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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 76. Отображено 76.
05-02-2019 дата публикации

Silicon carbide semiconductor device

Номер: US0010199457B2
Автор: Rina Tanaka, Yutaka Fukui, Katsutoshi Sugawara, Takeharu Kuroiwa, Yasuhiro Kagawa, TANAKA RINA, FUKUI YUTAKA, SUGAWARA KATSUTOSHI, KUROIWA TAKEHARU, KAGAWA YASUHIRO, Tanaka, Rina, Fukui, Yutaka, Sugawara, Katsutoshi, Kuroiwa, Takeharu, Kagawa, Yasuhiro
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

A silicon carbide semiconductor device includes a silicon carbide drift layer formed on an upper surface of a silicon carbide semiconductor substrate having an off angle, a body region, a source region, a plurality of trenches, a gate insulating film, a gate electrode, a source electrode, a drain electrode, and a depletion suppressing layer. The depletion suppressing layer is positioned to be sandwiched between the plurality of trenches in a plan view, and in a direction with the off angle of the silicon carbide semiconductor substrate, a distance between the depletion suppressing layer and one of the trenches adjacent to the depletion suppressing layer is different from another distance between the depletion suppressing layer and the other one of the trenches adjacent to the depletion suppressing layer.

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Номер записи: 1
25-04-2023 дата публикации

Silicon carbide semiconductor device, power converter, method of manufacturing silicon carbide semiconductor device, and method of manufacturing power converter

Номер: US0011637184B2
Автор: Kohei Adachi, Katsutoshi Sugawara, Yutaka Fukui, Hideyuki Hatta, Rina Tanaka
Принадлежит: MITSUBISHI ELECTRIC CORPORATION, Mitsubishi Electric Corporation

A drift layer is formed of silicon carbide and has a first conductivity type. A trench bottom protective layer is provided on a bottom portion of a gate trench and has a second conductivity type. A depletion suppressing layer is provided between a side surface of the gate trench and the drift layer, extends from a lower portion of a body region up to a position deeper than the bottom portion of the gate trench, has the first conductivity type, and has an impurity concentration of the first conductivity type higher than that of the drift layer. The impurity concentration of the first conductivity type of the depletion suppressing layer is reduced as the distance from the side surface of the gate trench becomes larger.

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Номер записи: 2
27-06-2017 дата публикации

Silicon carbide semiconductor device and manufacturing method therefor

Номер: US0009691858B2
Автор: Nobuo Fujiwara, Yasuhiro Kagawa, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corporation

A silicon carbide semiconductor device includes trenches formed in a lattice shape on the surface of a silicon carbide substrate on which a semiconductor layer is formed, and gate electrodes formed inside of the trenches via a gate insulating film. The depth of the trenches is smaller in a portion where the trenches are crossingly formed than in a portion where the trenches are formed in parallel to each other. Consequently, the silicon carbide semiconductor device is obtained that increases a withstand voltage between the gate electrodes and corresponding drain electrodes on the semiconductor device rear surface to prevent dielectric breakdown and, at the same time, has a large area of the gate electrodes, high channel density per unit area, and low ON resistance.

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Номер записи: 3
21-11-2017 дата публикации

Silicon carbide semiconductor device and manufacturing method for same

Номер: US0009825164B2
Автор: Yasuhiro Kagawa, Rina Tanaka, Yutaka Fukui, Kohei Ebihara, Shiro Hino, KAGAWA YASUHIRO, TANAKA RINA, FUKUI YUTAKA, EBIHARA KOHEI, HINO SHIRO, Kagawa Yasuhiro, Tanaka Rina, Fukui Yutaka, Ebihara Kohei, Hino Shiro
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP, MITSUBISHI ELECTRIC CORPORATION

A silicon carbide semiconductor device includes a drift layer of a first conductivity type, a source region of the first conductivity type, an active trench formed in penetration through the source region, a base region, a termination trench formed around the active trench, a gate insulating film formed on a bottom surface, a side surface of the active trench, a gate electrode embedded and formed in the active trench with the gate insulating film interposed therebetween, a protective diffusion layer of a second conductivity type formed in a lower portion of the active trench and a part of a lower portion of the termination trench and having a first impurity concentration, and a termination diffusion layer of the second conductivity type formed on an outside of the protective diffusion layer in the lower portion of the termination trench and having a second impurity concentration lower than the first impurity concentration.

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Номер записи: 4
05-11-2019 дата публикации

Semiconductor device

Номер: US0010468487B2
Автор: Katsutoshi Sugawara, Rina Tanaka, Yutaka Fukui, Kohei Adachi, Kazuya Konishi, SUGAWARA KATSUTOSHI, TANAKA RINA, FUKUI YUTAKA, ADACHI KOHEI, KONISHI KAZUYA, Sugawara, Katsutoshi, Tanaka, Rina, Fukui, Yutaka, Adachi, Kohei, Konishi, Kazuya
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

A semiconductor device in which an interlayer insulation film covers striped gate electrodes with a thickness larger than a thickness of a gate oxide film. The interlayer insulation film includes first contact holes outside each striped trench, and second contact holes inside the striped trench. In a plan view, striped active regions and striped contact regions both extending in a longitudinal direction exist. The striped active regions and the striped contact regions are alternately and repeatedly disposed in a direction perpendicular to the longitudinal direction. In each of the striped active regions, the source electrode is connected to a source region through the first contact hole. In each of the striped contact regions, the source electrode is connected to a protective diffusion layer through the second contact hole.

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Номер записи: 5
04-06-2019 дата публикации

Semiconductor device

Номер: US0010312233B2
Автор: Katsutoshi Sugawara, Yasuhiro Kagawa, Rina Tanaka, Yutaka Fukui, SUGAWARA KATSUTOSHI, KAGAWA YASUHIRO, TANAKA RINA, FUKUI YUTAKA, Sugawara, Katsutoshi, Kagawa, Yasuhiro, Tanaka, Rina, Fukui, Yutaka
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

A semiconductor device includes a base region of second conductivity type formed on a drift layer of first conductivity type, a source region of first conductivity type located in the base region, a trench passing through the base region and the source region and dividing cell regions in plan view, a protective diffusion layer of second conductivity type disposed on a bottom of the trench, a gate electrode embedded in the trench with a gate insulating film therebetween, a source electrode electrically connected to the source region, and a protective contact region disposed at each of positions of three or more cell regions and connecting the protective diffusion layer and the source electrode to each other. The protective contact regions are disposed such that a triangle whose vertices are centers of three protective contact regions located closest to one another is an acute triangle.

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Номер записи: 6
10-05-2016 дата публикации

Silicon-carbide semiconductor device and manufacturing method therefor

Номер: US0009337271B2
Автор: Yutaka Fukui, Yasuhiro Kagawa, Rina Tanaka, Yuji Abe, Masayuki Imaizumi, FUKUI YUTAKA, KAGAWA YASUHIRO, TANAKA RINA, ABE YUJI, IMAIZUMI MASAYUKI
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP, MITSUBISHI ELECTRIC CORPORATION

It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device formed on the silicon carbide semiconductor substrate having the off-angle, a low-channel doped region is provided on a first sidewall surface side of the trench in a well region, and a high-channel doped region having an effective acceptor concentration lower than that of the low-channel doped region is provided on a second sidewall surface side of the trench in the well region.

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Номер записи: 7
09-07-2019 дата публикации

Silicon carbide semiconductor device

Номер: US0010347724B2
Автор: Rina Tanaka, Katsutoshi Sugawara, Yasuhiro Kagawa, Naruhisa Miura, TANAKA RINA, SUGAWARA KATSUTOSHI, KAGAWA YASUHIRO, MIURA NARUHISA, Tanaka, Rina, Sugawara, Katsutoshi, Kagawa, Yasuhiro, Miura, Naruhisa
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

A gate insulating film covers a trench penetrating through a source region and a body region and reaching a drift layer in each of a first cell region and a second cell region. The gate electrode is provided in the trench. A high-concentration layer of the first conductivity type is provided between the drift layer and the body region in the first cell region and has a second impurity concentration higher than the first impurity concentration. A current restriction layer is provided between the drift layer and the body region in the second cell region and has the first conductivity type and a third impurity concentration higher than the first impurity concentration and lower than the second impurity concentration.

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Номер записи: 8
15-02-2022 дата публикации

Silicon carbide semiconductor device and manufacturing method of same

Номер: US0011251299B2
Автор: Rina Tanaka, Katsutoshi Sugawara, Yutaka Fukui, Hideyuki Hatta, Yusuke Miyata
Принадлежит: MITSUBISHI ELECTRIC CORPORATION

A drift layer made of silicon carbide has a first conductivity type. A body region on the drift layer has a second conductivity type. A source region on the body region has the first conductivity type. A gate insulating film is on each inner wall of at least one trench. A protective layer has at least a portion below the trench, is in contact with the drift layer, and has the second conductivity type. A first low-resistance layer is in contact with the trench and the protective layer, straddles a border between the trench and the protective layer in the depth direction, has the first conductivity type, and has a higher impurity concentration than the drift layer. A second low-resistance layer is in contact with the first low-resistance layer, is away from the trench, has the first conductivity type, and has a higher impurity concentration than the first low-resistance layer.

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Номер записи: 9
17-12-2019 дата публикации

Insulated gate silicon carbide semiconductor device and method for manufacturing same

Номер: US0010510843B2
Автор: Yasuhiro Kagawa, Rina Tanaka, Yutaka Fukui, Naruhisa Miura, Yuji Abe, Masayuki Imaizumi, KAGAWA YASUHIRO, TANAKA RINA, FUKUI YUTAKA, MIURA NARUHISA, ABE YUJI, IMAIZUMI MASAYUKI, Kagawa, Yasuhiro, Tanaka, Rina, Fukui, Yutaka, Miura, Naruhisa, Abe, Yuji, Imaizumi, Masayuki
Принадлежит: MITSUBISHI ELECTRIC CORPORATION, MITSUBISHI ELECTRIC CORP

An insulated gate silicon carbide semiconductor device includes: a drift layer of a first conductivity type on a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface; a first base region; a source region; a trench; a gate insulating film; a protective diffusion layer; and a second base region. The trench sidewall surface in contact with the second base region is a surface having a trench off-angle of more than 0° in a <0001> direction with respect to a plane parallel to the <0001> direction. The insulated gate silicon carbide semiconductor device can relieve an electric field of a gate insulating film and suppress an increase in on-resistance and provide a method for manufacturing the same.

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Номер записи: 10
26-09-2017 дата публикации

Silicon carbide semiconductor device and manufacturing method therefor

Номер: US0009773874B2
Автор: Nobuo Fujiwara, Yasuhiro Kagawa, Rina Tanaka, Yutaka Fukui, FUJIWARA NOBUO, KAGAWA YASUHIRO, TANAKA RINA, FUKUI YUTAKA, Fujiwara Nobuo, Kagawa Yasuhiro, Tanaka Rina, Fukui Yutaka
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

A silicon carbide semiconductor device includes trenches formed in a lattice shape on the surface of a silicon carbide substrate on which a semiconductor layer is formed, and gate electrodes formed inside of the trenches via a gate insulating film. The depth of the trenches is smaller in a portion where the trenches are crossingly formed than in a portion where the trenches are formed in parallel to each other. Consequently, the silicon carbide semiconductor device is obtained that increases a withstand voltage between the gate electrodes and corresponding drain electrodes on the semiconductor device rear surface to prevent dielectric breakdown and, at the same time, has a large area of the gate electrodes, high channel density per unit area, and low ON resistance.

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Номер записи: 11
22-08-2017 дата публикации

Insulated gate silicon carbide semiconductor device and method for manufacturing same

Номер: US0009741797B2
Автор: Yasuhiro Kagawa, Rina Tanaka, Yutaka Fukui, Naruhisa Miura, Yuji Abe, Masayuki Imaizumi, KAGAWA YASUHIRO, TANAKA RINA, FUKUI YUTAKA, MIURA NARUHISA, ABE YUJI, IMAIZUMI MASAYUKI, Kagawa Yasuhiro, Tanaka Rina, Fukui Yutaka, Miura Naruhisa, Abe Yuji, Imaizumi Masayuki
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP, MITSUBISHI ELECTRIC CORPORATION

An insulated gate silicon carbide semiconductor device includes: a drift layer of a first conductivity type on a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface; a first base region; a source region; a trench; a gate insulating film; a protective diffusion layer; and a second base region. The trench sidewall surface in contact with the second base region is a surface having a trench off-angle of more than 0° in a <0001> direction with respect to a plane parallel to the <0001> direction. The insulated gate silicon carbide semiconductor device can relieve an electric field of a gate insulating film and suppress an increase in on-resistance and provide a method for manufacturing the same.

