either a zero matrix or a second permutation matrix having a z×z size, wherein z is smaller than z;'}a parity check matrix generation module for generating the parity check matrix by replacing each second value of the second base matrix with a corresponding second permutation matrix or the zero matrix having the z×z size; andan encoding module for encoding the input data using the parity check matrix.94. The apparatus of claim 93 , wherein:the second value is either a non-negative integer or “−1;” and means for replacing each second value of “−1” with the zero matrix having the z×z size;', 'means for replacing each second value of a positive integer with a second permutation matrix having the z×z size, the second permutation matrix altered from an identity matrix having the z×z size according to the positive integer; and', 'means for replacing each second value of a zero with a second permutation matrix that is the identity matrix having the z×z size., 'the parity check matrix generation module comprises95. The apparatus of claim 94 , wherein the second permutation matrix is altered by circular shifting either each entire row or each entire column of the identity matrix a number of intervals equal to the positive ...

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

The solar cell includes a substrate, a semiconductor layer, a first doped pattern and a second doped pattern. The substrate has a first surface adapted to receive solar light and a second surface opposite to the first surface. The semiconductor layer includes an insulating pattern formed on a first area of the second surface of the substrate and a semiconductor pattern formed on a second area of the second surface of the substrate in which the insulating pattern is not formed. The first doped pattern and the second doped pattern are formed either in or on the semiconductor pattern. 1. A solar cell comprising:a substrate having a first surface adapted to receive solar light and a second surface opposite to the first surface;a semiconductor layer comprising an insulating pattern formed on a first area of the second surface of the substrate and a semiconductor pattern formed on a second area of the second surface of the substrate in which the insulating pattern is not formed; anda first doped pattern and a second doped pattern formed either in or on the semiconductor pattern.2. The solar cell of claim 1 , wherein the semiconductor layer has a thickness between about 100 Å and about 200 Å claim 1 ,the semiconductor pattern comprises a first semiconductor pattern and a second semiconductor pattern spaced apart from the first semiconductor pattern,the first doped pattern is formed in the first semiconductor pattern, and the second doped pattern is formed in the second semiconductor pattern.3. The solar cell of claim 1 , wherein the semiconductor layer has a thickness between about 50 Å and about 100 Å claim 1 ,the semiconductor pattern comprises a first semiconductor pattern and a second semiconductor pattern spaced apart from the first semiconductor pattern,the first doped pattern is formed on the first semiconductor pattern, and the second doped pattern is formed on the second semiconductor pattern.4. A method of manufacturing a solar cell claim 1 , the method ...

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

A solar cell and a method of manufacturing the solar cell, the solar cell including a first surface configured to receive incident sunlight and having a concavo-convex pattern, a substantially flat second surface opposite to the first surface, a first doped layer formed as a crystalline silicon layer having a first dopant, and a second doped layer formed as an amorphous silicon layer having a second dopant. The processes for forming these layers, with the exception of forming the first doped layer, are performed at a low temperature. Accordingly, reflectivity of sunlight may be minimized, a high terminal voltage may be generated, and a wafer including the solar cell can be kept from being bent. 1. A solar cell comprising:a base substrate including a first surface configured to receive incident sunlight, and a second surface opposite to the first surface;a first doped layer formed on the second surface, and including a first dopant;a second doped layer formed on the first surface, and including a second dopant;a first transparent conductive layer formed on the second doped layer;a first electrode formed on the first doped layer; anda second electrode formed on the first transparent conductive layer.2. The solar cell of claim 1 , wherein the first surface comprises a concavo-convex pattern claim 1 , and the second surface is substantially flat.3. The solar cell of claim 1 , wherein the base substrate includes crystalline silicon (c-Si) claim 1 , and the second doped layer includes at least one of amorphous silicon (a-Si) claim 1 , amorphous silicon carbide (a-SiC) and amorphous silicon germanium (a-SiGe).4. The solar cell of claim 3 , wherein the first doped layer is formed via a diffusion method.5. The solar cell of claim 1 , further comprising:a passivation layer positioned between the second surface of the base substrate and the second doped later, the passivation layer including an intrinsic semiconductor.6. The solar cell of claim 1 , wherein a thickness of the ...

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

A solar cell includes a base substrate having a first surface and a second surface opposite the first surface, the base substrate including a crystalline semiconductor and being configured to have solar light incident on the first surface, a doping pattern on a first portion of the second surface, the doping pattern including a first dopant, a first doping layer on a second portion of the second surface, the first doping layer including a second dopant, and the first and second portions of the second surface being different from each other, a first electrode on the first doping layer, and a second electrode on the doping pattern. 1. A solar cell , comprising:a base substrate having a first surface and a second surface opposite the first surface, the base substrate including a crystalline semiconductor and being configured to have solar light incident on the first surface;a doping pattern on a first portion of the second surface, the doping pattern including a first dopant;a first doping layer on a second portion of the second surface, the first doping layer including a second dopant, and the first and second portions of the second surface being different from each other;a first electrode on the first doping layer; anda second electrode on the doping pattern.2. The solar cell as claimed in claim 1 , wherein the first doping layer has a thickness of about 30 Å to about 500 Å.3. The solar cell as claimed in claim 1 , further comprising a transparent conductive layer between the first doping layer and the first electrode and electrically connecting the first doping layer and the first electrode.4. The solar cell as claimed in claim 3 , wherein the transparent conductive layer has a thickness of about 200 Å to about 1000 Å.5. The solar cell as claimed in claim 1 , further comprising a first passivation layer between the first doping layer and the second portion of the second surface.6. The solar cell as claimed in claim 5 , wherein the first passivation layer has a ...

PHOTOVOLTAIC DEVICE

A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells. 119.-. (canceled)20. A photovoltaic device , comprising:a first cell comprising a lower first conductive layer, a first light absorption layer, and an upper second conductive layer sequentially deposited on a substrate; anda second cell neighboring the first cell, and comprising a lower second conductive layer, a second light absorption layer, and an upper first conductive layer sequentially deposited on the substrate,wherein the first light absorption layer and the second light absorption layer are formed at the same layer and are connected to each other.21. The photovoltaic device of claim 20 , whereinthe lower first conductive layer of the first cell and the lower second conductive layer of the second cell are separated from each other.22. The photovoltaic device of claim 21 , whereinthe upper second conductive layer of the first cell and the upper first conductive layer of the second cell are formed with the same layer as the first and second light absorption layer, and are electrically disconnected from each other.23. The photovoltaic device of claim 22 , further comprisinga depletion region formed between the upper second conductive layer of the first cell and the upper first conductive layer of the second cell.24. The photovoltaic device of claim 23 , further comprisingan electrode portion formed between the upper second conductive ...

Method of manufacturing a photovoltaic device

A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells. 131.-. (canceled)32. A method for manufacturing a photovoltaic device , comprising:forming a lower first conductive layer and a lower second conductive layer on a substrate;forming a light absorption layer on the lower first conductive layer and the lower second conductive layer;forming an upper first conductive layer and an upper second conductive layer on the light absorption layer;forming an upper electrode on the upper first conductive layer and the upper second conductive layer; andpatterning the upper electrode layer, the upper first conductive layer, the upper second conductive layer, and the light absorption layer to form a first cell and a second cell thereby forming a pair of cells connected by the upper electrode layer.3332. The method of , further comprisingforming a lower electrode on the substrate before forming the lower first conductive layer and the lower second conductive layer on the substrate.34. The method of claim 33 , whereinthe pair of cells comprising the first cell and the second cell are connected by the lower electrode.35. The method of claim 34 , whereina depletion region is formed with the same layer as the lower first conductive layer and the lower second conductive layer between the pair of cells comprising the first cell and the second cell.36. The method of claim 32 , whereinthe forming of the lower first ...

IMAGE SENSOR APPARATUS USING SHADED PHOTODETECTOR FOR TIME OF FLIGHT DETERMINATION

A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle. 1. A unit pixel for an image sensor comprising:an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current;an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current;a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source; andan initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.2. The unit pixel of claim 1 , wherein the light source corresponds to an optical pulse emission device claim 1 , and the light signal corresponds to an optical pulse.3. The unit pixel of claim 2 , wherein the accumulation circuit includes:a photodiode configured to generate the dark current when being optically shaded.4. The unit pixel of claim 3 , wherein the photodiode is maintained at ...

APPARATUS AND METHOD FOR INTEGRALLY MANAGING MAINTENANCE OF ELECTRONIC DEVICES

An apparatus and a method for integrally managing maintenance of a plurality of electronic devices are provided, where the device management system includes a server that stores maintenance packages; a plurality of electronic devices that execute maintenance; and a device management apparatus that acquires a plurality of maintenance packages with respect to the plurality of electronic devices from the server, generates a general maintenance schedule including at least one maintenance execution time with reference to the plurality of maintenance packages, and executes maintenance of an electronic device from among the plurality of electronic devices corresponding to the at least one maintenance execution time, when the at least one maintenance execution time arrives. 1. A method for integrally managing maintenance of a plurality of electronic devices by a device management apparatus , the method comprising:acquiring, by the device management apparatus, a plurality of maintenance packages for the plurality of electronic devices;generating a general maintenance schedule including at least one maintenance execution time with reference to the plurality of maintenance packages; andupon arrival of the at least one maintenance execution time, transmitting a maintenance package and a maintenance control signal to a corresponding electronic device from among the plurality of electronic devices according to the general maintenance schedule.2. The method of claim 1 , wherein generating the general maintenance schedule comprises:calculating driving patterns of the plurality of electronic devices corresponding to the plurality of maintenance packages and required maintenance times of the plurality of maintenance packages;determining possible maintenance times based on the calculated driving patterns and the required maintenance times; andgenerating the general maintenance schedule based on the possible maintenance times.3. The method of claim 1 , further comprising:transmitting a ...

