GAS SENSOR WITH INTEGRATED OPTICS AND REFERENCE CELL

A method of fabricating a gas sensor on a substrate and a gas sensor fabricated on a substrate that includes optical and electronic components are described. The method includes fabricating a laser to output light over a range of wavelengths within a waveguide, fabricating a splitter to split the light output by the laser to a reference waveguide and to a detection waveguide, fabricating a reference cell to house the reference waveguide and a reference gas. An output of the reference waveguide is coupled to a first optical detector and an output of the detection waveguide is coupled to a second optical detector to identify or quantify an ambient gas. 1. A method of fabricating a gas sensor on a substrate , the method comprising:fabricating a laser to output light over a range of wavelengths within a waveguide;fabricating a splitter to split the light output by the laser to a reference waveguide and to a detection waveguide;fabricating a reference cell to house the reference waveguide and a reference gas, wherein an output of the reference waveguide is coupled to a first optical detector and an output of the detection waveguide is coupled to a second optical detector to identify or quantify an ambient gas.2. The method according to claim 1 , wherein the fabricating the laser includes fabricating the laser on a III-V die and fabricating the laser to be wavelength-adjustable.3. The method according to claim 2 , further comprising fabricating the first optical detector and the second optical detector on the III-V die.4. The method according to claim 2 , further comprising arranging optical couplers on the III-V die and on the substrate.5. The method according to claim 1 , wherein the fabricating the reference cell includes defining a volume of the reference cell cavity with back-end layers and a dielectric layer.6. The method according to claim 5 , further comprising forming a sealing liner over the back-end layers.7. The method according to claim 5 , further comprising ...

Low-Loss Large-Grain Optical Waveguide For Interconnecting Components Integrated On A Glass Substrate

Embodiments are directed to a coupler system having an interposer configured to couple optical signals. The interposer includes at least one optoelectronic component formed on a glass substrate. The interposer further includes at least one waveguide formed on the glass substrate and configured to couple the optical signals to or from the at least one optoelectronic component, wherein the at least one waveguide comprises a waveguide material having grain diameters greater than about one micron and an optical loss less than about one decibel per centimeter of optical propagation.

Integrated microwave-to-optical single-photon transducer with strain-induced electro-optic material

Transducers and methods of making the same include a substrate having a cavity with a diameter that supports whispering gallery modes at a frequency of an input signal. A focusing structure in the cavity focuses the electric field of the input signal. A resonator directly under the focusing structure has a crystalline structure that generates an electro-optic effect when exposed to electrical fields. An electric field of the input signal modulates an output signal in the resonator via the electro-optic effect.

Gas sensor with integrated optics and reference cell

A method of fabricating a gas sensor on a substrate and a gas sensor fabricated on a substrate that includes optical and electronic components are described. The method includes fabricating a laser to output light over a range of wavelengths within a waveguide, fabricating a splitter to split the light output by the laser to a reference waveguide and to a detection waveguide, fabricating a reference cell to house the reference waveguide and a reference gas. An output of the reference waveguide is coupled to a first optical detector and an output of the detection waveguide is coupled to a second optical detector to identify or quantify an ambient gas.

Low-loss large-grain optical waveguide for interconnecting components integrated on a glass substrate

Embodiments are directed to a coupler system having an interposer configured to couple optical signals. The interposer includes at least one optoelectronic component formed on a glass substrate. The interposer further includes at least one waveguide formed on the glass substrate and configured to couple the optical signals to or from the at least one optoelectronic component, wherein the at least one waveguide comprises a waveguide material having grain diameters greater than about one micron and an optical loss less than about one decibel per centimeter of optical propagation.

External cavity laser based wavelength division multiplexing superchannel transceivers

A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer.

REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

Reducing dark current in germanium photodiodes by electrical over-stress

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

INTEGRATED MICROWAVE-TO-OPTICAL SINGLE-PHOTON TRANSDUCER WITH STRAIN-INDUCED ELECTRO-OPTIC MATERIAL

Transducers and methods of making the same include a substrate having a cavity with a diameter that supports whispering gallery modes at a frequency of an input signal. A focusing structure in the cavity focuses the electric field of the input signal. A resonator directly under the focusing structure has a crystalline structure that generates an electro-optic effect when exposed to electrical fields. An electric field of the input signal modulates an output signal in the resonator via the electro-optic effect. 1. A method for forming a transducer , comprising:fabricating a resonator on a first substrate, resonant at a first frequency, by depositing a straining material on a resonator material to strain a crystalline structure of the resonator material to generate an electro-optic effect when exposed to electrical fields;fabricating a second substrate having a cavity with a diameter that supports whispering gallery modes at a second frequency; andaligning the second substrate over the first substrate such that a focusing structure in the microwave cavity aligns with the optical resonator.2. The method of claim 1 , wherein fabricating the resonator comprises:patterning the resonator to form grooves; anddepositing the straining material in the grooves.3. The method of claim 1 , wherein the depositing the straining material includes depositing silicon germanium in the grooves.4. The method of claim 1 , wherein fabricating the second substrate having the cavity includes forming a cylindrical cavity such that the focusing structure is a center pin that is coaxial with the cylindrical cavity.5. The method of claim 1 , further comprising depositing a superconducting film in the cavity.6. The method of claim 5 , wherein depositing the superconducting film in the cavity includes depositing the superconducting film directly on an inner surface of the cavity and on an outer surface of the focusing structure.7. The method of claim 1 , further comprising forming a ridge on an ...

Gas sensor with integrated optics and reference cell

A method of fabricating a gas sensor on a substrate and a gas sensor fabricated on a substrate that includes optical and electronic components are described. The method includes fabricating a laser to output light over a range of wavelengths within a waveguide, fabricating a splitter to split the light output by the laser to a reference waveguide and to a detection waveguide, fabricating a reference cell to house the reference waveguide and a reference gas. An output of the reference waveguide is coupled to a first optical detector and an output of the detection waveguide is coupled to a second optical detector to identify or quantify an ambient gas.

Temperature insensitive external cavity lasers on silicon

A technique related to a semiconductor chip is provided. An optical gain chip is attached to a semiconductor substrate. An integrated photonic circuit is on the semiconductor substrate, and the optical gain chip is optically coupled to the integrated photonic circuit thereby forming a laser cavity. The integrated photonic circuit includes an active intra-cavity thermo-optic optical phase tuner element, an intra-cavity optical band-pass filter, and an output coupler band-reflect optical grating filter with passive phase compensation. The active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and the output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.

Germanium Photodetector with SOI Doping Source

Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe. 115-. (canceled)16. A photodetector , comprising:a semiconductor layer including a silicon (Si) portion and an n-type silicon germanium (SiGe) portion;a SiGe layer including an alternating sequence of n+-type SiGe and p-type SiGe;a barrier layer separating the semiconductor layer from the SiGe layer;a crystallization window in the barrier layer, wherein the SiGe layer contacts the n-type SiGe portion of the semiconductor layer in the crystallization window in the barrier layer; anda plurality of metal contacts to the SiGe layer.17. The photodetector of claim 16 , wherein the n-type SiGe portion of the semiconductor layer comprises about 99% Si and about 1% Ge.18. The photodetector of claim 16 , wherein the SiGe layer comprises about 50% Ge and about 50% Si.19. (canceled)20. The photodetector of claim 16 , wherein the crystallization window has a width from about 0.2 μm to about 1.0 μm. The subject matter disclosed herein relates to integrated circuits. More particularly, the subject matter relates to a germanium (Ge) photodetector with a silicon-on-insulator (SOI) doping source.Germanium (Ge) photodetectors are often used in a silicon photonics platform for receiving light from optical fibers or other on-chip light sources and converting the light to an electrical current. To receive optical signals with high signal to noise ratio, the dark current of a Ge photodetector is required to be low (typically ˜1 μA). To this extent, reduction of dark current in Ge photodetectors is desirable.A first aspect is directed to a method for ...