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Номер записи: 12
23-08-2016 дата публикации

Silicon-carbide semiconductor device and method for manufacturing the same

Номер: US0009425261B2
Автор: Yutaka Fukui, Yasuhiro Kagawa, Rina Tanaka, Yuji Abe, Masayuki Imaizumi, FUKUI YUTAKA, KAGAWA YASUHIRO, TANAKA RINA, ABE YUJI, IMAIZUMI MASAYUKI, Fukui Yutaka, Kagawa Yasuhiro, Tanaka Rina, Abe Yuji, Imaizumi Masayuki
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP, MITSUBISHI ELECTRIC CORPORATION

A silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device, a high-concentration well region is formed in a well region, and a distance from a first sidewall surface of a trench of the silicon carbide semiconductor to the high-concentration well region is smaller than a distance from a second sidewall surface of the trench to the high-concentration well region, the second sidewall surface facing the first sidewall surface of the trench through the gate electrode.

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Номер записи: 13
22-10-2019 дата публикации

Semiconductor device having a gate trench and an outside trench

Номер: US0010453951B2
Автор: Yutaka Fukui, Yasuhiro Kagawa, Kensuke Taguchi, Nobuo Fujiwara, Katsutoshi Sugawara, Rina Tanaka, FUKUI YUTAKA, KAGAWA YASUHIRO, TAGUCHI KENSUKE, FUJIWARA NOBUO, SUGAWARA KATSUTOSHI, TANAKA RINA, Fukui, Yutaka, Kagawa, Yasuhiro, Taguchi, Kensuke, Fujiwara, Nobuo, Sugawara, Katsutoshi, Tanaka, Rina
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

A trench-gate semiconductor device including an outside trench, increases reliability of an insulating film at a corner of an open end of the outside trench. The semiconductor device includes: a gate trench reaching an inner part of an n-type drift layer in a cell region; an outside trench outside the cell region; a gate electrode formed inside the gate trench through a gate insulating film; a gate line formed inside the outside trench through an insulating film; and a gate line leading portion formed through the insulating film to cover a corner of an open end of the outside trench closer to the cell region, and electrically connecting the gate electrode to the gate line, and the surface layer of the drift layer in contact with the corner has a second impurity region of p-type that is a part of the well region.

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Номер записи: 14
18-12-2018 дата публикации

Silicon carbide semiconductor device and method for manufacturing same

Номер: US0010157986B2
Автор: Rina Tanaka, Yasuhiro Kagawa, Katsutoshi Sugawara, Naruhisa Miura, TANAKA RINA, KAGAWA YASUHIRO, SUGAWARA KATSUTOSHI, MIURA NARUHISA, Tanaka, Rina, Kagawa, Yasuhiro, Sugawara, Katsutoshi, Miura, Naruhisa
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

A drift layer of a first conductivity type is made of silicon carbide. A body region of a second conductivity type is provided on the drift layer. A source region of the first conductivity type is provided on the body region. A source electrode is connected to the source region. A gate insulating film is provided on side and bottom surfaces of a trench which penetrates the body region and the source region. A gate electrode is provided in the trench with the gate insulating film interposed therebetween. A trench-bottom-surface protective layer of the second conductivity type provided below the bottom surface of the trench in the drift layer is electrically connected to the source electrode. The trench-bottom-surface protective layer has a high-concentration protective layer, and a first low-concentration protective layer provided below the high-concentration protective layer and having an impurity concentration lower than that of the high-concentration protective layer.

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Номер записи: 15
24-04-2018 дата публикации

Silicon-carbide semiconductor device and manufacturing method thereof

Номер: US0009954072B2
Автор: Rina Tanaka, Yasuhiro Kagawa, Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, TANAKA RINA, KAGAWA YASUHIRO, HINO SHIRO, MIURA NARUHISA, IMAIZUMI MASAYUKI, Tanaka, Rina, Kagawa, Yasuhiro, Hino, Shiro, Miura, Naruhisa, Imaizumi, Masayuki
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

A silicon-carbide semiconductor device that relaxes field intensity in a gate insulating film, and that has a low ON-resistance. The silicon-carbide semiconductor device includes: an n-type silicon-carbide substrate; a drift layer formed on a topside of the n-type silicon-carbide substrate; a trench formed in the drift layer and that includes therein a gate insulating film and a gate electrode; a p-type high-concentration well region formed parallel to the trench with a spacing therefrom and that has a depth larger than that of the trench; and a p-type body region formed to have a depth that gradually increases when nearing from a position upward from the bottom end of the trench by approximately the thickness of the gate insulating film at the bottom of the trench toward the lower end of the p-type high-concentration well region.

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Номер записи: 16
15-05-2018 дата публикации

Silicon carbide semiconductor device

Номер: US0009972676B2
Автор: Rina Tanaka, Yasuhiro Kagawa, Naruhisa Miura, Yuji Ebiike, TANAKA RINA, KAGAWA YASUHIRO, MIURA NARUHISA, EBIIKE YUJI, Tanaka, Rina, Kagawa, Yasuhiro, Miura, Naruhisa, Ebiike, Yuji
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP, MITSUBISHI ELECTRIC CORPORATION

A silicon carbide semiconductor device includes: a drift layer of a first conductivity type made of silicon carbide; a well region of a second conductivity type formed on the drift layer; a source region of a first conductivity type formed on the well region; a gate insulating film formed on an inner wall of a trench extending from a front surface of the source region through the well region, at least a part of a side surface of the gate insulating film being in contact with the drift layer; a gate electrode formed in the trench with the gate insulating film therebetween; a protective layer of the second conductivity type formed in the drift layer; and a depletion suppressing layer of the first conductivity type formed in the drift layer so as to be in contact with a side surface of the protective layer.

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Номер записи: 17
06-02-2024 дата публикации

Silicon carbide semiconductor device and power converter

Номер: US0011894428B2
Автор: Hideyuki Hatta, Rina Tanaka, Katsutoshi Sugawara, Yutaka Fukui
Принадлежит: MITSUBISHI ELECTRIC CORPORATION, Mitsubishi Electric Corporation

The present invention relates to a silicon carbide semiconductor device that includes a Schottky barrier diode in a field-effect transistor and includes a first trench provided through first and second semiconductor regions in a thickness direction and reaches inside a semiconductor layer, a second trench provided through the second semiconductor region in the thickness direction and reaches inside the semiconductor layer, a gate electrode embedded in the first trench via a gate insulating film, a Schottky barrier diode electrode embedded in the second trench, a first low-resistance layer having contact with a trench side wall of the first trench, and a second low-resistance layer having contact with a trench side wall of the second trench. The second low-resistance layer has an impurity concentration that is higher than the impurity concentration in the semiconductor layer and lower than the impurity concentration in the first low-resistance layer.

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Номер записи: 18
08-03-2022 дата публикации

Semiconductor device and power converter

Номер: US0011271084B2
Автор: Yutaka Fukui, Katsutoshi Sugawara, Hideyuki Hatta, Hidenori Koketsu, Rina Tanaka, Yusuke Miyata
Принадлежит: MITSUBISHI ELECTRIC CORPORATION

The present invention relates to a semiconductor device having trench gates. The semiconductor device includes the following: a first semiconductor layer; a first semiconductor region selectively disposed in the upper layer of the first semiconductor layer; a second semiconductor region in contact with the first semiconductor region; a third semiconductor region on the bottom surfaces of the first and second semiconductor regions; gate trenches provided to penetrate the first and third semiconductor regions in the thickness direction of the first and third semiconductor regions to reach the inside of the first semiconductor layer; a field-reducing region on the bottom of each gate trench; and connection layers arranged in the first semiconductor layer at intervals so as to be each in contact with at least one of sidewalls of the gate trenches, the connection layers each electrically connecting the field-reducing region to the third semiconductor region.

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Номер записи: 19
15-11-2016 дата публикации

Semiconductor device including well regions with different impurity densities

Номер: US0009496344B2
Автор: Rina Tanaka, Akihiko Furukawa, Masayuki Imaizumi, Yuji Abe, TANAKA RINA, FURUKAWA AKIHIKO, IMAIZUMI MASAYUKI, ABE YUJI, Tanaka Rina, Furukawa Akihiko, Imaizumi Masayuki, Abe Yuji
Принадлежит: Mitsubishi Electric Corporation, TANAKA RINA, FURUKAWA AKIHIKO, IMAIZUMI MASAYUKI, ABE YUJI, MITSUBISHI ELECTRIC CORP, Tanaka Rina, Furukawa Akihiko, Imaizumi Masayuki, Abe Yuji

In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.

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Номер записи: 20
04-07-2017 дата публикации

Semiconductor device

Номер: US0009698221B2
Автор: Katsutoshi Sugawara, Yasuhiro Kagawa, Rina Tanaka, Yutaka Fukui, SUGAWARA KATSUTOSHI, KAGAWA YASUHIRO, TANAKA RINA, FUKUI YUTAKA, Sugawara Katsutoshi, Kagawa Yasuhiro, Tanaka Rina, Fukui Yutaka
Принадлежит: Mitsubishi Electric Corporation, MITSUBISHI ELECTRIC CORP

It is an object to provide the techniques capable of restraining avalanche breakdown at cells opposite to a corner portion of a gate pad. A MOSFET is provided with a corner cell, which is disposed in a region opposite to a corner portion of a gate pad in a planar view, and an internal cell, which is disposed in a region in the opposite side of the gate pad with respect to the corner cell. In a contour shape of the corner cell, a longest distance among distances each of which is shortest distance between a longest side and each of sides opposite to the longest side is equal to or less than two times of a length of one of equal sides or a short side of the internal cell.

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Номер записи: 21
19-12-2023 дата публикации

Silicon carbide semiconductor device and method of manufacturing same

Номер: US0011848358B2
Автор: Rina Tanaka, Katsutoshi Sugawara, Yutaka Fukui, Hideyuki Hatta, Yusuke Miyata
Принадлежит: MITSUBISHI ELECTRIC CORPORATION, Mitsubishi Electric Corporation

A drift layer is made of silicon carbide and has a first conductivity type. At least one trench has a first side surface facing a Schottky barrier diode region, and a second side surface extending in a transistor region and contacting a source region, a body region, and the drift layer. A first protective region is provided under the at least one trench, has a second conductivity type, and is higher in impurity concentration of the second conductivity type than the body region. A second protective region extends from the first protective region, reaches at least one of the first side surface and an end region of the second side surface continuous with the first side surface, has an uppermost portion shallower than a lowermost portion of the body region, and is higher in impurity concentration of the second conductivity type than the body region.

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Номер записи: 22
26-10-2021 дата публикации

Semiconductor device and power conversion device

Номер: US0011158704B2
Автор: Kohei Adachi, Katsutoshi Sugawara, Yutaka Fukui, Rina Tanaka, Kazuya Konishi, ADACHI KOHEI, SUGAWARA KATSUTOSHI, FUKUI YUTAKA, TANAKA RINA, KONISHI KAZUYA, Adachi, Kohei, Sugawara, Katsutoshi, Fukui, Yutaka, Tanaka, Rina, Konishi, Kazuya
Принадлежит: MITSUBISHI ELECTRIC CORPORATION, MITSUBISHI ELECTRIC CORP, Mitsubishi Electric Corporation

A semiconductor device including: a trench gate; a trench-bottom protecting layer of a second conductivity type provided in a semiconductor layer of a first conductivity type while contacting a bottom of trenches; and a depletion suppressing layer of the first conductivity type provided between adjacent trench-bottom protecting layers, wherein the depletion suppressing layer includes an intermediate point that is horizontally equidistant to the adjacent trench-bottom protecting layers and is formed of a size to contact neither the trenches nor the trench-bottom protecting layers, and an impurity concentration of the depletion suppressing layer is set higher than an impurity concentration of the semiconductor layer.