IMAGE SENSOR FOR STABILIZING A BLACK LEVEL

An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region. 1. An image sensor comprising:first pixels which are formed in an active region of a semiconductor substrate and configured to measure photo-charges corresponding to incident light;second pixels which are formed in an optical-black region of the semiconductor substrate and configured to measure black levels; anda deep trench which is formed substantially vertically, with respect to an upper surface of the semiconductor substrate, in a boundary region of the optical-black region,wherein the boundary region is adjacent to the active region, andthe deep trench is configured to block leakage light and diffusion carriers from the active region.2. The image sensor of claim 1 , further comprising:photoelectric conversion units of the first and second pixels which are formed vertically, with respect to the upper surface of the semiconductor substrate,wherein a depth of the deep trench is greater than depths of the photoelectric conversion units of the first and second pixels.3. The image sensor of claim 2 , wherein the deep trench is filled with dielectric material having a refractive index higher than a refractive index of the semiconductor substrate.4. The image sensor of claim of claim 2 , wherein a metal coating layer is formed on an inner surface of the deep trench.5. The image sensor of claim 2 , wherein the optical-black region includes a first optical-black region and a second optical-black ...

SOLAR CELL

A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate. 1. A solar cell , comprising:a first conductive type semiconductor substrate;a first intrinsic semiconductor layer on a front surface of the semiconductor substrate;a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer;a second conductive type second semiconductor layer on a back surface of the semiconductor substrate;a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate;a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; anda third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.2. The solar cell as claimed in claim 1 , wherein the first semiconductor layer includes a high concentration doping region between the semiconductor substrate and the first intrinsic semiconductor layer.3. The solar cell as claimed in claim 1 , wherein the first semiconductor layer includes an amorphous silicon layer on a front surface of the first intrinsic semiconductor layer.4. The solar cell as claimed in ...

Photovoltaic device and method of manufacturing the same

A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

Solar cell and manufacturing method thereof

A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode.

PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME

A photovoltaic device and a method of manufacturing the same are disclosed. In one embodiment, the device includes i) a semiconductor substrate, ii) a first conductive semiconductor layer formed on a first region of the semiconductor substrate and iii) a first transparent conductive layer formed on the first conductive semiconductor layer. The device may further include i) a second conductive semiconductor layer formed on a second region of the semiconductor substrate, ii) a second transparent conductive layer formed on the second conductive semiconductor layer and iii) a gap passivation layer interposed between i) the first layers and ii) the second layers, wherein the gap passivation layer has a thickness greater than the sum of the thicknesses of the first layers. 1. A photovoltaic device comprising:a semiconductor substrate;a first conductive semiconductor layer formed on a first region of the semiconductor substrate, wherein the first conductive semiconductor layer has a conductive type opposite to that of the semiconductor substrate;a first transparent conductive layer formed on the first conductive semiconductor layer;a second conductive semiconductor layer formed on a second region of the semiconductor substrate, wherein the second conductive semiconductor layer has a conductive type opposite to the first conductive type;a second transparent conductive layer formed on the second conductive semiconductor layer; anda gap passivation layer interposed between i) the first layers and ii) the second layers, wherein the gap passivation layer has a thickness greater than the sum of the thicknesses of the first layers.2. The photovoltaic device of claim 1 , wherein the thickness of the gap passivation layer is greater than the sum of the thicknesses of the second layers.3. The photovoltaic device of claim 1 , wherein the gap passivation layer contacts the semiconductor substrate.4. The photovoltaic device of claim 1 , further comprising a first intrinsic ...

SOLAR CELL AND MANUFACTURING METHOD THEREOF

A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper. 1. A solar cell , comprising:a semiconductor substrate;a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other;a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer; anda first electrode and a second electrode, including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer including copper.2. The solar cell as claimed in claim 1 , whereinthe intermediate layer includes a part that is narrower than the bottom layer.3. The solar cell as claimed in claim 1 , whereinthe intermediate layer includes a part having a width that is equivalent to a width of the bottom layer.4. The solar cell as claimed in claim 1 , further including a top layer on the intermediate layer claim 1 ...

METHOD AND SYSTEM FOR PROVIDING USER INTERFACE FOR DEVICE CONTROL

A user interface (UI)-providing system and method for device control are provided. The User Interface (UI) providing method, the method includes: identifying at least one controlled devices relating to an activity mode selected by a user; collecting control information relating to functions provided by the identified at least one controlled devices; and generating a UI used to control the at least one controlled devices relating to the activity mode based on the collected control information. 1. A User Interface (UI) providing method , comprising:identifying at least one controlled device relating to an activity mode selected by a user;collecting control information relating to functions provided by the identified at least one controlled device; andgenerating a UI used to control the at least one controlled device relating to the activity mode based on the collected control information.2. The method of claim 1 , further comprising providing a user terminal with the UI.3. The method of claim 1 , wherein the activity mode comprises at least one of a movie mode claim 1 , a music listening mode claim 1 , a cleaning mode claim 1 , a vacation mode claim 1 , and a sleeping mode4. The method of claim 1 , wherein the UI is changed based on a control history of the user with respect to the at least one controlled device.5. The method of claim 1 , wherein the control information comprises information regarding the control history of the user.6. The method of claim 1 , wherein collecting the control information comprises:collecting the control information from at least one of an internal database of the UI-providing apparatus, an external database connected to the UI-providing apparatus, and the at least one controlled devices.7. A User Interface (UI)-providing apparatus claim 1 , comprising:an identification unit for identifying at least one controlled device relating to an activity mode selected by a user;a control information collection unit for collecting control ...

THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED STORAGE CAPACITANCE AND MANUFACTURING METHOD THEREOF

A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode. 1. A thin film transistor array panel , comprising:a gate line;a data line intersecting the gate line;a semiconductor disposed under the data line;a thin film transistor connected to the gate line and the data line and having a drain electrode;a first insulating layer disposed on the data line and comprising an organic material;a pixel electrode disposed on the first insulating layer and connected to the drain electrode;a shielding electrode disposed in the same layer as the pixel electrode and transmitting a common voltage, the shielding electrode comprising a first portion extending along the data line and covering the data line.2. The thin film transistor array panel of claim 1 , wherein the shielding electrode completely covers boundary edges of the data line.3. The thin film transistor array panel of claim 2 , wherein the shielding electrode overlaps at least a portion of the gate line.4. The thin film transistor array panel of claim 3 , wherein the shielding electrode comprises a second portion extending along the gate line.5. The thin film transistor array panel of claim 4 , wherein a width of the shielding electrode is greater than a width of the data line.6. The thin film transistor array panel of claim 5 , wherein the width of the shielding electrode is less than a width of the gate line.7. The thin film transistor array panel of claim 4 , wherein the width of the shielding electrode is less than a width ...

THREE-DIMENSIONAL IMAGE SENSOR AND MOBILE DEVICE INCLUDING SAME

A 3D image sensor includes a depth pixel that includes; a photo detector generating photo-charge, first and second floating diffusion regions, a first transfer transistor transferring photo-charge to the first floating diffusion region during a first transfer period in response to a first transfer gate signal, a second transfer transistor transferring photo-charge to the second floating diffusion region during a second transfer period in response to a second transfer gate signal, and an overflow transistor that discharges surplus photo-charge in response to a drive gate signal. Control logic unit controlling operation of the depth pixel includes a first logic element providing the first transfer gate signal, a second logic element providing the second transfer gate signal, and another logic element providing the drive gate signal to the overflow transistor when the first transfer period overlaps, at least in part, the second transfer period. 1. A three-dimensional (3D) image sensor comprising: a photo detector configured to generate photo-charge,', 'first and second floating diffusion regions,', 'a first transfer transistor configured to transfer photo-charge from the photo detector to the first floating diffusion region during a first transfer period in response to a first transfer gate signal,', 'a second transfer transistor configured to transfer photo-charge from the photo detector to the second floating diffusion region during a second transfer period in response to a second transfer gate signal, and', 'an overflow transistor that controls discharge of surplus photo-charge generated by the photo detector in response to a drive gate signal; and, 'a pixel array comprising a plurality of depth pixels, wherein each depth pixel in the plurality of depth pixels comprises a first logic element that provides the first transfer gate signal,', 'a second logic element that provides the second transfer gate signal, and', 'another logic element that provides the drive gate ...

PIXEL, PIXEL ARRAY, AND IMAGE SENSOR

A pixel and pixel array for use in an image sensor are provided. The image sensor includes floating sensing nodes symmetrically arranged with respect to a photodiode in each pixel. 1. A pixel of an image sensor , the pixel comprising:a photodiode configured to convert an optical signal into a photocharge;at least two sensing nodes configured to sense the photocharge, the at least two sensing nodes being arranged symmetrically with respect to the photodiode; anda driver configured to convert the photocharge into an electrical signal.2. The pixel as claimed in claim 1 , further comprising a photo gate configured to apply a negative voltage to the photodiode when the photocharge is transferred from the photodiode to the at least two sensing nodes.3. The pixel as claimed in claim 2 , wherein the photo gate overlaps the photodiode.4. The pixel as claimed in claim 3 , wherein the photo gate is positioned in a path of light incident on the photodiode.5. The pixel as claimed in claim 3 , wherein the photo gate is positioned outside a path of light incident on the photodiode.6. The pixel as claimed in claim 1 , wherein the driver comprises at least two transfer transistors respectively adjacent to the at least two sensing nodes and the at least two transfer transistors are on-off controlled simultaneously.7. The pixel as claimed in claim 1 , wherein the driver is adjacent to each of at least two sides of the photodiode.8. The pixel as claimed in claim 7 , further comprising a reset element adjacent to at least one side of the photodiode.9. A pixel array of an image sensor claim 7 , the pixel array comprising:a first pixel disposed in a first row, the first pixel including a first photodiode and at least two first sensing nodes symmetrically disposed with respect to the first photodiode; anda second pixel disposed in a second row, the second pixel including a second photodiode and at least two second sensing nodes symmetrically disposed with respect to the second photodiode, ...

