Optoelectronic semiconductor bodies having a reflective layer system

An optoelectronic semiconductor body ( 1 ) having an active semiconductor layer sequence ( 10 ) and a reflective layer system ( 20 ) is described. The reflective layer system ( 20 ) comprises a first radiation-permeable layer ( 21 ), which adjoins the semiconductor layer sequence ( 10 ), and a metal layer ( 23 ) on the side of the first radiation-permeable layer ( 21 ) facing away from the semiconductor layer sequence ( 10 ). The first radiation-permeable layer ( 21 ) contains a first dielectric material. Between the first radiation-permeable layer ( 21 ) and the metal layer ( 23 ) there is disposed a second radiation-permeable layer ( 22 ) which contains an adhesion-improving material. The metal layer ( 23 ) is applied directly to the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion of the metal layer ( 23 ) is improved in comparison with the adhesion on the first dielectric material.

Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip

In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence for generating an electromagnetic radiation, and also a silver mirror. The silver mirror is arranged at the semiconductor layer sequence. Oxygen is admixed with the silver of the silver mirror. A proportion by weight of the oxygen in the silver mirror is preferably at least 10and furthermore preferably at most 10%. 1. An optoelectronic semiconductor chip comprising:a semiconductor layer sequence; anda silver mirror,wherein the silver mirror is arranged at the semiconductor layer sequence, and{'sup': '−5', 'wherein oxygen is admixed with the silver of the silver mirror with a proportion by weight of at least 10and at most 10%.'}2. The optoelectronic semiconductor chip according to claim 1 , wherein the silver mirror is fitted directly to the semiconductor layer sequence.3. The optoelectronic semiconductor chip according to claims 1 , wherein the silver mirror consists of silver and oxygen claims 1 , and wherein impurities of other substances amount to at most 100 ppm.4. The optoelectronic semiconductor chip according to claim 1 ,wherein a covering layer is fitted directly to a side of the silver mirror which faces away from the semiconductor layer sequence, andwherein the covering layer comprises a metal oxide or consists of one or more metal oxides.5. The optoelectronic semiconductor chip according to claim 1 , wherein the covering layer is formed by ZnO or by doped ZnO and has a thickness of at least 20 nm and of at most 500 nm.6. The optoelectronic semiconductor chip according to claim 1 , wherein a partial layer of the semiconductor layer sequence which adjoins the silver mirror is formed from p-doped GaN or from p-doped InAlGaN.7. The optoelectronic semiconductor chip according to claim 1 , wherein the partial layer has a thickness of between 2 nm and 20 nm inclusive claim 1 , a dopant is magnesium and a dopant concentration is between 1×10cmand 2×10cm.8. ...

THIN-FILM ENCAPSULATION, OPTOELECTRONIC SEMICONDUCTOR BODY COMPRISING A THIN-FILM ENCAPSULATION AND METHOD FOR PRODUCING A THIN-FILM ENCAPSULATION

A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer. 115-. (canceled)17. The thin-film encapsulation according to . Wherein the PVD layer is electrically conducting.18. The thin-film encapsulation according to claim 16 , wherein the thickness of the PVD layer is 50 nm to 400 nm.19. The thin-film encapsulation according to claim 16 , wherein the PVD layer is at least one selected from the group consisting of titanium claim 16 , tungsten claim 16 , titanium-tungsten claim 16 , titanium nitride claim 16 , tungsten nitride claim 16 , titanium-tungsten nitride claim 16 , platinum claim 16 , nickel claim 16 , gold and tantalum.20. The thin-film encapsulation according to claim 16 , wherein the thickness of the CVD layer is 2 nm to 20 nm.21. The thin-film encapsulation according to claim 16 , wherein the CVD layer is at least one selected from the group consisting of silicon claim 16 , silicon oxide claim 16 , silicon nitride and titanium nitride.22. The thin-film encapsulation according to claim 16 , which comprises a plurality of CVD layers and PVD layers arranged alternately.23. The thin-film encapsulation according to claim 16 , wherein a further PVD layer deposited by a PVD method is arranged on the etched-back CVD layer.24. The thin-film encapsulation according to claim 16 , wherein the CVD layer comprises an electrically insulating material.25. An optoelectronic semiconductor body comprising a thin-film encapsulation according to claim 16 , which encapsulates a metallic element of the semiconductor body.26. The optoelectronic semiconductor body according to claim 25 , Wherein the metallic element is an electrical contact or a reflective layer.27. The optoelectronic semiconductor body according to claim 25 , ...

CARRIER SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR CHIPS

A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage. 1. A carrier substrate for a semiconductor layer sequence comprising:a first major face;a second major face opposite the first major face; anda diode structure formed between the first major face and the second major, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.2. The carrier substrate according to claim 1 , wherein the diode structure electrically insulates the first major face from the second major face with regard to both polarities.3. The carrier substrate according to claim 1 , wherein the diode structure comprises a first diode and a second diode claim 1 , the first diode and the second diode being oppositely oriented with regard to their conducting direction.4. The carrier substrate according to claim 1 , which contains a semiconductor material.5. The carrier substrate according to claim 1 , wherein the diode structure is formed by layered doping of the carrier substrate.6. The carrier substrate according to claim 1 , wherein which the diode structure comprises at least three successive layers configured alternately with regard to their conduction type.7. A semiconductor chip comprising a semiconductor body with a semiconductor layer sequence and a carrier with a first major face and a second major face opposite the first major face claim 1 , the semiconductor body arranged on the first major face of the carrier and a diode structure formed between the first major face and the second major face claim 1 , which diode structure electrically insulates the first major face from the second major face at least with ...

METHOD FOR PRODUCING A SEMICONDUCTOR BODY

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser. 1. A method of producing a semiconductor body comprising:providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer comprises a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, removing the transmissive layer within the separating region,', 'applying an absorbent layer within the separating region,', 'increasing the absorption coefficient of the transmissive layer within the separating region, and, 'carrying out at least one ofseparating the chip regions along the separating regions by a laser.2. The method according to claim 1 , whereinthe layer sequence has, within the chip regions an active zone that generates electromagnetic radiation, andthe separating region completely penetrates through the active zone.3. The method according to claim 1 , wherein the transmissive layer is a passivation layer.4. The method according to claim 1 , wherein the transmissive layer comprises one of oxides and nitrides.5. The method according to claim 1 , wherein the thickness of the transmissive layer is 3 nm to 500 nm.6. The method according to claim 1 , wherein the transmissive layer ...

METHOD FOR SINGULATING A COMPONENT COMPOSITE ASSEMBLY

A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier. 1. A method for singulating a component composite assembly into a plurality of component regions comprising the following steps:a) providing a component composite assembly having a semiconductor layer sequence, which has an active region provided for generating or for receiving electromagnetic radiation;b) fixing the component composite assembly to a rigid auxiliary carrier;c) singulating the component composite assembly into the plurality of component regions, wherein for each component region a respective semiconductor body emerges from the semiconductor layer sequence; andd) removing the component regions from the auxiliary carrier.2. The method according to claim 1 , wherein the component composite assembly is fixed on the auxiliary carrier by means of a metallic connection.3. The method according to claim 1 , wherein the component regions are removed from the auxiliary carrier by means of a laser detachment method.4. The method according to claim 1 , wherein claim 1 , before step d) claim 1 , side faces of the component regions are formed by means of a plasma method.5. The method according to claim 4 , wherein the component composite assembly is severed by means of the plasma method in step c).6. The method according to claim 4 , wherein the side faces of the component regions are formed by means of the plasma method after the component composite assembly has been singulated.7. The method according to claim 1 , wherein ...

OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING A FIRST AND SECOND METAL LAYER AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT

An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active zone, wherein the first semiconductor layer and the second semiconductor layer are patterned to form a mesa so that parts of the second semiconductor layer are not covered by the first semiconductor layer and a portion of the active zone is exposed in the area of a mesa flank. The optoelectronic semiconductor component may include a passivation layer arranged over parts of the first semiconductor layer and over parts of the second semiconductor layer and over the exposed portion of the active zone. The optoelectronic semiconductor component furthermore contains a first metal layer and a second metal layer. The second metal layer covers the passivation layer in the area of the mesa flank. 1. An optoelectronic semiconductor component comprising: 'the first semiconductor layer is arranged over the second semiconductor layer, the active zone is arranged between the first and second semiconductor layer and the first semiconductor layer and the second semiconductor layer are patterned to form a mesa so that parts of the second semiconductor layer are free from the first semiconductor layer and a portion of the active zone is exposed in the area of a mesa flank;', 'a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active zone whereina passivation layer arranged over parts of the first semiconductor layer and over parts of the second semiconductor layer and over the exposed portion of the active zone;a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer;wherein the second metal layer covers the passivation layer in the area of the mesa flank and a composition of the first metal layer adjacent to the first ...

SEMICONDUCTOR CHIP

A semiconductor chip includes an electrically insulating layer including a first opening and a second opening, an electrically conductive first connection point, and an electrically conductive second connection point, wherein a carrier mechanically connects to a semiconductor body, the active region electrically connects to a first conductor body and a second conductor body, the electrically insulating layer covers the carrier on a side thereof facing away from the semiconductor body, the first connection point electrically connects to the first conductor body through the first opening, the second connection point electrically connects to the second conductor body through the second opening, the first conductor body is at a first distance from a second conductor body, the first connection point is at a second distance from the second connection point, and the first distance is less than the second distance. 114-. (canceled)15. A semiconductor chip comprising:a semiconductor body comprising an active region,a carrier comprising a first conductor body, a second conductor body and a shaped body,an electrically insulating layer comprising a first opening and a second opening,an electrically conductive first connection point, andan electrically conductive second connection point, whereinthe carrier mechanically connects to the semiconductor body,the active region electrically connects to the first conductor body and the second conductor body,the electrically insulating layer covers the carrier on the side thereof facing away from the semiconductor body,the first connection point electrically connects to the first conductor body through the first opening,the second connection point electrically connects to the second conductor body through the second opening,the first conductor body is at a first distance from a second conductor body,the first connection point is at a second distance from the second connection point, andthe first distance is less than the second distance. ...

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

In one embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence and an electrical via. The semiconductor layer sequence includes an active zone for generating radiation and a contact layer for electrical contacting. The active zone lies in a plane perpendicular to a main growth direction of the semiconductor layer sequence and is located between a first semiconductor region and a second semiconductor region. The contact layer is located within the second semiconductor region. The via extends through the contact layer and preferably ends within the second semiconductor region. A contact surface between the via and the contact layer encloses a contact angle of at least 20° and at most 60° with respect to the plane.

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT

The invention relates to a semiconductor component comprising at least one semiconductor chip () having a semiconductor body () with an active region (), a conversion element () and a carrier (), the carrier () comprising a first moulded body (), a first conductor body () and a second conductor body (), the conductor body () being connected to the active region () in an electrically conducting manner. A side of the conversion element () facing away from the active region () forms a front side () of the semiconductor chip () and a side of the carrier () facing away from the active region () forms a rear side () of the semiconductor chip (), and lateral surfaces () of the semiconductor chip connect the front side () and the rear side () together. The semiconductor component also comprises a second moulded body (), the semiconductor chip () fully penetrating the second moulded body () in such a way that the second moulded body () forms a frame around the semiconductor chip (), and the front side () and the rear side () of the semiconductor chip () are free from the second moulded body () at least in places, and the second moulded body () at least partially covers free surfaces of the conversion element () on the lateral surfaces of the semiconductor chip (). 1. Semiconductor componentwith at least one semiconductor chip, comprising a semiconductor body having an active region, a conversion element and a carrier, and the carrier comprises a first molded body, a first conductor body and a second conductor body, and the conductor bodies are electrically connected to the active region, and in which a side of the conversion element facing away from the active region forms a front side of the semiconductor chip and a side of the carrier remote from the active region has a rear side of the semiconductor chip, and side surfaces of the semiconductor chip connect front and rear, andwith a second molded body, whereinthe semiconductor chip completely penetrates through the second ...

