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Применить Всего найдено 3. Отображено 3.
06-01-2022 дата публикации

Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Номер: US20220005817A1
Принадлежит: MICRON TECHNOLOGY, INC.

A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. A channel-material string is in individual channel openings in the vertically-alternating first tiers and second tiers. A conductor-material contact is in the individual channel openings directly against the channel material of individual of the channel-material strings. The conductor-material contacts are vertically recessed in the individual channel openings. A conductive via is formed in the individual channel openings directly against the vertically-recessed conductor-material contact in that individual channel opening. Other aspects, including structure independent of method, are disclosed. 1. A method used in forming a memory array comprising strings of memory cells , comprising:forming a stack comprising vertically-alternating first tiers and second tiers, a channel-material string being in individual channel openings in the vertically-alternating first tiers and second tiers, a conductor-material contact being in the individual channel openings directly against the channel material of individual of the channel-material strings;vertically recessing the conductor-material contacts in the individual channel openings; andforming a conductive via in the individual channel openings directly against the vertically-recessed conductor-material contact in that individual channel opening.2. The method of wherein an uppermost of the vertically-alternating first tiers and second tiers of the stack is a second tier at start of the vertical recessing claim 1 , the conductor-material contacts in the individual channel openings individually having a top that is above an uppermost of the first tiers after the vertical recessing.3. The method of wherein the uppermost second tier is thicker than the second tier immediately-there-below.4. The method of comprising vertically recessing the individual channel-material ...

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30-01-2024 дата публикации

Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

Номер: US11889683B2
Принадлежит: Micron Technology Inc

A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. A channel-material string is in individual channel openings in the vertically-alternating first tiers and second tiers. A conductor-material contact is in the individual channel openings directly against the channel material of individual of the channel-material strings. The conductor-material contacts are vertically recessed in the individual channel openings. A conductive via is formed in the individual channel openings directly against the vertically-recessed conductor-material contact in that individual channel opening. Other aspects, including structure independent of method, are disclosed.

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25-04-2024 дата публикации

Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

Номер: US20240138145A1
Принадлежит: Micron Technology Inc

A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. A channel-material string is in individual channel openings in the vertically-alternating first tiers and second tiers. A conductor-material contact is in the individual channel openings directly against the channel material of individual of the channel-material strings. The conductor-material contacts are vertically recessed in the individual channel openings. A conductive via is formed in the individual channel openings directly against the vertically-recessed conductor-material contact in that individual channel opening. Other aspects, including structure independent of method, are disclosed.

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