07-02-2013 дата публикации
Номер: US20130032767A1
Автор:
Bertoni Giovanni,
Brescia Rosaria,
Cingolani Roberto,
Deka Sasanka,
Dorfs Dirk,
Genovese Alessandro,
Krahne Roman,
Manna Liberato,
Marras Sergio,
Miszta Karol,
Zhang Yang
This invention relates to the controlled growth of uniform octapod-shaped colloidal nanocrystals and use thereof. These octapod-shaped nanocrystals can be applied in many fields of technology. This represents the first approach reported so far for the predictable and controlled fabrication of octapod-shaped nanocrystals. The synthesis approach is applicable to a broad range of materials, such as group II-VI semiconductor nanocrystals but is not limited to these materials. Using several cation exchange and oxidation procedures, we also demonstrate in this application that extremely uniform octapod-shaped nanocrystals of other materials can be synthesized, including various semiconductors, metals and insulators. 2. The process according to claim 1 , wherein the nanocrystal seeds comprise a material selected from:{'sub': 2', '2-x', '2-x', '1-y', 'y', '2', '2.86', '2', '2', '2', '2', '2', '2', '3', '4', '9', '8', '4', '2', '2', '2', '1-y', 'y', '1-y', 'y', '1-x', 'x', '2', '3', '2', '3', '4', '2', '4', '4', '8', '1.33', '2', 'x', '1-x', 'x', '1-x', '0.4', '3.6', '4', 'x', '1-x', '2', '2', '0.2', '2.56', '4', '3, 'A group IV semiconductor, a group III-V semiconductor, a IV-VI semiconductor, a II-VI semiconductor, a single-element material, a multi-metallic material, an oxide of one or more elements, or one material not comprised in the above groups and being selected from CuSe, CuSe, CuSeS, CuS, CuTe, AgSe, AgSe, AgS, AgTe, CoSe, CoSe, CoS, CoTe, CoSe, CoS, ZnSO, SeS, MnSe, MnSe, MnS, MnSe, MnTe, MnSSe, MnSeTe, SiC (3C), SiGe, CuInGaSe, ZnAs, LiNbO, LaCuO, GaSe, GaSe, MnInAS, CdMnTe, MnPbTe, CuInGaSe, CuInSe, AgGaS, YF.'}3. The process according to claim 2 , wherein the nanocrystal seeds consist of CdSe in the cubic sphalerite phase having octahedral claim 2 , cuboctahedral or truncated octahedral shape.4. The process according to claim 1 , wherein the growth precursors for the pods are chemical species generating one of the following material: a group IV semiconductor ...
Подробнее