Apparatus and method for profiling a beam of a light emitting semiconductor device

Profiling a beam of a light emitting semiconductor device comprising a light emitting semiconductor device 102 with an active region 108 formed on a substrate 104 and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device. The device further has a light emitting surface 110 defined by a lower surface of the substrate opposite the contacts. A transmission medium 112 comprising a first surface 114 is in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface 116 is opposite the first surface, and configured to diffuse light emitted from the micro-LED. The beam may be profiled with a beam profiler and may also use a power meter. The diffusion surface may be configured to diffuse light in a substantially Lambertian profile. The transmission medium may comprise either glass or sapphire.

Apparatus and method for profiling a beam of a light emitting semiconductor device

Methods and apparatus (100) for profiling a beam of a light emitting semiconductor device. The apparatus comprises a light emitting semiconductor device (102) comprising an active region (108) formed on a substrate (104) and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device and a light emitting surface (110) defined by a lower surface of the substrate opposite the contacts. The apparatus further comprises a transmission medium (112) comprising a first surface (114) in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface (116), opposite the first surface, and configured to diffuse light emitted from the micro-LED and transmitted through the transmission medium.

VERFAHREN UND VORRICHTUNG ZUR BESTIMMUNG DER OPTISCHEN EIGENSCHAFTEN EINER LINSE

Micro-LED device

A micro-LED, μLED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H2*H2)/Ac, of less than 0.5, and the μLED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.

Methods and apparatus for improving micro-LED devices

The extraction efficiency (EE) of a mesa shaped micro-LED (uLED) device 800 is improved by guiding light generated in a light emitting region to reach the light emission surface at an angle more acute that the total internal reflection angle 811 using off-axis crystal structures. A semiconductor epitaxial layer 804 is grown on a substrate 802, and a mesa 806 is defined in the substrate and epitaxial layer, which may comprise a wurtzite crystal lattice structure and may be gallium nitride. An active light emitting layer 808 is configured within the epitaxial layer, so that on application of an electrical current, light is emitted through a surface 810 of the substrate opposite the mesa. The crystal lattice structure 814a, 814b of the substrate and the epitaxial layer is arranged such that a c-plane 202 of the crystal lattice structure is misaligned with respect to the light emitting surface 810. The semi-polar plane 208 may be aligned approximately normal to the light emission surface.

REDUNDANCY IN INORGANIC LIGHT EMITTING DIODE DISPLAYS

Methods and apparatus for use in the manufacture of a display device including pixels. Each pixel includes a plurality of sub-pixels, each sub-pixel configured to provide light of a given wavelength. The method may include: performing, using a pick up tool (PUT), a first placement cycle comprising picking up first light emitting diode (LED) dies, and placing a first LED die on a substrate of the display device at a location corresponding to a sub-pixel the display device. The method further includes performing one or more subsequent placement cycles comprising picking up a second LED die, and placing the second LED die on the substrate of the display device at a second location corresponding to the sub-pixel of the display device. Multiple first and second LED dies may be picked and placed during each placement cycle to populate each pixel of the display device to provide redundancy of LED dies at each sub-pixel. 1. A display device , comprising:a substrate; and a parabolic mesa structure;', 'a light emitting source within the parabolic mesa structure; and', 'a primary emission surface on a side of the LED die opposed to a top of the parabolic mesa structure; and', 'a first electrode and a second electrode on another side of the LED die opposed to the primary emission surface., 'an LED emitter comprising, 'a die attached to the substrate, comprising2. The display device according to claim 1 , wherein the LED die includes a plurality of LED emitters that share a common electrode.3. The display device according to claim 2 , further comprising a plurality of LED dies attached to the substrate at locations corresponding to a sub-pixel of a pixel of the display device.4. The display device according to claim 2 , wherein:the plurality of LED emitters of the LED die are attached to the substrate at a first location corresponding to a first sub-pixel of the pixel;the display device further includes another LED die including another plurality of LED emitters attached to the ...

Light emitting diode with field enhanced contact

Embodiments relate to a light emitting structure including a light emitting diode, a first contact, and a second contact. The light emitting diode includes a body of transparent semiconductor material with a top surface and a light emitting region below the top surface. The light emitting region emits light in response to current passing through the light emitting region; the emitted light passes through the body of the light emitting diode. The first contact is connected to the top surface of the body and has a spiral shape to induce an electromagnetic field. The electromagnetic field shapes the light emitted from the light emitting region and passes through the body of the light emitting diode. The second contact is connected to a surface of the light emitting structure. A voltage difference can be applied across the first contact and second contact to generate the current through the light emitting region.