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Номер записи: 23
27-01-2022 дата публикации

FIBROUS CELLULOSE

Номер: US20220024826A1
Автор: TANAKA Rina, TSUTSUMI Yoshiyuki, Yamamoto Hiroki
Принадлежит: OJI HOLDINGS CORPORATION

Provided is fibrous cellulose used for producing a concrete-pump pressure-feeding primer containing calcium carbonate powder, which is excellent in a dispersion stability and a pressure-feeding property. The fibrous cellulose is used for producing the concrete-pump pressure-feeding primer through mixing with the calcium carbonate powder. The fibrous cellulose contains ultrafine fibrous modified cellulose which has an ionic group and has a fiber width of 1,000 nm or less. 110-. (canceled)11. A method for producing a concrete pump pressure-feeding primer comprising mixing fibrous cellulose with calcium carbonate powder ,wherein the fibrous cellulose contains ultrafine fibrous modified cellulose which has an ionic group and has a fiber width of 1,000 nm or less.12. The method for producing a concrete pump pressure-feeding primer according to claim 11 , wherein the fibrous cellulose further contains at least one selected from a group consisting of pulp fibers having a fiber width of 10 μm or more and ultrafine fibrous cellulose having a fiber width of 1 claim 11 ,000 nm or less and having no ionic group.13. The method for producing a concrete pump pressure-feeding primer according to claim 12 , wherein the fibrous cellulose contains the pulp fibers having a fiber width of 10 μm or more claim 12 , and a mass ratio of the pulp fibers to the ultrafine fibrous modified cellulose (pulp fibers/ultrafine fibrous modified cellulose) is 30/70 to 90/10.14. The method for producing a concrete pump pressure-feeding primer according to claim 12 , wherein the fibrous cellulose contains the ultrafine fibrous cellulose having no ionic group claim 12 , and a mass ratio of the ultrafine fibrous cellulose containing no ionic group to the ultrafine fibrous modified cellulose (ultrafine fibrous cellulose containing no ionic group/ultrafine fibrous modified cellulose) is 30/70 to 90/10.15. The method for producing a concrete pump pressure-feeding primer according to claim 11 , wherein a ...

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Номер записи: 24
03-02-2022 дата публикации

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

Номер: US20220037474A1
Автор: Fukui Yutaka, HATTA Hideyuki, MIYATA Yusuke, SUGAWARA Katsutoshi, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A drift layer is made of silicon carbide and has a first conductivity type. At least one trench has a first side surface facing a Schottky barrier diode region, and a second side surface extending in a transistor region and contacting a source region, a body region, and the drift layer. A first protective region is provided under the at least one trench, has a second conductivity type, and is higher in impurity concentration of the second conductivity type than the body region. A second protective region extends from the first protective region, reaches at least one of the first side surface and an end region of the second side surface continuous with the first side surface, has an uppermost portion shallower than a lowermost portion of the body region, and is higher in impurity concentration of the second conductivity type than the body region. 1. A silicon carbide semiconductor device with a transistor region in which a Schottky barrier diode region is interposed in at least one direction included in an in-plane direction , the silicon carbide semiconductor device comprising: a drift layer extending over the transistor region and the Schottky barrier diode region, reaching a surface of the semiconductor layer in the Schottky barrier diode region, being made of silicon carbide, and having a first conductivity type,', 'a body region being provided on the drift layer in the transistor region and having a second conductivity type different from the first conductivity type,', 'a source region being provided on the body region and having the first conductivity type,', 'at least one trench having a first side surface facing the Schottky barrier diode region, and a second side surface extending in the transistor region and contacting the source region, the body region, and the drift layer,', 'a first protective region being provided below the at least one trench, having the second conductivity type, and being higher in impurity concentration of the second conductivity ...

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Номер записи: 25
19-02-2015 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20150048384A1
Автор: ABE Yuji, Furukawa Akihiko, Imaizumi Masayuki, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode. 110-. (canceled)11. A semiconductor device comprising:a wide band gap semiconductor substrate that is of a first conductive type;a drift layer that is of the first conductive type and configured with a wide band gap semiconductor and that is formed on a first main surface of the wide band gap semiconductor substrate;a plurality of first well regions that are of a second conductive type and that are formed in a surface layer portion of the drift layer adjacent to each other at a predetermined interval;a second well region that is formed adjacent to each of the first well regions and toward the semiconductor substrate, has a second conductive type impurity density lower than the first well regions, and has a width narrower than the first well regions;a Schottky electrode that is formed on surfaces of the drift layer and the first well regions to form a Schottky connection with the drift layer; andan ohmic electrode that is formed on a second main surface of the semiconductor substrate which is opposite to the first main surface,wherein when the semiconductor device is in an off-state, there remain regions that are not depleted in the first well regions.12. The semiconductor device according to claim 11 , wherein when the semiconductor device is in an off-state claim 11 , a surface layer portion of the drift layer that is between the first well regions and is in contact with the Schottky electrode is entirely depleted by a depletion layer expanding from the ...

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Номер записи: 26
23-02-2017 дата публикации

Semiconductor device

Номер: US20170053984A1
Автор: Katsutoshi Sugawara, Rina Tanaka, Yasuhiro Kagawa, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

It is an object to provide the techniques capable of restraining avalanche breakdown at cells opposite to a corner portion of a gate pad. A MOSFET is provided with a corner cell, which is disposed in a region opposite to a corner portion of a gate pad in a planar view, and an internal cell, which is disposed in a region in the opposite side of the gate pad with respect to the corner cell. In a contour shape of the corner cell, a longest distance among distances each of which is shortest distance between a longest side and each of sides opposite to the longest side is equal to or less than two times of a length of one of equal sides or a short side of the internal cell.

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Номер записи: 27
10-03-2016 дата публикации

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20160071937A1
Автор: ABE Yuji, Fukui Yutaka, Imaizumi Masayuki, Kagawa Yasuhiro, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device, a high-concentration well region is formed in a well region, and a distance from a first sidewall surface of a trench of the silicon carbide semiconductor to the high-concentration well region is smaller than a distance from a second sidewall surface of the trench to the high-concentration well region, the second sidewall surface facing the first sidewall surface of the trench through the gate electrode. 1. A silicon carbide semiconductor device , comprising:a drift region of a first conductivity type that is formed on a first main surface of a silicon carbide semiconductor substrate having an off-angle and is made of silicon carbide;a well region of a second conductivity type that is formed on a surface of said drift region and is made of silicon carbide;a source region of the first conductivity type that is selectively formed in a surface layer portion of said well region and is made of silicon carbide;a trench that penetrates said well region from a surface of said source region and reaches said drift region;a gate electrode that is formed inside said trench through a gate insulating film;a source electrode that is connected to said well region and said source region;a drain electrode that is formed on a second main surface while being in contact with said silicon carbide semiconductor substrate, the second main surface being a surface opposite to the first main surface of said silicon carbide semiconductor substrate; anda high-concentration well region of the second conductivity type that is formed in said well region and has an impurity concentration higher than that of said well region,wherein a distance from a first sidewall surface of said trench to said high-concentration ...

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Номер записи: 28
15-03-2018 дата публикации

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: US20180076285A1
Автор: Kagawa Yasuhiro, Miura Naruhisa, SUGAWARA Katsutoshi, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A drift layer of a first conductivity type is made of silicon carbide. A body region of a second conductivity type is provided on the drift layer. A source region of the first conductivity type is provided on the body region. A source electrode is connected to the source region. A gate insulating film is provided on side and bottom surfaces of a trench which penetrates the body region and the source region. A gate electrode is provided in the trench with the gate insulating film interposed therebetween. A trench-bottom-surface protective layer of the second conductivity type provided below the bottom surface of the trench in the drift layer is electrically connected to the source electrode. The trench-bottom-surface protective layer has a high-concentration protective layer, and a first low-concentration protective layer provided below the high-concentration protective layer and having an impurity concentration lower than that of the high-concentration protective layer. 1. A silicon carbide semiconductor device comprising:a drift layer of a first conductivity type, made of silicon carbide;a body region of a second conductivity type, provided on said drift layer;a source region of a first conductivity type, provided on said body region;a source electrode connected to said source region;a gate insulating film provided on a side surface and a bottom surface of a trench penetrating said body region and said source region;a gate electrode provided in said trench with said gate insulating film interposed therebetween; and a high-concentration protective layer, and', 'a first low-concentration protective layer provided below said high-concentration protective layer and having an impurity concentration lower than that of said high-concentration protective layer., 'a trench-bottom-surface protective layer of the second conductivity type, provided below the bottom surface of said trench in said drift layer and electrically connected to said source electrode, said trench- ...

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Номер записи: 29
31-03-2022 дата публикации

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

Номер: US20220102503A1
Автор: Fukui Yutaka, HATTA Hideyuki, SUGAWARA Katsutoshi, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

The present invention relates to a silicon carbide semiconductor device that includes a Schottky barrier diode in a field-effect transistor and includes a first trench provided through first and second semiconductor regions in a thickness direction and reaches inside a semiconductor layer, a second trench provided through the second semiconductor region in the thickness direction and reaches inside the semiconductor layer, a gate electrode embedded in the first trench via a gate insulating film, a Schottky barrier diode electrode embedded in the second trench, a first low-resistance layer having contact with a trench side wall of the first trench, and a second low-resistance layer having contact with a trench side wall of the second trench. The second low-resistance layer has an impurity concentration that is higher than the impurity concentration in the semiconductor layer and lower than the impurity concentration in the first low-resistance layer. 1. A silicon carbide semiconductor device that includes a Schottky barrier diode in a field-effect transistor , the silicon carbide semiconductor device comprising:a semiconductor layer of a first conductivity type;a first semiconductor region of the first conductivity type provided in an upper layer portion of the semiconductor layer;a second semiconductor region of a second conductivity type provided in contact with a bottom face of the first semiconductor region;a first trench provided through the first semiconductor region and the second semiconductor region in a thickness direction and having a bottom face that reaches inside the semiconductor layer;a gate electrode embedded in the first trench via a gate insulating film that covers an inner face of the first trench;an interlayer insulation film having a contact portion above the first semiconductor region;a first low-resistance layer of the first conductivity type provided in the semiconductor layer to have contact with at least one trench side wall of the first ...

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Номер записи: 30
12-05-2022 дата публикации

SEMICONDUCTOR DEVICE AND POWER CONVERTER

Номер: US20220149167A1
Автор: Fukui Yutaka, HATTA Hideyuki, Koketsu Hidenori, MIYATA Yusuke, SUGAWARA Katsutoshi, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

The present invention relates to a semiconductor device having trench gates. The semiconductor device includes the following: a first semiconductor layer; a first semiconductor region selectively disposed in the upper layer of the first semiconductor layer; a second semiconductor region in contact with the first semiconductor region; a third semiconductor region on the bottom surfaces of the first and second semiconductor regions; gate trenches provided to penetrate the first and third semiconductor regions in the thickness direction of the first and third semiconductor regions to reach the inside of the first semiconductor layer; a field-reducing region on the bottom of each gate trench; and connection layers arranged in the first semiconductor layer at intervals so as to be each in contact with at least one of sidewalls of the gate trenches, the connection layers each electrically connecting the field-reducing region to the third semiconductor region. 1. A semiconductor device comprising:a first semiconductor layer of a first conductivity type;a first semiconductor region of the first conductivity type selectively disposed in an upper layer of the first semiconductor layer;a second semiconductor region of a second conductivity type disposed in the upper layer of the first semiconductor layer so as to be in contact with the first semiconductor region;a third semiconductor region of the second conductivity type disposed on bottom surfaces of the first and second semiconductor regions;a plurality of gate trenches provided to penetrate the first and third semiconductor regions in a thickness direction of the first and third semiconductor regions, the plurality of gate trenches each comprising a bottom surface reaching an inside of the first semiconductor layer, the plurality of gate trenches being in a form of stripes and extending in one direction in a plan view and disposed so as not to be in contact with each other at intervals;a field-reducing region of the second ...

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Номер записи: 31
30-04-2020 дата публикации

THICKENER, COMPOSITION, AND SHEET

Номер: US20200131279A1
Автор: FUSHIMI Hayato, TANAKA Rina
Принадлежит: OJI HOLDINGS CORPORATION

It is an object of the present invention to provide a thickener capable of exhibiting excellent light resistance. The present invention relates to a thickener comprising cellulose fibers having a fiber width of 8 nm or less and water, wherein the thickener is a slurry or a gel, and when the thickener is filled in a colorless and transparent glass cell having an inside dimension of 1 cm in depth×4 cm in width×4.5 cm in height and the thickener is then irradiated with ultraviolet rays with a wavelength of 300 nm or more and 400 nm or less, using a xenon lamp, from the side of the maximum area surface of the glass cell, so as to be an irradiance of 180 W/mand an integrated light amount of 500 mJ/m, the amount of a change in the yellowness before and after ultraviolet irradiation measured in accordance with JIS K 7373 is 10 or less. 1. A thickener comprising cellulose fibers having a fiber width of 8 nm or less and water , whereinthe thickener is a slurry or a gel, and{'sup': 2', '2, 'when the thickener is filled in a colorless and transparent glass cell having an inside dimension of 1 cm in depth×4 cm in width×4.5 cm in height and the thickener is then irradiated with ultraviolet rays with a wavelength of 300 nm or more and 400 nm or less, using a xenon lamp, from the side of the maximum area surface of the glass cell, so as to be an irradiance of 180 W/mand an integrated light amount of 500 mJ/m,'}the amount of a change in the yellowness before and after ultraviolet irradiation measured in accordance with JIS K 7373 is 10 or less.2. The thickener according to claim 1 , wherein a diluted solution of the thickener having a solids concentration of 0.5% by mass has a shear viscosity of 3000 mPa·s or more at 25° C. and at a shear velocity of 1 s.3. The thickener according to claim 1 , wherein a diluted solution of the thickener having a solids concentration of 0.5% by mass has a shear viscosity of 250 mPa·s or more at 25° C. and at a shear velocity of 100 s.4. The ...