METHOD AND DEVICE OF MEASURING THE DISTANCE TO AN OBJECT

To measure the distance to points on an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object, a first photo-detection control signal is generated to control the radiation of the optical signal. A mask signal is generated such that the mask signal is activated at least during a shuttering duration for resetting the voltage level at a sensing node (associated with an operation of a previous frame). A second photo-detection control signal is generated based on the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration. 1. A method of measuring the distance to an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object , the method comprising:generating a first photo-detection control signal to control the periodic amplitude-modulation of the radiated optical signal;generating a mask signal activated at least during a shuttering duration for resetting the voltage level at a sensing node; andgenerating a second photo-detection control signal based on Boolean combination of the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration.2. The method of claim 1 , wherein the distance to the object is resolved using correlated double sampling (CDS) to compensate the detected phase difference for a reset voltage level.3. The method of claim 2 , wherein the mask signal is further activated at least during an activated duration of a reset control signal while detecting the reset voltage level.4. The method of claim 2 , wherein the CDS includes a first duration for detecting a signal voltage level ...

Method of preparing radioisotope nanostructure with ligand-metal framework and application

This invention relates to a method of preparing a radioisotope nanostructure having a ligand-metal framework, and a radioisotope nanostructure prepared thereby. The method of preparing the radioisotope nanostructure of the invention has a simple preparation process and can thus be applied to mass production of a radioisotope nanostructure. Also, because this radioisotope nanostructure is nano-sized spherical particles and has no reactive group, it can be easily dispersed in a fluid, and this nanostructure is physically and chemically stable and thus can be utilized as a radioisotope tracer in the fields of refineries, chemistry, cement, agriculture, water resources, marine, etc. Furthermore, this nanostructure can be used for diagnosis and/or treatment in medical fields, and can be applied to checking whether a nanomaterial is harmful. In addition, this nanostructure is expected to be applicable in a variety of fields using radioisotopes.

METHOD AND APPARATUS FOR SELECTING MODULATION AND CODING SCHEME (MCS) INDEX BASED ON FREQUENCY SELECTIVITY

A method of selecting a modulation and coding scheme (MCS) index in a wireless communication system is disclosed. More specifically, the method includes measuring a frequency selectivity of a receiving channel, selecting a MCS index having a coding rate below a prescribed coding rate threshold value if the measured frequency selectivity is greater than or equal to a specified frequency selectivity threshold, and selecting the MCS index having the coding rate above or equal to the prescribed coding rate threshold value if the measured frequency selectivity is less than the specified frequency selectivity threshold. 1transmitting, information related to a channel quality, to a base station; andreceiving, a MCS index selected from a single MCS table, from the base station,wherein the MCS index is selected according to a predetermined rule,wherein the single MCS table comprises more MCS indexes than can be distinguished based on the information related to the channel quality, and one or more MCS indexes are determined based on a modulation scheme indicated by the information related to the channel quality, and', 'after the one or more MCS indexes are determined based on the modulation scheme, if there is a plurality of MCS indexes determined based on the modulation scheme indicated by the information related to the channel quality, the MCS index is selected based on a coding rate indicated by the information related to the channel quality from among the plurality of the MCS indexes., 'wherein the predetermined rule includes. A method of receiving a modulation and coding scheme (MCS) index by a user equipment in a wireless communication system, the method comprising: This application is a Continuation of co-pending application Ser. No. 12/524,755 filed on Jul. 28, 2009, which is the national phase of PCT International Application No. PCT/KR2008/000291 filed on Jan. 17, 2008, and which claims priority to Application No. 10-2007-0009375 filed in the Republic of Korea on ...

IMAGE SENSOR AND AN IMAGE CAPTURING APPARATUS INCLUDING THE IMAGE SENSOR

An image sensor includes a pixel array. The pixel array includes a plurality of sensing pixels and at least two focusing pixels adjacent to each other. Each of the sensing pixels is configured to output an image signal corresponding to an amount of light incident on the sensing pixels. The at least two focusing pixels are configured to output a focusing signal corresponding to a phase difference between light incident on the at least two focusing pixels. Each of the sensing pixels and the at least two focusing pixels includes a semiconductor layer including a photodetecting device. Each of the sensing pixels includes a light guide which guides incident light toward the photodetecting device, and each of the at least two focusing pixels does not include the light guide. 1. An image sensor comprising:a pixel array comprising:a plurality of sensing pixels, each sensing pixel configured to output an image signal corresponding to an amount of light incident on the sensing pixel; and wherein each of the sensing pixels and the at least two focusing pixels comprises:', 'a semiconductor layer including a photodetecting device configured to accumulate electric charges generated according to absorbed light of the incident light;', 'a wiring layer disposed on a first surface of the semiconductor layer, the wiring layer including wirings; and', 'a color filter layer and a microlens layer disposed on a first surface of the wiring layer, wherein the color filter layer selectively transmits the incident light according to a wavelength of the incident light and the microlens layer selectively focuses the incident light onto the photodetecting device,', 'wherein each of the sensing pixels comprises a light guide which guides light incident via the color filter layer and the microlens layer toward the photodetecting device, and each of the focusing pixels does not comprise the light guide., 'at least two focusing pixels adjacent to each other, the at least two focusing pixels ...

Pixel arrays of image sensors, and image sensors including the pixel arrays

Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

CUTTING INSERT AND CUTTING TOOL HAVING SAME MOUNTED THEREON

The technical objective of the present invention is to provide a cutting insert that can minimize a phenomenon in which the cutting insert is lifted up from a seat surface of a cutting tool while a cutting process is being performed, and can increase an area by which the cutting insert is fastened to the cutting tool. To this end, the cutting insert of the present invention comprises: a principal surface; a fastening surface opposite to the principal surface, the fastening surface being placed on the seat surface of the cutting tool; and a screw passage hole formed through each of central portions of the principal and fastening surfaces, wherein a screw is fastened to the cutting tool through the screw passage hole; and first and second long grooves extending across the fastening surface, wherein each of the first and second long grooves includes: a proximal sidewall adjoining a first adjacent fastening portion of the fastening surface and making an acute angle with the first adjacent fastening portion; a distal sidewall adjoining a second adjacent fastening portion of the fastening surface and making an angle with the second adjacent fastening portion; and a ceiling wall connecting the proximal and distal sidewalls, wherein the proximal sidewall is located closer to the screw passage hole than the distal sidewall is located to the screw passage hole. 1. A cutting insert , comprising:a principal surface;a fastening surface opposite to the principal surface, the fastening surface being placed on the seat surface of a cutting tool;a screw passage hole formed through each of central portions of the principal and fastening surfaces, wherein a screw is fastened to the cutting tool through the screw passage hole; and a proximal sidewall adjoining a first adjacent fastening portion of the fastening surface and making an acute angle with the first adjacent fastening portion;', 'a distal sidewall adjoining a second adjacent fastening portion of the fastening surface and ...

METHOD AND DEVICE OF MEASURING THE DISTANCE TO AN OBJECT

To measure the distance to points on an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object, a first photo-detection control signal is generated to control the radiation of the optical signal. A mask signal is generated such that the mask signal is activated at least during a shuttering duration for resetting the voltage level at a sensing node (associated with an operation of a previous frame). A second photo-detection control signal is generated based on the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration. 1. A method of measuring the distance to an object by radiating a periodic amplitude-modulated optical signal to the object and detecting the phase difference between the radiated optical signal and a reflected optical signal from the object , the method comprising:generating a first photo-detection control signal to control the periodic amplitude-modulation of the radiated optical signal;generating a mask signal activated at least during a shuttering duration for resetting the voltage level at a sensing node; andgenerating a second photo-detection control signal based on Boolean combination of the first photo-detection signal and the mask signal such that the second photo-detection signal is deactivated or masked at least during the shuttering duration.2. The method of claim 1 , wherein the distance to the object is resolved using correlated double sampling (CDS) to compensate the detected phase difference for a reset voltage level.3. The method of claim 2 , wherein the mask signal is further activated at least during an activated duration of a reset control signal while detecting the reset voltage level.4. The method of claim 2 , wherein the CDS includes a first duration for detecting a signal voltage level ...

LIDAR WINDOW INTEGRATED OPTICAL FILTER

Disclosed is a LiDAR window integrated optical filter that includes a window of a polymer material for absorbing a visible light band and transmitting a near-infrared band; and an upper reflective layer and a lower reflective layer formed on the upper surface and the lower surface of the window. The upper reflective layer and the lower reflective layer may be formed in a thin film including titanium dioxide (TiO) and silicon dioxide (SiO). 1. A light detection and ranging (LiDAR) window integrated optical filter , comprising:a window comprising a polymer material;an upper reflective layer formed on an upper surface of the window; anda lower reflective layer formed on a lower surface of the window;wherein the polymer material absorbs a visible light and transmits a near-infrared light,{'sub': 2', '2, 'wherein each of the upper reflective layer and the lower reflective layer is formed in a film comprising titanium dioxide (TiO) and silicon dioxide (SiO).'}2. The LiDAR window integrated optical filter of claim 1 ,wherein the each of the upper reflective layer and the lower reflective layer are formed in a multilayer film by vapor deposition.3. The LiDAR window integrated optical filter of claim 2 ,{'sub': 2', '2, 'wherein the each of the upper reflective layer and the lower reflective layer is formed with the film by laminating a plurality of SiOlayers and TiOlayers.'}4. The LiDAR window integrated optical filter of claim 3 ,wherein a thickness of the upper reflective layer is about 4 to 7 μm.5. The LiDAR window integrated optical filter of claim 3 ,wherein the upper reflective layer is deposited as a multilayer structure of 25 to 30 layers.6. The LiDAR window integrated optical filter of claim 5 ,wherein the upper reflective layer reflects infrared light having a wave length of about 1,400 to 1,600 nm.7. The LiDAR window integrated optical filter of claim 3 ,wherein a thickness of the lower reflective layer is about 4 to 7 μm.8. The LiDAR window integrated optical ...

