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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 7. Отображено 7.
06-03-2014 дата публикации

Chip resistor with outrigger heat sink

Номер: US20140060897A1

A surface mount chip resistor for increasing power handling capabilities of radio frequency (RF) circuits and for minimizing parasitic capacitance and inductance effects, the chip resistor includes a ceramic substrate having a main portion and an outrigger. A resistor element is between an input contact and an output contact on a top surface of the main portion. A ground plane attachment area is on a top surface of the outrigger. The ground plane attachment area is mounted to a ground plane of a circuit board to provide a heat pathway for dissipating heat generated by the resistor element.

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06-02-2003 дата публикации

Power sensing RF termination apparatus including temperature compensation means

Номер: US20030025488A1
Принадлежит: EMC Technology Inc

A power sensing RF termination comprising a calibration means allows the user to correct for part-to-part variation, miss match loss and output offset. The power sensing RF termination comprises a first and second temperature sensitive resistors connected at a first common junction, a switching means for connecting either an RF input or a DC power reference to the first common junction, a first switch for connecting either a DC voltage source or a first current detecting resistor to the first temperature sensitive resistor, and a second current detecting resistor connected to the second temperature sensitive resistor. A first output terminal is connected to the junction between the first switch and the first temperature sensitive resistor. A second output terminal is connected to the first common junction. A third output terminal is connected to the junction between the second temperature sensitive resistor and the second current detecting resistor. The first and second temperature sensitive resistors have substantially the same temperature coefficient of resistance; but the first temperature sensitive resistor has a positive temperature coefficient of resistance while the second temperature sensitive resistor has a negative temperature coefficient of resistance. Using the measurements of the voltages at the first, second and third output terminals, a calibration table is formed correlating the power absorbed in the first and second temperature sensitive resistors to the ratio between the voltage drop across either the first or second temperature sensitive resistor and the voltage drop across both the first and second temperature resistive resistors.

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14-08-2007 дата публикации

Voltage controlled attenuator with no intermodulation distortion

Номер: US7256664B1

A preferred embodiment of the present invention comprises at least first and second thermistors, arranged into a classical Tee, Pi, or Bridged Tee attenuator design, a heating element, a temperature sensor, and a control circuit. The thermistors have different temperature coefficients of resistance and are in close proximity to the heating element and the temperature sensor. The control circuit receives a voltage signal from the temperature sensor, compares that signal with a voltage signal specifying a desired temperature, and applies electrical energy to the heating element until receiving a signal from the temperature sensor that the temperature of the thermistors matches the desired temperature. As a result, the attenuation of the attenuator can be changed at a controlled rate by varying the temperature of the thermistors, while the impedance of the attenuator remains within acceptable levels.

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14-11-2000 дата публикации

Termination for RF circuit which senses changes in power and which is not temperature sensitive

Номер: US6147481A
Принадлежит: EMC Technology LLC

A circuit for determining power changes in an RF circuit includes first and second temperature sensitive resistors connected in parallel with an RF input terminal so as to have a common junction therewith. The first resistor has a positive temperature coefficient of resistance and the second resistor has a negative temperature coefficient of resistance. A DC input terminal is connected to one of the temperature sensitive resistors and an output terminal is connected to the common junction of the two temperature sensitive resistors. Third and fourth temperature sensitive resistors have a common junction. The third resistor has a positive temperature coefficient of resistance and the fourth resistor has a negative temperature coefficient of resistance. The DC input terminal is also connected to one of the third and fourth temperature sensitive resistors, and an output terminal is connected to the common junction of the third and fourth temperature sensitive resistors. To improve the linearity of the circuit at high powers, each of the individual temperature sensitive resistors can be replaced with a pair of temperature sensitive resistors, one having a positive temperature coefficient of resistance and the other having a negative temperature coefficient of resistance. In such circuit four output terminals are provided with each output terminal being connected to the junction between the temperature sensitive resistors of each pair.

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26-10-2006 дата публикации

Passive microwave device and method for producing the same

Номер: WO2006113318A2

The present invention provides an electrical circuit component, specifically a passive microwave device, and a method for producing the same. In one embodiment, the present invention provides an electrical circuit component, comprising: at least one patterned resistive area on a first surface of a diamond substrate, a first patterned conductive area on the first surface of the diamond substrate, and a second patterned conductive area on a second surface of the diamond substrate. The patterned resistive area may comprise a very thin film of tantalum nitride or a very thin film of tantalum nitride and a thin film of nichrome. The patterned conductive area may comprise a layer of titanium-tungsten, a layer of gold, and optionally a layer of nickel. Alternatively, the patterned conductive area may comprise a layer of chrome, a layer of copper, a layer of gold, and optionally a layer of nickel.

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08-03-2007 дата публикации

Temperature and frequency variable gain attenuator

Номер: WO2006113316A3

A temperature and frequency variable gain attenuator comprises a temperature variable attenuator and a temperature variable Filter network whose resistances changed to c generate different responses that vary over temperature and frequency. At least three different thick film thermistors are used, with two of these used on the attenuator and a third one used on the filter network. The temperature coefficients of the thermistors are different and are selected so that the attenuator and filter network attenuation change at a controlled rate with changes in temperature while the impedance of the gain equalizer remains within acceptable levels. Substantially any temperature coefficient of resistance can be created for each resistor by properly selecting and mixing different inks when forming the thick film thermistors. Furthermore, the attenuator can have either a negative temperature coefficient of attenuation or a positive temperature coefficient of attenuation.

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26-10-2006 дата публикации

Temperature and frequency variable gain attenuator

Номер: WO2006113316A2

A temperature and frequency variable gain attenuator comprises a temperature variable attenuator and a temperature variable Filter network whose resistances changed to c generate different responses that vary over temperature and frequency. At least three different thick film thermistors are used, with two of these used on the attenuator and a third one used on the filter network. The temperature coefficients of the thermistors are different and are selected so that the attenuator and filter network attenuation change at a controlled rate with changes in temperature while the impedance of the gain equalizer remains within acceptable levels. Substantially any temperature coefficient of resistance can be created for each resistor by properly selecting and mixing different inks when forming the thick film thermistors. Furthermore, the attenuator can have either a negative temperature coefficient of attenuation or a positive temperature coefficient of attenuation.

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