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Номер записи: 32
29-09-2022 дата публикации

Wound-covering material and production method therefor

Номер: US20220305170A1
Автор: Chinatsu MIYAZAKI, Kunihiro Ohshima, Minoru Sugiyama, Rina Tanaka, Yuko Tanaka
Принадлежит: Ojl Holdings Corp

The present invention relates to a wound covering material containing at least a hydrogel, wherein the hydrogel contains fine fibrous celluloses having ionic substituents. The present invention also relates to a method of producing the wound covering material, including a process of obtaining a hydrogel using a mixture of hydrophilic polymers and fine fibrous celluloses having ionic substituents. Accordingly, there are provided a wound covering material having excellent water retention and strength and favorable adhesiveness and peelability with respect to a living body, and a method of producing the same.

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Номер записи: 33
30-06-2016 дата публикации

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

Номер: US20160190307A1
Автор: EBIHARA Kohei, Fukui Yutaka, Hino Shiro, Kagawa Yasuhiro, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A silicon carbide semiconductor device includes a drift layer of a first conductivity type, a source region of the first conductivity type, an active trench formed in penetration through the source region, a base region, a termination trench formed around the active trench, a gate insulating film formed on a bottom surface, a side surface of the active trench, a gate electrode embedded and formed in the active trench with the gate insulating film interposed therebetween, a protective diffusion layer of a second conductivity type formed in a lower portion of the active trench and a part of a lower portion of the termination trench and having a first impurity concentration, and a termination diffusion layer of the second conductivity type formed on an outside of the protective diffusion layer in the lower portion of the termination trench and having a second impurity concentration lower than the first impurity concentration. 1. A silicon carbide semiconductor device comprising:a drift layer of a first conductivity type formed in an active region and a termination region being a surrounding region of said active region;a base region of a second conductivity type formed on an upper portion of said drift layer in said active region;a source region of the first conductivity type formed on an upper portion in said base region;an active trench formed in penetration through said source region and said base region in said active region;a termination trench formed to surround said active trench in said drift layer of said termination region;a gate insulating film formed on a bottom surface and a side surface of said active trench;a gate electrode formed in said active trench with said gate insulating film interposed therebetween;a protective diffusion layer of the second conductivity type formed in a lower portion of said active trench and a part of a lower portion of said termination trench and having a concentration of impurities of the second conductivity type which is a ...

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Номер записи: 34
22-07-2021 дата публикации

Cellulose fiber-containing composition and sheet

Номер: US20210222366A1
Автор: Hirokazu Sunagawa, Koh SAKAI, Rina Tanaka
Принадлежит: Oji Holdings Corp

It is an object of the present invention to provide a composition comprising cellulose fibers having a fiber width of 1000 nm or less, the properties of which are maintained even after long-term storage. The present invention relates to a cellulose fiber-containing composition comprising cellulose fibers having a fiber width of 1000 nm or less and an antiseptic containing at least one type selected from a nitrogen atom, a sulfur atom and a halogen atom, wherein the content of the antiseptic is 10 parts by mass or less with respect to 100 parts by mass of the cellulose fibers

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Номер записи: 35
22-07-2021 дата публикации

Cellulose fiber-containing composition

Номер: US20210222367A1
Автор: Hayato FUSHIMI, Kazuo Yamane, Rina Tanaka
Принадлежит: Oji Holdings Corp

It is an object of the present invention to provide an ultrafine cellulose fiber-containing composition having favorable dispersibility even in the presence of a specific organic solvent. The present invention relates to a cellulose fiber-containing composition comprising cellulose fibers having a fiber width of 1000 nm or less, water, and alcohol, wherein the alcohol is at least one type selected from monovalent primary alcohol, monovalent secondary alcohol, and polyhydric alcohol, and the dielectric constant of the cellulose fiber-containing composition at 25° C. is 55 or more and less than 80.

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Номер записи: 36
21-07-2016 дата публикации

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: US20160211334A1
Автор: ABE Yuji, Fukui Yutaka, Kagawa Yasuhiro, Miura Naruhisa, TANAKA Rina, TOMINAGA Takaaki
Принадлежит: Mitsubishi Electric Corporation

A silicon carbide semiconductor device capable of decreasing an ON-state resistance and improving a breakdown voltage. The silicon carbide semiconductor device includes: a drift layer of a first conductivity type made of a silicon carbide semiconductor; a depletion suppression layer of the first conductivity type formed on the drift layer and having a first conductivity type impurity concentration higher than that of the drift layer; a body region of a second conductivity type formed on the depletion suppression layer; a trench extending through the body region and the depletion suppression layer to reach the drift layer; and a gate insulation film formed along bottom and side surfaces of the trench. The depletion suppression layer has a thickness equal to or greater than 0.06 μm and equal to or less than 0.31 μm. 1. A silicon carbide semiconductor device comprising:a drift layer of a first conductivity type made of a silicon carbide semiconductor;a depletion suppression layer of the first conductivity type formed on said drift layer and having a first conductivity type impurity concentration higher than that of said drift layer;a body region of a second conductivity type formed on said depletion suppression layer;a trench extending through said body region and said depletion suppression layer to reach said drift layer; anda gate insulation film formed along bottom and side surfaces of said trench,wherein said depletion suppression layer has a thickness equal to or greater than 0.06 μm and equal to or less than 0.31 μm, and{'sup': 17', '−3, 'the first conductivity type impurity concentration of said depletion suppression layer is equal to or greater than 1.0×10cm.'}214-. (canceled)15. The silicon carbide semiconductor device according to claim 1 , wherein{'sup': 14', '18', '−3, 'the second conductivity type impurity concentration of said body region is 1.0×10to 1.0×10cm.'}16. The silicon carbide semiconductor device according to claim 1 , whereina distance between ...

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Номер записи: 37
18-06-2020 дата публикации

Silicon carbide semiconductor device, power converter, method of manufacturing silicon carbide semiconductor device, and method of manufacturing power converter

Номер: US20200194554A1
Автор: Hideyuki HATTA, Katsutoshi Sugawara, Kohei Adachi, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

A drift layer is formed of silicon carbide and has a first conductivity type. A trench bottom protective layer is provided on a bottom portion of a gate trench and has a second conductivity type. A depletion suppressing layer is provided between a side surface of the gate trench and the drift layer, extends from a lower portion of a body region up to a position deeper than the bottom portion of the gate trench, has the first conductivity type, and has an impurity concentration of the first conductivity type higher than that of the drift layer. The impurity concentration of the first conductivity type of the depletion suppressing layer is reduced as the distance from the side surface of the gate trench becomes larger.

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Номер записи: 38
04-07-2019 дата публикации

Semiconductor device and power conversion device

Номер: US20190206987A1
Автор: Katsutoshi Sugawara, Kazuya Konishi, Kohei Adachi, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

A semiconductor device including: a trench gate; a trench-bottom protecting layer of a second conductivity type provided in a semiconductor layer of a first conductivity type while contacting a bottom of trenches; and a depletion suppressing layer of the first conductivity type provided between adjacent trench-bottom protecting layers, wherein the depletion suppressing layer includes an intermediate point that is horizontally equidistant to the adjacent trench-bottom protecting layers and is formed of a size to contact neither the trenches nor the trench-bottom protecting layers, and an impurity concentration of the depletion suppressing layer is set higher than an impurity concentration of the semiconductor layer.

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Номер записи: 39
20-08-2015 дата публикации

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20150236119A1
Автор: Hino Shiro, Imaizumi Masayuki, Kagawa Yasuhiro, Miura Naruhisa, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A silicon-carbide semiconductor device that relaxes field intensity in a gate insulating film, and that has a low ON-resistance. The silicon-carbide semiconductor device includes: an n-type silicon-carbide substrate; a drift layer formed on a topside of the n-type silicon-carbide substrate; a trench formed in the drift layer and that includes therein a gate insulating film and a gate electrode; a p-type high-concentration well region formed parallel to the trench with a spacing therefrom and that has a depth larger than that of the trench; and a p-type body region formed to have a depth that gradually increases when nearing from a position upward from the bottom end of the trench by approximately the thickness of the gate insulating film at the bottom of the trench toward the lower end of the p-type high-concentration well region. 115-. (canceled)16. A manufacturing method of a silicon-carbide semiconductor device , the method comprising:a step of forming a drift layer made of silicon carbide of a first conductivity-type on a silicon-carbide semiconductor substrate of a first conductivity-type by an epitaxial growth method;a step of forming a trench on a surface of the drift layer;a step of forming a high-concentration well region of a second conductivity-type with a predetermined spacing from the trench by ion implantation so that the high-concentration well region has a depth larger than that of the trench; anda step of embedding the trench with an embedding material, wherein a step of performing oblique ion implantation through the trench embedded with the embedded material to form the body region of the second conductivity-type such that the body region has a depth that increases as the bottom end of the high-concentration well region of the second conductivity-type is approached from a position upward from the bottom of the trench, and', 'a step of dissolving and removing the embedded material after having formed the body region., 'the step of forming the body ...

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Номер записи: 40
30-08-2018 дата публикации

Semiconductor device

Номер: US20180248008A1
Автор: Katsutoshi Sugawara, Kazuya Konishi, Kohei Adachi, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

A semiconductor device in which an interlayer insulation film covers striped gate electrodes with a thickness larger than a thickness of a gate oxide film. The interlayer insulation film includes first contact holes outside each striped trench, and second contact holes inside the striped trench. In a plan view, striped active regions and striped contact regions both extending in a longitudinal direction exist. The striped active regions and the striped contact regions are alternately and repeatedly disposed in a direction perpendicular to the longitudinal direction. In each of the striped active regions, the source electrode is connected to a source region through the first contact hole. In each of the striped contact regions, the source electrode is connected to a protective diffusion layer through the second contact hole.

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Номер записи: 41
21-09-2017 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20170271323A1
Автор: Fukui Yutaka, Kagawa Yasuhiro, SUGAWARA Katsutoshi, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A semiconductor device includes a base region of second conductivity type formed on a drift layer of first conductivity type, a source region of first conductivity type located in the base region, a trench passing through the base region and the source region and dividing cell regions in plan view, a protective diffusion layer of second conductivity type disposed on a bottom of the trench, a gate electrode embedded in the trench with a gate insulating film therebetween, a source electrode electrically connected to the source region, and a protective contact region disposed at each of positions of three or more cell regions and connecting the protective diffusion layer and the source electrode to each other. The protective contact regions are disposed such that a triangle whose vertices are centers of three protective contact regions located closest to one another is an acute triangle.

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Номер записи: 42
08-10-2015 дата публикации

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Номер: US20150287789A1
Автор: FUJIWARA Nobuo, Fukui Yutaka, Kagawa Yasuhiro, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A silicon carbide semiconductor device includes trenches formed in a lattice shape on the surface of a silicon carbide substrate on which a semiconductor layer is formed, and gate electrodes formed inside of the trenches via a gate insulating film. The depth of the trenches is smaller in a portion where the trenches are crossingly formed than in a portion where the trenches are formed in parallel to each other. Consequently, the silicon carbide semiconductor device is obtained that increases a withstand voltage between the gate electrodes and corresponding drain electrodes on the semiconductor device rear surface to prevent dielectric breakdown and, at the same time, has a large area of the gate electrodes, high channel density per unit area, and low ON resistance. 1. A silicon carbide semiconductor device comprising:trenches formed in a lattice shape on a surface of a silicon carbide substrate on which a semiconductor layer is formed; andgate electrodes formed inside of the trenches via an insulating film, whereinthe gate electrodes formed inside of the trenches are connected in a lattice form within the trenches, andin the silicon carbide substrate, a plurality of electric contact regions, which are formed in a distributed manner in a region different from the region in which the gate electrodes are formed, are provided for inputting signals to the gate electrodes,the depth of the trenches is smaller in a portion where the trenches are crossingly formed than in a portion where the trenches are formed in parallel to each other.2. The silicon carbide semiconductor device according to claim 1 , wherein depth of the portion where the trenches are crossingly formed is in a range between 40% or larger and 80% or smaller of depth of the portion where the trenches are formed in parallel to each other.3. The silicon carbide semiconductor device according to claim 1 , wherein an aspect ratio claim 1 , which is a value obtained by dividing the depth of the trenches by width ...