Self-clocked low noise photoreceiver (SCLNP)

A photoreceiver device includes a light detector connected between a power supply node and a first node, and first to third switching elements. The light detector is configured to detect an incident optical data signal, and to output photocurrent corresponding to a magnitude of the optical data signal through the first node. The first switching element is connected between the first node and a ground node. The second switching element is connected between the power supply node and a second node. The third switching element is connected between the second node and the ground node. The third switching element has a control node connected to the first node.

EXTERNAL CAVITY LASER BASED WAVELENGTH DIVISION MULTIPLEXING SUPERCHANNEL TRANSCEIVERS

A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer. 1. A semiconductor chip configured as a receiver to receive a superchannel , the semiconductor chip comprising:a polarization splitter rotator configured to receive and split received light of the superchannel;wavelength division multiplexing (WDM) demultiplexers configured to demultiplex the received light; andcounter propagating drop filters configured to capture the received light at a particular target wavelength and generate an electrical signal;wherein each of the counter propagating drop filters is coupled to an electrical receiver, the electrical receiver receives the electrical signal corresponding to the particular target wavelength.2. The semiconductor chip of claim 1 , wherein the counter propagating drop filters comprise a ring resonator configured to capture the received light at the particular target wavelength from a waveguide.3. The semiconductor chip of claim 2 , wherein the counter propagating drop filters each comprise a photodiode that converts the received light at the particular wavelength into the electrical signal that is sent to the electrical receiver.4. ...

GAS SENSOR WITH INTEGRATED OPTICS AND REFERENCE CELL

A method of fabricating a gas sensor on a substrate and a gas sensor fabricated on a substrate that includes optical and electronic components are described. The method includes fabricating a laser to output light over a range of wavelengths within a waveguide, fabricating a splitter to split the light output by the laser to a reference waveguide and to a detection waveguide, fabricating a reference cell to house the reference waveguide and a reference gas. An output of the reference waveguide is coupled to a first optical detector and an output of the detection waveguide is coupled to a second optical detector to identify or quantify an ambient gas. 1a laser configured to output light in a range of wavelengths within a waveguide;a splitter configured to split the light output by the laser to a reference waveguide and to a detection waveguide;the reference waveguide configured to expose the light to a reference gas and output a reference light, wherein the reference light exhibits a change in intensity from the light at wavelengths corresponding with an absorption spectrum of the reference gas;a reference cell configured to hermetically seal the reference gas and house the reference waveguide, the reference cell including back-end layers that include electrical circuits, a dielectric layer that is transparent to the light, and a sealing liner over the back-end layers, a volume of the reference cell being defined by a thickness of the back-end layers and a thickness of the dielectric layer;the detection waveguide configured to expose the light to ambient gas; andfirst and second optical detectors configured to receive light output from the reference waveguide and the detection waveguide, respectively, wherein the laser and the first and second optical detectors are arranged on a III-V die, the ambient gas is identified based on outputs of the first detector and the second detector, and the laser is tuned based on an absorption wavelength of the reference gas.. A gas ...

Reducing dark current in germanium photodiodes by electrical over-stress

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.

Germanium photodetector with SOI doping source

Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.

INTEGRATED MICROWAVE-TO-OPTICAL SINGLE-PHOTON TRANSDUCER WITH STRAIN-INDUCED ELECTRO-OPTIC MATERIAL

Transducers and methods of making the same include a substrate having a cavity with a diameter that supports whispering gallery modes at a frequency of an input signal. A focusing structure in the cavity focuses the electric field of the input signal. A resonator directly under the focusing structure has a crystalline structure that generates an electro-optic effect when exposed to electrical fields. An electric field of the input signal modulates an output signal in the resonator via the electro-optic effect. 1. A transducer , comprising:a substrate having a cavity with a diameter that supports whispering gallery modes at a frequency of an input signal;a focusing structure in the cavity configured to focus an electric of the input signal; anda resonator directly under the focusing structure, having a crystalline structure that generates an electro-optic effect when exposed to electrical fields, wherein an electric field of the input signal modulates an output signal in the resonator via the electro-optic effect.2. The transducer of claim 1 , wherein the cavity is cylindrical and the focusing structure is a center pin that is coaxial with the cavity.3. The transducer of claim 1 , further comprising a superconducting film that is formed directly on an inner surface of the cavity and on an outer surface of the focusing structure.4. The transducer of claim 1 , wherein the resonator is formed from a first material having grooves in a top surface with a second material formed in the grooves claim 1 , wherein the second material creates a strain in a crystalline structure of the first material to generate the electro-optic effect in the resonator.5. The transducer of claim 4 , wherein the resonator comprises an optical disc structure.6. The transducer of claim 4 , wherein the resonator comprises an optical ring structure.7. The transducer of claim 1 , wherein the focusing structure is a cylindrical pin comprising a surface facing toward the resonator claim 1 , the surface ...

Germanium Photodetector with SOI Doping Source

Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe. 1. A method for forming a photodetector , comprising:forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; andannealing the structure to convert, via the crystallization window, the Ge to a first composition of graded silicon germanium (SiGe) and the doped Si to a second composition of graded SiGe.2. The method of claim 1 , wherein the annealing causes a melting of the Ge layer.3. The method of claim 2 , wherein Ge diffuses from the melted Ge layer through the crystallization window into the doped Si layer to form the second composition of SiGe.4. The method of claim 3 , wherein the second composition of SiGe comprises about 50% Si and about 50% Ge.5. The method of claim 2 , wherein Si and dopant diffuse from the doped Si layer through the crystallization window into the melted Ge layer to form the first composition of SiGe.6. The method of claim 5 , wherein the first composition of SiGe comprises about 99% Ge and about 1% Si.7. The method of claim 1 , wherein the doped Si layer includes an n-type dopant.8. The method of claim 1 , further comprising doping the first composition of SiGe with a p-type dopant and an n+-type dopant in an alternating sequence.9. The method of claim 1 , further comprising cooling the structure to crystalize the first composition of SiGe and the second composition of SiGe.10. The method of claim 1 , further comprising forming a plurality of contacts to the first composition of ...

Gas sensor with integrated optics and reference cell

A method of fabricating a gas sensor on a substrate and a gas sensor fabricated on a substrate that includes optical and electronic components are described. The method includes fabricating a laser to output light over a range of wavelengths within a waveguide, fabricating a splitter to split the light output by the laser to a reference waveguide and to a detection waveguide, fabricating a reference cell to house the reference waveguide and a reference gas. An output of the reference waveguide is coupled to a first optical detector and an output of the detection waveguide is coupled to a second optical detector to identify or quantify an ambient gas.

Continuous evanescent perturbation gratings in a silicon photonic device

A method of fabricating a silicon photonic device and a system including a silicon photonic device are described. The method includes forming a photoresist layer on a silicon layer and patterning a mask formed on the photoresist layer. The patterning defines a primary optical waveguide region, a first evanescent perturbation grating region on a first side of the primary optical waveguide region and a second evanescent perturbation grating region on a second side, opposite the first side, of the primary optical waveguide. The first evanescent perturbation grating region and the second evanescent perturbation grating region are defined as continuous regions along a length of the silicon photonic device. The method also includes etching the photoresist layer and the silicon layer according to a pattern of the patterned mask.

Remote Authentication Through Reconfigurable Boson Samplers

Techniques for remote authentication using reconfigurable boson samplers are provided. In one aspect, a method for remote authentication includes the steps of: providing an input photon configuration for an optical transmission network; receiving a response including measured output quantum photon coincidence frequencies from the optical transmission network based on the input photon configuration; comparing the measured output quantum photon coincidence frequencies to output quantum photon coincidence probabilities calculated for the optical transmission network; and verifying the response if the measured output quantum photon coincidence frequencies matches the output quantum photon coincidence probabilities calculated for the optical transmission network with less than a predetermined level of error, otherwise un-verifying the response. A verification system including an optical transmission network is also provided. 1. A method for remote authentication , comprising the steps of:providing an input photon configuration for an optical transmission network;receiving a response comprising measured output quantum photon coincidence frequencies from the optical transmission network based on the input photon configuration;comparing the measured output quantum photon coincidence frequencies to output quantum photon coincidence probabilities calculated for the optical transmission network; andverifying the response if the measured output quantum photon coincidence frequencies matches the output quantum photon coincidence probabilities calculated for the optical transmission network with less than a predetermined level of error, otherwise un-verifying the response.2. The method of claim 1 , wherein the response further comprises an n-most frequent output photon coincidences.3. The method of claim 1 , further comprising the step of:calculating the output quantum photon coincidence probabilities for the optical transmission network utilizing public classical optical ...

