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Применить Всего найдено 3. Отображено 3.
13-01-2021 дата публикации

Organic thin film transistor gas sensor system

Номер: GB0002585333A
Автор: PASCAL CACHELIN [GB], NICHOLAS DARTNELL [GB], DANIEL TOBJÖRK [GB], PASCAL CACHELIN, NICHOLAS DARTNELL, DANIEL TOBJÖRK, Pascal Cachelin, Nicholas Dartnell, Daniel Tobjörk
Принадлежит:

A gas sensor system for a conjugated hydrocarbon (eg styrene) has first and second OTFT gas sensors, each having source and drain electrodes 107, 109 in contact with organic semiconductor layer 111, gate electrode 103, and gate dielectric 105 between the gate and the semiconductor layer. The first OTFT allows the hydrocarbon to communicate with source and drain; the second OTFT (which may sense an alkyl or or alkanoate ester) blocks it from doing so. The first organic semiconductor layer may be crystalline; the second organic semiconductor layer may be amorphous. Blocking layer 113, perhaps a thiol monolayer, may be disposed on source and drain electrode surfaces. In aspects, an OTFT gas sensor for a conjugated hydrocarbon is configured as the first OTFT; or an OTFT gas sensor for an ester is configured as the second OTFT except that environmental gases are blocked from communicating with source and drain.

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Номер записи: 1
26-01-2022 дата публикации

Thin film transistor gas sensor system

Номер: GB0002597267A
Автор: PASCAL CACHELIN [GB], DANIEL PER GUSTAV TOBJORK [GB]
Принадлежит:

A gas sensor system comprising a first top-gate thin film transistor (TFT) gas sensor (100, fig 1) configured to detect a first target gas and comprising a first dielectric layer 109; a second top-gate TFT gas sensor (200, fig 1) configured to detect a second target gas and comprising a second dielectric layer 109, wherein the first dielectric layer and second dielectric layer differ in at least one of thickness and composition. The first and second dielectric layers may each comprise a polymer. These polymers may be different. The first layer may comprise a first material and the second layer may comprise a second material, these two being different. The first material may have greater polarity and polarity Hansen solubility parameter than the second material. The first material may be protic and may be substituted with a hydroxyl or amino group. The second material may be aprotic. The first target gas may be ethylene. The second target gas may be 1-methylcyclopropene (1-MCP). A method ...

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Номер записи: 2
06-10-2021 дата публикации

Gas sensor

Номер: GB0002593724A
Автор: PASCAL CACHELIN [GB], DANIEL TOBJÖRK [GB], PASCAL CACHELIN, DANIEL TOBJÖRK, Pascal Cachelin, Daniel Tobjörk
Принадлежит:

A method of monitoring a concentration (C) of a constituent of a fluid using a field effect transistor or an electrochemical transistor comprises; applying a measurement drain voltage across the transistor, and applying a measurement gate voltage to a gate of the transistor; periodically estimating a threshold voltage (Vest) of the transistor by measuring, for a fixed drain voltage, drain currents (ID(VG)) corresponding to two or more gate voltages (VG) within a range between a first gate voltage (V1) and a second gate voltage (V2), wherein each of the first gate voltage (V1) and the second gate voltage (V2) is within 25% of the measurement gate voltage (VDm); calculating the estimated threshold voltage (Vest) for the transistor based on the measured drain currents (ID(VG)) and corresponding gate voltages (VG); and calculating a concentration (C) of the constituent based on the estimated threshold voltage (Vest).

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Номер записи: 3