Unknown

A method of producing optoelectronic semiconductor components includes A) providing a semiconductor layer sequence on a carrier top of a carrier, B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces, C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure, wherein step D) takes place without an additional etching mask for the anisotropic etching. 114-. (canceled)16. The method according to claim 15 , whereinan active zone of the semiconductor layer sequence for the production of light is located in the mesa structure and the active zone is enclosed by the flank coating,the finished semiconductor components are light-emitting diodes,the carrier top is exposed in places in step B), andin step D), the carrier top and a mesa top of the mesa structure remote from the carrier are freed from the cladding and the flank coating is retained as far as the carrier top and as far as the mesa top, respectively, with a tolerance of at most 100% of the mean thickness of the flank coating.17. The method according to claim 16 , whereinthe mesa structure following step D) projects above the flank coating in a direction away from the carrier by at least 20 nm and at most 0.5 μm,the active zone reaches as far as the side faces and on the side faces is covered completely by the flank coating, andthe active zone inside the associated mesa structure is a continuous, coherent and unbroken layer.18. The method according to claim 15 , wherein{'b': 10', '1, 'the mean thickness of the flank coating is nm to μm,'}a mean angle ...

OPTOELECTRONIC ARRANGEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC ARRANGEMENT

A surface-mountable electrical device, an assembly including the surface-mountable electrical device, and a method for producing the surface-mountable electrical device is provided. The surface-mountable electrical device includes at least one electrical component which is a semiconductor component and which is intended for generating radiation, a control circuit for pulsed operation of the component, and a capacitor which is connected to the component electrically in series and which is configured for the pulsed energization of the component. The surface-mountable electrical device further includes a lead frame assembly having a plurality of different lead frames as a mounting platform for the component, the capacitor and the control circuit, wherein at least one of the different lead frames of the lead frame assembly is thinner than a further lead frame of the different lead frames and the lead frame assembly lies only partially in a mounting side of the device. 1. An optoelectronic arrangement comprising:an electrical insulating body having a top surface and a bottom surface facing away from the top surface,a first pixel group, to which a multiplicity of pixels are assigned, wherein each pixel has a first semiconductor region, a second semiconductor region and an active region that emits and/or absorbs electromagnetic radiation during the operation of the arrangement,a multiplicity of separating structures arranged between the pixels, andat least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the bottom surface, whereinthe pixels of the first pixel group are arranged alongside one another at the top surface,the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are spatially separated from one another by means of the separating structures,the first contact structure is assigned one-to-one to the first pixel group,the first ...

µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm. 1{'claim-text': ['an electrically conductive structure comprising an upper major surface and a lower major surface separated from the upper major surface by a distance;', 'a cavity in the electrically conductive structure and which has a width and length;', 'a semiconductor layer stack along the first main direction arranged in the cavity and extending at least over the upper main surface, the semiconductor layer stack having', 'an active layer;', 'a first electrical contact;', 'a second electrical contact;', 'the length of the cavity is based essentially on n/2 of a wavelength of light to be emitted during operation, where n is a natural number;'], '#text': 'at least one light-emitting device, in particular at least one μ-LED, which comprises:'}{'claim-text': ['at least one μ-LED or optoelectronic semiconductor device comprising a three-dimensional light-emitting heterostructure having a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; wherein', 'the light-emitting heterostructure comprises aluminium gallium arsenide and/or aluminium gallium indium phosphide and/or aluminium gallium indium phosphide arsenide; and', 'the light-emitting heterostructure is formed three-dimensionally by growing on a mold layer comprising a {110} oriented side surface and selectively epitaxially deposited on a gallium arsenide (111) B epitaxial substrate, optionally a flat top surface {111} may be envisaged;'], '#text': 'and/or'}{'claim-text': ['at least two μ-LEDs, in particular an array of μ-LEDs, wherein a respective μ-LED between an n-doped layer and a p-doped layer forms an active layer suitable for light emission; and', 'between two adjacent formed μ-LEDs material of the layer sequence from the ...

OPTOELECTRONIC SEMICONDUCTOR DEVICE

An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation. 115-. (canceled)16. An optoelectronic semiconductor device having a semiconductor body comprising a semiconductor layer sequence with an active region that generates radiation , a semiconductor layer and a further semiconductor layer , whereinthe active region is arranged between the semiconductor layer and the further semiconductor layer;a current spreading layer is arranged on a radiation exit face of the semiconductor body;the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer;in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region; andthe current spreading layer comprises a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.17. The semiconductor device according to claim 16 , wherein the recesses are at least partly elongate when viewed in the plan view of the semiconductor device claim 16 , and in a longitudinal direction the recesses have a lengthwise extent at least 20% greater than a crosswise extent in a ...

METHOD FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS AND DEVICE FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS

A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified. 1. A method for sorting optoelectronic semiconductor components each comprising an active region for emission or detection of electromagnetic radiation , comprising the following steps:introducing the semiconductor components into a sorting region on a specified path,irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components, anddeflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field.2. The method for sorting optoelectronic semiconductor components according to claim 1 , wherein different groups of optoelectronic semiconductor components are configured for emission or detection of electromagnetic radiation within different wavelength ranges.3. The method for sorting optoelectronic semiconductor components according to claim 2 , wherein the electromagnetic radiation of the first wavelength range comprises such a wide bandwidth that all groups of optoelectronic semiconductor components are excited.4. ...

µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

µ-Led, µ-Led Device, Display And Method For The Same

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm. 1. A μ-display or μ-LED display module , comprising:an all-surface target matrix formed on a first carrier, which has rows and columns of μ-LEDs, occupy-able locations; 'at least one layer stack forming a base module, with a first layer formed on a carrier, an active layer and a second layer, wherein a first contact is formed in or on a surface region of the second layer facing away from the carrier, and a second contact is formed in or on the surface region of the first layer facing away from the carrier, and the first and second contact are spaced apart from one another;', 'one or more μ-LED modules, each μ-LED module comprisingwherein the size of the base modules corresponds to the vacant positions; andwherein the μ-LED modules are positioned and electrically connected to the first carrier in the target matrix in such a way that a number of base modules remain unoccupied in the target matrix, at least some of which each have at least one sensor element positioned and electrically connected.2. The μ-display or μ-LED display module according to claim 1 , wherein a plurality of full-surface target matrices formed on the first carrier and of equal or different size to one another are formed along rows and columns with target matrix-occupy-able locations at respective distances from one another.3. The μ-display or μ-LED display module according to claim 1 , wherein the base modules form rectangles in a matrix plane claim 1 , and in μ-LED modules any number of base modules adjacent to each other along a common side are grouped together.4. The μ-display or μ-LED display module according to claim 1 , wherein at least one μ-LED module comprises four base modules in two rows and two columns.5. The μ-display or μ-LED display module ...

u-LED, u-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm. 1. Method for producing modules of μ-LEDs , comprising the steps of:generating at least one layer stack providing a base module on a carrier having a first layer, an active layer applied thereto and a second layer formed thereon;exposing a surface area of the first layer facing away from the substrate;forming a first contact on a surface area of the second layer facing away from the carrier;forming a second contact on the surface area of the first layer facing away from the carrier.2. Method according to claim 1 , characterized in that forming a second contact comprises:forming an electrically insulating dielectric over a portion of the active layer and the second layerforming the second contact with a conductive material, which electrically contacts the remote surface area of the first layer via the dielectric to a surface area of the second layer remote from the carrier.3. Method according to claim 1 , characterised byexposing the surface region of the first layer remote from the substrate by means of a flat edge structuring of the at least one stack of layers, in particular from the side of the second layer, a flat trench in particular being produced around the respective stack of layers.4. Method according to claim 1 , characterised bygenerating a plurality of base modules as a matrix along an X-Y plane along at least one row and along at least one column, wherein base modules of a respective row are oriented in the same way.5. Method according to claim 4 , characterized in thatthe base modules of two adjacent lines are oriented in the same way; or thatthe base modules of two adjacent lines are oriented in opposite directions, whereby contacts of the same polarity, in particular first contacts, are thus arranged adjacent to ...

Method for Producing a Plurality of Semiconductor Chips Having a Mask Layer with Openings and Semiconductor Chip Having a Mask Layer with Openings

A semiconductor chip is disclosed. In an embodiment a semiconductor chip includes a multiply-connected mask layer comprising openings, the openings completely penetrate the mask layer and a semiconductor layer sequence, which, at least in places, is in direct contact with the mask layer, wherein the semiconductor layer sequence is disposed on the mask layer, wherein the mask layer comprises a light-transmissive material, and wherein the light-transmissive material comprises an optical refractive index for light which is smaller than a refractive index of the semiconductor layer sequence. 1. A semiconductor chip comprising:a multiply-connected mask layer comprising openings, the openings completely penetrate the mask layer; anda semiconductor layer sequence, which, at least in places is in direct contact with the mask layer,wherein the semiconductor layer sequence is disposed on the mask layer,wherein the mask layer comprises a light-transmissive material, andwherein the light-transmissive material comprises an optical refractive index for light which is smaller than a refractive index of the semiconductor layer sequence.2. The semiconductor chip according to claim 1 , wherein the semiconductor layer sequence includes an active region configured to generate light.3. The semiconductor chip according to claim 1 , wherein the mask layer includes four or more openings.4. The semiconductor chip according to claim 1 , further comprising a growth substrate having a growth surface claim 1 , wherein the growth surface comprises sapphire.5. The semiconductor chip according to claim 4 , wherein the semiconductor layer sequence is in regions of the openings claim 4 , at least in places in direct contact with the growth surface of the growth substrate.6. The semiconductor chip according to claim 4 , wherein the optical refractive index of the light-transmissive material of the mask layer is smaller than a refractive index of the growth substrate.7. The semiconductor chip ...

Optoelectronic Semiconductor Component and Production Method

An optoelectronic semiconductor component and a production method are disclosed. In an embodiment an optoelectronic semiconductor component includes a light-emitting diode chip including a semiconductor layer sequence configured to generate radiation, electrical contact points on a mounting side, a carrier body and an anti-wetting layer being exposed laterally at the light-emitting diode chip and being located between the semiconductor layer sequence and the carrier body and/or being located in a lateral direction next to the semiconductor layer sequence, a filling permeable to the radiation and a reflector for the radiation, wherein the anti-wetting layer has a repellent effect on at least one of a material of the reflector or of the filling, and wherein the filling and the reflector adjoin each other at the exposed anti-wetting layer.

OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC MODULE

An optoelectronic semiconductor chip includes a carrier and a semiconductor body arranged on the carrier with a semiconductor layer sequence, wherein the semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation, the first semiconductor layer connects to a first contact in an electrically-conductive manner, the first contact is formed on a rear side of the carrier facing away from the semiconductor body, the second semiconductor layer connects to both a second contact and a third contact in an electrically-conductive manner, and the second contact is formed on the front side of the carrier facing towards the semiconductor body and the third contact on the rear side of the carrier facing away from the semiconductor body. 115.-. (canceled)16. An optoelectronic semiconductor chip comprising a carrier and a semiconductor body arranged on the carrier with a semiconductor layer sequence , whereinthe semiconductor layer sequence comprises an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation,the first semiconductor layer connects to a first contact in an electrically-conductive manner,the first contact is formed on a rear side of the carrier facing away from the semiconductor body,the second semiconductor layer connects to both a second contact and a third contact in an electrically-conductive manner, andthe second contact is formed on the front side of the carrier facing towards the semiconductor body and the third contact on the rear side of the carrier facing away from the semiconductor body.17. The semiconductor chip according to claim 16 , wherein the carrier comprises an electrically-conductive material claim 16 , a semiconducting material and/or a molding material.18. The semiconductor chip according to claim 16 , wherein the first semiconductor ...