INTEGRATED MICROWAVE-TO-OPTICAL SINGLE-PHOTON TRANSDUCER WITH STRAIN-INDUCED ELECTRO-OPTIC MATERIAL

Transducers and methods of making the same include a substrate having a cavity with a diameter that supports whispering gallery modes at a frequency of an input signal. A focusing structure in the cavity focuses the electric field of the input signal. A resonator directly under the focusing structure has a crystalline structure that generates an electro-optic effect when exposed to electrical fields. An electric field of the input signal modulates an output signal in the resonator via the electro-optic effect. 1. A quantum computing device , comprising:a qubit configured to provide a first signal at a first frequency; a substrate having a cylindrical cavity with a diameter that supports whispering gallery modes at the first frequency;', 'a central pin in the cavity; and', 'a resonator directly under the central pin, having a crystalline structure that generates an electro-optic effect when exposed to electrical fields, wherein an electric field of the input signal modulates a second signal at a second frequency in the resonator via the electro-optic effect; and, 'a transducer coupled to the qubit, comprisinga waveguide, optically coupled to the resonator, that is configured to convey the modulated second signal away from the resonator.2. The quantum computing device of claim 1 , wherein the transducer further comprises a superconducting film that is formed directly on an inner surface of the cavity and on an outer surface of the central pin.3. The quantum computing device of claim 1 , wherein the resonator is formed from a first material having grooves in a top surface with a second material formed in the grooves claim 1 , wherein the second material creates a strain in a crystalline structure of the first material to generate the electro-optic effect in the resonator.4. The quantum computing device of claim 3 , wherein the resonator comprises an optical disc structure.5. The quantum computing device of claim 3 , wherein the resonator comprises an optical ring ...

External cavity laser based wavelength division multiplexing superchannel transceivers

A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer.

REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.

CONTINUOUS EVANESCENT PERTURBATION GRATINGS IN A SILICON PHOTONIC DEVICE

A method of fabricating a silicon photonic device and a system including a silicon photonic device are described. The method includes forming a photoresist layer on a silicon layer and patterning a mask formed on the photoresist layer. The patterning defines a primary optical waveguide region, a first evanescent perturbation grating region on a first side of the primary optical waveguide region and a second evanescent perturbation grating region on a second side, opposite the first side, of the primary optical waveguide. The first evanescent perturbation grating region and the second evanescent perturbation grating region are defined as continuous regions along a length of the silicon photonic device. The method also includes etching the photoresist layer and the silicon layer according to a pattern of the patterned mask. 1. An optical system , comprising:an incident light source; and a primary optical waveguide region;', 'a first evanescent perturbation grating region on a first side of the primary optical region; and', 'a second evanescent perturbation grating region on a second side, opposite the first side, of the primary optical region, wherein the first evanescent perturbation grating region and the second evanescent perturbation grating region are formed as continuous features in a same silicon layer as the primary optical waveguide region, wherein the primary optical waveguide region, the first evanescent perturbation grating region, and the second evanescent perturbation grating region are physically separated from each other., 'a silicon photonic device, comprising2. The system according to claim 1 , wherein the first evanescent perturbation grating region or the second evanescent perturbation grating region is fabricated to include a sawtooth pattern that includes a toothed side and a solid side.3. The system according to claim 2 , wherein the toothed side is closer to the primary optical waveguide region.4. The system according to claim 2 , wherein the ...

EXTERNAL CAVITY LASER BASED WAVELENGTH DIVISION MULTIPLEXING SUPERCHANNEL TRANSCEIVERS

A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer. 1. A method of creating a superchannel on a semiconductor chip , comprising:forming a plurality of laser cavities including a first laser cavity, a next laser cavity, through a last laser cavity;providing a plurality of modulators including a first modulator, a next modulator, through a last modulator, each of the plurality of modulators having a direct input, an add port, and an output;configuring a concatenated arrangement of the plurality of laser cavities to form a superchannel, the concatenated arrangement including:the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator;the next laser cavity coupled to the direct input of the next modulator, and the output of the next modulator coupled to the add port of the first modulator; andthe first laser cavity coupled to the direct input of the first modulator, and the output of the first modulator coupled to one input of a wavelength division multiplexing (WDM) multiplexer, thus forming the superchannel being input into the one input ...

Temperature insensitive external cavity lasers on silicon

A technique related to a semiconductor chip is provided. An optical gain chip is attached to a semiconductor substrate. An integrated photonic circuit is on the semiconductor substrate, and the optical gain chip is optically coupled to the integrated photonic circuit thereby forming a laser cavity. The integrated photonic circuit includes an active intra-cavity thermo-optic optical phase tuner element, an intra-cavity optical band-pass filter, and an output coupler band-reflect optical grating filter with passive phase compensation. The active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and the output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.

REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

External cavity laser based wavelength division multiplexing superchannel transceivers

A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer.

Germanium photodetector with SOI doping source

Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.

EXTERNAL CAVITY LASER BASED WAVELENGTH DIVISION MULTIPLEXING SUPERCHANNEL TRANSCEIVERS

A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer.

TEMPERATURE INSENSITIVE EXTERNAL CAVITY LASERS ON SILICON

A technique related to a semiconductor chip is provided. An optical gain chip is attached to a semiconductor substrate. An integrated photonic circuit is on the semiconductor substrate, and the optical gain chip is optically coupled to the integrated photonic circuit thereby forming a laser cavity. The integrated photonic circuit includes an active intra-cavity thermo-optic optical phase tuner element, an intra-cavity optical band-pass filter, and an output coupler band-reflect optical grating filter with passive phase compensation. The active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and the output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together. 1. A method of configuring a semiconductor , the method comprising:providing a light source relative to a semiconductor substrate; andproviding a circuit on the semiconductor substrate, the light source optically coupled to the circuit thereby forming a laser cavity, wherein the circuit includes an active intra-cavity thermo-optic optical phase tuner element coupled to an output coupler band-reflect optical grating filter with passive phase compensation.2. The method of claim 1 , wherein the circuit further includes an intra-cavity optical band-pass filter.3. The method of claim 2 , wherein the active intra-cavity thermo-optic optical phase tuner element claim 2 , the intra-cavity optical band-pass filter claim 2 , and output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.4. The method of claim 1 , wherein the light source is an optical gain device.5. The method of claim 1 , wherein the semiconductor is a semiconductor chip.6. The method of claim 1 , further comprising coupling a mode converter between the light source and the circuit.7. The method of claim 1 , wherein the output coupler band-reflect optical grating filter with passive phase ...

Integrated microwave-to-optical single-photon transducer with strain-induced electro-optic material

Transducers and methods of making the same include a substrate having a cavity with a diameter that supports whispering gallery modes at a frequency of an input signal. A focusing structure in the cavity focuses the electric field of the input signal. A resonator directly under the focusing structure has a crystalline structure that generates an electro-optic effect when exposed to electrical fields. An electric field of the input signal modulates an output signal in the resonator via the electro-optic effect.

GAS SENSOR WITH INTEGRATED OPTICS AND REFERENCE CELL

A method of fabricating a gas sensor on a substrate and a gas sensor fabricated on a substrate that includes optical and electronic components are described. The method includes fabricating a laser to output light over a range of wavelengths within a waveguide, fabricating a splitter to split the light output by the laser to a reference waveguide and to a detection waveguide, fabricating a reference cell to house the reference waveguide and a reference gas. An output of the reference waveguide is coupled to a first optical detector and an output of the detection waveguide is coupled to a second optical detector to identify or quantify an ambient gas.

