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Применить Всего найдено 5. Отображено 5.
27-06-2017 дата публикации

Ultra-long silicon nanostructures, and methods of forming and transferring the same

Номер: US0009691849B2
Автор: Jeffrey M. Weisse, John P. Reifenberg, Lindsay M. Miller, Matthew L. Scullin, WEISSE JEFFREY M, REIFENBERG JOHN P, MILLER LINDSAY M, SCULLIN MATTHEW L, Weisse Jeffrey M., Reifenberg John P., Miller Lindsay M., Scullin Matthew L.
Принадлежит: Alphabet Energy, Inc., ALPHABET ENERGY INC, ALPHABET ENERGY, INC.

Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.

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Номер записи: 1
21-11-2013 дата публикации

Multilayer-Stacked Phase Change Memory Cell

Номер: US20130306929A1
Автор: Asheghi Mehdi, Goodson Kenneth E., KIM Sangbum, Lee Jaeho, Reifenberg John P., Wong H.S. Philip
Принадлежит:

A multilayer-stacked phase change memory (PCM) device is provided that includes a substrate that is electrically insulative and thermally conductive, a number (n) of PCM layers deposited on the substrate, where each PCM layer is thicker than a previous PCM layer, a number (n−1) layers of passivation layer deposited between the PCM layers, where the (n) PCM layers, and the (n−1) passivation layers form a stacked multi-layer PCM on the substrate, a first electrode deposited on a first side of the multi-layer PCM stack, and a second electrode deposited on a second side of the multi-layer PCM stack, where the first side is opposite the second side, where charge transport is decoupled by stacking the PCM layers with the pasivation layers. 1. A multilayer-stacked phase change memory (PCM) device , comprising:a. a substrate, wherein said substrate is electrically insulative and thermally conductive;b. a number (n) of PCM layers deposited on said substrate, wherein each said PCM layer is thicker than a previous said PCM layer;c. a number (n−1) layers of passivation layer deposited between said PCM layers, wherein said (n) PCM layers, and said (n−1) passivation layers form a stacked multi-layer PCM on said substrate;d. a first electrode deposited on a first side of said multi-layer PCM stack; ande. a second electrode deposited on a second side of said multi-layer PCM stack, wherein said first side is opposite said second side, wherein charge transport is decoupled by stacking said PCM layers with said pasivation layers.2. The multilayer-stacked phase change memory (PCM) device of claim 1 , wherein said substrate is selected from the group consisting of silicon claim 1 , silicon carbide GaAs claim 1 , and GaN.3. The multilayer-stacked phase change memory (PCM) device of claim 1 , wherein (n) is in a range of 3 to 7.4. The multilayer-stacked phase change memory (PCM) device of claim 1 , wherein said PCM layers comprise chalcogenide semiconductors that provide threshold ...

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Номер записи: 2
04-02-2016 дата публикации

ULTRA-LONG SILICON NANOSTRUCTURES, AND METHODS OF FORMING AND TRANSFERRING THE SAME

Номер: US20160035829A1
Автор: Miller Lindsay M., Reifenberg John P., Scullin Matthew L., Weisse Jeffrey M.
Принадлежит:

Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided. 1. A plurality of silicon nanostructures , each of the silicon nanostructures including a length and a cross-section , the cross-section being substantially constant along the length , the length being at least 100 microns.2. The nanostructures of claim 1 , the length being at least 250 microns.3. The nanostructures of claim 1 , the length being at least 500 microns.4. The nanostructures of claim 1 , the cross-section being substantially rectangular.5. The nanostructures of claim 4 , wherein the substantially rectangular cross-section is elongated claim 4 , and wherein the nanostructures include nanoribbons.6. The nanostructures of claim 1 , the cross-section being substantially curved.7. The nanostructures of claim 6 , wherein the cross-section is substantially circular.8. The nanostructures of claim 7 , wherein the cross-section is substantially annular.9. The nanostructures of claim 1 , wherein the cross-section varies by less than 50% along the length.10. The nanostructures of claim 1 , wherein the cross-section varies by less than 30% along the length. ...

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Номер записи: 3
30-06-2016 дата публикации

ELECTRICAL AND THERMAL CONTACTS FOR BULK TETRAHEDRITE MATERIAL, AND METHODS OF MAKING THE SAME

Номер: US20160190420A1
Автор: Aguirre Mario, Chase Jordan, Crane Douglas, Lorimer Adam, Miller Lindsay, Reifenberg John P., Scullin Matthew L.
Принадлежит:

Under one aspect, a structure includes a tetrahedrite substrate; a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; and a second contact metal layer disposed over the first contact metal layer. A thermoelectric device can include such a structure. Under another aspect, a method includes providing a tetrahedrite substrate; disposing a first contact metal layer over and in direct contact with the tetrahedrite substrate; and disposing a second contact metal layer over the first contact metal layer. A method of making a thermoelectric device can include such a method. 1. A structure , including:a tetrahedrite substrate;a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; anda second contact metal layer disposed over the first contact metal layer.2. The structure of claim 1 , wherein the first contact metal layer includes a material selected from the group consisting of a refractory metal claim 1 , a refractory metal alloyed with Ti or W claim 1 , a stable sulfide claim 1 , a stable sulfide alloyed with Ti or W claim 1 , a stable refractory metal nitride claim 1 , and a stable refractory metal carbide.3. The structure of claim 2 , wherein the refractory metal is selected from the group consisting of Mo claim 2 , Nb claim 2 , Ta claim 2 , W claim 2 , Re claim 2 , Ti claim 2 , V claim 2 , Cr claim 2 , Zr claim 2 , Hf claim 2 , Ru claim 2 , Rh claim 2 , Os claim 2 , and Ir.4. The structure of claim 2 , wherein the stable refractory metal nitride is selected from the group consisting of TiN and TaN.5. The structure of claim 2 , wherein the stable refractory metal carbide is selected from the group consisting of TiC and WC.6. The structure of claim 2 , wherein the stable sulfide includes LaS.7. The structure of claim 1 , wherein the second contact metal layer includes a noble metal.8. The structure of claim 1 , wherein the second contact metal layer includes a material selected from the ...

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Номер записи: 4
07-07-2016 дата публикации

Electrical and thermal contacts for bulk tetrahedrite material, and methods of making the same

Номер: WO2016109202A1
Автор: Adam Lorimer, Douglas Crane, John P. REIFENBERG, Jordan CHASE, Lindsay MILLER, Mario Aguirre, Matthew L. Scullin
Принадлежит: Alphabet Energy, Inc.

Under one aspect, a structure includes a tetrahedrite substrate; a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; and a second contact metal layer disposed over the first contact metal layer. A thermoelectric device can include such a structure. Under another aspect, a method includes providing a tetrahedrite substrate; disposing a first contact metal layer over and in direct contact with the tetrahedrite substrate; and disposing a second contact metal layer over the first contact metal layer. A method of making a thermoelectric device can include such a method.

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Номер записи: 5