SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus is disclosed. The substrate processing apparatus includes: a first process unit including a plurality of first process stations configured to perform a first process in a first atmosphere; a second process unit including a plurality of second process stations configured to perform a second process in a second atmosphere different from the first atmosphere; and a transformation unit between the first process unit and the second process unit. The first process unit, the transformation unit, and the second process unit are arranged in a line. The transformation unit includes a plurality of transformation stations configured to transform an atmosphere between the first atmosphere and the second atmosphere. Thus, the efficiency of processing a substrate can be improved, and the area or length in which the substrate processing apparatus is installed can be reduced. 1. A substrate processing apparatus comprising:a first process unit comprising a plurality of first process stations configured to perform a first process in a first atmosphere;a second process unit comprising a plurality of second process stations configured to perform a second process in a second atmosphere different from the first atmosphere; anda transformation unit between the first process unit and the second process unit, the first process unit, the transformation unit, and the second process unit are arranged in a line, and', 'the transformation unit comprises a plurality of transformation stations configured to transform an atmosphere between the first atmosphere and the second atmosphere., 'wherein'}2. The substrate processing apparatus of claim 1 , wherein the transformation stations are arranged on both sides of the line.3. The substrate processing apparatus of claim 1 , wherein each of the transformation stations is configured to accommodate and process a plurality of substrates concurrently.4. The substrate processing apparatus of claim 1 , wherein a ratio of a ...

Method of making an encapsulated plasma sensitive device

A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.

Method of making an edge-sealed, encapsulated environmentally sensitive device

A method of making an edge-sealed, encapsulated environmentally sensitive device. The method includes providing an environmentally sensitive device (940) on a substrate (905); depositing a decoupling layer (945) through one mask (910), the decoupling layer adjacent to the environmentally sensitive device, the decoupling layer having a discrete area and covering the environmentally sensitive device; increasing the distance between the one mask (910) and the substrate (905); and depositing a first barrier layer (950) through the one mask (910), the first barrier layer adjacent to the decoupling layer, the first barrier layer having an area greater than the discrete area of the decoupling layer and covering the decoupling layer, the decoupling layer (945) being sealed between the edges of the first barrier layer (950) and the substrate (905) or an optional second barrier layer.

Method for edge sealing barrier films

Methods of making an edge-sealed, encapsulated environmentally sensitive device. One method includes providing an environmentally sensitive device with a contact on a substrate; depositing a decoupling layer adjacent to the environmentally sensitive device, the decoupling layer having a discrete area and covering the environmentally sensitive device and not covering the contact, the decoupling layer deposited using a printing process; depositing a first barrier layer adjacent to the decoupling layer, the first barrier layer having a first area greater than the discrete area of the decoupling layer, and the first barrier layer having a second area covering the decoupling layer and the contact, the decoupling layer being sealed between the edges of the first barrier layer and the substrate or an optional second barrier layer; and removing the second area of the first barrier layer from the contact.

Method for edge sealing barrier films

邊封且囊封之環境敏感器件及其製造方法

Method of making an encapsulated plasma sensitive device

A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.