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Номер записи: 43
19-10-2017 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20170301788A1
Автор: FUJIWARA Nobuo, Fukui Yutaka, Kagawa Yasuhiro, SUGAWARA Katsutoshi, TAGUCHI Kensuke, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A trench-gate semiconductor device including an outside trench, increases reliability of an insulating film at a corner of an open end of the outside trench. The semiconductor device includes: a gate trench reaching an inner part of an n-type drift layer in a cell region; an outside trench outside the cell region; a gate electrode formed inside the gate trench through a gate insulating film; a gate line formed inside the outside trench through an insulating film; and a gate line leading portion formed through the insulating film to cover a corner of an open end of the outside trench closer to the cell region, and electrically connecting the gate electrode to the gate line, and the surface layer of the drift layer in contact with the corner has a second impurity region of p-type that is a part of the well region. 110-. (canceled)11. A semiconductor device , comprising:a drill layer of a first conductivity type;a well region of a second conductivity type that is formed in a surface layer of said drift layer in a cell region;a first impurity region of said first conductivity type that is partially formed in a surface layer of said well region;a gate trench that pierces through said well region from a surface of said first impurity region to reach an inner part of said drift layer;an outside trench formed outside said cell region and in said drift layer;a gate electrode formed inside said gate trench through a gate insulating film;a gate line formed inside said outside trench through an insulating film; anda gate line leading portion formed through said insulating film to cover a corner of an open end of said outside trench that is closer to said cell region, said gate line leading portion electrically connecting said gate electrode to said gate line,wherein said first conductivity type is n-type, and said second conductivity type is p-type,said surface layer of said drift layer that is in con act with said corner has a second impurity region of said second conductivity ...

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Номер записи: 44
26-10-2017 дата публикации

INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: US20170309711A1
Автор: ABE Yuji, Fukui Yutaka, Imaizumi Masayuki, Kagawa Yasuhiro, Miura Naruhisa, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

An insulated gate silicon carbide semiconductor device includes: a drift layer of a first conductivity type on a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface; a first base region; a source region; a trench; a gate insulating film; a protective diffusion layer; and a second base region. The trench sidewall surface in contact with the second base region is a surface having a trench off-angle of more than 0° in a <0001> direction with respect to a plane parallel to the <0001> direction. The insulated gate silicon carbide semiconductor device can relieve an electric field of a gate insulating film and suppress an increase in on-resistance and provide a method for manufacturing the same. 1. (canceled)2: An insulated gate silicon carbide semiconductor device , comprising:a silicon carbide substrate of 4H type having a main surface having an off-angle of more than 0° in an off-direction with respect to a {0001} plane;a drift layer of a first conductivity type provided on said silicon carbide substrate;a first base region of a second conductivity type located on a surface side of said drift layer;a source region of the first conductivity type located in said first base region;a trench that penetrates said first base region and said source region and has a plurality of trench sidewall surfaces;a gate insulating film formed in said trench;a gate electrode buried in said trench through said gate insulating film;a protective diffusion layer of the second conductivity type provided in said drift layer while being in contact with a bottom of said trench; anda second base region of the second conductivity type provided in said drift layer while being in contact with said protective diffusion layer, said first base region, and at least part of at least one of said plurality of trench sidewall surfaces, said second base region having a bottom surface whose depth is shallower than or equal to a bottom surface of said ...

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Номер записи: 45
19-11-2015 дата публикации

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Номер: US20150333126A1
Автор: ABE Yuji, Fukui Yutaka, Imaizumi Masayuki, Kagawa Yasuhiro, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

It is an object of the present invention to provide a silicon carbide semiconductor device that reduces an influence of an off-angle of a silicon carbide substrate on characteristics of the semiconductor device and achieves improved operational stability and reduced resistance. In a trench-gate silicon carbide MOSFET semiconductor device formed on the silicon carbide semiconductor substrate having the off-angle, a low-channel doped region is provided on a first sidewall surface side of the trench in a well region, and a high-channel doped region having an effective acceptor concentration lower than that of the low-channel doped region is provided on a second sidewall surface side of the trench in the well region.

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Номер записи: 46
17-11-2016 дата публикации

Silicon carbide semiconductor device

Номер: US20160336391A1
Автор: Naruhisa Miura, Rina Tanaka, Yasuhiro Kagawa, Yuji Ebiike
Принадлежит: Mitsubishi Electric Corp

A silicon carbide semiconductor device includes: a drift layer of a first conductivity type made of silicon carbide; a well region of a second conductivity type formed on the drift layer; a source region of a first conductivity type formed on the well region; a gate insulating film formed on an inner wall of a trench extending from a front surface of the source region through the well region, at least a part of a side surface of the gate insulating film being in contact with the drift layer; a gate electrode formed in the trench with the gate insulating film therebetween; a protective layer of the second conductivity type formed in the drift layer; and a depletion suppressing layer of the first conductivity type formed in the drift layer so as to be in contact with a side surface of the protective layer.

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Номер записи: 47
10-12-2015 дата публикации

INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: US20150357415A1
Автор: ABE Yuji, Fukui Yutaka, Imaizumi Masayuki, Kagawa Yasuhiro, Miura Naruhisa, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

An insulated gate silicon carbide semiconductor device includes: a drift layer of a first conductivity type on a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface; a first base region; a source region; a trench; a gate insulating film; a protective diffusion layer; and a second base region. The trench sidewall surface in contact with the second base region is a surface having a trench off-angle of more than 0° in a <0001> direction with respect to a plane parallel to the <0001> direction. The insulated gate silicon carbide semiconductor device can relieve an electric field of a gate insulating film and suppress an increase in on-resistance and provide a method for manufacturing the same. 1. An insulated gate silicon carbide semiconductor device , comprising:a silicon carbide substrate of 4H type with a {0001} plane having an off-angle of more than 0° as a main surface;a drift layer of a first conductivity type provided on said silicon carbide substrate;a first base region of a second conductivity type located on a surface side of said drift layer;a source region of the first conductivity type located in said first base region;a trench that penetrates said first base region and said source region and has a trench side wall formed of a plurality of surfaces;a gate insulating film formed on said trench side wall in said trench;a gate electrode buried in said trench through said gate insulating film;a protective diffusion layer of the second conductivity type provided in said drift layer while being in contact with a bottom of said trench; anda second base region of the second conductivity type provided in said drift layer while being in contact with part of said protective diffusion layer, part of said first base region, and at least part of one surface of said plurality of surfaces of said trench side wall,wherein said one surface of said trench side wall in contact with said second base region is a surface ...

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Номер записи: 48
22-10-2020 дата публикации

CELLULOSE FIBER-CONTAINING COMPOSITION AND PAINT

Номер: US20200332143A1
Автор: AIZAWA Emi, FUSHIMI Hayato, TANAKA Rina, Yamamoto Hiroki, YAMANE Kazuo
Принадлежит: OJI HOLDINGS CORPORATION

It is an object of the present invention to provide a cellulose fiber-containing composition and a cellulose fiber-containing paint, the particles (aggregates) of which are suppressed in coated products. According to the present invention, provided is a cellulose fiber-containing composition comprising cellulose fibers having a fiber width of 1000 nm or less and water, wherein the image clarity (comb width: 0.125 mm) of a coating film obtained from the following conditions is 55% or more: 2. The cellulose fiber-containing composition according to claim 1 , wherein the image clarity is 65% or more and 98% or less.3. The cellulose fiber-containing composition according to claim 1 , wherein the total amount of the cellulose fibers and the water is 90% by mass or more based on the amount of the entire composition.4. The cellulose fiber-containing composition according to claim 1 , wherein when the solid concentration of the cellulose fibers is set at 0.4% by mass claim 1 , the viscosity measured under conditions of 23° C. and a rotation number of 3 rpm is 40 claim 1 ,000 mPa·s or less.7. The cellulose fiber-containing composition according to claim 1 , further comprising an enzyme.8. The cellulose fiber-containing composition according to claim 1 , which is for use in a paint.9. The cellulose fiber-containing composition according to claim 1 , which is for use in a thickener.10. A paint comprising the cellulose fiber-containing composition according to . The present invention relates to a cellulose fiber-containing composition and a cellulose fiber-containing paint.In recent years, because of enhanced awareness of alternatives to petroleum resources and environmental consciousness, there has been a focus on materials utilizing reproducible natural fibers. Among natural fibers, cellulose fibers having a fiber diameter of 10 μm or more and 50 μm or less, in particular, wood-derived cellulose fibers (pulp) have been widely used mainly as paper products so far.Ultrafine ...

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Номер записи: 49
13-12-2018 дата публикации

SILICON CARBIDE SEMICONDUCTOR DEVICE

Номер: US20180358429A1
Автор: Fukui Yutaka, Kagawa Yasuhiro, Kuroiwa Takeharu, SUGAWARA Katsutoshi, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A silicon carbide semiconductor device includes a silicon carbide drift layer formed on an upper surface of a silicon carbide semiconductor substrate having an off angle, a body region, a source region, a plurality of trenches, a gate insulating film, a gate electrode, a source electrode, a drain electrode, and a depletion suppressing layer. The depletion suppressing layer is positioned to be sandwiched between the plurality of trenches in a plan view, and in a direction with the off angle of the silicon carbide semiconductor substrate, a distance between the depletion suppressing layer and one of the trenches adjacent to the depletion suppressing layer is different from another distance between the depletion suppressing layer and the other one of the trenches adjacent to the depletion suppressing layer. 113-. (canceled)14. A silicon carbide semiconductor device , comprising:a silicon carbide drift layer of a first conductivity type formed on an upper surface of a silicon carbide semiconductor substrate having an off angle;a body region of a second conductivity type formed on an upper surface of the silicon carbide drift layer;a source region of the first conductivity type which is partially formed on a surface layer of the body region;a plurality of trenches penetrating the body region from an upper surface of the source region, to reach the silicon carbide drift layer;a gate insulating film formed on a wall surface inside each of the plurality of trenches;a gate electrode formed inside each of the plurality of trenches to cover the gate insulating film;a source electrode formed to cover the source region;a drain electrode formed on a lower surface side of the silicon carbide drift layer; anda depletion suppressing layer of the first conductivity type formed on a lower surface of the body region and having an impurity concentration higher than that of the silicon carbide drift layer,wherein the depletion suppressing layer is positioned to be sandwiched between the ...

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Номер записи: 50
13-12-2018 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: US20180358431A1
Автор: Fukui Yutaka, Kagawa Yasuhiro, SUGAWARA Katsutoshi, TANAKA Rina
Принадлежит: Mitsubishi Electric Corporation

A protective diffusion region includes a first protective diffusion region at a location closest to a termination region, and a second protective diffusion region located away from the first protective diffusion region with a first space therebetween. A second space that is a distance between a termination diffusion region and the first protective diffusion region is greater than the first space. A current diffusion layer of a first conductivity type includes a first current diffusion layer located between the first protective diffusion region and the second protective diffusion region and having a higher impurity concentration than a drift layer, and a second current diffusion layer located between the first protective diffusion region and the termination diffusion region. The second current diffusion layer includes a region having a lower impurity concentration than the current diffusion layer. 1. A power semiconductor device comprising:a drift layer of a first conductivity type made from a wide bandgap semiconductor;a base region of a second conductivity type formed over said drift layer in an element region;a source region of said first conductivity type formed on said base region;a gate insulating film formed on a side face and a bottom face of an element trench, said element trench penetrating said base region and said source region to reach said drift layer;a gate electrode formed inside said element trench with said gate insulating film therebetween;a protective diffusion region of said second conductivity type formed at a deeper location in said drift layer than said element trench in said element region;a current diffusion layer of said first conductivity type formed under said base region;a gate extraction electrode formed, in a termination region surrounding said element region, in a termination trench with an insulating film therebetween, and electrically connected to said gate electrode, said termination trench having a side face being in contact with ...

