17-03-2022 дата публикации
Номер: US20220085163A1
A semiconductor structure includes a substrate, a channel layer, a barrier layer, a source structure, a drain structure, a doped compound semiconductor layer, a dielectric layer, and a gate structure. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The source structure and the drain structure are disposed on opposite sides of the barrier layer. The doped compound semiconductor layer is disposed on the barrier layer. The doped compound semiconductor layer has a first side adjacent to the source structure and a second side adjacent to the drain structure. The doped compound semiconductor layer has at least one opening exposing at least a portion of the barrier layer. The dielectric layer is disposed on the doped compound semiconductor layer and the barrier layer. The gate structure is disposed on the doped compound semiconductor layer. 1. A semiconductor structure , comprising:a substrate;a channel layer on the substrate;a barrier layer on the channel layer;{'claim-text': 'and a first direction from the source structure to the drain structure;', '#text': 'a source structure and a drain structure on opposite sides of the barrier layer,'}a doped compound semiconductor layer on the barrier layer, wherein the doped compound semiconductor layer has a first side adjacent to the source structure, a second side adjacent to the drain structure, and at least one opening exposing a portion of the barrier layer;a dielectric layer on the doped compound semiconductor layer and the barrier layer; anda gate structure on the doped compound semiconductor layer.2. The semiconductor structure as claimed in claim 1 , wherein a width of the at least one opening is between ⅓ and ⅔ of a distance between the first side and the second side of the doped compound semiconductor layer.3. The semiconductor structure as claimed in claim 1 , wherein the at least one opening comprises a plurality of openings claim 1 , and a sum of widths of the ...
Подробнее