Methods and apparatus for improving micro-LED devices

A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface.

VERFAHREN UND VORRICHTUNG ZUR BESTIMMUNG DER OPTISCHEN EIGENSCHAFTEN EINER LINSE

ANWEISUNGSANZEIGER

METHODS AND APPARATUS FOR IMPROVING MICRO-LED DEVICES

A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface. 1. A light emitting diode (LED) device comprising:a substrate including a light emitting surface and a portion that protrudes in a direction away from the light emitting surface;a first epitaxial layer over the portion of the substrate that protrudes in the direction away from the light emitting surface;an active layer over the first epitaxial layer, the active layer generating light that is emitted through the light emitting surface of the substrate responsive to an application of an electrical current to the active layer,wherein at least one of the substrate and the first epitaxial layer comprises a crystal lattice structure where one or more 1122 planes of the crystal lattice structure is at an angle from a normal to the light emitting surface that is less than an angle of total internal reflection for the LED device.2. The LED device of claim 1 , wherein a c-plane of the crystal lattice structure is non-parallel to the light emitting surface of the substrate.3. The LED device of claim 1 , wherein the substrate includes another surface opposite the light emitting surface and the portion of the substrate protrudes from a portion of the other surface of the substrate.4. The LED device of claim 1 , wherein the crystal lattice structure is a wurzite crystal lattice structure.5. The LED device of claim 1 , wherein the substrate and the first epitaxial layer comprise a ...

ANWEISUNGSANZEIGER

MICRO-LED DEVICE

A Light emitting diode (LED) includes a mesa structure, a light emitting source within the mesa structure, and a primary emission surface on a side of the LED opposed to a top of the mesa structure. The light emitting source is configured to emit light anisotropically in a first direction perpendicular to a second direction of emission of the light from the LED at the primary emission surface. 1. A light emitting diode (LED) , comprising:a mesa structure;a light emitting source within the mesa structure; anda primary emission surface on a side of the LED opposed to a top of the mesa structure;wherein the light emitting source is configured to emit light anisotropically in a first direction perpendicular to a second direction of emission of the light from the LED at the primary emission surface.2. The LED of claim 1 , wherein the light emitting source emits the light in a plane of quantum wells of the light emitting source.3. The LED of claim 1 , wherein a greater proportion of the light from the light emitting source is incident upon an inner reflective surface of the mesa structure and a smaller proportion of the light from the light emitting source contributes to internal scattering and loss.4. The LED of claim 1 , wherein more than 50% of the light from the light emitting source is emitted in the first direction.5. The LED of claim 1 , wherein more than 80% of the of the light from the light emitting source is emitted in the first direction.6. The LED of claim 1 , wherein more than 90% of the of the light from the light emitting source is emitted in the first direction.7. The LED of claim 1 , wherein:the light emitting source includes quantum wells embedded in a first material;the LED further includes cladding regions of a second material surrounding the light emitting source; andthe first material includes a lower refractive index than the second material.8. The LED of claim 1 , wherein the light emitting source includes polar claim 1 , semi-polar and non-polar ...

REDUNDANCY IN INORGANIC LIGHT EMITTING DIODE DISPLAYS

Methods and apparatus for use in the manufacture of a display device including pixels. Each pixel includes a plurality of sub-pixels, each sub-pixel configured to provide light of a given wavelength. The method may include: performing, using a pick up tool (PUT), a first placement cycle comprising picking up first light emitting diode (LED) dies, and placing a first LED die on a substrate of the display device at a location corresponding to a sub-pixel the display device. The method further includes performing one or more subsequent placement cycles comprising picking up a second LED die, and placing the second LED die on the substrate of the display device at a second location corresponding to the sub-pixel of the display device. Multiple first and second LED dies may be picked and placed during each placement cycle to populate each pixel of the display device to provide redundancy of LED dies at each sub-pixel.

Display panel with non-visible light detection

A display panel for concurrent video output and eye position tracking. The display panel includes a substrate, a plurality of visible light emitting diodes (LEDs) positioned on a side of the substrate, and a plurality of light detectors positioned on the side of the substrate. The visible LEDs transmit quasi-collimated visible light propagating away from the side of the substrate. The light detectors capture invisible light propagating toward the side of the substrate, reflected from an eye of the user. In some embodiments, non-visible LEDs are formed on the side of the substrate. The visible LEDs, light detectors, and non-visible LEDs may be arranged to form pixels of the display panel. The quasi-collimated light emitted from the visible LEDs reduces spread into beam paths of the invisible light between the non-visible LEDs and the light detectors.

