A CHEMICAL MECHANICAL PLANARIZATION SYSTEM WITH AN ADJUSTABLE FORCE APPLYING AIR PLATEN

An adjustable platen is provided. The adjustable platen (122) includes a platen body having a top region and a bottom region. The platen body is oriented under a linear polishing pad (18) of a CMP system (100). An air bearing is integrated with the platen body at the top region, and the air bearing (124) is configured to apply an air pressure to an underside of the linear polishing pad. A set of bearings (132) are connected to the bottom region of the platen body to enable controlled vertical movement of the top region of the platen body closer or further from the underside of the linear polishing pad depending on the applied air pressure. The applied air pressure is configured to exert a controllable force to the underside of the linear polishing pad. The force is controlled to meet a desired process parameters, while the carrier (102) simply moves the wafer (12) into position over the linear polishing pad. © KIPO & WIPO 2007 ...

Oscillating chemical mechanical planarization apparatus

A chemical mechanical polishing (CMP) apparatus is provided. The CMP apparatus includes a first roller situated at a first point and a second roller situated at a second point. The first point is separate from the second point. Also included in the apparatus is a polishing pad strip having a first end secured to the first roller and a second end secured to the second roller. The first roller and the second roller are configured to reciprocate so that the polishing pad strip oscillates at least partially between the first point and the second point.

Methods for enhanced fluid delivery on bevel etch applications

An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve.

POLISHING APPARATUS AND METHODS CONTROLLING THE POLISHING PRESSURE AS A FUNCTION OF THE OVERLAPPING AREA BETWEEN THE POLISHING HEAD AND THE SEMICONDUCTOR SUBSTRATE

CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller. © KIPO & WIPO 2007 ...

OSCILLATING FIXED ABRASIVE CMP SYSTEM AND METHODS FOR IMPLEMENTING THE SAME

A chemical mechanical polishing (CMP) apparatus (200) is provided. A first roller (212a) is situated at a first point and a second roller (212b) situated at a second point, such that the first point is separate from the second point. A polishing pad strip (202) is also included and has a first end secured to the first roller and a second end secured to the second roller in a web handling arrangement. The polishing pad strip is configured to provide a surface onto which a substrate to be polished is lowered. Preferably, the polishing pad strip is a fixed abrasive pad and is configured to receive chemicals or DI water so as to facilitate a removal of material from a surface of the substrate. © KIPO & WIPO 2007 ...

CMP APPARATUS WITH AN OSCILLATING POLISHING PAD ROTATING IN THE OPPOSITE DIRECTION OF THE WAFER

A chemical mechanical polishing (CMP) system (200) is provided. A carrier (206) has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer (202) having a one or more formed layers to be prepared. A preparation head (208) is also included and is designed to be applied to at least a portion of the wafer (202) that is less than an entire portion of the surface of the wafer (202). Preferably, the preparation head (208) and the carrier (206) are configured to rotate in opposite directions. In addition, the preparation (208) head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer (202) to an edge of the wafer (202) and from the edge of the wafer (202) to the center of the wafer(202). A support head (212) to support the top face of the wafer is also included, as well as a conditioning head (210). © KIPO & WIPO 2007 ...

METHODS AND APPARATUS FOR OPTIMAL TEMPERATURE CONTROL IN A PLASMA PROCESSING SYSTEM

A temperature control device for controlling temperature of an upper chamber of a plasma processing apparatus is described. The temperature control device includes a thermally conductive body having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers in thermal communication with the thermally conductive body wherein at least one layer is a heating element; and a cooling element connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber of the plasma processing apparatus; a temperature control unit for controlling the heating element and the ...

Oscillating fixed abrasive CMP system and methods for implementing the same

A chemical mechanical polishing (CMP) apparatus is provided. A first roller is situated at a first point and a second roller situated at a second point, such that the first point is separate from the second point. A polishing pad strip is also included and has a first end secured to the first roller and a second end secured to the second roller in a web handling arrangement. The polishing pad strip is configured to provide a surface onto which a substrate to be polished is lowered. Preferably, the polishing pad strip is a fixed abrasive pad and is configured to receive chemicals or DI water so as to facilitate a removal of material from a surface of the substrate.

Chemical mechanical polishing apparatus and methods with central control of polishing pressure applied by polishing head

CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.

APPARATUS AND METHODS FOR ALIGNING A SURFACE OF AN ACTIVE RETAINER RING WITH A WAFER SURFACE FOR CHEMICAL MECHANICAL POLISHING

A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (212) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220). A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis. The retainer ring (226) is mounted on and movable relative to the wafer carrier (212). A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar. © KIPO & WIPO 2007 ...