Integrated microwave-to-optical single-photon transducer with strain-induced electro-optic material

Transducers and methods of making the same include a substrate having a cavity with a diameter that supports whispering gallery modes at a frequency of an input signal. A focusing structure in the cavity focuses the electric field of the input signal. A resonator directly under the focusing structure has a crystalline structure that generates an electro-optic effect when exposed to electrical fields. An electric field of the input signal modulates an output signal in the resonator via the electro-optic effect.

Low-loss large-grain optical waveguide for interconnecting components integrated on a glass substrate

Embodiments are directed to a coupler system having an interposer configured to couple optical signals. The interposer includes at least one optoelectronic component formed on a glass substrate. The interposer further includes at least one waveguide formed on the glass substrate and configured to couple the optical signals to or from the at least one optoelectronic component, wherein the at least one waveguide comprises a waveguide material having grain diameters greater than about one micron and an optical loss less than about one decibel per centimeter of optical propagation.

Read out of quantum states of microwave frequency qubits with optical frequency photons

Techniques relate to reading a qubit coupled to a microwave resonator. A microwave signal at a microwave resonator frequency is input to the microwave resonator that couples to the qubit. A microwave readout signal from the microwave resonator is output to a microwave to optical converter. The microwave readout signal includes a qubit state of the qubit. The microwave to optical converter is configured to convert the microwave readout signal to an optical signal. In response to the optical signal being output by the microwave to optical converter, it is determined that the qubit is in a predefined qubit state. In response to no optical signal being output by the microwave to optical converter, it is determined that the qubit is not in the predefined qubit state.

Single edge coupling of chips with integrated waveguides

Techniques are provided for single edge coupling of chips with integrated waveguides. For example, a package structure includes a first chip with a first critical edge, and a second chip with a second critical edge. The first and second chips include integrated waveguides with end portions that terminate on the first and second critical edges. The second chip includes a signal reflection structure that is configured to reflect an optical signal propagating in one or more of the integrated waveguides of the second chip. The first and second chips are edge-coupled at the first and second critical edges such that the end portions of the integrated waveguides of the first and second chips are aligned to each other, and wherein all signal input/output between the first and second chips occurs at the single edge-coupled interface.

Efficient photonic circuits for liquid-cooled high-density datacenters

Photonic circuits are disclosed having an efficient optical power distribution network. Laser chips (InP) having different wavelengths are flip-chip assembled near the center of a silicon photonic chip. Each InP die has multiple optical lanes, but a given die has only one wavelength. Waveguides formed in the photonic chip are optically connected to the lanes, and fan out to form multiple waveguide sets, where each waveguide set has one of the waveguides from each of the different wavelengths, i.e., one waveguide from each InP die. The waveguide network is optimized to minimize the number of crossings that any given waveguide may have, and no waveguide having a particular wavelength crosses another waveguide of the same wavelength. The unique arrangements of light sources and waveguides allows the use of a smaller number of more intense laser sources, particularly in applications such as performance-optimized datacenters where liquid cooling systems may be leveraged.

Self-alignment features for iii-v ridge process and angled facet die

A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

Intracavity Grating to Suppress Single Order of Ring Resonator

Microwave-to-optical transducers in an optical ring resonator having intracavity grating to split a single resonance order are provided. In one aspect, a microwave-to-optical transducer includes: an optical ring resonator with intracavity grating; and a microwave signal waveguide optically coupled to the optical ring resonator with the intracavity grating. Microwave-to-optical transducers having multiple pump photon optical ring resonators and multiple signal photon optical ring resonators optically coupled to the optical ring resonator with the intracavity grating are also provided, as is a method of forming a microwave-to-optical transducer, and a method for microwave-optical transduction. 1. A microwave-to-optical transducer , comprising:an optical ring resonator with an intracavity grating comprising a core and an evanescent feature adjacent to the core;an input pump photon waveguide for carrying optical input photons towards the optical ring resonator with the intracavity grating; anda microwave signal waveguide for carrying microwave input photons towards the optical ring resonator with the intracavity grating.2. (canceled)3. The microwave-to-optical transducer of claim 1 , wherein the evanescent feature comprises:a base portion; anda width modulation portion having a width that modulates continuously along a surface of the base portion facing the core to form the intracavity grating.4. The microwave-to-optical transducer of claim 3 , wherein the intracavity grating has a sawtooth pattern.5. The microwave-to-optical transducer of claim 3 , wherein the core and the evanescent feature are surrounded by a cladding material.6. The microwave-to-optical transducer of claim 5 , wherein the core and the evanescent feature comprise silicon germanium (SiGe) claim 5 , and wherein the cladding material comprises silicon (Si).7. The microwave-to-optical transducer of claim 1 , wherein the optical ring resonator with the intracavity grating and the microwave signal ...

Reducing dark current in germanium photodiodes by electrical over-stress

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode. A control system is configured to trigger the reverse bias voltage source to increase the reverse bias voltage.

SELF-CLOCKED LOW NOISE PHOTORECEIVER (SCLNP)

A photoreceiver device includes a light detector connected between a power supply node and a first node, and first to third switching elements. The light detector is configured to detect an incident optical data signal, and to output photocurrent corresponding to a magnitude of the optical data signal through the first node. The first switching element is connected between the first node and a ground node. The second switching element is connected between the power supply node and a second node. The third switching element is connected between the second node and the ground node. The third switching element has a control node connected to the first node. 1. A photoreceiver device , comprising:a first switching element, prior to receipt of an optical data signal, configured to be switched on in response to a first control signal to pull down a first node of the first switching element, wherein a second node of the first switching element is coupled to a ground node;a second switching element, prior to receipt of the optical data signal, configured to be switched on, in response to a second control signal, to pull up a first node of the second switching element, wherein a second node of the second switching element is coupled to a power supply node;a light detector configured to receive the optical data signal, generate photocurrent corresponding to a magnitude of the optical data signal, and output the generated photocurrent through the first node of the first switching element; anda third switching element configured to be switched on, in response to a first magnitude of the photocurrent, to pull down the first node of the second switching element in response to a first magnitude of the photocurrent, wherein the first magnitude is more than a threshold voltage of the third switching element.2. The device of claim 1 , wherein each of the first to third switching elements is a transistor.3. The device of claim 2 , wherein each of the first and third switching elements ...

ACTIVE ELECTRO-OPTIC QUANTUM TRANSDUCERS COMPRISING RESONATORS WITH SWITCHABLE NONLINEARITIES

A quantum transducer device that comprises a microwave resonator component and optical resonator component that receives and transduce a set of optical photons and at least one of: a voltage pulse or modulated laser pulse, and generate a single microwave photon output. 1. A quantum transducer device comprising:a microwave resonator, and a voltage pulse applied to the microwave resonator, or', 'a modulated laser pulse applied to the optical resonator., 'an optical resonator interacting with the microwave resonator that transduces single optical photons to single microwave photons, wherein the transducing occurs based on at least one of2. The device of claim 1 , further comprising a tuning component that comprises nonlinear optical material that can be selectively switched on or off with a voltage to mitigate critical coupling requirement.3. The system of claim 2 , wherein an effective χnonlinear susceptibility is selectively switched on by the voltage.4. The system of claim 2 , wherein an effective χnonlinear susceptibility is selectively switched off once the transduction is complete.5. The system of claim 2 , wherein the nonlinear optical material comprises a centrosymmetric material with a strong third-order nonlinear susceptibility (χ).6. The system of claim 2 , wherein the optical material comprises a nonzero χin equilibrium.7. The system of claim 1 , further comprising an optical resonator claim 1 , pumped by a laser claim 1 , gated with a modulator.8. The system of claim 1 , wherein the microwave resonator component is coupled to a pulsed voltage power supply through a switch and an inductor.9. The system of claim 8 , further comprising an LC band-pass filter that can be tuned to the bandwidth of the voltage pulse.10. A quantum transducer device comprising:a microwave resonator; and a voltage pulse applied to the microwave resonator, or', 'a modulated laser pulse applied to the optical resonator., 'an optical resonator interacting with the microwave resonator ...