Micro-LED device

A Light emitting diode (LED) includes a mesa structure, a light emitting source within the mesa structure, and a primary emission surface on a side of the LED opposed to a top of the mesa structure. The light emitting source is configured to emit light anisotropically in a first direction perpendicular to a second direction of emission of the light from the LED at the primary emission surface.

Redundancy in inorganic light emitting diode displays

Methods and apparatus for use in the manufacture of a display device including pixels. Each pixel includes a plurality of sub-pixels, each sub-pixel configured to provide light of a given wavelength. The method may include: performing, using a pick up tool (PUT), a first placement cycle comprising picking up first light emitting diode (LED) dies, and placing a first LED die on a substrate of the display device at a location corresponding to a sub-pixel the display device. The method further includes performing one or more subsequent placement cycles comprising picking up a second LED die, and placing the second LED die on the substrate of the display device at a second location corresponding to the sub-pixel of the display device. Multiple first and second LED dies may be picked and placed during each placement cycle to populate each pixel of the display device to provide redundancy of LED dies at each sub-pixel.

APPARATUS AND METHOD FOR PROFILING A BEAM OF A LIGHT EMITTING SEMICONDUCTOR DEVICE

Methods and apparatus () for profiling a beam of a light emitting semiconductor device. The apparatus comprises a light emitting semiconductor device () comprising an active region () formed on a substrate () and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device and a light emitting surface () defined by a lower surface of the substrate opposite the contacts. The apparatus further comprises a transmission medium () comprising a first surface () in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface (), opposite the first surface, and configured to diffuse light emitted from the micro-LED and transmitted through the transmission medium. 1. An apparatus for profiling a beam of a light emitting semiconductor device , comprising:a light emitting semiconductor device comprising an active region formed on a substrate and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device, and a light emitting surface defined by a lower surface of the substrate opposite the contacts; anda transmission medium comprising a first surface in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface, opposite the first surface, and configured to diffuse light emitted from the semiconductor device and transmitted through the transmission medium.2. An apparatus according to claim 1 , wherein the transmission medium has a thickness of 3 mm or greater.3. An apparatus according to claim 1 , wherein the transmission medium has a refractive index substantially equal to a refractive index of the substrate of the light emitting semiconductor device claim 1 , such that there is substantially no reflection at the interface between the transmission medium and the substrate of the light emitting semiconductor device.48-. (canceled)9. An apparatus according to any ...

Methods and apparatus for improving micro-LED devices

A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface.

Electron flood lithography

A lithography system includes an electron source, a lens, and a stencil mask. The electron source emits a beam of electrons. The lens converts the emitted beam of electrons into a diffuse beam of parallel electrons. The stencil mask is positioned between the lens and a semiconductor wafer with an electron-sensitive resists. The stencil mask has a pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist of the wafer.

Redundancy in inorganic light emitting diode displays

Methods and apparatus for use in the manufacture of a display device including pixels. Each pixel includes a plurality of sub-pixels, each sub-pixel configured to provide light of a given wavelength. The method may include: performing, using a pick up tool (PUT), a first placement cycle comprising picking up first light emitting diode (LED) dies, and placing a first LED die on a substrate of the display device at a location corresponding to a sub-pixel the display device. The method further includes performing one or more subsequent placement cycles comprising picking up a second LED die, and placing the second LED die on the substrate of the display device at a second location corresponding to the sub-pixel of the display device. Multiple first and second LED dies may be picked and placed during each placement cycle to populate each pixel of the display device to provide redundancy of LED dies at each sub-pixel.

Vortex linearization of micro-LED polarization

A vortex polarizer converts light having azimuthal polarization emitted at a light emitting surface of a light emitting diode (LED) into a converted light having linear polarization. The vortex polarizer includes a distribution of fast axes that vary as a function of azimuth angle. Each fast axis rotates a portion of the light having the azimuthal polarization to a portion of the converted light having linear polarization. The vortex polarizer may include linear photoalignment polymer (LPP) aligned to define the distribution of fast axes.

Micro-LED Device

A micro-LED μLED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H*H)/Ac, of less than 0.5, and the μLED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.