OPTOELECTRONIC SEMICONDUCTOR COMPONENT, OPTOELECTRONIC ARRANGEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS) on a side facing the substrate (T), and the first contact layer (KS) contains aluminium or consists of aluminium. 1. An optoelectronic semiconductor component with an electrically conductive carrier,', 'an active part, which contains epitaxially grown layers, and', 'an intermediate layer, which is arranged between the carrier and the active part and contains a solder material, and', 'an electrical connection point, which at least partly covers an underside of the carrier, wherein', 'the electrical connection point comprises a first contact layer on a side facing towards the carrier, and', 'the first contact layer contains or consists of aluminum., 'an optoelectronic semiconductor chip comprising'}2. The optoelectronic semiconductor component according to with a molded body claim 1 , which comprises an electrically insulating material and which at least partly surrounds the optoelectronic semiconductor chip laterally claim 1 , whereinthe electrical connection point at least partly, and in particular completely, covers an underside of the molded body, andthe first contact layer borders the underside of the molded body.3. The optoelectronic semiconductor component according to claim 1 , wherein the carrier contains silicon or germanium or consists of silicon or germanium.4. The optoelectronic semiconductor component according to claim 1 , wherein the carrier has a thickness of at least 50 μm.5. The ...

LIGHT EMITTING DIODE CHIP

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side. 1. A light emitting diode chip comprising a semiconductor layer sequence having an active layer that generates electromagnetic radiation , whereinthe light emitting diode chip has a radiation exit area at a front side,the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver,a protective layer is arranged on the mirror layer,the protective layer comprises a transparent conductive oxide,the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer,the light emitting diode chip comprises a first electrical connection layer and a second electrical connection layer,the first electrical connection layer and the second electrical connection layer face the rear side of the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer, anda partial region of the second electrical connection layer extends from the rear side of the semiconductor layer ...

COMPONENT AND METHOD OF MANUFACTURING COMPONENTS

A component includes a carrier; and a semiconductor body arranged on the carrier, wherein the semiconductor body includes a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween, the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component, the carrier includes a mirror layer disposed between the semiconductor body and the carrier layer, and the carrier has a compensating layer directly adjacent to the carrier layer and configured to compensate for internal mechanical strains in the component. 118-. (canceled)19. A component comprising:a carrier; anda semiconductor body arranged on the carrier, whereinthe semiconductor body comprises a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween,the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component,the carrier comprises a mirror layer disposed between the semiconductor body and the carrier layer, andthe carrier has a compensating layer directly adjacent to the carrier layer and configured to compensate for internal mechanical strains in the component.20. The component according to claim 19 , wherein the compensating layer is formed as a planar layer and has a substantially constant layer thickness along lateral directions.21. The component according to claim 19 , wherein the carrier layer and the compensating layer each have a substantially constant layer thickness along lateral directions and are free of vertical elevations and/or vertical branches.22. The component according to claim 19 , wherein the carrier layer is formed as a mechanically self-supporting layer so that the component is mechanically supported by the carrier layer and claim 19 , with the exception of the metallic carrier layer and/or the compensating layer claim 19 , the ...

METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP AND OPTOELECTRONIC SEMICONDUCTOR CHIP

The invention relates to a method for producing an optoelectronic semiconductor chip (). A semiconductor layer sequence () is provided, comprising a first semiconductor layer () and a second semiconductor layer (). Furthermore, a first contact layer () is provided which extends laterally along the first semiconductor layer () and electrically contacts same. A third semiconductor layer () is applied onto a first contact layer () face facing away from the semiconductor layer sequence (). A recess () is formed which extends through the third semiconductor layer (), the first contact layer (), and the first semiconductor layer () into the second semiconductor layer (). A passivation layer () is applied onto a third semiconductor layer () face facing away from the the semiconductor layer sequence (). At least one first () and at least one second passage opening () are formed in the passivation layer (). A second contact layer () is applied which electrically contacts the second semiconductor layer () in the region of the at least one first passage opening () and the third semiconductor layer () in the region of the at least one second passage opening (). The invention additionally relates to an optoelectronic semiconductor chip (). 1. A method for producing an optoelectronic semiconductor chip , comprising the steps:a) Providing a semiconductor layer sequence including a first semiconductor layer and a second semiconductor layer, as well as a first contact layer, which extends laterally along the first semiconductor layer and electrically contacts the same;b) Applying a third semiconductor layer on a side of the first contact layer facing away from the semiconductor layer sequence;c) Forming a recess, which extends through the third semiconductor layer, the first contact layer and the first semiconductor layer and into the second semiconductor layer;d) Applying a passivation layer on a side of the third semiconductor layer facing away from the semiconductor layer ...

OPTOELECTRONIC SEMICONDUCTOR COMPONENT

An optoelectronic semiconductor component is disclosed, comprising: a semiconductor body () having a semiconductor layer sequence () with a p-type semiconductor region (), an n-type semiconductor region (), and an active layer () arranged between the p-type semiconductor region () and the n-type semiconductor region (); a support () having a plastic material and a first via () and a second via (); a p-contact layer () and an n-contact layer (), at least some regions of which are arranged between the support () and the semiconductor body (), wherein the p-contact layer () connects the first via () to the p-type semiconductor region () and the n-contact layer (A) connects the second via () to the n-type semiconductor region (); and an ESD protection element () which is arranged between the support () and the semiconductor body (), wherein the ESD protection element () is electrically conductively connected to the first via () and to the second via (), and wherein a forward direction of the ESD protection element () is anti-parallel to a forward direction of the semiconductor layer sequence (). 1. Optoelectronic semiconductor device witha semiconductor body which comprises a semiconductor layer sequence with a p-type semiconductor region, an n-type semiconductor region and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region,a carrier, which comprises a plastics material and comprises a first through-via and a second through via,a p-connection layer and an n-connection layer, which are arranged at least in places between the carrier and the semiconductor body, wherein the p-connection layer connects the first through-via with the p-type semiconductor region and the n-connection layer connects the second through-via with the n-type semiconductor region,an ESD protective element, which is arranged between the carrier and the semiconductor body, wherein the ESD protective element is electrically conductively connected with ...

Method for Producing Optoelectronic Conversion Semiconductor Chips and Composite of Conversion Semiconductor Chips

A method for producing optoelectronic conversion semiconductor chips and a composite of conversion semiconductor chips are disclosed. In an embodiment the method includes growing a semiconductor layer sequence on a growth substrate, applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate, thinning the growth substrate, after thinning, cutting the growth substrate at least to the semiconductor layer sequence thereby forming a first intermediate space, applying a conversion layer on to the thinned growth substrate and singulating at least the thinned growth substrate and the semiconductor layer sequence. 114-. (canceled)15. A method for producing optoelectronic conversion semiconductor chips , the method comprising:providing a growth substrate;growing a semiconductor layer sequence on the growth substrate;applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate;thinning the growth substrate;after thinning, cutting the growth substrate at least to the semiconductor layer sequence thereby forming a first intermediate space;applying a conversion layer on to the thinned growth substrate, wherein the conversion layer is also arranged in this first intermediate space; andsingulating at least the thinned growth substrate and the semiconductor layer sequence for producing the optoelectronic conversion semiconductor chips.16. The method according to claim 15 ,wherein applying the conversion layer comprising applying the conversion layer directly on to the thinned growth substrate, wherein the conversion layer is configured to convert the primary radiation emitted by the semiconductor layer sequence at least partially into a secondary radiation different from the primary radiation.17. The method according to claim 15 , wherein the growth substrate is cut exactly to the semiconductor layer sequence for forming the first intermediate space.18. The ...

OPTOELECTRONIC COMPONENT AND A METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on a mold body, the boundary layer is formed from a radiation-transmitting dielectric material having a refractive index of 1 to 2, and a layer thickness of the boundary layer is at least 400 nm and selected such that an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer. 116-. (canceled)17. An optoelectronic component comprising a carrier having an electrically insulating mold body , a semiconductor body having an active layer configured to generate electromagnetic radiation during operation of the component and a multilayer structure , whereinthe mold body surrounds the semiconductor body laterally at least in places,the multilayer structure is arranged between the semiconductor body and the mold body in a lateral direction at least in places, andthe multilayer structure comprises at least one metallic layer and a non-metallic boundary layer, whereinthe boundary layer is arranged between the semiconductor body and the metallic layer in the lateral direction, adjoins the semiconductor body at least in places, covers the active layer laterally, and has a lower refractive index compared to the semiconductor body,the metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on the mold body,the boundary layer is formed ...

ELECTRICAL CONTACT STRUCTURE FOR A SEMICONDUCTOR COMPONENT, AND SEMICONDUCTOR COMPONENT

An electrical contact structure () for a semiconductor component () is specified, comprising a transparent electrically conductive contact layer (), on which a first metallic contact layer () is applied, a second metallic contact layer (), which completely covers the first metallic contact layer (), and a separating layer (), which is arranged between the transparent electrically conductive contact layer () and the second metallic contact layer () and which separates the second metallic contact layer () from the transparent electrically conductive contact layer (). 1. Electrical contact structure for a semiconductor component comprisinga transparent electrically conductive contact layer, on which a first metallic contact layer is applied,a second metallic contact layer, which completely covers the first metallic contact layer, anda separating layer, which is arranged between the transparent electrically conductive contact layer and the second metallic contact layer and which separates the second metallic contact layer from the transparent electrically conductive contact layer.2. Contact structure according to claim 1 , wherein the separating layer projects below the second metallic contact layer.3. Contact structure according to claim 1 , wherein a barrier layer is arranged between the first and second metallic contact layers claim 1 , the barrier layer completely covering the first metallic contact layer and being covered by the second metallic contact layer.4. Contact structure according to claim 1 , wherein the barrier layer partly covers the separating layer.5. Contact structure according to claim 3 , wherein the barrier layer is arranged directly on the transparent electrically conductive contact layer in a region surrounding the first metallic contact layer.6. Contact structure according to claim 1 , wherein the separating layer is transparent and comprises a dielectric material.7. Contact structure according to claim 1 , wherein the separating layer comprises ...

Component for displaying a pictogram and method of producing a component

A component includes a carrier, a semiconductor body and a mirror layer located therebetween, wherein the semiconductor body includes an active layer configured to generate light during operation of the component, the component has a main surface that illuminates during operation, wherein luminous areas of the main surface represent visually detectable information as a pictogram, in a plan view of the main surface, the pictogram has a contour at least partially defined by a contour of the mirror layer, and in a plan view of the main surface, the component has an outline different from the contour of the pictogram.