Self-clocked low noise photoreceiver (sclnp)

A photoreceiver device includes a light detector connected between a power supply node and a first node, and first to third switching elements. The light detector is configured to detect an incident optical data signal, and to output photocurrent corresponding to a magnitude of the optical data signal through the first node. The first switching element is connected between the first node and a ground node. The second switching element is connected between the power supply node and a second node. The third switching element is connected between the second node and the ground node. The third switching element has a control node connected to the first node.

QUANTUM TRANSDUCERS WITH EMBEDDED OPTICAL RESONATORS

Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a superconducting microwave resonator having a microstrip architecture that includes a dielectric layer positioned between a superconducting waveguide and a ground plane. The apparatus can also include an optical resonator positioned within the dielectric layer. 1. An apparatus comprising:a superconducting microwave resonator having a microstrip architecture that includes a dielectric substrate positioned between a superconducting waveguide and a ground plane; andan optical resonator positioned within the dielectric substrate.2. The apparatus of claim 1 , wherein the superconducting waveguide and the ground plane comprise at least one element selected from the group consisting of niobium claim 1 , niobium nitride claim 1 , and titanium nitride.3. The apparatus of claim 2 , wherein the dielectric substrate comprises at least one element selected from the group consisting of silicon claim 2 , sapphire claim 2 , and garnet.4. The apparatus of claim 3 , wherein the optical resonator includes an optical waveguide that comprises at least one material selected from the group consisting of silicon germanium claim 3 , lithium niobate claim 3 , and aluminum nitride.5. The apparatus of claim 1 , wherein the dielectric substrate is positioned between the superconducting waveguide and the optical resonator claim 1 , and wherein the dielectric substrate is further positioned between the ground plane and the optical resonator.6. The apparatus of claim 1 , further comprising a second ground plane that is co-planer with the superconducting waveguide and positioned on the dielectric substrate.7. The apparatus of claim 6 , wherein the second ground plane comprises at least one element selected from the group consisting of niobium claim 6 , niobium nitride claim 6 , and titanium nitride.8. The apparatus of claim 6 , wherein the ...

Quantum device with low surface losses

Circuits and methods of operation that can facilitate reducing surface losses for quantum devices are provided. In one example, a quantum device can comprise a dielectric layer, a first electrode, and a second electrode. The dielectric layer can comprise a recess formed in a surface of the dielectric layer that reduces a thickness of the dielectric layer from a first thickness external to a footprint of the recess to a second thickness within the footprint of the recess. The second thickness can be less than the first thickness. The first electrode can be positioned within the footprint of the recess. The second electrode can be electrically isolated from the first electrode by the dielectric layer. The first and second electrodes can be positioned on opposing surfaces of the dielectric layer.

FLIP CHIP INTEGRATION ON QUBIT CHIPS

A quantum bit (qubit) flip chip assembly may be formed when a qubit it formed on a first chip and an optically transmissive path is formed on a second chip. The two chips may be bonded using solder bumps. The optically transmissive path may provide optical access to the qubit on the first chip. 1. A method for forming a quantum bit (qubit) flip-chip assembly , the method comprising:forming a qubit on a first chip;forming an optically transmissive path in a second chip; andbonding the first chip to the second chip; andwherein the optically transmissive path is located above the qubit.2. The method of claim 1 , wherein the path has an aperture with a diameter large enough to allow for treatment of the qubit.3. The method of claim 1 , wherein the optically transmissive path has an aperture of 100 microns or less.4. The method of claim 1 , further comprising laser annealing the qubit by applying a laser through a surface of the qubit chip that is opposite the second chip.5. The method of claim 1 , further comprising ion etching the qubit.6. The method of claim 1 , wherein the forming the optically transmissive path comprises drilling claim 1 , using a high-power laser beam claim 1 , the second chip to form a through-hole in the second chip.7. The method of claim 1 , wherein the forming the optically transmissive path comprises etching a through-hole in the second chip.8. The method of claim 6 , wherein the etching comprises deep-reactive ion etching.9. The method of claim 6 , wherein the etching comprises a chemical etch claim 6 , and wherein the chemical etch is a tetramethylammonium hydroxide (TMAH) etch.10. The method of claim 1 , wherein the second chip comprises a transparent substrate.11. The method of claim 10 , wherein the transparent substrate is Magnesiumoxide (MgO).12. A flip chip apparatus comprising:a first chip comprising a qubit;a second chip bonded to the first chip, wherein the first chip and the second chip are bonded by a plurality of solder bumps; ...

FLIP CHIP INTEGRATION ON QUBIT CHIPS

A quantum bit (qubit) flip chip assembly may be formed when a qubit it formed on a first chip and an optically transmissive path is formed on a second chip. The two chips may be bonded. The optically transmissive path may provide optical access to the qubit on the first chip. 1. A method for forming a quantum bit (qubit) flip-chip assembly , the method comprising:forming a qubit on a first chip;forming an optically transmissive path in a second chip; andbonding the first chip to the second chip; andwherein the optically transmissive path is located adjacent to the qubit.2. The method of claim 1 , wherein the path has an aperture with a diameter large enough to allow for treatment of the qubit.3. The method of claim 1 , wherein the optically transmissive path has an aperture of 100 microns or less.4. The method of claim 1 , further comprising laser annealing the qubit by applying a laser through a surface of the qubit chip that is opposite the second chip.5. The method of claim 1 , further comprising ion etching the qubit.6. The method of claim 1 , wherein the forming the optically transmissive path comprises drilling claim 1 , using a high-power laser beam claim 1 , the second chip to form a through-hole in the second chip.7. The method of claim 1 , wherein the forming the optically transmissive path comprises etching a through-hole in the second chip.8. The method of claim 6 , wherein the etching comprises deep-reactive ion etching.9. The method of claim 6 , wherein the etching comprises a chemical etch claim 6 , and wherein the chemical etch is a tetramethylammonium hydroxide (TMAH) etch.10. The method of claim 1 , wherein the second chip comprises a transparent substrate.11. The method of claim 10 , wherein the transparent substrate is Magnesiumoxide (MgO).12. A flip chip apparatus comprising:a first chip comprising a qubit; anda second chip bonded to the first chip, wherein an optically transmissive path in the second chip provides for optical access to the ...

Adjustment of qubit frequency through annealing

An embodiment includes a method and device for forming a multi-qubit chip. The method includes forming a plurality of qubits on a chip, where each qubit comprises a Josephson junction. The method includes annealing one or more Josephson junctions. Annealing is performed by one or more of a plurality of laser emission sources on a planar lightwave circuit. Each of the laser emission sources is located above each qubit.

Frequency tuning of multi-qubit systems

The invention includes methods, and the structures formed, for multi-qubit chips. The methods may include annealing a Josephson junction of a qubit to either increase or decrease the frequency of the qubit. The conditions of the anneal may be based on historical conditions, and may be chosen to tune each qubit to a desired frequency.

LASER ANNEALING QUBITS FOR OPTIMIZED FREQUENCY ALLOCATION

A qubit may be formed by forming a Josephson junction between two capacitive plates. The Josephson junction may be an aluminum/aluminum-oxide/aluminum trilayer Josephson junction on a substrate. The Josephson junction may be annealed with a thermal source. Annealing the Josephson junction may alter the frequency of the qubit. 1. A method for forming a qubit , the method comprising:forming a Josephson junction between two capacitive plates, wherein the Josephson junction is an aluminum/aluminum-oxide/aluminum trilayer Josephson junction on a substrate; andannealing the Josephson junction with a thermal source, wherein the thermal source is a laser that generates a beam, the beam having a diameter that is greater than a diameter of the Josephson junction, wherein the diameter of the beam encompasses one or more portions of each of the two capacitive plates, and wherein annealing the Josephson junction alters the frequency of the qubit.2. The method of claim 1 , wherein the substrate is a Silicon substrate.3. The method of claim 1 , wherein the substrate is a sapphire substrate.4. The method of claim 1 , wherein the substrate is a magnesium oxide substrate.5. The method of claim 1 , wherein each aluminum layer of the aluminum/aluminum-oxide/aluminum trilayer is connected to a respective niobium capacitive plate.6. (canceled)7. The method of claim 1 , wherein the beam has a 532 nm wavelength.8. The method of claim 7 , wherein the beam is a Gaussian beam.9. (canceled)10. The method of claim 8 , wherein the beam is directed toward the Josephson junction.11. The method of claim 10 , wherein the beam directly illuminates the Josephson junction.12. The method of claim 11 , wherein the beam heats the substrate.13. The method of claim 12 , wherein the beam heats the aluminum portions of the aluminum/aluminum-oxide/aluminum trilayer Josephson junction.14. The method of claim 13 , wherein the beam further heats the aluminum-oxide portion of the aluminum/aluminum-oxide/aluminum ...

