01-10-2014 дата публикации
Номер: CN104076854A
Принадлежит:
The invention relates to the technical field of electronic circuit engineering, and particularly relates to a capless LDO (Low Dropout Regulator). The capless LDO comprises a PMOS (P-channel Metal Oxide Semiconductor) pipe MP (Melting Point), a capacitor C2, a resistor R2, a buffer, an error amplifier and a dynamic transconductance intensifier circuit, wherein the in-phase input end of the buffer is connected with an external reference voltage Vref, and the inverted input end of the buffer is connected with the output end of the buffer connected with the inverted input end of the error amplifier; the in-phase input end of the error amplifier is connected with the output end of the LDO, and the output end of the error amplifier is connected with the output end of the dynamic transconductance intensifier circuit; the first bias end VB1 of the dynamic transconductance intensifier circuit is connected with the first bias end of the error amplifier, and the second bias end VB2 of the dynamic ...
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