SPINDLE ASSEMBLY FOR FORCE CONTROLLED POLISHING

A spindle assembly (10) for force controlled operation in applications such as the chemical mechanical planarization of semiconductor wafers includes an axially and rotatably moveable spindle (14) driven by a force producing device (14). The force producing device (14) is controlled by a position feedback loop (18) in a first mode of operation and a spindle force control feedback loop (22) in a second mode of operation so that the same force producing device (14) controls spindle movement in the first mode of operation and maintains a constant pressure on a workpiece based on the detected applied pressure in the second mode of operation. © KIPO & WIPO 2007 ...

APPARATUS AND METHODS WITH RESOLUTION ENHANCEMENT FEATURE FOR IMPROVING ACCURACY OF CONVERSION OF REQUIRED CHEMICAL MECHANICAL POLISHING PRESSURE TO FORCE TO BE APPLIED BY POLISHING HEAD TO WAFER

CMP systems and methods in which a polishing pad is moved relative to a wafer and a retainer ring implement instructions for applying required pressure to the wafer for CMP operations. Accuracy of computations of the pressures, and of conversion of the pressure to force, is improved without use of high resolution components, such as high resolution digital devices. Such improved accuracy is achieved using both digital and analog operations, and by converting values of required pressure or force from one set of units to a second set of units and then back to the first set of units. A quantization process is performed using data processed by average resolution digital devices. The process transfers both pressure/force scale and pressure/force set point data between separate processors to obtain computed values of pressure and force having acceptable accuracy, such that quantization errors are eliminated or significantly reduced. © KIPO & WIPO 2007 ...

Apparatus and methods for enhanced fluid delivery on bevel etch applications

An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber is disclosed. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve. Wherein the crossover valve, edge enable valve, and center enable valve allow one of tuning fluid or process fluids to flow to one of the edge fluid supply or the center fluid supply.

Platen with diaphragm and method for optimizing wafer polishing

A platen is provided for use in a chemical mechanical planarization (CMP) system. The platen is provided with diaphragms that overcome a fluid-conservation problem experienced in prior air-bearing platens. The diaphragms enable a removal profile to be manipulated by configuring one or more diaphragms to control localized polishing pressure while capturing free-flowing fluid that is input to the apparatus. The diaphragms also minimize loss of normally-free-flowing fluid from a fluid-bearing.

Polishing apparatus and methods for controlling polishing pressure as function of overlap area between polishing head and semiconductor substrate

Subaperture chemical mechanical polishing system

A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.

Adjustable force applying air platen and spindle system, and methods for using the same

An adjustable platen is provided. The adjustable platen includes a platen body having a top region and a bottom region. The platen body is oriented under a linear polishing pad of a CMP system. An air bearing is integrated with the platen body at the top region, and the air bearing is configured to apply an air pressure to an underside of the linear polishing pad. A set of bearings are connected to the bottom region of the platen body to enable controlled vertical movement of the top region of the platen body closer or further from the underside of the linear polishing pad depending on the applied air pressure. The applied air pressure is configured to exert a controllable force to the underside of the linear polishing pad. The force is controlled to meet a desired process parameters, while the carrier simply moves the wafer into position over the linear polishing pad.

Active retaining ring support

A chemical mechanical planarization (CMP) system having a polishing pad, a carrier body for holding a wafer, a retaining ring, and an active retaining ring support is provided. The active retaining ring is defined by a circular ring having a thickness and a width. The circular ring is defined by an elastomeric material. The circular ring is configured to be placed between the retaining ring and the carrier body. The circular ring has a plurality of voids therein, and the plurality of voids are defined in locations around the circular ring. The circular ring has a compressibility level that is set by the elastomeric material and the plurality of voids.

Methods and apparatus for optimal temperature control in a plasma processing system

A temperature control device for controlling temperature of an upper chamber of a plasma processing apparatus is described. The temperature control device includes a thermally conductive body having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers in thermal communication with the thermally conductive body wherein at least one layer is a heating element; and a cooling element connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber of the plasma processing apparatus; a temperature control unit for controlling the heating element and the ...

Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head

CMP systems and methods implement instructions for moving a polishing pad relative to a wafer and a retainer ring and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer, a pad conditioning puck, and the retainer ring are separately urged into contact with the polishing pad so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor by a force controller, and the central processor manages data transfer to the force controller.

EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS

An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring. 1. A component of an edge ring assembly used in a plasma etching chamber wherein a dielectric coupling ring is adapted to surround a substrate support in the plasma etching chamber and a conductive edge ring is adapted to surround and be supported on the dielectric coupling ring such that a substrate supported on the substrate support overhangs a portion of the conductive edge ring , the component comprising:the dielectric coupling ring having an inner cylindrical surface with a diameter of 11.6 to 11.7 inches and a height of 0.39 to 0.40 inch, an outer cylindrical surface with a diameter of 13.2 to 13.3 inches, a height of 0.39 to 0.40 inch and concentric with the inner cylindrical surface, a lower surface perpendicular to a center axis of the outer cylindrical surface and extending from a lower periphery of the outer cylindrical surface to a lower periphery of the inner cylindrical surface, an upper surface perpendicular to the center axis of the outer cylindrical surface and extending from an ...

Methods for Enhanced Fluid Delivery on Bevel Etch Applications

An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve. 1. A method for controlling application of a tuning fluid and a process fluid to a process chamber , comprising:(a) enabling flow of the tuning fluid to a center supply through a first supply network, the first supply network coupled to a cross-flow network that includes a closed crossflow valve;(b) enabling flow of the process fluid to an edge supply through a second supply network, the second supply network coupled to the cross-flow network, the process fluid flowing to the edge supply;(c) disabling flow of the process fluid through the cross-flow network;(d) activating a purge of an edge supply line that connects to the edge supply;(e) activating a purge of the second supply network up to a connection with the cross-flow network; and(f) enabling a flow of a new process fluid to the edge supply.2. The method of claim 1 , further comprising claim 1 ,activating a pump that is coupled to the process chamber before enabling the flow of the new process fluid to the edge supply.3. The method of claim 1 , further comprising claim 1 ,enabling flow of one of the ...

DASHBOARD ASSEMBLY FOR PLASMA ENGRAVING CHAMBERS

Un anneau de bord d'une chambre de gravure (100) au plasma comporte un anneau de couplage diélectrique et un anneau de bord conducteur. L'anneau diélectrique a une protubérance annulaire partant de sa périphérie intérieure et entoure un support de substrat (150). L'anneau conducteur entoure la protubérance de l'anneau diélectrique. Un substrat placé sur le support (150) le surplombe et est superposé à la protubérance de l'anneau diélectrique et à l'anneau conducteur. L'anneau diélectrique peut avoir une section rectangulaire. Les anneaux diélectrique et conducteur entourent un support. Un substrat placé sur le support (150) le surplombe et est superposé à une partie de l'anneau conducteur. An edge ring of a plasma etching chamber (100) has a dielectric coupling ring and a conductive edge ring. The dielectric ring has an annular protrusion extending from its inner periphery and surrounds a substrate support (150). The conductive ring surrounds the protuberance of the dielectric ring. A substrate placed on the support (150) overhangs it and is superimposed on the protuberance of the dielectric ring and the conductive ring. The dielectric ring can have a rectangular section. The dielectric and conductive rings surround a support. A substrate placed on the support (150) overhangs it and is superimposed on a portion of the conductive ring.

Sacrificial component e.g. edge ring component for plasma chamber, has annular surfaces which are extended from upper and lower peripheries, and cylindrical surface that is extended from inner periphery of annular surfaces

An outer cylindrical surface has lower and upper surfaces which are vertical to center axis line of outer side cylindrical surface and are extended from lower and upper peripheries of outer surface. An electrically conductive edge ring (280) has lower and upper surfaces which are vertical to center axis line, and are extended from lower and upper periphery. The annular surfaces are vertical to center axis line, and are extended from upper and lower peripheries. The cylindrical surface is extended from inner periphery of annular surfaces to outer peripheral edge.

Oscillating fixed abrasive cmp system and methods for implementing the same

Apparatus and methods for aligning a surface of an active retainer ring with a wafer surface for chemical mechanical polishing

A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (212) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220) . A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis. The retainer ring (226) is mounted on and movable relative to the wafer carrier (212) . A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar.

Polishing apparatus and methods controlling the polishing pressure as a function of the overlapping area between the polishing head and the semiconductor substrate

CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller.