MICRO-LED DEVICE

A micro-LED, μLED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H*H)/Ac, of less than 0.5, and the μLED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm. 119-. (canceled)20. A micro-LED , comprising:a substantially parabolic mesa structure;a light emitting source within the mesa structure; anda primary emission surface on a side of the micro-LED opposed to a top of the mesa structure;wherein the light emitting source is offset from a central axis of the mesa structure.2124-. (canceled)25222. The micro-LED of claim 20 , further including a light emitting layer within the mesa structure claim 20 , the light emitting source being a portion of the light emitting layer that emits light claim 20 , the mesa structure having an aspect ratio defined by (H*H)/Ac less than 0.3 claim 20 , and wherein H is a height of the light emitting layer above a base of the mesa structure and Ac is a cross-sectional area of the mesa structure at the level of the light emitting layer.26. The micro-LED of claim 20 , further comprising a reflective surface located in a region from the light emitting source to the primary emission surface.27. The micro-LED of claim 26 , wherein the reflective surface is the primary emission surface.28. The micro-LED of claim 26 , wherein reflective surface has a roughness Ra less than 300 nm.29. The micro-LED of claim 26 , wherein the reflective surface is an interface between a first material having a first refractive index and a second material having a second refractive index.30. The micro-LED of claim 29 , wherein the first material comprises an epilayer and the second material comprises a substrate upon ...

MULTIPLE LAYER PROJECTOR FOR A HEAD-MOUNTED DISPLAY

A head-mounted display (HMD) including multiple layered display panels. The HMD may include a first display panel to display a first image, and a second display panel positioned in front of the first display panel to at least partially overlap with the first display panel. The second display panel may include a display substrate, and a plurality of light emitting diodes (LEDs) positioned on the display substrate. The plurality of LEDs display a second image. The display substrate and the plurality of LEDs are transparent for the first image to be visible through the second display panel. 1. A head-mounted display (HMD) , comprising:a first display panel configured to display a first image; and a display substrate; and', 'a plurality of light emitting diodes (LEDs) positioned on the display substrate, the plurality of LEDs configured to display a second image, the display substrate and the plurality of LEDs being transparent for the first image to be visible through the second display panel., 'a second display panel positioned in front of the first display panel to at least partially overlap with the first display panel, the second display panel including2. The HDM of claim 1 , wherein each of the plurality of LEDs comprises:a LED substrate including a light emitting surface;an epitaxial layer disposed on another surface of the substrate at an opposite side of the light emitting surface, at least a portion of the epitaxial layer shaped into a mesa structure protruding away from the light emitting surface;an active layer disposed in the mesa structure to emit the second light to the light emitting surface, at least a portion of the light from the active layer internally reflected at the mesa structure towards the light emitting surface; anda contact layer disposed on the active layer.3. The HMD of claim 2 , wherein:the LED substrate includes sapphire or glass;the epitaxial layer includes gallium nitride (GaN); andthe contact layer includes indium tin oxide (ITO).4. ...

Methods and apparatus for improving micro-LED devices

A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface.

METHODS AND APPARATUS FOR IMPROVING MICRO-LED DEVICES

A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface. 1. A method for fabricating a light emitting diode (LED) device comprising:forming a substrate including a light emitting surface, a portion of the substrate protruding in a direction away from the light emitting surface;forming an epitaxial layer over the portion of the substrate that protrudes in the direction away from the light emitting surface; andforming an active layer on the epitaxial layer, the active layer generating light that is emitted through the light emitting surface of the substrate responsive to an application of an electrical current to the active layer,wherein at least one of the substrate and the epitaxial layer is formed to comprise a crystal lattice structure with one or more 1122 planes of the crystal lattice structure at an angle from a normal to the light emitting surface that is less than an angle of total internal reflection for the LED device.2. The method of claim 1 , further comprising:forming a c-plane of the crystal lattice structure to be non-parallel to the light emitting surface of the substrate.3. The method of claim 1 , wherein forming the substrate comprises:forming the substrate to include another surface at an opposite side of the light emitting surface, and wherein the portion of the substrate is formed to protrude from a portion of the other surface of the substrate.4. The method of claim 1 , wherein the crystal lattice structure is ...

METHODS AND APPARATUS FOR IMPROVING MICRO-LED DEVICES

A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface. 1. A μLED device comprising:a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa;an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa,wherein a crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface.2. A μLED device according to claim 1 , wherein the substrate and the epitaxial layer comprise a semiconductor material having a wurtzite crystal lattice structure.3. A μLED device according to claim 1 , wherein the semiconductor material comprises Gallium Nitride.4. A μLED device according to claim 2 , wherein the semiconductor material comprises Gallium Nitride.5. A μLED device according to claim 1 , wherein the misalignment of the crystal lattice structure is sufficient that one or more 1122 planes of the crystal lattice structure is at an angle less than the angle of total internal reflection for the μLED device.6. A μLED device according to claim 2 , wherein the misalignment of the crystal lattice structure is sufficient that one or more 1122 planes of the crystal lattice structure is at ...