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

A solar cell having improved electric energy generation efficiency and a method of manufacturing the solar cell. The solar cell includes a substrate, a rear electrode layer on the substrate and comprising a first rear electrode and a second rear electrode spaced from each other, a window electrode layer on the rear electrode layer and comprising a first window electrode electrically coupled to the second rear electrode at a contact region on the second rear electrode, a light-absorbing layer between the rear electrode layer and the window electrode layer, and an insulating layer on a first portion of the second rear electrode, wherein the first portion is between an edge of the second rear electrode facing the first rear electrode and the contact region. 1. A solar cell comprising:a substrate;a rear electrode layer on the substrate and comprising a first rear electrode and a second rear electrode spaced from each other;a window electrode layer on the rear electrode layer and comprising a first window electrode electrically coupled to the second rear electrode at a contact region on the second rear electrode;a light-absorbing layer between the rear electrode layer and the window electrode layer; andan insulating layer on a first portion of the second rear electrode, wherein the first portion is between an edge of the second rear electrode facing the first rear electrode and the contact region.2. The solar cell of claim 1 , wherein the insulating layer covers an entire top surface of the first portion of the second rear electrode.3. The solar cell of claim 1 , wherein the insulating layer covers a portion of a top surface of the first portion of the second rear electrode.4. The solar cell of claim 1 , wherein the insulating layer comprises at least one material selected from among polyimide (PI) claim 1 , Kevlar claim 1 , novolak claim 1 , polyethylene terephthalate (PET) claim 1 , ethylenevinylacetate (EVA) claim 1 , and polycarbonate (PC).5. The solar cell of claim ...

Thin Film Transistor and Method for Manufacturing a Display Panel

Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved. 1. A manufacturing method of a display panel comprising:forming a gate electrode on a substrate;forming a gate insulating layer on the gate electrode;sequentially depositing a first material layer, a second material layer, and a third material layer on the gate insulating layer;etching the third material layer, the second material layer, and the first material layer to form a data conductor, an extrinsic semiconductor, and an intrinsic semiconductor;etching the data conductor to form a source electrode and a drain electrode and simultaneously exposing a first portion of the extrinsic semiconductor;plasma-treating the first portion of the extrinsic semiconductor between the source electrode and the drain electrode, the first portion comprising a protection member and respective sides of the protection member comprising ohmic contacts;forming a color filter on the source electrode, the drain electrode, and the protection member; andforming a pixel electrode connected to the drain ...

VEHICLE AND CONTROL METHOD THEREOF

A vehicle includes a room mirror provided to be rotatable and providing a display mode, and a memory for storing an image capable of being displayed on the room mirror in the display mode, wherein, when the room mirror is rotated toward a front glass, the room mirror is converted into the display mode and displays the image stored in the memory. 1. A vehicle comprising:a room mirror provided to be rotatable and providing a display mode; anda memory for storing an image capable of being displayed on the room mirror in the display mode,wherein, when the room mirror is rotated toward a front glass, the room mirror is converted into the display mode and displays the image stored in the memory.2. The vehicle according to claim 1 , further comprising a rear camera for obtaining a rear image of the vehicle claim 1 ,wherein, when a shift lever is moved to an R (reverse) position, the room mirror is converted into the display mode, and displays the rear image of the vehicle obtained by the rear camera.3. The vehicle according to claim 1 , wherein claim 1 , when an engine of the vehicle is turned off claim 1 , the room mirror is converted into a mirror mode.4. The vehicle according to claim 1 , wherein claim 1 , when an engine of the vehicle is turned off claim 1 , the room mirror is rotated toward the front glass claim 1 , and converted into the display mode.5. The vehicle according to claim 1 , wherein claim 1 , when an engine of the vehicle is turned on claim 1 , the room mirror is rotated toward a rear glass claim 1 , and converted into a mirror mode.6. The vehicle according to claim 1 , further comprising an input unit for receiving an input of a command for rotating the room mirror toward the front glass or a rear glass.7. The vehicle according to claim 1 , further comprising a communicator for receiving an image transmitted from a wireless communication terminal claim 1 ,wherein the memory stores an image received by the communicator.8. The vehicle according to claim 1 ...

USER TERMINAL APPARATUS, NETWORK APPARATUS, AND CONTROL METHOD THEREOF

A network apparatus including a communicator to perform communication with a plurality of devices and a user terminal apparatus to control the plurality of devices is provided. A controller generates control signals to control the plurality of devices based on a user command received from the user terminal apparatus, and controls the communicator to transmit the control signals to the plurality of devices; wherein, in response to a predetermined control pattern to sequentially control the plurality of devices being detected, the controller generates and transmits macro information which corresponds to the detected control pattern to the user terminal apparatus. 1. A network apparatus comprising:a communicator configured to perform communication with a plurality of devices and a user terminal apparatus in order to control the plurality of devices; anda controller configured to generate control signals to control the plurality of devices based on a user command received from the user terminal apparatus, and controls the communicator to transmit the control signals to the plurality of devices,wherein, in response to a predetermined control pattern to sequentially control the plurality of devices being detected, the controller generates and transmits to the user terminal apparatus macro information which corresponds to the detected control pattern.2. The network apparatus of claim 1 , wherein claim 1 ,in response to the predetermined control pattern being repeatedly detected, the controller generates macro information which corresponds to the detected control pattern.3. The network apparatus of claim 1 , wherein claim 1 ,after a macro which corresponds to the generated macro information being executed according to a user command so that control related to the plurality of devices is performed, in response to a user command for changing a state of at least one of the plurality of devices being received, the plurality of devices is returned to a state that existed prior ...

Method and device for processing images to save power

A method and a device for processing images to save power are provided. A method by which a device processes images displayed on a screen includes determining a battery level of the device, comparing the battery level with a plurality of set threshold ranges, and changing a background image and an icon image displayed on the screen of the device based on a comparison result.

Image Sensors and Related Methods and Electronic Devices

An image sensor is provided including a pixel array, a correlated double sampling (CDS) unit, an analog-digital converting (ADC) unit, a control unit, and an overflow power voltage control unit. The pixel array includes at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and outputs an analog signal based on the accumulated charges in a readout period. The CDS unit generates an image signal by performing a CDS operation on the analog signal. An ADC unit converts the image signal into a digital signal. A control unit controls the pixel array, the CDS unit, and the ADC unit. An overflow power voltage control unit controls an overflow power voltage to have a low voltage level in the photoelectric conversion period and controls the overflow power voltage to have a high voltage level in the readout period. 1. An image sensor comprising:a pixel array including at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and that outputs an analog signal based on the accumulated charges in a readout period;a correlated double sampling unit configured to generate an image signal by performing a correlated double sampling operation on the analog signal;an analog-digital converting unit configured to convert the image signal into a digital signal;a control unit configured to control the pixel array, the correlated double sampling unit, and the analog-digital converting unit; andan overflow power voltage control unit configured to control an overflow power voltage applied to the unit pixel to have a low voltage level in the photoelectric conversion period and to control the overflow power voltage to have a high voltage level in the readout period.2. The image sensor of claim 1 , wherein the overflow power voltage control unit is in the control unit.3. The image sensor of claim 1 , wherein the overflow power voltage control unit controls ...

METHOD OF TRANSMITTING AND RECEIVING CONTROL INFORMATION IN WIRELESS COMMUNICATION SYSTEM

A method of receiving control information in a wireless communication system includes receiving position information for searching at least one downlink control channel, a downlink control channel carrying control information of at least one user equipment, receiving multiplexed downlink control channel in which a plurality of downlink control channels are sequentially multiplexed and sequentially searching the downlink control channel on the multiplexed downlink control channel according to the position information. The number of detection attempts to detect its own control information can be reduced. 111-. (canceled)12. A method for monitoring a downlink control channel in a wireless communication system , the method performed by a user equipment (UE) and comprising:receiving a plurality of downlink control channels in a subframe, wherein the plurality of downlink control channels include a UE-specific search space, wherein the plurality of downlink control channels are defined based on a plurality of levels including a first level, a second level, and a third level, wherein a value of the third level is two times greater than a value of the second level, and wherein a value of the second level is two times greater than a value of the first level; andmonitoring at least one of the plurality of downlink control channels, wherein a monitored space of the at least one of the plurality of downlink control channels is determined by using UE-specific information which is used to identify the UE and the at least one level which is used by the UE.13. The method of claim 12 , wherein the plurality of downlink control channels are physical downlink control channels (PDCCHs).14. The method of claim 12 , wherein the subframe includes a plurality of orthogonal frequency division multiplexing (OFDM) symbols.15. A user equipment for monitoring a downlink control channel in a wireless communication system claim 12 ,a radio frequency (RF) unit configured to transmit and receive ...

DISPLAY DRIVING DEVICE, DISPLAY DEVICE AND OPERATING METHOD THEREOF

A display device is provided. The display device includes a display panel including a plurality of pixel arrangement areas, a data driving unit including a plurality of source drivers, and a timing controller configured to process data that is input from an external device and configured to generate output data. Each of the plurality of pixel arrangement areas includes a plurality of pixels arranged in areas in which a plurality of gate lines intersect a plurality of data lines. Each of the plurality of source drivers outputs display data to data lines of its corresponding pixels. The timing controller classifies the plurality of pixel arrangement areas based on a distance between the timing controller and each of the plurality of pixel arrangement areas, and transmits the output data to the data driving unit at at least two transmission speeds based on the classification. 1. A display device comprising:a display panel comprising a plurality of pixel arrangement areas, each of the plurality of arrangement areas comprising a plurality of pixels arranged in areas in which a plurality of gate lines intersect a plurality of data lines;a data driving circuit comprising a plurality of source drivers, each of the plurality of source drivers being configured to output display data to data lines of corresponding pixels; anda timing controller configured to process input data from an external device and configured to generate output data,wherein the timing controller is configured to classify the plurality of pixel arrangement areas based on a distance between the timing controller and each of the plurality of pixel arrangement areas, andthe timing controller is configured to transmit the output data to the data driving circuit at at least two transmission speeds based on a result of classifying the plurality of pixel arrangement areas.2. The display device of claim 1 , wherein the number of pixels of each of the plurality of pixel arrangement areas changes according to the ...