OPTOELECTRONIC COMPONENT AND A METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT

A component includes a carrier with a mold body made of an electrically insulating plastic material and a metal layer, wherein the metal layer includes a first subregion and a second subregion, and at least one of the subregions extends in a vertical direction through a mold body to electrically contact a semiconductor body, and the first and second segments are spatially separated from one another in a lateral direction and electrically conductively connect to one another via a connecting structure, wherein the connecting structure, the first subregion and the second subregion adjoin the mold body and are arranged on the same side of the semiconductor body. 120.-. (canceled)21. A component comprising a carrier and a semiconductor body arranged on the carrier , whereinthe semiconductor body has at least a first segment and a second segment, and the segments are constructed in the same manner and each have a first semiconductor layer facing away from the carrier, a second semiconductor layer facing towards the carrier, and an active layer arranged in a vertical direction between the first and the second semiconductor layers,the carrier comprises a mold body made of an electrically insulating plastic material and a metal layer, wherein the metal layer comprises a first subregion and a second subregion, and at least one of the subregions extends in the vertical direction through the mold body to electrically contact the semiconductor body, andthe first and second segments are spatially separated from one another in a lateral direction and electrically conductively connect to one another via a connecting structure, wherein the connecting structure, the first subregion and the second subregion adjoin the mold body and are arranged on the same side of the semiconductor body.22. The component according to claim 21 , wherein the connecting structure claim 21 , the first subregion and the second subregion claim 21 , in a plan view claim 21 , are free of overlaps.23. The ...

METHOD OF PRODUCING A SEMICONDUCTOR BODY

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser. 1. A method of producing a semiconductor body comprising: 1) removing the transmissive layer within the separating region before starting a separation process with help of a laser,', '2) applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and', '3) increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser., 'providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer comprises a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of2. The method according to claim 1 , wherein the layer sequence has claim 1 , within the chip regions claim 1 , an active zone that generates electromagnetic radiation claim 1 , and the ...

OPTOELECTRONIC ARRANGEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC ARRANGEMENT

An optoelectronic arrangement is specified, comprising a moulded body () having a base surface (), a first pixel group () with a multiplicity of pixels () assigned thereto, each having a first semiconductor region (), a second semiconductor region () and an active region (), a multiplicity of separating structures () arranged between the pixels (), and at least one first contact structure () having a first contact plane () and a first contact location (), which is freely accessible at the base surface (), wherein the pixels () of the first pixel group () are arranged alongside one another at the top surface (), the first semiconductor regions () and/or the second semiconductor regions () of adjacent pixels () of the first pixel group () are electrically insulated from one another by means of the separating structures (), a first contact structure () is assigned one-to-one to the first pixel group (), and the first semiconductor regions () of the pixels () of the first pixel group () are electrically conductively connected to one another by means of the first contact plane () and are electrically contactable by means of the first contact location (). 1. Optoelectronic arrangement comprising:a moulded body embodied as a carrier and having a top surface and a bottom surface facing away from the top surface,a first pixel group, to which a multiplicity of pixels are assigned, each having a first semiconductor region, a second semiconductor region and an active region that emits and/or absorbs electromagnetic radiation during the operation of the arrangement,a multiplicity of separating structures arranged between the pixels, andat least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the bottom surface, whereinthe pixels of the first pixel group are arranged alongside one another at the top surface,the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first ...

Component and method of producing components

A component includes a carrier having a front side facing towards a semiconductor body and a rear side facing away from the semiconductor body, each of which is formed at least in places by a surface of a shaped body, a metal layer contains a first sub-region and a second sub-region, wherein the first sub-region and the second sub-region adjoin the shaped body in a lateral direction, are electrically connectable in a vertical direction on the front side of the carrier, are assigned to different electrical polarities of the component and are thus configured to electrically contact the semiconductor body, and the carrier has a side face running perpendicularly or obliquely to the rear side of the carrier and is configured as a mounting surface of the component, wherein at least one of the sub-regions is electrically connectable via the side face and exhibits singulation traces.

Optoelectronic Component, Method for Manufacturing an Optoelectronic Component and Method for Operating an Optoelectronic Component

An optoelectronic component, a method for manufacturing an optoelectronic component and a method for operating an optoelectronic component are disclosed. In an embodiment, the component includes a carrier comprising a molded body and a light-emitting semiconductor body with a first segment and a second segment, wherein the first segment and the second segment are spatially separated from one another, and wherein each segment has an emission side facing away from the carrier. The component further includes a first electrical conductor path arranged on the first segment and on the second segment on a side of the light-emitting semiconductor body facing towards the carrier and a first electrical connecting structure and a second electrical connecting structure, each electrically connecting the first segment and the second segment to one another, wherein the first and second electrical connecting structure are electrically connected to one another by the first electrical conductor path.

LIGHT EMITTING DIODE CHIP

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide. 114.-. (canceled)15. A light emitting diode chip comprising a semiconductor layer sequence having an active layer that generates electromagnetic radiation , whereinthe light emitting diode chip has a radiation exit area at a front side,the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver,a protective layer is arranged on the mirror layer, andthe protective layer comprises a transparent conductive oxide.16. The light emitting diode chip according to claim 15 , wherein the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer.17. The light emitting diode chip according to claim 15 , wherein the protective layer comprises ZnO claim 15 , ZnO:Ga claim 15 , ZnO:Al claim 15 , ITO claim 15 , IZO or IGZO.18. The light emitting diode chip according to claim 15 , wherein the protective layer has a thickness of 5 nm to 500 nm.19. The light emitting diode chip according to claim 18 , wherein the protective layer has a thickness of 10 nm to 100 nm.20. The light emitting diode chip according to claim 15 , wherein side flanks of the mirror layer and/or of the protective layer are covered by an electrically insulating layer at least in regions.21. The light emitting diode chip according to claim 20 , wherein the electrically insulating layer is an oxide or nitride layer.22. The light emitting diode chip according to claim 15 , ...

RADIATION-EMITTING SEMICONDUCTOR CHIP, METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING SEMICONDUCTOR CHIPS AND OPTOELECTRONIC COMPONENT HAVING A RADIATION-EMITTING SEMICONDUCTOR CHIP

Disclosed is a radiation-emitting semi-conductor chip () comprising an epitaxial semi-conductor layer sequence () which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence () is applied on a a transparent substrate (), wherein the substrate () has a first main surface () facing the semi-conductor layer sequence (), a second main surface () facing away from the semi-conductor layer sequence () and a first lateral flank () arranged between the first main surface () and the second main surface (), and the lateral flank () has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip. 1. A radiation-emitting semiconductor chip having:an epitaxial semiconductor layer sequence, which emits electromagnetic radiation during operation,a transparent carrier, onto which the epitaxial semiconductor layer sequence is applied, whereinthe carrier comprises a first main surface facing the semiconductor layer sequence, a second main surface facing away from the semiconductor layer sequence and a lateral flank arranged between the first main surface and the second main surface, andthe lateral flank comprises an out-coupling structure, which is formed in a targeted manner from singulation traces.2. The radiation-emitting semiconductor chip according to claim 1 ,in which the lateral flank is inclined along its entire length in the vertical direction relative to a normal of the first main surface and/or the second main surface of the carrier.3. The radiation-emitting semiconductor chip according to claim 1 ,in which the out-coupling structure comprises a plurality of similar structural elements, which are arranged in a regular and/or periodic pattern.4. The radiation-emitting semiconductor chip according to claim 1 ,in which the singulation traces form a sawtooth-shaped out-coupling structure of the ...

Radiation-Emitting Semiconductor Chip, Method for Producing a Plurality of Radiation-Emitting Semiconductor Chips, Radiation-Emitting Component and Method for Producing a Radiation-Emitting

A radiation-emitting semiconductor chip, a method for producing a plurality of radiation-emitting semiconductor chips, a radiation-emitting component and a method for producing a radiation-emitting component are disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer configured to generate electromagnetic radiation, a substrate on which the semiconductor layer sequence is arranged and which is transparent to the electromagnetic radiation, a reflective layer disposed on a main surface of the substrate facing away from the semiconductor layer sequence, the reflective layer including a resin in which reflective particles are embedded and a transparent resin layer located between the main surface of the substrate and the reflective layer.

Component and Method for Producing a Component

A component includes a semiconductor body, a carrier, and a stabilization layer arranged between the semiconductor body and the carrier in the vertical direction. The semiconductor body has a first semiconductor layer facing away from the carrier, a second semiconductor layer facing the carrier, and an active layer arranged between the first semiconductor layer and the second semiconductor layer. The carrier has a first via and a second via laterally spaced apart from the first via by means of an intermediate region. The first via is connected to the first semiconductor layer in an electrically conductive manner and the second via is connected to the second semiconductor layer in an electrically conductive manner. The stabilization layer is continuous, overlaps with the vias in a top view, and laterally bridges the intermediate region. The stabilization layer is electrically insulated from the vias and from the semiconductor body. 115-. (canceled)16. A component comprising:a carrier comprising a first through-contact and a second through-contact laterally spaced apart from the first through-contact by an intermediate region;a semiconductor body having a first semiconductor layer facing away from the carrier, a second semiconductor layer facing towards the carrier and an active layer arranged between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer is electrically conductively connected to the first through-contact and the second semiconductor layer is electrically conductively connected to the second through-contact; anda stabilization layer arranged in a vertical direction between the semiconductor body and the carrier, wherein the stabilization layer is formed in a contiguous manner, wherein the stabilization layer in a plan view has overlaps with the first and second through-contacts and laterally bridges the intermediate region, and wherein the stabilization layer is electrically isolated from the first and ...

Method for Producing an Optoelectronic Component

A method for producing an optoelectronic component is disclosed. In an embodiment the method includes a metallization with first mask structures is deposited directionally, and then a first passivation material is deposited non-directionally onto the metallization. Further, cutouts are introduced into the semiconductor body, such that the cutouts extend right into an n-type semiconductor region, and a second passivation material is applied on side faces of the cutouts. Furthermore, an n-type contact material is applied, structured and passivated. Moreover, contact structures are arranged on the semiconductor body and electrically connected to the n-type contact material and the metallization, wherein the contact structures and the semiconductor body are covered with a potting. 114-. (canceled)15. A method for producing an optoelectronic component , the method comprising:providing a semiconductor body having a p-type semiconductor region and an n-type semiconductor region;directionally depositing a metallization on the p-type semiconductor region using first mask structures, the first mask structures being wider in shape on a side facing away from the semiconductor body than on a side facing towards the semiconductor body;non-directionally depositing a first passivating material on the metallization;stripping the first mask structures;introducing recesses into the semiconductor body such that the recesses extend into the n-type semiconductor region;depositing a second passivating material on side faces of the recesses such that the second passivating material also covers a side face of the first passivating material;flat directionally depositing an n-contact material in the recesses and on the first passivating material using a second mask structure on the first passivating material, the second mask structure being wider in shape on a side facing away from the semiconductor body than on a side facing towards the semiconductor body;flat non-directionally depositing a ...

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING SAME

An optoelectronic semiconductor component includes an active layer arranged between a p-type semiconductor region and an n-type semiconductor region, a carrier including a plastic and a first via and a second via, a p-contact layer and an n-contact layer arranged between the carrier and a semiconductor body at least in some regions, wherein the p-contact layer electrically joins the first via and the p-type semiconductor region, and the n-contact layer electrically joins the second via and the n-type semiconductor region, a metallic reinforcing layer arranged at least in some regions between the n-contact layer and the carrier, wherein the metallic reinforcing layer is at least 5 μm thick, and at least one p-contact feed-through arranged between the first via and the p-contact layer, wherein the p-contact feed-through is at least 5 μm thick and surrounded in a lateral direction by the reinforcing layer at least in some regions. 119.-. (canceled)20. An optoelectronic semiconductor component comprising:a semiconductor body comprising a semiconductor layer sequence having a p-type semiconductor region, an n-type semiconductor region and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region,a carrier comprising a plastic and a first via and a second via,a p-contact layer and an n-contact layer arranged between the carrier and the semiconductor body at least in some regions, wherein the p-contact layer electrically joins the first via and the p-type semiconductor region, and the n-contact layer electrically joins the second via and the n-type semiconductor region,a metallic reinforcing layer arranged at least in some regions between the n-contact layer and the carrier, wherein the metallic reinforcing layer is at least 5 μm thick, andat least one p-contact feed-through arranged between the first via and the p-contact layer, wherein the p-contact feed-through is at least 5 μm thick and surrounded in a lateral direction by the ...