Laser annealing of qubits with structured illumination

A qubit may be formed by forming a Josephson junction between two capacitive plates. The Josephson junction may be annealed with a laser that generates a Gaussian beam. An axicon lens may be exposed to the Gaussian beam.

Intracavity Grating to Suppress Single Order of Ring Resonator

Microwave-to-optical transducers in an optical ring resonator having intracavity grating to split a single resonance order are provided. In one aspect, a microwave-to-optical transducer includes: an optical ring resonator with intracavity grating; and a microwave signal waveguide optically coupled to the optical ring resonator with the intracavity grating. Microwave-to-optical transducers having multiple pump photon optical ring resonators and multiple signal photon optical ring resonators optically coupled to the optical ring resonator with the intracavity grating are also provided, as is a method of forming a microwave-to-optical transducer, and a method for microwave-optical transduction. 1. A method of forming a microwave-to-optical transducer , the method comprising:providing a first silicon (Si) layer on a substrate;patterning the first Si layer to form a patterned portion of the first Si layer having a shape of an optical ring resonator on the substrate;depositing a silicon germanium (SiGe) layer onto the substrate over the patterned portion of the first Si layer;patterning the SiGe layer into a core and an evanescent feature adjacent to the core, wherein the evanescent feature comprises a base portion, and a width modulation portion having a width that modulates continuously along a surface of the base portion facing the core to form an intracavity grating;depositing a second Si layer onto the substrate over the core and the evanescent feature adjacent to the core; andpatterning the second Si layer to form a patterned portion of the second Si layer that surrounds the core and the evanescent feature adjacent to the core.2. The method of claim 1 , wherein the substrate comprises a material selected from the group consisting of: sapphire claim 1 , diamond claim 1 , silicon carbide (SiC) claim 1 , gallium nitride (GaN) claim 1 , and combinations thereof.3. The method of claim 1 , wherein the intracavity grating is formed having a sawtooth pattern.4. The method ...

Self-clocked low noise photoreceiver (sclnp)

A self-clocked photoreceiver device and a method of operating. The self-clocked photoreceiver device includes a light detector connected between a power supply node and a first node, and first to third switching elements. The light detector is configured to detect an incident optical data signal, and to output photocurrent corresponding to a magnitude of the optical data signal through the first node. The first switching element is connected between the first node and a ground node. The second switching element is connected between the power supply node and a second node. The third switching element is connected between the second node and the ground node. The third switching element has a control node connected to the first node.

Qubit-Optical-CMOS Integration Using Structured Substrates

Techniques for the integration of SiGe/Si optical resonators with qubit and CMOS devices using structured substrates are provided. In one aspect, a waveguide structure includes: a wafer; and a waveguide disposed on the wafer, the waveguide having a SiGe core surrounded by Si, wherein the wafer has a lower refractive index than the Si (e.g., sapphire, diamond, SiC, and/or GaN). A computing device and a method for quantum computing are also provided. 1. A method for quantum computing , the method comprising:providing a computing device that includes: (i) a waveguide structure comprising a wafer, and a waveguide disposed on the wafer, the waveguide comprising a resonator-based microwave-to-optical transducer having a silicon germanium (SiGe) core surrounded by silicon (Si), wherein the wafer has a lower refractive index than the Si, (ii) quantum bits (qubits) disposed on the wafer, (iii) superconducting bus paths between the waveguide and the qubits, and (iv) field effect transistors (FETs) disposed on the wafer connecting the superconducting bus paths between the waveguide and the qubits;selecting one of the superconducting bus paths between the waveguide and a given one of the qubits;routing a microwave signal from the given one of the qubits along the one of the superconducting bus paths that has been selected; andconverting the microwave signal to an optical signal via the resonator-based microwave-to-optical transducer.2. The method of claim 1 , wherein the wafer comprises a material selected from the group consisting of: sapphire claim 1 , diamond claim 1 , silicon carbide (SiC) claim 1 , gallium nitride (GaN) claim 1 , and combinations thereof.3. The method of claim 1 , wherein the superconducting bus paths are connected to source and drains of the FETs.4. The method of claim 3 , wherein the selecting of the one of the superconducting bus paths comprises:applying a gate voltage to a given one of the FETs along the one of the superconducting bus paths to switch ...

Superconducting qubit capacitance and frequency of operation tuning

A method for adjusting a resonance frequency of a qubit in a quantum mechanical device includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit comprising capacitor pads; and removing substrate material from the backside of the substrate at an area opposite the at least one qubit to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.

Qubit-Optical-CMOS Integration Using Structured Substrates

Techniques for the integration of SiGe/Si optical resonators with qubit and CMOS devices using structured substrates are provided. In one aspect, a waveguide structure includes: a wafer; and a waveguide disposed on the wafer, the waveguide having a SiGe core surrounded by Si, wherein the wafer has a lower refractive index than the Si (e.g., sapphire, diamond, SiC, and/or GaN). A computing device and a method for quantum computing are also provided. 1. A waveguide structure , comprising:a wafer; anda waveguide disposed on the wafer, the waveguide comprising a silicon germanium (SiGe) core surrounded by silicon (Si), wherein the wafer has a lower refractive index than the Si.2. The waveguide structure of claim 1 , wherein the wafer comprises a material selected from the group consisting of: sapphire claim 1 , diamond claim 1 , silicon carbide (SiC) claim 1 , gallium nitride (GaN) claim 1 , and combinations thereof.3. The waveguide structure of claim 1 , wherein the waveguide has a ring shape.4. The waveguide structure of claim 3 , wherein the waveguide comprises a resonator-based microwave-to--optical transducer.5. The waveguide structure of claim 4 , further comprising:a top electrode disposed on the waveguide.6. The waveguide structure of claim 5 , wherein the top electrode has a crescent shape.7. The waveguide structure of claim 4 , further comprising:a bottom electrode disposed on a side of the wafer opposite the waveguide.8. The waveguide structure of claim 4 , further comprising:bias electrodes disposed on the wafer on opposite sides of the waveguide.9. The waveguide structure of claim 4 , further comprising:at least one quantum bit (qubit) disposed on the wafer.10. The waveguide structure of claim 8 , wherein the at least one qubit comprises:a superconducting bottom electrode on an Si layer; anda superconducting top electrode separated from the superconducting bottom electrode by an insulator.11. The waveguide structure of claim 9 , wherein the Si layer is ...

Reducing dark current in germanium photodiodes by electrical over-stress

Methods and systems for reducing dark current in a photodiode include heating a photodiode and applying an increasing reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.

Rapid melt growth photodetector

Photodetector including: a waveguide of a waveguide material extending over a substrate; an insulating layer formed over the waveguide and having an opening exposing the waveguide; a photodetector layer formed over the insulating layer and into the opening so as to make contact with the waveguide, the photodetector layer having a first end at the opening and a second end distal from the opening, the photodetector layer being a gradient material of the waveguide material and germanium wherein a waveguide material portion of the gradient material varies from a maximum at the first end to a minimum at the second end and wherein a germanium portion of the gradient material varies from a minimum at the first end to a maximum at the second end; a photodetector region at the second end; and a photodetector layer extension extending at an angle from the photodetector layer at the second end.