APPARATUS AND METHOD FOR RECOGNIZING VOICE

An apparatus and a method for recognizing a voice include a plurality of array microphones configured to have at least one microphone, and a seat controller configured to check a position of a seat provided in a vehicle. A microphone controller is configured to set a beam forming region based on the checked position of the seat and controls an array microphone so as to obtain sound source data from the set beam forming region. 1. An apparatus for recognizing a voice , the apparatus comprising:a plurality of array microphones configured to have at least one microphone;a seat controller configured to check a position of a seat provided in a vehicle; anda microphone controller configured to set a beam forming region based on the checked position of the seat and control the array microphones so as to obtain sound source data from the set beam forming region.2. The apparatus according to claim 1 , wherein the microphone controller recognizes a total movement distance of the seat as a total beam forming angle of the array microphones.3. The apparatus according to claim 2 , wherein the microphone controller divides the total movement distance of the seat equally into a plurality of sections and divides the total beam forming angle of the array microphones equally into a plurality of sections according to the divided sections to thereby form first beam forming sections.4. The apparatus according to claim 3 , wherein the microphone controller sets a section corresponding to the seat position among the first beam forming sections as a first beam forming region.5. The apparatus according to claim 4 , wherein the microphone controller divides the first beam forming region into a plurality of sections to thereby generate a plurality of second beam forming sections.6. The apparatus according to claim 5 , wherein the microphone controller controls a first array microphone and a second array microphone so as to obtain sound source data of different sections from the plurality of ...

DEPTH PIXEL INCLUDED IN THREE-DIMENSIONAL IMAGE SENSOR AND THREE-DIMENSIONAL IMAGE SENSOR INCLUDING THE SAME

A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.

IMAGE SENSOR

Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device, which is formed in the semiconductor layer near the first surface and accumulates charges based on light incident via the second surface; a charge storage device, which is formed in the semiconductor layer near the first surface and temporarily stores charges accumulated by the photosensitive device; a first transmission transistor, which transmits charges accumulated by the photosensitive device to the charge storage device and includes a first gate formed on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region, which is formed in the semiconductor layer near the second surface, is apart from the charge storage device, and is arranged above the charge storage device. 1. An image sensor comprising:a semiconductor layer having a first surface and a second surface that are opposite to each other;a photosensitive device in the semiconductor layer near the first surface and that is configured to accumulate charges based on light incident at the second surface;a charge storage device in the semiconductor layer near the first surface and that is configured to temporarily store charges accumulated by the photosensitive device;a first transmission transistor configured to transmit charges accumulated by the photosensitive device to the charge storage device and that includes a first gate on the first surface of the semiconductor layer; anda leakage photogenerated charge drain region in the semiconductor layer near the second surface, apart from the charge storage device, and above the charge storage device.2. The image sensor of claim 1 , further comprising a blocking on the second surface of the semiconductor layer and configured to block light traveling toward the charge ...

IMAGE SENSOR AND METHOD OF CORRECTING OUTPUT SIGNAL OF THE IMAGE SENSOR

A method of processing signals from an image sensor outputting signals from rows of pixels in the image sensor having optical signals, outputting signals from rows of pixels in the image sensor not having optical signals, and correcting the signals from the rows of pixels having optical signals based on the signals corresponding to the rows of pixels not having optical signals. 1. A method of processing signals from an image sensor , which includes a plurality of pixels in each of a plurality of rows , the method comprising:outputting signals from rows having optical signals;outputting signals from rows not having optical signals; andcorrecting the signals from the rows having optical signals based on the signals corresponding to the rows not having optical signals.2. The method as claimed in claim 1 , wherein correcting the signals corresponding to the rows having the optical signals includes:correcting signals output from pixels of odd-numbered rows; andcorrecting signals output from pixels of even-numbered rows.3. The method as claimed in claim 2 , wherein correcting the signals output from the pixels of the odd-numbered rows includes:transmitting a signal from a photodiode region to a storage diode region in each of the pixels of the odd-numbered rows;reading the signal of the storage diode region included in each of the pixels of the odd-numbered rows and the pixels of the even-numbered rows; andsubtracting values of the signals output from the pixels of the even-numbered rows from corresponding values of the signals output from the pixels of the odd-numbered rows.4. The method as claimed in claim 2 , wherein correcting the signals output from the pixels of the even-numbered rows includes:transmitting a signal from a photodiode region to a storage diode region in each of the pixels of the even-numbered rows;reading a signal of a storage diode region included in each of the pixels of the odd-numbered rows and the pixels of the even-numbered rows; andsubtracting ...

IMAGE SENSOR AND METHOD OF CORRECTION OUTPUT SIGNAL OF THE IMAGE SENSOR

A pixel array includes an array of pixels to receive light, a first pixel to be blocked from receiving the light, and a circuit to adjust signals output from pixels in the array based on a signal from the first pixel. The signals output from the pixels in the array include a first error value. The circuit reduces the first error value in the signals from the pixels in the array based on the signal from the first pixel. The circuit may also reduce a second error value in the signals output from the pixels in the array based on a signal from a second pixel. The first and second pixels may be outside of the pixel array. The first and second error values may be storage diode leakage value and a dark current value. 1. An image sensor , comprising:a row driver configured to generate a storage control signal, a transfer control signal, a reset control signal, and a row selecting signal;a pixel array including an optical black sample array adjacent to an active array, the pixel array configured to receive optical signals and convert the optical signals to electric signals and configured to output the electric signals as image signals in response to the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal;an analog-to-digital converter configured to perform an analog-to-digital conversion on the image signals to generate first signals; andan output correcting circuit configured to compare values of signals output from the active array with values of signals output from the optical black sample array, and configured to correct the signals output from the active array to generate second signals based on the comparison.2. The image sensor as claimed in claim 1 , wherein the optical black sample array is configured to be fully shielded from light.3. The image sensor as claimed in claim 1 , wherein:the signals output from the active array among the first signals include signal components corresponding to optical signals and ...

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

A solar cell includes an optical absorption layer; a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; and a transparent electrode layer on the buffer layer, wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface of the buffer layer. 1. A solar cell , comprising:an optical absorption layer;a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; anda transparent electrode layer on the buffer layer,wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface thereof.2. The solar cell as claimed in claim 1 , wherein the band gap energy gradient is continuous or discontinuous.3. The solar cell as claimed in claim 1 , wherein the buffer layer includes hydrogen claim 1 , the lower surface of the buffer layer having a hydrogen concentration higher than the upper surface thereof.4. The solar cell as claimed in claim 1 , wherein the buffer layer includes phosphorus claim 1 , the lower surface of the buffer layer having a phosphorus concentration lower than the upper surface thereof.5. The solar cell as claimed in claim 1 , wherein a band gap energy difference ΔEg between the lower surface and the upper surface of the buffer layer (ΔEg=E1−E2 claim 1 , where E1 is the band gap energy of the lower surface and E2 is the band gap energy of the upper surface) is in a range of 0<ΔEg≦0.6 eV.6. The solar cell as claimed in claim 1 , wherein the buffer layer is an amorphous phase or a micro crystalline phase.7. The solar cell as claimed in claim 1 , further comprising an intrinsic semiconductor layer between the buffer layer and the transparent electrode layer.8. The solar cell as claimed in claim 1 , wherein the optical absorption layer includes a crystal structure selected from the group of a Cu(In claim 1 ,Ga)Se(CIGS) crystal structure claim 1 , a Cu(In)Se(CIS group) ...

METHOD AND SYSTEM FOR PROVIDING USER INTERFACE FOR DEVICE CONTROL

A user interface (UI)-providing system and method for device control are provided. The User Interface (UI) providing method, the method includes: identifying at least one controlled devices relating to an activity mode selected by a user; collecting control information relating to functions provided by the identified at least one controlled devices; and generating a UI used to control the at least one controlled devices relating to the activity mode based on the collected control information. 1. An user terminal comprising:a communicator, and transmit a control information to a server through the communicator,', 'receive a recommendation information comprising information regarding at least one controlled device and at least one control function based on the control information from the server,', 'display a list of the at least one controlled device and the at least one control function in the received recommendation information,', 'receive an input to select at least one controlled device and at least one control function from among the displayed list that are to be included in a user interface (UI), and', 'display the UI including the selected at least one control function and the selected at least one controlled device,', 'wherein the UI may be used to control the selected at least one controlled device to perform the selected at least one control function., 'a controller configured to2. The user terminal of claim 1 , wherein the controller is further configured to:request control command information corresponding to the selected at least one control function to the server,receive the control command information from the server, andgenerate, based on the received control command information, the UI used for controlling the selected at least one device to perform the selected at least one function.3. The user terminal of claim 1 , wherein the control information comprises information regarding a user control history claim 1 , the user control history comprising at ...

USER TERMINAL AND CONTROL METHOD THEREOF

A user terminal and a control method thereof, in which contents may be shared with a simple input are provided. The user terminal includes a display configured to display a screen of a content, a communicator configured to communicate with another device, a user input configured to receive a user's input, and a controller configured to determine one transfer mode among a plurality of transfer modes for transferring contents based on information about the contents being executed in one of the user terminal and the other device, and controls the executing content that is transferred between the user terminal and the other device in the determined one transfer mode. 1. A user terminal comprising:a display configured to display a screen of a content;a communicator configured to communicate with another device;a user input configured to receive a user's input; and to determine one transfer mode among a plurality of transfer modes for transferring contents based on information about the contents being executed in one of the user terminal and the other device, and', 'to control the executing content that is transferred between the user terminal and the other device in the determined one transfer mode., 'a controller configured2. The user terminal according to claim 1 , wherein the information about the content being executed comprises attribute information about at least one among reproduction of a content of one between the user terminal and one of the other device and a broadcast about the content claim 1 , display of the content claim 1 , and a wallpaper comprising User Interface (UI) items of an application about the content.3. The user terminal according to claim 1 , wherein the plurality of transfer modes comprises one among transferring claim 1 , mirroring claim 1 , and streaming4. The user terminal according to claim 3 , wherein the controller is further configured to determine a connection mode by determining a network state between the user terminal and the other ...

IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region. 17-. (canceled)8. A unit pixel of an image sensor , the unit pixel comprising:a color filter layer;a photo-electric conversion region in a semiconductor layer that accumulates electric charges according to light that passes through the color filter layer and is incident and is spaced apart from a first surface of the color filter layer by a first distance;a charge storage region in the semiconductor layer that stores the accumulated electric charges and is spaced apart from the photo-electric conversion region; anda shield film on or above the charge storage region that blocks light incident on the charge storage region and is disposed between the color filter layer and the charge storage region and is spaced apart from the first surface of the color filter layer by a second distance and is spaced apart from a front surface of the semiconductor layer that contacts the photo-electric conversion region and the charge storage region by a third distance,wherein the second distance is greater than the first distance.9. The unit pixel of claim 8 , wherein the third distance is about 0.2 μm to about 1 μm.10. The unit pixel of claim 9 , wherein the shield film extends toward the first surface of the color filter layer along a side surface of the photo-electric conversion region.11. The unit pixel of claim 8 , further comprising an insulating film that is disposed between the charge storage region and the shield film.12. The unit pixel of claim 8 , further ...

PHOTOELECTRIC MODULE AND METHOD OF MANUFACTURING THE SAME

A photoelectric module includes a substrate, a first photoelectric conversion unit that is formed on the substrate and has a first light-receiving surface, and a second photoelectric conversion unit that is formed under the substrate and has a second light-receiving surface, wherein a front electrode of the second photoelectric conversion unit has a thickness smaller than that of a front electrode of the first photoelectric conversion unit. Also, the photoelectric module is a dual-side light-receiving photoelectric module having light-receiving surfaces on and under the substrate, and the first and second photoelectric conversion units respectively formed on the upper and lower surfaces of the substrate are differently designed to compensate for an intensity difference of incident light. Methods of manufacturing the dual-side light-receiving photoelectric module are provided. 1. A photoelectric module comprising:a substrate;a first photoelectric conversion unit on the substrate and having a first light-receiving surface and a front electrode; anda second photoelectric conversion unit under the substrate and having a second light-receiving surface and a front electrode,wherein the front electrode of the second photoelectric conversion unit has a thickness smaller than that of the front electrode of the first photoelectric conversion unit.2. The photoelectric module of claim 1 , wherein the front electrode of the second photoelectric conversion unit has a thickness of at least 0.6 μm.3. The photoelectric module of claim 1 , wherein the first photoelectric conversion unit comprises a plurality of photoelectric cells of a first group and the second photoelectric conversion unit comprises a plurality of photoelectric cells of a second group claim 1 , and a width of the plurality of photoelectric cells of the second group is smaller than that of the plurality of photoelectric cells of the first group.4. The photoelectric module of claim 1 , whereinthe first photoelectric ...

VEHICLE AND CONTROL METHOD THEREOF

A vehicle of outputting a sound using a difference between a human's audible frequency and a pet's audible frequency, and a method of controlling the vehicle are provided. The vehicle includes a sound processor that is configured to tune and mix a sound and a sound controller that is configured to determine a sound being output as one of a first sound having a frequency within a human's audible frequency range and a second sound having a frequency beyond the human's audible frequency range. When a command for reproducing another sound other than the determined sound is received, the sound processor is configured to mix the determined sound with the other sound corresponding to the command and a speaker is then configured to output the mixed sound.

Linear-Logarithmic Image Sensors and Electronic Devices Including the Same

A linear-logarithmic image sensor includes a pixel array, a signal generation unit, and a control unit. The pixel array includes at least one unit pixel that generates a leakage signal corresponding to leakage photo-charges and that sequentially generates a first analog signal corresponding to a portion of accumulated photo-charges and a second analog signal corresponding to a whole of the accumulated photo-charges by resetting a floating diffusion node and transferring the accumulated photo-charges from a storage node to the floating diffusion node in response to first and second transfer control signals that are sequentially activated. The signal generation unit includes at least one signal generation block that generates a final analog signal based on the leakage signal, the first analog signal, and the second analog signal. The control unit controls the pixel array and the signal generation unit.

TOUCH SCREEN PANEL, ELECTRONIC NOTEBOOK, AND MOBILE TERMINAL

A touch screen panel may include a liquid crystal, a first transparent electrode and a second transparent electrode provided at both sides of the liquid crystal, and a controller configured to transfer image data to the first transparent electrode and the second transparent electrode in a first mode and sense a touch of a user on at least one of the first transparent electrode and the second transparent electrode in a second mode. 1. A touch screen panel comprising:a liquid crystal;a first transparent electrode and a second transparent electrode provided at both sides of the liquid crystal; anda controller configured to transfer image data to the first transparent electrode and the second transparent electrode in a first mode and sense a touch of a user on at least one of the first transparent electrode and the second transparent electrode in a second mode.2. The touch screen panel of claim 1 , further comprising:a display driver configured to supply a driving voltage corresponding to the image data to the first transparent electrode and the second transparent electrode in the first mode; anda touch sensor configured to transfer a sensing signal to the first transparent electrode and receive a response signal of the second transparent electrode in the second mode.3. The touch screen panel of claim 2 , wherein:the first transparent electrode includes a plurality of first conductive lines that are parallel to each other; andthe second transparent electrode includes a plurality of second conductive lines that are perpendicular to the plurality of first conductive lines.4. The touch screen panel of claim 3 , wherein the display driver provides a scan signal to the plurality of second conductive lines in a predetermined order and provides the image data lo (he plurality of first conductive lines.5. The touch screen panel of claim 3 , wherein the touch sensor provides the sensing signal to the plurality of first conductive lines in a predetermined order and receives the ...

LIQUEFIED GAS CARRIER

The present invention relates to a liquefied gas carrier having a width of less than 32.3 m to pass through the old Panama Canal, which includes a liquefied gas tank having a liquefied gas storage capacity of 70K or more, preferably 78.7K. 1. A liquefied gas carrier having a width of less than 32.3 m to pass through the old Panama Canal , the liquefied gas carrier comprising:a liquefied gas tank having a liquefied gas storage capacity of 70K or more, preferably 78.7K.2. The liquefied gas carrier of claim 1 , wherein the liquefied gas tank is provided in plurality.3. The liquefied gas carrier of claim 1 , comprising a body accommodating the liquefied gas tank claim 1 ,wherein the height of the body is 22 m to 23.5 m.4. The liquefied gas carrier of claim 1 , comprising a body accommodating the liquefied gas tank claim 1 ,wherein a shell of the body is provided in a single hull.5. The liquefied gas carrier of claim 1 , wherein the liquefied gas tank includes an upper part claim 1 , a central part claim 1 , and a lower part claim 1 ,wherein the vertical length of the central part is larger than the sum of the vertical length of the upper part and the vertical length of the lower part.6. The liquefied gas carrier of claim 2 , wherein the liquefied gas tank includes a first liquefied gas tank disposed at a bow claim 2 ,wherein the first liquefied gas tank has at least two bending parts.7. The liquefied gas carrier of claim 1 , wherein the liquefied gas tank includes an upper part claim 1 , a central part claim 1 , and a lower part claim 1 ,wherein the vertical length of the central part of the liquefied gas tank is formed to further extend than that of a central part of a liquefied gas tank of a liquefied gas carrier having a liquefied gas storage capacity of less than 70K.8. The liquefied gas carrier of claim 7 , wherein the vertical lengths of the upper part and the lower part of the liquefied gas tank are formed equal to those of an upper part and a lower part of a ...

IMAGE SENSOR AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME

An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material. 1. An image sensor comprising:a floating diffusion node and a storage element, the floating diffusion node and the storage node being in a semiconductor substrate;a first light-shielding material formed over the floating diffusion node; anda second light-shielding material formed over the storage element, the second light-shielding material being separated from the first light-shielding material.2. The image sensor of claim 1 , further comprising:a first voltage supply line configured to apply a first voltage to the first light-shielding material; anda second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.3. The image sensor of claim 2 , wherein the second voltage supply line is a ground line.4. The image sensor of claim 1 , wherein the first light-shielding material and the second light-shielding material include tungsten.511-. (canceled)12. An image processing system comprising:an image sensor; anda processor configured to process image data output from the image sensor, a floating diffusion node and a storage element, the floating diffusion node and the storage node being in a semiconductor substrate,', 'a first light-shielding material formed over the floating ...

USER TERMINAL DEVICE AND CONTROL METHOD THEREFOR

Disclosed are a user terminal apparatus and a control method therefor. According to the present invention, a user terminal apparatus comprises: a communication unit for performing data communication with a plurality of other user terminal devices which are set as a group; a controller for determining an output order of voice messages corresponding to user voices according to a predetermined condition, when the user voices are received from a plurality of other user terminal apparatus; and an output unit for outputting voice messages in a determined output order. Accordingly, the user terminal apparatus can provide a service that enables easy group community with a plurality of other user apparatus. 1. A user terminal apparatus comprising:a communicator configured to perform data communication with a plurality of other user terminal apparatuses set as a group;a controller configured to, in response to a user voice being received from the plurality of other user terminal apparatuses, determine an output order of a voice message corresponding to the user voice according to a predetermined condition; andan output unit configured to output the voice message in the determined output order.2. The user terminal apparatus as claimed in claim 1 , wherein the controller claim 1 , in response to a user voice being received from the plurality of other user terminal apparatuses claim 1 , determines an output order of a voice message corresponding to the user voice based on an order of receipt of the user voice.3. The user terminal apparatus as claimed in claim 1 , wherein the controller determines an output order of a voice message corresponding to a user voice received from the plurality of other user terminal apparatuses based on an order that an utterance request message is received from the plurality of other user terminal apparatuses.4. The user terminal apparatus as claimed in claim 1 , wherein the controller analyzes similarity of a voice message corresponding to a user ...