Method and apparatus for determining the optical properties of a lens

Optical properties of a lens, including localized defects, are determined by analyzing the refracted image produced by transmitting a beam of light through an aperture (16) and a lens (12) to be tested. The image is reflected onto a light sensitive detecting surface (20). Information obtained from the light detecting surface is digitized and sent to an image processing unit (24) which calculates the optical properties of the lens. The aperture may consist of a single shaped opening or alternatively a plurality of concentric, annular rings. Correction lenses (30, 32) may be employed, either permanently or selectively, to alter the refracted beam before the beam intersects the detective surface.

Method and apparatus for determining the optical properties of a lens

Optical properties of a lens, including localized defects, are determined by analyzing the refracted image produced by transmitting a beam of light through an aperture and a lens to be tested. The image is reflected onto a light sensitive detecting surface. Information obtained from the light detecting surface is digitized and sent to an Image Processing Unit which calculates the optical properties of the lens. The aperture may consist of a single shaped opening or alternatively a plurality of concentric, annular rings. Correction lenses may be employed, either permanently or selectively, to alter the refracted beam before the beam intersects the detecting surface.

Method and apparatus for determining the optical properties of a lens

Optical properties of a lens, including localized defects, are determined by analyzing the refracted image produced by transmitting a beam of light through an aperture and a lens to be tested. The image is reflected onto a light sensitive detecting surface. Information obtained from the light detecting surface is digitized and sent to an Image Processing Unit which calculates the optical properties of the lens. The aperture may consist of a single shaped opening or alternatively a plurality of concentric, annular rings. Correction lenses may be employed, either permanently or selectively, to alter the refracted beam before the beam intersects the detecting surface.

Micro-LED device

A micro-LED, μLED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H2*H2)/Ac, of less than 0.5, and the μLED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.

Micro-led device

Instructive display

A polar or vector display (26) provides an operator of an optical instrument with a symbolic instruction regarding the direction and amount of motion required to center an optical element (16) on a chosen path.

Verfahren und vorrichtung zur bestimmung der optischen eigenschaften einer linse

Hand-held non-contact tonometer

A hand-held non-contact tonometer comprises a housing having a handle portion for enclosing a rechargeable D.C. power source and an upper head portion for enclosing alignment and tonometric measurement systems of the tonometer. An operator can directly view the patient's eye along an optical axis extending through the head portion of the housing, and an instructional display image is superimposed with the directly viewed image of the eye to guide the operator in X-Y-Z alignment based on data supplied by an afocal position detection system. A transceiver for wireless data exchange and a recharging support stand are also provided.

Hand-held non-contact tonometer

An electrical apparatus unit inwhich flat electrical circuit cards are mounted

Hand-held non-contact tonometer

An electrical apparatus unit inwhich flat electrical circuit cards are mounted

Chemical compounds

Afocal position detection system and ophthalmic instrument employing said system

A fast position detection system and related method for an ophthalmic instrument utilize stored geometrical relationships determined by multiple regression during instrument calibration to compute X-Y-Z alignment status of the instrument relative to a patient's eye based on local x-y position information from a pair of lateral detectors receiving corneally reflected light from a corresponding pair of lateral light sources. In a preferred embodiment, the lateral detectors are quad-cell detectors. A heads-up display image is preferably provided along an optical axis of the instrument for supplying instructive cues to an operator for moving the instrument to achieve alignment, whereby the operator sees both a macro-image of the patient's eye and the display image. The speed of the position detection system makes it particularly suitable for use in hand-held ophthalmic instruments.

Instructive display

A polar or vector display provides an operator of an optical instrument with a symbolic instruction regarding the direction and amount of motion required to center an optical element on a chosen path.

Instructive display

A polar or vector display (26) provides an operator of an optical instrument with a symbolic instruction regarding the direction and amount of motion required to center an optical element (16) on a chosen path.

Instructive display

A polar or vector display provides an operator of an optical instrument with a symbolic instruction regarding the direction and amount of motion required to center an optical element on a chosen path.

Anweisungsanzeiger

Apparatus and method for profiling a beam of a light emitting semiconductor device

Methods and apparatus (100) for profiling a beam of a light emitting semiconductor device. The apparatus comprises a light emitting semiconductor device (102) comprising an active region (108) formed on a substrate (104) and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device and a light emitting surface (110) defined by a lower surface of the substrate opposite the contacts. The apparatus further comprises a transmission medium (112) comprising a first surface (114) in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface (116), opposite the first surface, and configured to diffuse light emitted from the micro-LED and transmitted through the transmission medium.