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT

The invention relates to a semiconductor component comprising: a semiconductor chip () which has a semiconductor body () with an active region () and a substrate () with a first conductor body (), a second conductor body () and a first moulded body (); and a second moulded body (); wherein the second moulded body () completely surrounds the semiconductor chip () in lateral directions (L), the semiconductor chip () extends all the way through the second moulded body () in a vertical direction (V), at least some parts of an upper side and a lower side of the semiconductor chip () are not covered by the second moulded body (), the substrate () is mechanically connected to the semiconductor body (), the active region () is connected to the first conductor body () and the second conductor body () in an electroconductive manner, and the second moulded body () is directly adjacent to the substrate () and the semiconductor body (). 1. A semiconductor component havinga semiconductor chip, which comprises a semiconductor body having an active region and a carrier having a first conductor body, a second conductor body and a first shaped body, anda second shaped body, whereinthe second shaped body completely surrounds the semiconductor chip in lateral directions (L),the semiconductor chip completely penetrates the second shaped body in a vertical direction (V),a top side and a bottom side of the semiconductor chip are free from the second shaped body at least in some places,the carrier is mechanically connected to the semiconductor body,the active region is electrically connected to the first conductor body and the second conductor body,the second shaped body directly borders the semiconductor chip, in particular the carrier and the semiconductor body.2. The semiconductor component according to claim 1 ,in which the second shaped body directly borders the first shaped body in some places.3. The semiconductor component according to claim 1 ,in which the second shaped body is ...

Reflective Contact Layer System for an Optoelectronic Component and Method for Producing Same

A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.

METHOD OF PRODUCING SEMICONDUCTOR CHIPS

A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Method for Producing an Optoelectronic Device

A method for producing an optoelectronic device is disclosed. The method include preforming an inductive excitation of a current by an inductive component of the optoelectronic device such that the optoelectronic device emits electromagnetic radiation, measuring of at least one electro-optical characteristic of the optoelectronic device and applying a converter material to an emission side of the optoelectronic device, wherein a quantity of the converter material is determined from the measurement of the electro-optical characteristic. 113-. (canceled)14. A method for producing an optoelectronic device , the method comprising:performing an inductive excitation of a current by an inductive component of the optoelectronic device such that the optoelectronic device emits electromagnetic radiation;measuring of at least one electro-optical characteristic of the optoelectronic device; andapplying a converter material to an emission side of the optoelectronic device, wherein a quantity of the converter material is determined from the measurement of the electro-optical characteristic.15. The method according to claim 14 , further comprising applying the converter material to the emission side of the optoelectronic device prior to performing the inductive excitation of the current by the inductive component.16. The method according to claim 14 , wherein the electro-optical characteristic is a color location of the emitted radiation claim 14 , wherein the quantity of the converter material to be applied is selected such that the color location of the emitted radiation of the device has a substantially fixed setpoint value.17. The method according to claim 14 , wherein the optoelectronic device comprises a light-emitting semiconductor body comprising a first segment and a second segment claim 14 , wherein the first segment and the second segment comprise an emission side claim 14 , wherein the first segment and the second segment are electrically interconnected claim 14 , and ...

Method for Producing a Plurality of Semiconductor Chips and Semiconductor Chip

A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth surface of a growth substrate, wherein the growth surface includes sapphire, patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at the bottom of at least some of the openings, applying a semiconductor layer sequence on the mask layer and on the growth surface and singulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip includes lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to the nearest opening. 113-. (canceled)14. A method for producing a plurality of semiconductor chips , the method comprising:applying a mask material on a growth surface of a growth substrate, wherein the growth surface comprises sapphire;patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at a bottom of at least some of the openings;applying a semiconductor layer sequence on the mask layer and on the growth surface; andsingulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip comprises lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to a nearest opening.15. The method according to claim 14 , wherein the semiconductor layer sequence claim 14 , the mask layer and the growth substrate are severed multiple times during singulation.16. The method according to claim 14 , wherein the mask layer is at least partially removed prior to or after the singulation.17. The method according to claim 14 , wherein the growth substrate is removed from the semiconductor layer sequence prior to or after singulation ...

OPTOELECTRONIC COMPONENT

The invention relates to an optoelectronic component () comprising a semiconductor layer sequence () having an active layer (), wherein the active layer () is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component () comprises a first contact structure () and a second structure (), by means of which the semiconductor layer sequence () can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (), wherein an operation-related voltage difference ΔUbet between the contact structures () arises. When the voltage difference is increased, a first arc-over occurs in or on the component () between the two contact structures (). A spark gap () between the contact structures (), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting. The first arc-over occurs at a voltage difference of 2·ΔUbet at the earliest. 1. An optoelectronic component , comprising:a semiconductor layer sequence with an active layer, wherein the active layer is set up to generate or absorb electromagnetic radiation during normal operation,a first contact structure and a second contact structure via which the semiconductor layer sequence is electrically contacted during normal operation, wherein{'sub': 'bet', 'during operation, the contact structures are subjected to a voltage and an operational voltage difference ΔUbetween the contact structures occurs,'}a first electrical flashover is formed in or on the component between the two contact structures when the voltage difference is increased,a spark gap produced between the contact structures during the first flashover runs predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting around the component,{'sub': 'bet', 'the first flashover occurs at the earliest at a voltage difference of 2·ΔU.'}2. An optoelectronic ...

Method of producing a semiconductor body

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

DEVICE INCLUDING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR COMPONENT

A device includes a plurality of optoelectronic semiconductor components and a connection carrier on which the optoelectronic semiconductor components are arranged, wherein the optoelectronic semiconductor components each have a semiconductor body including an active region configured to generate and/or receive radiation; the optoelectronic semiconductor components have a molded body through which a first electrical contact and a second electrical contact to electrically contact the semiconductor bodies are fed; the molded body has a side face delimiting the semiconductor components in a lateral direction; and the connection carrier and the side face of the molded body are covered at least in regions by a radiation-impermeable cover layer. 115-. (canceled)16. A device comprising a plurality of optoelectronic semiconductor components and a connection carrier on which the optoelectronic semiconductor components are arranged , whereinthe optoelectronic semiconductor components each have a semiconductor body comprising an active region configured to generate and/or receive radiation;the optoelectronic semiconductor components have a molded body through which a first electrical contact and a second electrical contact to electrically contact the semiconductor bodies are fed;the molded body has a side face delimiting the semiconductor components in a lateral direction; andthe connection carrier and the side face of the molded body are covered at least in regions by a radiation-impermeable cover layer.17. The device according to claim 16 , wherein the cover layer has a reflectivity of at least 80% for the radiation generated or to be received in the active regions during operation.18. The device according to claim 16 , wherein the side face of the molded body is covered by the cover layer along an entire circumference of the molded body.19. The device according to claim 16 , wherein a radiation conversion element is arranged on the semiconductor bodies claim 16 , the ...

µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

Method for Producing Radiation-Emitting Semiconductor Chips, Radiation-Emitting Semiconductor Chip and Radiation-Emitting Component

In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

Light emitting diode chip

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.

Optoelectronic semiconductor component and method for its production

Es wird ein optoelektronisches Halbleiterbauelement (100) angegeben, umfassend einen Halbleiterkörper (1), der eine Halbleiterschichtenfolge (2) aufweist, einen Träger (10), der einen Kunststoff aufweist und eine erste Durchkontaktierung (11) und eine zweite Durchkontaktierung (12) aufweist, eine p-Kontaktschicht (6) und eine n-Kontaktschicht (8, 8A), welche zumindest bereichsweise zwischen dem Träger (10) und dem Halbleiterkörper (1) angeordnet sind, eine metallische Verstärkungsschicht (14), welche zumindest bereichsweise zwischen der n-Kontaktschicht (8, 8A) und dem Träger (10) angeordnet ist, wobei die metallische Verstärkungsschicht (14) mindestens 5 µm dick ist, und mindestens eine p-Kontaktdurchführung (7), welche zwischen der ersten Durchkontaktierung (11) und der p-Kontaktschicht (6) angeordnet ist, wobei die p-Kontaktdurchführung (7) mindestens 5 µm dick ist und in lateraler Richtung zumindest bereichsweise von der Verstärkungsschicht (14) umgeben ist. Ferner wird ein vorteilhaftes Verfahren zur Herstellung eines derartigen optoelektronischen Halbleiterbauelements (100) angegeben. The invention relates to an optoelectronic semiconductor component (100) comprising a semiconductor body (1) having a semiconductor layer sequence (2), a carrier (10) comprising a plastic and having a first via (11) and a second via (12) , a p-contact layer (6) and an n-contact layer (8, 8A), which are arranged at least partially between the carrier (10) and the semiconductor body (1), a metallic reinforcing layer (14) which at least partially between the n Contact layer (8, 8A) and the carrier (10) is arranged, wherein the metallic reinforcing layer (14) is at least 5 microns thick, and at least one p-contact bushing (7) which between the first via (11) and the p Contact layer (6) is arranged, wherein the p-contact bushing (7) is at least 5 microns thick and in the lateral direction at least partially surrounded by the reinforcing layer (14). Furthermore, an advantageous method ...

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS

In einer Ausführungsform umfasst das optoelektronische Halbleiterbauteil (1) eine Halbleiterschichtenfolge (2) und eine elektrische Durchkontaktierung (3). Die Halbleiterschichtenfolge (2) beinhaltet eine aktive Zone (22) zur Strahlungserzeugung und eine Kontaktschicht (25) zur elektrischen Kontaktierung. Die aktive Zone (22) liegt in einer Ebene (P) senkrecht zu einer Hauptwachstumsrichtung (G) der Halbleiterschichtenfolge (2) und befindet sich zwischen einem ersten Halbleiterbereich (21) und einem zweiten Halbleiterbereich (23). Die Kontaktschicht (25) liegt innerhalb des zweiten Halbleiterbereichs (23). Die Durchkontaktierung (3) reicht durch die Kontaktschicht (25) hindurch und endet bevorzugt innerhalb des zweiten Halbleiterbereichs (23). Eine Kontaktfläche (32) zwischen der Durchkontaktierung (3) und der Kontaktschicht (25) schließt zur Ebene (P) einen Kontaktwinkel (w) von mindestens 20° und höchstens 60° ein. In one embodiment, the optoelectronic semiconductor component (1) comprises a semiconductor layer sequence (2) and an electrical plated-through hole (3). The semiconductor layer sequence (2) contains an active zone (22) for generating radiation and a contact layer (25) for electrical contacting. The active zone (22) lies in a plane (P) perpendicular to a main growth direction (G) of the semiconductor layer sequence (2) and is located between a first semiconductor region (21) and a second semiconductor region (23). The contact layer (25) lies within the second semiconductor region (23). The plated-through hole (3) extends through the contact layer (25) and preferably ends within the second semiconductor region (23). A contact surface (32) between the plated-through hole (3) and the contact layer (25) includes a contact angle (w) of at least 20 ° and at most 60 ° to the plane (P).

Optoelectronic semiconductor body with a reflective layer system

Es wird ein optoelektronischer Halbleiterkörper (1) mit einer aktiven Halbleiterschichtenfolge (10) und einem reflektierenden Schichtsystem (20) angegeben. Das reflektierende Schichtsystem (20) weist eine an die Halbleiterschichtenfolge (10) angrenzende erste strahlungsdurchlässige Schicht (21) und eine Metallschicht (23) an der von der Halbleiterschichtenfolge (10) abgewandten Seite der ersten strahlungsdurchlässigen Schicht (21) auf. Die erste strahlungsdurchlässige Schicht (21) enthält ein erstes dielektrisches Material. Zwischen der ersten strahlungsdurchlässigen Schicht (21) und der Metallschicht (23) ist eine zweite strahlungsdurchlässige Schicht (22) angeordnet, die ein haftverbesserndes Material enthält. Die Metallschicht (23) ist unmittelbar auf das haftverbessernde Material aufgebracht. Das haftverbessernde Material ist von dem ersten dielektrischen Material verschieden und derart ausgewählt, dass die Haftung der Metallschicht (23) im Vergleich zur Haftung auf dem ersten dielektrischen Material verbessert ist. An optoelectronic semiconductor body (1) with an active semiconductor layer sequence (10) and a reflective layer system (20) is specified. The reflective layer system (20) has a first radiation-transmissive layer (21) adjacent to the semiconductor layer sequence (10) and a metal layer (23) on the side of the first radiation-transmissive layer (21) remote from the semiconductor layer sequence (10). The first radiation-transmissive layer (21) contains a first dielectric material. Between the first radiation-transmissive layer (21) and the metal layer (23) is disposed a second radiation-transmissive layer (22) containing an adhesion-promoting material. The metal layer (23) is applied directly to the adhesion-improving material. The adhesion-promoting material is different from the first dielectric material and is selected such that the adhesion of the metal layer (23) is improved compared to adhesion to the first dielectric material.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

In mindestens einer Ausführungsform weist der optoelektronische Halbleiterchip (1) eine Halbleiterschichtenfolge (2) zur Erzeugung einer elektromagnetischen Strahlung auf sowie einen Silberspiegel (3). Der Silberspiegel (3) ist an der Halbleiterschichtenfolge (2) angeordnet. Dem Silber des Silberspiegels (3) ist Sauerstoff beigegeben. Ein Gewichtsanteil des Sauerstoffs an dem Silberspiegel (3) beträgt bevorzugt mindestens 10–5 und ferner bevorzugt höchstens 10%. In at least one embodiment, the optoelectronic semiconductor chip (1) has a semiconductor layer sequence (2) for generating electromagnetic radiation and a silver mirror (3). The silver mirror (3) is arranged on the semiconductor layer sequence (2). The silver of the silver mirror (3) oxygen is added. A weight proportion of the oxygen on the silver mirror (3) is preferably at least 10 -5 and further preferably at most 10%.

Light emitting diode chip

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

Optoelectronic semiconductor component having a first and second metal layer, and method for producing the optoelectronic semiconductor component

The invention relates to an optoelectronic semiconductor component (10) comprising a first semiconductor layer (110) of a first conductivity type, a second semiconductor layer (105) of a second conductivity type, and an active zone (108), wherein the first semiconductor layer (110) and the second semiconductor layer are structured to form a mesa such that parts of the second semiconductor layer (105) are not covered by the first semiconductor layer (110) and a section of the active zone is exposed in the region of a mesa flank. The optoelectronic semiconductor component also comprises a passivation layer (117) which is arranged over parts of the first semiconductor layer (110) and over parts of the second semiconductor layer (105), as well as over the exposed section of the active zone (108). The optoelectronic semiconductor component also contains a first metal layer (115) and a second metal layer (125). The second metal layer (125) covers the passivation layer (117) in the region of the mesa flank. The composition of the first metal layer (115) next to the first semiconductor layer (110) is consistent along a horizontal direction.

Optoelectronic component, method for producing an optoelectronic component and method for operating an optoelectronic component

Es wird ein optoelektronisches Bauelement (1) angegeben, umfassend einen Träger (2), welcher einen Formkörper umfasst, einen lichtemittierenden Halbleiterkörper (3) mit einem ersten Segment (30) und einem zweiten Segment (31). Weiterhin umfasst das optoelektronische Bauelement (1) eine elektrische Leiterbahn (4a), welche auf einer dem Träger (2) zugewandten Seite (3b) des lichtemittierenden Halbleiterkörpers (3) auf dem ersten Segment (30) und auf dem zweiten Segment (31) angeordnet ist, und eine erste elektrische Verbindungsstruktur (5a) und eine zweite elektrische Verbindungsstruktur (5b), welche jeweils das erste Segment (30) und das zweite Segment (31) elektrisch miteinander verbinden und mittels der elektrischen Leiterbahn (4a) elektrisch miteinander verbunden sind, wobei das erste Segment (30) und das zweite Segment (31) antiparallel verschaltet sind, wobei die erste elektrische Verbindungsstruktur (5a), die zweite elektrische Verbindungsstruktur (5b) und die elektrische Leiterbahn (4a) vom Formkörper vollständig bedeckt sind. An optoelectronic component (1) is provided, comprising a carrier (2) which comprises a shaped body, a light-emitting semiconductor body (3) having a first segment (30) and a second segment (31). Furthermore, the optoelectronic component (1) comprises an electrical conductor track (4a) which is arranged on a side (3b) of the light-emitting semiconductor body (3) facing the carrier (2) on the first segment (30) and on the second segment (31) and a first electrical connection structure (5a) and a second electrical connection structure (5b) which electrically connect the first segment (30) and the second segment (31) to each other and are electrically connected to each other by the electrical circuit (4a), wherein the first segment (30) and the second segment (31) are connected in anti-parallel, wherein the first electrical connection structure (5a), the second electrical connection structure (5b) and the electrical conductor track (4a) are ...

Component and method for manufacturing a device

Es wird ein Bauelement (100) mit einem Halbleiterkörper (2), einem Träger (1) und einer in vertikaler Richtung zwischen dem Halbleiterkörper und dem Träger angeordneten Stabilisierungsschicht (3) angegeben, wobei – der Halbleiterkörper eine dem Träger abgewandte erste Halbleiterschicht (21), eine dem Träger zugewandte zweite Halbleiterschicht (22) und eine zwischen der ersten Halbleiterschicht und der zweiten Halbleiterschicht angeordnete aktive Schicht (23) aufweist, – der Träger einen ersten Durchkontakt (41) und einen durch einen Zwischenbereich (40) von dem ersten Durchkontakt lateral beabstandeten zweiten Durchkontakt (42) aufweist, wobei der erste Durchkontakt mit der ersten Halbleiterschicht elektrisch leitend verbunden ist und der zweite Durchkontakt mit der zweiten Halbleiterschicht elektrisch leitend verbunden ist, und – die Stabilisierungsschicht zusammenhängend ausgebildet ist, in Draufsicht Überlappungen mit den Durchkontakten (41, 42) aufweist und den Zwischenbereich lateral überbrückt, wobei die Stabilisierungsschicht von den Durchkontakten sowie von dem Halbleiterkörper elektrisch isoliert ist. Des Weiteren wird ein Verfahren zur Herstellung eines solchen Bauelements angegeben, bei dem der Träger (1) schrittweise am Halbleiterkörper (2) ausgebildet wird. A component (100) with a semiconductor body (2), a carrier (1) and a stabilization layer (3) arranged in the vertical direction between the semiconductor body and the carrier is specified, wherein - the semiconductor body has a first semiconductor layer (21) facing away from the carrier a second semiconductor layer (22) facing the carrier and an active layer (23) disposed between the first semiconductor layer and the second semiconductor layer, the carrier having a first via (41) and an intermediate region (40) laterally from the first via spaced second via (42), wherein the first via is electrically conductively connected to the first semiconductor layer and the second via is electrically ...

METHOD FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS AND DEVICE FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS

Verfahren zum Sortieren von optoelektronischen Halbleiterbauelementen (10), die jeweils einen aktiven Bereich (100) zur Emission oder Detektion von elektromagnetischer Strahlung aufweisen, umfassend die folgenden Schritte:- Einbringen der Halbleiterbauelemente (10) in einen Sortierbereich (2) auf einer vorgegebenen Bahn (3),- Bestrahlung der optoelektronischen Halbleiterbauelemente (10) mit elektromagnetischer Strahlung (50) eines ersten Wellenlängenbereichs zur Erzeugung von Dipolmomenten durch Ladungstrennung in den aktiven Bereichen (100) der optoelektronischen Halbleiterbauelemente (10), und- Ablenkung der optoelektronischen Halbleiterbauelemente (10) von der vorgegebenen Bahn (3) in Abhängigkeit ihres Dipolmoments mittels eines inhomogenen elektromagnetischen Feldes (60). Method for sorting optoelectronic semiconductor components (10), each having an active area (100) for the emission or detection of electromagnetic radiation, comprising the following steps:- introducing the semiconductor components (10) into a sorting area (2) on a predetermined path ( 3),- Irradiation of the optoelectronic semiconductor components (10) with electromagnetic radiation (50) of a first wavelength range to generate dipole moments by charge separation in the active regions (100) of the optoelectronic semiconductor components (10), and- Deflection of the optoelectronic semiconductor components (10) from the specified path (3) as a function of its dipole moment by means of an inhomogeneous electromagnetic field (60).

Method for sorting optoelectronic semiconductor components, and device for sorting optoelectronic semiconductor components

The invention relates to a method for sorting optoelectronic semiconductor components (10). Each of the semiconductor components (10) has an active region (100) for emitting or detecting electromagnetic radiation. The method has the following steps: - introducing the semiconductor components (10) into a sorting region (2) on a specified path (3), - irradiating the optoelectronic semiconductor components (10) with electromagnetic radiation (50) of a first wavelength range in order to generate dipole moments by means of a charge separation in the active regions (100) of the optoelectronic semiconductor components (10), and - deflecting the optoelectronic semiconductor components (10) from the specified path (3) on the basis of the dipole moment of the semiconductor components by means of a non-homogeneous electromagnetic field (60). The invention additionally relates to a device for sorting optoelectronic semiconductor components (10).

Method for singulating a component composite assembly

A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.

METHOD FOR PRODUCING A VARIETY OF RADIATION-EMITTING COMPONENTS, RADIATION-EMITTING COMPONENT, METHOD FOR PRODUCING A CONNECTING BEARING AND CONNECTING SUPPORT

Es wird ein Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Bauelemente (12) mit den folgenden Schritten angegeben:- Bereitstellen eines Verbunds (6) mit einer Vielzahl an Verbindungsträgern (9), wobei- jeder Verbindungsträger (9) eine lichtdurchlässige Matrix (7) aufweist, in der Durchkontaktierungen (8) angeordnet sind, die sich von einer ersten Hauptfläche des Verbindungsträgers (9) zu einer zweiten Hauptfläche des Verbindungsträgers (9) hindurch erstrecken, und- die Verbindungsträger (9) durch Rahmen (4) voneinander beabstandet sind, die jeden Verbindungsträger (9) umlaufen,- Anordnen eines strahlungsemittierenden Halbleiterchips (11) auf zwei Durchkontaktierungen (8), und- Vereinzeln der Bauelemente (12) durch vollständiges oder teilweises Entfernen der Rahmen (4).Außerdem werden ein strahlungsemittierendes Bauelement, ein Verfahren zur Herstellung eines Verbindungsträgers und ein Verbindungsträger angegeben. The invention relates to a method for producing a multiplicity of radiation-emitting components (12), comprising the following steps: providing a composite (6) with a multiplicity of connecting carriers (9), each connecting carrier (9) having a translucent matrix (7), in which vias (8) are arranged which extend through from a first main surface of the connection carrier (9) to a second main surface of the connection carrier (9), and - the connection carriers (9) are spaced apart from one another by frames (4) which each Circulating connection carrier (9), - arranging a radiation-emitting semiconductor chip (11) on two plated-through holes (8), and - separating the components (12) by completely or partially removing the frames (4) a connection carrier and a connection carrier specified.

Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component

The invention relates to a method for producing an optoelectronic semiconductor component, wherein in a method step A), a growth substrate (2) having a semiconductor layer sequence (10) arranged thereon, which is suited for the emission of light, is provided. The semiconductor layer sequence (10) comprises at least one separating trench (3) extending at least partially through the semiconductor layer sequence (10) from a side (10a) of the semiconductor layer sequence (10) that faces away from the growth substrate (2) in the direction of the growth substrate (2). In a method step B), an arranging of a lacquer structure (4) in the separating trench (3) takes place. In a method step C), the arrangement of a potting (6) on the side (10a) of the semiconductor layer sequence (10) that faces away from the growth substrate (2) takes place such that the potting (6) is in lateral contact with at least a part of the lacquer structure (4).

OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Es wird ein optoelektronisches Halbleiterbauelement (16) angegeben umfassend- einen Schichtenstapel (9) umfassend zumindest eine Seitenfläche (9A), eine erste Hauptfläche (9B) und eine zweite Hauptfläche (9C),- ein erstes, an der ersten Hauptfläche (9B) angeordnetes Kontaktmittel (12), das zur elektrischen Kontaktierung eines ersten Halbleiterbereichs (4) des Schichtenstapels (9) vorgesehen ist,- ein zweites, an der zweiten Hauptfläche (9C) angeordnetes Kontaktmittel (17), das zur elektrischen Kontaktierung eines zweiten Halbleiterbereichs (5) des Schichtenstapels (9) vorgesehen und strahlungsdurchlässig ist, und- eine auf dem Schichtenstapel (9) angeordnete, elektrisch leitfähige Randschicht (11), die sich von dem zweiten Kontaktmittel (17) über die Seitenfläche (9A) bis an die erste Hauptfläche (9B) erstreckt, und- eine erste, zwischen der Randschicht (11) und dem Schichtenstapel (9) angeordnete dielektrische Schicht (10), wobei die zweite Hauptfläche (9C) von der ersten dielektrischen Schicht (10) unbedeckt ist.Ferner wird ein Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauelements angegeben. An optoelectronic semiconductor component (16) is specified, comprising - a layer stack (9) comprising at least one side surface (9A), a first main surface (9B) and a second main surface (9C), - a first one arranged on the first main surface (9B). Contact means (12) which is provided for making electrical contact with a first semiconductor region (4) of the layer stack (9), - a second contact means (17) which is arranged on the second main surface (9C) and which is used for making electrical contact with a second semiconductor region (5) of the layer stack (9) and is radiation-transmissive, and- an electrically conductive edge layer (11) arranged on the layer stack (9) and extending from the second contact means (17) via the side surface (9A) to the first main surface (9B ) extends, and- a first, between the edge layer (11) and the layer stack (9) ...

METHOD FOR THE PRODUCTION OF OPTOELECTRONIC CONVERSION SEMICONDUCTOR CHIPS AND CONNECTION OF CONVERSION SEMICONDUCTOR CHIPS

FILAMENT WITH A CARRIER

Die Erfindung betrifft ein Filament (1) mit einem Träger (12), wobei auf dem Träger (12) wenigstens zwei Leuchtdiodenstrukturen (2, 3) mit einer p–n Halbleiterschichtstruktur (6, 7) mit einer aktiven Zone zum Erzeugen elektromagnetischer Strahlung angeordnet sind, wobei eine p-Schicht (8) der ersten Leuchtdiodenstruktur (2) mit einem elektrischen Verbindungskontakt (13) elektrisch leitend verbunden ist, wobei eine n-Schicht (7) der zweiten Leuchtdiodenstruktur (3) mit dem elektrischen Verbindungskontakt (13) elektrisch leitend verbunden ist, wobei der elektrische Verbindungskontakt (13) auf einer ersten Seite (14) des Trägers (12) angeordnet ist, und wobei zwei Versorgungskontakte (10, 17) zum Betreiben des Filaments (1) am Träger (12) vorgesehen sind, wobei der erste Versorgungskontakt mit einer n-Schicht (7) der ersten Leuchtdiodenstruktur (2) elektrisch leitend verbunden ist, und wobei der zweite Versorgungskontakt (17) mit einer p-Schicht (8) der zweiten Leuchtdiodenstruktur (3) elektrisch leitend verbunden ist. Zudem betrifft die Erfindung ein Verfahren zum Herstellen eines Filaments. The invention relates to a filament (1) having a carrier (12), wherein at least two light-emitting diode structures (2, 3) with a p-n semiconductor layer structure (6, 7) with an active zone for generating electromagnetic radiation are arranged on the carrier (12) wherein a p-layer (8) of the first light-emitting diode structure (2) is electrically conductively connected to an electrical connection contact (13), wherein an n-layer (7) of the second light-emitting diode structure (3) to the electrical connection contact (13) electrically is conductively connected, wherein the electrical connection contact (13) on a first side (14) of the carrier (12) is arranged, and wherein two supply contacts (10, 17) are provided for operating the filament (1) on the carrier (12), wherein the first supply contact with an n-layer (7) of the first light-emitting diode structure (2) is electrically ...

OPTOELECTRONIC SEMICONDUCTOR COMPONENT, OPTOELECTRONIC ARRANGEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Method for sorting optoelectronic semiconductor components and device for sorting optoelectronic semiconductor components

A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.

Optoelectronic semiconductor component

An optoelectronic semiconductor component is disclosed, comprising: a semiconductor body (1) having a semiconductor layer sequence (2) with a p-type semiconductor region (3), an n-type semiconductor region (5), and an active layer (4) arranged between the p-type semiconductor region (3) and the n-type semiconductor region (5); a support (10) having a plastic material and a first via (11) and a second via (12); a p-contact layer (7) and an n-contact layer (8), at least some regions of which are arranged between the support (10) and the semiconductor body (1), wherein the p-contact layer (7) connects the first via (11) to the p-type semiconductor region (3) and the n-contact layer (8, 8A) connects the second via (12) to the n-type semiconductor region (5); and an ESD protection element (15) which is arranged between the support (10) and the semiconductor body (1), wherein the ESD protection element (15) is electrically conductively connected to the first via (11) and to the second via (12), and wherein a forward direction of the ESD protection element (15) is anti-parallel to a forward direction of the semiconductor layer sequence (2).

Method for producing a semiconductor body

Es wird ein Verfahren zur Herstellung eines Halbleiterkörpers (3) mit den folgenden Schritten angegeben: – Bereitstellen eines Halbleiterwafers mit mindestens zwei Chipbereichen (1) und mindestens einem Trennbereich (2), der zwischen den Chipbereichen (1) angeordnet ist, wobei der Halbleiterwafer eine Schichtenfolge aufweist, deren äußerste Schicht zumindest innerhalb des Trennbereiches (2) eine transmittierende Schicht (8) aufweist, die für elektromagnetische Strahlung durchlässig ist, – Durchführen zumindest einer der folgenden Maßnahmen: Entfernen der transmittierenden Schicht (8) innerhalb des Trennbereichs (2), Aufbringen einer absorbierenden Schicht (16) innerhalb des Trennbereichs, Erhöhen des Absorptionskoeffizients der transmittierenden Schicht innerhalb des Trennbereichs, und – Trennen der Chipbereiche (1) entlang der Trennbereiche (2) mittels eines Lasers. The invention relates to a method for producing a semiconductor body (3) with the following steps: Providing a semiconductor wafer having at least two chip regions (1) and at least one separation region (2) which is arranged between the chip regions (1), wherein the semiconductor wafer has a layer sequence whose outermost layer has a transmitting layer (at least within the separation region (2)). 8) permeable to electromagnetic radiation, - carry out at least one of the following actions: Removing the transmitting layer (8) within the separation area (2), Applying an absorbent layer (16) within the separation area, Increasing the absorption coefficient of the transmitting layer within the separation region, and - Separating the chip areas (1) along the separation areas (2) by means of a laser.

OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH FIRST AND SECOND CONTACT ELEMENTS AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Ein optoelektronisches Halbleiterbauelement (10) umfasst einen optoelektronischen Halbleiterchip (15). Der optoelektronische Halbleiterchip weist eine erste Halbleiterschicht (100) von einem ersten Leitfähigkeitstyp, eine zweite Halbleiterschicht (110) von einem zweiten Leitfähigkeitstyp, ein erstes Kontaktelement (115), das mit der ersten Halbleiterschicht (100) elektrisch leitend verbunden ist, und ein zweites Kontaktelement (117), das mit der zweiten Halbleiterschicht (110) elektrisch leitend verbunden ist, auf. Die erste Halbleiterschicht (100) und die zweite Halbleiterschicht (110) sind unter Ausbildung eines Schichtstapels übereinander angeordnet. Die erste Halbleiterschicht (100) ist strukturiert, so dass ein Teil der zweiten Halbleiterschicht (110) freiliegt. Das erste Kontaktelement (115) ist über der ersten Halbleiterschicht (100) angeordnet, und das zweite Kontaktelement (117) ist über der ersten Halbleiterschicht (100) angeordnet. Teile des ersten Kontaktelements (115) sind auf derselben vertikalen Höhe angeordnet wie Teile des zweiten Kontaktelements (117) innerhalb eines Bereichs, in dem das zweite Kontaktelement (117) mit der ersten Halbleiterschicht (100) überlappt. An optoelectronic semiconductor component (10) comprises an optoelectronic semiconductor chip (15). The optoelectronic semiconductor chip has a first semiconductor layer (100) of a first conductivity type, a second semiconductor layer (110) of a second conductivity type, a first contact element (115) which is electrically conductively connected to the first semiconductor layer (100), and a second contact element (117), which is electrically conductively connected to the second semiconductor layer (110). The first semiconductor layer (100) and the second semiconductor layer (110) are arranged one above the other to form a layer stack. The first semiconductor layer (100) is structured so that part of the second semiconductor layer (110) is exposed. The first contact element (115) is ...

Component and method for the production of components

Es wird ein Bauelement (100) mit einem Träger (1) und einem auf dem Träger angeordneten Halbleiterkörper (2) angegeben, bei dem der Träger eine Metallschicht (4) und einen Formkörper (5) aus einem Kunststoff umfasst, wobei die Metallschicht einen ersten Teilbereich (41) und einen zweiten Teilbereich (42) enthält, welche verschiedenen elektrischen Polaritäten des Bauelements zugehörig und so zur elektrischen Kontaktierung des Halbleiterkörpers eingerichtet sind. Der Träger weist eine Seitenfläche (10) auf, die als Montagefläche des Bauelements ausgestaltet ist, wobei zumindest einer der Teilbereiche (41, 42) über die Seitenfläche elektrisch kontaktierbar ist und Vereinzelungsspuren aufweist. Des Weiteren wird ein Verfahren zur Herstellung einer Mehrzahl solcher Bauelemente angegeben. The invention relates to a component (100) having a carrier (1) and a semiconductor body (2) arranged on the carrier, in which the carrier comprises a metal layer (4) and a molded body (5) made of a plastic, wherein the metal layer has a first Partial region (41) and a second portion (42) includes, which are associated with different electrical polarities of the component and so set up for electrical contacting of the semiconductor body. The carrier has a side face (10), which is designed as a mounting surface of the component, wherein at least one of the partial areas (41, 42) is electrically contactable via the side face and has singulation tracks. Furthermore, a method for producing a plurality of such components is specified.

Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component

An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.

Component composite, method for detaching components from a component composite and method for producing a component composite

Es wird ein Bauelementverbund (1) mit einer Mehrzahl von Bauelementen (2) und einem Träger (5) angegeben, wobei die Bauelemente mittels einer Verbindungsschicht (4) an dem Träger befestigt sind und die Verbindungsschicht für jedes Bauelement mindestens eine Auflagestruktur (41) bildet, an der die Verbindungsschicht an das Bauelement angrenzt. Bereichsweise ist zwischen den Bauelementen und der Verbindungsschicht eine Opferschicht (3) angeordnet. Ein Teil der Bauelemente ist einer ersten Gruppe (2A) und ein weiterer Teil der Bauelemente einer zweiten Gruppe (2B) zugeordnet, wobei die Bauelemente der ersten Gruppe von den Bauelementen der zweiten Gruppe hinsichtlich einer Belegung mit der Opferschicht verschieden sind.Weiterhin werden ein Verfahren zum Ablösen von Bauelementen aus einem Bauelementverbund und ein Verfahren zur Herstellung eines Bauelementverbunds angegeben. A component composite (1) with a plurality of components (2) and a carrier (5) is specified, the components being attached to the carrier by means of a connecting layer (4) and the connecting layer forming at least one support structure (41) for each component at which the connecting layer adjoins the component. A sacrificial layer (3) is arranged in some areas between the components and the connecting layer. A part of the components is assigned to a first group (2A) and a further part of the components is assigned to a second group (2B), the components of the first group being different from the components of the second group with regard to an occupation with the sacrificial layer. Furthermore, a method for detaching components from a component assembly and a method for producing a component assembly.

OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP

Es wird ein optoelektronischer Halbleiterchip (20) angegeben mit: - einem x-dotierten Bereich (21), - einem y-dotierten Bereich (22), - einem aktiven Bereich (23), welcher zwischen dem x-dotierten Bereich (21) und dem y-dotierten Bereich (22) angeordnet ist, und - einem x-Kontaktbereich (24), wobei - der x-Kontaktbereich (24) an der dem aktiven Bereich (23) abgewandten Seite des x-dotierten Bereichs (21) angeordnet ist, - der x-Kontaktbereich (24) mindestens einen ersten Bereich (25) und mindestens einen zweiten Bereich (26) aufweist, und - der x-Kontaktbereich (24) dazu ausgelegt ist, dass im Betrieb des optoelektronischen Halbleiterchips (20) mehr Ladungsträger über den zweiten Bereich (26) als über den ersten Bereich (25) in den x-dotierten Bereich (21) injiziert werden. Außerdem wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterchips (20) angegeben. An optoelectronic semiconductor chip (20) is specified with: - an x-doped region (21), - a y-doped region (22), - An active region (23), which is arranged between the x-doped region (21) and the y-doped region (22), and - An x contact area (24), wherein the x-contact region (24) is arranged on the side of the x-doped region (21) facing away from the active region (23), - The x-contact area (24) has at least a first area (25) and at least a second area (26), and - The x-contact area (24) is designed so that, during operation of the optoelectronic semiconductor chip (20), more charge carriers are injected into the x-doped area (21) via the second area (26) than via the first area (25). A method for producing an optoelectronic semiconductor chip (20) is also specified.

Optoelectronic semiconductor chip

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

Radiation-emitting semiconductor chip, method for producing a plurality of radiation-emitting semiconductor chips, radiation-emitting component and method for producing a radiation-emitting component

The invention relates to a radiation-emitting semiconductor chip (10) with the following features: a semiconductor layer sequence (2) with an active layer (4) which is suitable for generating electromagnetic radiation; a substrate (11) on which the semiconductor layer sequence (2) is arranged, and which is transparent for the electromagnetic radiation generated in the active layer (4); and a reflective layer (9) which is arranged on a main surface area of the substrate (11), which is facing away from the semiconductor layer sequence (2), wherein the reflective layer (9) is made of a resin in which reflective particles are embedded. The invention also relates to a method for producing a plurality of radiation-emitting semiconductor chips (10), a radiation-emitting component and a method for producing a radiation-emitting component.

Optoelectronic semiconductor chip and method for operating an optoelectronic semiconductor chip

In at least one embodiment of the optoelectronic semiconductor chip (1), the latter comprises an emission side (6), a mounting side (7) lying opposite the emission side (6), and a semiconductor body (2). The semiconductor body (2) comprises a first semiconductor layer (3), a second semiconductor layer (4) and an active zone (5) arranged between the first semiconductor layer (3) and the second semiconductor layer (4). The semiconductor body (2) further comprises at least two emission regions (21, 22) which, in a view directed on the emission side (6), are arranged next to one another. A first emission region (21) has a first proportion (51) of the active zone (5) and a second emission region (52) has a second proportion (52) of the active zone (5). The emission regions (21, 22) are monolithically integrated in the semiconductor body. In a cross-section along a main extension plane of the active zone (5), the first proportion (51) of the active zone (5) has a surface content which is at least twice as large as that of the second proportion (52) of the active zone (5).

Optoelectronic semiconductor chip

According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.

Led module, led display module and method for producing same

The invention relates to a method for producing modules having one or more optoelectronic components, comprising the steps of: -producing at least one layer stack providing a base module on a carrier having a first layer, an active layer applied thereto and a second layer formed thereon; -exposing a surface region of the first layer that faces away from the carrier; -forming a first contact on a surface region of the second layer that faces away from the carrier; -forming a second contact on the surface region of the first layer that faces away from the carrier.

Optoelectronic component and a method for producing an optoelectronic component

A component (100) is specified which comprises a carrier (1) with an electrically insulating moulded body (5), a semiconductor body (2) and a multilayer structure (3), wherein the moulded body (5) laterally encloses the semiconductor body (2) at least regionally. The multilayer structure (3) is arranged between the semiconductor body (2) and the moulded body (5) at least regionally in a lateral direction, wherein the multilayer structure comprises at least one metallic layer (30) and a non-metallic boundary layer (32), wherein – the boundary layer (32) is arranged between the semiconductor body (2) and the metallic layer (30) in the lateral direction, adjoins the semiconductor body (2) at least regionally, laterally covers the active layer (23) and has a lower refractive index in comparison with the semiconductor body (2), and – the metallic layer (30) is configured to prevent the electromagnetic radiation which is generated during the operation of the component and passes through the boundary layer from impinging on the moulded body (5). Furthermore, a method for producing one or a plurality of such components is specified.

OPTOELECTRONIC SEMICONDUCTOR DEVICE WITH A SUPPORT ELEMENT AND AN ELECTRICAL CONTACT ELEMENT, OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR DEVICE

Eine optoelektronische Halbleitervorrichtung (10) umfasst ein Trägerelement (100) mit einer ersten Hauptoberfläche (110), einen optoelektronischen Halbleiterchip (150), der über dem Trägerelement (100) und angrenzend an die erste Hauptoberfläche (110) angeordnet ist und ein elektrisches Kontaktelement (161) zum Kontaktieren des optoelektronischen Halbleiterchips (150). Dabei ist das elektrische Kontaktelement (161) in einer in der ersten Hauptoberfläche (110) des Trägerelements (100) ausgebildeten Öffnung (162) angeordnet. An optoelectronic semiconductor device (10) comprises a carrier element (100) with a first main surface (110), an optoelectronic semiconductor chip (150) which is arranged above the carrier element (100) and adjacent to the first main surface (110) and an electrical contact element ( 161) for contacting the optoelectronic semiconductor chip (150). The electrical contact element (161) is arranged in an opening (162) formed in the first main surface (110) of the carrier element (100).

Light-emitting diode chip

The invention relates to a light-emitting diode chip (1), comprising a semiconductor layer sequence (2), which has an active layer (3) suitable for producing electromagnetic radiation (13), wherein the light-emitting diode chip (1) has a radiation outlet surface (4) on a front side. The light-emitting diode chip (1) has a mirror layer (5) at least in some areas on a rear side opposite the radiation outlet surface (4). The mirror layer contains silver. A protective layer (6) having a transparent conductive oxide is arranged on the mirror layer (5).

Optoelectronic semiconductor component and production method

An optoelectronic semiconductor component includes a layer stack, a first and second contact means, an electrically conductive edge layer, and a first dielectric layer. The layer stack includes a side surface and a first and a second main surface. The first and second contact means may be arranged at the first and second main surfaces, respectively. Said contact means may electrically contact a first and second semiconductor region of the layer stack, respectively. The second contact means may be radiation-transmissive. The electrically conductive edge layer may be arranged on the layer stack and extend from the second contact means over the side surface as far as the first main surface. The first dielectric layer may be arranged between the edge layer and the layer stack. The second main surface may not be covered by the first dielectric layer.

Optoelectronic semiconductor component comprising a first and second contact element, and method for producing the optoelectronic semiconductor component

An optoelectronic semiconductor element may include an optoelectronic semiconductor chip. The optoelectronic semiconductor chip may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element connected to the first semiconductor layer in an electrically conductive manner, and a second contact element connected to the second semiconductor layer in an electrically conductive manner. The first semiconductor layer and the second semiconductor layer are arranged one above the other to form a layer stack. The first semiconductor layer to where the second semiconductor layer is exposed. The first contact element is arranged over the first semiconductor layer, and the second contact element is arranged over the first semiconductor layer.

Reflektierendes Kontaktschichtsystem für ein optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Radiation-emitting semiconductor chip and a method for producing a radiation-emitting semiconductor chip

A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.

Bauelement zur darstellung eines piktogramms und verfahren zur herstellung eines bauelements

Es wird ein Bauelement (100) mit einem Träger (1), einem Halbleiterkörper (2) und einer dazwischen liegenden Spiegelschicht (3) angegeben, bei dem der Halbleiterkörper eine aktive Schicht (23) aufweist, die im Betrieb des Bauelements zur Erzeugung vom Licht eingerichtet ist. Das Bauelement weist eine Hauptfläche (101) auf, die im Betrieb des Bauelements leuchtet, wobei leuchtende Bereiche der Hauptfläche visuell erfassbare Information in Form eines Piktogramms (P) wiedergeben, wobei das Piktogramm in Draufsicht auf die Hauptfläche eine Kontur aufweist, die zumindest teilweise durch eine Kontur der Spiegelschicht definiert ist, und wobei das Bauelement in Draufsicht auf die Hauptfläche einen Umriss aufweist, der sich von der Kontur des Piktogramms unterscheidet. Des Weiteren wird ein Verfahren angegeben, das zur Herstellung eines solchen Bauelements geeignet ist.

Component for displaying a pictogram and method of producing a component

A component includes a carrier, a semiconductor body and a mirror layer located therebetween, wherein the semiconductor body includes an active layer configured to generate light during operation of the component, the component has a main surface that illuminates during operation, wherein luminous areas of the main surface represent visually detectable information as a pictogram, in a plan view of the main surface, the pictogram has a contour at least partially defined by a contour of the mirror layer, and in a plan view of the main surface, the component has an outline different from the contour of the pictogram.

u-LED, u-LED DEVICE, DISPLAY AND METHOD FOR THE SAME

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.