METHOD OF DRIVING AN IMAGE SENSOR, IMAGE SENSOR EMPLOYING THE SAME, AND PORTABLE ELECTRONIC DEVICE INCLUDING THE SAME

An image sensor includes a pixel array including at least one unit pixel configured to generate accumulated charges, a correlated double sampler configured to perform a correlated double sampling operation to extract an effective signal component based on a signal component and a reset component from the unit pixel for at least first and second read-out periods, the correlated double sampler configured to read out an image signal during the first read-out period and to read out a light noise signal during the second read-out period, an analog-digital converter configured to convert the image signal into a first digital signal and to convert the light noise signal into a second digital signal and an image compensator configured to generate a compensated image signal based on the second digital signal and the first digital signal. 1. An image sensor comprising:a pixel array including at least one unit pixel configured to generate accumulated charges corresponding to incident light during a photoelectric conversion period;a correlated double sampler configured to perform a correlated double sampling operation to extract an effective signal component based on a signal component and a reset component from the unit pixel for at least first and second read-out periods, the correlated double sampler configured to read out an image signal during the first read-out period based on the effective signal component for the first read-out period and to read out a light noise signal during the second read-out period following the first read-out period based on the effective signal component for the second read-out period;an analog-digital converter configured to convert the image signal into a first digital signal and to convert the light noise signal into a second digital signal; andan image compensator configured to generate a compensated image signal based on the second digital signal and the first digital signal.2. The image sensor of claim 1 , further comprising:a controller ...

USER EQUIPMENT AND COMMUNICATION METHOD OF USER EQUIPMENT

Disclosed is a user equipment that supports device-to-device communication. A user equipment according to an embodiment of the present invention comprises: a communication unit for broadcasting a discovery message for informing another user equipment of the user equipment itself, and receiving a discovery message broadcasted from another user equipment; and a control unit for, when at least one discovery message is received, extracting an ID of at least one other user equipment from the at least one received discovery message, selecting at least one ID out of the extracted ID on the basis of status information indicating an importance of the at least one other user equipment, and broadcasting a discovery message including the selected ID. 1. A user equipment that supports direct communication between equipments , comprising: broadcast a discovery message for informing another user equipment of the user equipment itself, and', 'receive a discovery message broadcasted from another user equipment; and, 'a communicator configured to in response to at least one discovery message being received, extract at least one identification (ID) of another user equipment from the at least one received discovery message,', 'select at least one ID from the at least one extracted ID based on status information indicating importance of the another user equipment, and', 'broadcast a discovery message including the at least one selected ID., 'a controller configured to2. The user equipment as claimed in claim 1 , further comprising:a storage configured to store IDs of a plurality of user equipments constituting a group which is provided with service for the direct communication between equipments and status information respectively given to the IDs, retrieve status information given to the at least one extracted ID in the storage, and', 'select at least one ID from the at least one extracted ID based on the retrieved status information., 'wherein the controller is further configured to3. ...

CUTTING INSERT AND CUTTING TOOL ON WHICH SAME IS MOUNTED

A cutting insert of the present invention comprises: an upper surface and a lower surface; first and second lateral surfaces; first and second cutting edge parts; and corner cutting edges, wherein the first cutting edge part includes: a first main cutting edge for forming one end at a portion spaced farthest away from the corner cutting edge; a first sub-cutting edge connected to the corner cutting edge; and a first auxiliary cutting edge for connecting the first main cutting edge and the first sub-cutting edge so as to form a step between the same, and the first sub-cutting edge and the corner cutting edge form one straight line when viewed toward the first lateral surface, and are inclined upward in the direction opposite to the direction toward the lower surface while gradually going in the direction toward the second cutting edge part. 1. A cutting insert comprising an upper surface and a lower surface facing opposite directions to each other , and first and second lateral surfaces connecting between the upper surface and the lower surface and being adjacent to each other , wherein the cutting insert comprises:a first cutting edge part forming a boundary between the upper surface and the first lateral surface;a second cutting edge part forming a boundary between the upper surface and the second lateral surface; anda corner cutting edge connecting the first cutting edge part and the second cutting edge part,wherein the first cutting edge part comprises:a first main cutting edge forming one end at a portion spaced farthest away from the corner cutting edge;a first sub-cutting edge connected to the corner cutting edge; anda first auxiliary cutting edge connecting the first main cutting edge and the first sub-cutting edge so as to form a step therebetween,wherein the first sub-cutting edge and the corner cutting edge, when viewed toward the first lateral surface, form one straight line and are inclined upward in a direction opposite to a direction toward the lower ...

MASK

A mask according to an embodiment comprises: a body having a shape corresponding to a user's face; a first recess disposed on one surface of the body, opposite to the user's face; and a piezoelectric part disposed in the first recess, wherein the first recess has a shape recessed outward from the one surface of the body and is disposed in a region corresponding to at least one of the user's brow region and eye rim regions, and the piezoelectric unit protrudes beyond the one surface toward the user.

Photoelectric conversion device and manufacturing method thereof

Signal transmission method of closed-loop MIMO system

A closed-loop MIMO system includes a receiver for forming a new predefined set by using elements of a previous predefined set, selecting a certain matrix of the new predefined set, and feeding back an index of the matrix, if the number of transmit antennas increases, and a transmitter for performing signal transmission by multiplying the matrix of the feedback index to a transmission signal. Although the number of transmit antennas increases, candidate matrices can be simply obtained by using candidate matrices of a previous set. Moreover, to by proposing a reference for selecting an optimal solution with a small amount of calculation, burden on a system can be considerably reduced.

Display substrate, display apparatus having the display substrate and method for manufacturing the display apparatus

A display apparatus includes a first substrate, a gate line formed on the first substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line formed on the semiconductor layer and including a source electrode, a drain electrode facing the source electrode, a first electrode electrically connected to the drain electrode, in a second substrate facing the first substrate, a second electrode formed on the second substrate, and a liquid crystal layer disposed between the first electrode and the second electrode. At least one of the first and second electrodes includes a plurality of line patterns to polarize incident light.

Method of performing interleaving and data transmission apparatus

A method of performing interleaving and a data transmission apparatus are disclosed, in which interleaving is performed for input data streams using bit reverse ordering (BRO) operation. A method of performing interleaving for input data streams comprises writing respective bits of the input data stream in a row direction of a memory matrix in accordance with the input order, performing row permutation for index of each row of the memory matrix using an R-bit (R is an integer) bit reverse ordering (BRO) operation, performing pruning for a row which satisfies a given condition, performing column permutation using BRO operation for index of each column of the memory matrix, and reading to output each bit in a column direction of the memory matrix where the column permutation has been performed.

Method of retransmitting data in a wireless communication system and apparatus for implementing the same

A method of transmitting data in a wireless communication system is disclosed. More specifically, the method includes receiving a first group index and a second group index, wherein the first group index represents indices of a group having channel power below a specified threshold value and the second index group index represents indices of a group having channel power greater than or equal to the specified threshold value, and transmitting the data after swapping mapping locations of the first group index and the second group index.

Apparatus for processing received signal, method thereof, and method for selecting mapping rule

An apparatus for processing a received signal, method thereof, and mapping rule selecting method are disclosed, by which radio communications can be smoothly carried out in a receiving terminal (200) receiving signals via at least two antennas (201a) in a manner of estimating data accurately. The present invention includes performing transmission according to an adaptively decided mapping rule and demapping on a symbol signal received via the plurality of antennas (201a), extracting reliability information for bit signal obtained from the demapping, and re-performing the demapping on the symbol signal received via the plurality of antennas (201 a) using the reliability information.

Method of generating a parity check matrix for LDPC encoding and decoding

A method of encoding input data using a low density parity check (LDPC) code or decoding the encoded data is disclosed. Each index of a model matrix is expanded to an index matrix which includes two or more indexes. Each index included in the index matrix indicates a specific sub-matrix, and can be replaced with a corresponding sub-matrix to generate a parity check matrix.

Method of producing thin film transistor substrate

A method of producing a thin film transistor substrate to prevent an interconnection from being corroded during a dry etching process includes sequentially forming on an insulating substrate a gate interconnection, a gate insulating layer, an active layer, a conductive layer for a data interconnection, and a photoresist pattern including a first region and a second region, etching the conductive layer for the data interconnection using the photoresist pattern as an etching mask to form a conductive layer pattern for source/drain electrodes, etching the active layer using the photoresist pattern as the etching mask to form an active layer pattern, removing the second region of the photoresist pattern, dry etching the conductive layer pattern for the source/drain electrodes under the second region using the photoresist pattern as the etching mask and etching gas, etching a portion of the active layer pattern using the photoresist pattern as the etching mask, and physically removing the reaction byproduct using a reaction byproduct removal agent so that external force is applied to the etching gas and the reaction byproduct of the conductive layer pattern for the source/drain electrodes.

Adaptive resource allocation method in a wireless communication system and transceiver for implementing the same

Methods of allocating data to a plurality of subcarriers in a wireless communication system are disclosed. More specifically, one of the methods includes receiving feedback information from a receiver, calculating a level of mobility of the receiver using the feedback information, determining a resource allocation scheme to use based on the calculated level of mobility, and allocating the data to the plurality of subcarriers based on the determined resource allocation scheme.

Method of encoding/decoding using low density check code matrix

A method of encoding data using a parity check matrix is disclosed. The method of encoding data using a parity check matrix includes receiving information bit streams, and encoding the information bit streams using the parity check matrix which includes a systematic part and a parity part having a lower triangle type.

Method and apparatus of encoding and decoding data using low density parity check code in a wireless communication system

A method of encoding data using low density parity check (LDPC) code defined by a m×n parity check matrix is disclosed. More specifically, the method includes encoding input source data using the parity check matrix, wherein the parity check matrix comprises a plurality of z×z sub-matrices of which row weights and column weights are ‘0’ or ‘1’.