UNTUNED RESONANCE TRACED GAS SENSING

Methods and systems for detecting a gas or liquid in an environment include measuring a reference signal at each of a set of wavelengths by passing a signal at each wavelength through a reference cell having a gas or liquid to be detected. A sensing signal is measured at each of the plurality of wavelengths by coupling each wavelength to a ring resonator in the environment. A set of wavelengths that correspond to an absorption curve of the gas or liquid to be detected is determined. A concentration of the gas or liquid to be detected in the environment is determined based on amplitudes of the sensing signal at each of the set of wavelengths. 1. A method of detecting a gas or liquid in an environment , comprising:measuring a reference signal at each of a plurality of wavelengths by passing a signal at each wavelength through a reference cell having a gas or liquid to be detected;measuring a sensing signal at each of the plurality of wavelengths by coupling each wavelength to a ring resonator in the environment;determining a set of wavelengths that correspond to an absorption curve of the gas or liquid to be detected; anddetermining a concentration of the gas or liquid to be detected in the environment by comparing amplitudes of the sensing signals at each of the set of wavelengths that correspond to the absorption curve to reference signals measured at each of the set of wavelengths.2. The method of claim 1 , wherein determining the set of wavelengths comprises determining wavelengths that fall within a full width at half maximum of the absorption curve.3. The method of claim 2 , wherein determining the set of wavelengths further comprises determining the full width at half maximum based on the detected reference signals.4. The method of claim 1 , wherein the set of wavelengths consists of wavelengths that are resonant in the ring resonator.5. The method of claim 1 , wherein the gas or liquid to be detected is methane gas.6. The method of claim 5 , wherein the ring ...

Adjustment of qubit frequency through annealing

An embodiment includes a method and device for forming a multi-qubit chip. The method includes forming a plurality of qubits on a chip, where each qubit comprises a Josephson junction. The method includes annealing one or more Josephson junctions. Annealing is performed by one or more of a plurality of laser emission sources on a planar lightwave circuit. Each of the laser emission sources is located above each qubit.

Self-alignment features for iii-v ridge process and angled facet die

A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

Reducing dark current in germanium photodiodes by electrical over-stress

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

SINGLE EDGE COUPLING OF CHIPS WITH INTEGRATED WAVEGUIDES

Techniques are provided for single edge coupling of chips with integrated waveguides. For example, a package structure includes a first chip with a first critical edge, and a second chip with a second critical edge. The first and second chips include integrated waveguides with end portions that terminate on the first and second critical edges. The second chip includes a signal reflection structure that is configured to reflect an optical signal propagating in one or more of the integrated waveguides of the second chip. The first and second chips are edge-coupled at the first and second critical edges such that the end portions of the integrated waveguides of the first and second chips are aligned to each other, and wherein all signal input/output between the first and second chips occurs at the single edge-coupled interface. 1. A package structure comprising:a first chip comprising a first critical edge, a first integrated waveguide, and a second integrated waveguide, wherein the first and second integrated waveguides of the first chip each comprise an end portion that terminates on the first critical edge of the first chip;a second chip comprising a second critical edge, a first integrated waveguide, a second integrated waveguide, and a signal reflection structure, wherein the first and second integrated waveguides of the second chip each comprise an end portion that terminates on the second critical edge of the second chip, and an end portion that is coupled to the signal reflection structure, wherein the signal reflection structure is configured to reflect an optical signal propagating in at least one of the first and second integrated waveguides of the second chip;wherein the first and second chips are edge-coupled at the first and second critical edges such that the end portions of the first integrated waveguides of the first and second chips are aligned to each other, and the end portions of the second integrated waveguides of the first and second chips are ...

Single edge coupling of chips with integrated waveguides

Techniques are provided for single edge coupling of chips with integrated waveguides. For example, a package structure includes a first chip with a first critical edge, and a second chip with a second critical edge. The first and second chips include integrated waveguides with end portions that terminate on the first and second critical edges. The second chip includes a signal reflection structure that is configured to reflect an optical signal propagating in one or more of the integrated waveguides of the second chip. The first and second chips are edge-coupled at the first and second critical edges such that the end portions of the integrated waveguides of the first and second chips are aligned to each other, and wherein all signal input/output between the first and second chips occurs at the single edge-coupled interface.

SUPERCONDUCTING INTERPOSER FOR OPTICAL TRANSDUCTION OF QUANTUM INFORMATION

A system for optical transduction of quantum information includes a qubit chip including a plurality of data qubits configured to operate at microwave frequencies, and a transduction chip spaced apart from the qubit chip, the transduction chip including a microwave-to-optical frequency transducer. The system includes an interposer coupled to the qubit chip and the transduction chip, the interposer including a dielectric material including a plurality of superconducting microwave waveguides formed therein. The plurality of superconducting microwave waveguides is configured to transmit quantum information from the plurality of data qubits to the microwave-to-optical frequency transducer on the transduction chip, and the microwave-to-optical frequency transducer is configured to transduce the quantum information from the microwave frequencies to optical frequencies. 1. A system for optical transduction of quantum information , comprising:a qubit chip comprising a plurality of data qubits configured to operate at microwave frequencies;a transduction chip spaced apart from said qubit chip, said transduction chip comprising a microwave-to-optical frequency transducer; andan interposer coupled to said qubit chip and said transduction chip, said interposer comprising a dielectric material comprising a plurality of superconducting microwave waveguides formed therein,wherein said plurality of superconducting microwave waveguides is configured to transmit quantum information from said plurality of data qubits to said microwave-to-optical frequency transducer on said transduction chip, andwherein said microwave-to-optical frequency transducer is configured to transduce said quantum information from said microwave frequencies to optical frequencies.2. The system for optical transduction of quantum information according to claim 1 ,wherein said microwave-to-optical frequency transducer is further configured to transduce quantum information from said optical frequency to said ...

Tiling of cross-resonance gates for quantum circuits

Techniques regarding tiling a CR gate configuration to one or more lattices characterizing quantum circuit topologies are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a memory that can store computer executable components. The system can also comprise a processor, operably coupled to the memory, and that can execute the computer executable components stored in the memory. The computer executable components can comprise a tiling component that can generate a cross-resonance gate configuration that delineates a control qubit assignment and a target qubit assignment in conjunction with a frequency allocation onto a lattice characterizing a quantum circuit topology.

Microwave-to-optical quantum transducers

Techniques regarding microwave-to-optical quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a microwave resonator on a dielectric substrate and adjacent to an optical resonator, and a photon barrier structure at least partially surrounding an optical resonator, wherein the photon barrier structure is configured to provide isolation of the microwave resonator from optical photons in the dielectric substrate outside the photon barrier structure.

Continuous evanescent perturbation gratings in a silicon photonic device

A method of fabricating a silicon photonic device and a system including a silicon photonic device are described. The method includes forming a photoresist layer on a silicon layer and patterning a mask formed on the photoresist layer. The patterning defines a primary optical waveguide region, a first evanescent perturbation grating region on a first side of the primary optical waveguide region and a second evanescent perturbation grating region on a second side, opposite the first side, of the primary optical waveguide. The first evanescent perturbation grating region and the second evanescent perturbation grating region are defined as continuous regions along a length of the silicon photonic device. The method also includes etching the photoresist layer and the silicon layer according to a pattern of the patterned mask.

Laser annealing qubits for optimized frequency allocation

A qubit may be formed by forming a Josephson junction between two capacitive plates. The Josephson junction may be an aluminum/aluminum-oxide/aluminum trilayer Josephson junction on a substrate. The Josephson junction may be annealed with a thermal source. Annealing the Josephson junction may alter the frequency of the qubit.

Single edge coupling of chips with integrated waveguides

Techniques are provided for single edge coupling of chips with integrated waveguides. For example, a package structure includes a first chip with a first critical edge, and a second chip with a second critical edge. The first and second chips include integrated waveguides with end portions that terminate on the first and second critical edges. The second chip includes a signal reflection structure that is configured to reflect an optical signal propagating in one or more of the integrated waveguides of the second chip. The first and second chips are edge-coupled at the first and second critical edges such that the end portions of the integrated waveguides of the first and second chips are aligned to each other, and wherein all signal input/output between the first and second chips occurs at the single edge-coupled interface.