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Номер записи: 51
27-10-2022 дата публикации

SILICON CARBIDE SEMICONDUCTOR

Номер: DE112015007172B4
Автор: Katsutoshi Sugawara, Naruhisa Miura, Rina Tanaka, Yasuhiro Kagawa
Принадлежит: Mitsubishi Electric Corp

Siliciumcarbid-Halbleitereinheit (91 bis 93), die Folgendes aufweist:- ein Siliciumcarbid-Einkristall-Substrat (1);- eine Driftschicht (2), die an dem Siliciumcarbid-Einkristall-Substrat (1) angeordnet ist, das aus Siliciumcarbid besteht, und die einen ersten Leitfähigkeitstyp und eine erste Störstellenkonzentration aufweist;- einen Körperbereich (5), der an der Driftschicht (2) angeordnet ist und einen zweiten Leitfähigkeitstyp aufweist, der sich von dem ersten Leitfähigkeitstyp unterscheidet;- einen Source-Bereich (3), der an dem Körperbereich (5) angeordnet ist und den ersten Leitfähigkeitstyp aufweist;- eine Source-Elektrode (11), die mit dem Source-Bereich (3) elektrisch verbunden ist,- eine Gate-Isolierschicht (9) in jedem von einem ersten Zellenbereich (CL1) und einem zweiten Zellenbereich (CL2), die einen Graben (7) bedeckt, der den Source-Bereich (3) und den Körperbereich (5) durchdringt und bis zu der Driftschicht (2) reicht;- eine Gate-Elektrode (10), die in dem Graben (7) angeordnet ist;- eine Grabenbodenflächen-Schutzschicht (8), die in der Driftschicht (2) in einer Schnittansicht an einer Position tiefer als der Körperbereich (5) angeordnet ist und den zweiten Leitfähigkeitstyp aufweist;- eine Schutzschicht-Masseelektrode (15), die so konfiguriert ist, dass sie die Source-Elektrode (11) mit der Grabenbodenflächen-Schutzschicht (8) elektrisch verbindet;- eine Schicht (6) mit einer hohen Konzentration, die zwischen der Driftschicht (2) und dem Körperbereich (5) in dem ersten Zellenbereich (CL1) angeordnet ist und den ersten Leitfähigkeitstyp und eine zweite Störstellenkonzentration aufweist, die höher als die erste Störstellenkonzentration ist,- eine Strombegrenzungsschicht (14), die zwischen der Driftschicht (2) und dem Körperbereich (5) in dem zweiten Zellenbereich (CL2) angeordnet ist und den ersten Leitfähigkeitstyp und eine dritte Störstellenkonzentration aufweist, die höher als die erste Störstellenkonzentration und geringer als die zweite Stö ...

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Номер записи: 52
21-12-2017 дата публикации

SILICON CARBIDE SEMICONDUCTOR UNIT AND METHOD OF MANUFACTURING THE SAME

Номер: DE112015006403T5
Автор: Katsutoshi Sugawara, Naruhisa Miura, Rina Tanaka, Yashuhiro Kagawa
Принадлежит: Mitsubishi Electric Corp

Eine Drift-Schicht (2) eines ersten Leitfähigkeitstyps ist aus Siliciumcarbid hergestellt. Eine Korpus-Bereich (5) eines zweiten Leitfähigkeitstyps ist auf der Drift-Schicht (2) angeordnet. Ein Source-Bereich (3) des ersten Leifähigkeitstyps ist auf dem Korpus-Bereich (5) angeordnet. Eine Source-Elektrode (11) ist mit dem Source-Bereich (3) verbunden. Eine das Gate isolierende Schicht (9) ist auf einer seitlichen Oberfläche und einer unteren Oberfläche eines Grabens (6) angeordnet, der den Korpus-Bereich (5) und den Source-Bereich (3) durchdringt. Eine Gate-Elektrode (10) ist in dem Graben (6) angeordnet, wobei die das Gate isolierende Schicht (9) dazwischen eingefügt ist. Eine Schutzschicht (15) der Grabenbodenfläche des zweiten Leitfähigkeitstyps ist unterhalb der Bodenfläche des Grabens (6) in der Drift-Schicht (2) angeordnet und ist mit der Source-Elektrode (11) elektrisch verbunden. Die Schutzschicht (15) der Grabenbodenfläche weist eine Schutzschicht (8) mit einer hohen Konzentration und eine erste Schutzschicht (7) mit einer geringen Konzentration auf, die unterhalb der Schutzschicht (8) mit einer hohen Konzentration angeordnet ist und eine Störstellenkonzentration aufweist, die geringer als jene der Schutzschicht (8) mit einer hohen Konzentration ist.

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Номер записи: 53
02-02-2022 дата публикации

Building and building construction method

Номер: JP2022020967A
Автор: Atsuchika Hanai, Kazutomi Nakane, Nobuyuki Ozawa, Rina Tanaka, 一臣 中根, 厚周 花井, 宣行 小澤, 里奈 田中
Принадлежит: Takenaka Komuten Co Ltd

【課題】鉄骨梁に直接耐火被覆を形成せずに工期を短縮する。【解決手段】建物は、鉄骨梁（梁２４）と、鉄骨梁の上下にそれぞれ配置された木製の壁材３２と、壁材３２の表面を被覆する壁耐火層３４と、複数の小梁４２と、複数の小梁４２の下方全面を被覆するとともに、壁耐火層３４に突き付けられた状態で配置された天井耐火層４６と、を有し、鉄骨梁に固定された天井ユニット４０と、複数の小梁４２の上方に架設された木製の床材５２と、床材５２の上面を被覆するとともに、壁耐火層３４に突き付けられた状態で又は壁耐火層３４が突き付けられた状態で配置された床耐火層５４と、を備えている。【選択図】図１

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Номер записи: 54
09-04-2015 дата публикации

Semiconductor device

Номер: DE112013003692T5
Автор: c/o Mitsubishi Electric Corpor Imaizumi Masayuki, c/o Mitsubishi Electric Corpora Furukawa Akihiko, c/o Mitsubishi Electric Corporatio Abe Yuji, c/o Mitsubishi Electric Corporatio Tanaka Rina
Принадлежит: Mitsubishi Electric Corp

Bei einer JBS-Diode, die einen Halbleiter mit großer Bandlücke verwendet, weist der Halbleiter mit großer Bandlücke eine hohe eingebaute Spannung auf, die gelegentlich zu Schwierigkeiten beim Einschalten des pn-Diodenbereichs führt, so dass sich ein Problem dahingehend ergibt, dass keine ausreichende Widerstandsfähigkeit gegen Stromstöße gewährleistet ist. Zum Lösen dieses Problems ist bei einer JBS-Diode mit großer Bandlücke ein pn-Übergang der pn-Diode von der Schottky-Elektrode abgelegen gebildet, und Wannenbereiche sind derart gebildet, dass sie in einem von der Schottky-Elektrode entfernt gelegenen Bereich eine geringere Breite aufweisen. In a JBS diode using a wide bandgap semiconductor, the wide bandgap semiconductor has a high built-in voltage, which sometimes results in difficulty in turning on the pn diode region, so that there is a problem that there is insufficient resistance is guaranteed against power surges. To solve this problem, in a JBS diode having a large bandgap, a pn junction of the pn diode is formed remotely from the Schottky electrode, and well regions are formed to have a smaller width in a region remote from the Schottky electrode exhibit.

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Номер записи: 55
17-01-2019 дата публикации

Insulating layer silicon carbide semiconductor device and process for its production

Номер: DE112014000679B4
Автор: Masayuki Imaizumi, Naruhisa Miura, Rina Tanaka, Yasuhiro Kagawa, Yuji Abe, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Isolierschichtsiliciumcarbidhalbleiterbauteil, Folgendes aufweisend:ein Siliciumcarbidsubstrat (1) eines 4H-Typs mit einer {0001}-Ebene als Hauptfläche, die einen Versatzwinkel von mehr als 0° hat,eine Driftschicht (2a) eines ersten Leitfähigkeitstyps, die auf dem Siliciumcarbidsubstrat (1) vorgesehen ist;eine erste Basiszone (3) eines zweiten Leitfähigkeitstyps, die sich auf einer Flächenseite der Driftschicht (2a) befindet;eine Source-Zone (4) des ersten Leitfähigkeitstyps, die sich in der ersten Basiszone (3) befindet;einen Graben (5), der die erste Basiszone (3) und die Source-Zone (4) durchdringt und eine Grabenseitenwand hat, die aus mehreren Flächen besteht;eine Gate-Isolierbeschichtung (6), die auf der Grabenseitenwand im Graben (5) ausgebildet ist;eine Gate-Elektrode (7), die durch die Gate-Isolierbeschichtung (6) hindurch im Graben (5) eingebettet ist;eine Diffusionsschutzschicht (13) des zweiten Leitfähigkeitstyps, die in der Driftschicht (2a) vorgesehen und dabei in Kontakt mit einem Boden des Grabens (5) ist; undeine zweite Basiszone (14) des zweiten Leitfähigkeitstyps, die in der Driftschicht (2a) vorgesehen und dabei in Kontakt mit einem Teil der Diffusionsschutzschicht (13), einem Teil der ersten Basiszone (3) und mindestens einem Teil einer Fläche der mehreren Flächen der Grabenseitenwand ist,wobei die eine Fläche der Grabenseitenwand, die mit der zweiten Basiszone (14) in Kontakt ist, eine Fläche mit einem Grabenversatzwinkel von mehr als 0° in einer <0001>-Richtung in Bezug auf eine zur <0001>-Richtung parallele Ebene ist. An insulating layer silicon carbide semiconductor device, comprising: a 4H-type silicon carbide substrate (1) having a {0001} plane as a major surface having an offset angle of more than 0 °, a drift layer (2a) of a first conductivity type being formed on the silicon carbide substrate (1) a first base region (3) of a second conductivity type located on an area side of the drift layer (2a); a source region (4) of the ...

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Номер записи: 56
24-10-2019 дата публикации

Retort pouch

Номер: JP2019182459A
Автор: Rina Tanaka, 里奈 田中
Принадлежит: Toppan Printing Co Ltd

【課題】パウチ内部の汁だけを分離して排出し、その後、固形具材を別に取り出し可能なレトルトパウチを得る。【解決手段】前フィルム（２）と後フィルム（３）とのシーラント面を向かい合わせ、少なくとも周囲に天シール部（１１）と、天シール部端部から垂下する側シール部と、を有するパウチであって、天シール部の内側に、天シール部に平行な第１易開封線（１５）と、前記第１易開封線の内側に、第１易開封線に平行な、断続非シール部と断続シール部とが交互に形成された断続的シール部（１８）とを有し、左右の側シール部より内側に、第１易開封線に垂直な第２易開封線（１６）を有していることを特徴とするレトルトパウチ。【選択図】図１

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Номер записи: 57
13-07-2023 дата публикации

METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE, SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

Номер: DE112020007652T5
Автор: Hideyuki HATTA, Motoru YOSHIDA, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Ein Verfahren zur Herstellung einer Siliciumcarbid-Halbleitereinheit weist Folgendes auf: einen Schritt, bei dem ein Gate-Graben gebildet wird, einen Schritt, bei dem ein Schottky-Graben gebildet wird, einen Schritt, bei dem eine Siliciumoxid-Schicht (51) in dem Gate-Graben und dem Schottky-Graben gebildet wird, einen Schritt, bei dem eine polykristalline Silicium-Schicht (61) innenliegend in Bezug auf die Siliciumoxid-Schicht gebildet wird, einen Schritt, bei dem die polykristalline Silicium-Schicht (61) zurückgeätzt wird, einen Schritt, bei dem eine Zwischenisolierschicht (55) auf einer Gate-Elektrode (60) in dem Gate-Graben gebildet wird, einen Schritt, bei dem die polykristalline Silicium-Schicht (61) in dem Schottky-Graben nach dem Öffnen eines Lochs in der Zwischenisolierschicht (55) mittels eines Nassätzvorgangs entfernt wird, einen Schritt, bei dem eine ohmsche Elektrode (70) auf einem Source-Bereich (40) gebildet wird, einen Schritt, bei dem die Siliciumoxid-Schicht (51) in dem Schottky-Graben entfernt wird, und einen Schritt, bei dem eine Source-Elektrode (80) in dem Schottky-Graben gebildet wird, die einen Schottky-Übergang mit einer Drift-Schicht (20) bildet. A method for manufacturing a silicon carbide semiconductor device comprises: a step of forming a gate trench, a step of forming a Schottky trench, a step of forming a silicon oxide layer (51) in the gate trench and the Schottky trench, a step in which a polycrystalline silicon layer (61) is formed internally with respect to the silicon oxide layer, a step in which the polycrystalline silicon layer (61) is etched back a step of forming an interlayer insulating layer (55) on a gate electrode (60) in the gate trench, a step of cutting the polycrystalline silicon layer (61) in the Schottky trench after opening a hole in the interlayer insulating film (55) is removed by wet etching, a step of forming an ohmic electrode (70) on a source region (40), a step of forming the silicon oxide film (51) in the ...