Method of encoding data using a low density parity check code

Thin film transistor array panel and method for manufacturing the same

A method for manufacturing a TFT array panel including forming a gate line having a gate electrode on a insulating layer, a gate insulating layer on the gate line, a semiconductor on the gate insulating layer, an ohmic contact on the semiconductor, a data line having a source electrode and a drain electrode apart form the source electrode on the ohmic contact, a passivation layer having a contact hole to expose the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole. The drain electrode and the source electrode are formed by a photolithography using a negative photoresist pattern. The negative photoresist pattern includes a first portion having a first thickness corresponding to a channel area, a second portion having a second thickness corresponding to a data line area, and a third portion having a third thickness corresponding to another area.

Display substrate and method of manufacturing the same

Method for transmitting signals for achieving diversity gain

A method for transmitting signals for achieving diversity gain is provided. In a communication system having multiple independent transmission paths, a signal is transmitted by mapping it to different independent transmission paths at initial transmission and at retransmission, thereby obtaining diversity gain. Especially, real and ideal components of a transmission signal are mapped to different transmission paths, thereby obtaining additional gain.

Method and system for providing user interface for device control

A user interface (UI)-providing system and method for device control are provided. The User Interface (UI) providing method, the method includes: identifying at least one controlled devices relating to an activity mode selected by a user; collecting control information relating to functions provided by the identified at least one controlled devices; and generating a UI used to control the at least one controlled devices relating to the activity mode based on the collected control information.

Method of encoding and decoding adaptive to variable code rate using ldpc code

A variable code rate adaptive encoding/decoding method using LDDC code is disclosed, in which an input source data is encoded using the LDPC (low density parity check) code defined by a first parity check matrix configured with a plurality of submatrices. The present invention includes the steps of generating a second parity check matrix corresponding to a code rate by reducing a portion of a plurality of submatrices configuring a first parity check matrix according to the code rate to be applied to encoding an input source data and encoding the input source data using the second parity check matrix.

Encoding and decoding of ldpc codes using structured parity check matrices

CQI coding method for HS-DPCCH

In the channel quality information (CQI) coding method of the present invention, first basis sequences for generating sub-codes of 32 bits are created, and second basis sequences for generating codewords of 20 bits are created using the first basis sequences, the second basis sequence maximizing system throughput such that five information bits are coded into CQI code using the second basis sequences. Also, since HSDPA system has been designed in order to increase the system throughput, the CQI coding method of the present invention, which shows the best system throughput in the simulation, can be the optimum CQI coding scheme for HS-DPCCH.

Solar cell and method of manufacturing the same

A solar cell includes an optical absorption layer; a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; and a transparent electrode layer on the buffer layer, wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface of the buffer layer.

Photoelectric conversion device and manufacturing method thereof

Disclosed herein is a photoelectric conversion device having a semiconductor substrate (10) including a front side and back side, a protective layer (60) formed on the front side of the semiconductor substrate (10), a first non-single crystalline semiconductor layer (20) formed on the back side of the semiconductor substrate, a first conductive layer (30) including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer (20), and a second conductive layer (31) including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer (20).

Method and apparatus for transmitting control information in wireless communication system

A method and apparatus of transmitting control information in a wireless communication system is provided. A sequence corresponding to control information from a sequence set is determined. A reference modulation symbol set corresponding to a mini unit by modulating the sequence is generated. At least one reordered modulation symbol set is generated by reordering and repeating the reference modulation symbol set. The at least one reordered modulation symbol set is reordered in a unit of a subgroup. The reference modulation symbol set and the at least one reordered modulation symbol set are mapped to the plurality of mini units in the resource unit respectively.

Apparatus for processing received signal, method thereof, and method for selecting mapping rule

An apparatus for processing a received signal, method thereof, and mapping rule selecting method are disclosed, by which radio communications can be smoothly carried out in a receiving terminal ( 200 ) receiving signals via at least two antennas ( 201 a ) in a manner of estimating data accurately. The present invention includes performing transmission according to an adaptively decided mapping rule and demapping on a symbol signal received via the plurality of antennas ( 201 a ), extracting reliability information for bit signal obtained from the demapping, and re-performing the demapping on the symbol signal received via the plurality of antennas ( 201 a ) using the reliability information.

Method for performing cooperative transmission in multi-carrier system

There is provided a method for enabling a user equipment to perform cooperative transmission in multi-carrier system. The method includes obtaining a listened signal by listening to a signal transmitted from another user equipment to a base station and transmitting the listened signal to the base station. The signal and the listened signal is allocated to the same subcarriers. By co-operative transmission in multi-carrier system additional time diversity gain and ser diversity gain can be obtained.

Method and apparatus for selecting modulation and coding scheme (MCS) index based on frequency selectivity

A method of selecting a modulation and coding scheme (MCS) index in a wireless communication system is disclosed. More specifically, the method includes measuring a frequency selectivity of a receiving channel, selecting a MCS index having a coding rate below a prescribed coding rate threshold value if the measured frequency selectivity is greater than or equal to a specified frequency selectivity threshold, and selecting the MCS index having the coding rate above or equal to the prescribed coding rate threshold value if the measured frequency selectivity is less than the specified frequency selectivity threshold.

Method for performing ranging procedure

A method for performing a ranging procedure includes transmitting a ranging request message through a randomly selected ranging slot to a base station, the ranging request message comprising a randomly selected ranging code, and receiving a ranging response message including collision information which informs that collision occurs when at least two user equipments transmit the same ranging code to the base station through the same ranging slot. Delay in the ranging can be reduced.

Method of encoding and decoding using low density parity check matrix

A method of encoding and decoding using an LDPC code is disclosed, by which encoding and decoding performance can be enhanced and which can be effectively applied to a communication system employing a variable data rate. In encoding or decoding an input data using a parity check matrix H, the present invention is characterized in that the parity check matrix H has a configuration of H=[H d I H p ] (H is (n−k)×n dimensional, k is a bit number of the input data, and n is a bit number of a codeword), wherein the parity check matrix H includes a first part having a column weight of wc and a second part having a column weight of W c +W a (W a /W c ≠0).

Method and apparatus of encoding and decoding data using low density parity check code in a wireless communication system

A method of encoding data using low density parity check (LDPC) code defined by a m×n parity check matrix is disclosed. More specifically, the method includes encoding input source data using the parity check matrix, wherein the parity check matrix comprises a plurality of z×z sub-matrices of which row weights and column weights are ‘0’ or ‘1’.

Cutting insert

Method of forming electrode and method of manufacturing solar cell using the same

A method of forming an electrode, by which the resistance of the electrode can be reduced, and a method of manufacturing a solar cell using the method of forming an electrode are provided. The electrode forming method includes coating conductive paste on a substrate, forming a metal layer by drying the conductive paste or heating the same at low temperature, and annealing the metal layer by Joule heating using the metal layer by applying an electric field to the metal layer.

Antenna switching method and method for transmitting and receiving signals for the same

A closed-loop antenna switching method, a reference signal allocating method, and a feedback signal transmitting method for the same are disclosed. Namely, by transmitting a reference signal via the plurality of transmitting antennas via the antenna switching for reference signal transmission for each prescribed multiple period of an antenna selection period, efficient antenna index information can be fed back. By setting an antenna switching period to a prescribed multiple of an antenna selection period, it is able to prevent power loss and data decoding performance degradation. And, the present invention includes transmitting a sounding reference signal (SRS) for each band selection period via at least one of the plurality of transmitting antennas and transmitting at least one data demodulation reference signal (DMRS) between the band selection periods via an antenna for not transmitting data by reference signal transmission antenna switching.

Method of manufacturing a display substrate

A method of manufacturing a display substrate includes forming a first metallic pattern including gate and storage conductors and a gate electrode of a switching device on a base substrate, forming a gate insulation layer, forming a second metallic pattern and a channel portion including a source line, source and drain electrodes of the switching device, forming a passivation layer and a photoresist film on the second metallic pattern, patterning the photoresist film to form a first pattern portion corresponding to the gate and source conductors and the switching device, and a second pattern portion formed on the storage line, etching the passivation layer and the gate insulation layer, and forming a pixel electrode using the first pattern portion. Therefore, excessive etching of the stepped portion may be prevented, so that a short-circuit defect between a metallic pattern and a pixel electrode may be prevented.

Cutting insert

System and method for transmitting messages related to operations of electronic devices

A system and method are provided for transmitting messages related to operations of electronic devices. A management apparatus is notified of an event that occurred in a specific one of a plurality of electronic devices. The management apparatus determines one or more target devices in response to notification of the event that occurred in the specific electronic device. An event message corresponding to the event that occurred in the specific electronic device is created. The management apparatus transmits the event message to the one or more target devices. The one or more target devices output the received event message.

Method and apparatus for turbo encoding

Method of encoding/decoding using low density check code matrix

A method of encoding data using a parity check matrix is disclosed. The method of encoding data using a parity check matrix includes receiving information bit streams, and encoding the information bit streams using the parity check matrix which includes a systematic part and a parity part having a lower triangle type.

Signal transmission method of closed-loop MIMO system

A closed-loop MIMO system includes a receiver for forming a new predefined set by using elements of a previous predefined set, selecting a certain matrix of the new predefined set, and feeding back an index of the matrix, if the number of transmit antennas increases, and a transmitter for performing signal transmission by multiplying the matrix of the fedback index to a transmission signal. Although the number of transmit antennas increases, candidate matrices can be simply obtained by using candidate matrices of a previous set. Moreover, by proposing a reference for selecting an optimal solution with a small amount of calculation, burden on a system can be considerably reduced.

Data communication in a wireless communication system using space-time coding

A method of controlling data communication in a wireless communication system comprises measuring channel quality from data received from a base station having multiple antennas, wherein the base station and a mobile station are in a closed loop space-time coding (STC) communication. The method also comprises determining a first weight matrix based on a number of the multiple antennas of the base station, the weight matrix comprising weight elements. The method also comprises determining a second weight matrix from the first weight matrix in response to a predetermined condition, wherein the second weight matrix is associated with controlling data output using the multiple antennas of the base station for subsequent transmission. The method also comprises providing a number of STC outputs to the base station, wherein the number of STC outputs is associated with the second weight matrix.