Laser annealing of qubits with structured illumination

A qubit may be formed by forming a Josephson junction between two capacitive plates. The Josephson junction may be annealed with a thermal source. The thermal source may be a laser that generates a Gaussian beam. An axicon lens may be exposed to the Gaussian beam. Annealing the Josephson junction may alter the resistance of the Josephson junction.

System and method to control quantum states of microwave frequency qubits with optical signals

A quantum computer includes a quantum computing system; a transducer disposed inside the quantum computing system, the transducer being configured to receive an optical control propagating wave and output a microwave control propagating wave; and a quantum processor comprising a plurality of qubits, the plurality of qubits being disposed in the quantum computing system, each qubit of the plurality of qubits being configured to receive at least a portion of the microwave control propagating wave to control a quantum state of each qubit of the plurality of qubits.

Reducing dark current in germanium photodiodes by electrical over-stress

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode. A control system is configured to trigger the reverse bias voltage source to increase the reverse bias voltage.

Reducing dark current in germanium photodiodes by electrical over-stress

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

Reducing dark current in germanium photodiodes by electrical over-stress

Methods and systems for reducing dark current in a photodiode include heating a photodiode and applying an increasing reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.

Reducing dark current in germanium photodiodes by electrical over-stress

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.

Frequency tuning of multi-qubit systems

The invention includes methods, and the structures formed, for multi-qubit chips. The methods may include annealing a Josephson junction of a qubit to either increase or decrease the frequency of the qubit. The conditions of the anneal may be based on historical conditions, and may be chosen to tune each qubit to a desired frequency.

Modular quantum system with discrete levels of connectivity

Devices and methods that facilitate modular quantum systems with discreet levels of connectivity are provided. In various embodiments, a quantum computing device can comprise one or more modules comprising at least qubits, buses, and readout structures; a plurality of couplers, wherein the plurality of couplers comprises at least two couplers selected from a group consisting of: classical couplers, short-range couplers, and long-range couplers, that are adapted for coupling a plurality of the at least qubits, buses, and readout structures; and a connection from the one or more modules to one or more classical controllers external to a cryogenic environment comprising the one or more modules.

Frequency tuning of multi-qubit systems

The invention includes methods, and the structures formed, for multi-qubit chips. The methods may include annealing a Josephson junction of a qubit to either increase or decrease the frequency of the qubit. The conditions of the anneal may be based on historical conditions, and may be chosen to tune each qubit to a desired frequency.

Superconducting interposer for optical transduction of quantum information

Superconducting interposer for optical transduction of quantum information

Quantum transducers with embedded optical resonators

Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a superconducting microwave resonator having a microstrip architecture that includes a dielectric layer positioned between a superconducting waveguide and a ground plane. The apparatus can also include an optical resonator positioned within the dielectric layer.

Optically multiplexed quantum control interface

A qubit control system for a quantum computer includes an optical waveguide configured to receive and transmit therethrough a wavelength division multiplexed optical signal which has a plurality of modulated optical carriers, each optical carrier being at a different optical wavelength and carrying a digital qubit control signal; an optical demultiplexer optically coupled to the optical waveguide to receive the multiplexed optical signal to recover the plurality of modulated optical carriers; a plurality of photodetectors in communication with the optical demultiplexer; a plurality of cryogenic filters in communication with the plurality of photodetectors, each being configured to filter corresponding one of the plurality of digital qubit control signals to provide a corresponding one of a plurality of analog qubit control signals which is directed to a corresponding superconducting qubit and the photodetectors. The cryogenic filters are provided at a cryogenic temperature.

Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal

Structures including optical waveguides disposed over substrates having a chamber or trench defined therein, and methods for formation thereof. A structure comprising: a substrate having a recess defined therein; a layer disposed over the recess, (i) the layer comprising a first cladding material and a second cladding material, and (ii) the recess and a bottom surface of the layer defining a chamber; and a first optical waveguide disposed in the layer, the first optical waveguide having a first core including a first core material and (ii) a first guided mode, wherein (i) the first cladding material contacts the first core, the second cladding material contacts the substrate, and the first and second cladding materials are rigidly connected, (ii) the first core and at least one of the first and second cladding materials have an index contrast of greater than 10%, and (iii) a majority of the first guided mode is contained in the core and in at least once of the first cladding material and the second cladding material.

Superconducting interposer for optical transduction of quantum information

Selective optical tuning of qubit two-level system interactions using bandpass filters

Methods and systems for mitigating the effects of defects in a quantum processor are provided. A mitigation system includes a quantum processor comprising a plurality of qubits. The system includes a light emitting source that can be tuned to produce light pulses of different wavelengths. The system includes an array of bandpass filters. Each bandpass filter is aligned with a qubit on the quantum processor and has a unique pass band. The system may include a controller configured to receive a selection of a qubit and to tune the light emitting source to emit a light pulse having a wavelength that falls within a range of a bandpass filter that is aligned with the selected qubit. The light pulse is used to scramble an ensemble of strongly coupled two-level system (TLS) in the processor.

Electro-optic transducer with integrated optical delay line

Devices and/or methods provided herein relate to providing conversion of photons between an optical domain and a microwave domain. An electronic structure can comprise a resonator assembly comprising a microwave resonator and an optical resonator, an optical pump waveguide that transmits an optical pump input to the resonator assembly, and an optical signal waveguide, separate from the optical pump waveguide, that transmits an optical signal relative to the resonator assembly. The electronic structure further can comprise a microwave signal waveguide that transmits a microwave signal relative to the resonator assembly. The optical pump waveguide can comprise a delay portion that delays receipt of the optical pump input to the resonator assembly through the optical pump waveguide to a time after reduction of a majority of decoherence of the resonator assembly caused by scattering of a portion of the optical pump input, which portion does not enter the optical pump waveguide.

Laser on-demand scrambling of two-level systems in superconducting qubits

Methods and systems for mitigating the effects of defects in a quantum processor are provided. A mitigation system uses an iterative process of applying light pulses and examining qubit relaxation times to eliminate or minimize two-level system (TLS) interaction with qubits. The system applies a first light pulse to illuminate a quantum processor having one or more qubits. The system receives qubit relaxation times that are measured at different electric field frequencies after applying the first light pulse. The system applies a second light pulse to illuminate the quantum processor upon determining that the received qubit relaxation times indicates presence of a strongly coupled TLS in the quantum processor

Superconducting qubit capacitance and frequency of operation tuning

A method for adjusting a resonance frequency of a qubit in a quantum mechanical device includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit comprising capacitor pads; and removing substrate material from the backside of the substrate at an area opposite the at least one qubit to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.

Tiling of cross-resonance gates for quantum circuits

Techniques regarding tiling a CR gate configuration to one or more lattices characterizing quantum circuit topologies are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a memory that can store computer executable components. The system can also comprise a processor, operably coupled to the memory, and that can execute the computer executable components stored in the memory. The computer executable components can comprise a tiling component that can generate a cross-resonance gate configuration that delineates a control qubit assignment and a target qubit assignment in conjunction with a frequency allocation onto a lattice characterizing a quantum circuit topology.

Self-alignment features for III-V ridge process and angled facet die

A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.

Qubit-selective tuning of two-level system in superconducting qubits via optical control

Methods and systems for mitigating the effects of defects in a quantum processor are provided. A mitigation system includes a quantum processor having multiple qubits. The system includes an array of light emitting sources. Each light emitting source is aligned with a qubit on the quantum processor. The system includes a controller configured to receive a selection of a qubit and to enable a light emitting source from the array of light emitting sources to emit light to the selected qubit. The light is use to scramble strongly coupled two-level systems (TLSs) in the quantum processor.

具有ｓｏｉ摻雜源之鍺光偵測器

各種特定的實施例包括用於形成光偵測器的方法，包括：形成一結構，該結構包括設置在摻雜矽(Si)層及鍺(Ge)層之間的阻擋層，該阻擋層包括結晶窗；以及退火該結構，以經由結晶窗轉換Ge變為矽鍺(SiGe)的第一組成物及摻雜Si變為SiGe的第二組成物。