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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 8. Отображено 7.
04-01-2018 дата публикации

Waferless clean in dielectric etch process

Номер: US20180005804A1
Автор: Chander Radhakrishnan, David Carman, Shijian Li
Принадлежит: Lam Research Corp

A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from the plasma process chamber and removing the protective layer from the top surface of the electrostatic chuck. A capacitive coupled plasma system including a waferless cleaning recipe is also described.

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Номер записи: 1
26-08-2021 дата публикации

METHOD AND APPARATUS FOR PROCESSING WAFERS

Номер: US20210265136A1
Автор: Li Ming, Radhakrishnan Chander, TONG Benson Quyen
Принадлежит:

An apparatus for providing plasma processing is provided. A plasma processing chamber is provided. A first turbopump with an inlet is in fluid connection with the plasma processing chamber and an exhaust. A gas source provides gas to the plasma processing chamber. At least one gas line is in fluid connection between the gas source and the plasma processing chamber. At least one bleed line is in fluid connection with the at least one gas line. At least one gas line valve is on the at least one gas line located between, where the at least one bleed line is connected to the at least one gas line and the plasma processing chamber. At least one bypass valve is on the at least one bleed line. 1. An apparatus for providing a plasma processing of a substrate , comprising:plasma processing chamber;a first turbopump with an inlet in fluid connection with the plasma processing chamber and an exhaust;a gas source for providing gas to the plasma processing chamber;at least one gas line in fluid connection between the gas source and the plasma processing chamber;at least one bleed line in fluid connection with the at least one gas line;at least one gas line valve on the at least one gas line located between where the at least one bleed line is connected to the at least one gas line and the plasma processing chamber;at least one bypass valve on the at least one bleed line;a dry pump with an inlet in fluid connection to the exhaust of the first turbopump, wherein the at least one bleed line is in fluid connection with the dry pump; andat least one pump out valve connected between the at least one bleed line and the dry pump.2. The apparatus claim 1 , as recited in claim 1 , wherein the at least one bleed line is in fluid connection to the first turbopump through the plasma processing chamber.3. The apparatus claim 2 , as recited in claim 2 , wherein the plasma processing chamber includes a plasma zone; wherein gas from the at least one gas line is provided to the plasma zone; and ...

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Номер записи: 2
10-09-2015 дата публикации

WAFERLESS CLEAN IN DIELECTRIC ETCH PROCESS

Номер: US20150255259A1
Автор: Carman David, Li Shijian, Radhakrishnan Chander
Принадлежит: LAM RESEARCH CORPORATION

A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from the plasma process chamber and removing the protective layer from the top surface of the electrostatic chuck. A capacitive coupled plasma system including a waferless cleaning recipe is also described. 1. A waferless cleaning method for a capacitive coupled plasma system comprising:forming a protective layer on a top surface of an electrostatic chuck;volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber;removing volatilized etch byproducts from the plasma process chamber; andremoving the protective layer from the top surface of the electrostatic chuck.2. The method of claim 1 , wherein forming the protective layer on the top surface of the electrostatic chuck includes:providing a process gas into the plasma process chamber; andforming a plasma with the process gas.3. The method of claim 2 , further comprising maintaining the electrostatic chuck at a temperature less than the edge ring including maintaining the edge ring at between about 20 and about 200 degrees C. hotter than the electrostatic chuck.4. The method of claim 2 , further comprising maintaining the electrostatic chuck at the temperature less than the edge ring including maintaining the electrostatic chuck at a temperature of between about −40 to about 150 degrees C.5. The method of claim 2 , wherein volatilizing etch byproducts deposited on the one or more inner surfaces of the plasma process chamber including forming volatile compounds of the etch byproducts with the process gas.6. The method of claim 1 , wherein forming the protective layer on the top surface of the electrostatic chuck includes:providing a first process gas into the plasma ...

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Номер записи: 3
13-02-1996 дата публикации

Wrist arm exerciser

Номер: US5490817A
Автор: Maxwell Stander, Radhakrishnan Chander
Принадлежит: Individual

A portable, compact exerciser comprising a semi-rigid torsion member with a pair of gripping surfaces at each end. The end faces of the gripping surfaces are designed to receive detachable handles orthogonally to the longitudinal axis of the torsion member. The torsion member comprising thin walled sections running along the longitudinal axis to offer resistance to any rotational force applied about the longitudinal axis of the torsion member. In one mode of operation, the user can primarily exercise the wrists by rotating the torsion member by rotating the gripping surfaces in a direction relative to each other. In another mode of operation, by moving the detachable handles attached to the gripping surfaces back and forth relative to each other in a plane orthogonal to the longitudinal axis of the torsion member, the user can exercise forearms and other muscle groups. The torsional resistance of the torsion member can be conveniently increased by using attachments that can be clipped on to the thin walled sections. Due to its simple construction, the exerciser can be easily manufactured at a low cost.

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Номер записи: 4
02-01-2020 дата публикации

Method and apparatus for processing wafers

Номер: WO2020005491A1
Автор: Benson Quyen TONG, Chander Radhakrishnan, Ming Li
Принадлежит: LAM RESEARCH CORPORATION

An apparatus for providing plasma processing is provided. A plasma processing chamber is provided. A first turbopump with an inlet is in fluid connection with the plasma processing chamber and an exhaust. A gas source provides gas to the plasma processing chamber. At least one gas line is in fluid connection between the gas source and the plasma processing chamber. At least one bleed line is in fluid connection with the at least one gas line. At least one gas line valve is on the at least one gas line located between, where the at least one bleed line is connected to the at least one gas line and the plasma processing chamber. At least one bypass valve is on the at least one bleed line.

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Номер записи: 5
16-12-2015 дата публикации

介電蝕刻程序中之無晶圓清潔

Номер: TW201546932A
Автор: Chander Radhakrishnan, David Carman, Shijian Li
Принадлежит: Lam Res Corp

用於電容耦合電漿系統的無晶圓清潔方法之系統及方法。該方法包括於一靜電卡盤的一頂部表面上形成一保護層、使沉積在一電漿處理腔室的一或更多內表面上的蝕刻副產物揮發、將揮發的蝕刻副產物從該電漿處理腔室移除、及將該保護層從該靜電卡盤的該頂部表面上移除。亦描述了包括一無晶圓清潔配方之電容耦合電漿系統。

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Номер записи: 6
21-11-2017 дата публикации

Waferless clean in dielectric etch process

Номер: US09824865B2
Автор: Chander Radhakrishnan, David Carman, Shijian Li
Принадлежит: Lam Research Corp

A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from the plasma process chamber and removing the protective layer from the top surface of the electrostatic chuck. A capacitive coupled plasma system including a waferless cleaning recipe is also described.

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Номер записи: 7