Polishing apparatus and methods controlling the polishing pressure as a function of the overlapping area between the polishing head and the semiconductor substrate

CMP systems and methods implement instructions for moving a polishing pad (202) relative to a wafer (206) and a retainer ring (282) and for applying pressure for CMP operations. Feedback of polishing pad position is coordinated with determinations of desired inputs of variable forces by which changing areas of the wafer (206), a pad conditioning puck (220), and the retainer ring (282) are separately urged into contact with the polishing pad (202) so that the pressure on each such area is separately controlled. Processing workload is evaluated according to criteria related to the characteristics of the instructions. If none of the criteria is exceeded, a central CMP processor (2106) is used for the processing. If any of the criteria is exceeded, the force determinations are made separately from the central CMP processor (2106) by a force controller (2302), and the central processor (2106) manages data transfer to the force controller.

Methods and apparatus for optimal temperature control in a plasma processing system

A temperature control device (308) for controlling temperature of an upper chamber (312) of a plasma processing apparatus (300) is described. The temperature control device includes a thermally conductive body (334) having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers (344, 348, 350, 352) in thermal communication with the thermally conductive body wherein at least one layer is a heating element (350); and a cooling element (326) connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber, a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.

A chemical mechanical planarization system with an adjustable force applying air platen

An adjustable platen is provided. The adjustable platen (122) includes a platen body having a top region and a bottom region. The platen body is oriented under a linear polishing pad (18) of a CMP system (100). An air bearing is integrated with the platen body at the top region, and the air bearing (124) is configured to apply an air pressure to an underside of the linear polishing pad. A set of bearings (132) are connected to the bottom region of the platen body to enable controlled vertical movement of the top region of the platen body closer or further from the underside of the linear polishing pad depending on the applied air pressure. The applied air pressure is configured to exert a controllable force to the underside of the linear polishing pad. The force is controlled to meet a desired process parameters, while the carrier (102) simply moves the wafer (12) into position over the linear polishing pad.

Apparatus and methods with resolution enhancement feature for improving accuracy of conversion of required chemical mechanical polishing pressure to force to be applied by polishing head to wafer

Vorrichtung und verfahren mit einer auflösungsverbesserten charakteristik zur erhöhten genauigkeit bei der umwandlung des benötigten chemischen mechanischen polierdrucks in kraft, welche bei einem polierkopf auf einem wafer angewendet wird

Apparatus and methods with resolution enhancement feature for improving accuracy of conversion of required chemical mechanical polishing pressure to force to be applied by polishing head to wafer

Apparatus and methods with resolution enhancement feature for improving accuracy of conversion of required chemical mechanical polishing pressure to force to be applied by polishing head to wafer

CMP systems and methods in which a polishing pad is moved relative to a wafer and a retainer ring implement instructions for applying required pressure to the wafer for CMP operations. Accuracy of computations of the pressures, and of conversion of the pressure to force, is improved without use of high resolution components, such as high resolution digital devices. Such improved accuracy is achieved using both digital and analog operations, and by converting values of required pressure or force from one set of units to a second set of units and then back to the first set of units. A quantization process is performed using data processed by average resolution digital devices. The process transfers both pressure/force scale and pressure/force set point data between separate processors to obtain computed values of pressure and force having acceptable accuracy, such that quantization errors are eliminated or significantly reduced.

Spindle assembly for force controlled polishing

A spindle assembly (10) for force controlled operation in applications such as the chemical mechanical planarization of semiconductor wafers includes an axially and rotatably moveable spindle (14) driven by a force producing device (14). The force producing device (14) is controlled by a position feedback loop (18) in a first mode of operation and a spindle force control feedback loop (22) in a second mode of operation so that the same force producing device (14) controls spindle movement in the first mode of operation and maintains a constant pressure on a workpiece based on the detected applied pressure in the second mode of operation.

Spindle assembly for force controlled polishing

Vorrichtung und Verfahren zur Ausrichtung der Fläche eines aktiven Halterrings mit der Fläche einer Halbleiterscheibe während dem chemisch-mechanischen Polieren

Apparatus and methods for aligning a surface of an active retainer ring with a wafer surface during chemical mechanical polishing

A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (212) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220) . A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis. The retainer ring (226) is mounted on and movable relative to the wafer carrier (212) . A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar.

Vorrichtung und Verfahren zur Ausrichtung der Fläche eines aktiven Halterrings mit der Fläche einer Halbleiterscheibe während dem chemisch-mechanischen Polieren

Apparatus and methods for aligning a surface of an active retainer ring with a wafer surface during chemical-mechanical polishing

A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (212) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220) . A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis. The retainer ring (226) is mounted on and movable relative to the wafer carrier (212) . A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar.