Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 2. Отображено 2.
14-11-2006 дата публикации

Low profile, chip-scale package and method of fabrication

Номер: US0007135781B2
Автор: Navinchandra Kalidas, Jeremias P. Libres, Michael P. Pierce, KALIDAS NAVINCHANDRA, LIBRES JEREMIAS P, PIERCE MICHAEL P, LIBRES JEREMIAS P., PIERCE MICHAEL P.
Принадлежит: Texas Instruments Incorporated, TEXAS INSTRUMENTS INC, TEXAS INSTRUMENTS INCORPORATED

Disclosed is a semiconductor device that includes an electrically insulating, sheet-like substrate ( 301 ) with first and second surfaces ( 301 a , 301 b), at least one opening ( 310 ), and a certain thickness ( 302 ). On the first surface are a plurality of electrically conductive routing strips and a plurality of contact pads ( 330 ); at least one of the contact pads is electrically connected with at least one of the routing strips, and may have a solder body ( 901 ) attached. A semiconductor chip ( 102 ) is positioned in the opening while leaving a gap ( 311 ) to the substrate; the chip has an active surface ( 102 a) including at least one bond pad ( 103 ), and a passive surface ( 102 b) substantially coplanar with the second substrate surface ( 301 b). Substrate thickness and chip thickness may be substantially equal. Bonding elements ( 501 ) bridge the gap to connect electrically bond pad and routing strip. Encapsulation material ( 701 ) protects the active chip surface and the bonding ...

Подробнее
Номер записи: 1
16-02-2006 дата публикации

Low profile, chip-scale package and method of fabrication

Номер: US2006033219A1
Автор: KALIDAS NAVINCHANDRA, LIBRES JEREMIAS P, PIERCE MICHAEL P, LIBRES JEREMIAS P., PIERCE MICHAEL P.
Принадлежит:

A semiconductor device comprising an electrically insulating, sheet-like substrate ( 301 ) with first and second surfaces ( 301 a , 301 b), at least one opening ( 310 ), and a certain thickness ( 302 ). On the first surface are a plurality of electrically conductive routing strips and a plurality of contact pads ( 330 ); at least one of the contact pads is electrically connected with at least one of the routing strips, and may have a solder body ( 901 ) attached. A semiconductor chip ( 102 ) is positioned in the opening while leaving a cap ( 311 ) to the substrate; the chip has an active surface ( 102 a) including at least one bond pad ( 103 ), and a passive surface ( 102 b) substantially coplanar with the second substrate surface ( 301 b). Substrate thickness and chip thickness may be substantially equal. Bonding elements ( 501 ) bridge the gap to connect electrically bond pad and routing strip. Encapsulation material ( 701 ) protects the active chip surface and the bonding elements, and ...

Подробнее
Номер записи: 2