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Номер записи: 58
10-01-2019 дата публикации

Semiconductor device and power conversion device

Номер: DE112017002221T5
Автор: Katsutoshi Sugawara, Kazuya Konishi, Kohei Adachi, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Die vorliegende Erfindung betrifft ein Halbleiterbauelement mit einem Graben-Gate, wobei das Halbleiterbauelement Folgendes aufweist: eine Grabenboden-Schutzschicht eines zweiten Leitfähigkeitstyps, die in einer Halbleiterschicht eines ersten Leitfähigkeitstyps ausgebildet wird, wobei sie mit einem Boden von Gräben in Kontakt steht; und eine Verarmungs-Unterdrückungsschicht des ersten Leitfähigkeitstyps, die zwischen benachbarten Grabenboden-Schutzschichten ausgebildet ist, wobei die Verarmungs-Unterdrückungsschicht einen Zwischenpunkt besitzt, der horizontal äquidistant zu den benachbarten Grabenboden-Schutzschichten ist und in einer derartigen Größe ausgebildet ist, dass sie weder die Gräben noch die Grabenboden-Schutzschichten berührt, wobei eine Verunreinigungskonzentration der Verarmungs-Unterdrückungsschicht höher vorgegeben ist als eine Verunreinigungskonzentration der Halbleiterschicht. The present invention relates to a trench gate semiconductor device, the semiconductor device comprising: a trench bottom protection layer of a second conductivity type formed in a semiconductor layer of a first conductivity type while being in contact with a bottom of trenches; and a depletion-suppression layer of the first conductivity type formed between adjacent trench-bottom protection layers, wherein the depletion-suppression layer has an intermediate point that is horizontally equidistant from the adjacent trench-bottom protection layers and formed in such a size as not to form the trenches still touches the trench bottom protective layers, wherein an impurity concentration of the depletion-suppression layer is set higher than an impurity concentration of the semiconductor layer.

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Номер записи: 59
01-06-2017 дата публикации

SEMICONDUCTOR DEVICE

Номер: DE112015004374T5
Автор: Katsutoshi Sugawara, Kensuke Taguchi, Nobuo Fujiwara, Rina Tanaka, Yasuhiro Kagawa, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Die Erfindung hat das Ziel, bei einer Graben-Gate-Halbleitervorrichtung mit einem äußeren Graben die Zuverlässigkeit einer Isolierschicht an einer Ecke an einem offenen Ende des äußeren Grabens zu erhöhen. Die Halbleitervorrichtung gemäß der vorliegenden Erfindung weist Folgendes auf: einen Gate-Graben (6), der einen inneren Teil einer n-leitenden Driftschicht (3) in einem Zellenbereich (30) erreicht; einen äußeren Graben (6a) außenseitig von dem Zellenbereich; eine Gate-Elektrode (8), die durch eine Gate-Isolierschicht (7) hindurch im Inneren des Gate-Grabens (6) gebildet ist; eine Gateleitung (20), die durch eine Isolierschicht (22) hindurch im Inneren des äußeren Grabens (6a) gebildet ist; und einen Gateleitungs-Führungsbereich (14), der durch die Isolierschicht (22) hindurch derart gebildet ist, dass er eine näher bei dem Zellenbereich befindliche Ecke an einem offenen Ende des äußeren Grabens (6a) bedeckt und die Gate-Elektrode (8) mit der Gateleitung elektrisch verbindet, wobei die mit der Ecke in Kontakt stehende Oberfläche der Driftschicht einen zweiten, p-leitenden Dotierstoffbereich aufweist, der Bestandteil des Wannenbereichs ist. The invention aims to increase the reliability of an insulating layer at a corner at an open end of the outer trench in a trench-gate semiconductor device having an outer trench. The semiconductor device according to the present invention comprises: a gate trench (6) reaching an inner part of an n-type drift layer (3) in a cell region (30); an outer trench (6a) on the outside of the cell area; a gate electrode (8) formed through a gate insulating layer (7) inside the gate trench (6); a gate line (20) formed through an insulating layer (22) inside the outer trench (6a); and a gate line guide portion (14) formed through the insulating layer (22) so as to cover a corner nearer to the cell area at an open end of the outer trench (6a) and the gate electrode (8) electrically connects the gate line, wherein the surface of the drift ...

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Номер записи: 60
22-12-2022 дата публикации

Silicon carbide semiconductor device, power conversion apparatus, and method for manufacturing silicon carbide semiconductor

Номер: US20220406897A1
Автор: Hideyuki HATTA, Kohei Adachi, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

A silicon carbide semiconductor device includes: a body region of a second conductivity type provided on a drift layer of a first conductivity type; a source region of a first conductivity type provided on the body region; a source electrode connected to the source region; a gate insulating film provided on an inner surface of a trench; a gate electrode provided inside the trench with interposition of the gate insulating film; a protective layer of a second conductivity type provided below the gate insulating film; a connection layer of a second conductivity type being in contact with the protective layer and the body region; and an electric field relaxation layer of a second conductivity type being in contact with a bottom surface of the connection layer, provided below the connection layer, and having a lower impurity concentration of a second conductivity type than the connection layer.

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Номер записи: 61
08-09-2022 дата публикации

Siliciumcarbid-halbleitereinheit, leitungswandlungsvorrichtung und verfahren zum herstellen einer siliciumcarbid-halbleitereinheit

Номер: DE112019007917T5
Автор: Hideyuki HATTA, Kohei Adachi, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Es wird eine Siliciumcarbid-Halbleitereinheit angegeben, die eine hohe Stehspannung aufweist und durch die der EIN-Widerstand reduziert werden kann. Eine Siliciumcarbid-Halbleitereinheit (100) weist Folgendes auf: ein Substrat (1) mit einem ersten Leitfähigkeitstyp; eine aus Siliciumcarbid bestehende Drift-Schicht (2) mit einem ersten Leitfähigkeitstyp, die auf dem Substrat (1) angeordnet ist; einen Körperbereich (3) mit einem zweiten Leitfähigkeitstyp, der auf der Drift-Schicht (2) angeordnet ist; einen Source-Bereich (5) mit einem ersten Leitfähigkeitstyp, der auf dem Körperbereich (3) angeordnet ist; eine Source-Elektrode (12), die mit dem Source-Bereich (5) verbunden ist, eine Gate-Isolierschicht (10), die auf einer inneren Oberfläche eines Grabens (6) angeordnet ist; eine Gate-Elektrode (11), die im Inneren des Grabens (6) angeordnet ist, wobei die Gate-Isolierschicht (10) dazwischen eingefügt ist; eine Schutzschicht (7) mit einem zweiten Leitfähigkeitstyp, die unterhalb der Gate-Isolierschicht (10) angeordnet ist; eine Verbindungsschicht (8) mit einem zweiten Leitfähigkeitstyp, die sich in Kontakt mit der Schutzschicht (7) und dem Körperbereich (3) befindet; sowie eine Relaxationsschicht (9) für das elektrische Feld mit einem zweiten Leitfähigkeitstyp, die sich in Kontakt mit einer unteren Oberfläche der Verbindungsschicht (8) befindet, unterhalb der Verbindungsschicht (8) angeordnet ist und eine geringere Konzentration von Störstellen mit einem zweiten Leitfähigkeitstyp aufweist als die Verbindungschicht (8).

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Номер записи: 62
30-12-2021 дата публикации

Siliciumcarbid-halbleitereinheit und leistungswandler

Номер: DE112019007048T5
Автор: Hideyuki HATTA, Katsutoshi Sugawara, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Die vorliegende Erfindung bezieht sich auf eine Siliciumcarbid-Halbleitereinheit, die eine Schottky-Barrieren-Diode in einem Feldeffekttransistor aufweist und Folgendes aufweist: einen ersten Graben, der in einer Dickenrichtung durch einen ersten und einen zweiten Halbleiterbereich hindurch angeordnet ist und eine Bodenfläche aufweist, die bis ins Innere einer Halbleiterschicht reicht; einen zweiten Graben, der in der Dickenrichtung durch den zweiten Halbleiterbereich hindurch angeordnet ist und eine Bodenfläche aufweist, die bis ins Innere der Halbleiterschicht reicht, eine Gate-Elektrode, die über eine Gate-Isolierschicht in dem ersten Graben eingebettet ist, eine Schottky-Barrieren-Diode, die in dem zweiten Graben eingebettet ist, eine erste niederohmige Schicht, die sich in Kontakt mit einer Grabenseitenwand des ersten Grabens befindet, sowie eine zweite niederohmige Schicht, die sich in Kontakt mit einer Grabenseitenwand des zweiten Grabens befindet. Die zweite niederohmige Schicht weist eine Störstellenkonzentration auf, die höher als die Störstellenkonzentration in der Halbleiterschicht ist und geringer als die Störstellenkonzentration in der ersten niederohmigen Schicht ist.

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Номер записи: 63
28-05-2020 дата публикации

スタンディングパウチ

Номер: JP2020079094A
Автор: Rina Tanaka, 里奈 田中
Принадлежит: Toppan Printing Co Ltd

【課題】側面にもガゼットがあって、横に立てることができて、底フィルムが開きやすく、容易に自立可能なスタンディングパウチを得る。【解決手段】前フィルム（２）と後フィルム（３）とのシーラント面を向かい合わせ、周囲に天シール部（１１）、左側シール部（１２）、右側シール部（１３）、および底部にシーラント層を表側にして折り曲げた底中間フィルム（４）を有するガゼットの底シール部（１４）と、上記天シール部と左側シール部、あるいは天シール部と右側シール部との境に注出可能な口栓（５）を有するスタンディングパウチであって、口栓を設ける反対側の側シール部に並行して、前フィルムと後フィルムにそれぞれ、１８０度折り曲げシーラント面を向かい合わせた折り込み部を設け、側面を第２ガゼット部（１７）としたことを特徴とするスタンディングパウチ（１）。【選択図】図１

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Номер записи: 64
29-07-2022 дата публикации

コード読解支援装置、方法及びプログラム

Номер: JP2022110421A
Автор: Nobuyuki Ikeda, Rina Tanaka, Yuma Matsumoto, 信之 池田, 里奈 田中, 雄磨 松本
Принадлежит: Toshiba Corp

【課題】ソースコードの読解を支援することが可能なコード読解支援装置、方法及びプログラムを提供することにある。【解決手段】実施形態に係るコード読解支援装置は、特定手段、保持手段、取得手段及び出力処理手段を具備する。特定手段は、第１ユーザが調査した関数を示す関数情報を特定する。保持手段は、特定された関数情報を保持する。取得手段は、第２ユーザがソースコードを読解する場合に、第１ユーザが調査した関数毎の頻度を示す頻度情報を取得する。出力処理手段は、取得された頻度情報を出力する。ソースコードは、複数の機能を実現するように記述されている。保持手段は、複数の機能のうち第１ユーザによって指定された機能に対応づけて関数情報を保持する。取得手段は、第２ユーザによって指定された機能に対応づけて保持手段に保持されている関数情報に基づいて、頻度情報を取得する。【選択図】図１

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Номер записи: 65
01-10-2020 дата публикации

シートおよびシートの製造方法

Номер: JP2020158927A
Автор: Norio Yamane, Rina Tanaka, 利奈 田中, 山根　教郎
Принадлежит: Oji Holdings Corp

【課題】印刷後のインク鮮明度に優れるシートおよびシート製造方法を提供する。【解決手段】紙基材および微細繊維状セルロース含有層を有し、該微細繊維状セルロース含有層が微細繊維状セルロースおよびバインダーを含有し、該微細繊維状セルロースは亜リン酸基を有し、該微細繊維状セルロース含有層側表面のＪＩＳＰ８１４２：２００５に準拠して測定される７５°鏡面光沢度が５０％以上であるシートおよびシート製造方法。【選択図】なし

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Номер записи: 66
02-04-2020 дата публикации

防災システム

Номер: JP2020052881A
Автор: Akihisa Kudo, Hideki Kawai, Kazutoshi Kawamura, Kiyotaka Matsumoto, Motohiko Fukai, Rina Tanaka, Yoshimi Nohara, 一利 河村, 彰久 工藤, 泉彦 深井, 清隆 松本, 秀規 河合
Принадлежит: Nittan Co Ltd

【課題】自衛消防活動に効果的な情報を配信することが可能な防災システムを提供する。【解決手段】サーバは、火災有と判断した際に選択される第１ボタン画像（火災断定ボタン１６２ａ）と火災無と判断した際に選択される第２ボタン画像（非火災断定ボタン１６２ｂ）と判断結果を報知する際に選択される第３ボタン画像（周知ボタン１６２ｃ）とを含む画面を表示させる情報を端末２０（特別端末。すなわち自衛消防隊長が所持する端末及び／又は防災センターに設置されている端末）に送信可能であり、前記端末２０（特別端末）は、ユーザによって第１ボタン画像が選択されている状態で第３ボタン画像が選択された場合に火災有断定情報をサーバに送信可能であり、サーバは、火災有断定情報を受信した場合には火災発生が確定したことを前記端末２０（特別端末）及び自衛消防隊長以外の者が所持する端末（一般端末）に対して通知可能である。【選択図】図７

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Номер записи: 67
13-08-2020 дата публикации

水中油型乳化剤および化粧料

Номер: JP2020121941A
Автор: Ikue SUGIYAMA, Keiko Murakoso, Misato Wada, Rina Tanaka, 利奈 田中, 敬子 村社, 美里 和田
Принадлежит: Cosmos Technical Center Co Ltd, Nikko Chemicals Co Ltd, Oji Holdings Corp

【課題】本発明は、界面活性剤を用いなくとも、安定性に優れた化粧料であって、かつ使用感に優れた化粧料を提供することを課題とする。【解決手段】本発明は、化粧料を形成するために用いられる水中油型乳化剤であって、繊維幅が１０００ｎｍ以下の繊維状セルロースを含む、水中油型乳化剤及び、該水中油型乳化剤を含む化粧料に関する。【選択図】なし

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Номер записи: 68
20-06-2024 дата публикации

Siliciumcarbid-Halbleitervorrichtung und Verfahren zum Herstellen derselben

Номер: DE112013006303B4
Автор: Masayuki Imaizumi, Rina Tanaka, Yasuhiro Kagawa, Yuji Abe, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Siliciumcarbid-Halbleitervorrichtung, die Folgendes aufweist:- einen Driftbereich (4) eines ersten Leitfähigkeitstyps, der auf einer ersten Hauptfläche (2A) eines Siliciumcarbid-Halbleitersubstrats (1) mit einem Kippwinkel gebildet ist und aus Siliciumcarbid besteht;- einen Wannenbereich (5) eines zweiten Leitfähigkeitstyps, der auf einer Oberfläche des Driftbereichs (4) gebildet ist und aus Siliciumcarbid besteht;- einen Source-Bereich (6) des ersten Leitfähigkeitstyps, der in einem Oberflächenschichtbereich des Wannenbereichs (5) selektiv gebildet ist und aus Siliciumcarbid besteht;- einen Graben (7), der den Wannenbereich (5) von einer Oberfläche des Source-Bereichs (6) durchsetzt und den Driftbereich (4) erreicht;- eine Gate-Elektrode (9), die durch eine Gate-Isolierschicht (8) hindurch im Inneren des Grabens (7) gebildet ist;- eine Source-Elektrode (11), die mit dem Wannenbereich (5) und dem Source-Bereich (6) verbunden ist;- eine Drain-Elektrode (12), die auf einer zweiten Hauptfläche (2B) gebildet ist und mit dem Siliciumcarbid-Halbleitersubstrat (1) in Kontakt steht, wobei es sich bei der zweiten Hauptfläche (2B) um eine der ersten Hauptfläche (2A) des Siliciumcarbid-Halbleitersubstrats (1) gegenüberliegende Oberfläche handelt; und- einen hochkonzentrierten Wannenbereich (13) des zweiten Leitfähigkeitstyps, der in dem Wannenbereich (5) gebildet ist und eine höhere Dotierstoffkonzentration als der Wannenbereich (5) aufweist,- wobei die Distanz von einer ersten Seitenwandfläche (18) des Grabens (7) bis zu dem hochkonzentrierten Wannenbereich (13) auf der Seite der ersten Seitenwandfläche (18) kürzer ist als die Distanz von einer zweiten Seitenwandfläche (19) des Grabens (7) bis zu dem hochkonzentrierten Wannenbereich (13) auf der Seite der zweiten Seitenwandfläche (19), wobei die zweite Seitenwandfläche (19) der ersten Seitenwandfläche (18) des Grabens (7) über die Gate-Elektrode (9) in dem Graben (7) hinweg zugewandt gegenüberliegt, und- wobei der Source- ...

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Номер записи: 69
15-12-2016 дата публикации

物品ピッキングまたは物品仕分けの誤作業防止装置

Номер: JP2016210617A
Автор: Rina Tanaka, Takeo Yamada, 多計夫 山田, 里奈 田中
Принадлежит: Tactech KK

【課題】ピッキングまたは仕分け作業の誤作業防止装置を提供する。【解決手段】円筒カムの中心軸を含む中心面と後端部側の交点から中心面と直角をなして先端部へ向かって傾斜した第一のカム斜面、第一のカム斜面と中心軸上の点を中心点とした点対称の第二のカム斜面を有した円筒カムの後端部に、軸周りの回転防止手段を備えた直線駆動手段の駆動軸の中心を円筒カムの中心と円筒体の中心とを一致させて結合して円筒体の内部に配置し、第一のカム斜面、第二のカム斜面のそれぞれと当接する先端部が球面、または回転楕円体面を有する二つのカムフォロアを円筒体の中心軸に線対称の位置に配置し、直線駆動手段によって円筒体を回動可能とした回動手段を複数の物品間口のそれぞれに装着し、円筒体に嵌合した取付部材に取り付けた保持部材で物品間口の間口閉鎖部材を保持し、直線駆動手段への駆動力の付与によって所定の物品間口の間口閉鎖部材の開閉する。【選択図】図１

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Номер записи: 70
13-06-2024 дата публикации

Siliciumcarbid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Номер: DE112013006262B4
Автор: Masayuki Imaizumi, Rina Tanaka, Yasuhiro Kagawa, Yuji Abe, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Siliciumcarbid-Halbleitervorrichtung, die Folgendes aufweist:- eine Driftregion (4) von einem ersten Leitungstyp, die auf einer ersten Hauptfläche eines Siliciumcarbid-Halbleitersubstrats (1) ausgebildet ist, das einen Fehlwinkel aufweist und aus Siliciumcarbid besteht;- einen Wannenbereich (5) von einem zweiten Leitungstyp, der auf der Oberfläche der Driftregion (4) ausgebildet ist und aus Siliciumcarbid besteht;- eine Source-Region (6) vom ersten Leitungstyp, die selektiv in einem Oberflächenschichtbereich des Wannenbereichs (5) gebildet ist und aus Siliciumcarbid besteht;- einen Graben (7), der den Wannenbereich (5) von einer Oberfläche der Source-Region (6) durchdringt und bis zu der Driftregion (4) reicht;- eine Gate-Elektrode (9), die im Graben (7) durch eine Gate-Isolierschicht (8) geformt ist;- eine Source-Elektrode (11), die mit dem Wannenbereich (5) und der Source-Region (6) verbunden ist;- eine Drain-Elektrode (12), die auf einer zweiten Hauptfläche ausgebildet ist und in Kontakt mit dem Siliciumcarbid-Halbleitersubstrat (1) steht, wobei die zweite Hauptfläche eine Oberfläche ist, die der ersten Hauptfläche des Siliciumcarbid-Halbleitersubstrats (1) gegenüberliegt; und- einen Hochkonzentrations-Wannenbereich (26) vom zweiten Leitungstyp, der in dem Wannenbereich (5) gebildet ist und eine Verunreinigungskonzentration hat, die höher als die des Wannenbereichs (5) ist, wobei in dem Wannenbereich (5) an einer ersten Seitenwandoberflächenseite (18) des Grabens (7) eine dotierte Low-Channel-Region (14) ausgebildet, und eine dotierte High-Channel-Region (13) mit einer effektiven Akzeptorkonzentration, die niedriger als die der dotierten Low-Channel-Region (14) ist, ist in dem Wannenbereich (5) an einer zweiten Seitenwandoberflächenseite (19) des Grabens ausgebildet, und wobei der Hochkonzentrations-Wannenbereich (26) in dem Wannenbereich (5) in einem Abstand von der Seitenwand des Grabens (7) angeordnet ist, der größer ist als der Abstand zwischen der Seitenwand ...

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Номер записи: 71
23-03-2017 дата публикации

虚血再灌流障害軽減用組成物

Номер: JP2017057184A
Автор: Hiroshi Date, Rina Tanaka, Toyofumi YOSHIKAWA, 洋至 伊達, 豊史 芳川
Принадлежит: Kyoto University NUC

【課題】虚血再灌流障害を効果的に軽減する組成物を提供する。 【解決手段】本発明の一実施形態に係る虚血再灌流障害軽減用組成物は、ｃ−Ａｂｌチロシンキナーゼ阻害剤を含む。前記虚血再灌流障害軽減用組成物は、固形臓器保存液であってもよい。また、前記虚血再灌流障害軽減用組成物は、固形臓器移植、血栓塞栓症、及び臓器又は組織への血流の少なくとも一部の遮断を伴う手術のいずれかにおいて患者に投与される虚血再灌流障害軽減剤であってもよい。 【選択図】図１

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Номер записи: 72
30-07-2024 дата публикации

Semiconductor device

Номер: US12051744B2
Автор: Hideyuki HATTA, Katsutoshi Sugawara, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

An object is to provide a technique capable of reducing a parasitic capacitance in a semiconductor device with high accuracy. A semiconductor device includes: a base region; a source region; a second trench passing through the base region to reach the drift layer; a second protective layer disposed in a bottom portion of the second trench; a source electrode, at least part of which is disposed in the second trench, to be electrically connected to a first protective layer, the base region, and the source region; and a source side connection layer of a second conductivity type constituting at least part of a lateral portion of the second trench and connected to the base region and the second protective layer.

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Номер записи: 73
18-11-2021 дата публикации

トラス架構

Номер: JP2021179095A
Автор: Issei Tanaka, Kenji Tanaka, Rina Tanaka, Ryo Watada, Shunji Yamamoto, Tomomi Kihara, 俊司 山本, 健嗣 田中, 壱成 田中, 智美 木原, 遼 和多田, 里奈 田中
Принадлежит: Takenaka Komuten Co Ltd

【課題】連結材に使用する材料のトータル量を抑えることが容易なトラス架構を提供すること。【解決手段】本発明のトラス架構は、上弦材１又は下弦材２の一端側から他端側に向かって複数の三角形６，８が並ぶように上弦材１及び下弦材２が複数の連結材３で連結され、上弦材１の一部を底辺５とする下向きの三角形６どうし又は下弦材２の一部を底辺７とする上向きの三角形８どうしで底辺５，７の長さが一様でないブリッジ４を有する。【選択図】図１

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Номер записи: 74
19-10-2023 дата публикации

Ｐｃ柱とｐｃスラブとの接合方法

Номер: JP2023154335A
Автор: Rina Tanaka, 里奈 田中
Принадлежит: Takenaka Komuten Co Ltd

【課題】ＰＣスラブと下階のＰＣ柱を接合した後、この接合体に上階のＰＣ柱を接合する場合と比して、工数を低減することができるＰＣ柱とＰＣスラブとの接合方法を得る。【解決手段】接合方法は、ＰＣスラブの下面の凹部に一端が開放された貫通孔に対して下階のＰＣ柱の上面から突出した柱主筋を下方から挿入して下階のＰＣ柱を設置する工程と、上階のＰＣ柱の柱脚部に配置される共にグラウトの充填を確認することができる確認孔が形成されたスリーブ管に対してＰＣスラブの上面から突出した柱主筋を下方から挿入して上階のＰＣ柱を設置する工程と、ＰＣスラブの上面と上階のＰＣ柱との間の隙間の外周部を型枠材で閉じる工程と、ＰＣスラブの下面に形成された凹部を下方から型枠で閉じ、型枠に形成された注入孔からグラウトを注入し、確認孔からグラウトが流出するまでグラウトを注入する工程と、を備える。【選択図】図６

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Номер записи: 75
24-12-2019 дата публикации

Siliciumcarbid-halbleitereinheit, leistungswandler, verfahren zur herstellung einer siliciumcarbid-halbleitereinheit und verfahren zur herstellung eines leistungswandlers

Номер: DE112018001179T5
Автор: Hideyuki HATTA, Katsutoshi Sugawara, Kohei Adachi, Rina Tanaka, Yutaka Fukui
Принадлежит: Mitsubishi Electric Corp

Eine Drift-Schicht (2) ist aus Siliciumcarbid gebildet und weist einen ersten Leitfähigkeitstyp auf. Eine Grabenboden-Schutzschicht (7) ist auf einem Bodenbereich eines Gate-Grabens (6) angeordnet und weist einen zweiten Leitfähigkeitstyp auf. Eine Verarmungsunterdrückungsschicht (8) ist zwischen einer seitlichen Oberfläche des Gate-Grabens (6) und der Drift-Schicht (2) angeordnet, erstreckt sich von einem unteren Bereich eines Body-Bereichs (5) bis zu einer Position tiefer als der Bodenbereich des Gate-Grabens (6), weist den ersten Leitfähigkeitstyp auf und weist eine Konzentration von Störstellen mit dem ersten Leitfähigkeitstyp auf, die höher als jene der Drift-Schicht (2) ist. Die Konzentration von Störstellen mit dem ersten Leitfähigkeitstyp der Verarmungsunterdrückungsschicht (8) verringert sich mit zunehmendem Abstand von der seitlichen Oberfläche des Gate-Grabens (6).

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Номер записи: 76